CN113794460B - Nanometer phonon crystal and preparation method thereof - Google Patents
Nanometer phonon crystal and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
The present disclosure provides a nano-phonon crystal and a method of preparing the same, the nano-phonon crystal comprising: a substrate; a first insulating layer formed on the substrate; a second insulating layer formed on the first insulating layer, grooves formed on the first insulating layer and the second insulating layer, and a plurality of support columns formed of the first insulating layer and the second insulating layer extending from the bottoms of the grooves; a gate electrode formed at the bottom of the recess; a source/drain electrode formed on the second insulating layer; and a vibration layer covering at least a portion of the source-drain electrode and the support column. According to the method, the vibrating layer is covered on at least one part of the source electrode, the drain electrode and the support columns which are arranged in the grooves in an array mode, and the non-contact electric field is formed by applying voltage on the grid electrode to stretch the suspended vibrating layer, so that the beneficial effects of flexibly regulating and controlling energy bands on the same nano phonon crystal and facilitating integration of devices are achieved.
Description
Technical Field
The disclosure relates to the field of acoustic wave device preparation, in particular to a nano phonon crystal and a preparation method thereof.
Background
The acoustic device is a device for regulating and controlling the sound wave, and compared with the electromagnetic wave device, the volume of the acoustic device is smaller under the same frequency. Therefore, in the trend of high density integration of integrated circuits, acoustic wave devices have greater advantages. The working frequency of the acoustic device can reach 10 under the micro-nano scale 9 Hz, its frequency is high and transmission loss is small. Based on this, micro-nano acoustic devices such as surface acoustic wave devices, phonon crystals, and the like have wide applications.
Phononic crystals are an acoustic device with a periodic structure. When the sound wave passes through the phonon crystal, the sound wave is subjected to the action of a periodic structure, and the dispersion relation shows an energy band structure. The transmission of sound waves in the passband frequency range in the energy band is not suppressed, while sound waves in the bandgap frequency range are suppressed. Therefore, the sound wave can be regulated and controlled by utilizing the characteristic of the phonon crystal, so that the phonon crystal has great application potential in the directions of vibration reduction, noise reduction and the like. In particular, it can be used to prepare acoustic bandpass/bandstop filters of specific frequencies.
In the existing nano phonon crystal, the formation of energy bands depends on a geometric structure, and if the required passband/band gap frequency requirement range is to be changed, a preparation device is required to be redesigned, so that the regulation and control of the energy bands are not facilitated; in addition, the existing nano phonon crystal has larger volume and mass, lower theoretical resonance frequency and higher loss.
Disclosure of Invention
Accordingly, the present disclosure provides a nano phonon crystal and a preparation method thereof, so as to at least partially solve one of the above-mentioned technical problems.
One aspect of the present disclosure provides a nano-phononic crystal comprising:
a substrate;
a first insulating layer formed on the substrate;
a second insulating layer formed on the first insulating layer, grooves being formed on the first insulating layer and the second insulating layer, a plurality of support columns extending from the bottoms of the grooves and formed of the first insulating layer and the second insulating layer being provided in the grooves;
a gate electrode formed at the bottom of the recess;
a source/drain electrode formed on the second insulating layer; and
and a vibration layer covering at least a part of the source/drain electrodes and the support columns, the vibration layer being adapted to generate resonance vibration.
According to an embodiment of the present disclosure, the first insulating layer is made of silicon oxide, and the second insulating layer is made of silicon nitride;
the support columns are periodically arranged; and
preferably, the diameter of the portion of the support post made of the first insulating layer is smaller than the diameter of the portion made of the second insulating layer.
According to an embodiment of the present disclosure, the thickness of the substrate is 500 μm to 800 μm;
the thickness of the first insulating layer is 1000 nm-2000 nm;
the thickness of the second insulating layer is 10 nm-200 nm;
wherein, the material for manufacturing the substrate comprises an insulating material; and
wherein the insulating material comprises at least one of silicon, silicon dioxide and aluminum oxide.
According to an embodiment of the present disclosure, the vibration layer is made of a two-dimensional nanomaterial and includes a single-layer structure or a multi-layer stack structure; and
the material for manufacturing the vibration layer comprises at least one of graphene, molybdenum disulfide and boron nitride.
According to an embodiment of the present disclosure, a material for manufacturing any one of the gate electrode and the source/drain electrode includes one of titanium, palladium, and gold; preferably, the method comprises the steps of,
the thickness of the titanium is 3 nm-5 nm;
the thickness of the gold is 20 nm-40 nm; and
the thickness of the palladium is 20nm to 40nm.
According to an embodiment of the present disclosure, the nano phononic crystal further includes an overlay exposure mark; the overlay exposure mark is formed on the exposed area of the second insulating layer.
According to an embodiment of the disclosure, a first metal layer is further disposed on the support column; and
and a second metal layer is arranged at the upper edge of the opening of the groove, and the vibration layer is in smooth contact with the source-drain electrode through the second metal layer.
Another aspect of the present disclosure provides a method for preparing a nano phononic crystal, comprising:
sequentially forming a first insulating layer and a second insulating layer on a substrate;
forming an overlay exposure mark on the second insulating layer by adopting a patterning process;
forming grooves and periodically arranged support columns in the grooves in the second insulating layer and the first insulating layer by adopting a patterning process;
forming a gate electrode on the first insulating layer at the bottom of the groove, and forming a source-drain electrode on the second insulating layer; and
and a vibration layer is covered on at least one part of the support column and the source-drain electrode.
According to an embodiment of the disclosure, the covering the support column and the source-drain electrode with the vibration layer includes:
and a step of covering at least a part of the support column and the source/drain electrode with a single layer of the vibration layer or a step of covering at least a part of the support column and the source/drain electrode with a plurality of layers of the vibration layer.
According to an embodiment of the present disclosure, the step of covering the support column and at least a portion of the source/drain electrode with a single layer of the vibration layer includes:
adhering an adhesive layer on the glass slide;
attaching a single-layer vibration layer to the adhesive layer to form a glass slide with the single-layer vibration layer; and
and bonding one surface of the slide glass with the single-layer vibration layer to at least one part of the support column and the source/drain electrode to form the single-layer vibration layer.
According to the nano-phonon crystal of the embodiment of the disclosure, at least one part of the source and drain electrodes and the support columns in the grooves are covered with a vibrating layer suitable for generating resonance vibration, an electric field is formed by applying a voltage on the grid electrode, and the suspended vibrating layer is stretched by utilizing electrostatic force generated by the electric field, so that the vibrating layer is deformed and internal stress is changed, and the energy band of the nano-phonon crystal is changed, and therefore, the position of a band gap is modulated according to requirements in a non-contact mode.
Drawings
The above and other objects, features and advantages of the present disclosure will become more apparent from the following description of embodiments thereof with reference to the accompanying drawings in which:
FIG. 1 schematically illustrates a cross-sectional schematic view of a nano-phononic crystal according to an embodiment of the present disclosure;
FIG. 2 schematically illustrates a top view schematic of a nano-phononic crystal according to an embodiment of the present disclosure;
FIG. 3 schematically illustrates a flow chart of a method of preparing nano-phononic crystals according to an embodiment of the present disclosure;
FIGS. 4A-4I schematically illustrate schematic diagrams of a process for preparing support pillars and electrodes of nano-phononic crystals according to one embodiment of the present disclosure;
FIGS. 5A-5D schematically illustrate a process diagram for transferring a vibrating layer of nano-phonon crystals onto support columns and electrodes prepared using the process illustrated in FIGS. 4A-4I, according to an embodiment of the present disclosure;
FIG. 6 schematically illustrates a schematic diagram of a nano-phononic crystal according to an embodiment of the present disclosure; and
fig. 7 schematically shows a relationship between a voltage applied to the gate electrode and a resonance frequency of the vibration layer in the nano-phonon crystal of fig. 6.
In the drawings, the reference numerals specifically have the following meanings:
101. a substrate; 102. a first insulating layer; 103. a second insulating layer; 104. a support column; 105. a groove; 201. a first metal layer; 202. a gate electrode; 203. a second metal layer; 204. a source-drain electrode; 301. overlay exposure marks; 401. a vibration layer; 501. an adhesive tape; 502. an adhesive layer; 503. a glass slide; 601. a first photoresist; 602. and a second photoresist.
Detailed Description
The present disclosure is described in further detail below with reference to the drawings and examples. It will be appreciated that the specific embodiments described herein are merely illustrative of the disclosure and are not limiting of the disclosure, as various features described in the embodiments may be combined to form multiple alternatives. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present disclosure are shown in the drawings.
According to the present general inventive concept, there is provided a nano phononic crystal comprising: a substrate; a first insulating layer formed on the substrate; a second insulating layer formed on the first insulating layer, grooves formed on the first insulating layer and the second insulating layer, and a plurality of support columns formed of the first insulating layer and the second insulating layer extending from the bottoms of the grooves; a gate electrode formed at the bottom of the recess; a source/drain electrode formed on the second insulating layer; and a vibration layer overlying at least a portion of the source-drain electrode and the support post, the vibration layer adapted to produce resonant vibrations.
FIG. 1 schematically illustrates a cross-sectional schematic view of a nano-phononic crystal according to an embodiment of the present disclosure; fig. 2 schematically illustrates a top view schematic of a nano-phononic crystal according to an embodiment of the present disclosure.
Referring to fig. 1 and 2, according to an embodiment of one aspect of the present disclosure, there is provided a nano-phononic crystal comprising: a substrate 101, a first insulating layer 102 formed over the substrate 101, a second insulating layer 103 formed over the first insulating layer 102, a gate electrode 202, source and drain electrodes (source and drain electrodes) 204, and a vibration layer 401. Grooves 105 are formed on the first insulating layer 102 and the second insulating layer 103, and a plurality of support pillars 104 formed of the first insulating layer 102 and the second insulating layer 103 extending from the bottoms of the grooves 105 are provided in the grooves 105. A gate electrode 202 is formed at the bottom of the recess 105 except for the support column 104, and a source-drain electrode 204 is formed on the second insulating layer 103. A vibration layer 401 is coated on at least a portion of the source-drain electrode 204 and the support column 104, the vibration layer 401 being adapted to generate resonance vibration in accordance with a voltage applied to the gate electrode 202.
A nano-phononic crystal according to an embodiment of the present disclosure, a vibration layer 401 adapted to generate resonant vibrations is covered on at least a portion of the source-drain electrode 204 and the support pillars 104 within the grooves 105. Forming an electric field by applying a voltage to the gate electrode 202, stretching the suspended vibration layer 401 by using an electrostatic force generated by the electric field applied to the gate electrode, deforming the vibration layer and changing an internal stress, thereby changing an energy band of the nano-phonon crystal; further, by applying a frequency modulated microwave voltage signal to the source electrode, a mixing current is measured on the drain electrode, thereby obtaining a change in the energy band of the nano-phonon crystal. Therefore, the position of the band gap can be modulated according to the requirement by a non-contact method, the energy band can be flexibly regulated and controlled on the same nano phonon crystal, the volume and the quality of the nano phonon crystal are reduced, and the integration of the nano phonon crystal is facilitated.
According to an embodiment of the present disclosure, the first insulating layer 102 is made of silicon oxide, and the second insulating layer 103 is made of silicon nitride; the support columns 104 are arranged periodically in the grooves 105, for example, a plurality of support columns 104 are arranged in an array.
In one embodiment, the diameter of the portion of the support post 104 made of the first insulating layer 102 is smaller than the diameter of the portion made of the second insulating layer 103.
The cross-sectional shape of the groove 105 and the support post 104 may be one of circular, elliptical, polygonal, according to embodiments of the present disclosure. For example, the cross-sectional shape of the support column 104 is substantially circular, and the cross-sectional shape of the groove 105 is substantially square. The depth of the grooves 105 and the height of the support posts are about 100nm.
According to embodiments of the present disclosure, the support column 104 can be used to support the vibration layer 401. The diameter of the portion of the support column 104 made of the first insulating layer 102 is smaller than the diameter of the portion made of the second insulating layer 103, so that the support column 104 is formed with an outer contour of an undercut structure in a side view. In one exemplary embodiment, the silicon nitride portions of the support posts 104 are approximately 500nm in diameter, the silicon oxide portions are smaller in diameter than the silicon nitride portions, and the spacing between the support posts is approximately 1 μm. By adopting the support column with the undercut structure, the area of the bottom of the groove 105 can be increased, and then the area of the gate electrode 202 arranged at the bottom of the groove 105 can be increased, and the electrical property of the gate electrode can be improved.
According to an embodiment of the present disclosure, the thickness of the substrate 101 is 500 μm to 800 μm; the thickness of the first insulating layer 102 is 100nm to 2000nm; the thickness of the second insulating layer 103 is 10nm to 200nm. The material from which the substrate 101 is made includes an insulating material; the insulating material comprises at least one of silicon, silicon dioxide, and aluminum oxide.
According to embodiments of the present disclosure, the substrate may be made of at least one of silicon, silicon dioxide, and aluminum oxide. For example, the substrate may be fabricated from n-doped silicon, p-doped silicon, or intrinsic silicon, and the substrate may be formed as an 8 inch or 4 inch diameter wafer, with a thickness of 500 μm to 800 μm, such as 670 μm; the thickness of the first insulating layer 102 is 100nm to 2000nm, for example, 1000nm; the thickness of the second insulating layer 103 is 10nm to 200nm, for example, 50nm.
According to an embodiment of the present disclosure, the vibration layer 401 is made of a two-dimensional nanomaterial and includes a single-layer structure or a multi-layer stack structure. The material of which the vibration layer 401 is made includes at least one of graphene, molybdenum disulfide, and boron nitride. The material for manufacturing the vibration layer 401 may be graphene, or may be a stacked layer formed by graphene and molybdenum disulfide or boron nitride.
As a two-dimensional nanomaterial, graphene has excellent electrical and mechanical properties. The nano mechanical vibrator prepared by the two-dimensional nano material has light weight, small volume and high vibration frequency, and has wide application in many aspects such as wireless communication, quality detection and the like. And selecting a proper periodic structural design to construct a nano mechanical vibrator array based on the two-dimensional nano material, so that nano phonon crystals based on the two-dimensional nano material can be formed. The two-dimensional nano material has high strength, is not easy to break under the regulation and control of external forces such as mechanical force, electrostatic force, magnetostriction and the like, can change along with the change of the external force in mechanical property, and can regulate and control the energy band frequency position of the nano phonon crystal in a non-contact way by utilizing an external electric field force and the like.
The nano phonon crystal based on the two-dimensional nano material is small in size and light in weight; the theoretical expected resonant frequency can reach MHz or even GHz level, and the loss is small; the energy band position of the device is conveniently regulated and controlled by external force.
Further, according to the nano phonon crystal based on the two-dimensional nano material in the embodiment of the disclosure, the etching process is not utilized to etch the vibration layer 401, so that the vibration layer 401 is guaranteed to be of a film structure with a complete surface, the possibility of cracking the vibration layer 401 in the preparation process is effectively reduced, and the possibility of introducing pollution and generating defects on the surface of the vibration layer 401 due to etching of the vibration layer 401 is avoided. Because the vibration layer 401 of the nano-phonon crystal according to the embodiment of the present disclosure is a complete film structure without wrinkles, the possibility of failure of the vibration layer 401 due to inconsistent pore size and pore spacing of the periodic pores when the periodic pores are processed on the vibration layer of the existing nano-phonon crystal is avoided.
According to an embodiment of the present disclosure, the material of which either the gate electrode 202 or the source-drain electrode 204 (source electrode and drain electrode) is made includes one of titanium, palladium, gold. Further, the thickness of titanium is 3 nm-5 nm; the thickness of the gold is 20 nm-40 nm; the thickness of palladium is 20 nm-40 nm.
According to an embodiment of the present disclosure, the support column 104 is further provided with a first metal layer 201 thereon; a second metal layer 203 is further provided on the upper edge of the opening of the square recess 105, and the vibration layer 401 is in smooth contact with the source-drain electrode 204 through the second metal layer 203.
In an exemplary embodiment, a strip-shaped second metal layer 203 is formed on the second insulating layer 103 on opposite sides of the upper edge of the recess 105, and two source/drain electrodes 204 are formed on the second insulating layer 103, where the two source/drain electrodes 204 are respectively composed of a strip-shaped metal layer and a circular metal layer, and are connected to the second metal layer 203.
According to embodiments of the present disclosure, the electrode (either of the gate electrode and the source-drain electrode) may be a stacked two-layer metal. For example, the material from which the electrodes are made may be a two-layer metal of Ti and Au, or a two-layer metal of Ti and Pd. In one exemplary embodiment, the electrode comprises two layers of metal, 3nm to 5nm titanium and 20nm to 40nm gold.
According to the embodiment of the disclosure, since most metals have relatively low binding force on the silicon wafer and are easy to fall off, a Ti metal layer is adopted as an adhesion layer between Au and the silicon wafer.
According to the embodiment of the disclosure, an electric field is formed by applying a voltage to the gate electrode 202 at the bottom of the groove 105, and under the condition that the gate electrode 202 is not in contact with the vibration layer 401, the vibration layer 401 is stretched by the action of electrostatic force, so that the vibration layer is deformed and the internal stress of the vibration layer is changed, and the energy band change of the nano phonon crystal is regulated as required.
According to the embodiment of the present disclosure, providing the metal layer of the same material as the electrode at the upper edge of the opening of the groove 105 enables the vibration layer 401 to be in smooth contact with the source-drain electrode 204.
According to an embodiment of the present disclosure, referring to fig. 2, the nano-phononic crystal further comprises an overlay exposure mark 301; the overlay exposure mark 301 is formed on the exposed region of the second insulating layer 103. In an exemplary embodiment, four overlay exposure marks 301 each having a cross shape are formed on the second insulating layer 103 and are respectively disposed at four vertex angles adjacent to the upper edge of the square groove 105. The vibration layer 401 covers the first metal layer 201, the second metal layer 203 and a partial region of the source-drain electrode 204 on the support column 104 in the recess 105 at the same time.
According to the embodiment of the disclosure, the alignment accuracy during the alignment exposure can be effectively improved by the alignment exposure mark 301 formed on the exposed area of the second insulating layer 103, so that the accuracy of the prepared nano phonon crystal structure is improved.
Fig. 3 schematically illustrates a flow chart of a method of preparing nano-phononic crystals according to an embodiment of the present disclosure.
The preparation steps of the preparation method of the nano phononic crystal according to the embodiment of the disclosure adopt a uniform standard sample cleaning process, and the method comprises the following steps: samples were rinsed sequentially with Acetone (ACE), isopropyl alcohol (IPA), and deionized water (DI) for 5 minutes each, each with ultrasonic rinsing, and finally blow-dried with high purity nitrogen, which is not repeated in the following preparation steps.
The preparation steps of the preparation method of the nano phonon crystal according to the embodiment of the disclosure adopt the same electron beam exposure process, and the method comprises the following steps: PMMA (polymethyl methacrylate) is selected as electron beam photoresist, the rotating speed of a photoresist casting machine is 4000 revolutions per minute, the photoresist casting is 40 seconds, and the photoresist is baked on a photoresist baking table for 5 minutes at 180 ℃. The developing solution is prepared by selecting MIBK (methyl isobutyl ketone) to IPA (isopropyl alcohol) =1:3, and developing at 0 ℃ for 3 minutes, and the following preparation steps are not repeated.
The preparation steps of the preparation method of the nano phononic crystal according to the embodiment of the disclosure adopt the same metal stripping process, and the preparation method comprises the following steps: NMP (1-methyl-2-pyrrolidone) was used for soaking at a constant temperature of 80℃for 3 hours, and details thereof were omitted in the following preparation steps.
1-3, a preparation method of a nano phonon crystal is provided, which comprises the following steps:
s401: a first insulating layer 102 and a second insulating layer 103 are sequentially formed over a substrate 101.
According to an embodiment of the present disclosure, a silicon oxide layer having a thickness of 1000nm is formed as the first insulating layer 102 on the substrate 101 having a thickness of 670 μm using a thermal oxidation method; a silicon nitride layer having a thickness of 50nm was formed as the second insulating layer 103 on the silicon oxide layer 102 by a low-pressure vapor deposition method.
S402: an overlay exposure mark 301 is formed on the second insulating layer 103 using a patterning process.
According to an embodiment of the present disclosure, the product obtained in step S401 is cleaned using a standard sample cleaning process, and then a photoresist having a pattern of the overlay exposure mark 301 is formed at a predetermined position on the second insulating layer 103 by an electron beam exposure process; sequentially forming Ti with the thickness of 4nm and Au with the thickness of 30nm on the exposed area on the second insulating layer 103 and the photoresist by adopting an electron beam evaporation coating process, and finally stripping the rest photoresist and the metal layer on the rest photoresist by adopting a metal stripping process, and forming a complete etching exposure mark 301 at a preset position on the second insulating layer 103;
s403: forming grooves 105 and support columns 104 periodically arranged in the grooves 105 in the second insulating layer 103 and the first insulating layer 102 by adopting a patterning process; and
s404: a gate electrode 202 is formed on the first insulating layer 102 at the bottom of the recess 105, and a source-drain electrode 204 is formed on the second insulating layer 103.
Generally, the patterning process includes a semiconductor manufacturing process of coating photoresist, exposing, developing, etching, cleaning, and the like, which will be described in detail below.
Fig. 4A-4I schematically illustrate schematic diagrams of a process of preparing support pillars and electrodes of nano-phononic crystals according to an embodiment of the present disclosure.
As shown in fig. 4A to 4B, the product obtained in step S402 is cleaned using a standard cleaning tool, and then a first photoresist 601 is spin-coated on the second insulating layer 103 by an electron beam exposure process to form a structure as shown in fig. 4A, and then a portion of the first photoresist is removed, thereby forming a structure of the first photoresist 601 having a pattern periodically arranged as shown in fig. 4B on the second insulating layer 103.
As shown in fig. 4C to 4D, the exposed region of the second insulating layer 103 except the region covered by the first photoresist 601 is etched to the first insulating layer 102 by using the plasma etching process for etching silicon nitride in table 1, and then the exposed first insulating layer 102 is etched to a depth of 50nm by using the plasma etching process for etching silicon oxide in table 1, thereby forming the periodic support column structure without undercut structure as shown in fig. 4C.
The specific etching parameters of the same plasma etching process employed in the preparation steps according to the embodiments of the present disclosure are shown in table 1 below.
TABLE 1
| Etching material | Etching gas | Etching power | Etching gas pressure | Etch rate |
| SiO 2 | CHF 3 25sccm、Ar25sccm | 200W | 30mTorr | 33nm/min |
| SiN x | CHF 3 50sccm、O 2 25sccm | 200W | 30mTorr | 68nm/min |
According to an embodiment of the present disclosure, the same isotropic wet etching process is used, comprising: selecting hydrofluoric acid Buffer (BOE) as an etchant for etching for 45 seconds, wherein the chemical components are hydrofluoric acid and ammonium fluoride=1:6; hydrofluoric acid is the main component of etched silicon dioxide, and ammonium fluoride plays a role in buffering, so that the stability of the etching effect is improved, and the preparation steps are not repeated.
The first insulating layer 102 was further etched by an isotropic wet etching process so that the radius of the first insulating layer 102 was smaller than that of the second insulating layer 103, forming grooves 105 as shown in fig. 4D and support pillars 104 having an undercut structure in a periodic arrangement, the second insulating layer 103 portion of the support pillars 104 having a diameter of 500nm, and the space between the support pillars 104 being 1 μm.
As shown in fig. 4E to 4G, the remaining first photoresist 601 is removed, and the resultant product of S403 is cleaned using a standard cleaning tool. Through an electron beam exposure process, a second photoresist 602 is spin-coated on the exposed area on the second insulating layer 103 and all areas in the groove 105 to form a structure shown in fig. 4F, and then a part of the second photoresist 602 is removed to form a second photoresist 602 with an electrode pattern, so as to obtain the structure shown in fig. 4G.
As shown in fig. 4H to 4I, ti with a thickness of 4nm and Au with a thickness of 30nm are sequentially formed on the photoresist 602, the bottom region of the groove 105, the top of the support column 104 and the exposed region on the second insulating layer 103 by using an electron beam evaporation coating process, so as to form a structure as shown in fig. 4H. The Ti/Au metal layer on the support post 104 serves as a first metal layer 201, the Ti/Au metal layer on the bottom of the recess 105 serves as a gate electrode 202, and the Ti/Au metal layer on the second insulating layer 103 at the edge of the recess 105 serves as a second metal layer for smooth contact of the vibration layer with the source-drain electrode. A source-drain electrode (not shown in fig. 4H to 4I) is also formed on the second insulating layer 103. The remaining second photoresist and the metal layer thereon in fig. 4H are removed using a metal strip process and the resulting product of S404 is cleaned using a standard cleaning tool to form the structure shown in fig. 4I.
The method of preparing nano-phononic crystals according to one embodiment of the present disclosure further includes step S405 of covering the support posts 104 and at least a portion of the source-drain electrodes 204 with the vibration layer 401. In one embodiment, the step of covering the support column 104 and at least a portion of the source-drain electrode 204 with a single vibration layer 401, or the step of covering the support column 104 and at least a portion of the source-drain electrode 204 with multiple vibration layers.
Fig. 5A-5D schematically illustrate a process diagram for transferring a vibrating layer of nano-phonon crystals to support posts and electrodes prepared using the process illustrated in fig. 4A-4I, according to an embodiment of the present disclosure.
Referring to fig. 5A to 5D, the step of covering a single layer of the vibration layer 401 on at least a portion of the support column 104 and the source drain electrode 204 includes: adhering an adhesive layer 502 on a glass slide 503; attaching the single-layer vibration layer 401 to the adhesive layer 502 to form a carrying glass slide with the single-layer vibration layer; one surface of the slide glass 503 with the single-layer vibration layer 401 is bonded to at least a part of the support column 104 and the source/drain electrode 204, thereby forming the single-layer vibration layer 401.
Specifically, as shown in fig. 5A to 5B, a two-dimensional material adhesive layer 502 is stuck on the surface of a slide glass 503 to form an extract slide; the side of the adhesive tape 501 containing the vibration layer 401 to be transferred, which contains the vibration layer 401 to be transferred, is aligned with and attached to the adhesive layer 502 on the slide 503, as shown in fig. 5A; tearing off the tape 501 results in a structure with the vibration layer 401 on the adhesive layer 502 as shown in fig. 5B.
According to an embodiment of the present disclosure, the adhesion layer material comprises Polydimethylsiloxane (PDMS); the shape and size of the adhesive layer are square with a side length of 0.3 cm-2 cm, for example 0.4cm, 0.5cm, 1cm, 1.5cm. Embodiments of the present disclosure employ PDMS with a square side of 4mm as the material of the adhesive layer. The adhesive tape is a Scotch810 single-sided adhesive tape; the material of the vibration layer is graphene.
As shown in fig. 5C-5D, the slide with the vibration layer 401 is inverted on a fixed displacement table (not shown) that is moved to align the slide with periodically arranged support columns 104, as shown in fig. 5C; the vibration layer 401 can cover the first metal layer 201, the second metal layer 203 and part of the source-drain electrode 204 (not shown in fig. 5C-5D) on the periodically arranged support columns 104, and after the vibration layer is completely attached, the lifting slide is slowly lifted to form a suspension structure, so that the transfer of the vibration layer 401 is completed.
According to the embodiment of the disclosure, the vibration layer obtained by the transfer method is of a film structure with a complete surface, so that the nano phonon crystal of the embodiment of the disclosure has the vibration layer with the complete surface. Therefore, the possibility of cracking of the vibration layer in the preparation process can be effectively reduced, the failure of the vibration layer caused by inconsistent aperture size and aperture interval of the periodic holes in the process of processing the periodic holes is reduced, and the possibility of lower performance of nano phonon crystals is avoided; on the other hand, the possibility that the surface of the vibration layer is polluted due to the fact that the etching technology is directly used for the vibration layer, and then defects are generated on the surface of the vibration layer is avoided.
As shown in fig. 1, the nano-phonon crystal shown in fig. 1 is finally obtained by the preparation method of the nano-phonon crystal of S401 to S405.
FIG. 6 schematically illustrates a schematic diagram of a nano-phononic crystal according to an embodiment of the present disclosure; fig. 7 schematically shows a relationship between a voltage applied to the gate electrode and a resonance frequency of the vibration layer in the nano-phonon crystal of fig. 6.
As shown in fig. 6, according to an embodiment of the present disclosure, a frequency-modulated microwave voltage signal is applied to a source electrode of the nano-photonic crystal in fig. 6, an electrostatic voltage is applied to a gate electrode for modulation, a mixing current is measured at a drain electrode, and a graph of a relationship between a voltage applied to the gate electrode and a resonance frequency of a vibration layer in the nano-photonic crystal shown in fig. 7 is drawn.
As shown in fig. 7, from the graph of the relationship between the resonant frequency and the gate voltage of the nano-phonon crystal, a plurality of adjacent band-shaped resonant modes are formed in fig. 7, that is, when the gate voltage is changed, the resonant frequency of the graphene nano-phonon crystal also moves, which means that the nano-phonon crystal of the present disclosure can regulate the band structure of the phonon crystal through the voltage of the gate.
According to embodiments of the present disclosure, the entire preparation flow of the preparation method performs the alignment of the overlay of the entire preparation process by using one overlay exposure mark 301.
The foregoing description of the preferred embodiments of the present disclosure is not intended to limit the disclosure, but rather to cover all modifications, equivalents, improvements and alternatives falling within the spirit and principles of the present disclosure.
Claims (10)
1. A nano-phononic crystal comprising:
a substrate;
a first insulating layer formed on the substrate;
a second insulating layer formed on the first insulating layer, grooves being formed on the first insulating layer and the second insulating layer, a plurality of support columns formed of the first insulating layer and the second insulating layer extending from the bottoms of the grooves being provided in the grooves;
a gate electrode formed at the bottom of the recess;
a source/drain electrode formed on the second insulating layer; and
a vibration layer overlying at least a portion of the source-drain electrodes, and the support posts, the vibration layer adapted to produce resonant vibrations;
wherein the vibration layer is made of a two-dimensional nanomaterial and comprises a single-layer structure or a multi-layer stacked structure; and the material for manufacturing the vibration layer comprises at least one of graphene, molybdenum disulfide and boron nitride.
2. The nano-phononic crystal according to claim 1, characterized in that,
the first insulating layer is made of silicon oxide, and the second insulating layer is made of silicon nitride; and/or the support columns are periodically arranged; and
the diameter of the portion of the support post made of the first insulating layer is smaller than the diameter of the portion made of the second insulating layer.
3. The nano-phononic crystal according to claim 1, characterized in that,
the thickness of the substrate is 500-800 mu m;
the thickness of the first insulating layer is 1000 nm-2000 nm;
the thickness of the second insulating layer is 10 nm-200 nm;
wherein the material for manufacturing the substrate comprises an insulating material; and
wherein the insulating material comprises at least one of silicon, silicon dioxide and aluminum oxide.
4. The nano-phononic crystal according to claim 1, wherein the material from which either of the gate electrode and the source-drain electrode is made comprises one of titanium, palladium, gold.
5. The nano-phononic crystal according to claim 4, characterized in that,
the thickness of the titanium comprises 3 nm-5 nm;
the thickness of the gold comprises 20 nm-40 nm; and
the thickness of the palladium comprises 20 nm-40 nm.
6. The nano-phononic crystal according to any one of the claims 1-3, characterized in, that the nano-phononic crystal further comprises an overlay exposure mark; the overlay exposure mark is formed on the exposed area of the second insulating layer.
7. The nano-phononic crystal according to claim 1-3, characterized in that,
a first metal layer is further arranged on the support column; and
and a second metal layer is arranged at the upper edge of the opening of the groove, and the vibration layer is in smooth contact with the source-drain electrode through the second metal layer.
8. A method of preparing the nano-phononic crystal according to any one of claims 1-7, comprising:
sequentially forming a first insulating layer and a second insulating layer on a substrate;
forming an overlay exposure mark on the second insulating layer by adopting a patterning process;
forming grooves and support columns periodically arranged in the grooves in the second insulating layer and the first insulating layer by adopting a patterning process;
forming a gate electrode on the first insulating layer at the bottom of the groove, and forming a source-drain electrode on the second insulating layer; and
and covering at least one part of the support column and the source-drain electrode with a vibration layer.
9. The method of claim 8, wherein the covering the support posts and the source-drain electrodes with a vibration layer comprises:
a step of covering a single layer of the vibration layer on at least a part of the support column and the source-drain electrode or a step of covering a plurality of layers of the vibration layer on at least a part of the support column and the source-drain electrode.
10. The method of claim 9, wherein the step of covering the support posts and at least a portion of the source-drain electrodes with a single layer of the vibration layer comprises:
adhering an adhesive layer on the glass slide;
attaching a single-layer vibration layer to the adhesive layer to form an extract glass with the single-layer vibration layer; and
and attaching one surface of the glass slide with the single-layer vibration layer to at least one part of the support column and the source-drain electrode to form the single-layer vibration layer.
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