CN113764886B - 4G LTE broadband omnidirectional antenna and bandwidth adjusting method thereof - Google Patents

Abstract

The present invention provides a 4G LTE broadband omnidirectional antenna and its bandwidth adjustment method, comprising: a metal floor, a dielectric substrate, and a feed SMA. Shaped metal patch, the arc-shaped microstrip line is arranged along the circumference of the circular patch; the other side of the dielectric substrate is provided with a ring-shaped metal patch, and the ring-shaped metal patch is set concentrically with the center probe of the feeding SMA, along the The circular metal patch is circumferentially arranged with a lower arc-shaped microstrip line, and the lower arc-shaped microstrip line and the annular metal patch are connected by connecting branches, and the lower arc-shaped microstrip line is separated from the dielectric substrate and the upper arc-shaped microstrip line corresponding to the position. A plurality of equivalent inductances and equivalent capacitances respectively constitute two resonance points, and the resonance frequencies of the two resonance frequency points can be tuned separately. By adjusting the physical structure parameters of the antenna, the size of the resonance frequency can be controlled, so that the two resonance frequencies are respectively located at the low and high end of the band to cover the target bandwidth.

Description

A 4G LTE broadband omnidirectional antenna and its bandwidth adjustment method

technical field

The invention relates to the technical field of antennas, in particular to a 4G LTE omnidirectional antenna.

Background technique

With the rapid development of information technology, the data traffic of wireless communication has increased sharply, which also puts forward higher requirements for wireless base stations. Antennas, as devices for transmitting and receiving radio signals, play a pivotal role in wireless communication systems.

On the one hand, the base station antenna needs to be able to cover a sufficiently large impedance bandwidth. For example, 1.7-2.7GHz contains many common frequency bands, such as DCS1800 (1710-1880MHz), PCS1900 (1850-1990MHz), UMTS (1920-2170MHz), LTE2300 (2305MHz -2400MHz), LTE2500 (2500-2690MHz), etc., use multiple antennas or frequency reconfigurable antennas to cover these frequency bands, which will inevitably lead to problems such as coupling or parasitic, increasing the complexity of the system, and one can cover these frequency bands at the same time The antenna is obviously a better solution.

On the other hand, omnidirectional antennas are in great demand in wireless communication base stations, especially indoor communication base stations, because they can achieve 360° full coverage of signals on a certain azimuth plane. Therefore, it is of great practical significance to study broadband omnidirectional antennas.

Contents of the invention

In order to solve the above problems, the technical solution adopted in the present invention is:

A 4G LTE broadband omnidirectional antenna, including: metal floor, dielectric substrate, feed SMA,

The metal floor and the dielectric substrate are supported and connected by metal columns,

The central probe of the feeding SMA passes through the dielectric substrate, and the surface of the dielectric substrate away from the metal floor is provided with a circular metal patch concentrically welded with the central probe of the feeding SMA. Arrange arc-shaped microstrip lines in the circumferential direction of the circular patch;

The other side surface of the dielectric substrate is provided with a ring-shaped metal patch, the ring-shaped metal patch is arranged concentrically with the central probe of the feeding SMA, and a lower arc-shaped microstrip is arranged along the circumference of the ring-shaped metal patch line, the lower arc-shaped microstrip line and the ring-shaped metal patch are connected through the connecting branch, and the position of the lower arc-shaped microstrip line between the dielectric substrate and the upper arc-shaped microstrip line is the same correspond;

The circular metal patch partially overlaps with the annular metal patch in the extending direction of the feeding SMA center probe;

The metal post passes through the dielectric substrate and is connected to the end of the upper arc-shaped microstrip line.

Further, the number of the upper arc-shaped microstrip lines is multiple, and the number of the upper arc-shaped microstrip lines is a circular equidistant array around the center probe of the feeding SMA;

The number of the lower arc microstrip lines is the same as that of the upper arc microstrip lines;

The number of the metal pillars is the same as that of the upper arc-shaped microstrip lines.

Further, the number of the upper arc-shaped microstrip lines is three.

Further, the diameter of the inner ring of the annular metal patch is larger than the diameter of the central probe of the feeding SMA.

Further, the dielectric substrate is a circular dielectric substrate.

Further, the metal floor is circular, and the metal floor is provided with a central hole, the probe of the feeding SMA passes through the central hole, and there are fixing holes around the central hole, and the fixing bolts pass through the fixing hole. holes to secure the feed SMA to the metal floor.

Further, the metal column is vertically connected to the metal floor, the floor and the dielectric substrate are parallel to each other, and there is a gap between the metal floor and the dielectric substrate.

Further, the end of the lower arc microstrip line close to the metal pillar does not intersect the metal pillar.

The present application also provides a bandwidth adjustment method of a 4G LTE broadband omnidirectional antenna, which is used to adjust the broadband frequency of the above-mentioned 4GLTE broadband omnidirectional antenna. The bandwidth adjustment method includes:

The resonance frequency of the low-end bandpass and the resonance frequency of the high-end bandpass are adjusted separately, and the combination of the low-end bandpass frequency and the high-end bandpass frequency covers a wide resonance frequency band.

Further, adjusting the low-end bandpass resonance frequency includes: adjusting the overlapping area of the circular metal patch and the arc-shaped metal patch, and adjusting the thickness of the feeding SMA center probe to adjust the low-end bandpass resonance At the same time, adjust the high-end bandpass resonant frequency by adjusting the overlapping area of the upper arc microstrip line and the lower arc microstrip line, and adjusting the thickness of the metal pillar;

or,

By adjusting the overlapping area of the upper arc-shaped microstrip line and the lower arc-shaped microstrip line, and adjusting the thickness of the metal pillars, the low-end bandpass resonant frequency can be adjusted. At the same time, by adjusting the circular metal patch and the arc-shaped metal The overlapping area of the patch and the thickness of the central probe of the feeding SMA are adjusted to adjust the high-end bandpass resonant frequency.

The beneficial effects of the present invention are reflected in:

The inductance equivalent to the central probe of the feeding SMA, the capacitance equivalent to the circular metal patch and the ring patch, and the series resonant circuit formed form the first resonance frequency point; the upper arc set on the upper and lower surfaces of the dielectric substrate The equivalent capacitance formed by the arc-shaped microstrip line and the lower arc-shaped microstrip line is equivalent to the metal column connected to the end of the upper arc-shaped microstrip line to form an inductance, and the series resonant circuit formed forms the second resonance frequency point. The resonant frequencies of the two resonant frequency points can be tuned separately, and the size of the resonant frequency can be controlled by adjusting the physical structure parameters of the antenna, so that the two resonant frequencies are respectively located at the low end and high end of the passband, thereby covering the target bandwidth. While making the antenna have a wider bandwidth, the number and complexity of the antenna are not increased, and there is no need to perform reconfigurable settings on the antenna.

The upper arc-shaped microstrip line and the lower arc-shaped microstrip line are arranged along the circumference of the feed SMA so that the emitted electromagnetic waves can be emitted along the circumference of the center probe of the central SMA, realizing 360° signal coverage of the center probe circumference.

Description of drawings

Fig. 1 is a schematic diagram of an antenna explosion structure in an embodiment of the present invention;

Fig. 2 is a top view of the dielectric substrate of the antenna in the embodiment of the present invention;

Fig. 3 is a bottom view of the dielectric substrate of the antenna in the embodiment of the present invention;

Fig. 4 is the front view of the antenna in the embodiment of the present invention;

Fig. 5 is the equivalent circuit diagram of the antenna in the embodiment of the present invention;

FIG. 6 is a diagram of the measured reflection coefficient of the antenna in the embodiment of the present invention;

Fig. 7 is the radiation pattern diagram of the antenna in the embodiment of the present invention;

Reference signs:

Metal floor-10, center hole-11, fixing hole-12;

Dielectric Substrate-20;

Feed SMA-30, center probe-31, fixing bolt-32;

Circular metal patch-51, circular metal patch-52, upper arc-shaped microstrip line-53, lower arc-shaped microstrip line-54, connection branch-55, metal column-56.

Detailed ways

The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Unless otherwise specified, the technical means used in the embodiments are conventional means well known to those skilled in the art.

As shown in Figures 1 to 7, the present invention provides a 4G LTE broadband omnidirectional antenna, including: a metal floor 10, a dielectric substrate 20, and a feed SMA30, and the metal floor 10 and the dielectric substrate 20 are connected by a metal column 56 for support connection,

The center probe 31 of the feed SMA30 passes through the dielectric substrate 20, and the surface of the dielectric substrate 20 away from the metal floor 10 is provided with a circular metal plate welded concentrically with the center probe 31 of the feed SMA30. Patch 51, an arc-shaped microstrip line 53 is arranged along the circumference of the circular patch;

The other side surface of the dielectric substrate 20 is provided with an annular metal patch 52, the annular metal patch 52 is arranged concentrically with the central probe 31 of the feeding SMA30, and along the circumferential direction of the annular metal patch 52 are arranged The lower arc-shaped microstrip line 54 is connected to the annular metal patch 52 through the connection branch 55, and the lower arc-shaped microstrip line 54 is separated from the dielectric substrate 20 and The position of the upper arc-shaped microstrip line 53 is corresponding;

The circular metal patch 51 partially overlaps with the annular metal patch 52 in the extending direction of the central probe 31 of the feeding SMA30; The ends are connected.

Existing antennas that can cover a sufficiently large impedance bandwidth generally use multi-antenna structures or frequency reconfigurable antennas to cover these frequency bands, which will inevitably cause coupling or parasitic problems, and will also increase antennas and/or power amplifiers The complexity of the system increases manufacturing difficulty and manufacturing cost.

The technical solution provided by the present invention forms the inductance equivalent to the center probe 31 of the feeding SMA30, the capacitance equivalent to the circular metal patch 51 and the annular patch, and the series resonant circuit formed forms the first resonance frequency point The equivalent capacitance formed by the upper arc-shaped microstrip line 53 and the lower arc-shaped microstrip line 54 arranged on the upper and lower surfaces of the dielectric substrate 20 is equivalent to the metal column 56 connected to the end of the upper arc-shaped microstrip line 53 to form an inductance , the formed series resonant circuit forms the second resonant frequency point. The resonant frequencies of the two resonant frequency points can be tuned separately, and the resonant frequency can be controlled by adjusting the physical structure parameters of the antenna, so that the two resonant frequencies are respectively located at the low end and high end of the passband, thus covering the target bandwidth of 1.7-2.7GHz. While making the antenna have a wider bandwidth, the number and complexity of the antenna are not increased, and there is no need to perform reconfigurable settings on the antenna.

It should be noted that the feeding method of the above two resonant frequency points is that the interface of the feeding SMA30 is connected to the signal line, and the high-frequency oscillating current enters through the interface of the feeding SMA30, and then reaches the central probe 31 of the feeding SMA30. , the center of the circular metal patch 51 is welded to the central probe 31 of the feeder SMA30, and the circular metal patch 51 and the circular metal patch 52 partially overlap in the extending direction of the central probe 31 of the feeder SMA30. The dielectric substrate 20, at this time, its overlapping portion and the dielectric substrate 20 between the overlapping portions together constitute a flat plate capacitor; correspondingly, the positions of the upper arc-shaped microstrip line 53 and the lower arc-shaped microstrip line 54 correspond to the dielectric substrate 20, That is, the upper arc-shaped microstrip line 53 and the lower arc-shaped microstrip line 54 overlap each other through the dielectric substrate 20, so that the upper arc-shaped microstrip line 53, the dielectric substrate 20, and the lower arc-shaped microstrip line 54 together form another flat capacitor , the upper arc microstrip line 53 is fed by the lower arc microstrip line 54, and the upper arc microstrip line 53 is grounded through the metal post 56 to form an equivalent inductance. Finally, the high-frequency oscillating current input is radiated outward by electromagnetic waves generated by the metal pillar 56 .

The left side of Fig. 5 shows the schematic diagram of equivalent capacitance and equivalent inductance of the present invention, wherein the center probe 31 of feeding SMA30 is equivalent to inductance L1, and the overlapping part of circular metal patch 51 and annular metal patch 52 It is equivalent to a capacitor C1; the upper arc-shaped microstrip line 53 and the lower arc-shaped microstrip line 54 are equivalent to a capacitor C2, and the metal pillar 56 is equivalent to an inductance L2. The circuit diagram is shown on the right side of Figure 5. L1 and C1 form a series resonant circuit to form the first resonant frequency point, and L2 and C2 form a series resonant circuit to form the first resonant frequency point.

The equivalent capacitance formed between the circular metal patch 51 and the annular metal patch 52, and between the upper arc-shaped microstrip antenna and the lower arc-shaped microstrip antenna is a flat plate capacitance. The plate capacitance formed by the effect simplifies the installation structure of the antenna and can cover a sufficiently large entire bandwidth.

Further, the number of upper arc-shaped microstrip lines 53 is multiple, and a plurality of upper arc-shaped microstrip lines 53 are in a circular equidistant array around the central probe 31 of the feeding SMA30;

The number of the lower curved microstrip lines 54 is the same as that of the upper curved microstrip lines 53;

The number of metal pillars 56 is the same as that of the upper arc-shaped microstrip line 53 .

The numbers and array angles of the lower curved microstrip lines 54 and metal pillars 56 are the same as those of the upper curved microstrip lines, and each upper curved microstrip line has a lower arc corresponding to it one by one. Shaped microstrip lines and metal pillars.

The electromagnetic waves generated at the metal post 56 radiate outward, and each group of upper arc-shaped microstrip lines 53 and the plate capacitance formed by the upper arc-shaped microstrip lines 53 are connected to a metal post 56, and a plurality of upper arc-shaped microstrip lines 53 are The circular equidistant array of the center probe 31 of the feeding SMA30 makes the metal pillars 56 equidistantly arranged around the central probe 31 of the feeding SMA30, and is evenly arranged, and the electromagnetic waves generated by the plurality of metal pillars 56 have Better symmetrical distribution, so as to obtain a better symmetrical electromagnetic field, so that the antenna has better omnidirectional radiation performance.

Further, the number of the upper arc-shaped microstrip lines 53 is three.

As shown in Figure 1, when the number of the upper arc-shaped microstrip line 53 is three, the number of the lower arc-shaped microstrip line 54 and the number of metal pillars 56 are also three respectively, and the electromagnetic field generated at this time has better Symmetry, and the number of three can get a good balance between the symmetry of the electromagnetic field and the production cost of the antenna.

Figure 6 shows the measured reflection coefficient diagram of the antenna when the number of metal pillars 56 is three. The reflection coefficients of the 4GLTE broadband omnidirectional antenna provided by this application in the 1.7-2.7GHz frequency band are all less than -10dp, which conforms to the design of the antenna Require.

Figure 7 shows that when the number of metal pillars 56 is three, the antenna radiation pattern in the 1.7-2.7GHz frequency band can be clearly seen from the accompanying drawings that the 4GLTE broadband omnidirectional antenna provided by the present invention is 1.7-2.7GHz The symmetry of the electromagnetic field generated when the signal in the frequency band is transmitted is better, so that the antenna has better omnidirectional radiation performance.

Further, the diameter of the inner ring of the annular metal patch 52 is greater than the diameter of the central probe 31 of the feeder SMA 30 .

There is a certain gap between the annular metal patch 52 and the central probe 31 of the feeding SMA30, and the central probe 31 of the feeding SMA30 is fed by capacitive coupling, which can improve the impedance matching effect of the antenna.

Further, the dielectric substrate 20 is a circular dielectric substrate 20 .

The central probe 31 of the feeding SMA 30 passes through the center of the circular dielectric substrate 20 , and the upper arc-shaped microstrip line 53 and the lower arc-shaped microstrip line 54 are arranged in the circular center.

Further, the metal floor 10 is circular, and the metal floor 10 is provided with a central hole 11, the probe of the feeding SMA30 passes through the central hole 11, and a fixing hole 12 is also opened around the central hole 11, and the fixing bolt 32 passes through the fixing hole 12. Fix the feeder SMA30 on the metal floor 10. The feeding SMA30 is installed and fixed through the fixing bolts 32 and the fixing holes 12. The central probe 31 of the feeding SMA30 passes through the central hole 11 and then extends to the dielectric substrate 20 to feed the arc-shaped microstrip line on the dielectric substrate 20. .

Further, the metal column 56 is vertically connected to the metal floor 10 , the floor and the dielectric substrate 20 are parallel to each other, and there is a gap between the metal floor 10 and the dielectric substrate 20 .

Air is used as the medium in the gap between the metal floor 10 and the dielectric substrate 20 to further expand the impedance bandwidth of the antenna.

Further, the end of the lower arc microstrip line 54 close to the metal post 56 does not intersect with the metal post 56 . That is, the length of the lower arc-shaped microstrip line 54 near one end of the metal post 56 is shorter than the length of the upper arc-shaped microstrip line 53, and the extra section of the upper arc-shaped microstrip line 53 is connected to the metal post 56, only the upper arc The connection between the shaped microstrip line 53 and the metal pillar 56 produces an equivalent inductance and a plate capacitance together to form a resonant circuit. The high-frequency oscillating current first passes through the capacitance equivalent to the upper arc microstrip line and the lower arc microstrip line 54, and then enters the The metal pillar 56 generates an electromagnetic field radiated into the air at the metal pillar 56 .

The present application also provides a bandwidth adjustment method of a 4G LTE broadband omnidirectional antenna, which is used to adjust the broadband frequency of the above-mentioned 4GLTE broadband omnidirectional antenna. The bandwidth adjustment method includes:

The resonance frequency of the low-end bandpass and the resonance frequency of the high-end bandpass are adjusted separately, and the combination of the low-end bandpass frequency and the high-end bandpass frequency covers a wide resonance frequency band.

An object of the present invention is to provide a broadband antenna to replace existing broadband antennas realized by multiple antennas or reconfigurable methods, simplify the structure of the broadband antenna, and avoid unnecessary coupling and parasitic problems. By setting the first resonant point and the second resonant point formed by the two resonant circuits, the resonant frequencies of the two resonant frequency points can be tuned separately, and the resonant frequency can be controlled by adjusting the physical structure parameters of the antenna, so that the two resonant frequencies They are respectively located at the low end and high end of the passband, thus covering the target bandwidth of 1.7-2.7GHz. That is to say, if the first resonance point is adjusted to the low-end band-pass frequency during adjustment, the second resonance point is adjusted to the high-end band-pass frequency; if the first resonance point is adjusted to the high-end band-pass frequency, the second resonance point is adjusted to Low end bandpass frequency.

Combining the high-end band-pass frequency and the low-end band-pass frequency to jointly cover the target bandwidth frequency band does not require the combination of multiple antennas or reconfigurable antennas, and only one antenna can be used to realize the broadband antenna.

Further, adjusting the low-end bandpass resonance frequency includes: adjusting the overlapping area of the circular metal patch and the arc-shaped metal patch, and adjusting the thickness of the feeding SMA center probe to adjust the low-end bandpass resonance At the same time, adjust the high-end bandpass resonant frequency by adjusting the overlapping area of the upper arc microstrip line and the lower arc microstrip line, and adjusting the thickness of the metal pillar;

or,

By adjusting the overlapping area of the upper arc-shaped microstrip line and the lower arc-shaped microstrip line, and adjusting the thickness of the metal pillars, the low-end bandpass resonant frequency can be adjusted. At the same time, by adjusting the circular metal patch and the arc-shaped metal The overlapping area of the patch and the thickness of the central probe of the feeding SMA are adjusted to adjust the high-end bandpass resonant frequency.

Specifically, increasing the size of the circular patch or reducing the diameter of the inner ring of the circular patch can increase the overlapping area of the circular patch and the circular patch, thereby increasing the capacitance of the capacitor L1 formed by the two, thereby This shifts the first resonant frequency towards lower frequencies and vice versa. On the other hand, reducing the length of the upper arc-shaped microstrip line 53 and/or the lower arc-shaped microstrip line 54 can reduce the overlapping area of the upper arc-shaped microstrip line 53 and the lower arc-shaped microstrip line 54, thereby reducing The capacitance value of the capacitance formed between the arc-shaped microstrip lines on the upper and lower surfaces of the substrate, so that the second resonant frequency moves to the high frequency direction, and vice versa.

Furthermore, the thickness of the central probe 31 and the metal post 56 of the feed SMA30 affects the inductance value. Specifically, the thinner the center probe 31 or the metal post 56 of the feed SMA30, the greater the inductance value of the inductance. The lower the first resonant frequency or the second resonant rate.

Adjusting the first resonance point or the second resonance point to low-end band-pass or high-end band-pass respectively enables the bandwidth of the antenna to cover a wider frequency band.

In describing the embodiments of the present invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "straight", "horizontal", " Orientations or positional relationships indicated by "center", "top", "bottom", "top", "bottom", "inner", "outer", "inner", "outer", etc. are based on the orientation or position shown in the drawings The positional relationship is only for the purpose of describing the present invention and simplifying the description, but does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention. Wherein, "inside" refers to an internal or enclosed area or space. "Periphery" refers to the area around a particular component or a particular area.

In the description of the embodiments of the present invention, the terms "first", "second", "third", and "fourth" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implying The number of technical characteristics indicated. Thus, a feature defined as "first", "second", "third" and "fourth" may expressly or implicitly include one or more of such features. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

In the description of the embodiments of the present invention, it should be noted that unless otherwise specified and limited, the terms "installation", "connection", "connection", and "assembly" should be understood in a broad sense, for example, it may be fixed The connection can also be a detachable connection or an integral connection; it can be a direct connection or an indirect connection through an intermediary, and it can be the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention in specific situations.

In the description of the embodiments of the present invention, specific features, structures, materials or characteristics may be combined in any one or more embodiments or examples in an appropriate manner.

In the description of the embodiments of the present invention, it should be understood that "-" and "~" indicate the same range of two numerical values, and the range includes the endpoint. For example: "A-B" means greater than or equal to A, and less than or equal to the range of B. "A to B" means a range that is greater than or equal to A and less than or equal to B.

In the description of the embodiments of the present invention, the term "and/or" herein is only an association relationship describing associated objects, which means that there may be three relationships, for example, A and/or B, which can mean: exist alone A, A and B exist at the same time, and B exists alone. In addition, the character "/" in this article generally indicates that the contextual objects are an "or" relationship.

Although the embodiments of the present invention have been shown and described, those skilled in the art can understand that various changes, modifications and substitutions can be made to these embodiments without departing from the principle and spirit of the present invention. and modifications, the scope of the invention is defined by the appended claims and their equivalents.

Claims (8)

1. A4G LTE wideband omnidirectional antenna, comprising: a metal floor, a dielectric substrate, a power feed SMA,

the metal floor and the dielectric substrate are supported and connected through metal columns,

the central probe of the feed SMA penetrates through the dielectric substrate, a circular metal patch which is concentrically welded with the central probe of the feed SMA is arranged on the surface of one side of the dielectric substrate, which is far away from the metal floor, and an upper arc-shaped microstrip line is arranged along the circumferential direction of the circular metal patch;

an annular metal patch is arranged on the other side surface of the dielectric substrate, the annular metal patch and a central probe of the feed SMA are concentrically arranged, a lower arc microstrip line is arranged along the circumferential direction of the annular metal patch, the lower arc microstrip line is connected with the annular metal patch through a connecting branch, and the position of the lower arc microstrip line, which is spaced from the dielectric substrate, corresponds to the position of the upper arc microstrip line;

the circular metal patch and the annular metal patch are partially overlapped in the extending direction of the feed SMA center probe; the metal column penetrates through the dielectric substrate and is connected with the tail end of the upper arc-shaped microstrip line; the number of the upper arc-shaped microstrip lines is multiple, and the upper arc-shaped microstrip lines are wound and fed with the SMA center probe circular equidistant array;

the number of the lower arc-shaped microstrip lines is the same as that of the upper arc-shaped microstrip lines;

the number of the metal posts is the same as that of the upper arc-shaped microstrip lines;

the number of the upper arc-shaped microstrip lines is three.

2. The 4G LTE wideband omni directional antenna of claim 1, wherein: the diameter of the inner ring of the annular metal patch is larger than that of the feed SMA center probe.

3. The 4G LTE wideband omni directional antenna of claim 1, wherein: the dielectric substrate is a circular dielectric substrate.

4. The 4G LTE wideband omnidirectional antenna of claim 3, wherein: the metal floor is circular, a central hole is formed in the metal floor, the probe of the feed SMA penetrates through the central hole, fixing holes are further formed in the periphery of the central hole, and fixing bolts penetrate through the fixing holes to fix the feed SMA on the metal floor.

5. The 4G LTE wideband omni directional antenna of claim 1, wherein: the metal column is vertically connected with the metal floor, the floor is parallel to the dielectric substrate, and a gap is formed between the metal floor and the dielectric substrate.

6. The 4G LTE wideband omni directional antenna of claim 1, wherein: one end, close to the metal column, of the lower arc-shaped microstrip line does not intersect with the metal column.

7. A bandwidth adjusting method of a 4G LTE broadband omnidirectional antenna is characterized in that: adjusting the wideband frequency of the 4G LTE wideband omni-directional antenna of any of claims 1-6, the bandwidth adjustment method comprising:

and respectively adjusting the resonance frequency of the low-end band-pass and the resonance frequency of the high-end band-pass, and combining the low-end band-pass frequency and the high-end band-pass frequency to cover a wider resonance frequency band.

8. The method of claim 7, wherein the method for adjusting the bandwidth of the 4G LTE wideband omni-directional antenna comprises:

adjusting the low-end band-pass resonance frequency by adjusting the overlapping area of the circular metal patch and the annular metal patch and adjusting the thickness of a feed SMA center probe, and adjusting the high-end band-pass resonance frequency by adjusting the overlapping area of the upper arc-shaped microstrip line and the lower arc-shaped microstrip line and adjusting the thickness of the metal column;

or the like, or, alternatively,

the low-end band-pass resonance frequency is adjusted by adjusting the overlapping area of the upper arc-shaped microstrip line and the lower arc-shaped microstrip line and the thickness of the metal column, and the high-end band-pass resonance frequency is adjusted by adjusting the overlapping area of the circular metal patch and the annular metal patch and the thickness of the feed SMA center probe.

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