CN113758838A - Gas detection device - Google Patents
Gas detection device Download PDFInfo
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- CN113758838A CN113758838A CN202010493827.6A CN202010493827A CN113758838A CN 113758838 A CN113758838 A CN 113758838A CN 202010493827 A CN202010493827 A CN 202010493827A CN 113758838 A CN113758838 A CN 113758838A
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- 238000001514 detection method Methods 0.000 title claims abstract description 41
- 239000002245 particle Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 238000004806 packaging method and process Methods 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 125
- 238000005137 deposition process Methods 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 230000006835 compression Effects 0.000 claims description 10
- 238000007906 compression Methods 0.000 claims description 10
- 239000012530 fluid Substances 0.000 claims description 7
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 238000005538 encapsulation Methods 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 3
- 239000001569 carbon dioxide Substances 0.000 claims description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 241000700605 Viruses Species 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 238000012544 monitoring process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical compound S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 2
- 239000012855 volatile organic compound Substances 0.000 description 2
- -1 PM2.5 Chemical compound 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume, or surface-area of porous materials
- G01N15/02—Investigating particle size or size distribution
- G01N15/0205—Investigating particle size or size distribution by optical means, e.g. by light scattering, diffraction, holography or imaging
- G01N15/0211—Investigating a scatter or diffraction pattern
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume, or surface-area of porous materials
- G01N15/06—Investigating concentration of particle suspensions
-
- G01N15/075—
Abstract
A gas detection device manufactured by a semiconductor process includes: a substrate, a micro-electromechanical element, a light emitting element, a particle sensing element, a gas sensing element, a driving chip element and a packaging layer; the driving chip element respectively controls the driving operation of the micro-electromechanical element, the light-emitting element, the particle sensing element and the gas sensing element to drive the micro-electromechanical element to actuate and generate the gas transportation, the gas is guided into the gas detection device through the substrate gas inlet hole, a light spot of the gas is formed by a light source scattered by the light-emitting element, the particle sensing element receives detection data information of detecting a gas particle, the gas sensing element detects the detection data information of detecting a gas through the gas, and finally the gas is discharged from the packaging layer.
Description
Technical Field
The present invention relates to a gas detecting device, and more particularly, to a gas detecting device miniaturized by a semiconductor process.
Background
Modern people increasingly attach importance to the quality of gas around life, such as carbon monoxide, carbon dioxide, Volatile Organic Compounds (VOC), PM2.5, nitric oxide, sulfur monoxide, etc., and even particles contained in the gas can be exposed to the environment and affect human health, and even seriously harm life. Therefore, the quality of the environmental gas is regarded as good and bad, and how to monitor and avoid the remote monitoring is a subject which needs to be regarded urgently at present.
How to confirm the quality of gas, it is feasible to monitor the gas in the surrounding environment by using a gas sensor, and if the gas sensor can provide monitoring information in real time to warn people in the environment, the gas sensor can prevent or escape in real time, and avoid the influence and damage of human health caused by the exposure of gas in the environment.
Disclosure of Invention
The main objective of the present invention is to provide a gas detection device, which uses a semiconductor process to make a miniaturized structure for application in portable devices and light and small devices, and provides an effect of monitoring air quality at any time and any place in real time.
One broad aspect of the present disclosure is a gas detection apparatus, comprising: a substrate including a micro-electromechanical device region, a particle sensing region, a gas sensing region and a driving device region, wherein the micro-electromechanical device region is etched to form at least one air inlet; a micro-electromechanical element, an element formed by a semiconductor process, which is formed on the micro-electromechanical element area of the substrate by stacking and integrating and corresponds to the air inlet hole for actuating the transportation of a gas; a light emitting device formed by semiconductor process, which is formed by stacking and integrating the particle sensing region of the substrate for emitting a light beam; a particle sensing element formed by a semiconductor process, wherein the particle sensing area of the substrate is stacked and integrated on the particle sensing area and is arranged at an interval with the light-emitting element so as to receive a light spot formed by the light beam emitted by the light-emitting element irradiating the gas to form the detection of gas particles; a gas sensing element formed by semiconductor process, which is stacked and integrated on the gas sensing area of the substrate for detecting the gas passing through; a driving chip element formed by semiconductor process, which is stacked and integrated on the driving element region of the substrate and is electrically connected with the micro-electromechanical element, the light-emitting element, the particle sensing element and the gas sensing element, and comprises a microprocessor; and a packaging layer, which is packaged and positioned on the substrate, and forms a flow channel space above the micro-electromechanical element, the light-emitting element and the gas sensing element, and the packaging layer is etched to manufacture at least one air outlet and one light-transmitting hole; the microprocessor of the driving chip element respectively controls the driving operation of the micro-electromechanical element, the light-emitting element, the particle sensing element and the gas sensing element to drive the micro-electromechanical element to actuate and generate the gas transmission, the gas is guided into the flow channel space through the air inlet of the substrate and forms a light spot of the gas through a light source scattered by the light-emitting element, the particle sensing element receives detection data information of detecting a gas particle, the gas sensing element detects the detection data information of a gas for the gas passing through, and finally the gas is discharged through the air outlet of the packaging layer.
Drawings
Fig. 1 is a schematic cross-sectional view of a gas detection device according to the present invention.
Fig. 2A is a schematic cross-sectional view of a micro-electromechanical device of the gas detection apparatus of the present invention.
Fig. 2B is an exploded view of the mems device of the gas detecting apparatus.
Fig. 3A to 3C are schematic operation diagrams of the mems device of the gas detecting apparatus of the present invention.
Fig. 4 is a schematic view of an embodiment of the gas detection apparatus of the present invention.
Description of the reference numerals
1: base material
1 a: micro-electromechanical component area
1 b: particle sensing region
1 c: gas sensing region
1 d: drive assembly area
11: air intake
2: micro-electromechanical element
21: oxide layer
211: confluence channel
212: confluence chamber
22: vibration layer
221: metal layer
221 a: perforation
221 b: vibrating part
221 c: fixing part
222: second oxide layer
222 a: hollow hole
223: silicon wafer layer
223 a: actuating part
223 b: outer peripheral portion
223 c: connecting part
223 d: fluid channel
23: piezoelectric component
231: lower electrode layer
232: piezoelectric layer
233: insulating layer
234: upper electrode layer
A: compression chamber
3: light emitting element
L: light beam
4: particle sensing element
5: gas sensing element
6: driving chip element
7: encapsulation layer
71: air outlet
72: light hole
73: shade cover
C: dry film
Detailed Description
Exemplary embodiments that embody features and advantages of this disclosure are described in detail below in the detailed description. It will be understood that the present disclosure is capable of various modifications without departing from the scope of the disclosure, and that the description and drawings are to be regarded as illustrative in nature, and not as restrictive.
Referring to fig. 1, the present application provides a gas detecting apparatus manufactured by a semiconductor process, comprising: a substrate 1, a micro-electromechanical device 2, a light emitting device 3, a particle sensing device 4, a gas sensing device 5, a driver chip device 6 and a package layer 7.
The substrate 1 is a silicon substrate, and includes a micro-electromechanical device region 1a, a particle sensing region 1b, a gas sensing region 1c and a driving device region 1d, wherein the micro-electromechanical device region 1a is etched to form at least one air inlet 11.
As shown in fig. 2A and fig. 2B, the mems device 2 is stacked on the mems device area 1a of the substrate 1 in a semiconductor process, and is driven to transmit gas through the gas inlet 11 of the substrate 1, so that the gas is introduced from the gas inlet 11. The mems device 2 includes an oxide layer 21, a vibrating layer 22 and a piezoelectric element 23.
The oxide layer 21 is formed on the mems device area 1a of the substrate 1 by a deposition process, and a plurality of converging channels 211 and a converging chamber 212 are formed by an etching process, wherein the converging channels 211 are connected between the converging chamber 212 and the air inlet 11 of the substrate 1. The deposition process may be a Physical Vapor Deposition (PVD) process, a Chemical Vapor Deposition (CVD) process, or a combination thereof, but is not limited thereto. The following description of the deposition process will not be repeated.
The vibration layer 22 is formed by deposition process and is stacked on the oxide layer 21, and includes a metal layer 221, a second oxide layer 222 and a silicon wafer layer 223. The metal layer 221 is formed by a deposition process to be stacked on the oxide layer 21, and an etching process is used to form a through hole 221a, a vibrating portion 221b and a fixing portion 221c, wherein the etching process can be a wet etching process, a dry etching process or a combination thereof, but not limited thereto. The following description of the etching process will not be repeated.
The through hole 221a is formed in the center of the metal layer 221 by an etching process, the vibration portion 221b is formed and located in the peripheral region of the through hole 221a, and the fixing portion 221c is formed and located in the peripheral region of the metal layer 221.
The second oxide layer 222 is formed on the metal layer 221 by a deposition process, and a hollow hole 222a is formed by an etching process.
The silicon wafer layer 223 is deposited on the second oxide layer 222, and an actuator 223a, a peripheral portion 223b, a plurality of connecting portions 223c, and a plurality of fluid channels 223d are formed by etching. Wherein the actuating portion 223a is formed at the central portion, the outer peripheral portion 223b is formed around the outer periphery of the actuating portion 223a, the plurality of connecting portions 223c are respectively formed between the actuating portion 223a and the outer peripheral portion 223b, each fluid passage 223d is respectively formed between the actuating portion 223a and the outer peripheral portion 223b, and each connecting portion 223c is formed between each connecting portion 223d, and causes the silicon wafer layer 223 and the hollow hole 222a of the second oxide layer 222 to define a compression chamber a.
The piezoelectric element 23 is formed by deposition process and stacked on the actuating portion 223a of the silicon wafer layer 223, and includes a lower electrode layer 231, a piezoelectric layer 232, an insulating layer 233 and an upper electrode layer 234. The lower electrode layer 231 is formed by a deposition process to be superimposed on the actuating portion 223a of the silicon wafer layer 223, the piezoelectric layer 232 is formed by a deposition process to be superimposed on the lower electrode layer 231, the insulating layer 233 is formed by a deposition process to be superimposed on a part of the surface of the piezoelectric layer 232 and a part of the surface of the lower electrode layer 231, and the upper electrode layer 234 is formed to be superimposed on the insulating layer 233 and the rest of the surface of the piezoelectric layer 232 without the insulating layer 233, so as to be electrically connected with the piezoelectric layer 232.
As for how the micro-electromechanical device 2 performs the operation of actuating and transmitting the gas, please refer to fig. 3A, when the lower electrode layer 231 and the upper electrode layer 234 of the piezoelectric element 23 receive a driving signal (not shown), the piezoelectric layer 232 is driven to start to deform due to the inverse piezoelectric effect, so as to drive the actuating portion 223A of the silicon chip layer 223 to start to move, and when the piezoelectric element 23 drives the actuating portion 223A to move upwards to pull away the distance from the second oxide layer 222, the volume of the compression chamber a is increased to form a negative pressure, so that the gas outside the substrate 1 can be sucked into the plurality of collecting channels 211 of the oxide layer 21 and the collecting chamber 212 through the gas inlet 11. Referring to fig. 3B, when the actuator 223a is pulled by the piezoelectric element 23 to move upward, the vibration portion 221B of the metal layer 221 moves upward due to the resonance principle, and when the vibration portion 221B moves upward, the space of the compression chamber a is compressed and the gas in the compression chamber a is pushed to move toward the fluid channel 223d of the silicon wafer layer 223. As shown in fig. 3C, when the piezoelectric assembly 23 drives the actuating portion 223a of the silicon wafer layer 223 to move downward, the vibrating portion 221b of the silicon wafer layer 223 is also driven by the actuating portion 223a to move downward, so that the gas can be transmitted upward through the fluid channel 223d, and the gas synchronously compressing the confluence chamber 212 moves to the compression chamber a through the through hole 221a, and when the piezoelectric assembly 23 drives the actuating portion 223a to move upward, the volume of the compression chamber a is greatly increased, and the gas is further sucked into the compression chamber a with high suction force. The operations of fig. 3A to fig. 3C are repeated, the piezoelectric assembly 23 continuously drives the actuating portion 223A to move up and down, and simultaneously the vibrating portion 221b is linked to move up and down, so as to continuously draw the external gas by changing the internal pressure of the compression chamber a of the micro-electromechanical component 2, thereby completing the operation of actuating and transmitting the gas by the micro-electromechanical component 2.
Referring to fig. 1 and 4, the light emitting device 3 formed by semiconductor process can be formed by stacking and integrating the particle sensing region 1b of the substrate 1 to emit a light beam L; the particle sensing element 4 is formed by stacking and integrating a particle sensing region 1c of the substrate 1, and is spaced apart from the light emitting element 3 to receive a light spot formed by the light beam L emitted by the light emitting element 3 irradiating the gas, so as to detect the gas particles and generate a detection data information, wherein the detection data information generated by the particle sensing element 4 is a gas particle detection data information, in the present embodiment, the gas particles are one of PM10, PM2.5 and PM 1; the gas sensor 5 is formed by stacking and integrating the gas sensor area 1c of the substrate 1 in a semiconductor process, so as to detect the passing gas and generate a detection data message, wherein the detection data message generated by the gas sensor 5 is a gas detection data message, in the embodiment, the gas is one of formaldehyde, ammonia, carbon monoxide, carbon dioxide, oxygen, and ozone, or the detection data message generated by the gas sensor 5 may also be a virus detection data message, but not limited thereto; and the driving chip component 6 is formed by a semiconductor process, and includes a microprocessor (not shown), a battery (not shown) and a communicator (not shown), so that the driving chip component 6 can be stacked and integrated on the driving component region 1d of the substrate 1 and is electrically connected with the micro-electromechanical component 2, the light-emitting component 3, the particle sensing component 4 and the gas sensing component 5, the microprocessor of the driving chip component 6 controls the driving operations of the micro-electromechanical component 2, the light-emitting component 3, the particle sensing component 4 and the gas sensing component 5, respectively, and receives the detection data information output by the particle sensing component 4 and the gas sensing component 5 for calculation and output, the battery of the driving chip component 6 provides the power supply operation of the gas detection device, the communicator of the driving chip component 6 receives the detection data information output by the microprocessor for external transmission and connection with an external device (not shown), the communicator of the driving chip element 6 is connected with an external device by wireless transmission so that the external device can receive and send out notification.
Referring to fig. 1 and 4, the encapsulation layer 7 encapsulates the positioning substrate 1. In the embodiment, the package layer 7 is coated on the substrate 1 through a dry film C to be combined, positioned and sealed above the mems element 2, the light emitting element 3, the particle sensing element 4 and the gas sensing element 5, so that a flow channel space 8 is formed above the mems element 2, the light emitting element 3, the particle sensing element 4 and the gas sensing element 5, and the package layer 7 is etched to form at least one air outlet hole 71 and one light transmitting hole 72. In the present embodiment, the number of the air outlet holes 71 is 1, but not limited thereto. The light-transmitting hole 72 of the packaging layer 7 is used for the light beam L emitted by the light-emitting device 3 to irradiate and pass, and the packaging layer 7 is arranged above the light-transmitting hole 72 and packages a mask 73 for shielding the light beam L emitted by the light-emitting device 3, so as to prevent the light beam L from being directly reflected and influencing the detection precision of the particle sensing device 4, and the light beam L of the light-emitting device 3 is indirectly scattered by the packaging layer 7 to form a gas light spot by the light source, so that the particle sensing device 4 receives and detects the gas particles.
As shown in fig. 4, the gas detecting device of the present invention controls the driving operations of the micro-electromechanical device 2, the light emitting device 3, the particle sensing device 4 and the gas sensing device 5 by the driving chip device 6, and the micro-electromechanical device 2 is activated to generate a gas delivery, the gas is introduced into the flow channel space 8 through the gas inlet 11 and then discharged through the gas outlet 71 of the encapsulation layer 7, at this time, the gas passes through the light beam L of the light emitting device 3 and forms a gas light spot by the light source indirectly scattered by the encapsulation layer 7, the detected gas particles are received by the particle sensing device 4 and provided to the microprocessor of the driving chip device 6 for calculating and outputting the particle size and concentration detection data information of the gas particles, and the gas sensing device 5 detects the passing gas and generates the gas detection data information to the microprocessor of the driving chip device 6 for calculating and outputting, the communicator of the driving chip element 6 receives the detection data information output by the microprocessor and transmits the detection data information to an external device for receiving and sending out a notice.
In summary, the gas detection device provided by the present invention is manufactured with a miniaturized structure by a semiconductor process, so as to be applied to a portable device and a thin and small device, provide an effect of real-time monitoring air quality at any time and any place, and have great industrial applicability.
Various modifications may be made by those skilled in the art without departing from the scope of the invention as defined by the appended claims.
Claims (10)
1. A gas detection apparatus, comprising:
a substrate including a micro-electromechanical device region, a particle sensing region, a gas sensing region and a driving device region, wherein the micro-electromechanical device region is etched to form at least one air inlet;
a micro-electromechanical element, an element formed by a semiconductor process, which is formed on the micro-electromechanical element area of the substrate by stacking and integrating and corresponds to the air inlet hole for actuating the transportation of a gas;
a light emitting device formed by semiconductor process, which is formed by stacking and integrating the particle sensing region of the substrate for emitting a light beam;
a particle sensing element formed by a semiconductor process, wherein the particle sensing area of the substrate is stacked and integrated on the particle sensing area and is arranged at an interval with the light-emitting element so as to receive a light spot formed by the light beam emitted by the light-emitting element irradiating the gas to form the detection of gas particles;
a gas sensing element formed by semiconductor process, which is stacked and integrated on the gas sensing area of the substrate for detecting the gas passing through;
a driving chip element formed by semiconductor process, which is stacked and integrated on the driving element region of the substrate and is electrically connected with the micro-electromechanical element, the light-emitting element, the particle sensing element and the gas sensing element, and comprises a microprocessor; and
a packaging layer, which is packaged and positioned on the substrate, and forms a flow channel space above the micro-electromechanical element, the light-emitting element and the gas sensing element, and the packaging layer is etched to manufacture at least one air outlet and one light-transmitting hole;
the microprocessor of the driving chip element respectively controls the driving operation of the micro-electromechanical element, the light-emitting element, the particle sensing element and the gas sensing element to drive the micro-electromechanical element to actuate and generate the gas transmission, the gas is guided into the flow channel space through the air inlet of the substrate and forms a light spot of the gas through a light source scattered by the light-emitting element, the particle sensing element receives detection data information of detecting a gas particle, the gas sensing element detects the detection data information of a gas for the gas passing through, and finally the gas is discharged through the air outlet of the packaging layer.
2. The gas detection apparatus of claim 1, wherein the microelectromechanical component comprises:
an oxide layer formed by deposition process on the MEMS element region of the substrate and having multiple converging channels and a converging chamber formed by etching process, wherein the converging channels are communicated between the converging chamber and the air inlet of the substrate;
a vibration layer formed by deposition process and superposed on the oxide layer, comprising:
a metal layer formed by deposition process and superposed on the oxide layer, and an etching process to form a through hole, a vibration part and a fixing part, wherein the through hole is formed at the center of the metal layer, the vibration part is formed at the peripheral area of the through hole, and the fixing part is formed at the peripheral area of the metal layer;
a second oxide layer formed on the metal layer by deposition process and having a hollow hole formed by etching process;
a silicon wafer layer formed by deposition process and superposed on the second oxide layer, and an actuating portion, an outer peripheral portion, a plurality of connecting portions and a plurality of fluid channels formed by etching process, wherein the actuating portion is formed at the central portion, the outer peripheral portion surrounds the actuating portion, the plurality of connecting portions are respectively connected between the actuating portion and the outer peripheral portion, each fluid channel is respectively connected between the actuating portion and the outer peripheral portion and between each connecting portion, and a compression chamber is defined by the silicon wafer layer and the hollow hole of the second oxide layer; and
the piezoelectric component is generated and superposed on the actuating part of the silicon wafer layer by a deposition process and comprises a lower electrode layer, a piezoelectric layer, an insulating layer and an upper electrode layer, wherein the piezoelectric layer is generated and superposed on the lower electrode layer by the deposition process, the insulating layer is generated and superposed on part of the surface of the piezoelectric layer and part of the surface of the lower electrode layer by the deposition process, and the upper electrode layer is generated and superposed on the insulating layer and the rest surfaces of the piezoelectric layer, which are not provided with the insulating layer, by the deposition process and is used for being electrically connected with the piezoelectric layer.
3. The gas detection device of claim 1, wherein the driver chip component comprises a battery that provides power to the device for operation.
4. The gas detecting apparatus according to claim 1, wherein the microprocessor of the driving chip element receives the detected data information of the gas particles detected by the particle sensing element and the detected data information of the gas detected by the gas sensing element for calculation and output, and the driving chip element comprises a communicator, the communicator receives the detected data information of the gas particles and the detected data information of the gas output by the microprocessor and transmits them to an external apparatus for the external apparatus to receive and send out notification.
5. The gas detection apparatus of claim 4, wherein the communicator is connected to the external device via wireless transmission.
6. The gas detecting device according to claim 1, wherein the gas particulate is one of PM10, PM2.5 and PM 1.
7. The gas detecting device according to claim 1, wherein the gas is one of formaldehyde, ammonia, carbon monoxide, carbon dioxide, oxygen and ozone.
8. The gas detection apparatus of claim 1, wherein the gas detection data message is a virus detection data message.
9. The gas detecting device according to claim 1, wherein the light hole of the encapsulating layer is for the light beam emitted by the light emitting element to pass through, and the encapsulating layer encapsulates a mask above the light hole for shielding the light beam emitted by the light emitting element.
10. The gas detecting device according to claim 1, wherein the encapsulation layer is coated on the substrate by a dry film to be bonded, positioned and sealed over the micro-electromechanical device, the light emitting device and the gas sensing device.
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| CN202010493827.6A CN113758838A (en) | 2020-06-03 | 2020-06-03 | Gas detection device |
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| CN202010493827.6A CN113758838A (en) | 2020-06-03 | 2020-06-03 | Gas detection device |
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Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH046438A (en) * | 1990-04-25 | 1992-01-10 | Rion Co Ltd | Particulate meter |
| CN1707270A (en) * | 2004-06-08 | 2005-12-14 | 亚洲光学股份有限公司 | Environment measuring apparatus |
| CN107003163A (en) * | 2014-12-11 | 2017-08-01 | 英特尔公司 | To the synthesizing jet-flow of sensing system transfer controlled stream |
| TWM553862U (en) * | 2017-08-21 | 2018-01-01 | Microjet Technology Co Ltd | Portable electronic device with actuating-sensing module |
| TWM554945U (en) * | 2017-08-31 | 2018-02-01 | Microjet Technology Co Ltd | Gas delivery device |
| TWM561788U (en) * | 2018-01-26 | 2018-06-11 | Microjet Technology Co Ltd | Gas detecting device |
| TWM568360U (en) * | 2018-05-18 | 2018-10-11 | 研能科技股份有限公司 | Gas detection device |
| DE102017212786A1 (en) * | 2017-07-25 | 2019-01-31 | Robert Bosch Gmbh | Sensor arrangement for detecting particles of a measuring gas in a measuring gas chamber and method for producing a sensor arrangement |
| US20190187035A1 (en) * | 2017-12-15 | 2019-06-20 | Microjet Technology Co., Ltd. | Particulate matter measuring device |
| CN110018091A (en) * | 2018-01-08 | 2019-07-16 | 研能科技股份有限公司 | Gas-detecting device |
| CN110082266A (en) * | 2018-01-26 | 2019-08-02 | 研能科技股份有限公司 | Gas-detecting device |
| CN110501455A (en) * | 2018-05-18 | 2019-11-26 | 研能科技股份有限公司 | Gas-detecting device |
| CN110873681A (en) * | 2018-08-30 | 2020-03-10 | 研能科技股份有限公司 | Mobile device with particle detection module |
| CN110873680A (en) * | 2018-08-30 | 2020-03-10 | 研能科技股份有限公司 | Particle detection module |
| CN111044677A (en) * | 2018-10-12 | 2020-04-21 | 研能科技股份有限公司 | Health monitoring device |
-
2020
- 2020-06-03 CN CN202010493827.6A patent/CN113758838A/en active Pending
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH046438A (en) * | 1990-04-25 | 1992-01-10 | Rion Co Ltd | Particulate meter |
| CN1707270A (en) * | 2004-06-08 | 2005-12-14 | 亚洲光学股份有限公司 | Environment measuring apparatus |
| CN107003163A (en) * | 2014-12-11 | 2017-08-01 | 英特尔公司 | To the synthesizing jet-flow of sensing system transfer controlled stream |
| DE102017212786A1 (en) * | 2017-07-25 | 2019-01-31 | Robert Bosch Gmbh | Sensor arrangement for detecting particles of a measuring gas in a measuring gas chamber and method for producing a sensor arrangement |
| TWM553862U (en) * | 2017-08-21 | 2018-01-01 | Microjet Technology Co Ltd | Portable electronic device with actuating-sensing module |
| TWM554945U (en) * | 2017-08-31 | 2018-02-01 | Microjet Technology Co Ltd | Gas delivery device |
| US20190187035A1 (en) * | 2017-12-15 | 2019-06-20 | Microjet Technology Co., Ltd. | Particulate matter measuring device |
| CN110018091A (en) * | 2018-01-08 | 2019-07-16 | 研能科技股份有限公司 | Gas-detecting device |
| TWM561788U (en) * | 2018-01-26 | 2018-06-11 | Microjet Technology Co Ltd | Gas detecting device |
| CN110082266A (en) * | 2018-01-26 | 2019-08-02 | 研能科技股份有限公司 | Gas-detecting device |
| TWM568360U (en) * | 2018-05-18 | 2018-10-11 | 研能科技股份有限公司 | Gas detection device |
| CN110501455A (en) * | 2018-05-18 | 2019-11-26 | 研能科技股份有限公司 | Gas-detecting device |
| CN110873681A (en) * | 2018-08-30 | 2020-03-10 | 研能科技股份有限公司 | Mobile device with particle detection module |
| CN110873680A (en) * | 2018-08-30 | 2020-03-10 | 研能科技股份有限公司 | Particle detection module |
| CN111044677A (en) * | 2018-10-12 | 2020-04-21 | 研能科技股份有限公司 | Health monitoring device |
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