CN113764968A - Method for removing epitaxial wafer substrate - Google Patents
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- CN113764968A CN113764968A CN202111046426.7A CN202111046426A CN113764968A CN 113764968 A CN113764968 A CN 113764968A CN 202111046426 A CN202111046426 A CN 202111046426A CN 113764968 A CN113764968 A CN 113764968A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0217—Removal of the substrate
Abstract
The invention discloses a method for completely removing an epitaxial wafer substrate, wherein an epitaxial wafer sequentially comprises the substrate, an etching stop layer and an epitaxial layer from bottom to top, and the method comprises the following manufacturing steps: cutting the substrate of the epitaxial wafer to obtain the epitaxial wafer of the ultrathin substrate; bonding an epitaxial layer of an epitaxial wafer of the ultrathin substrate with the temporary sacrificial wafer to obtain a bonded epitaxial wafer; corroding the bonded epitaxial wafer by using a corrosive liquid until the epitaxial layer is exposed to obtain the bonded epitaxial wafer with the exposed epitaxial layer; and debonding the bonded epitaxial wafer with the exposed epitaxial layer, and separating the epitaxial layer and the temporary sacrificial wafer. The invention can completely remove the substrate of the high-power semiconductor light-emitting device, reduce the heat dissipation of the device and improve the heat dissipation capability, thereby increasing the output power and the power conversion efficiency of the device.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for removing an epitaxial wafer substrate.
Background
In a conventional semiconductor light emitting device, electric energy is not completely converted into light energy during operation, and part of the energy is dissipated in other forms. For a normally-installed high-power light-emitting device, heat is mainly conducted downwards through the substrate, and due to the fact that the substrate is too thick and poor in heat conductivity, the power conversion efficiency of the device is reduced, the output characteristics of the device are affected, and even the device can be failed in a severe case.
Taking a top-emitting vertical cavity surface emitting laser as an example, a distributed bragg reflector is mostly adopted as an upper reflector and a lower reflector in the structure, because the resonance of the laser needs high reflectivity (more than 99.5%), the number of pairs of the distributed bragg reflectors is large, and the resistances of the upper reflector and the lower reflector are large, the problem of joule heat inside the device is serious, and meanwhile, the excessively thick bottom reflector and a back substrate cause the poor heat dissipation capability of the laser, and the improvement of the output power of a high-power top-emitting vertical cavity surface emitting laser array is seriously limited.
Disclosure of Invention
In view of the above, the main object of the present invention is to provide a method for removing an epitaxial wafer substrate, so as to partially solve at least one of the above-mentioned technical problems.
In order to achieve the above object, as one aspect of the present invention, there is provided a method of removing an epitaxial wafer substrate, the epitaxial wafer comprising, in order from bottom to top, a substrate, an etch stop layer, an epitaxial layer, the method comprising: the method comprises the steps of cutting a substrate of an epitaxial wafer to obtain an epitaxial wafer of an ultrathin substrate, bonding the epitaxial layer of the epitaxial wafer of the ultrathin substrate with a temporary sacrificial wafer to obtain a bonded epitaxial wafer, corroding the substrate of the bonded epitaxial wafer by using corrosive liquid until the epitaxial layer is exposed to obtain a bonded epitaxial wafer of the exposed epitaxial layer, performing debonding on the bonded epitaxial wafer of the exposed epitaxial layer, and separating the epitaxial layer and the temporary sacrificial wafer.
According to the embodiment of the invention, etching the bonded epitaxial wafer by using the etching solution until the epitaxial layer is exposed to obtain the bonded epitaxial wafer with the exposed epitaxial layer comprises the following steps: etching the bonded epitaxial wafer by using a first etching solution until the etching stop layer is exposed; and corroding the corrosion stop layer by using a second corrosive liquid until the epitaxial layer is exposed, thereby obtaining the bonded epitaxial wafer with the exposed epitaxial layer.
According to an embodiment of the present invention, bonding an epitaxial layer of an epitaxial wafer of an ultra-thin substrate to a temporary sacrificial wafer, the obtaining of a bonded epitaxial wafer comprises: dividing an adhesion area and a release area on an epitaxial layer of an epitaxial wafer of the ultrathin substrate, wherein the adhesion area is positioned at the periphery of the release area; spin-coating a first adhesive on the adhesive area, and drying; spin-coating a second adhesive on the release area to obtain an epitaxial wafer to be bonded, wherein the viscosity of the first adhesive is greater than that of the second adhesive; and bonding the epitaxial layer of the epitaxial wafer to be bonded with the temporary sacrificial wafer.
According to an embodiment of the invention, the central axis of the adhesion zone coincides with the central axis of the release zone.
According to an embodiment of the present invention, the spin coating conditions of the first adhesive include: the spin coating speed is 800-: the drying temperature is 120-: the spin coating speed is 1000-1500rpm, and the spin coating time is 20-30 s.
According to an embodiment of the invention, debonding the bonded epitaxial wafer exposing the epitaxial layer, the separating the epitaxial layer and the temporary sacrificial sheet comprises: the first adhesive coated on the adhesion area is detackified by using the first detackifier, and a second adhesive between the epitaxial layer and the temporary sacrificial sheet is exposed; and (4) debonding the second adhesive coated on the release area by using the second debonding agent, and separating the epitaxial layer and the temporary sacrificial sheet.
According to the embodiment of the invention, before bonding the epitaxial layer of the epitaxial wafer of the ultrathin substrate and the temporary sacrificial wafer, the method further comprises the following steps: and cleaning the epitaxial wafer and the temporary sacrificial wafer of the ultrathin substrate.
According to the embodiment of the invention, the bonding conditions in bonding the epitaxial layer of the epitaxial wafer of the ultrathin substrate and the temporary sacrificial wafer comprise the following steps: the bonding temperature is 180 ℃ and 300 ℃, the bonding pressure is 0.5-1.5MPa, and the bonding time is 30-60 min.
According to the embodiment of the invention, before cutting the substrate of the epitaxial wafer, the method further comprises the following steps: placing the epitaxial wafer in a simulation graph on a placing platform, and embedding one side of a substrate of the epitaxial wafer into the simulation graph; nesting and overlapping the support frame fixed with the single-sided film and the placing platform to enable the support frame to be adhered to the epitaxial layer of the epitaxial wafer; and fixing the support frame adhered with the epitaxial wafer on a micropore sucking disc of the cutting machine tool.
According to an embodiment of the present invention, the substrate of the epitaxial wafer of the ultra-thin substrate has a thickness of 30-50 μm.
According to the technical scheme, the method for removing the epitaxial wafer substrate has one or part of the following beneficial effects:
(1) the method adopts a two-step removing method, namely, firstly, mechanically cutting the substrate of the epitaxial wafer to obtain the epitaxial wafer of the ultrathin substrate, and bonding the epitaxial wafer of the ultrathin substrate with the temporary sacrificial wafer; and etching the bonded epitaxial wafer by using the etching solution. The method can completely remove the substrate of the device, reduce the heat dissipation of the device, and improve the heat dissipation capability, thereby increasing the output power and the power conversion efficiency of the device.
(2) The temporary bonding process adopts the partitioned gluing technology, and different areas of the epitaxial wafer are glued to form the adhesion area and the release area, so that the difficulty of the temporary bonding process is reduced, and the subsequent bonding removal process is convenient to carry out.
Drawings
FIG. 1 is a flow chart of a method of the present invention for completely removing an epitaxial wafer substrate;
FIG. 2 is a flow chart of the temporary bonding and wet selective etching process of the present invention;
FIG. 3 is a schematic view of the cutting principle of the present invention;
fig. 4A is a schematic view of the pasting of an epitaxial wafer according to the present invention;
fig. 4B is a schematic view of a bonded epitaxial wafer of the present invention.
[ description of reference ]
1-a first adhesive; 2-a second adhesive;
305-epitaxial wafer of ultra-thin substrate;
3-an epitaxial layer; 4-an etch stop layer;
5-epitaxial wafer substrate of ultra-thin substrate;
6-temporary sacrificial sheet;
301-a support frame; 302-an epitaxial wafer;
303-simulating a graphic; 304-placing the platform.
Detailed Description
The invention provides a method for removing an epitaxial wafer substrate, which aims at the existing high-power semiconductor light-emitting device and is used for solving the problems of serious joule heat generation, poor heat dissipation capability and the like of the high-power semiconductor light-emitting device. The invention discloses a method for completely removing an epitaxial wafer substrate, which adopts a cutting and corrosion method to gradually remove the substrate of the epitaxial wafer, can completely remove the substrate of the epitaxial wafer, not only reduces the joule heat generated by over-thick substrate and over-high resistance, but also can reduce the heat dissipation of a device, improve the heat dissipation capacity of the device and increase the output power and the power conversion efficiency of the device.
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
Fig. 1 is a flow chart of a method of completely removing an epitaxial wafer substrate. As shown in fig. 1, there is provided a method for removing an epitaxial wafer substrate, the epitaxial wafer comprising a substrate, an etch stop layer, an epitaxial layer in sequence from bottom to top, the method comprising: steps S101-S104.
And step S101, cutting the substrate of the epitaxial wafer through an ultra-precision mechanical thinning process to obtain the epitaxial wafer of the ultrathin substrate.
And S102, bonding an epitaxial layer of the epitaxial wafer of the ultrathin substrate with the temporary sacrificial wafer through a partition gluing process to obtain a bonded epitaxial wafer.
And S103, etching the bonded epitaxial wafer by using a wet selective etching process, and etching the substrate and the etching stop layer of the bonded epitaxial wafer by using etching liquid respectively to obtain the bonded epitaxial wafer with the exposed epitaxial layer.
And step S104, performing debonding on the bonded epitaxial wafer with the exposed epitaxial layer, and separating the epitaxial layer and the temporary sacrificial wafer.
In the step S101, the substrate of the epitaxial wafer is thinned by using the ultra-precision mechanical thinning apparatus, which has the advantages of simple operation, less pollution, good surface roughness, and the like. The material system of the epitaxial wafer includes but is not limited to one of GaAs, AlGaAs, InP. The thickness of the substrate of the epitaxial wafer of the ultrathin substrate is 30-50 μm.
In step S103, the bonded epitaxial wafer is etched by using the etching solution until the epitaxial layer is exposed, so as to obtain an epitaxial wafer with the exposed epitaxial layer. Wherein, the etching step is divided into two steps:
and etching the substrate bonded with the epitaxial wafer by using the first chemically selective etching solution until the etching stop layer is completely exposed, and cleaning the epitaxial wafer.
And etching the etch stop layer of the bonded epitaxial wafer by using a second chemical selective etching solution until the epitaxial layer is completely exposed, and cleaning and drying the etched epitaxial layer.
In step S104, the debonding of the epitaxial wafer with the exposed epitaxial layer includes:
and (3) debonding the first adhesive coated on the adhesion area by using the first debonding agent to expose the second adhesive between the epitaxial layer and the temporary sacrificial sheet. The first debonding agent is only capable of debonding the first adhesive applied to the adhesion zone.
And (4) debonding the second adhesive coated on the release area by using a second debonding agent, and separating the epitaxial layer and the temporary sacrificial sheet. The second debonder is only capable of debonding the second adhesive applied to the release zone.
According to the embodiment of the invention, before cutting the substrate of the epitaxial wafer, the method further comprises the following steps: the epitaxial wafer is placed in a simulation graph on a placing platform, one side of a substrate of the epitaxial wafer is embedded into the simulation graph, the epitaxial wafer coincides with the simulation graph, a supporting frame fixed with a single-face film is nested and coincides with the placing platform, the supporting frame fixed with the single-face film coincides with the placing platform, concave-convex structures on external frames of the supporting frame and the placing platform can coincide, the supporting frame and the placing platform are completely nested, the adhesive surface of the single-face film on the supporting frame is pasted with the epitaxial layer of the epitaxial wafer at the moment, and the supporting frame pasted with the epitaxial wafer is fixed on a micropore sucking disc of a cutting machine tool. The placing platform can simulate various shapes, is suitable for epitaxial wafers in various shapes, and is high in processing efficiency and good in product yield.
According to the embodiment of the invention, before bonding the epitaxial layer of the epitaxial wafer of the ultrathin substrate and the temporary sacrificial wafer, the method further comprises the following steps: and cleaning the epitaxial wafer and the temporary sacrificial wafer of the ultrathin substrate to remove the surface stains of the epitaxial wafer and the temporary sacrificial wafer of the ultrathin substrate.
Fig. 2 is a flow chart of the temporary bonding and wet selective etching process of the present invention, which is shown with reference to (a) to (G) in fig. 2.
As shown in fig. 2 (a), an external adhesion region and an internal release region are divided on an epitaxial layer of an epitaxial wafer of an ultrathin substrate, the adhesion region is located at the periphery of the release region, a first adhesion agent 1 (adhesion agent 1) is spin-coated on the adhesion region, and drying is performed. According to an embodiment of the present invention, the spin coating conditions of the first adhesive 1 in the adhesion zone include: spin coating is carried out by a spin coater, the spin coating speed is 800-. According to the embodiment of the invention, the central axis of the adhesion zone is coincident with the central axis of the release zone, the adhesion zone is positioned at the periphery of the release zone, and the adhesion zone and the release zone share one circle center and belong to concentric circles.
As shown in fig. 2 (B), a second adhesive 2 (adhesive 2) is spin-coated on the release area to obtain an epitaxial wafer to be bonded, where the first adhesive 1 spin-coated on the adhesion area is a high-viscosity glue, the second adhesive 2 spin-coated on the release area is a low-viscosity glue, and the viscosity of the first adhesive 1 is greater than that of the second adhesive 2. According to an embodiment of the present invention, the spin coating conditions of the second adhesive 2 at the release region include: spin coating is carried out by a spin coater, the spin coating speed is 1000-.
As shown in fig. 2 (C), an ultra-thin substrate epitaxial wafer 305 is bonded to the temporary sacrificial wafer 6, resulting in a bonded epitaxial wafer. The first adhesive 1 and the second adhesive 2 both belong to bonding agents of a bonding process. According to an embodiment of the present invention, the bonding conditions include: the bonding temperature is 180 ℃ and 300 ℃, the bonding pressure is 0.5-1.5MPa, and the bonding time is 30-60 min. And taking out the bonded epitaxial wafer sample, cleaning and removing the dirt on the surface of the bonded epitaxial wafer substrate.
As shown in fig. 2 (D), the substrate to which the epitaxial wafer is bonded (i.e., the ultra-thin substrate epitaxial wafer substrate 5) is etched with the first etching solution, and then the substrate is etched and cleaned, thereby obtaining the bonded epitaxial wafer with the etch stop layer exposed. The first corrosive liquid belongs to selective corrosive liquid, and does not corrode the corrosion stop layer or has a slow corrosion rate.
As shown in fig. 2 (E), the etching stop layer 4 is etched by the second etching solution until the epitaxial layer 3 of the epitaxial wafer is exposed, and the bonded epitaxial wafer with the exposed epitaxial layer is obtained after cleaning. The second corrosive liquid belongs to selective corrosive liquid and can clean different materials.
As shown in fig. 2 (F), the first adhesive applied to the adhesive region is detackified by the first debonding agent, exposing the second adhesive between the epitaxial layer and the temporary sacrificial sheet.
As shown in fig. 2 (G), the second adhesive applied to the release region is detackified by the second debonding agent, and the epitaxial layer and the temporary sacrificial sheet are separated.
The technical solution of the present invention will be described in detail below with reference to specific examples. It should be noted that the following specific examples are only for illustration and are not intended to limit the invention. The invention provides a method for preparing a vertical cavity surface emitting laser two-dimensional array with a completely removed substrate, wherein an epitaxial sheet material system is GaAs, the central wavelength of the laser is 808nm, and a temporary sacrificial sheet is a double-sided gold-plated thin GaAs substrate. The specific process for preparing the two-dimensional array comprises the following steps:
step 1: fig. 3 is a schematic view of the cutting principle of the present invention. As shown in fig. 3, an epitaxial wafer 302 is placed in a simulation pattern 303 of a placement platform 304.
Step 2: referring again to fig. 3, the dummy pattern 303 and the epitaxial wafer 302 are superimposed on each other. Then the supporting frame 301 fixed with the single-face film is nested and overlapped with the placing platform 304, at the moment, the supporting frame 301 is completely overlapped with the placing platform 304, and the supporting frame 301 is nested with the outer frame structure of the placing platform 304, so that the overlapping is guaranteed. After the support frame 301 and the placing platform 304 are nested and superposed, the epitaxial layer 3 of the epitaxial wafer 302 is in contact with the adhesive surface of the single-sided film.
And step 3: the support frame 301 to which the epitaxial wafer 302 is attached is fixed to a micro-hole chuck of a cutting machine.
And 4, step 4: the substrate was cut and thinned by a cutting machine along the cleavage edge crystal direction of the epitaxial wafer substrate to obtain an ultrathin substrate, and the thickness of the epitaxial wafer 305 was 40 μm.
And 5: the ultra-thin substrate epitaxial wafer 305 and the temporary sacrificial wafer 6 are cleaned to remove the contamination on the surfaces.
Step 6: fig. 4A is a schematic view of the pasting of the epitaxial wafer of the present invention. As shown in fig. 4A, a bonding agent is spin-coated on the epitaxial layer 3 of the epitaxial wafer of the ultra-thin substrate using a spin coater. The first adhesion agent with high viscosity is spin-coated in the adhesion zone 1 by using a zone-division glue coating process, wherein the spin-coating speed is 800-.
And 7: after the glue is coated, the epitaxial wafer 305 of the ultrathin substrate is placed into an oven to be dried, wherein the drying temperature is 150 ℃, and the drying time is 1.5 min.
And 8: taking out the dried epitaxial wafer 305 of the ultrathin substrate, and spin-coating the second adhesive in the release area 2 by using the spin coater again, wherein the spin-coating speed is 1300rpm, and the spin-coating time is 25 s.
And step 9: fig. 4B is a schematic view of a bonded epitaxial wafer of the present invention. As shown in fig. 4B, the bonded epitaxial wafer 305 of the ultra-thin substrate coated with glue and the temporary sacrificial wafer 6 are bonded by using a bonding machine, so as to obtain a bonded epitaxial wafer, wherein the bonding temperature is 180-.
Step 10: and after bonding is finished, taking out and cleaning the bonded sample, and removing the dirt on the surface of the bonded epitaxial wafer substrate.
Step 11: and etching the substrate bonded with the epitaxial wafer by using the first chemically selective etching solution until the etching stop layer 4 is completely exposed, and cleaning the epitaxial wafer.
Step 12: and corroding the corrosion stop layer 4 by using a second chemical selective corrosive liquid until the epitaxial layer 3 is exposed, and cleaning and drying after the corrosion.
Step 13: the back of the epitaxial layer 3 is plated with gold by electron beam evaporation, the plated metal can be gold, germanium, nickel, etc., and it is noted that the temperature during the gold plating process should be as low as possible, which is about 300 ℃.
Step 14: the epitaxial layer 3 is cleaved together with the temporary sacrificial sheet 6.
Step 15: the cleaved laser is packaged onto a diamond or copper heat sink.
Step 16: and removing the first adhesive by using the first debonding agent.
And step 17: and then removing the second adhesive by using a second debonding agent, debonding the epitaxial layer 3 and the temporary sacrificial sheet 6, and cleaning to complete the preparation of the two-dimensional array.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A method for removing an epitaxial wafer substrate comprises the steps that an epitaxial wafer sequentially comprises the substrate, an etching stop layer and an epitaxial layer from bottom to top; the method comprises the following steps:
cutting the substrate of the epitaxial wafer to obtain an epitaxial wafer of an ultrathin substrate;
bonding the epitaxial layer of the epitaxial wafer of the ultrathin substrate with a temporary sacrificial wafer to obtain a bonded epitaxial wafer;
corroding the bonded epitaxial wafer by using a corrosive liquid until the epitaxial layer is exposed to obtain the bonded epitaxial wafer with the exposed epitaxial layer;
and debonding the bonded epitaxial wafer with the exposed epitaxial layer, and separating the epitaxial layer and the temporary sacrificial wafer.
2. The method of claim 1, wherein the etching the bonded epitaxial wafer with the etching solution until the epitaxial layer is exposed to obtain the bonded epitaxial wafer with the exposed epitaxial layer comprises:
etching the substrate of the bonded epitaxial wafer by using a first etching solution until the etching stop layer is exposed;
and corroding the corrosion stop layer by using a second corrosive liquid until the epitaxial layer is exposed, thereby obtaining the bonded epitaxial wafer with the exposed epitaxial layer.
3. The method of claim 1, wherein said bonding said epitaxial layer of the epitaxial wafer of the ultra-thin substrate with a temporary sacrificial wafer, resulting in a bonded epitaxial wafer comprises:
dividing an adhesion area and a release area on the epitaxial layer of the epitaxial wafer of the ultrathin substrate, wherein the adhesion area is arranged around the periphery of the release area;
spin-coating a first adhesive on the adhesive area, and drying;
spin-coating a second adhesive on the release area to obtain an epitaxial wafer to be bonded, wherein the viscosity of the first adhesive is greater than that of the second adhesive;
and bonding the epitaxial layer of the epitaxial wafer to be bonded with the temporary sacrificial wafer.
4. The method of claim 3, wherein a central axis of the adhesion zone coincides with a central axis of the release zone.
5. The method of claim 3, wherein the spin coating conditions of the first adhesion agent comprise: the spin coating speed is 800-; the drying conditions include: the drying temperature is 120-; the spin coating conditions of the second adhesive include: the spin coating speed is 1000-1500rpm, and the spin coating time is 20-30 s.
6. The method of claim 1, wherein said debonding the bonded epitaxial wafer of exposed epitaxial layers, separating said epitaxial layers and said temporary sacrificial wafer, comprises:
debonding the first adhesive coated on the adhesion area by using a first debonding agent, and exposing the second adhesive between the epitaxial layer and the temporary sacrificial sheet;
and a second debonding agent is utilized to debond the second adhesion agent coated in the release area, and the epitaxial layer and the temporary sacrificial sheet are separated.
7. The method of any of claims 1-6, wherein, prior to bonding the epitaxial layer of the epitaxial wafer of the ultra-thin substrate to the temporary sacrificial wafer, further comprising:
and cleaning the epitaxial wafer of the ultrathin substrate and the temporary sacrificial wafer.
8. The method of any of claims 1-6, wherein the conditions for bonding the epitaxial layer of the epitaxial wafer of the ultra-thin substrate to the temporary sacrificial wafer comprise: the bonding temperature is 180 ℃ and 300 ℃, the bonding pressure is 0.5-1.5MPa, and the bonding time is 30-60 min.
9. The method of any of claims 1-6, wherein said dicing said substrate of the epitaxial wafer further comprises:
placing the epitaxial wafer in a simulation graph on a placing platform, wherein one side of the substrate of the epitaxial wafer is embedded in the simulation graph;
nesting and overlapping the support frame fixed with the single-sided film and the placing platform to enable the support frame to be adhered to the epitaxial layer of the epitaxial wafer;
and fixing the support frame adhered with the epitaxial wafer on a micropore sucking disc of a cutting machine tool.
10. The method of any of claims 1-6, wherein the substrate has a thickness of 30-50 μm on the epitaxial wafer of the ultra-thin substrate.
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