CN115101915B - Design method of energy high-pass device - Google Patents
Design method of energy high-pass device Download PDFInfo
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- CN115101915B CN115101915B CN202210737753.5A CN202210737753A CN115101915B CN 115101915 B CN115101915 B CN 115101915B CN 202210737753 A CN202210737753 A CN 202210737753A CN 115101915 B CN115101915 B CN 115101915B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/007—Manufacturing frequency-selective devices
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/392—Floor-planning or layout, e.g. partitioning or placement
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The application relates to an energy high-pass device design method. The method comprises the following steps: two metal patches are respectively and symmetrically constructed at the left end and the right end of the microstrip line, wherein the first metal patch is connected with the microstrip line through two parallel diodes with opposite directions, and is connected with the second metal patch through an inductor, and the second metal patch is connected with the microstrip line through a capacitor on one hand and is connected with the metal ground on the back surface through a metallized via hole passing through a dielectric substrate on the other hand, so that an energy high-pass device is formed. The invention realizes the high-performance energy high-pass device only through the topological structure of the microstrip line circuit, the passive device and the diode, and compared with the traditional means, the invention effectively reduces the design difficulty through the standardized design thought, has the advantages of miniaturization, low cost, high performance, wide applicable frequency band and the like, and expands the application scene.
Description
Technical Field
The application relates to the field of device design, in particular to an energy high-pass device design method.
Background
With the development of electronic technology in recent years, the rated working powers of various devices are inevitably affected, the problem of electromagnetic compatibility is difficult to avoid, and the requirement for modulating the electromagnetic wave energy domain is urgent along with the threat of strong electromagnetic pulse in the future electromagnetic space. The main current means for modulating electromagnetic energy is mainly energy low-pass technology, namely, total reflection at high energy and total transmission at low energy, and can be directly used for realizing reflection type protection at the front end of radio frequency. The energy high-pass technology refers to high-energy transmission and low-energy reflection, and has great application potential in the fields of absorption type electromagnetic compatibility and protection. The related research of the energy high-pass technology is less at present, and the main implementation scheme at present is to realize total reflection by designing a metamaterial structure and utilizing the equivalent negative dielectric constant or magnetic permeability (single negative medium) of the metamaterial to enable the macroscopic equivalent impedance to be imaginary number at low energy so as to lead the impedance to be unmatched, and to recover the natural medium characteristic at high energy so as to lead the impedance to be matched so as to realize total transmission. The current energy high-pass modulation technology based on metamaterial design is limited to be additionally arranged in a waveguide at present, and is large in size, high in cost, high in design difficulty and high in comprehensive application limitation.
Disclosure of Invention
In view of the foregoing, it is desirable to provide an energy high-pass device design method that can effectively reduce the difficulty of designing an energy high-pass device by a standardized design concept.
A method of energy high-pass device design, the method comprising:
symmetrically constructing two metal patches, namely a first metal patch and a second metal patch, on the left side and the right side of the microstrip line structure respectively;
connecting the first metal patch with the microstrip line through two parallel diodes with opposite directions;
connecting the first metal patch with the second metal patch through an inductor;
connecting the second metal patch with the microstrip line through a capacitor;
connecting the second metal patch with the metal ground of the microstrip line structure through a dielectric substrate of the microstrip line structure by a metallized via hole;
the microstrip line structure, the metal patch, the diode, the inductor, the capacitor and the metallized via hole are connected to form an energy high-pass device.
In one embodiment, the method further comprises: the values of the diode and the inductor are determined by the required working frequency range, so that the series resonance frequency point of the energy high-pass device is moved into the required working frequency range.
In one embodiment, the method further comprises: the value of the capacitor is determined by the center frequency point of the parallel resonance of the energy high-pass device.
In one embodiment, the method further comprises: the size of the metal patch and the size of the metallized via hole are determined according to the design of the diode, capacitor and inductor package sizes.
In one embodiment, the method further comprises: based on the energy high-pass device, symmetrically adding a pair of metal patches on the left side and the right side of one port of the microstrip line structure to form a third metal patch;
connecting the third metal patch with the microstrip line through a load resistor;
connecting the third metal patch to the metal ground through a metallized via through the dielectric substrate;
and forming a single-port energy high-pass device by the third metal patch, the load resistor and the added metallized via on the basis of the energy high-pass device.
In one embodiment, the method further comprises: and repeatedly constructing a structure formed by the metal patch, the diode, the inductor, the capacitor, the metallized via hole and connection thereof at intervals of one quarter wavelength in the longitudinal direction of the microstrip line, so as to form an energy high-pass device comprising a multi-stage structure.
In one embodiment, the method further comprises: and the design of the energy high-pass device of any frequency range from L to Ku wave band is realized by adjusting the values of the diode, the capacitor and the inductor.
According to the design method of the energy high-pass device, two metal patches are respectively and symmetrically constructed at the left end and the right end of the microstrip line, wherein the first metal patch is connected with the microstrip line through two parallel diodes with opposite directions, and meanwhile is connected with the second metal patch through an inductor, and the second metal patch is connected with the microstrip line through a capacitor on one hand and is connected with the metal ground on the back surface through a metallized via hole penetrating through a dielectric substrate on the other hand, so that the energy high-pass device is formed. The invention realizes the high-performance energy high-pass device only through the topological structure of the microstrip line circuit, the passive device and the diode, and compared with the traditional means, the invention effectively reduces the design difficulty through the standardized design thought, reduces the cost and the size, improves the energy high-pass performance and expands the application scene.
Drawings
FIG. 1 is a flow diagram of a method of designing an energy high-pass device in one embodiment;
FIG. 2 is an overall block diagram of an energy high-pass device in one embodiment;
FIG. 3 is a partial block diagram of an energy high pass device in one embodiment;
FIG. 4 is an equivalent circuit diagram of an energy high pass device in one embodiment, wherein (a) is an equivalent circuit model diagram of the energy high pass device, (b) is an equivalent circuit model diagram when the diode is not conducting, and (c) is an equivalent circuit model diagram when the diode is conducting;
FIG. 5 is an overall block diagram of an energy high-pass device variation 1 in one embodiment;
FIG. 6 is an overall block diagram of an energy high-pass device variation 2 in one embodiment;
FIG. 7 is a diagram of S-band design structure S-parameter simulation results in one embodiment;
FIG. 8 is a diagram of S-band design structure simulation results for a C-band design structure in one embodiment;
FIG. 9 is a diagram of S-parameter simulation results of an X-Ku band design structure in one embodiment;
fig. 10 is a graph of the results of 1.6GHz injection measurements in one embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application.
In one embodiment, as shown in fig. 1, there is provided an energy high-pass device design method comprising the steps of:
step 102, two metal patches, namely a first metal patch and a second metal patch, are symmetrically constructed on the left side and the right side of the microstrip line structure.
The structure foundation of the invention is a microstrip line structure, namely a metal ground positioned on the bottom surface, a medium substrate positioned in the middle and a microstrip line positioned in the center above the medium substrate, and two ends of the microstrip line are respectively connected through a sma adapter to enable the whole structure to be used as a two-port device.
Step 104, connecting the first metal patch with the microstrip line through two parallel diodes with opposite directions.
Step 106, connecting the first metal patch with the second metal patch through an inductor.
Step 108, connecting the second metal patch with the microstrip line through a capacitor.
Step 110, connecting the second metal patch with the metal ground of the microstrip line structure through a dielectric substrate of the microstrip line structure by a metallized via hole.
Step 112, forming an energy high-pass device by a microstrip line structure, a metal patch, a diode, an inductor, a capacitor, a metallized via hole and connection thereof.
The design of the invention is that the microstrip line is added with the following components: diode and capacitor, inductance, metal via and metal patch. And a specific topological structure is formed with the diode, the capacitor and the inductor through the connection of the metal via hole and the metal patch. By adopting the design mode, when a high-intensity radiation field is incident, the diode is conducted, so that the topological structure is in a high-impedance parallel resonance state, and energy can be normally transmitted; when a normal small signal is incident, the diode remains in an off state, and the topology is presented as a series resonance state of low impedance, so that the signal is totally reflected.
The idea of determining the values of the diode, the capacitor and the inductor is as follows: firstly, selecting proper diodes and inductors according to a required working frequency range, and enabling a series resonance frequency point to move into the working frequency range; then, considering the center frequency point of the parallel resonance, and determining the value of the capacitor; and finally, balancing the bandwidth and the high-power transmission performance according to the requirements. The existing diode and capacitance inductance value range can support and realize the design of any frequency band from L to Ku wave bands.
The whole structure diagram of the energy high-pass device formed by the method is shown in fig. 2, the partial structure diagram is shown in fig. 3, and the sizes of the metal patches and the metallized through holes are determined according to the diode, capacitor and inductor package size design.
An equivalent circuit model of the energy high-pass device is shown in fig. 4 (a). Wherein Cp is a capacitor, D is a diode, and Ls is an inductor; the diode in fig. 4 (b) may be equivalently connected with a capacitor Cd in series with a lead resistor Rs, and the diode in fig. 4 (c) may be equivalently connected with a resistor Rd in series with an inductor Ld after being turned on. When a small signal is transmitted, the diode is in an off state, the equivalent circuit is in a series resonance state, impedance is mismatched, and signals are reflected; when large signals are transmitted, the diode is in a conducting state, the equivalent circuit is in a parallel resonance state, the impedance is matched, and the signals are normally transmitted.
In the design method of the energy high-pass device, two metal patches are respectively and symmetrically constructed at the left end and the right end of the microstrip line, wherein the first metal patch is connected with the microstrip line through two parallel diodes with opposite directions, and is connected with the second metal patch through an inductor, and the second metal patch is connected with the microstrip line through a capacitor on one hand and is connected with the metal ground on the back surface through a metallized via hole on the other hand, so that the energy high-pass device is formed. The invention realizes the high-performance energy high-pass device only through the topological structure of the microstrip line circuit, the passive device and the diode, and compared with the traditional means, the invention effectively reduces the design difficulty through the standardized design thought, has the advantages of miniaturization, low cost, high performance, wide applicable frequency band and the like, and expands the application scene.
In one embodiment, as shown in fig. 5, there is also provided a variation 1 of the basic energy high-pass device design structure: the variant 1 is based on an energy high-pass device, and a pair of metal patches are symmetrically added at the left side and the right side of one port of a microstrip line structure to form a third metal patch; connecting the third metal patch with the microstrip line through a load resistor; connecting the third metal patch with the metal ground through a metallized via through the dielectric substrate; the third metal patch, the load resistor and the added metallized via hole form a single-port energy high-pass device on the basis of the energy high-pass device.
In another embodiment, as shown in fig. 6, there is also provided a variation 2 of the basic energy high-pass device design structure: the variant 2 repeatedly constructs a structure composed of a metal patch, a diode, an inductor, a capacitor, a metallized via and connections thereof with a quarter wavelength interval in the longitudinal direction of the microstrip line, forming an energy high-pass device comprising a multi-level structure. The energy high-pass device with the variant 2 multi-stage structure can improve the overall bandwidth and other working performances.
In another embodiment, the design's energy high-pass device characteristics are simulated:
fig. 7 shows the simulation result of the S parameter of the L-band design structure, which is a secondary structure in variant 2, and realizes the high-pass characteristic of the energy of 1.28-1.83GHz, the low-energy reflection within the bandwidth is within-1 dB, and the high-energy reflection is below-15 dB.
FIG. 8 shows the simulation result of S parameters of a C-band design structure, wherein the C-band design structure is a secondary structure in a variant 2, and the high-pass characteristic of energy of 6.1-7.9GHz is realized, the low-energy reflection in the bandwidth is within-1 dB, and the high-energy reflection is below-10 dB.
FIG. 9 shows the simulation result of S parameters of an X-Ku band design structure, which is a three-stage structure in variant 2, and realizes the high-pass characteristic of 9.85-14.85GHz, the low-energy reflection within the bandwidth is within-1 dB, and the high-energy reflection is below-10 dB.
FIG. 10 is a graph showing the results of a 1.6GHz injection, showing that the energy high-pass device is almost totally reflective at lower input power; as the injection energy increases, the reflection gradually decreases and the transmitted power increases.
It should be understood that, although the steps in the flowchart of fig. 1 are shown in sequence as indicated by the arrows, the steps are not necessarily performed in sequence as indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least some of the steps in fig. 1 may include multiple sub-steps or stages that are not necessarily performed at the same time, but may be performed at different times, nor do the order in which the sub-steps or stages are performed necessarily performed in sequence, but may be performed alternately or alternately with at least a portion of other steps or sub-steps of other steps.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples merely represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the invention. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (7)
1. A method of energy high-pass device design, the method comprising:
symmetrically constructing two metal patches on the left side and the right side of the microstrip line structure respectively; wherein the two metal patches on any side are a first metal patch and a second metal patch respectively; the microstrip line structure is composed of a metal ground positioned on the bottom surface, a medium substrate positioned in the middle and a microstrip line positioned in the center above the medium substrate;
for the left side, the first metal patch is connected with the microstrip line through two parallel diodes with opposite directions, the first metal patch is connected with the second metal patch through an inductor, the second metal patch is connected with the microstrip line through a capacitor, the second metal patch is connected with the metal ground of the microstrip line structure through a dielectric substrate of the microstrip line structure through a metallized via hole, and the right side and the left side are symmetrically arranged in the same structure;
the microstrip line structure, the metal patches on the left side and the right side, the diode, the inductor, the capacitor and the metallized via hole are connected to form an energy high-pass device; the diode is in an off state during small signal transmission, so that the energy high-pass device is in a low-impedance series resonance state, and is in an on state during large signal transmission, so that the energy high-pass device is in a high-impedance parallel resonance state.
2. The method of claim 1, wherein the values of the diode and the inductor are determined by a desired operating frequency band such that the series resonant frequency point of the energy high pass device is shifted into the desired operating frequency band.
3. The method of claim 1, wherein the capacitance is determined by a center frequency point of parallel resonance of the energy high pass device.
4. The method of claim 1, wherein the metal patch and the metallized via size are determined according to diode, capacitor, inductor package size designs.
5. The method according to claim 1, wherein the method further comprises:
based on the energy high-pass device, symmetrically adding a metal patch on the left side and the right side of one port of the microstrip line structure respectively to form a third metal patch;
for the left side, the third metal patch is connected with the microstrip line through a load resistor, the third metal patch is connected with the metal ground through a metallized via hole penetrating through the dielectric substrate, and the right side and the left side are symmetrically arranged in the same structure;
and forming a single-port energy high-pass device by the third metal patches on the left side and the right side, the load resistor and the added metallized via hole on the basis of the energy high-pass device.
6. The method according to claim 1, wherein the method further comprises:
and repeatedly constructing structures consisting of the metal patch, the diode, the inductor, the capacitor, the metallized via hole and connection thereof on the left side and the right side of the microstrip line at intervals of one quarter wavelength in the longitudinal direction, so as to form an energy high-pass device comprising a multi-stage structure.
7. The method of claim 1, wherein the energy high-pass device design for any frequency band from L to Ku band is achieved by adjusting the values of the diode, the capacitor, and the inductor.
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| CN202210737753.5A CN115101915B (en) | 2022-06-27 | 2022-06-27 | Design method of energy high-pass device |
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| CN202210737753.5A CN115101915B (en) | 2022-06-27 | 2022-06-27 | Design method of energy high-pass device |
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| CN115101915B true CN115101915B (en) | 2023-07-25 |
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2022
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