CN113785290B - 存储器装置和控制存储器装置的方法 - Google Patents
存储器装置和控制存储器装置的方法 Download PDFInfo
- Publication number
- CN113785290B CN113785290B CN202080032880.4A CN202080032880A CN113785290B CN 113785290 B CN113785290 B CN 113785290B CN 202080032880 A CN202080032880 A CN 202080032880A CN 113785290 B CN113785290 B CN 113785290B
- Authority
- CN
- China
- Prior art keywords
- memory
- memory cell
- voltages
- rows
- column
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 34
- 230000004044 response Effects 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims description 6
- 238000012795 verification Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 35
- 238000010586 diagram Methods 0.000 description 24
- 239000011159 matrix material Substances 0.000 description 21
- 239000000872 buffer Substances 0.000 description 13
- 230000008859 change Effects 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000013528 artificial neural network Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000010801 machine learning Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000003058 natural language processing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K27/00—Construction of housing; Use of materials therefor
- F16K27/12—Covers for housings
-
- E—FIXED CONSTRUCTIONS
- E03—WATER SUPPLY; SEWERAGE
- E03B—INSTALLATIONS OR METHODS FOR OBTAINING, COLLECTING, OR DISTRIBUTING WATER
- E03B7/00—Water main or service pipe systems
- E03B7/09—Component parts or accessories
- E03B7/10—Devices preventing bursting of pipes by freezing
- E03B7/12—Devices preventing bursting of pipes by freezing by preventing freezing
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K49/00—Means in or on valves for heating or cooling
- F16K49/002—Electric heating means
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/10—Complex mathematical operations
- G06F17/16—Matrix or vector computation, e.g. matrix-matrix or matrix-vector multiplication, matrix factorization
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0028—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0064—Verifying circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Mathematical Physics (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Analysis (AREA)
- Mathematical Optimization (AREA)
- Theoretical Computer Science (AREA)
- Computational Mathematics (AREA)
- Data Mining & Analysis (AREA)
- Pure & Applied Mathematics (AREA)
- Hydrology & Water Resources (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Water Supply & Treatment (AREA)
- Public Health (AREA)
- Algebra (AREA)
- Computing Systems (AREA)
- Databases & Information Systems (AREA)
- Software Systems (AREA)
- Semiconductor Memories (AREA)
- Thermal Insulation (AREA)
- Domestic Plumbing Installations (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962855219P | 2019-05-31 | 2019-05-31 | |
US62/855,219 | 2019-05-31 | ||
PCT/US2020/034919 WO2020243300A1 (en) | 2019-05-31 | 2020-05-28 | Memory-based vector-matrix multiplication |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113785290A CN113785290A (zh) | 2021-12-10 |
CN113785290B true CN113785290B (zh) | 2024-05-31 |
Family
ID=73550242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202080032880.4A Active CN113785290B (zh) | 2019-05-31 | 2020-05-28 | 存储器装置和控制存储器装置的方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US20200378513A1 (zh) |
CN (1) | CN113785290B (zh) |
WO (1) | WO2020243300A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA3106728C (en) * | 2020-01-22 | 2023-08-29 | Paul Arlo Blumer | Fixture accessory apparatus and method of using same |
US11408152B2 (en) * | 2020-10-01 | 2022-08-09 | Jonathan David Loutzenhiser | Apparatus for blowing hose |
US11989440B2 (en) * | 2021-08-11 | 2024-05-21 | Silicon Storage Technology, Inc. | Hybrid memory system configurable to store neural memory weight data in analog form or digital form |
CN117093264A (zh) * | 2022-05-13 | 2023-11-21 | 长鑫存储技术有限公司 | 片选信号的生成方法及设备 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7382647B1 (en) * | 2007-02-27 | 2008-06-03 | International Business Machines Corporation | Rectifying element for a crosspoint based memory array architecture |
CN102057440A (zh) * | 2009-05-29 | 2011-05-11 | 希捷科技有限公司 | 具有集成位线电容的nand闪存 |
CN103403807A (zh) * | 2011-06-16 | 2013-11-20 | 株式会社东芝 | 包括可变电阻元件的非易失性半导体存储器设备 |
EP2736044A1 (en) * | 2012-11-22 | 2014-05-28 | Technische Universität Wien | Rram implication logic gates |
US9001553B1 (en) * | 2012-11-06 | 2015-04-07 | Adesto Technologies Corporation | Resistive devices and methods of operation thereof |
CN106463173A (zh) * | 2014-05-07 | 2017-02-22 | 美光科技公司 | 用于交叉点式阵列的双向存取的设备及方法 |
CN107492391A (zh) * | 2016-06-13 | 2017-12-19 | 桑迪士克科技有限责任公司 | 基于单元电流的位线电压 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7835173B2 (en) * | 2008-10-31 | 2010-11-16 | Micron Technology, Inc. | Resistive memory |
US8737111B2 (en) * | 2010-06-18 | 2014-05-27 | Sandisk 3D Llc | Memory cell with resistance-switching layers |
US9910827B2 (en) * | 2016-07-01 | 2018-03-06 | Hewlett Packard Enterprise Development Lp | Vector-matrix multiplications involving negative values |
-
2020
- 2020-05-26 US US16/882,998 patent/US20200378513A1/en not_active Abandoned
- 2020-05-28 CN CN202080032880.4A patent/CN113785290B/zh active Active
- 2020-05-28 WO PCT/US2020/034919 patent/WO2020243300A1/en active Application Filing
- 2020-05-28 US US17/601,778 patent/US20220156345A1/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7382647B1 (en) * | 2007-02-27 | 2008-06-03 | International Business Machines Corporation | Rectifying element for a crosspoint based memory array architecture |
CN102057440A (zh) * | 2009-05-29 | 2011-05-11 | 希捷科技有限公司 | 具有集成位线电容的nand闪存 |
CN103403807A (zh) * | 2011-06-16 | 2013-11-20 | 株式会社东芝 | 包括可变电阻元件的非易失性半导体存储器设备 |
US9001553B1 (en) * | 2012-11-06 | 2015-04-07 | Adesto Technologies Corporation | Resistive devices and methods of operation thereof |
EP2736044A1 (en) * | 2012-11-22 | 2014-05-28 | Technische Universität Wien | Rram implication logic gates |
CN106463173A (zh) * | 2014-05-07 | 2017-02-22 | 美光科技公司 | 用于交叉点式阵列的双向存取的设备及方法 |
CN107492391A (zh) * | 2016-06-13 | 2017-12-19 | 桑迪士克科技有限责任公司 | 基于单元电流的位线电压 |
Also Published As
Publication number | Publication date |
---|---|
CN113785290A (zh) | 2021-12-10 |
US20220156345A1 (en) | 2022-05-19 |
US20200378513A1 (en) | 2020-12-03 |
WO2020243300A1 (en) | 2020-12-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN113785290B (zh) | 存储器装置和控制存储器装置的方法 | |
JP6585845B2 (ja) | メモリおよびその動作を含む装置および方法 | |
US11657259B2 (en) | Kernel transformation techniques to reduce power consumption of binary input, binary weight in-memory convolutional neural network inference engine | |
US11587615B2 (en) | Cross-point memory compensation | |
US11568200B2 (en) | Accelerating sparse matrix multiplication in storage class memory-based convolutional neural network inference | |
US8611136B2 (en) | Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance | |
US9601194B2 (en) | NAND array comprising parallel transistor and two-terminal switching device | |
US9595325B2 (en) | Apparatus and methods for sensing hard bit and soft bits | |
US10120816B2 (en) | Bad column management with data shuffle in pipeline | |
US11295812B2 (en) | Memory devices and memory operational methods | |
US9312002B2 (en) | Methods for programming ReRAM devices | |
US9852090B2 (en) | Serial memory device alert of an external host to completion of an internally self-timed operation | |
US9471486B2 (en) | Reducing disturbances in memory cells | |
US9442663B2 (en) | Independent set/reset programming scheme | |
Liu et al. | A weighted sensing scheme for ReRAM-based cross-point memory array | |
CN113270123A (zh) | 存储器装置 | |
US10269444B2 (en) | Memory with bit line short circuit detection and masking of groups of bad bit lines | |
CN113707200B (zh) | 存储器及其读、写、擦除方法 | |
US20230186985A1 (en) | Technologies for dynamic current mirror biasing for memory cells | |
US20220366211A1 (en) | Dropout in neutral networks using threshold switching selectors in non-volatile memories | |
US10622065B2 (en) | Dedicated commands for memory operations | |
TW202341150A (zh) | 記憶體系統及記憶體陣列的操作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: California, USA Applicant after: Reza Design USA Address before: California, USA Applicant before: Dalog Semiconductor USA Inc. |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20230417 Address after: California, USA Applicant after: Dalog Semiconductor USA Inc. Address before: California, USA Applicant before: ADESTO TECHNOLOGIES Corp. Effective date of registration: 20230417 Address after: New York, United States Applicant after: Lattice chip (USA) integrated circuit technology Co.,Ltd. Address before: California, USA Applicant before: Reza Design USA |
|
GR01 | Patent grant | ||
GR01 | Patent grant |