CN113755808A

CN113755808A - Magnetron sputtering apparatus and control method thereof

Info

Publication number: CN113755808A
Application number: CN202111141400.0A
Authority: CN
Inventors: 张�浩; 王国峰
Original assignee: Beihai Huike Semiconductor Technology Co Ltd
Current assignee: Beihai Huike Semiconductor Technology Co Ltd
Priority date: 2021-09-28
Filing date: 2021-09-28
Publication date: 2021-12-07

Abstract

The application discloses a magnetron sputtering device and a control method thereof, wherein the magnetron sputtering device comprises a base station, a target material, a sputtering cavity and a magnetic field regulator; the sputtering cavity is used for sealing the base station, the target and the magnetic field regulator, and the magnetic field regulator comprises a first cavity, at least two magnets and a magnet spacing control module; the at least two magnets are arranged in the first cavity, and the magnetic poles of the tops of the two magnets are opposite; the magnet spacing control module is connected with the two magnets and controls one or two of the two magnets to move so as to change the spacing between the two magnets; the magnetic field regulator further comprises a lifting structure, and the lifting structure is arranged below the moving magnet to control the magnet to move in the direction perpendicular to the target, so that the problems of small sputtering amount in the middle area or the edge area of the target and low overall utilization rate of the target are solved.

Description

Magnetron sputtering apparatus and control method thereof

Technical Field

The application relates to the technical field of sputtering, in particular to a magnetron sputtering device for improving the utilization rate of a target material and a control method thereof.

Background

The magnetron sputtering device is widely applied to the processing of integrated circuits, and magnetron sputtering coating is a method for applying orthogonal electromagnetic fields above a target material on the basis of dipolar direct current sputtering, binding electrons to make spiral motion around the target surface through a magnetic field, increasing the probability of collision of the electrons and argon gas and improving the gas ionization rate and the sputtering yield.

Because of its excellent controllability and film bonding force, it is widely used in semiconductor manufacturing processes. Among many properties of the film, uniformity is an important index for measuring the quality of the film and the performance of a machine, and the uniformity of the film is related to many factors, including gas uniformity, magnetic field uniformity, target substrate spacing and the like; in the prior sputtering, magnetic lines of force are fixed and point to the middle magnetic pole from the magnetic poles at two sides, and the middle of the target material is provided with more invalid sputtering areas. The position with larger magnetic field intensity is used up by sputtering, and the target must be replaced by a new target, and at the moment, a large amount of residual in the middle area of the target is wasted, so that the utilization rate of the target is low.

Disclosure of Invention

The application aims to provide a magnetron sputtering device and a control method thereof, which can solve the problems of less sputtering amount in the middle area of a target material and low overall utilization rate of the target material.

The application discloses a magnetron sputtering device, which comprises a base station, a target material, a sputtering cavity and a magnetic field regulator; the base station is used for placing a substrate; the target is arranged opposite to the base station; the magnetic field regulator is arranged on one surface of the target far away from the base station; the sputtering cavity is used for sealing the base station, the target and the magnetic field regulator, and the magnetic field regulator comprises a first cavity, at least two magnets and a magnet spacing control module; the at least two magnets are arranged in the first cavity, and the magnetic poles of the tops of the two magnets are opposite; the magnet spacing control module is connected with the two magnets and controls one or two of the two magnets to move so as to change the spacing between the two magnets; the magnetic field regulator further comprises a lifting structure, and the lifting structure is arranged below the moving magnet to control the magnet to move in the direction vertical to the target.

Optionally, the two magnets are respectively a first magnet and a second magnet, the magnet spacing control module includes a first fixing structure and a first spacing control structure, the first fixing structure is used for fixing the first magnet, and the first spacing control structure includes a first screw, a first nut and a first servo motor; the first fixing structure is provided with two sliding grooves, and two ends of the first screw rod are arranged in the two sliding grooves; the first nut is arranged on the first screw rod and is connected with the second magnet; the first servo motor drives the first nut to drive the second magnet to reciprocate towards the first magnet; the lifting structure is arranged below the first servo motor, and controls the first distance control structure and the second magnet to do lifting motion while the first distance control structure controls the second magnet to do reciprocating motion.

Optionally, the two magnets are a first magnet and a second magnet respectively, and the magnet spacing control module includes a first fixing structure, a first plate, a first spacing control structure, and a second spacing control structure; the lifting structure comprises a first lifting structure and a second lifting structure; the first distance control structure comprises a first screw, a first nut and a first servo motor; the second distance control structure comprises a second screw, a second nut and a second servo motor; the first fixing structure is provided with two sliding grooves, the first plate is provided with two symmetrical sliding grooves, one end of the first screw rod is arranged in one sliding groove of the first fixing structure, and the other end of the first screw rod is arranged in one sliding groove of the first plate; one end of the second screw rod is arranged in a sliding groove of the first fixing structure, and the other end of the second screw rod is arranged in a sliding groove of the first plate; the first nut is arranged on the first screw rod and is connected with the second magnet; the second nut is arranged on the second screw rod and is connected with the first magnet; the first servo motor drives the first nut to drive the second magnet to reciprocate towards the first magnet; the first lifting structure is arranged below the first servo motor, and controls the first distance control structure and the second magnet to do lifting motion while the first distance control structure controls the second magnet to do reciprocating motion; the second servo motor drives the second nut to drive the first magnet to reciprocate towards the second magnet; the second lifting structure is arranged below the second servo motor, and controls the second distance control structure and the first magnet to do lifting motion while the first distance control structure controls the second magnet to do reciprocating motion.

Optionally, the magnetic field regulator includes a third magnet disposed on the first fixed structure, the second magnet is located between the first magnet and the third magnet, a magnetic pole of a top of the second magnet is opposite to a magnetic pole of a top of the first magnet, the magnetic pole of the top of the first magnet is the same as the magnetic pole of the top of the third magnet, and magnetic field strengths of the first magnet and the third magnet are the same.

Optionally, the magnetic field regulator includes a third magnet fixedly disposed on the first plate, the third magnet being located between the first magnet and the second magnet, a top of the first magnet having a magnetic pole opposite to a magnetic pole of a top of the third magnet, the top of the first magnet having a magnetic pole identical to a magnetic pole of a top of the second magnet.

Optionally, the magnetic field strength of the first magnet, the second magnet and the third magnet is the same.

Optionally, the magnetron sputtering apparatus further includes a fourth magnet and a fifth magnet, the fifth magnet and the fourth magnet are fixedly disposed on the first fixing structure, the second magnet is disposed between the third magnet and the fifth magnet, and the first magnet is disposed between the fourth magnet and the third magnet; wherein the magnetic pole of the top of the third magnet is the same as the magnetic pole of the top of the fourth magnet, the magnetic pole of the top of the third magnet is the same as the magnetic pole of the top of the fifth magnet, the magnetic pole of the top of the first magnet is the same as the magnetic pole of the top of the second magnet, and the magnetic pole of the top of the first magnet is opposite to the magnetic pole of the top of the third magnet.

The application also discloses a control method for the magnetron sputtering device, which comprises the following steps:

starting the first servo motor to drive the second magnet to reciprocate on the first screw rod;

starting a first lifting structure and adjusting the height of the second magnet; and

and cutting off the power supply of the magnetron sputtering device, ending sputtering, and closing the first servo motor and the second servo motor.

Optionally, the control method further includes the steps of:

starting a second servo motor to drive the first magnet to reciprocate on the second screw rod; and

and starting a second lifting structure to adjust the height of the first magnet.

Optionally, the control method further includes the steps of:

and starting the rotating structure to drive the first magnet, the second magnet, the first servo motor and the second servo motor to rotate.

Compared with the scheme of a fixed magnet, the scheme has the advantages that the at least two magnets are placed in the first cavity, a large number of magnetic lines perpendicular to the target are formed on the two magnets, the magnetic field formed between the magnets can be changed, and the problems that the sputtering amount of the target designated area is small and the overall utilization rate of the target is low are solved due to the fact that the strength of the magnetic field is different when the target is sputtered.

Drawings

The accompanying drawings, which are included to provide a further understanding of the embodiments of the application, are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is obvious that the drawings in the following description are only some embodiments of the application, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. In the drawings:

fig. 1 is a schematic structural view of a magnetron sputtering apparatus in a first embodiment of the present application;

FIG. 2 is a schematic diagram of a magnetic field regulator in a second embodiment of the present application;

fig. 3 is a schematic view (a) of the movement of a second magnet in a second embodiment of the present application;

fig. 4 is a schematic view (b) of the movement of the second magnet in the second embodiment of the present application;

fig. 5 is a schematic view (c) of the movement of the second magnet in the second embodiment of the present application;

fig. 6 is a schematic view (d) of the movement of the second magnet in the second embodiment of the present application;

FIG. 7 is a schematic diagram of a magnetic field regulator in a third embodiment of the present application;

FIG. 8 is a schematic diagram of a magnetic field regulator in a fourth embodiment of the present application;

FIG. 9 is a schematic diagram of a magnetic field regulator in a fifth embodiment of the present application;

fig. 10 is a flowchart illustrating a method of controlling a magnetron sputtering apparatus according to a sixth embodiment of the present application.

Wherein, 20, a target material; 30. a base station; 40. a sputtering chamber; 50. a substrate; 100. a magnetic field regulator; (ii) a 110. A first cavity; 111. a first cavity wall; 120. a magnet; 121. a first magnet; 122. a second magnet; 123. a third magnet; 124. a fourth magnet; 135. a fifth magnet; 130. a magnet spacing control module; 131. a first fixed structure; 132. a first pitch control structure; 133. a second pitch control structure; 134. a second fixed structure; 135. a chute; 136. a first plate; 140. a screw; 141. a first screw; 142. a second screw; 150. a nut; 151. a first nut; 152. a second nut; 160. a rotating structure; 170. a servo motor; 171. a first servo motor; 172. a second servo motor; 180. a linkage shaft; 190. a lifting structure; 191. a first lifting structure; 192. and a second lifting structure.

Detailed Description

It is to be understood that the terminology, the specific structural and functional details disclosed herein are for the purpose of describing particular embodiments only, and are representative, but that the present application may be embodied in many alternate forms and should not be construed as limited to only the embodiments set forth herein.

In the description of the present application, the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating relative importance or as implicitly indicating the number of technical features indicated. Thus, unless otherwise specified, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature; "plurality" means two or more. The terms "comprises" and "comprising," and any variations thereof, are intended to cover a non-exclusive inclusion, such that one or more other features, integers, steps, operations, elements, components, and/or combinations thereof may be present or added.

Further, terms of orientation or positional relationship indicated by "center", "lateral", "upper", "lower", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, are described based on the orientation or relative positional relationship shown in the drawings, are simply for convenience of description of the present application, and do not indicate that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present application.

Furthermore, unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly and may include, for example, fixed connections, removable connections, and integral connections; can be mechanically or electrically connected; either directly or indirectly through intervening media, or through both elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.

The present application is described in detail below with reference to the figures and alternative embodiments.

Fig. 1 is a schematic structural view of a magnetron sputtering apparatus in a first embodiment of the present application; as shown in fig. 1, as a first embodiment of the present application, a magnetron sputtering apparatus 10 is disclosed, which includes a base 30, a target 20, a sputtering chamber 40, and a magnetic field regulator 100; the base table 30 is used for placing a substrate 50; the target 20 is arranged opposite to the base 30; the magnetic field regulator 100 is arranged on a surface of the target 20 away from the base table 30; the sputtering chamber 40 is used for sealing the base table 30, the target 20 and the magnetic field regulator 100, the magnetic field regulator 100 includes a first chamber 110, at least two magnets 120 and a magnet spacing control module 130, the first chamber 110 includes a first chamber wall 111, the target 20 is placed on an outer wall of the first chamber wall 111, the two magnets 120 are disposed in the first chamber 110, a large number of magnetic lines perpendicular to the target 20 are formed on the two magnets 120, and the magnet spacing control module 130 controls the variation of the spacing between the two magnets 120; the magnet interval control module 130 drives one of the two magnets 120 or the two magnets 120 to move so as to change the interval between the two magnets 120, and a magnetic field with a constantly changing magnetic field is formed between the two magnets.

Generally, the two magnets 120 are arranged in the same horizontal direction, and have the same height and the same magnetic strength, the two magnets 120 may have the same size, the two magnets 120 made of the same material and having the same shape and size are continuously spaced by the magnet spacing control module 130, so that the magnetic field between the two magnets 120 is continuously changed, the magnetic field strength at different positions of the target 20 is changed, the situation that the sputtering amount is small in the middle area of the target 20 and the sputtering amount is large in other areas is avoided, the problem that the sputtering of the target 20 is not uniform due to the fact that the magnetic field is not changed is solved, and the magnetic strength of the two magnets may also be different.

In addition to considering the change of the magnetic field in the horizontal direction, the present application is further provided with a lifting structure 190, the lifting structure 190 is arranged under the magnet 120 which moves horizontally to control the magnet 120 which moves horizontally to move up and down, and the height of the moving magnet 120 is also changed while the horizontal distance between the two magnets 120 is changed; specifically, the two magnets 120 are a first magnet 121 and a second magnet 122, respectively, the magnet spacing control module 130 includes a first fixing structure 131 and a first spacing control structure 132, the first fixing structure 131 is used for fixing the first magnet 121, and the first spacing control structure 132 includes a first screw 141, a first nut 151 and a first servo motor 170;

the first fixing structure is provided with two sliding grooves 135, the two sliding grooves 135 are symmetrically arranged around the axis of the rotating structure, the length of the sliding grooves in the vertical direction is greater than that of the sliding grooves in the horizontal direction, and two ends of the first screw 141 are arranged in the two sliding grooves 135; the first nut 151 is disposed on the first screw rod 141 and connected to the second magnet 122; the first servo motor 170 drives the first nut 141 to drive the second magnet 122 to reciprocate toward the first magnet 121; the lifting structure 190 is disposed under the first servo motor 170, a sliding groove 135 is also disposed at a position of the first fixing structure 131 corresponding to the lifting structure 190, one end of the lifting structure 190 is fixed to the first servo motor 170, the other end of the lifting structure 190 is disposed in the sliding groove 135 corresponding to the first fixing structure 131, and the first distance control structure 132 controls the second magnet 122 to reciprocate and controls the first distance control structure 132 and the second magnet 122 to ascend and descend.

The first magnet 121 and the second magnet 122 form a magnetic field perpendicular to the target 20, in the sputtering process, the second magnet 122 reciprocates towards the first magnet 121, along with the change of the distance, the magnetic field between the two magnets 120 changes, so that the magnetic field corresponds to the same area of the target 20, and the strength of the magnetic field is different when the target 20 is sputtered, so that the problems that the sputtering amount of the middle area of the target 20 is small and the overall utilization rate of the target 20 is low are solved, and the magnetic field in the vertical direction changes while the magnetic field in the horizontal direction changes, so that the uniformity of the target 20 is changed more pertinently.

First cavity 110 includes first cavity inner wall, first cavity inner wall is on a parallel with the screw rod, the top distance of second magnet first cavity inner wall's distance less than or equal to 2cm avoids the magnet to rub with the inner wall of first cavity, influences the life of magnet.

Further, the magnetic field regulator 100 further includes a rotating structure 160, and the rotating structure 160 is disposed under the first fixing structure 131, and drives the first fixing structure 131 to rotate, so that all the magnets 120 rotate while the distance between the magnets is changed, and thus the overall uniformity of the corresponding cylindrical target 20 can be further improved.

Fig. 2 is a schematic structural diagram of a magnetic field regulator in a second embodiment of the present application, and as shown in fig. 2, as a second embodiment of the present application, unlike the above-mentioned embodiments, the magnetic field regulator further includes a third magnet 123, the third magnet 123 is disposed on the first fixed structure 131, the second magnet 122 is located between the first magnet 121 and the third magnet 123, a magnetic pole of a top portion of the second magnet is opposite to a magnetic pole of a top portion of the first magnet and the third magnet, magnetic field strengths of the first magnet 121 and the third magnet 123 are the same, and a magnetic field strength of the second magnet 122 may be the same as or different from a magnetic field strength of the first magnet 123.

The middle second magnet 122 is connected to the first nut 141, the first nut 141 is connected with the first servo motor 171 and the first screw 151, the screw end tail of the first screw 151 extends into the sliding chutes 135 on the two sides of the first fixing structure 131, the first servo motor 171 is connected with the lifting structure 190, the bottom end of the lifting structure 190 extends into the middle sliding chute 135 of the first fixing structure 131, the second magnet 122 can move linearly relative to the first screw 151, and meanwhile the second magnet 122 is controlled by the lifting structure 190 to move up and down. The magnets on both sides are connected to a rotating structure, and the rotating structure 190 drives the whole magnet assembly (including the middle magnet and the magnets on both sides) to rotate at a constant speed. Meanwhile, the first servo motor 171 controls the first nut 141 to drive the middle magnet to do horizontal linear motion, and the lifting structure 190 drives the middle magnet to do vertical lifting motion, so that three-dimensional motion of the middle magnet is realized.

The number of the small magnets in the magnet group can be multiple, so that the cross distribution of magnetic poles is met, the number of the small magnets is preferably odd, and when the number of the small magnets is even, magnetic field lines are asymmetric; three magnets are taken as an exemplary explanation, the middle magnet is controlled by the first servo motor to do periodic reciprocating motion on the first screw rod 151 relative to the magnets on the two sides, the middle magnet is controlled by the lifting structure 190 to do lifting motion in the vertical direction, the rotating motion of the whole magnet group is superposed, the middle magnet does three-dimensional motion in a limited space, the frequency of each-dimensional motion can be accurately controlled, the optimal motion track of the middle magnet can be determined according to a test result, and the middle magnet is controlled to move with the optimal motion track in a reaction. Finally, the magnetic field lines change periodically along with the position change of the middle magnet, the changed magnetic field lines bound electrons to be distributed more uniformly in the whole area, and high-energy particles generated by ionization uniformly bombard the whole surface of the target. With the proposed apparatus, the annular groove generated by sputtering is almost eliminated after the target is sputtered for use.

Fig. 3 is a schematic view (a) of the movement of a second magnet in a second embodiment of the present application; fig. 4 is a schematic view (b) of the movement of the second magnet in the second embodiment of the present application; fig. 5 is a schematic view (c) of the movement of the second magnet in the second embodiment of the present application; fig. 6 is a schematic view (d) of the movement of the second magnet in the second embodiment of the present application; compared with the scheme that the middle magnet only moves horizontally, the scheme has richer changes of magnetic induction lines and can make the target more uniform; as shown in fig. 3 to 6, the distribution of the magnetic field lines when the intermediate magnet 1 moves to different positions is changed, fig. 3 shows the distribution of the magnetic field lines when the intermediate magnet moves to the bottom of the edge, fig. 4 shows the distribution of the magnetic field lines when the intermediate magnet moves to the bottom of the center, fig. 5 shows the distribution of the magnetic field lines when the intermediate magnet moves to the top of the edge, and fig. 6 shows the distribution of the magnetic field lines when the intermediate magnet moves to the center; the periodic reciprocating motion and the lifting motion in the vertical direction of the magnets at the two opposite sides of the middle magnet in the horizontal direction are controlled, and the three-dimensional motion of the middle magnet is controllable by the aid of the rotating motion of the whole magnet group. The utilization rate of the target material is increased, the running time of the magnetron sputtering equipment is prolonged, and the product cost is reduced; and the control device can be improved on the basis of the existing equipment, does not influence the integral structure of the sputtering machine, and is easy to realize technically.

FIG. 7 is a schematic diagram of a magnetic field regulator in a third embodiment of the present application; as a third embodiment of the present application, as shown in fig. 7, the two magnets are a first magnet 121 and a second magnet 122, respectively, and the magnet interval control module 130 includes a first fixing structure 131, a first plate 136, a first interval control structure 132, and a second interval control structure 133; the lifting structure 190 comprises a first lifting structure 191 and a second lifting structure 192; the first pitch control structure 132 comprises a first screw 141, a first nut 151 and a first servo motor 171; the second pitch control structure 133 includes a second screw 142, a second nut 152, and a second servo motor 172.

Two sliding grooves 135 are formed in the first fixing structure 131, the two sliding grooves 135 are symmetrical with respect to the middle first plate 136, two symmetrical sliding grooves are formed in the first plate 136, one end of the first screw 141 is arranged in one sliding groove 135 of the first fixing structure 131, and the other end of the first screw is arranged in one sliding groove 135 of the first plate 136; one end of the second screw 142 is disposed in one of the sliding slots 135 of the first fixing structure 131, and the other end is disposed in one of the sliding slots 135 of the first plate 136; the first nut 151 is disposed on the first screw rod 141 and connected to the second magnet 122; the second nut 152 is disposed on the second screw 142 and coupled to the first magnet 121.

The first servo motor 171 drives the first nut 151 to drive the second magnet 122 to reciprocate toward the first magnet 121; the first lifting structure 191 is disposed under the first servo motor 171, and controls the first spacing control structure 132 and the second magnet 122 to lift and lower while the first spacing control structure 133 controls the second magnet 122 to reciprocate; the second servo motor 172 drives the second nut to drive the first magnet to reciprocate towards the second magnet; the second lifting structure is disposed under the second servo motor 172, and controls the second distance control structure 133 and the first magnet 121 to lift while the first distance control structure 132 controls the second magnet 122 to reciprocate.

The two magnets move in the same direction or in different directions, the two magnets can move relatively or in the same direction, and when moving in the same direction, the moving speeds of the two magnets can be the same or different, and the magnetic field positions of the two magnets can be changed or the magnetic field sizes can be changed, the rotating structure 160 is arranged under the first fixing structure, drives the first fixing structure to rotate, and rotates all the magnets while changing the distance between the magnets, so that the overall uniformity of the corresponding cylindrical target 20 can be further improved.

FIG. 8 is a schematic diagram of a magnetic field regulator in a fourth embodiment of the present application; as a fourth embodiment of the present application, as shown in fig. 8, unlike the above-described embodiments, the magnetron sputtering apparatus includes a third magnet 123, and the third magnet 123 is fixedly provided on the first plate 136; by arranging the three magnets 120, the three magnets 120 are at the same horizontal height, the middle magnet is fixed, and the other two magnets 120 reciprocate towards the middle magnet, so that the magnetic field intensity between every two magnets 120 is continuously changed, and the target material 20 is more uniform during sputtering.

The third magnet 122 may be an electromagnet 120, the magnetic polarity of the electromagnet 120 is opposite to the magnetic polarity of the first magnet 121 and the third magnet 123, and the magnitude of the second magnet 122 is controlled by the magnitude of the current, so that the magnetic field formed by the second magnet 122 and the first magnet 121 and the third magnet 123 may be changed at any time according to the magnitude of the current.

Fig. 9 is a schematic structural diagram of a magnetic field regulator in a fifth embodiment of the present application, and in order to make the target more uniform, as shown in fig. 9, a fourth magnet 124 and a fifth magnet 125 may be further added to the magnetic field regulator 100, the fifth magnet 125 and the fourth magnet are fixedly disposed on the first fixed structure 131, the second magnet 122 is between the third magnet 123 and the fifth magnet 125, and the first magnet 121 is disposed between the fourth magnet 124 and the third magnet 123.

Wherein the third magnet 123, the fourth magnet 124 and the fifth magnet 125 have the same magnetism, the fourth magnet 121 and the second magnet 122 have the same magnetism, and the first magnet 121 and the second magnet 122 have the same magnetism; the first magnet 122 reciprocates between the fourth magnet 124 and the third magnet 123, and the second magnet 122 reciprocates between the third magnet 123 and the fifth magnet 125, so that when the fourth magnet 124, the third magnet 123 and the fifth magnet 125 are fixed, the magnetic fields between the magnets 120 are changed by moving the first magnet 121 and the second magnet 122, thereby making the target more uniform during sputtering.

In this embodiment, the first magnet and the second magnet may be fixed, and the third magnet, the fourth magnet, and the fifth magnet may move, so that the plurality of magnets move, and the variation range of the magnetic field is wider, so that the target material is more uniform.

Fig. 10 is a flowchart illustrating a method of controlling a magnetron sputtering apparatus according to a sixth embodiment of the present application. As another embodiment of the present application, as shown in fig. 10, a control method for any one of the above magnetron sputtering apparatuses is disclosed, including the steps of:

s1: starting the first servo motor to drive the second magnet to reciprocate on the first screw rod;

s2: starting a first lifting structure and adjusting the height of the second magnet; and

s3: and cutting off the power supply of the magnetron sputtering device, ending sputtering, and closing the first servo motor and the second servo motor.

Further, the control method further comprises the steps of:

s4: starting a second servo motor to drive the first magnet to reciprocate on the second screw rod; and

s5: and starting a second lifting structure to adjust the height of the first magnet.

While carrying out any of the above steps, the following steps may also be carried out:

Wherein, first servo motor and second servo motor can start simultaneously, and can use the motor of same power, guarantee the simultaneous movement of first magnet and second magnet, and first elevation structure and second elevation structure also can start simultaneously, and the high synchronization of lift to make the magnetic field that the target received more even, certainly also can not go on step, can adjust according to the actual conditions of target.

It should be noted that, the limitations of each step in the present disclosure are not considered to limit the order of the steps without affecting the implementation of the specific embodiments, and the steps written in the foregoing may be executed first, or executed later, or even executed simultaneously, and as long as the present disclosure can be implemented, all the steps should be considered as belonging to the protection scope of the present application.

It should be noted that the inventive concept of the present application can form many embodiments, but the present application has a limited space and cannot be listed one by one, so that, on the premise of no conflict, any combination between the above-described embodiments or technical features can form a new embodiment, and after the embodiments or technical features are combined, the original technical effect will be enhanced

The foregoing is a more detailed description of the present application in connection with specific alternative embodiments, and the specific implementations of the present application are not to be considered limited to these descriptions. For those skilled in the art to which the present application pertains, several simple deductions or substitutions may be made without departing from the concept of the present application, and all should be considered as belonging to the protection scope of the present application.

Claims

1. A magnetron sputtering device comprises a base station, a target material, a sputtering cavity and a magnetic field regulator; the base station is used for placing a substrate; the target is arranged opposite to the base station; the magnetic field regulator is arranged on one surface of the target far away from the base station; the sputtering cavity is used for sealing the base station, the target material and the magnetic field regulator, and is characterized in that the magnetic field regulator comprises:

a first cavity;

at least two magnets arranged in the first cavity, wherein the magnetic poles of the tops of the two magnets are opposite; and

the magnet spacing control module is connected with the two magnets and controls one or two of the two magnets to move so as to change the spacing between the two magnets;

the magnetic field regulator further comprises a lifting structure, and the lifting structure is arranged below the moving magnet to control the magnet to move in the direction vertical to the target.

2. The magnetron sputtering apparatus of claim 1 wherein the two magnets are a first magnet and a second magnet, respectively, the magnet spacing control module comprises a first fixing structure for fixing the first magnet and a first spacing control structure comprising a first screw, a first nut, and a first servo motor;

the first fixing structure is provided with two sliding grooves, and two ends of the first screw rod are arranged in the two sliding grooves; the first nut is arranged on the first screw rod and is connected with the second magnet;

the first servo motor drives the first nut to drive the second magnet to reciprocate towards the first magnet; the lifting structure is arranged below the first servo motor, and controls the first distance control structure and the second magnet to do lifting motion while the first distance control structure controls the second magnet to do reciprocating motion.

3. The magnetron sputtering apparatus of claim 1 wherein the two magnets are a first magnet and a second magnet, respectively, and the magnet spacing control module comprises a first fixed structure, a first plate, a first spacing control structure, and a second spacing control structure; the lifting structure comprises a first lifting structure and a second lifting structure;

the first distance control structure comprises a first screw, a first nut and a first servo motor; the second distance control structure comprises a second screw, a second nut and a second servo motor;

the first fixing structure is provided with two sliding grooves, the first plate is provided with two symmetrical sliding grooves, one end of the first screw rod is arranged in one sliding groove of the first fixing structure, and the other end of the first screw rod is arranged in one sliding groove of the first plate; one end of the second screw rod is arranged in a sliding groove of the first fixing structure, and the other end of the second screw rod is arranged in a sliding groove of the first plate;

the first nut is arranged on the first screw rod and is connected with the second magnet;

the second nut is arranged on the second screw rod and is connected with the first magnet;

the first servo motor drives the first nut to drive the second magnet to reciprocate towards the first magnet; the first lifting structure is arranged below the first servo motor, and controls the first distance control structure and the second magnet to do lifting motion while the first distance control structure controls the second magnet to do reciprocating motion;

the second servo motor drives the second nut to drive the first magnet to reciprocate towards the second magnet; the second lifting structure is arranged below the second servo motor, and controls the second distance control structure and the first magnet to do lifting motion while the first distance control structure controls the second magnet to do reciprocating motion.

4. The magnetron sputtering apparatus of claim 2 wherein the magnetic field regulator includes a third magnet disposed on the first fixed structure, the second magnet being located between the first magnet and the third magnet, the top of the second magnet having a magnetic polarity opposite the magnetic polarity of the top of the first magnet, the magnetic polarity of the top of the first magnet being the same as the magnetic polarity of the top of the third magnet, the magnetic field strength of the first magnet and the magnetic field strength of the third magnet being the same.

5. The magnetron sputtering apparatus of claim 3 wherein the magnetic field regulator comprises a third magnet fixedly disposed on the first plate, the third magnet being positioned between the first magnet and the second magnet, the top of the first magnet having a magnetic polarity opposite the magnetic polarity of the top of the third magnet, the top of the first magnet having the same magnetic polarity as the top of the second magnet.

6. The magnetron sputtering apparatus of claim 4 or 5 wherein the magnetic field strength of the first, second and third magnets is the same.

7. The magnetron sputtering device of claim 5 further comprising fourth and fifth magnets fixedly disposed on the first fixed structure, the second magnet disposed between the third and fifth magnets, the first magnet disposed between the fourth and third magnets;

wherein the magnetic pole of the top of the third magnet is the same as the magnetic pole of the top of the fourth magnet, the magnetic pole of the top of the third magnet is the same as the magnetic pole of the top of the fifth magnet, the magnetic pole of the top of the first magnet is the same as the magnetic pole of the top of the second magnet, and the magnetic pole of the top of the first magnet is opposite to the magnetic pole of the top of the third magnet.

8. A control method for the magnetron sputtering apparatus as claimed in any one of claims 1 to 7, comprising the steps of:

9. The control method according to claim 8, the control method further comprising the steps of:

10. The control method according to claim 8 or 9, characterized by further comprising the steps of: