CN113774335A - Thin film deposition equipment, film coating method thereof and vacuum film coating machine - Google Patents
Thin film deposition equipment, film coating method thereof and vacuum film coating machine Download PDFInfo
- Publication number
- CN113774335A CN113774335A CN202111081911.8A CN202111081911A CN113774335A CN 113774335 A CN113774335 A CN 113774335A CN 202111081911 A CN202111081911 A CN 202111081911A CN 113774335 A CN113774335 A CN 113774335A
- Authority
- CN
- China
- Prior art keywords
- film deposition
- substrate
- magnetron sputtering
- thin film
- thermal evaporation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The application relates to a film deposition device, a film coating method thereof and a vacuum film coating machine, wherein the film deposition device comprises: the electron beam thermal evaporation system and the magnetron sputtering system are arranged in the vacuum chamber; the electron beam thermal evaporation system is arranged at the lower part of the workpiece disc, and the magnetron sputtering system is arranged at the upper part of the workpiece disc; the workpiece disc is used for placing the coated substrate; the electron beam thermal evaporation system is used for depositing a film on the lower surface of the substrate in a thermal evaporation mode; the magnetron sputtering system is used for performing thin film deposition on the upper surface of the substrate in a sputtering mode; in the coating process, the workpiece disc rotates the substrate, the electron beam thermal evaporation system performs film deposition on the lower surface of the substrate in a first vacuum state, and the magnetron sputtering system performs film deposition on the upper surface of the substrate in a second vacuum state; according to the technical scheme, the main film deposition process and the anti-reflection film process combined flow are respectively completed in one process, so that the film deposition process is simplified, and the film deposition efficiency is improved.
Description
Technical Field
The application relates to the technical field of vacuum coating machines, in particular to a film deposition device, a film coating method thereof and a vacuum coating machine.
Background
Vacuum coating techniques are generally classified into two main categories, namely Chemical Vapor Deposition (CVD) techniques and Physical Vapor Deposition (PVD) techniques, and the PVD techniques can be mainly classified into three categories: namely vacuum evaporation coating, vacuum sputtering coating, vacuum ion coating and the like; the corresponding deposition method comprises vacuum evaporation, sputtering coating, arc plasma coating, ion coating, molecular beam epitaxy and the like; the corresponding vacuum coating equipment comprises a vacuum evaporation coating machine, a vacuum sputtering coating machine, a vacuum ion coating machine and the like.
In the conventional film coating, a plurality of processes are required for coating a part of the substrate, for example, when a double-sided film deposition is required for the substrate, a main film deposition process and an antireflection film process are usually adopted, and when the film deposition is carried out, an electron gun evaporation system film deposition process and a magnetron sputtering film deposition process are generally adopted, wherein the electron gun evaporation is firstly carried out to carry out the film deposition on one surface of the substrate, after the film deposition on the surface is finished, a vacuum chamber is opened to turn over the substrate, and then the magnetron sputtering film deposition corresponding process is carried out to carry out the film deposition on the other surface of the substrate.
Therefore, according to the technical scheme of the film deposition, when the method is applied to a scene for double-sided film deposition, a plurality of processes are required, the operation is complex, and the efficiency is low.
Disclosure of Invention
In view of the above, it is necessary to provide a thin film deposition apparatus, a coating method thereof, and a vacuum coater for simplifying operations in double-sided thin film deposition and improving efficiency.
A thin film deposition apparatus, comprising: the electron beam thermal evaporation system and the magnetron sputtering system are arranged in the vacuum chamber; the electron beam thermal evaporation system is arranged at the lower part of the workpiece disc, and the magnetron sputtering system is arranged at the upper part of the workpiece disc;
the workpiece disc is used for placing the coated substrate;
the electron beam thermal evaporation system is used for carrying out thin film deposition on the lower surface of the substrate in a thermal evaporation mode;
the magnetron sputtering system is used for performing thin film deposition on the upper surface of the substrate in a sputtering mode;
in the coating process, the workpiece disc rotates the substrate, the electron beam thermal evaporation system performs film deposition on the lower surface of the substrate in a first vacuum state, and the magnetron sputtering system performs film deposition on the upper surface of the substrate in a second vacuum state.
In one embodiment, the magnetron sputtering system is mounted on an adjustable base;
the adjustable base is used for adjusting the angle and the distance between the magnetron sputtering system and the substrate so as to deposit films on the substrates in different shapes.
In one embodiment, the magnetron sputtering system is detachably mounted on the adjustable base, or the adjustable base is detachably mounted on the top of the vacuum chamber.
In one embodiment, the rotation of the workpiece disk includes single axis rotation, planetary rotation, or one-dimensional motion; the structure of the workpiece disc is a plane structure or a spherical structure.
In one embodiment, the electron beam thermal evaporation system comprises at least two electron guns and their corresponding crucibles; the electron gun is arranged at the bottom of the vacuum chamber, the crucibles are respectively used for storing different coating materials, and the electron gun is used for heating and evaporating the corresponding coating materials to deposit films.
In one embodiment, the thin film deposition apparatus further comprises a control system respectively connected to the workpiece tray, the electron beam thermal evaporation system, the magnetron sputtering system and/or the adjustable base;
the control system is used for controlling the workpiece disc to rotate, controlling the electron beam thermal evaporation system to deposit a film, controlling the magnetron sputtering system to deposit the film and/or controlling the adjustable base to adjust the angle.
A film coating method of a film deposition device is applied to the film deposition device and comprises the following steps:
pumping the vacuum chamber until reaching a first vacuum state;
controlling the electron beam thermal evaporation system to start, and performing thin film deposition on the lower surface of the substrate;
starting the workpiece disc to rotate the substrate;
after the deposition of the lower surface film is finished, closing the electron beam thermal evaporation system;
pumping the vacuum chamber until reaching a second vacuum state;
controlling the magnetron sputtering system to start, and depositing a film on the upper surface of the substrate;
and after the deposition of the film on the upper surface is finished, closing the magnetron sputtering system and controlling the workpiece disc to stop rotating.
In one embodiment, the electron beam thermal evaporation system is turned off after the lower surface first-stage thin film deposition stage is completed;
after the vacuum chamber reaches a second vacuum state, controlling the magnetron sputtering system to start, and performing first-stage film deposition on the upper surface of the substrate;
after the first-stage film coating is carried out on the upper surface, the magnetron sputtering system is closed, and the second-stage film deposition is continuously carried out on the lower surface;
and the like until the film deposition processes of all stages on the lower surface and the upper surface of the substrate are finished.
In one embodiment, the coating method of the thin film deposition apparatus further includes:
reading film thickness data detected by a crystal oscillator structure of a crystal oscillator film thickness control instrument when a lower surface film is deposited; the crystal oscillator structure is arranged on the workpiece disc;
and controlling the film deposition process according to the film thickness data.
In one embodiment, the controlling the start of the electron beam thermal evaporation system to perform the film deposition on the lower surface of the substrate includes:
controlling an electron gun A of the electron beam thermal evaporation system to start, and performing thin film deposition on the lower surface of the substrate by using the material A;
after the film deposition of the material A is finished on the lower surface, closing the electron gun A;
starting an electron gun B, and continuously performing thin film deposition on the lower surface of the substrate by using the material B;
after the film deposition of the material B on the lower surface is finished, closing the electron gun B;
and repeating the steps until the selected coating material is coated.
In one embodiment, the controlling the magnetron sputtering system to start up to deposit a thin film on the upper surface of the substrate includes:
controlling the magnetron sputtering system a and the magnetron sputtering system b to start, and respectively carrying out thin film deposition on the upper surface of the substrate by using the target material a and the target material b;
and closing the magnetron sputtering system after the film deposition is finished on the upper surface of the substrate by utilizing various targets.
A vacuum coating machine comprises: a vacuum chamber, a workpiece tray, and the above-mentioned thin film deposition apparatus.
According to the film deposition equipment, the film coating method and the vacuum film coating machine, the electron beam thermal evaporation system and the magnetron sputtering system are arranged in the vacuum chamber, and the thermal evaporation mode and the sputtering mode are respectively adopted to sequentially perform film deposition on the lower surface and the upper surface of the substrate; the technical scheme fully utilizes the technical advantages of high speed and high yield of electron thermal evaporation and good magnetron sputtering stability, and the main film deposition process and the anti-reflection film process combined flow are respectively completed in one process in a double-sided film deposition scene, so that the film deposition process is simplified, and the film deposition efficiency is improved.
Drawings
FIG. 1 is a schematic view of a thin film deposition apparatus in a state where a thin film is deposited on a lower surface;
FIG. 2 is a schematic view of a thin film deposition apparatus in a state where a thin film is deposited on an upper surface;
FIG. 3 is a schematic view of an adjustable base mounting;
FIG. 4 is a schematic view of the angular and distance adjustment of the adjustable base;
FIG. 5 is a schematic structural view of a thin film deposition apparatus according to an embodiment;
FIG. 6 is a schematic view of an electrical structure of the thin film deposition apparatus;
FIG. 7 is a flowchart of a coating method of the thin film deposition apparatus according to the embodiment;
FIG. 8 is a flowchart of a coating method of a thin film deposition apparatus according to another embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
Referring to fig. 1 and 2, fig. 1 is a schematic view of a thin film deposition apparatus in a state where a thin film is deposited on a lower surface, and fig. 2 is a schematic view of the thin film deposition apparatus in a state where a thin film is deposited on an upper surface; as shown in fig. 1 and 2, the thin film deposition apparatus of the embodiment of the present application may include: at least one electron beam thermal evaporation system and at least one magnetron sputtering system which are arranged in the vacuum chamber; the electron beam thermal evaporation system is arranged at the lower part of the workpiece disc, and the magnetron sputtering system is arranged at the upper part of the workpiece disc; generally, the electron beam thermal evaporation system is arranged at the bottom of the vacuum chamber and mainly comprises an electron gun and a crucible for storing coating materials, wherein the electron gun is used for evaporating the materials in the crucible, and one or more electron beam thermal evaporation systems can be arranged; the magnetron sputtering system can be arranged at the top of the vacuum chamber and mainly comprises a magnetron sputtering cathode, a target material and the like, one or more magnetron sputtering systems can be arranged, in the example shown in the figure, two magnetron sputtering systems can be arranged, and different two target materials are respectively used for film deposition.
In the apparatus, a workpiece tray on which substrates to be coated are mounted is used to place the substrates, and the workpiece tray is rotated during film deposition so that the substrates can be uniformly subjected to film deposition. The electron beam thermal evaporation system is used for carrying out thin film deposition on the lower surface of the substrate in a thermal evaporation mode; the magnetron sputtering system is used for performing thin film deposition on the upper surface of the substrate in a sputtering mode.
In the film coating process, performing electron thermal evaporation film deposition, controlling a vacuumizing device to place a vacuum chamber in a first vacuum state, performing film deposition on the lower surface of a substrate by an electron beam thermal evaporation system in the first vacuum state, detecting film thickness data of the film by using a crystal vibration film thickness controller in the film coating process, and controlling the film deposition process according to the film thickness data; after the film coating on the lower surface of the substrate is finished, entering a magnetron sputtering film deposition process on the upper surface of the substrate, controlling the vacuum pumping equipment to place the vacuum chamber in a second vacuum state, and performing film deposition on the upper surface of the substrate by a magnetron sputtering system in the second vacuum state; in the film deposition process, the workpiece disc rotates the substrate, the first vacuum state is the vacuum degree suitable for the film deposition of the electron beam thermal evaporation system, and the second vacuum state is the vacuum degree suitable for the film deposition of the magnetron sputtering system.
As described in the foregoing embodiment, the film deposition apparatus according to the embodiment of the present application, by disposing the electron beam thermal evaporation system and the magnetron sputtering system in the vacuum chamber, and sequentially performing film deposition on the lower surface and the upper surface of the substrate by respectively adopting the thermal evaporation method and the sputtering method, fully utilizes the technical advantages of fast speed, high yield and high efficiency of the electronic thermal evaporation, is suitable for a process with a complex film structure, and fully utilizes the technical advantages of good stability and good control effect of the magnetron sputtering, and is suitable for a process with a simple film structure; by combining the advantages of the thermal evaporation system and the magnetron sputtering system, the main film deposition process and the combined process of the antireflection film process are respectively completed in one process in the scene of double-sided film deposition, so that the film deposition process is simplified, and the film deposition efficiency is improved.
In order to make the technical solutions of the present application clearer, several embodiments are described below with reference to the accompanying drawings.
In one embodiment, the magnetron sputtering system may be mounted on an adjustable base; the adjustable base is used for adjusting the angle and the distance between the magnetron sputtering system and the substrate so as to deposit films on the substrates in different shapes.
