CN113755811A - Deposition apparatus - Google Patents

Deposition apparatus Download PDF

Info

Publication number
CN113755811A
CN113755811A CN202110612779.2A CN202110612779A CN113755811A CN 113755811 A CN113755811 A CN 113755811A CN 202110612779 A CN202110612779 A CN 202110612779A CN 113755811 A CN113755811 A CN 113755811A
Authority
CN
China
Prior art keywords
crucible
deposition
nozzle
nozzle hole
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110612779.2A
Other languages
Chinese (zh)
Inventor
韩种馩
姜贤圭
朴盛钟
韩尚辰
徐东均
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
Original Assignee
Samsung Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Display Co Ltd filed Critical Samsung Display Co Ltd
Publication of CN113755811A publication Critical patent/CN113755811A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

According to an embodiment of the present invention, a deposition apparatus includes: a housing; a nozzle provided on the housing and defining a first nozzle hole and a second nozzle hole adjacent to the first nozzle hole; a crucible provided inside the housing and including a first crucible containing a first deposition material and a second crucible containing a second deposition material; and a connecting portion including a first tube provided between the first nozzle hole and the first crucible and a second tube provided between the second nozzle hole and the second crucible.

Description

Deposition apparatus
Technical Field
The present invention relates to a deposition apparatus, and more particularly, to a deposition apparatus for depositing an organic substance on a substrate of a display device (display device).
Background
The display device may include a plurality of pixels. Each of the plurality of pixels may include a light emitting layer disposed between opposing electrodes. The electrode and the light-emitting layer can be formed by various methods, and one of the methods may be a vacuum deposition method in which a predetermined substance is deposited in a vacuum atmosphere to form a thin film. The vacuum deposition method may be performed by: a mask is disposed between a deposition source and a target substrate inside a chamber, and deposition substances of the deposition source are sublimated or vaporized to be deposited on the target substrate.
Disclosure of Invention
An object of the present invention is to provide a deposition apparatus capable of uniformly depositing different deposition substances on a target substrate.
According to an embodiment of the present invention, a deposition apparatus includes: a housing; a nozzle provided on the housing and defining a first nozzle hole and a second nozzle hole adjacent to the first nozzle hole; a crucible provided inside the housing and including a first crucible containing a first deposition material and a second crucible containing a second deposition material; and a connecting portion including a first tube provided between the first nozzle hole and the first crucible and a second tube provided between the second nozzle hole and the second crucible.
According to an embodiment of the present invention, a deposition apparatus includes: a housing extending in a first direction and moving in a second direction crossing the first direction; a plurality of first nozzles and a plurality of second nozzles disposed on the housing and alternately disposed along the first direction; a crucible having a first crucible for containing a first deposition material and a second crucible for containing a second deposition material; and a connecting portion including a plurality of first tubes provided between the first crucible and the first nozzle, and a plurality of second tubes provided between the second crucible and the second nozzle.
According to an embodiment of the present invention, a deposition apparatus includes: a housing; a nozzle disposed on the housing and defining a nozzle hole; a crucible provided inside the housing and including a first crucible containing a first deposition material and a second crucible containing a second deposition material; and a connecting portion including a first tube provided between the nozzle hole and the first crucible and a second tube provided between the nozzle hole and the second crucible.
According to the embodiments of the present invention, the first nozzle hole for discharging the first deposition substance and the second nozzle hole for discharging the second deposition substance are adjacently disposed on a single nozzle, and the first deposition substance and the second deposition substance can be supplied to the subject substrate in a uniformly mixed state.
Drawings
Fig. 1 is a diagram schematically illustrating a deposition apparatus according to an embodiment of the present invention.
Fig. 2 is a diagram schematically illustrating a manner in which the deposition source shown in fig. 1 moves.
Fig. 3 is a perspective view schematically illustrating the deposition source shown in fig. 2.
Fig. 4 is a schematic sectional view taken along the line I-I' shown in fig. 3.
Fig. 5 is a perspective view schematically illustrating a deposition source of a deposition apparatus according to an embodiment of the present invention.
Fig. 6 is a sectional view schematically illustrating a sectional shape along the line II-II' shown in fig. 5.
Fig. 7 is a sectional view schematically illustrating a sectional shape along the line III-III' shown in fig. 5.
Fig. 8 is a sectional view schematically illustrating a deposition source of a deposition apparatus according to an embodiment of the present invention.
Fig. 9 is a perspective view schematically illustrating a deposition source of a deposition apparatus according to an embodiment of the present invention.
Fig. 10 is a sectional view schematically illustrating a deposition source of a deposition apparatus according to an embodiment of the present invention.
Detailed Description
In the specification, when a structural element (or a region, a layer, a portion, or the like) is referred to as being "located on", "connected to", or "coupled to" over "other structural element, it means that a third structural element may be directly provided/connected/coupled to or coupled to the other structural element or may be provided therebetween.
Like reference numerals refer to like structural elements. In the drawings, the thickness, ratio, and size of the constituent elements are exaggerated for effective explanation of technical contents.
"and/or" includes all combinations of more than one defined by the associated structures.
Although the terms first, second, etc. may be used to describe various elements, these elements should not be limited by these terms. The terms are used only for the purpose of distinguishing one structural element from other structural elements. For example, a first structural element may be termed a second structural element, and, similarly, a second structural element may be termed a first structural element, without departing from the scope of the present invention. With respect to a singular expression, the singular expression includes a plural expression as long as other meanings are not explicitly expressed in the context.
Terms such as "below", "on the lower side", "above", and "on the upper side" are used to explain the relationship of the structures shown in the drawings. The terms are relative concepts, and are described with reference to directions shown in the drawings.
Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Further, terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with meanings in the context of the relevant art. Are to be construed in a non-limiting sense as meaning either ideal or excessively formal.
It will be understood that the terms "comprises" or "comprising," or any other variation thereof, are intended to specify the presence of stated features, integers, steps, operations, elements, components, or groups thereof, and are not intended to preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or groups thereof.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Fig. 1 is a diagram schematically illustrating a deposition apparatus according to an embodiment of the present invention.
Referring to fig. 1, the deposition device DD may deposit a deposition substance onto the subject substrate SUB. For example, the target substrate SUB may be a substrate of a display device (display device). The deposition material may comprise organic matter. The deposition substance may be deposited on the subject substrate SUB to form the organic light emitting element OLED.
According to an embodiment of the present invention, the deposition device DD may include a chamber CH, a moving plate MP, a mask assembly MK, and a deposition source SO.
The chamber CH may have a sealed space therein. The moving plate MP, the mask assembly MK, and the deposition source SO may be disposed in the inner space of the chamber CH. The chamber CH may be provided with more than one gate GA. For example, the gate GA may be provided at a sidewall of the chamber CH. The gate GA can open and close the chamber CH. For example, the target substrate SUB may enter and exit the chamber CH through the gate GA.
The moving plate MP is movable within the chamber CH. For example, the moving plate MP may be moved in the first direction DR1, the second direction DR2, and the third direction DR3 in a state that the upper portion thereof is connected to the ceiling of the cavity CH. In the present specification, the first direction DR1 and the second direction DR2 intersecting the first direction DR1 substantially define a horizontal direction, and the third direction DR3 defines a vertical direction.
The object substrate SUB may be disposed at a lower portion of the moving plate MP. The moving plate MP can hold the target substrate SUB by electrostatic force or magnetic force. The moving plate MP may move the subject substrate SUB within the chamber CH.
The mask assembly MK may be disposed between the target substrate SUB and a deposition source SO described later. The mask assembly MK may overlap the subject substrate SUB. Mask assembly MK may be supported by a support SU disposed inside chamber CH.
A plurality of openings OP may be defined on the mask assembly MK. The deposition substance discharged from the deposition device DD may be deposited on the subject substrate SUB through the opening OP.
The deposition source SO may be disposed below the mask assembly MK. The deposition source SO may internally house a deposition substance. The deposition source SO may vaporize or sublimate the deposition material contained therein to supply the deposition material to the target substrate SUB.
Fig. 2 is a diagram schematically illustrating a manner in which the deposition source shown in fig. 1 moves. For convenience of explanation, the target substrate SUB and the deposition source SO shown in fig. 1 are illustrated in fig. 2, and the remaining structure is not illustrated.
Referring to fig. 2, the target substrate SUB may be disposed above the deposition source SO. One side of the object substrate SUB may be opposite to the deposition source SO. The object substrate SUB may include two sides extending in the first direction DR1 and two sides extending in the second direction DR 2.
The object substrate SUB may have a quadrangular shape when viewed from above. In the present specification, the meaning of "in plan view" refers to a state viewed from the third direction DR 3.
The deposition source SO may be spaced apart from the target substrate SUB. For example, the deposition source SO may be spaced apart from the subject substrate SUB by a distance TS in the third direction DR 3. The deposition source SO may extend in a first direction DR 1. The deposition source SO may move in the second direction DR 2.
According to an embodiment of the present invention, in a state where the object substrate SUB is fixed, the deposition source SO may supply the deposition substance to one side of the object substrate SUB while moving in the second direction DR 2. However, the present invention is not limited thereto. For example, the deposition substance may be deposited by moving the target substrate SUB in the second direction DR2 while the deposition source SO is fixed. In this case, the target substrate SUB may be moved by the moving plate MP shown in fig. 1.
The deposition source SO may supply deposition substances including different substances to the subject substrate SUB. The uniform mixing of the deposition substance can improve characteristics such as color coordinates, light efficiency, driving voltage, and lifetime of the display device. The deposition source SO according to an embodiment of the present invention has a structure that can provide a uniformly mixed deposition substance to the target substrate SUB.
The structure of the deposition source SO of the present invention will be described in more detail below.
Fig. 3 is a perspective view schematically illustrating the deposition source shown in fig. 2. Fig. 4 is a schematic sectional view taken along the line I-I' shown in fig. 3.
Referring to fig. 3 and 4, the deposition source SO according to an embodiment of the present invention includes a housing HO, a plurality of nozzles NO, a crucible CB, and a connection part.
According to an embodiment of the invention, the housing HO may form an overall profile of the deposition source SO. The housing HO may extend in a first direction DR 1. The housing HO may include a main body BO and a cover CV.
The main body BO may have an empty space therein. A crucible CB described later may be provided inside the main body BO. The upper portion of the main body BO may be opened. The cover CV may be coupled to the upper portion of the main body BO. The hood CV may be separable from the main body BO.
A plurality of nozzles NO may be provided on the housing HO. For example, the nozzle NO may be provided on the cap CV of the housing HO. The nozzle NO may be made separately from the housing HO and bonded to the cap CV. However, the nozzle NO is not limited to this, and may be formed integrally with the cap CV.
The nozzles NO may be aligned in the first direction DR 1. The nozzles NO adjacent in the first direction DR1 may be spaced apart from each other. In fig. 3, ten nozzles NO are shown on the housing HO, but this is only a schematic illustration and the number of nozzles NO may be different.
According to an embodiment of the invention, a first nozzle hole NH1 and a second nozzle hole NH2 may be defined on each nozzle NO. The first nozzle hole NH1 may be adjacent to the second nozzle hole NH 2. For example, the second nozzle hole NH2 may be disposed beside the first nozzle hole NH1 in the second direction DR 2. The distance between the first nozzle hole NH1 and the second nozzle hole NH2 may be substantially close to "0" with reference to the second direction DR 2. The first nozzle hole NH1 may overlap with the second nozzle hole NH2 when viewed from the second direction DR 2.
The first nozzle hole NH1 and the second nozzle hole NH2 may each have a circular shape when viewed in plan. However, the first nozzle hole NH1 and the second nozzle hole NH2 may be deformed into various shapes such as a polygon or an ellipse.
The diameters of the first nozzle hole NH1 and the second nozzle hole NH2 may be the same when viewed in plan. However, the diameters of the first nozzle hole NH1 and the second nozzle hole NH2 may be the same or different depending on the kind of the deposition substance, the amount of the discharged substance, and the like.
According to an embodiment of the invention, a crucible CB may be disposed inside the housing HO. The crucible CB may include a first crucible CB1 and a second crucible CB 2. The first crucible CB1 and the second crucible CB2 may be disposed inside the main body BO of the housing HO. The second crucible CB2 may be spaced apart from the first crucible CB1 in the second direction DR 2. The first crucible CB1 and the second crucible CB2 may respectively extend long in the first direction DR1 corresponding to the shape of the body BO.
The first crucible CB1 may contain a first deposition substance DM 1. For example, the first deposition material DM1 may be a host material. The second crucible CB2 may contain a second deposition substance DM 2. For example, the second deposition species DM2 may be a dopant species. The first crucible CB1 and the second crucible CB2 are illustrated in fig. 4 as being the same size, but the first crucible CB1 and the second crucible CB2 may be different in size from each other.
According to an embodiment of the present invention, the connection part may connect the nozzle NO and the crucible CB. For example, the connection portion may include a first pipe TU1 and a second pipe TU 2. The first tube TU1 may be disposed between the first nozzle hole NH1 and the first crucible CB 1. The first pipe TU1 may have a pipe shape with a hollow formed inside.
For example, a first pipe TU1 may include a first portion PO1, a second portion PO2, and a third portion PO 3. One end of the first part PO1 may be connected to a first crucible CB 1. The first portion PO1 may extend in a third direction DR 3. The first part PO1 may be arranged inside the housing HO.
The second part PO2 may extend from the first part PO 1. The second part PO2 may be inclined at a prescribed angle with respect to the second direction DR 2. For example, the second part PO2 may be inclined to the right side toward the upper part with reference to fig. 4. The second part PO2 may be arranged inside the nozzle NO.
The third section PO3 may extend from the second section PO 2. The third portion PO3 may extend in a third direction DR 3. The other end of the third portion PO3 may be connected to the first nozzle hole NH 1. The third part PO3 may be arranged inside the nozzle NO.
According to an embodiment of the present invention, a first flow path may be defined by the first crucible CB1, the first tube TU1, and the first nozzle hole NH 1. The first deposition material DM1 may be discharged out of the nozzle NO through the first flow passage.
A second tube TU2 may be disposed between the second nozzle hole NH2 and the second crucible CB 2. The second pipe TU2 may have a pipe shape with a hollow formed inside.
For example, the second tube TU2 may include a fourth portion PO4, a fifth portion PO5, and a sixth portion PO 6. One end of the fourth portion PO4 may be connected to a second crucible CB 2. The fourth portion PO4 may extend in a third direction DR 3. The fourth portion PO4 may be disposed inside the housing HO.
The fifth part PO5 may extend from the fourth part PO 4. The fifth part PO5 may be inclined at a prescribed angle with respect to the second direction DR 2. For example, the fifth part PO5 may be inclined to the left side toward the upper part with reference to fig. 4. Thereby, the interval between the first pipe TU1 and the second pipe TU2 in the second direction DR2 may be gradually decreased. The fifth part PO5 may be arranged inside the nozzle NO.
