CN113782629A - 晶体硅柔性光伏组件及其制备方法 - Google Patents
晶体硅柔性光伏组件及其制备方法 Download PDFInfo
- Publication number
- CN113782629A CN113782629A CN202111063571.6A CN202111063571A CN113782629A CN 113782629 A CN113782629 A CN 113782629A CN 202111063571 A CN202111063571 A CN 202111063571A CN 113782629 A CN113782629 A CN 113782629A
- Authority
- CN
- China
- Prior art keywords
- photovoltaic module
- crystalline silicon
- solar cell
- cell array
- flexible photovoltaic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 238000004806 packaging method and process Methods 0.000 claims abstract description 25
- 238000010030 laminating Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000003825 pressing Methods 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 8
- 229920002689 polyvinyl acetate Polymers 0.000 claims description 5
- 239000011118 polyvinyl acetate Substances 0.000 claims description 5
- 238000005452 bending Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000008393 encapsulating agent Substances 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000005022 packaging material Substances 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明涉及一种晶体硅柔性光伏组件及其制备方法,一种晶体硅柔性光伏组件,包括前板、背板、封装层和太阳能电池片阵列,太阳能电池片阵列的上、下表面均层压封装层,压封装层的外侧分别设置前板和背板,所述封装层与太阳能电池片阵列之间均设置离子性中间膜。该种晶体硅柔性光伏组件的制备方法,包括以下步骤:先将多块太阳能电池片串接并形成太阳能电池片阵列;然后由下而上依次叠放前板、封装层和离子性中间膜,再将太阳能电池片阵列放置在离子性中间膜上,放置离子性中间膜和封装层,最后放置背板;将层叠件放入层压机,在层压温度140‑150℃,真空时间6‑7分钟,真空后下压压力为‑10至‑30Kpa,延时700‑900秒,完成热层压工序。本发明具有较好的耐弯折性能。
Description
技术领域
本发明涉及一种光伏组件及其制备方法,属于光伏技术领域。
背景技术
现有传统晶体硅柔性太阳能光伏组件,使用透明聚合塑料薄膜为主的一类光伏组件,其中包括一透明的PET聚合物前板,以及PET聚合物背板,将太阳能电池片阵列以封装材料,如EVA,聚醋酸乙烯脂,经过热压合后封装完成。其优点为具备些许的可弯曲性且重量较轻,但缺点为具有较差的机械强度,在弯曲受力后,不像薄膜光伏组件具有可挠性,晶硅电池片硬脆的特性在受到弯曲受力后,造成组件内部的太阳能电池片隐裂、受损而永久性的造成输出功率降低。
发明内容
本发明的目的在于提供一种具有耐弯折性能的晶体硅柔性光伏组件及其制备方法。
为了达到上述目的,本发明的技术方案是:一种晶体硅柔性光伏组件,包括前板、背板、封装层和太阳能电池片阵列,太阳能电池片阵列的上、下表面均层压封装层,压封装层的外侧分别设置前板和背板,所述封装层与太阳能电池片阵列之间均设置离子性中间膜。
优选的,所述封装层为EVA或聚醋酸乙烯脂层。
优选的,所述前板为透明PET聚合物板。
优选的,所述背板为PET聚合物板。
采用上述结构后,在封装层与太阳能电池片阵列之间均设置离子性中间膜,在常温下离子性中间膜的形态为玻璃态,能与硅晶太阳能电池片充分熔合粘着,并提供高于单纯以传统封装材料如EVA,聚醋酸乙烯脂百倍以上的机械强度,在弯曲时离子性中间膜会同步与硅晶太阳能电池片受力弯曲,不会因两者弹性系数差异,而造成光伏组件弯曲时应力集中在弯曲的电池片上的情况,进而造成电池片裂片,提高耐弯折性能。
该种晶体硅柔性光伏组件的制备方法,包括以下步骤:
第一步:先将多块太阳能电池片串接并形成太阳能电池片阵列;
第二步:然后由下而上依次叠放前板、封装层和离子性中间膜,再将太阳能电池片阵列放置在离子性中间膜上,太阳能电池片阵列受光面朝下,放置离子性中间膜和封装层,最后放置背板;
第三步:将层叠件放入层压机,在层压温度140-150℃,真空时间6-7分钟,真空后下压压力为-10至-30Kpa,延时700-900秒,完成热层压工序;
第四步:取出组件,完成制作。
优选的,所述第三步中层压机的设定层压温度为145℃,真空时间6分钟,真空后下压压力为-20Kpa,延时800秒。
上述步骤中,可利用传统光伏生产设备,在相同的生产流程中即可完成。无需对设备进行升级改造。将离子性中间膜与封装层层压结合,并且包裹住太阳能电池片阵列,封装层提供较好的冲击缓冲,并且封装层与前板和背板均具有较好的粘着力,相比将离子性中间膜直接与前板和背板粘结,封装层提供较好的桥接作用。
附图说明
图1是本发明的结构爆炸图,
图2是现有结构爆炸图;
图3是现有结构的太阳能电池片开裂示意图。
具体实施方式
以下结合附图给出的实施例对本发明作进一步详细的说明。
实施例一,一种晶体硅柔性光伏组件,包括透明PET聚合物制成的前板2、PET聚合物板制成的背板3、EVA制成的封装层4和太阳能电池片阵列5,太阳能电池片阵列5的上、下表面均层压封装层4,封装层4的外侧分别设置前板2和背板3,封装层4与太阳能电池片阵列5之间均设置离子性中间膜7和7’。
离子性中间膜7和7’英文缩写为SGP,在传统的如图2基础上,在原有的封装层4与太阳能电池片阵列5之间均设置离子性中间膜7和7’其中离子性中间膜7’可视组件的使用情况与条件于以省略,如组件使用的环境中,不会产生背面冲击,则可省略离子性中间膜7’,只保留离子性中间膜7。
在晶体硅太阳能电池片上使用离子性中间膜7和7’的原因是:在常温下离子性中间膜7和7’的形态为玻璃态,能与硅晶太阳能电池片充分熔合粘着,并提供高于单纯以传统封装材料,如EVA,聚醋酸乙烯脂百倍以上的机械强度,在弯曲时离子性中间膜7和7’会同步与硅晶太阳能电池片受力弯曲,不会因两者弹性系数差异,而造成光伏组件弯曲时应力集中在弯曲的电池片上的情况,进而造成电池片裂片,如图3所示。
实施例一的一种晶体硅柔性光伏组件制备方法,包括以下步骤:
第一步:先将多块太阳能电池片串接并形成太阳能电池片阵列5;
第二步:然后由下而上依次叠放前板2、封装层4和离子性中间膜7,再将太阳能电池片阵列5放置在离子性中间膜7上,太阳能电池片阵列5受光面朝下,放置离子性中间膜7’和封装层4,最后放置背板3;
第三步:将层叠件放入层压机,在层压温度145℃,真空时间6分钟,真空后下压压力为-20Kpa,延时800秒,完成热层压工序;
第四步:取出组件,完成制作。
可利用传统光伏生产设备,在相同的生产流程中即可完成。无需对设备进行升级改造。
离子性中间膜7和7’上、下方的封装层4也是不可缺少的结构层。其原因为:由于离子性中间膜7和7’在常温与电池片熔合后形成玻璃态,其在受较大外力冲击时,会产生炸裂,而上、下方的封装层4提供了较好的对冲击缓冲;离子性中间膜7和7’与前板2及与背板3的粘着力较差,而封装层4可提供良好的粘着桥接离子性中间膜7和7’与前板2及背板3,形成耐候良好的稳定结构。
因此晶体硅光伏组件的优点是高转换效率,而薄膜光伏组件的优点是有较好的可挠性,透过本结构和工艺,可使晶体硅光伏组件兼具高转换效率与可挠性的优点。透过本结构和工艺,可提高晶体硅光伏组件可挠角度从传统的5-15度,提升至60度,而不产生晶体硅电池片的裂片。
Claims (6)
1.一种晶体硅柔性光伏组件,包括前板(2)、背板(3)、封装层(4)和太阳能电池片阵列(5),太阳能电池片阵列(5)的上、下表面均层压封装层(4),封装层(4)的外侧分别设置前板(2)和背板(3),其特征在于:所述封装层(4)与太阳能电池片阵列(5)之间均设置离子性中间膜(7)和(7’)。
2.根据权利要求1所述的晶体硅柔性光伏组件,其特征在于:所述封装层(4)为EVA或聚醋酸乙烯脂层。
3.根据权利要求1所述的晶体硅柔性光伏组件,其特征在于:所述前板(2)为透明PET聚合物板。
4.根据权利要求1所述的晶体硅柔性光伏组件,其特征在于:所述背板(3)为PET聚合物板。
5.一种晶体硅柔性光伏组件制备方法,其特征在于:包括以下步骤:
第一步:先将多块太阳能电池片串接并形成太阳能电池片阵列(5);
第二步:然后由下而上依次叠放前板(2)、封装层(4)和离子性中间膜(7),再将太阳能电池片阵列(5)放置在离子性中间膜(7)上,太阳能电池片阵列(5)受光面朝下,放置离子性中间膜(7’)和封装层(4),最后放置背板(3);
第三步:将层叠件放入层压机,在层压温度140-150℃,真空时间6-7分钟,真空后下压压力为-10至-30Kpa,延时700-900秒,完成热层压工序;
第四步:取出组件,完成制作。
6.根据权利要求5所述的晶体硅柔性光伏组件制备方法,其特征在于:所述第三步中层压机的设定层压温度为145℃,真空时间6分钟,真空后下压压力为-20Kpa,延时800秒。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111063571.6A CN113782629A (zh) | 2021-09-10 | 2021-09-10 | 晶体硅柔性光伏组件及其制备方法 |
PCT/IB2021/061563 WO2023037159A1 (en) | 2021-09-10 | 2021-12-10 | Flexible crystalline silicon photovoltaic module and manufacturing method therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111063571.6A CN113782629A (zh) | 2021-09-10 | 2021-09-10 | 晶体硅柔性光伏组件及其制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN113782629A true CN113782629A (zh) | 2021-12-10 |
Family
ID=78842721
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202111063571.6A Pending CN113782629A (zh) | 2021-09-10 | 2021-09-10 | 晶体硅柔性光伏组件及其制备方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN113782629A (zh) |
WO (1) | WO2023037159A1 (zh) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101162742A (zh) * | 2007-11-27 | 2008-04-16 | 上海耀华皮尔金顿玻璃股份有限公司 | 太阳能光伏夹层幕墙玻璃制作工艺 |
US20100108125A1 (en) * | 2008-06-02 | 2010-05-06 | E. I. Du Pont De Nemours And Company | Solar cell module having a low haze encapsulant layer |
CN204792832U (zh) * | 2015-06-05 | 2015-11-18 | 北京汉能光伏投资有限公司 | 一种柔性光伏组件 |
CN206194762U (zh) * | 2016-11-03 | 2017-05-24 | 新奥光伏能源有限公司 | 一种光伏组件 |
CN110970515A (zh) * | 2018-09-27 | 2020-04-07 | 汉能移动能源控股集团有限公司 | 一种太阳能发光组件和太阳能发光组件的封装方法 |
CN111564513A (zh) * | 2019-08-21 | 2020-08-21 | 沃沛斯(常州)能源科技有限公司 | 具备高机械强度的柔性光伏组件制备方法 |
CN113178500A (zh) * | 2021-04-14 | 2021-07-27 | 深圳市创益新材料有限公司 | 一种增强型轻质光伏组件及制造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6353042B1 (en) * | 1997-07-24 | 2002-03-05 | Evergreen Solar, Inc. | UV-light stabilization additive package for solar cell module and laminated glass applications |
JP2013229364A (ja) * | 2012-04-24 | 2013-11-07 | Toppan Printing Co Ltd | フレキシブル太陽電池向け封止フィルム |
JP2014165443A (ja) * | 2013-02-27 | 2014-09-08 | Toppan Printing Co Ltd | フレキシブル太陽電池モジュール |
-
2021
- 2021-09-10 CN CN202111063571.6A patent/CN113782629A/zh active Pending
- 2021-12-10 WO PCT/IB2021/061563 patent/WO2023037159A1/en active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101162742A (zh) * | 2007-11-27 | 2008-04-16 | 上海耀华皮尔金顿玻璃股份有限公司 | 太阳能光伏夹层幕墙玻璃制作工艺 |
US20100108125A1 (en) * | 2008-06-02 | 2010-05-06 | E. I. Du Pont De Nemours And Company | Solar cell module having a low haze encapsulant layer |
CN204792832U (zh) * | 2015-06-05 | 2015-11-18 | 北京汉能光伏投资有限公司 | 一种柔性光伏组件 |
CN206194762U (zh) * | 2016-11-03 | 2017-05-24 | 新奥光伏能源有限公司 | 一种光伏组件 |
CN110970515A (zh) * | 2018-09-27 | 2020-04-07 | 汉能移动能源控股集团有限公司 | 一种太阳能发光组件和太阳能发光组件的封装方法 |
CN111564513A (zh) * | 2019-08-21 | 2020-08-21 | 沃沛斯(常州)能源科技有限公司 | 具备高机械强度的柔性光伏组件制备方法 |
CN113178500A (zh) * | 2021-04-14 | 2021-07-27 | 深圳市创益新材料有限公司 | 一种增强型轻质光伏组件及制造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2023037159A1 (en) | 2023-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20090260675A1 (en) | Encapsulation of solar modules | |
CN105322039A (zh) | 超轻柔性晶体硅太阳电池组件及其制备方法 | |
JPWO2009011209A1 (ja) | 太陽電池モジュールの製造方法 | |
CN201303000Y (zh) | 一种基于薄膜太阳能电池的光电幕墙玻璃 | |
CN104966752A (zh) | 一种高发电量晶硅太阳能电池组件及其制作工艺 | |
CN102623553A (zh) | 一种太阳能电池组件的制备方法 | |
CN102544155A (zh) | 一种太阳能电池组件及制作方法 | |
CN101447519A (zh) | 层压型太阳能电池组件及其制备方法 | |
CN101588149A (zh) | 一种柔性可折叠太阳能移动电源及其制造方法 | |
CN201985134U (zh) | 具有高透光结构的太阳能电池组件 | |
CN108767058A (zh) | 一种太阳能电池组件及其封装方法 | |
CN113178501A (zh) | 一种柔性光伏组件及其制备方法 | |
CN106449798A (zh) | 一种双面进光晶硅光伏组件及其制造方法 | |
CN202103069U (zh) | 一种太阳能电池组件 | |
CN106711263A (zh) | 一种太阳能电池组件及制作方法 | |
CN113809193A (zh) | 一种曲面光伏组件及其制备方法 | |
CN101728460B (zh) | 用于太阳能手机电池组件的太阳能电池及其制备方法 | |
CN113782629A (zh) | 晶体硅柔性光伏组件及其制备方法 | |
CN109461781B (zh) | 一种卷绕式柔性薄膜太阳能组件 | |
CN204696131U (zh) | 一种高发电量晶硅太阳能电池组件 | |
CN207828166U (zh) | 光伏组件用定位胶带及具有该定位胶带的光伏组件 | |
CN109950349A (zh) | 一种双面发电光伏中空玻璃及制作方法 | |
CN106898668B (zh) | 太阳能电池板及其封装方法 | |
US20110214737A1 (en) | Method of manufacturing a solar cell and the solar cell manufactured by the same (as amended) | |
JP2002111014A (ja) | 太陽光発電プラスチックモジュール |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |