CN113793890A - Threaded deep ultraviolet device structure - Google Patents
Threaded deep ultraviolet device structure Download PDFInfo
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- CN113793890A CN113793890A CN202111357713.XA CN202111357713A CN113793890A CN 113793890 A CN113793890 A CN 113793890A CN 202111357713 A CN202111357713 A CN 202111357713A CN 113793890 A CN113793890 A CN 113793890A
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000002093 peripheral effect Effects 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 238000009434 installation Methods 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 description 7
- 238000000227 grinding Methods 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052755 nonmetal Inorganic materials 0.000 description 4
- 238000004659 sterilization and disinfection Methods 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- 230000001954 sterilising effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 241000463219 Epitheca Species 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
- A61L2/00—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor
- A61L2/02—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor using physical phenomena
- A61L2/08—Radiation
- A61L2/10—Ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Animal Behavior & Ethology (AREA)
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Abstract
The invention discloses a threaded deep ultraviolet device structure, which relates to the technical field of semiconductor devices and comprises an upper shell, a deep ultraviolet device and a lower shell, wherein the deep ultraviolet device is connected with the lower shell through the upper shell, the peripheral surface of the upper shell is provided with a threaded structure, the deep ultraviolet device comprises a substrate, a deep ultraviolet light-emitting diode, a protection diode and a plurality of conductive metal columns, the plurality of conductive metal columns penetrate through the substrate, two ends of each conductive metal column are respectively connected with a first circuit layer structure and a second circuit layer structure, the deep ultraviolet light-emitting diode and the protection diode form a parallel circuit, the deep ultraviolet light-emitting diode and the protection diode are both arranged on the first circuit layer structure, the outer sides of the deep ultraviolet light-emitting diode and the protection diode are provided with a dam, and a lens cover is arranged on the outer sides of the deep ultraviolet light-emitting diode and the protection diode. The threaded deep ultraviolet device structure realizes the installation, replacement and repair under the condition of no heating, and further improves the stability of the circuit board.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a threaded deep ultraviolet device structure.
Background
The deep ultraviolet light emitting diode (UVC LED) has the advantages of high reliability, long service life, fast reaction, low power consumption, environmental protection, no pollution, small size and the like, and is widely applied to the fields of water sterilization, air sterilization, surface sterilization and the like. It is worth noting that, at present, a single deep ultraviolet device is generally used and welded on a circuit board through high temperature, the circuit board forms a plurality of integrations, and because the single deep ultraviolet device is welded through high temperature, great difficulty is caused for the installation, replacement and repair of the plurality of integrated circuit boards, especially, the operation of installation, replacement and repair cannot be completed for a consumer application end, and once the deep ultraviolet device is abnormal, the whole sterilization and disinfection equipment cannot be used.
Disclosure of Invention
The invention aims to provide a threaded deep ultraviolet device structure to solve the problems in the prior art, and a single threaded deep ultraviolet device structure realizes installation, replacement and repair under the condition of no heating, so that the stability of a circuit board integrating a plurality of threaded deep ultraviolet device structures is further improved.
In order to achieve the purpose, the invention provides the following scheme:
the invention provides a threaded deep ultraviolet device structure, which comprises an upper shell, a deep ultraviolet device and a lower shell, wherein the deep ultraviolet device is connected with the lower shell through the upper shell, the outer peripheral surface of the upper shell is provided with a threaded structure, the deep ultraviolet device comprises a substrate, a deep ultraviolet light-emitting diode, a protective diode and a plurality of conductive metal columns, the upper surface of the substrate is provided with a first circuit layer structure, the lower surface of the substrate is provided with a second circuit layer structure, the plurality of conductive metal columns penetrate through the substrate, two ends of each conductive metal column are respectively connected with the first circuit layer structure and the second circuit layer structure, the deep ultraviolet light-emitting diode and the protective diode form a parallel circuit, the deep ultraviolet light-emitting diode and the protective diode are both arranged on the first circuit layer structure, and the outer sides of the deep ultraviolet light-emitting diode and the protective diode are provided with a dam enclosure, the inner side of the box dam is provided with an inner ring step, the inner ring step is provided with a lens, and the lens is covered on the outer sides of the deep ultraviolet light-emitting diode and the protection diode.
Preferably, the upper shell includes an upper shell body, the outer peripheral surface of the upper shell body is provided with the thread structure, the upper surface of the upper shell body is provided with a plurality of stress columns, one side of each stress column is a curved surface, the lower surface of the upper shell body is provided with a placement groove, the shape of the placement groove is matched with the shape of the base plate, the inner side of the placement groove is provided with an upper shell hole, each curved surface is arranged towards the upper shell hole, the placement groove is provided with a plurality of upper fixing column holes, the outer side of the placement groove is provided with an upper shell step, the upper shell step is matched with the lower shell, and the upper shell step is provided with a plurality of lower fixing column holes.
Preferably, the upper surface of the first circuit layer structure is further provided with a plurality of upper fixing columns, the upper fixing columns correspond to the upper fixing column holes one to one, and the dam and the lens penetrate through the upper shell hole.
Preferably, the height of the upper fixing column is the same as that of the inner ring step; the depth of the placing groove is equal to the sum of the thicknesses of the substrate, the first circuit layer structure and the second circuit layer structure.
Preferably, the first circuit layer structure comprises a first functional area circuit layer, a second functional area circuit layer and a non-functional area circuit layer, the first functional area circuit layer and the second functional area circuit layer are arranged oppositely, and a space is arranged between the first functional area circuit layer and the second functional area circuit layer, the non-functional area circuit layer is arranged outside the first functional area circuit layer and the second functional area circuit layer, a space is arranged between the non-functional area circuit layer and the first functional area circuit layer and between the non-functional area circuit layer and the second functional area circuit layer, the box dam and the upper fixing columns are arranged on the non-functional area circuit layer, a space is arranged between the inner ring step and the first functional area circuit layer and between the inner ring step and the second functional area circuit layer, the deep ultraviolet light emitting diode and the protection diode are arranged on the first functional area circuit layer and the second functional area circuit layer.
Preferably, the second circuit layer structure includes a first structure and a second structure, a space is provided between the first structure and the second structure, the first structure corresponds to the first functional area circuit layer, and the second structure corresponds to the second functional area circuit layer.
Preferably, the lower surface of the first structure and the lower surface of the second structure are both provided with a pad, the length of the pad is smaller than or equal to that of the first structure or the second structure, the width of the pad is smaller than or equal to that of the first structure or the second structure, and the thickness of the pad is larger than that of the first structure or the second structure and is smaller than or equal to the height of the dam.
Preferably, the lower casing comprises a lower casing body, a lower casing hole is formed in the lower casing body, lower fixing columns are arranged on the lower casing body, and the lower fixing columns correspond to the lower fixing column holes one to one.
Preferably, the thickness of the lower case body is identical to the height of the upper case step.
Compared with the prior art, the invention has the following technical effects:
the invention realizes detachable connection with the circuit board through the thread structure, realizes integration of a plurality of threaded deep ultraviolet device structures on the circuit board, conveniently and quickly loads and unloads a single threaded deep ultraviolet device structure which needs to be installed and replaced for repair, and the whole operation process is not required to be completed under the condition of heating.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
FIG. 1 is a schematic front view of a threaded deep ultraviolet device structure of the present invention;
FIG. 2 is a schematic backside view of a threaded deep ultraviolet device structure of the present invention;
FIG. 3 is an exploded front view of a threaded deep ultraviolet device structure of the present invention;
FIG. 4 is an exploded view of the back side of the threaded deep ultraviolet device structure of the present invention;
FIG. 5 is a schematic front view of a deep ultraviolet device of the present invention;
FIG. 6 is a schematic backside view of a deep ultraviolet device of the present invention;
wherein: 100-a threaded deep ultraviolet device structure, 1-an upper case, 2-a deep ultraviolet device, 3-a lower case, 4-a threaded structure, 5-a substrate, 6-a deep ultraviolet light emitting diode, 7-a protective diode, 8-a conductive metal post, 9-a first circuit layer structure, 10-a second circuit layer structure, 11-a dam, 12-an inner ring step, 13-a lens, 14-an upper case body, 15-a stress post, 16-a curved surface, 17-a placement groove, 18-an upper case hole, 19-an upper fixed post hole, 20-an upper case step, 21-a lower fixed post hole, 22-an upper fixed post, 23-a first functional area circuit layer, 24-a second functional area circuit layer, 25-a non-functional area circuit layer, 26-a first structure, 27-second structure, 28-pad, 29-lower case body, 30-lower case hole, 31-lower fixing post, 32-through hole.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive effort based on the embodiments of the present invention, are within the scope of the present invention.
The invention aims to provide a threaded deep ultraviolet device structure to solve the problems in the prior art, and a single threaded deep ultraviolet device structure realizes installation, replacement and repair under the condition of no heating, so that the stability of a circuit board integrating a plurality of threaded deep ultraviolet device structures is further improved.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
As shown in fig. 1-6: the embodiment provides a threaded deep ultraviolet device structure 100, which comprises an upper shell 1, a deep ultraviolet device 2 and a lower shell 3, wherein the deep ultraviolet device 2 is connected with the lower shell 3 through the upper shell 1, a threaded structure 4 is arranged on the outer circumferential surface of the upper shell 1, the deep ultraviolet device 2 comprises a substrate 5, a deep ultraviolet light-emitting diode 6, a protective diode 7 and a plurality of conductive metal columns 8, the substrate 5 is made of ceramics, the substrate 5 is preferably square, a first circuit layer structure 9 is arranged on the upper surface of the substrate 5, a second circuit layer structure 10 is arranged on the lower surface of the substrate 5, the plurality of conductive metal columns 8 are arranged through the substrate 5, two ends of each conductive metal column 8 are respectively connected with the first circuit layer structure 9 and the second circuit layer structure 10, the substrate 5 is communicated with the first circuit layer structure 9 and the second circuit layer structure 10 through the conductive metal columns 8, the deep ultraviolet light-emitting diode 6 and the protective diode 7 form a parallel circuit, the deep ultraviolet light emitting diode 6 and the protection diode 7 are both arranged on the first circuit layer structure 9, the deep ultraviolet light emitting diode 6 is positioned at the center of the first circuit layer structure 9, the protection diode 7 is positioned at one side of the deep ultraviolet light emitting diode 6, the outer sides of the deep ultraviolet light emitting diode 6 and the protection diode 7 are provided with an enclosure dam 11, the inner side of the enclosure dam 11 is provided with an inner ring step 12, the enclosure dam 11 and the inner ring step 12 are both formed by adopting electroplated copper metal, the inner ring step 12 is provided with a lens 13, by uniformly coating the adhesive on the inner ring step 12, the lens 13 is placed on the inner ring step 12 and uniformly stressed on the lens 13, the lens 13 forms a sealed protection cavity for the deep ultraviolet light emitting diode 6 and the protection diode 7 by reaching the binding force with certain shearing strength at a certain temperature, and the lens 13 covers the outer sides of the deep ultraviolet light emitting diode 6 and the protection diode 7. The embodiment is detachably connected with the circuit board through the thread structure 4, the multiple threaded deep ultraviolet device structures 100 are integrated on the circuit board, the single threaded deep ultraviolet device structure 100 needing to be installed and repaired is convenient and fast to assemble and disassemble, and the whole operation process is not required to be completed under the heating condition.
In this embodiment, the first circuit layer structure 9 and the second circuit layer structure 10 are formed by electroplating a layer of copper metal according to the corresponding circuit structure design.
In this embodiment, the upper casing 1 includes an upper casing body 14, the upper casing body 14 is made of a metal material or a non-metal material, and when a metal aluminum material is adopted, the upper casing body is milled and formed by a machine tool; an upper shell hole 18 is formed in the middle of an upper shell body 14 through a grinding tool punching machine, the upper shell hole 18 is a light emitting hole, a placing groove 17 is milled in one surface of the upper shell body 14 through a machine tool, the shape of the placing groove 17 is matched with the base plate 5, the depth of the placing groove 17 is equal to the sum of the thicknesses of the base plate 5, the first circuit layer structure 9 and the second circuit layer structure 10, the placing groove 17 and the base plate 5 are preferably square, upper fixing column holes 19 are formed in four angular positions of the placing groove 17 through punching drills, the upper fixing column holes 19 correspond to the upper fixing columns 22 in position, the opening depth of the upper fixing column holes 19 is consistent with the height of the upper fixing columns 22, and a certain fixing stress surface for the deep ultraviolet device 2 is formed; an upper shell step 20 is arranged on the outer side of the placing groove 17, after the upper shell 1 and the deep ultraviolet device 2 are installed, the upper shell step 20 is flush with the second circuit layer structure 10, the upper shell step 20 is matched with the lower shell 3, after the upper shell 1 and the lower shell 3 are installed, the lower shell 3 is located on the upper shell step 20, a plurality of lower fixing column holes 21, preferably four lower fixing column holes 21 are formed in the upper shell step 20, and the four lower fixing column holes 21 are respectively located at four corners of the upper shell step 20; the upper surface and the lower surface of the upper shell 1 are fixed through a jig, the outer peripheral surface of the upper shell body 14 is processed through a machine tool or a grinding tool to realize a convex continuous spiral structure, and the purpose of the thread function of the upper shell 1 is realized; four stress columns 15 are milled out through a machine tool on the other surface of the upper shell body 14, the four stress columns 15 are uniformly arranged around the upper shell hole 18, the height of each stress column 15 is smaller than that of the box dam 11, the inner side surface of each stress column 15 is milled into a bowl-shaped curved surface 16 through the machine tool, each curved surface 16 is arranged towards the upper shell hole 18, the four curved surfaces 16 are fixed to the positions of the matched light-gathering cups, and the installation and locking purposes of the whole threaded deep ultraviolet device structure 100 are achieved through horizontal rotation stress on the stress columns 15.
When the upper shell body 14 is made of a non-metal material, the upper shell body is formed by injection molding and extrusion through a grinding tool.
In this embodiment, the upper surface of the first circuit layer structure 9 is further provided with a plurality of upper fixing posts 22, the height of each upper fixing post 22 is the same as that of the inner ring step 12, the upper fixing posts 22 are located on the outer side of the dam 11, preferably, four upper fixing posts 22 are arranged at four corners of the first circuit layer structure 9, the upper fixing posts 22 are made of metal, the upper fixing posts 22 correspond to the upper fixing post holes 19 one to one, the height of each upper fixing post 22 is the same as the depth of each upper fixing post hole 19, and the dam 11 and the lens 13 are arranged by penetrating through the upper shell hole 18. When the upper shell 1 is buckled with the lower shell 3, each upper fixing column 22 is respectively positioned in one upper fixing column hole 19 to form a certain fixing stress surface for the deep ultraviolet device 2.
In this embodiment, the first circuit layer structure 9 includes a first functional area circuit layer 23, a second functional area circuit layer 24 and a non-functional area circuit layer 25, the first functional area circuit layer 23 and the second functional area circuit layer 24 are oppositely disposed, a space is provided between the first functional area circuit layer 23 and the second functional area circuit layer 24, the non-functional area circuit layer 25 is disposed at the outer side of the first functional area circuit layer 23 and the second functional area circuit layer 24, a space is provided between the non-functional area circuit layer 25 and the first functional area circuit layer 23 and the second functional area circuit layer 24, a plurality of upper fixing posts 22 are disposed on the non-functional area circuit layer 25, the dam 11 is electroplated on the non-functional area circuit layer 25, a space is provided between the inner ring step 12 and the first functional area circuit layer 23 and the second functional area circuit layer 24, the deep ultraviolet light emitting diode 6 and the protection diode 7 are welded on the first functional area circuit layer 23 and the second functional area circuit layer 24 by high temperature, i.e. the deep ultraviolet light emitting diode 6 and the protection diode 7 are both connected to the first functional zone circuit layer 23 and to the second functional zone circuit layer 24.
In this embodiment, the second circuit layer structure 10 includes a first structure 26 and a second structure 27, a space is provided between the first structure 26 and the second structure 27, the first structure 26 corresponds to the first functional region circuit layer 23, and the second structure 27 corresponds to the second functional region circuit layer 24.
In this embodiment, the lower surface of the first structure 26 and the lower surface of the second structure 27 are both thickened by a copper electroplating process to form two independent conductive pads 28, the length of each pad 28 is less than or equal to the length of the first structure 26 or the second structure 27, the width of each pad 28 is less than or equal to the width of the first structure 26 or the second structure 27, and the thickness of each pad 28 is greater than the thickness of the first structure 26 or the second structure 27 and is less than or equal to the height of the dam 11.
In this embodiment, the substrate 5, the first functional area circuit layer 23, the second functional area circuit layer 24, the first structure 26, and the second structure 27 are all formed with a through hole 32 by laser drilling according to the position of the conductive metal pillar 8, and the conductive metal pillar 8 is formed by electroplating copper metal in the through hole 32 of the substrate 5, so that the front surface circuit and the back surface circuit of the substrate 5 are conducted in two directions.
In this embodiment, the lower case 3 includes a lower case body 29, the thickness of the lower case body 29 is the same as the height of the upper case step 20, the lower case body 29 is made of metal or non-metal material, and when the metal aluminum material is adopted, the milling forming is performed by a machine tool; the center of inferior valve body 29 is located to open through the grinding apparatus punching machine and is established inferior valve hole 30, and inferior valve hole 30 is the pad external hole, and the one side of inferior valve body 29 is milled into four lower fixed columns 31 through the lathe, and lower fixed column 31 is with lower fixed column hole 21 one-to-one, and the height of lower fixed column 31 is unanimous with the degree of depth in lower fixed column hole 21, realizes inferior valve 3 and upper shell 1 formation overall structure. When the upper shell 1 is buckled with the lower shell 3, each lower fixing column 31 is respectively positioned in a lower fixing column hole 21 to form a certain fixing stress surface for the deep ultraviolet device 2, so that the lower shell 3 and the upper shell 1 form an integral structure.
When the lower shell body 29 is made of a non-metal material, the lower shell body is formed by injection molding and extrusion through a grinding tool.
In the embodiment, the upper fixing column 22 is located in the upper fixing column hole 19, the lower fixing column 31 is located in the lower fixing column hole 21, and the upper shell 1, the deep ultraviolet device 2 and the lower shell 3 are combined into a firm whole, so that the threaded deep ultraviolet device structure 100 is formed.
The threaded deep ultraviolet device structure 100 of this embodiment has solved the installation welding and has had the difficult problem of reprocessing of single threaded deep ultraviolet device structure 100 of the circuit board of a plurality of threaded deep ultraviolet device structures 100, directly exert the horizontal rotation external force to four stress columns 15 on epitheca 1, inlay the threaded deep ultraviolet device structure 100 of this embodiment into the mount that combines with the circuit board through the rotation of helicitic texture 4, through setting helicitic texture 4 and mount hole to the same number of revolutions, make two pads 28 of threaded deep ultraviolet device structure 100 coincide with the pad of circuit board and contact. The single threaded deep ultraviolet device structure 100 of the circuit board is repaired by non-heating welding and non-heating, so that the problem of replacing the deep ultraviolet device 2 at the application end of a consumer is solved, and the overall performance of the circuit board with the plurality of threaded deep ultraviolet device structures 100 is improved.
The principle and the implementation mode of the present invention are explained by applying specific examples in the present specification, and the above descriptions of the examples are only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (9)
1. A threaded deep ultraviolet device structure is characterized in that: the deep ultraviolet device is connected with the lower shell through the upper shell, a thread structure is arranged on the outer peripheral surface of the upper shell, the deep ultraviolet device comprises a substrate, deep ultraviolet light-emitting diodes, protection diodes and a plurality of conductive metal columns, a first circuit layer structure is arranged on the upper surface of the substrate, a second circuit layer structure is arranged on the lower surface of the substrate, the plurality of conductive metal columns penetrate through the substrate, two ends of each conductive metal column are respectively connected with the first circuit layer structure and the second circuit layer structure, the deep ultraviolet light-emitting diodes and the protection diodes form a parallel circuit, the deep ultraviolet light-emitting diodes and the protection diodes are both arranged on the first circuit layer structure, and a dam is arranged on the outer sides of the deep ultraviolet light-emitting diodes and the protection diodes, the inner side of the box dam is provided with an inner ring step, the inner ring step is provided with a lens, and the lens is covered on the outer sides of the deep ultraviolet light-emitting diode and the protection diode.
2. The threaded deep ultraviolet device structure of claim 1, wherein: the upper shell comprises an upper shell body, the outer peripheral face of the upper shell body is provided with the threaded structure, the upper surface of the upper shell body is provided with a plurality of stress columns, one side of each stress column is a curved surface, the lower surface of the upper shell body is provided with a placing groove, the shape of the placing groove is matched with that of the base plate, an upper shell hole is formed in the inner side of the placing groove, each curved surface faces the upper shell hole, a plurality of upper fixing column holes are formed in the placing groove, an upper shell step is arranged on the outer side of the placing groove, the upper shell step is matched with the lower shell, and a plurality of lower fixing column holes are formed in the upper shell step.
3. The threaded deep ultraviolet device structure of claim 2, wherein: the upper surface of the first circuit layer structure is further provided with a plurality of upper fixing columns, the upper fixing columns correspond to the upper fixing column holes one to one, and the box dam and the lens penetrate through the upper shell holes.
4. The threaded deep ultraviolet device structure of claim 3, wherein: the height of the upper fixing column is the same as that of the inner ring step; the depth of the placing groove is equal to the sum of the thicknesses of the substrate, the first circuit layer structure and the second circuit layer structure.
5. The threaded deep ultraviolet device structure of claim 3, wherein: the first circuit layer structure comprises a first functional area circuit layer, a second functional area circuit layer and a non-functional area circuit layer, the first functional area circuit layer and the second functional area circuit layer are arranged oppositely, and a space is arranged between the first functional area circuit layer and the second functional area circuit layer, the non-functional area circuit layer is arranged outside the first functional area circuit layer and the second functional area circuit layer, a space is arranged between the non-functional area circuit layer and the first functional area circuit layer and between the non-functional area circuit layer and the second functional area circuit layer, the box dam and the upper fixing columns are arranged on the non-functional area circuit layer, a space is arranged between the inner ring step and the first functional area circuit layer and between the inner ring step and the second functional area circuit layer, the deep ultraviolet light emitting diode and the protection diode are arranged on the first functional area circuit layer and the second functional area circuit layer.
6. The threaded deep ultraviolet device structure of claim 5, wherein: the second circuit layer structure comprises a first structure and a second structure, a distance is arranged between the first structure and the second structure, the first structure corresponds to the first functional area circuit layer, and the second structure corresponds to the second functional area circuit layer.
7. The threaded deep ultraviolet device structure of claim 6, wherein: the lower surface of the first structure with the lower surface of second structure all is provided with the pad, the length less than or equal to of pad first structure or the length of second structure, the width less than or equal to of pad first structure or the width of second structure, the thickness of pad is greater than first structure or the thickness of second structure and less than or equal to the height of dam.
8. The threaded deep ultraviolet device structure of claim 2, wherein: the lower shell comprises a lower shell body, a lower shell hole is formed in the lower shell body, lower fixing columns are arranged on the lower shell body, and the lower fixing columns correspond to the lower fixing column holes one to one.
9. The threaded deep ultraviolet device structure of claim 8, wherein: the thickness of the lower shell body is consistent with the height of the upper shell step.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111357713.XA CN113793890B (en) | 2021-11-17 | 2021-11-17 | Threaded deep ultraviolet device structure |
| PCT/CN2022/086478 WO2023087609A1 (en) | 2021-11-17 | 2022-04-13 | Threaded deep ultraviolet device structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111357713.XA CN113793890B (en) | 2021-11-17 | 2021-11-17 | Threaded deep ultraviolet device structure |
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| Publication Number | Publication Date |
|---|---|
| CN113793890A true CN113793890A (en) | 2021-12-14 |
| CN113793890B CN113793890B (en) | 2022-02-11 |
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| CN202111357713.XA Active CN113793890B (en) | 2021-11-17 | 2021-11-17 | Threaded deep ultraviolet device structure |
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| CN (1) | CN113793890B (en) |
| WO (1) | WO2023087609A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| WO2023087609A1 (en) | 2023-05-25 |
| CN113793890B (en) | 2022-02-11 |
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