The sixth section PO6 may extend from the fifth section PO 5. The sixth portion PO6 may extend in a third direction DR 3. The other end of the sixth portion PO6 may be connected to the second nozzle hole NH 2. The sixth part PO6 may be arranged inside the nozzle NO.
According to an embodiment of the present invention, a second flow path may be defined by the second crucible CB2, the second tube TU2, and the second nozzle hole NH 2. The second deposition material DM2 may be discharged out of the nozzle NO through the second flow passage.
In addition, as can be seen from the above, the distance between the portion of the first pipe TU1 and the portion of the second pipe TU2 adjacent to the first nozzle hole NH1 and the second nozzle hole NH2, respectively, is smaller than the distance between the portion of the first pipe TU1 and the portion of the second pipe TU2 adjacent to the first crucible CB1 and the second crucible CB2, respectively.
The inner diameters of the first tube TU1 and the second tube TU2 may be constant. For example, the inner diameters of the first, second and third portions PO1, PO2, PO3 may be the same as the diameter of the first nozzle orifice NH 1. The inner diameters of the fourth part PO4, the fifth part PO5 and the sixth part PO6 may be the same as the diameter of the second nozzle hole NH 2. However, the present invention is not limited thereto. For example, the first tube TU1 and the second tube TU2 may also each include a zone having a locally variable inner diameter.
The first pipe TU1 and the second pipe TU2 may be made independently of the housing HO and the nozzle NO and disposed inside the housing HO and the nozzle NO. However, the present invention is not limited thereto. The first pipe TU1 and the second pipe TU2 may also be integrally formed with the housing HO and the nozzle NO.
According to an embodiment of the present invention, the first deposition substance DM1 may be discharged out of the nozzle NO through the first flow passage, and the second deposition substance DM2 may be discharged out of the nozzle NO through the second flow passage.
If the first and second deposition substances DM1 and DM2 are mixed inside the deposition source SO, there is a possibility that a phenomenon in which one of the deposition substances flows backward may occur due to a difference in vaporization temperature between the first and second deposition substances DM1 and DM 2. However, according to the present embodiment, the first deposition material DM1 and the second deposition material DM2 are not mixed in the deposition source SO and are discharged along the flow paths independent of each other, SO that the phenomenon of the deposition material flowing backward can be prevented.
According to an embodiment of the present invention, since the first nozzle hole NH1 discharging the first deposition substance DM1 and the second nozzle hole NH2 discharging the second deposition substance DM2 are adjacently disposed, the first deposition substance DM1 and the second deposition substance DM2 discharged from the nozzle holes NH1, NH2 can be uniformly mixed and supplied to the subject substrate SUB.
According to an embodiment of the present invention, the deposition source SO may include heaters HE1, HE2, thermal insulating walls IN, and reflectors RF. The heaters HE1, HE2, the insulating wall IN, and the reflector RF may be provided inside the casing HO.
Heaters HE1, HE2 may be disposed between the inner wall of housing HO and crucible CB. Specifically, the heaters HE1, HE2 may include a first heater HE1 and a second heater HE 2.
The first heater HE1 may be disposed between an inner wall of the housing HO and the first crucible CB 1. The first heater HE1 may apply heat to the first crucible CB 1. The first deposition substance DM1 contained inside the first crucible CB1 may be vaporized or sublimated by heat applied to the first heater HE 1.
The second heater HE2 may be disposed between the inner wall of the housing HO and the second crucible CB 2. The second heater HE2 may apply heat to the second crucible CB 2. The second deposition substance DM2 contained inside the second crucible CB2 may be vaporized or sublimated by heat applied to the second heater HE 2.
The first heater HE1 and the second heater HE2 may operate independently of each other. For example, the amount of heat energy applied to the first crucible CB1 by the first heater HE1 may be different from the amount of heat energy applied to the second crucible CB2 by the second heater HE 2. Thereby, the temperature inside the first crucible CB1 and the temperature inside the second crucible CB2 can be different.
In fig. 4, the first heater HE1 and the second heater HE2 are shown as being provided on the side surfaces of the first crucible CB1 and the second crucible CB2, but the present invention is not limited thereto. For example, the first heater HE1 and the second heater HE2 may be disposed below the first crucible CB1 and the second crucible CB 2.
According to an embodiment of the present invention, the thermal insulation wall IN may cover the first crucible CB1 and the second crucible CB2, respectively. The heat insulating wall IN can prevent heat inside the casing HO from flowing out of the casing HO. Thereby, the influence of heat generated in the deposition source SO on the subject substrate SUB can be minimized.
Further, the heat insulating wall IN provided between the first crucible CB1 and the second crucible CB2 can block heat exchange between the first crucible CB1 and the second crucible CB 2. Thereby, the temperatures of the first crucible CB1 and the second crucible CB2 can be easily and independently controlled.
According to an embodiment of the invention, a reflector RF may be arranged between the nozzle NO and the first and second crucibles CB1, CB 2. The reflector RF may comprise an insulating material. The reflector RF can prevent the heat of the first crucible CB1 and the second crucible CB2 from flowing out toward the upper portion of the housing HO. Thereby, the reflector RF can block heat flowing out toward the target substrate SUB (refer to fig. 1) disposed above the deposition source SO.
According to an embodiment of the present invention, the distance TS (refer to fig. 2) between the deposition source SO and the object substrate SUB may be reduced by the thermal insulation wall IN and the reflector RF. This can improve the efficiency of depositing the deposition substance on the target substrate SUB (see fig. 2).
According to an embodiment of the present invention, the deposition source SO may further include an angle limiting portion AC. The angle restricting portion AC may be provided on the cover CV of the housing HO. Specifically, two angle restricting portions AC may be provided on both sides of the cover CV, respectively. The angle restricting portion AC may extend in the first direction DR 1. The angle restricting portions AC may be spaced apart in the second direction DR 2. The nozzle NO may be disposed between the angle restricting portions AC. However, the shape of the angle restricting portion AC is not limited to the above.
The height of the angle restricting portion AC may be greater than the height of the nozzle NO. The angle restricting part AC may restrict the discharge direction of the first deposition substance DM1 and the second deposition substance DM2 discharged from the nozzle NO. This can reduce the amount of the deposition material wasted by being discharged to the outside of the target substrate SUB.
Next, a deposition source having a structural difference from the foregoing embodiment will be explained. In the following description, the same configurations as those of the above-described embodiments will be omitted, and the details will be described mainly for the different configurations.
Fig. 5 is a perspective view schematically illustrating a deposition source of a deposition apparatus according to an embodiment of the present invention. Fig. 6 is a sectional view schematically illustrating a sectional shape along the line II-II' shown in fig. 5. Fig. 7 is a sectional view schematically illustrating a sectional shape along the line III-III' shown in fig. 5.
Referring to fig. 5, the deposition source SO-1 may include a housing HO, a plurality of first nozzles NO1, and a plurality of second nozzles NO 2. The deposition source SO-1 according to the present embodiment may be moved in the second direction DR2 (refer to fig. 2) as in the previous embodiments.
According to an embodiment of the invention, the first nozzle NO1 and the second nozzle NO2 may be provided on the housing HO. The first nozzle NO1 and the second nozzle NO2 may be alternately arranged in the first direction DR 1. The first and second nozzles NO1 and NO2 are illustrated as five in fig. 5, respectively, but this is only a schematic illustration, and the number of the first and second nozzles NO1 and NO2 is not limited thereto.
The distance between the nth first nozzle NO1 and the nth second nozzle NO2 may be smaller than the distance between the nth second nozzle NO2 and the N +1 th first nozzle NO1, based on the first direction DR 1. For example, the nth first nozzle NO1 and the nth second nozzle NO2 may contact each other, and the N +1 th first nozzle NO1 may be spaced apart from the nth second nozzle NO2 in the first direction DR 1. Wherein N is a natural number.
According to an embodiment of the present invention, the first nozzle NO1 and the second nozzle NO2 may overlap each other when viewed from the first direction DR 1. More specifically, the nozzle hole NO1-H of the first nozzle NO1 and the nozzle hole NO2-H of the second nozzle NO2 may overlap each other when viewed from the first direction DR 1. That is, the centers of the nozzle holes NO1-H of the first nozzle NO1 and the centers of the nozzle holes NO2-H of the second nozzle NO2 may be disposed on the same line with reference to the second direction DR2 as a moving direction of the deposition source SO-1.
Referring to fig. 6, a first nozzle NO1 may be connected to the first crucible CB 1. A first pipe TU1-1 may be disposed between the first nozzle NO1 and the first crucible CB 1. One end of the first tube TU1-1 may be connected to the first crucible CB 1. The other end of the first pipe TU1-1 may be connected to the nozzle hole NO1-H of the first nozzle NO 1.
Referring to fig. 7, a second nozzle NO2 may be connected to the second crucible CB 2. A second pipe TU2-1 may be disposed between the second nozzle NO2 and the second crucible CB 2. One end of the second tube TU2-1 may be connected to the second crucible CB 2. The other end of the second pipe TU2-1 may be connected to the nozzle hole NO2-H of the second nozzle NO 2.
According to an embodiment of the present invention, the first deposition substance DM1 contained in the first crucible CB1 can be discharged to the outside of the deposition source SO-1 through the first pipe TU1-1 and the first nozzle NO 1. The second deposition material DM2 contained in the second crucible CB2 can be discharged to the outside of the deposition source SO-1 through the second pipe TU2-1 and the second nozzle NO 2.
According to an embodiment of the present invention, the first deposition material DM1 and the second deposition material DM2 are discharged to the outside of the deposition source SO-1 through separate paths, respectively, and thus can not be mixed inside the deposition source SO-1.
Further, according to an embodiment of the present invention, the first nozzle NO1 and the second nozzle NO2 discharging deposition substances DM1, DM2 different from each other may be arranged side by side in a direction (i.e., the first direction DR1) perpendicular to the moving direction (i.e., the second direction DR2) of the deposition source SO-1. Thus, the range in which the first deposition substance DM1 is discharged to the subject substrate SUB and the range in which the second deposition substance DM2 is discharged to the subject substrate SUB may completely overlap with respect to the moving direction (the second direction DR2) of the deposition source SO-1. As a result, the first deposition material DM1 and the second deposition material DM2 can be deposited on the target substrate SUB in a uniform mixture.
Fig. 8 is a sectional view schematically illustrating a deposition source of a deposition apparatus according to an embodiment of the present invention. The shape of the deposition source SO-2 shown in FIG. 8 may be similar to that of the deposition source SO shown in FIG. 3.
Referring to fig. 8, the deposition source SO-2 may further include a gas storage part and a control valve. In one embodiment, the gas reservoir may be disposed between the nozzle NO and the crucible. The gas storage may include a first gas storage GS1 and a second gas storage GS 2. The first gas storage part GS1 may be disposed between the first pipe TU1 and the first crucible CB 1. In the present embodiment, one end of the first pipe TU1 may be connected to the first gas storage part GS 1.
A first sub-tube STU1 may be disposed between the first gas storage portion GS1 and the first crucible CB 1. The first gas storage GS1 may communicate with the first crucible CB1 through the first sub-tube STU 1.
The second gas storage part GS2 may be disposed between the second pipe TU2 and the second crucible CB 2. One end of the second pipe TU2 may be connected to the second gas storage part GS 2. A second sub-pipe STU2 may be disposed between the second gas storage GS2 and the second crucible CB 2. The second gas storage GS2 may communicate with the second crucible CB2 through the second sub-pipe STU 2.
According to an embodiment of the present invention, the control valve may include a first control valve VA1 and a second control valve VA 2. A first control valve VA1 may be disposed between the first gas storage GS1 and the first crucible CB 1. For example, a first control valve VA1 may be provided on the first sub-pipe STU 1.
The first control valve VA1 may open and close a path inside the first sub-pipe STU 1. More specifically, the first control valve VA1 may fully open, partially open, or fully close a path inside the first sub-pipe STU 1.
A second control valve VA2 may be disposed between the second gas storage GS2 and the second crucible CB 2. For example, a second control valve VA2 may be provided on the second sub-pipe STU 2. The second control valve VA2 may partially or fully open and close a path inside the second sub-pipe STU 2.
According to an embodiment of the present invention, the deposition source SO-2 further includes a gas storage unit and a control valve, SO that the discharge amounts of the first deposition material DM1 and the second deposition material DM2 can be easily controlled.
According to an embodiment of the present invention, in the case where the subject substrate SUB does not exist inside the deposition apparatus DD, the problem of the waste of the deposition substance can be improved by blocking the SUB-tubes STU1, STU2, to which the deposition substances DM1, DM2 are moved, by controlling the valves VA1, VA 2.
Fig. 9 is a perspective view schematically illustrating a deposition source of a deposition apparatus according to an embodiment of the present invention. The deposition source SO-3 shown in FIG. 9 may be moved in a second direction DR 2.
Referring to FIG. 9, the deposition source SO-3 may include a housing HO-3, a plurality of first nozzles NO1, a plurality of second nozzles NO2, a first crucible CB1-3, and a second crucible CB 2-3. The shape and arrangement of the first nozzle NO1 and the second nozzle NO2 shown in fig. 9 may be the same as those of the first nozzle NO1 and the second nozzle NO2 shown in fig. 5.
According to the present embodiment, the first crucible CB1-3 and the second crucible CB2-3 can be disposed outside the housing HO-3. For example, a first crucible CB1-3 and a second crucible CB2-3 can be provided on one side of the housing HO-3. The first crucible CB1-3 and the second crucible CB2-3 may be aligned in the first direction DR 1.
The first nozzle NO1 may be connected to the first crucible CB 1-3. Inside the housing HO-3 may be provided a plurality of first tubes TU1-3 connecting the respective first nozzles NO1 and the first crucible CB 1-3. The second nozzle NO2 may be connected to a second crucible CB 2-3. A plurality of second pipes TU2-3 connecting the respective second nozzles NO2 and the second crucible CB2-3 may be provided inside the housing HO-3.
According to an embodiment of the present invention, since the first and second crucibles CB1-3 and CB2-3 containing the deposition substance are provided outside the housing HO-3, the shapes, volumes, arrangement structures, and the like of the first and second crucibles CB1-3 and CB2-3 can be freely designed.
Fig. 10 is a sectional view schematically illustrating a nozzle structure of a deposition source of a deposition apparatus according to an embodiment of the present invention. The deposition source SO' shown in fig. 10 may have the same structure as the deposition source SO shown in fig. 4 except for the nozzle portion.
Referring to fig. 10, a single nozzle hole NH may be defined in the nozzle NO 'of the deposition source SO'. The individual nozzle hole NH may have a circular shape when viewed in plan. However, the present invention is not limited thereto.
The first crucible CB1 and the second crucible CB2 can be connected to a single nozzle hole NH through the first tube TU1 and the second tube TU 2. The first deposition substance DM1 and the second deposition substance DM2 may be independently moved in the housing HO through the first pipe TU1 and the second pipe TU2, respectively, and mixed in the single nozzle hole NH and discharged out of the nozzle NO'.
According to the present embodiment, since the first deposition substance DM1 and the second deposition substance DM2 are mixed and discharged in the nozzle hole NH that is the tip of the nozzle NO ', the deposition source SO' can discharge the uniformly mixed deposition substances.
While the present invention has been described with reference to the embodiments, it will be understood by those skilled in the art that the present invention may be modified and changed in various ways without departing from the spirit and scope of the present invention as set forth in the appended claims.
The embodiments disclosed in the present invention are not intended to limit the technical ideas of the present invention, and all technical ideas existing within the scope of the appended claims and equivalents thereto should be construed as being included in the scope of the claims of the present invention.
Description of the reference numerals
DD: deposition apparatus CH: chamber
GA: a gate MP: movable board
MK: mask assembly SO: deposition source
HO: the shell NO: nozzle with a nozzle body
NH 1: first nozzle hole NH 2: second nozzle hole
CB 1: first crucible CB 2: second crucible
TU 1: first pipe TU 2: second pipe

Claims (10)

1. A deposition apparatus, comprising:
a housing;
a nozzle provided on the housing and defining a first nozzle hole and a second nozzle hole adjacent to the first nozzle hole;
a crucible provided inside the housing and including a first crucible containing a first deposition material and a second crucible containing a second deposition material; and
and a connecting portion including a first tube provided between the first nozzle hole and the first crucible and a second tube provided between the second nozzle hole and the second crucible.
2. The deposition apparatus of claim 1,
the housing extends in a first direction and,
the nozzles are provided in plurality and arranged in the first direction.
3. The deposition apparatus of claim 2,
the first nozzle hole overlaps with the second nozzle hole when viewed from a second direction intersecting the first direction.
4. The deposition apparatus of claim 3,
the housing moves in the second direction.
5. The deposition apparatus of claim 1,
the first deposition substance is discharged from the nozzle through a first flow passage defined by the first crucible, the first tube, and the first nozzle hole, and the second deposition substance is discharged from the nozzle through a second flow passage defined by the second crucible, the second tube, and the second nozzle hole, the first deposition substance and the second deposition substance being not mixed with each other inside the housing and the nozzle.
6. The deposition apparatus according to claim 1,
a gas storage part disposed between the nozzle and the crucible may be further included.
7. The deposition apparatus of claim 6,
the gas storage portion includes:
a first gas storage portion disposed between the first tube and the first crucible; and
a second gas storage portion disposed between the second tube and the second crucible.
8. The deposition apparatus of claim 7, further comprising:
a first control valve disposed between the first gas storage and the first crucible; and
a second control valve disposed between the second gas storage and the second crucible.
9. The deposition apparatus of claim 1,
a distance between a portion of the first tube and a portion of the second tube adjacent to the first nozzle hole and the second nozzle hole, respectively, is smaller than a distance between a portion of the first tube and a portion of the second tube adjacent to the first crucible and the second crucible, respectively.
10. The deposition apparatus of claim 9,
the first tube includes an inclined portion inclined toward the second tube,
the second tube includes an inclined portion inclined toward the first tube.
CN202110612779.2A 2020-06-05 2021-06-02 Deposition apparatus Pending CN113755811A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2020-0068475 2020-06-05
KR1020200068475A KR20210152089A (en) 2020-06-05 2020-06-05 Deposition device

Publications (1)

Publication Number Publication Date
CN113755811A true CN113755811A (en) 2021-12-07

Family

ID=78787345

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110612779.2A Pending CN113755811A (en) 2020-06-05 2021-06-02 Deposition apparatus

Country Status (2)

Country Link
KR (1) KR20210152089A (en)
CN (1) CN113755811A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4389928A1 (en) * 2022-12-20 2024-06-26 Samsung Display Co., Ltd. Deposition apparatus

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102046832A (en) * 2008-05-30 2011-05-04 应用材料股份有限公司 Arrangement for coating a substrate
CN102134707A (en) * 2009-11-30 2011-07-27 三星移动显示器株式会社 Deposition source, deposition apparatus having the same, and method of forming thin film
KR20120035787A (en) * 2010-10-06 2012-04-16 엘아이지에이디피 주식회사 Apparatus for supplying organic matter, apparatus and method for depositing organic matter using the same
CN108060392A (en) * 2017-12-14 2018-05-22 深圳先进技术研究院 A kind of controllable linear vaporising device and film plating process
KR20180066740A (en) * 2016-12-09 2018-06-19 주식회사 선익시스템 Deposition Chamber including Spreading Guider
KR20180066741A (en) * 2016-12-09 2018-06-19 주식회사 선익시스템 Deposition Chamber

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102046832A (en) * 2008-05-30 2011-05-04 应用材料股份有限公司 Arrangement for coating a substrate
CN102134707A (en) * 2009-11-30 2011-07-27 三星移动显示器株式会社 Deposition source, deposition apparatus having the same, and method of forming thin film
KR20120035787A (en) * 2010-10-06 2012-04-16 엘아이지에이디피 주식회사 Apparatus for supplying organic matter, apparatus and method for depositing organic matter using the same
KR20180066740A (en) * 2016-12-09 2018-06-19 주식회사 선익시스템 Deposition Chamber including Spreading Guider
KR20180066741A (en) * 2016-12-09 2018-06-19 주식회사 선익시스템 Deposition Chamber
CN108060392A (en) * 2017-12-14 2018-05-22 深圳先进技术研究院 A kind of controllable linear vaporising device and film plating process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4389928A1 (en) * 2022-12-20 2024-06-26 Samsung Display Co., Ltd. Deposition apparatus

Also Published As

Publication number Publication date
KR20210152089A (en) 2021-12-15

Similar Documents

Publication Publication Date Title
JP6513201B2 (en) Material deposition apparatus, vacuum deposition system, and material deposition method
KR101232910B1 (en) apparatus for supplying organic matter, Apparatus and method for depositing organic matter using the same
EP1413644A2 (en) Thin-film deposition device
KR20220123336A (en) Nozzle for a distribution assembly of a material deposition source arrangement, material deposition source arrangement, vacuum deposition system and method for depositing material
TWI395828B (en) A molecule supply source for use in thin-film forming
CN113755811A (en) Deposition apparatus
KR102260572B1 (en) Thin Film Deposition Apparatus with Multiple Evaporation Source
CN107002221B (en) Material deposition arrangement and material distribution arrangement for vacuum deposition
JP2003513169A (en) Method and apparatus for coating a substrate in a vacuum
KR20100034168A (en) Material providing unit and apparatus for depositioning thin film having the same and material providing method
CN103924195A (en) Vacuum Evaporating Device
TW201829814A (en) Material deposition arrangement, vacuum deposition system and method therefor
JP2017534768A (en) Material source arrangement and material distribution arrangement for vacuum deposition
WO2013122058A1 (en) Deposition head and deposition apparatus
KR20090073353A (en) Gas injection apparatus and apparatus for depositing film having the same
KR102018865B1 (en) Material source arrangement and nozzle for vacuum deposition
KR102080764B1 (en) Linear source, and substrate processing apparatus
KR20060013208A (en) Evaporation device
JP5618713B2 (en) Thin film forming apparatus and thin film forming method
KR20130043250A (en) Constant volume closure valve for vapor phase deposition source
JP6057048B2 (en) Thermal storage gas processing equipment
KR20240047478A (en) carburetor
KR101719739B1 (en) Evaporating apparatus
KR20140078284A (en) Deposition source and Deposition appatatus using the same
CN209508394U (en) Evaporation source device, film forming device, and electronic device manufacturing device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination