CN113795884A - 自旋轨道扭矩器件中的切换轨迹的控制 - Google Patents

自旋轨道扭矩器件中的切换轨迹的控制 Download PDF

Info

Publication number
CN113795884A
CN113795884A CN202080034465.2A CN202080034465A CN113795884A CN 113795884 A CN113795884 A CN 113795884A CN 202080034465 A CN202080034465 A CN 202080034465A CN 113795884 A CN113795884 A CN 113795884A
Authority
CN
China
Prior art keywords
layer
magnetic
sot
mtj
magnetization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080034465.2A
Other languages
English (en)
Chinese (zh)
Inventor
T·蓬
C·加格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN113795884A publication Critical patent/CN113795884A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/18—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using galvano-magnetic devices, e.g. Hall-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
CN202080034465.2A 2019-06-20 2020-06-05 自旋轨道扭矩器件中的切换轨迹的控制 Pending CN113795884A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/447,753 2019-06-20
US16/447,753 US10916282B2 (en) 2019-06-20 2019-06-20 Control of switching trajectory in spin orbit torque devices by micromagnetic configuration
PCT/IB2020/055307 WO2020254905A1 (en) 2019-06-20 2020-06-05 Control of switching trajectory in spin orbit torque devices

Publications (1)

Publication Number Publication Date
CN113795884A true CN113795884A (zh) 2021-12-14

Family

ID=74037843

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080034465.2A Pending CN113795884A (zh) 2019-06-20 2020-06-05 自旋轨道扭矩器件中的切换轨迹的控制

Country Status (6)

Country Link
US (1) US10916282B2 (enExample)
JP (1) JP7563851B2 (enExample)
CN (1) CN113795884A (enExample)
DE (1) DE112020002929T5 (enExample)
GB (1) GB2598699B (enExample)
WO (1) WO2020254905A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11557719B2 (en) * 2018-02-06 2023-01-17 Tohoku University Magnetoresistance effect element, circuit device, and circuit unit
EP3839955B1 (en) * 2019-12-18 2025-03-26 Imec VZW Dual stack sot
CN113451356B (zh) * 2021-02-10 2022-12-20 北京航空航天大学 磁性随机存储单元、存储器及设备
CN113611793B (zh) * 2021-08-03 2023-10-03 致真存储(北京)科技有限公司 一种磁性随机存储器
EP4177892B1 (en) * 2021-11-03 2024-09-11 Imec VZW A magnetic domain-wall based memory device with a track-crossing architecture

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150129995A1 (en) * 2013-10-30 2015-05-14 The Regents Of The University Of California Magnetic memory bits with perpendicular magnetization switched by current-induced spin-orbit torques
US20180061467A1 (en) * 2016-08-25 2018-03-01 Qualcomm Incorporated High speed, low power spin-orbit torque (sot) assisted spin-transfer torque magnetic random access memory (stt-mram) bit cell array
US20190088860A1 (en) * 2017-09-15 2019-03-21 Kabushiki Kaisha Toshiba Magnetic memory

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8295082B2 (en) * 2008-08-15 2012-10-23 Qualcomm Incorporated Gate level reconfigurable magnetic logic
FR3031622B1 (fr) * 2015-01-14 2018-02-16 Centre National De La Recherche Scientifique Point memoire magnetique
US11257862B2 (en) * 2015-01-30 2022-02-22 Yimin Guo MRAM having spin hall effect writing and method of making the same
US9589619B2 (en) 2015-02-09 2017-03-07 Qualcomm Incorporated Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy
KR101729383B1 (ko) 2015-03-18 2017-04-25 한양대학교 산학협력단 스핀-오비트 토크를 이용한 자성소자
FR3042634B1 (fr) * 2015-10-16 2017-12-15 Centre Nat Rech Scient Point memoire magnetique
US9768229B2 (en) * 2015-10-22 2017-09-19 Western Digital Technologies, Inc. Bottom pinned SOT-MRAM bit structure and method of fabrication
US9830966B2 (en) 2015-10-29 2017-11-28 Western Digital Technologies, Inc. Three terminal SOT memory cell with anomalous Hall effect
US10333058B2 (en) * 2016-03-17 2019-06-25 Cornell University Nanosecond-timescale low-error switching of 3-terminal magnetic tunnel junction circuits through dynamic in-plane-field assisted spin-hall effect
JP6374452B2 (ja) * 2016-08-04 2018-08-15 株式会社東芝 磁気メモリ
KR101825318B1 (ko) 2017-01-03 2018-02-05 고려대학교 산학협력단 스핀필터 구조체를 포함하는 자기 터널 접합 소자
JP2019046976A (ja) * 2017-09-01 2019-03-22 Tdk株式会社 スピン流磁化反転素子、磁気メモリ
CN107732005B (zh) * 2017-10-11 2020-08-18 华中科技大学 一种自旋多数门器件及逻辑电路
US10276784B1 (en) 2017-10-30 2019-04-30 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and associated operating and fabricating method
CN109166962B (zh) * 2018-08-09 2020-10-20 北京航空航天大学 一种互补型磁性存储单元
US11594575B2 (en) * 2018-08-31 2023-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic tunnel junction structures and related methods
KR102572158B1 (ko) * 2018-09-12 2023-08-30 삼성전자주식회사 자기 기억 소자
US11165012B2 (en) * 2018-10-29 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic device and magnetic random access memory
US11605670B2 (en) * 2018-10-30 2023-03-14 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic tunnel junction structures and related methods
US11917925B2 (en) * 2020-01-23 2024-02-27 Everspin Technologies, Inc. Magnetoresistive devices and methods therefor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150129995A1 (en) * 2013-10-30 2015-05-14 The Regents Of The University Of California Magnetic memory bits with perpendicular magnetization switched by current-induced spin-orbit torques
US20180061467A1 (en) * 2016-08-25 2018-03-01 Qualcomm Incorporated High speed, low power spin-orbit torque (sot) assisted spin-transfer torque magnetic random access memory (stt-mram) bit cell array
US20190088860A1 (en) * 2017-09-15 2019-03-21 Kabushiki Kaisha Toshiba Magnetic memory

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JIE ZHANG 等: "Role of Micromagnetic States on Spin-Orbit Torque-Switching Schemes", NANO LETTER, vol. 18, no. 7, 31 July 2018 (2018-07-31), pages 4074 - 4079 *

Also Published As

Publication number Publication date
JP7563851B2 (ja) 2024-10-08
JP2022537980A (ja) 2022-08-31
US20200402558A1 (en) 2020-12-24
GB2598699A (en) 2022-03-09
DE112020002929T5 (de) 2022-03-03
GB2598699B (en) 2022-07-06
GB202200048D0 (en) 2022-02-16
WO2020254905A1 (en) 2020-12-24
US10916282B2 (en) 2021-02-09

Similar Documents

Publication Publication Date Title
US10879452B2 (en) Magnetic tunnel junction device and magnetic memory device
JP7563851B2 (ja) スピン軌道トルク・デバイスにおけるスイッチング軌道の制御方法、デバイス
Lee et al. Emerging three-terminal magnetic memory devices
Kawahara et al. Spin-transfer torque RAM technology: Review and prospect
KR102080631B1 (ko) 자기 저항 효과 소자 및 자기 메모리 장치
Wang et al. Electric-field control of spin-orbit interaction for low-power spintronics
Ikeda et al. Magnetic tunnel junctions for spintronic memories and beyond
CN101896976B (zh) 基于电流感应自旋动量转移的高速低功率磁性装置
US9379712B2 (en) High speed precessionally switched magnetic logic
US8482968B2 (en) Non-volatile magnetic tunnel junction transistor
KR101559216B1 (ko) 바이폴라 스핀-전달 스위칭
US8198919B1 (en) Spin transfer torque triad for non-volatile logic gates
CN110061127A (zh) 磁隧道结的形成方法及磁阻式随机存储器
Shirotori et al. Voltage-control spintronics memory with a self-aligned heavy-metal electrode
Kang et al. Critical switching current density of magnetic tunnel junction with shape perpendicular magnetic anisotropy through the combination of spin-transfer and spin-orbit torques
US7969762B2 (en) Spintronic device with control by domain wall displacement induced by a current of spin-polarized carriers
US9431599B2 (en) Non-volatile logic device
CN112563411B (zh) 一种磁性隧道结及其制造方法、存储单元
Qi et al. Antiferromagnetic spintronics in magnetic memory devices
KR101906708B1 (ko) 비대칭 자기 소자
CN113380287A (zh) 磁性存储单元结构及其数据写入方法
Lyle et al. Spin transfer torque programming dipole coupled nanomagnet arrays
Zhang et al. Role of Micromagnetic States on Spin–Orbit Torque-Switching Schemes
Baek et al. Novel operation of a multi-bit SOT memory cell addressed with a single write line
Dieny et al. Spintronic devices for memory and logic applications

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20211214

WD01 Invention patent application deemed withdrawn after publication