Referring to FIG. 3, FIG. 3 is a schematic view of the adjustable base mounting; as shown, the adjustable base can be fixed to the top of the vacuum chamber, as shown in fig. 4, fig. 4 is a schematic view of the angle and distance adjustment of the adjustable base; the adjustable base can adjust the distance in the direction of the workpiece disk to be close to or far away from the substrate, and simultaneously can adjust the film deposition angle according to the shape of the substrate so as to realize better film deposition process. Preferably, as an embodiment, the magnetron sputtering system of the thin film deposition device can be detachably mounted; the magnetron sputtering system can be detachably arranged on the adjustable base, or the adjustable base is detachably arranged on the top of the vacuum chamber; through the detachable mode, when the device is not needed to be used, the device can be detached and used on other devices, so that the use cost is reduced, and the device utilization rate is improved.
In one embodiment, the workpiece disk may rotate in a single-axis rotation manner, a planetary rotation manner, a one-dimensional motion manner, and the like, and the structure of the workpiece disk may be a planar structure or a spherical structure, and the like.
In one embodiment, the thin film deposition apparatus further comprises a crystal vibration film thickness controller; the crystal oscillation film thickness control instrument comprises a crystal oscillation structure arranged on the workpiece disc; the crystal oscillator film thickness control instrument is used for reading film thickness data detected by the crystal oscillator structure during the deposition of the lower surface film and controlling the film deposition process according to the film thickness data.
In an embodiment, referring to fig. 5, fig. 5 is a schematic structural diagram of a thin film deposition apparatus according to an embodiment, an electron beam thermal evaporation system may include at least two electron guns and their corresponding crucibles, for example, 2 electron guns in fig. 5; as shown in the figure, an electron gun a and an electron gun B are arranged at the bottom of the vacuum chamber, the corresponding crucible a and crucible B are used for storing different coating materials (material a and material B), and the electron gun a and the electron gun B are used for heating and evaporating the corresponding material a and material B to deposit films. Meanwhile, the magnetron sputtering system can also adopt a plurality of different targets a, b, c … … and the like, and as shown in the figure, the number of the magnetron sputtering systems can comprise a magnetron sputtering system a and a magnetron sputtering system b, so that the thin film deposition of the target a and the target b can be respectively carried out.
According to the scheme of the embodiment, in the coating process, the film deposition of different coating materials can be respectively carried out on the lower surface of the substrate by utilizing the plurality of electron guns according to different requirements of the substrate coating, and the film deposition can also be carried out on the upper surface of the substrate by utilizing different targets, so that a better coating effect can be achieved.
Referring to fig. 6, fig. 6 is an electrical schematic diagram of a thin film deposition apparatus, the thin film deposition apparatus controls each component through a control system, as shown in the figure, the control system is respectively connected to a workpiece tray, an electron beam thermal evaporation system, a magnetron sputtering system, an adjustable base, a crystal vibration film thickness controller, and the like; the control system is used for controlling the workpiece disc to rotate, receiving film thickness data detected by the crystal vibration film thickness controller, controlling the electron beam thermal evaporation system to deposit a film, controlling the magnetron sputtering system to deposit the film, and controlling the adjustable base to adjust the angle in the film coating process so as to coat the substrates in different shapes.
The following describes an embodiment of a coating method of a thin film deposition apparatus, and the method of this embodiment may be applied to the thin film deposition apparatus of the above embodiment, for example, may be applied to a control system for controlling a thin film deposition process of the thin film deposition apparatus,
referring to fig. 7, fig. 7 is a flowchart of a coating method of a thin film deposition apparatus according to an embodiment, including the steps of:
before the start of plating, preparation work, mounting of a substrate, and the like are performed.
s101, exhausting the vacuum chamber until reaching a first vacuum state; specifically, after the film coating is started, an instruction is sent to the vacuum pump to start air suction until the vacuum degree suitable for the work of the electron beam thermal evaporation system is reached.
s102, controlling the electron beam thermal evaporation system to start, and depositing a thin film on the lower surface of the substrate; specifically, an instruction is sent to an electron gun of the electron beam thermal evaporation system to start heating the evaporation material for film deposition. And further, reading film thickness data detected by a crystal oscillator structure of a crystal oscillation film thickness controller arranged on the workpiece disc, and controlling the film deposition process according to the film thickness data.
s103, starting the workpiece disc to rotate the substrate; specifically, during the coating process, the workpiece tray is held to rotate the substrate.
s104, after the deposition of the lower surface film is finished, closing the electron beam thermal evaporation system; specifically, after the deposition of the lower surface film is finished, the electron beam thermal evaporation system is closed, and after the conditions are met, the magnetron sputtering film deposition process is started.
s105, exhausting the vacuum chamber until reaching a second vacuum state; specifically, after the electron beam thermal evaporation system is coated, the vacuum chamber needs to be adjusted to a vacuum degree suitable for the magnetron sputtering system.
s106, controlling the magnetron sputtering system a and the magnetron sputtering system b to start, and depositing a film on the upper surface of the substrate; specifically, an instruction is sent to the magnetron sputtering system a or the magnetron sputtering system b, the magnetron sputtering system a and the magnetron sputtering system b are controlled to start film deposition, and the magnetron sputtering system a and the magnetron sputtering system b can be controlled to alternately perform or simultaneously perform.
s107, after the deposition of the film on the upper surface is finished, closing the magnetron sputtering system, and controlling the workpiece disc to stop rotating; specifically, after the upper surface is coated with the film, the magnetron sputtering system is closed, the workpiece disc stops rotating, the vacuumizing is stopped, the whole coating process is completed, and the vacuum chamber door can be opened to take out the substrate.
According to the method of the embodiment, the film deposition process of the upper surface and the lower surface of the substrate is finished by setting the film deposition process as one process, the electron beam thermal evaporation system and the magnetron sputtering system are sequentially used for film deposition, the process with a complex film structure is executed by fully utilizing the technical advantages of high speed, high yield and high efficiency of electron thermal evaporation, and the process with a simple film structure is executed by fully utilizing the technical advantages of good stability and good control effect of magnetron sputtering; therefore, in the scene of double-sided film deposition, the film deposition process is greatly simplified, and the film deposition efficiency is improved.
In order to further improve the film deposition effect and efficiency of the film coating method of the film deposition apparatus of the present application, the embodiment further provides a scheme for alternately performing film deposition, so as to adapt to a special film deposition process.
In one embodiment, the electron beam thermal evaporation system is turned off after the lower surface first-stage thin film deposition stage is completed; after the vacuum chamber reaches a second vacuum state, controlling the magnetron sputtering system a and the magnetron sputtering system b to start, and performing first-stage film deposition on the upper surface of the substrate; after the first-stage film coating is carried out on the upper surface, the magnetron sputtering system is closed, and the second-stage film deposition is continuously carried out on the lower surface; and analogizing in turn, respectively carrying out the film deposition processes of the second stage, the third stage, … … and the like until the film deposition process of each stage on the lower surface of the substrate is completed and the film deposition process of each stage on the upper surface of the substrate is completed.
The technical scheme of the embodiment can be applied to the film deposition process under special process conditions, and the film deposition is carried out through the alternation of the upper surface and the lower surface, so that a better film coating effect can be obtained.
Referring to fig. 8, fig. 8 is a flowchart of a coating method of a thin film deposition apparatus according to another embodiment, including the steps of:
and s201, exhausting the vacuum chamber until the first vacuum state is achieved.
And s202, controlling the electron gun A of the electron beam thermal evaporation system to start, and performing thin film deposition on the lower surface of the substrate by using the material A.
And s203, starting the workpiece disc to rotate the substrate.
And s204, after the thin film deposition of the material A on the lower surface is finished, closing the electron gun A.
And s205, starting the electron gun B, and continuing to perform thin film deposition on the lower surface of the substrate by using the material B.
And s206, after the thin film deposition of the material B on the lower surface is finished, closing the electron gun B.
And s207, exhausting the vacuum chamber until a second vacuum state is achieved.
And s208, sequentially controlling the magnetron sputtering system a and the magnetron sputtering system b to start, and sequentially utilizing the targets a and b … … to perform thin film deposition on the upper surface of the substrate.
And s209, after the deposition of the film on the upper surface of the substrate by using various targets is finished, closing the magnetron sputtering system and controlling the workpiece disc to stop rotating.
Specifically, after the above processes are completed, the vacuum chamber door may be opened to take out the substrate, and it should be noted that the above embodiment exemplifies the technical scheme of two electron guns, and in practical application, more electron guns may be arranged according to the requirements, and the working process is not described in detail.
According to the technical scheme of the embodiment, the film deposition of different materials can be performed by utilizing the plurality of electron guns, and the magnetron sputtering can be used for coating films by using different targets, so that the method can be suitable for the film deposition of different processes, and the film deposition effect is improved.
An example of a vacuum coater is set forth below.
The present application provides a vacuum coating machine, the structure of which can be shown in fig. 1-6, and which can include a vacuum chamber, a workpiece tray, and the thin film deposition apparatus of the above-mentioned embodiment, etc.
According to the vacuum coating machine, the advantages of the thermal evaporation system and the magnetron sputtering system are combined through the film deposition equipment of the embodiment, and the main film deposition process and the anti-reflection film process combined flow are respectively completed in one process in a double-sided film deposition scene, so that the film deposition process is simplified, and the film deposition efficiency is improved.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A thin film deposition apparatus, comprising: the electron beam thermal evaporation system and the magnetron sputtering system are arranged in the vacuum chamber; the electron beam thermal evaporation system is arranged at the lower part of the workpiece disc, and the magnetron sputtering system is arranged at the upper part of the workpiece disc;
the workpiece disc is used for placing the coated substrate;
the electron beam thermal evaporation system is used for carrying out thin film deposition on the lower surface of the substrate in a thermal evaporation mode;
the magnetron sputtering system is used for performing thin film deposition on the upper surface of the substrate in a sputtering mode;
in the coating process, the workpiece disc rotates the substrate, the electron beam thermal evaporation system performs film deposition on the lower surface of the substrate in a first vacuum state, and the magnetron sputtering system performs film deposition on the upper surface of the substrate in a second vacuum state.
2. The thin film deposition apparatus of claim 1, wherein the magnetron sputtering system is mounted on an adjustable base;
the adjustable base is used for adjusting the angle and the distance between the magnetron sputtering system and the substrate so as to deposit films on the substrates in different shapes.
3. The thin film deposition apparatus of claim 3, wherein the magnetron sputtering system is detachably mounted on the adjustable base, or the adjustable base is detachably mounted on the top of the vacuum chamber.
4. The thin film deposition apparatus according to claim 1, wherein the rotation manner of the workpiece disk includes uniaxial rotation, planetary rotation, or one-dimensional motion; the structure of the workpiece disc is a plane structure or a spherical structure.
5. The thin film deposition apparatus of claim 1, wherein the electron beam thermal evaporation system comprises one or more electron guns and their corresponding crucibles; the electron gun is arranged at the bottom of the vacuum chamber, the crucibles are respectively used for storing different coating materials, and the electron gun is used for heating and evaporating the corresponding coating materials to deposit films.
6. The thin film deposition apparatus of any one of claims 1 to 5, further comprising a control system connected to the workpiece tray, the electron beam thermal evaporation system, the magnetron sputtering system, and/or the adjustable base, respectively;
the control system is used for controlling the workpiece disc to rotate, controlling the electron beam thermal evaporation system to deposit a film, controlling the magnetron sputtering system to deposit the film and/or controlling the adjustable base to adjust the angle.
7. A coating method of a thin film deposition apparatus applied to the thin film deposition apparatus according to any one of claims 1 to 6, comprising:
pumping the vacuum chamber until reaching a first vacuum state;
controlling the electron beam thermal evaporation system to start, and performing thin film deposition on the lower surface of the substrate;
starting the workpiece disc to rotate the substrate;
after the deposition of the lower surface film is finished, closing the electron beam thermal evaporation system;
pumping the vacuum chamber until reaching a second vacuum state;
controlling the magnetron sputtering system to start, and depositing a film on the upper surface of the substrate;
and after the deposition of the film on the upper surface is finished, closing the magnetron sputtering system and controlling the workpiece disc to stop rotating.
8. The plating method of a thin film deposition apparatus according to claim 7, wherein the electron beam thermal evaporation system is turned off after the lower surface first-stage thin film deposition section is completed;
after the vacuum chamber reaches a second vacuum state, controlling the magnetron sputtering system to start, and performing first-stage film deposition on the upper surface of the substrate;
after the first-stage film coating is carried out on the upper surface, the magnetron sputtering system is closed, and the second-stage film deposition is continuously carried out on the lower surface;
and the like until the film deposition processes of all stages on the lower surface and the upper surface of the substrate are finished.
9. The coating method of the thin film deposition apparatus according to claim 7, wherein the controlling of the electron beam thermal evaporation system to be activated for performing the thin film deposition on the lower surface of the substrate comprises:
controlling an electron gun A of the electron beam thermal evaporation system to start, and performing thin film deposition on the lower surface of the substrate by using the material A;
after the film deposition of the material A is finished on the lower surface, closing the electron gun A;
starting an electron gun B, and continuously performing thin film deposition on the lower surface of the substrate by using the material B;
after the film deposition of the material B on the lower surface is finished, closing the electron gun B;
repeating the steps until the selected coating material is coated;
the control of the starting of the magnetron sputtering system to carry out the film deposition on the upper surface of the substrate comprises the following steps:
controlling the magnetron sputtering system a and the magnetron sputtering system b to start, and respectively carrying out thin film deposition on the upper surface of the substrate by using the target material a and the target material b;
and closing the magnetron sputtering system after the film deposition is finished on the upper surface of the substrate by utilizing various targets.
10. A vacuum coating machine is characterized by comprising: a vacuum chamber, a workpiece tray, and the thin film deposition apparatus as claimed in any one of claims 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111081911.8A CN113774335A (en) | 2021-09-15 | 2021-09-15 | Thin film deposition equipment, film coating method thereof and vacuum film coating machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111081911.8A CN113774335A (en) | 2021-09-15 | 2021-09-15 | Thin film deposition equipment, film coating method thereof and vacuum film coating machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113774335A true CN113774335A (en) | 2021-12-10 |
Family
ID=78844061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111081911.8A Pending CN113774335A (en) | 2021-09-15 | 2021-09-15 | Thin film deposition equipment, film coating method thereof and vacuum film coating machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113774335A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204714886U (en) * | 2015-06-10 | 2015-10-21 | 光驰科技(上海)有限公司 | Two-way deposition plating apparatus |
| CN108342699A (en) * | 2018-02-11 | 2018-07-31 | 中国科学院上海光学精密机械研究所 | Comprehensive deposition filming equipment and comprehensive film plating process |
-
2021
- 2021-09-15 CN CN202111081911.8A patent/CN113774335A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204714886U (en) * | 2015-06-10 | 2015-10-21 | 光驰科技(上海)有限公司 | Two-way deposition plating apparatus |
| CN108342699A (en) * | 2018-02-11 | 2018-07-31 | 中国科学院上海光学精密机械研究所 | Comprehensive deposition filming equipment and comprehensive film plating process |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5993974B2 (en) | Method and coater for coating a substrate | |
| CN100392147C (en) | Pair target twin magnetic controlled sputtering ion plating deposition device | |
| EP2223328A1 (en) | A method of magnetron sputtering and a method for determining a power modulation compensation function for a power supply applied to a magnetron sputtering source | |
| JP2009041040A (en) | Vacuum vapor deposition method and vacuum vapor deposition apparatus | |
| WO2018236881A1 (en) | Functionally integrated coating structures | |
| CN112159967A (en) | Ion beam deposition equipment for infrared metal film and film deposition method | |
| CN113774335A (en) | Thin film deposition equipment, film coating method thereof and vacuum film coating machine | |
| KR102138598B1 (en) | Film formation method and sputtering device | |
| CN109763107A (en) | It is a kind of to be used to prepare metal-macromolecule multi-layer compound film vacuum coating system | |
| CN206706198U (en) | Magnetic control sputtering device and magnetron sputtering apparatus | |
| WO2024045748A1 (en) | Thin film deposition apparatus and thin film deposition method | |
| CN109983150A (en) | Device and method for the sedimentary on substrate | |
| CN2399400Y (en) | Ion beam sputtering film coating machine | |
| JP2017110282A (en) | Piezoelectric substrate vapor-deposition method, and vacuum evaporation system | |
| CN106191779A (en) | A kind of polymer vacuum electron beam evaporation coating machine | |
| JP5002532B2 (en) | Sputtering method and sputtering apparatus | |
| CN106939409A (en) | A kind of device and method of multi-ion source sputtering production film | |
| TWI739243B (en) | Film forming method | |
| CN209227052U (en) | Equipment for carrying out layer deposition on substrate | |
| US20160273096A1 (en) | Shutter system | |
| EP1829209A1 (en) | Thin film acoustic reflector stack | |
| JP2001115259A (en) | Magnetron sputtering system | |
| CN104962873A (en) | Method for preparing polycrystalline aluminum oxide hard coating | |
| CN117127152A (en) | Electron beam evaporation coating equipment and evaporation coating method | |
| CN117107202A (en) | Magnetron sputtering coating equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |