CN113759296A - Magnetoresistive sensor integrated circuit and method of manufacturing the same - Google Patents
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N50/10—Magnetoresistive devices
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Abstract
The embodiment of the invention discloses a magnetoresistive sensor integrated circuit and a manufacturing method thereof, wherein the magnetoresistive sensor integrated circuit comprises a substrate containing an IC circuit; a magnetoresistive film capable of sensing a magnetic field change and outputting an electrical signal indicative of the magnetic field change; an adhesive layer bonding the magnetoresistive film to the substrate; and the electrode part is positioned on the magnetoresistive film, the electrode part comprises at least two terminal electrodes and a short-circuit electrode positioned between the terminal electrodes, one ends of the terminal electrodes and the short-circuit electrode are in ohmic contact with the magnetoresistive film, the other ends of the terminal electrodes are electrically connected with a lead end of an IC circuit, and the IC circuit processes and operates an electric signal output from the magnetoresistive film to obtain a detection result. The invention belongs to the technical field of semiconductors. The integrated circuit of the magnetic resistance sensor has high sensitivity, low power consumption and low cost, and is suitable for large-scale production.
Description
Technical Field
The present disclosure relates to the field of semiconductor technology, and more particularly, to a magnetoresistive sensor integrated circuit and a method for manufacturing the same.
Background
A magnetoresistive sensor is one of a wide variety of sensors that can sense a change in a physical quantity related to a magnetic phenomenon and convert it into an electrical signal for detection, thereby directly or indirectly detecting physical information such as a magnitude, a direction, a displacement, an angle, and a current of a magnetic field. Therefore, the magnetic resistance sensor can be widely applied to the fields of information, motors, power electronics, energy management, automobiles, magnetic information reading and writing, industrial automatic control, biomedicine and the like. With the development of technology and information technology, people have made higher and higher requirements on the sensitivity, size, thermal stability, power consumption and the like of the magnetoresistive sensor.
The sensitivity of a magnetoresistive sensor is related to the compound semiconductor material from which the magnetoresistive film of the magnetoresistive sensor is fabricated. For example, it is desirable to increase the carrier mobility of a compound semiconductor material to improve magnetic induction sensitivity. Compound semiconductor materials for manufacturing the magnetoresistive film include GaAs, InSb, InAs, and the like. Semiconductor materials such as InSb are typically prepared by evaporation or heteroepitaxy. However, there is a high lattice mismatch between InSb semiconductor materials and foreign substrates. For example, when an InSb thin film is epitaxially grown on a GaAs substrate, there is a lattice mismatch ratio of 14%. Therefore, the mobility of the InSb semiconductor material film prepared by heteroepitaxy is not ideal under the condition of thin thickness, and the optimal mobility does not exceed 50000cm2/Vs。
On one hand, if the thickness of the semiconductor material film grown by heteroepitaxy is thin, the quality of the semiconductor material film is poor, the mobility is too low, and a high-sensitivity magnetoresistive sensor cannot be manufactured; on the other hand, if the thickness of the semiconductor material film is increased, the mobility is improved, but the input resistance of the magnetoresistive sensor manufactured at this time is reduced, which causes a problem such as an increase in power consumption.
Disclosure of Invention
In view of the foregoing, it is desirable to provide a magnetoresistive sensor integrated circuit with high sensitivity and low power consumption and a method of manufacturing the same.
In order to solve at least one of the above-mentioned problems occurring in the prior art, embodiments of the present invention provide a magnetoresistive sensor integrated circuit having high sensitivity, sensing a weak magnetic field change, and low power consumption and cost, and a method of manufacturing the same.
According to an aspect of the present application, there is provided a magnetoresistive sensor integrated circuit, including: a substrate including an IC circuit; a magnetoresistive film capable of sensing a magnetic field change and outputting an electrical signal indicative of the magnetic field change; an adhesive layer bonding the magnetoresistive film to the substrate; and the electrode part is positioned on the magnetoresistive film, the electrode part comprises at least two terminal electrodes and a short-circuit electrode positioned between the terminal electrodes, one ends of the terminal electrodes and the short-circuit electrode are in ohmic contact with the magnetoresistive film, the other ends of the terminal electrodes are electrically connected with a lead end of an IC circuit, and the IC circuit processes and operates an electric signal output from the magnetoresistive film to obtain a detection result.
In some embodiments, the magnetoresistive film includes a magnetoresistive portion formed by being spaced by the terminal electrode and the short-circuit electrode, the magnetoresistive portion sensing a change in magnetic field.
In some embodiments, the magnetoresistive film is prepared by: epitaxially growing a compound semiconductor film on a semiconductor single crystal substrate as a magnetic induction functional layer of a magnetoresistive sensor; coating an adhesive layer on at least one of the compound semiconductor film and the substrate, and bonding the compound semiconductor film and the substrate face to face via the adhesive layer; a part of the semiconductor single crystal substrate and the compound semiconductor film is selectively removed, and the magnetoresistive film is formed by a patterning process.
In some embodiments, the mobility of the magnetoresistive film with only the semiconductor single-crystal substrate removed is greater than 40000cm2and/Vs, the thickness of the magnetoresistive film is 500nm-10 μm.
In some embodiments, the mobility of the magnetoresistive film in which a semiconductor single-crystal substrate and a part of a compound semiconductor film are simultaneously removed is more than 50000cm2Vs and less than 78000cm2and/Vs, the thickness of the magnetoresistive film is 10nm-9 μm.
In some embodiments, the magnetoresistive film comprises InSb, GaAs, InAs, InGaAs, or InGaP; the adhesive layer comprises polyimide or epoxy.
In some embodiments, the lead terminals are disposed on a substrate, and an interconnection line electrically connecting the lead terminals with the electrode part is formed while the electrode part is etched and patterned by a photolithography process.
In some embodiments, the lead terminals are disposed on the substrate, and the lead terminals and the electrode part are electrically connected by wire bonding after the electrode part is etched and patterned by a photolithography process.
In some embodiments, the magnetoresistive sensor integrated circuit further comprises a protective layer covering the magnetoresistive film and at least a part of the electrode portion, wherein the protective layer comprises any one of a silicon nitride film, a silicon oxide film, an aluminum oxide film, a silicon oxynitride film, an epoxy resin, a silica gel, a silicon dioxide, and a polyimide film.
According to another aspect of the present application, there is provided a method of manufacturing a magnetoresistive sensor integrated circuit as in any of the above embodiments, the method comprising: providing a substrate containing an IC circuit; manufacturing a magnetoresistive film capable of inducing a magnetic field change and outputting an electric signal representing the magnetic field change; providing an adhesive layer to bond the magnetoresistive film to the substrate; and manufacturing an electrode part, wherein the electrode part is positioned on the magnetoresistive film, the electrode part comprises at least two terminal electrodes and a short-circuit electrode positioned between the terminal electrodes, one ends of the terminal electrodes and the short-circuit electrode are in ohmic contact with the magnetoresistive film, and the other ends of the terminal electrodes are electrically connected with a lead terminal of an IC circuit, and the IC circuit processes an electric signal output from the magnetoresistive film and performs operation to obtain a detection result.
Other objects and advantages of the present disclosure will become apparent from the following description of the embodiments of the present disclosure, which is made with reference to the accompanying drawings, and can assist in a comprehensive understanding of the present disclosure.
Drawings
These and/or other aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the preferred embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1A shows a cross-sectional schematic diagram of a magnetoresistive sensor integrated circuit according to an embodiment of the invention;
FIG. 1B illustrates a cross-sectional schematic diagram of a magnetoresistive sensor integrated circuit according to another embodiment of the invention;
fig. 2A shows a schematic cross-sectional structure of a compound semiconductor film heteroepitaxially grown with a magnetic induction function on a semiconductor single crystal substrate;
FIG. 2B is a schematic cross-sectional view of the structure of FIG. 2A after an adhesive layer has been applied and a substrate containing IC circuitry has been bonded;
FIG. 3A shows a pattern of a magnetoresistive film according to one embodiment of the invention;
FIG. 3B shows a diagram of an electrode portion according to one embodiment of the invention;
FIG. 3C shows a pattern formed by the electrode part of FIG. 3B being superimposed on the magnetoresistive film of FIG. 3A;
fig. 3D is an enlarged view of a portion a in fig. 3C.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be construed as limiting the invention.
The following embodiments of the present invention provide a magnetoresistive sensor integrated circuit and a method of manufacturing the magnetoresistive sensor integrated circuit, in which the magnetoresistive sensor integrated circuit has higher sensitivity and lower power consumption.
As shown in fig. 1A, a magnetoresistive sensor integrated circuit 100 of an embodiment of the present invention includes a substrate 10 including an IC (integrated circuit), an adhesive layer 20, a magnetoresistive film 30, and an electrode portion 40.
It is to be understood that the substrate 10 may be replaced with a substrate not including any IC circuit in some cases, and accordingly, only the IC circuit may be provided on another substrate. That is, the IC circuit may not be integrated on the substrate on which the magnetoresistive sensor is provided. In this case, the substrate not including any IC circuit may include a poly magnetic substrate, a ceramic substrate, a semiconductor substrate, a glass substrate, a plastic substrate, or a substrate of any material. In one example, the substrate without any IC circuitry may be selected to be a poly-magnetic substrate made of a ferrite material.
The adhesive layer 20 is disposed on one surface of the substrate 10 and may comprise any suitable adhesive material such as polyimide or epoxy, or any suitable photoresist.
The magnetoresistive film 30 is capable of inducing a magnetic field change to output an electrical signal indicative of the magnetic field change, and includes any suitable semiconductor thin-film material such as InSb, GaAs, InAs, InGaAs, or InGaP. The magnetoresistive film 30 is bonded to the substrate 10 by the adhesive layer 20 (e.g., via a bonder). In one example, the magnetoresistive film 30 and the substrate 10 are in an electrically insulated state of not conducting with each other.
The magnetoresistive film is an element that induces a change in magnetic field and outputs an electric signal indicating the change in magnetic field. Since the present invention is integrated with a substrate having an IC circuit, a magnetoresistive sensor integrated circuit is formed. The IC circuit is a circuit in which a plurality of circuit elements are formed on or in the substrate 10, and is a unit that performs a predetermined operation on a detection signal (electric signal) output from the magnetoresistive film 30. In the embodiment, the present invention interconnects and integrates an IC circuit and a compound semiconductor stack and the like on the same substrate by providing an adhesive layer.
In one example of the present invention, obtaining the magnetoresistive film 30 to realize a magnetoresistive sensor integrated circuit manufactured by the following manner has advantages of high sensitivity and low power consumption.
As shown in fig. 2A, a compound semiconductor film 60 is epitaxially grown on a semiconductor single crystal substrate 50. The compound semiconductor film 60 includes a first portion 61 of relatively poor quality grown first and a second portion 62 of relatively good quality grown subsequently. Here, the first portion 61 and the second portion 62 to be explained do not have a clear interface as shown in the drawing, and they are artificially divided into two portions only for the convenience of the following description.
As shown in fig. 2B, an adhesive layer 20 is coated on the second portion 62 of the compound semiconductor film 60 and bonded together with the substrate 10 through the adhesive layer 20; the semiconductor single-crystal substrate 50 and the first portion 61 of the compound semiconductor film 60 are removed, and a patterning process is employed to form the magnetoresistive film 30. In one example, the magnetoresistive film 30 is a design that includes a square wave pattern, as shown in FIG. 3A. It will be clear to those skilled in the art that other shapes of graphics may be provided as desired.
GaAs, InSb, InAs and the like which can be used for manufacturing compound semiconductor films have high mobility at room temperature, wherein the mobility of the InSb material at room temperature is the highest and can reach 78000cm2Vs and thus is considered to be a material suitable for a magnetoresistive film of a magnetoresistive sensor with high sensitivity.
In one embodiment of the present invention, there are two ways of preparing a compound semiconductor film such as InSb. One preparation method is to obtain a polycrystalline InSb film by evaporating an InSb material on a mica sheet or a silicon oxide substrate in an evaporation way. Although the InSb film prepared by the method has low manufacturing cost, the quality is poor, and the mobility is generally only 15000cm2Vs to 30000cm2Vs, the expected requirements for mobility for a magnetoresistive sensor with high sensitivity are not met. The other preparation method is to prepare the semi-insulating InSb monocrystal substrate by adopting a homoepitaxial growth method. In this way, a high-quality InSb single crystal film, that is, an InSb single crystal film having very high mobility can be obtained. However, as the semi-insulating InSb single crystal substrate is expensive, no method suitable for large-scale production and manufacture exists at present。
Therefore, in the manufacture of the magnetoresistive sensor, the fabrication is generally performed by heteroepitaxy, and therefore, other semiconductor single crystals such as GaAs substrates and Si substrates are used. Although these alternative semiconductor single crystal substrates are relatively inexpensive, they have a large lattice mismatch with InSb, which leads to a decrease in quality (high defect rate) of InSb single crystal films grown on such alternative semiconductor single crystal substrates, and a much lower mobility, typically 30000cm, than that of InSb single crystal films obtained on InSb single crystal substrates2Vs to 50000cm2Vs.
Since there is a large lattice mismatch between the InSb film and the semiconductor single crystal substrate, the InSb film grown from the beginning is poor in quality (e.g., high in defect rate) and very low in mobility. As the thickness of the InSb film material increases, the InSb film quality will continue to improve, thereby increasing mobility.
To reach higher than 50000cm2The mobility of/Vs generally requires that the growth thickness of the InSb film exceeds 1-2 μm, but since the InSb film thickness is very thick, the sheet resistance of the InSb film is reduced, and thus the input resistance of the magnetoresistive sensor manufactured thereby is reduced, which leads to an increase in power consumption of the entire magnetoresistive sensor.
See document Oh et al, "Journal of Applied Physics", volume 66, 10 months 1989, 3618-.
It is described that if an InSb film is formed on a GaAs, InP substrate, there is a large lattice mismatch between the substrate and the InSb film, and therefore a large number of misfit dislocations are present in the formed InSb film, and these dislocations and defects generate residual electrons, significantly lowering carrier mobility.
In general, crystal defects of the thin film caused by mismatch with the substrate are conspicuous near the interface of the substrate. Although the density of crystal defects is gradually reduced along with the growth of the thin film, the concentration of crystal defects is high and the electron mobility is lowered. If a thin film of several micrometers is formed, the influence of defects in the vicinity of the interface becomes very small, but such a solution is not only impractical in manufacturing a device, but also causes problems such as reduction in resistance due to the film thickness, increase in power consumption, and the like.
In order to solve this problem, the following methods are proposed: a buffer layer for alleviating lattice mismatch is grown on a GaAs substrate, and high-resistance Al is usedxIn1-xSb (x.gtoreq.0.07) was used to fabricate the above buffer layer, but this was still insufficient in terms of the overall film thickness and mobility of the InSb film (see Liu et al, "Journal of vacuum Science)&Technology B "volume 14, 1996 month 5, page 2339-.
In the present invention, the mobility of the magnetoresistive film 30 prepared by the process described in fig. 2A and 2B with only the semiconductor single-crystal substrate 50 removed is more than 40000cm2Vs and a thickness of 500nm to 10 μm. Preferably, the mobility of the magnetoresistive film 30 in which the semiconductor single-crystal substrate 50 and a part of the compound semiconductor film 61 are simultaneously removed is more than 50000cm2Vs and less than 78000cm2Vs, and the sheet resistance of the magnetoresistive film 30 can be selectively increased to a target value by etching the thickness of the magnetoresistive film to 10nm-9 μm.
As described above, in the present invention, the first portion 61 of the compound semiconductor film 60 of poor quality grown on the semiconductor single-crystal substrate 50 is etched away, and therefore the mobility of the compound semiconductor film 60 can be made at least more than 50000cm2/Vs, preferably greater than 60000cm2Vs. In summary, the method of the present invention can select the compound semiconductor film 60 having an appropriate mobility and thickness in consideration of the thickness and the sheet resistance of the compound semiconductor film 60. That is, the embodiments of the present invention do not need to eliminate the problem of lattice mismatch ratio of the substrate and the compound semiconductor film, thereby allowing a magnetoresistive sensor to be manufactured based on a high-mobility compound semiconductor film with good crystallinity.
Embodiments of the present invention break through the limitation of film thickness, and can set the film thickness as needed while ensuring high mobility. For example, after a compound semiconductor film of high quality is grown in a sufficient thickness in a heteroepitaxial growth process, and then the compound semiconductor film is bonded to a substrate via an adhesive layer, a semiconductor single crystal substrate, a part of the compound semiconductor film is removed, and after etching of the semiconductor material film, a desired film thickness is obtained. Embodiments of the present invention are therefore simple in process, low in cost, and provide a solution to the relative contradiction between mobility and sheet resistance.
In one example, the magnetoresistive film 30 is provided with an electrode portion 40 on (e.g., an upper surface and/or a side surface). The electrode portion 40 includes at least two terminal electrodes 42 and a shorting electrode 44 located between the terminal electrodes 42. One end of the terminal electrode 42 forms ohmic contact with the magnetoresistive film 30, and the other end of the terminal electrode 42 is electrically connected to the lead terminal 22 of the IC circuit to electrically connect the magnetoresistive film 30 to the IC circuit. One end of the short-circuit electrode 44 is brought into electrical contact with the magnetoresistive film 30 to increase the magnetoresistive effect.
In one example, the electrode portion 40 includes two terminal electrodes 42 and three shorting electrodes 44 between the two terminal electrodes 42. However, it is clear to those skilled in the art that the embodiments of the present invention are not limited thereto, and other numbers of the shorting electrodes 44 may be provided, for example, one, two, four or more; or a larger number of terminal electrodes 42, for example, three, four, five or more, may be provided with a desired number of shorting electrodes 44 disposed therebetween.
In the structure shown in fig. 1A, the lead terminal 22 is not covered with the adhesive layer 20, so the lead terminal 22 and the electrode portion 40 (specifically, the terminal electrode 42) can be electrically connected by the interconnection line 24 formed simultaneously with the electrode portion 40, thereby communicating the IC detection circuit. In another example, the lead terminals 22 are covered by the adhesive layer 20, the lead terminals 22 of the IC circuit in the substrate 10 may be exposed by a photolithography process or other suitable process, and the lead terminals 22 and the electrode portion 40 may be electrically connected by the interconnection lines 24 formed simultaneously with the electrode portion 40 to communicate with the IC detection circuit.
In another alternative example, as shown in fig. 1B, the lead terminal 22 is not covered by the adhesive layer 20, so that the lead terminal 22 can be electrically connected to the electrode portion 40 (specifically, the terminal electrode 42) through the wire bonding 26 to communicate with the IC detection circuit. In another example, the leads 22 are covered by the adhesive layer 20, the leads 22 of the IC circuit in the substrate 10 can be exposed by photolithography or other suitable process, and the leads 22 can be electrically connected to the electrode portion 40 by wire bonding 26 to communicate with the IC detection circuit.
In one embodiment, the electrode part 40 is located on the surface of the magnetoresistive film 30, and a portion of the surface of the magnetoresistive film 30 is covered by the electrode part 40, and a portion not covered by the electrode part 40 is referred to as the magnetoresistive part 32. That is, the magnetic resistance portion 32 is formed by being spaced apart by the terminal electrode 42 and the short-circuit electrode 44, as shown in fig. 3D. The magnetic resistance portion 32 can induce a change in magnetic field under the action of an external magnetic field, and further generate and transmit an electric signal to the IC circuit.
In an alternative embodiment, magnetoresistive sensor integrated circuit 100 may also include a protective layer. The protective layer covers at least a part of the magnetoresistive film 30 and the electrode portion 40, but may cover all of the magnetoresistive film, the electrode portion, and the lead terminal at the same time. The protective layer includes any one of a silicon oxide film, an aluminum oxide film, a silicon nitride film, a silicon oxynitride film, an epoxy resin, a silica gel, a silicon dioxide film, and a polyimide film, or any combination thereof.
Referring to fig. 2A and 2B, a method of manufacturing a magnetoresistive sensor integrated circuit in the above embodiments is shown according to an embodiment of the present invention. The method comprises the following steps: preparing a compound semiconductor film; bonding the compound semiconductor film and a substrate including an IC circuit together with a binder; an electrode portion is formed on the compound semiconductor film, and the electrode portion is electrically connected to the substrate.
Specifically, as shown in fig. 2A, a compound semiconductor film 60 is grown on a semiconductor single crystal substrate 50 by an epitaxial method such as MOCVD (metal organic chemical vapor deposition) or MBE (molecular beam epitaxy). Since the lattice mismatch ratio between the substrate material and the compound semiconductor film is high, the compound semiconductor film (referred to as a first portion 61) grown at the beginning has poor crystal quality, high defect rate, and low mobility. With further growth of the semiconductor material film, the crystal quality of the compound semiconductor film (referred to as the second portion 62) is improved, and the mobility is higher. In one example, the semiconductor single crystal substrate may be any suitable single crystal substrate of GaAs, InP, GaN, Si, or the like. The compound semiconductor film may include binary, ternary, quaternary materials composed of In, Sb, As, Ga, P, and the like, such As GaAs, InAs, InSb, InGaAs, InGaP, InGaAsP, and the like, preferably an InSb film.
The following will exemplify InSb. In one example, the compound semiconductor film 60 has a thickness between 10nm-10 microns, preferably 500nm-3 microns, more preferably 800nm-2 microns. Taking InSb film as an example, the mobility is more than 40000cm2Vs, preferably greater than 50000cm2Vs, more preferably greater than 60000cm2/Vs。
As shown in fig. 2B, an adhesive is applied to the compound semiconductor film 60 (specifically, the second portion 62) to form an adhesive layer 20. In one example, a binder such as polyimide or epoxy is applied to the compound semiconductor film 60 by coating or taping. Subsequently, the compound semiconductor film 60 and the substrate 10 are bonded together face to face via the adhesive layer 20. The substrate 10 comprises any integrated circuit suitable for the specific application of the magnetoresistive sensor, and may be, for example, a rigid substrate or a flexible substrate comprising a suitable integrated circuit. Of course, it is also possible to apply an adhesive to the substrate 10 or to apply an adhesive to both the compound semiconductor film 60 and the substrate 10, and a person skilled in the art can select a material of the substrate 10 as needed, without being limited to the examples described herein.
In one embodiment, the method includes selectively removing the semiconductor single crystal substrate 50 to expose the back surface of the compound semiconductor film 60, i.e., to expose the first portion 61 of the compound semiconductor film 60. In one example, mechanical grinding or chemical etching may be used for removal. For example, mechanical polishing can be performed using conventional semiconductor polishing equipment. For example, the chemical etching may be performed using a mixed solution of phosphoric acid and hydrogen peroxide, or a hydrochloric acid solution. It will be appreciated by those skilled in the art that other alternatives known in the art may be used for mechanical grinding and chemical etching.
In one embodiment, the method includes removing the exposed first portion 61 of the compound semiconductor film 60 to leave a high quality second portion 62 of the compound semiconductor film 60. In one example, the exposed first portion 61 of the compound semiconductor film 60 may be removed by dry or wet etching, i.e., the first portion 61 that was previously grown on the semiconductor single crystal substrate 50 is removed, leaving the second portion 62 of the compound semiconductor film 60 of high quality (e.g., high mobility). For example, the dry etching may be ion beam etching or the like, and the wet etching may be etching using any suitable solution.
It will be appreciated by those skilled in the art that the mobility and film thickness of the compound semiconductor film 60 can be selected in accordance with the design requirements of the device using the approach of the present invention without suffering from the relatively contradictory effects between mobility and film thickness. The aspect of the present invention provides great flexibility in selection of the mobility and the thickness of the compound semiconductor film 60, so that the compound semiconductor film 60 having high mobility and thin thickness (high sheet resistance) can be obtained at the same time.
In one embodiment, the method includes patterning the etched compound semiconductor film 60 (e.g., the second portion 62) to form the magnetoresistive film 30. In one example, a mesa pattern of the magnetoresistive film 30 of the magnetoresistive sensor can be fabricated using photolithography. Specifically, the areas which are not protected by the photoresist are removed by adopting a dry etching or wet etching mode, so that a mesa pattern of the magnetoresistive sensor is formed. The magnetoresistive sensor depicted here is a square wave or serpentine shaped repeating pattern of cells (e.g., a continuously repeating pattern of bumps and dips, similar to the crenels on a great wall) from a top view, as shown in FIG. 3A.
In one example, the magnetoresistive film 30 is formed by a photolithography process. A photoresist pattern covering the compound semiconductor film 60 (e.g., the second portion 62) is first formed by applying a photoresist material and exposing and developing processes using a photolithography process. Then, using the pattern as a mask, a wet or dry etching process is used to remove the region of the compound semiconductor film 60 (e.g., the second portion 62) that is not masked by the photoresist pattern. Finally, the photoresist pattern is removed. Thereby, the magnetoresistive film 30 of, for example, a square waveform is formed.
In one embodiment, the electrode portion 40 and the interconnection line 24 are prepared on the magnetoresistive film 30 (e.g., upper surface). In one example, the metal electrode layer is formed by deposition such as electron beam evaporation or magnetron sputtering, and the material of the metal electrode layer may include Au, Ge, Ni, Ti, Cr, Cu, or their alloys; the electrode portion 40 (including the terminal electrode and the short-circuit electrode) and the interconnection line 24 are formed from the metal electrode layer by stripping or etching. In one example, the electrode part 40 is annealed, thereby forming a better ohmic contact between the electrode part 40 and the magnetoresistive film 30. Of course, the skilled person can select any suitable way to manufacture the electrode portions and to achieve the electrical connection, and the invention will not be reiterated here.
The pattern of the top view of the electrode portion described herein may be a plurality of repeated predetermined pattern patterns (for example, a plurality of units in which projections and depressions are continuously repeated, similar to the crenels on the great wall), as shown in fig. 3B.
Of course, those skilled in the art may set the number, shape and height of the electrode portions as desired, without being limited thereto, and for example, the shape of the electrode portions may be set to be square, circular, elliptical, stepped, trapezoidal, or the like.
In one embodiment, the method can connect the electrode portion 40 and the lead terminal 22 by the wire bond 26 shown in fig. 1B, which is not described in detail.
Fig. 3C shows a case where the electrode portion is located above the magnetoresistive film. As shown in fig. 3C, the magnetoresistive parts 32 have a rectangular array shape, and the short-circuit electrode 44 is sandwiched therebetween, whereby a signal of a change in magnetic field can be effectively induced. Fig. 3D more clearly shows a partial pattern of the magnetoresistive film and the electrode portion.
In one embodiment, the method includes preparing a protective layer on at least a portion (e.g., the entire surface) of the magnetoresistive film 30 and the electrode portion 40 in the magnetoresistive sensor integrated circuit 100.
The protective layer can prevent the magnetoresistive film 30 from being damaged in the subsequent process, and prevent water vapor, impurity particles, etc. from entering the magnetoresistive film 30. The protective layer includes any one of an aluminum oxide film, a silicon oxynitride film, a silicon nitride film, a silicon oxide film, an epoxy resin, a silica gel, silicon dioxide, and a polyimide film. The magnetoresistive sensor integrated circuit 100 can be formed on the magnetoresistive film 30 and on a portion other than the exposed region of the electrode portion 40 by Plasma Enhanced Chemical Vapor Deposition (PECVD), sputtering, or other conventional film forming means using a photoresist pattern as a mask, thereby obtaining high sensitivity and low power consumption.
With the embodiment of the present invention for fabricating the magnetoresistive sensor integrated circuit 100, if the compound semiconductor film of the magnetoresistive film 30 is made of InSb material, the mobility of the compound semiconductor film may exceed 60000cm2and/Vs, and the sheet resistance of the compound semiconductor film can be designed to a desired value, so that the InSb magnetoresistive sensor with high sensitivity and low power consumption can be finally obtained.
In summary, embodiments of the present invention provide a magnetoresistive sensor integrated circuit and a method for manufacturing the magnetoresistive sensor integrated circuit, which solve at least one aspect of the technical problems mentioned in the background section. Specifically, the obtained compound semiconductor film for manufacturing a magnetoresistive film has better crystallization property and higher mobility than those manufactured by the prior art. Furthermore, the overall film thickness can be designed as desired, for example, embodiments of the invention allow for reduced film thickness while ensuring high mobility. Therefore, the magnetoresistive sensor integrated circuit 100 of the embodiment of the invention has high sensitivity, can sense weak magnetic field change, and has low power consumption and low cost.
The invention also provides embodiments in accordance with the following aspects, in particular as follows:
aspect 1: a method of manufacturing a magnetoresistive sensor integrated circuit, the method comprising: providing a substrate containing an IC circuit; manufacturing a magnetoresistive film capable of inducing a magnetic field change and outputting an electric signal representing the magnetic field change; providing an adhesive layer to bond the magnetoresistive film to the substrate; and manufacturing an electrode part, wherein the electrode part is positioned on the magnetoresistive film, the electrode part comprises at least two terminal electrodes and a short-circuit electrode positioned between the terminal electrodes, one ends of the terminal electrodes and the short-circuit electrode are in ohmic contact with the magnetoresistive film, and the other ends of the terminal electrodes are electrically connected with a lead terminal of an IC circuit, and the IC circuit processes an electric signal output from the magnetoresistive film and performs operation to obtain a detection result.
Aspect 2: the method according to aspect 1, wherein manufacturing the magnetoresistive film comprises the steps of: epitaxially growing a compound semiconductor film on a semiconductor single crystal substrate as a magnetic induction functional layer of a magnetoresistive sensor; coating an adhesive layer on at least one of the compound semiconductor film and the substrate, and bonding the compound semiconductor film and the substrate face to face via the adhesive layer; a part of the semiconductor single crystal substrate and the compound semiconductor film is selectively removed, and the magnetoresistive film is formed by a patterning process.
Aspect 3: the method according to aspect 2, wherein only the semiconductor single-crystal substrate is removed, and the obtained magnetoresistive film has a mobility of more than 40000cm2and/Vs, the thickness of the magnetoresistive film is 500nm-10 μm.
Aspect 4: the method according to aspect 2, wherein the semiconductor single-crystal substrate and a part of the compound semiconductor film are removed simultaneously, and the obtained magnetoresistive film has a mobility of more than 50000cm2Vs and less than 78000cm2and/Vs, the thickness of the magnetoresistive film is 10nm-9 μm.
Aspect 5: the method of aspect 1, wherein the magnetoresistive film comprises InSb, GaAs, InAs, InGaAs, or InGaP.
Aspect 6: the method of aspect 1, wherein the bonding layer comprises polyimide or epoxy.
Aspect 7: the method according to any one of aspects 1 to 6, wherein the lead terminals are exposed on the surface of the substrate, and interconnection lines through which the lead terminals and the electrode portions are electrically connected are formed while the electrode portions are formed on the magnetoresistive film by etching, patterning by a photolithography process.
Aspect 8: the method according to any one of aspects 1 to 6, wherein the lead terminals are exposed on the surface of the substrate, electrode portions are formed on the magnetoresistive film by etching and patterning through a photolithography process, and the lead terminals are electrically connected to the electrode portions by wire bonding after the electrode portions are formed.
Aspect 9: the method according to any one of aspects 1 to 8, wherein the electrode part spaces the magnetoresistive film to form a magnetoresistive part that induces a change in magnetic field.
Aspect 10: the method according to any one of aspects 1 to 9, further comprising forming a protective layer on at least a part of the magnetoresistive film and the electrode part.
Aspect 11: the method of aspect 10, wherein the protective layer comprises any one of a silicon nitride film, a silicon oxide film, an aluminum oxide film, a silicon oxynitride film, an epoxy resin, a silica gel, a silicon dioxide, and a polyimide film.
Although a few embodiments of the present general inventive concept have been shown and described, it will be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the general inventive concept, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. A magnetoresistive sensor integrated circuit, comprising:
a substrate including an IC circuit;
a magnetoresistive film capable of sensing a magnetic field change and outputting an electrical signal indicative of the magnetic field change;
an adhesive layer bonding the magnetoresistive film to the substrate; and
an electrode portion located on the magnetoresistive film, the electrode portion including at least two terminal electrodes and a short-circuit electrode located between the terminal electrodes, one ends of the terminal electrodes and the short-circuit electrode being in ohmic contact with the magnetoresistive film, the other ends of the terminal electrodes being electrically connected to lead terminals of the IC circuit,
wherein the IC circuit processes and operates an electric signal output from the magnetoresistive film to obtain a detection result.
2. The magnetoresistive sensor integrated circuit of claim 1, wherein the magnetoresistive film comprises a magnetoresistive portion formed by a terminal electrode and a shorting electrode spaced apart, the magnetoresistive portion sensing a magnetic field change.
3. A magnetoresistive sensor integrated circuit as in claim 1 wherein the magnetoresistive film is prepared by:
epitaxially growing a compound semiconductor film on a semiconductor single crystal substrate as a magnetic induction functional layer of a magnetoresistive sensor;
coating an adhesive layer on at least one of the compound semiconductor film and the substrate, and bonding the compound semiconductor film and the substrate face to face via the adhesive layer;
a part of the semiconductor single crystal substrate and the compound semiconductor film is selectively removed, and the magnetoresistive film is formed by a patterning process.
4. The magnetoresistive sensor integrated circuit according to claim 3, wherein the mobility of the magnetoresistive film from which only the semiconductor single-crystal substrate is removed is greater than 40000cm2and/Vs, the thickness of the magnetoresistive film is 500nm-10 μm.
5. A magnetoresistive sensor integrated circuit according to claim 3, wherein the mobility of the magnetoresistive film with simultaneous removal of the semiconductor single-crystal substrate and a part of the compound semiconductor film is more than 50000cm2Vs and less than 78000cm2and/Vs, the thickness of the magnetoresistive film is 10nm-9 μm.
6. Magnetoresistive sensor integrated circuit according to one of claims 1 to 5,
the magnetoresistive film comprises InSb, GaAs, InAs, InGaAs or InGaP;
the adhesive layer comprises polyimide or epoxy.
7. Magnetoresistive sensor integrated circuit according to one of claims 1 to 5,
the lead terminals are disposed on the substrate, and interconnect lines are formed while the electrode portions are etched and patterned by a photolithography process, the interconnect lines electrically connecting the lead terminals and the electrode portions.
8. Magnetoresistive sensor integrated circuit according to one of claims 1 to 5,
the lead terminals are arranged on the substrate, and the lead terminals and the electrode parts are electrically connected in a wire bonding mode after the electrode parts are formed through etching and patterning of a photoetching process.
9. Magnetoresistive sensor integrated circuit according to one of claims 1 to 5,
the magnetoresistive sensor integrated circuit further includes a protective layer covering the magnetoresistive film and at least a part of the electrode portion,
wherein the protective layer includes any one of a silicon nitride film, a silicon oxide film, an aluminum oxide film, a silicon oxynitride film, an epoxy resin, a silica gel, a silicon dioxide, and a polyimide film.
10. A method of manufacturing a magnetoresistive sensor integrated circuit according to any of claims 1-9, the method comprising:
providing a substrate containing an IC circuit;
manufacturing a magnetoresistive film capable of inducing a magnetic field change and outputting an electric signal representing the magnetic field change;
providing an adhesive layer to bond the magnetoresistive film to the substrate; and
manufacturing an electrode part on the magnetoresistive film, the electrode part including at least two terminal electrodes and a short-circuit electrode between the terminal electrodes, one ends of the terminal electrodes and the short-circuit electrode being in ohmic contact with the magnetoresistive film, the other ends of the terminal electrodes being electrically connected to lead terminals of the IC circuit,
wherein the IC circuit processes and operates an electric signal output from the magnetoresistive film to obtain a detection result.
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