CN113741616A - Band-gap reference voltage source - Google Patents
Band-gap reference voltage source Download PDFInfo
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- CN113741616A CN113741616A CN202111194178.0A CN202111194178A CN113741616A CN 113741616 A CN113741616 A CN 113741616A CN 202111194178 A CN202111194178 A CN 202111194178A CN 113741616 A CN113741616 A CN 113741616A
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- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
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- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention relates to a band-gap reference voltage source. The band-gap reference voltage source comprises: a first bandgap reference circuit and a second bandgap reference circuit. The input end of the first bandgap reference circuit is used for accessing a mode selection signal, and the output end of the first bandgap reference circuit is used for connecting an electric circuit; the input end of the second band-gap reference circuit is connected with the input end of the first band-gap reference circuit, and the output end of the second band-gap reference circuit is connected with the power utilization circuit. And in the normal working mode, the mode selection signal is used for driving the first band-gap reference circuit to work, and in the low-power consumption working mode, the mode selection signal is used for driving the second band-gap reference circuit to work. The power consumption of the second band-gap reference circuit in operation is smaller than that of the first band-gap reference circuit in operation. In a normal environment, selecting a first band gap reference circuit to operate; in a complex working environment, the second band-gap reference circuit is selected to operate, so that the band-gap reference voltage source is kept in a low power consumption state, and stable operation of the band-gap reference voltage source is guaranteed.
Description
Technical Field
The application relates to the technical field of power supply of a smart grid sensor system chip, in particular to a band-gap reference voltage source.
Background
With the development of the field of smart grids, various sensors are applied to the smart grids on a large scale, and the performance of a band-gap reference voltage source circuit in a sensor chip of the smart grid directly affects the stability and the overall performance of the whole chip.
The traditional band gap reference voltage source is simple in structure and widely used in analog integrated circuits and systems on chips, but in the field of smart grids, a smart grid sensor system chip often runs in the field, the running environment is complex, the stability of the band gap reference voltage source is high, and the traditional band gap reference voltage source cannot meet the requirements of the smart grid sensor system chip.
Disclosure of Invention
In view of the above, it is necessary to provide a bandgap reference voltage source with high stability.
The embodiment of the application provides a band gap reference voltage source, includes:
the input end of the first band-gap reference circuit is used for accessing a mode selection signal, and the output end of the first band-gap reference circuit is used for connecting an electric circuit;
the input end of the second band-gap reference circuit is connected with the input end of the first band-gap reference circuit; the output end of the second band-gap reference circuit is used for connecting the power utilization circuit;
the mode selection signal is used for driving the first band-gap reference circuit to work in a normal working mode, and the mode selection signal is used for driving the second band-gap reference circuit to work in a low-power-consumption working mode;
the power consumption of the second band-gap reference circuit in operation is less than that of the first band-gap reference circuit in operation.
In one embodiment, the first bandgap reference circuit is a CMOS bandgap reference voltage source circuit;
the second band-gap reference circuit is a sub-threshold band-gap reference voltage source circuit.
In one embodiment, the subthreshold bandgap reference voltage source circuit includes:
the input end of the starting circuit is used for accessing a mode selection signal; the power supply end of the starting circuit is used for connecting a power supply;
the first end of the positive temperature coefficient current generating circuit is connected with the first output end of the starting circuit;
the first end of the negative temperature coefficient current generating circuit is connected with the second output end of the starting circuit, and the second end of the negative temperature coefficient current generating circuit is connected with the second end of the positive temperature coefficient current generating circuit;
the input end of the band-gap reference voltage output circuit is connected with the second end of the negative temperature coefficient current generating circuit, and the output end of the band-gap reference voltage output circuit is used for being connected with the power utilization circuit;
and the third end of the positive temperature coefficient current generating circuit and the power supply end of the band-gap reference voltage output circuit are both used for connecting a power supply.
In one embodiment, the starting circuit 100 includes:
the first P-type MOS tube comprises a first source electrode, a first drain electrode and a first grid electrode; the first grid is used for accessing a mode selection signal; the first drain electrode is connected with the first end of the positive temperature coefficient current generating circuit;
the second P-type MOS tube comprises a second source electrode, a second drain electrode and a second grid electrode; the second grid is used for connecting the first drain; the second drain electrode is connected with the first end of the negative temperature coefficient current generating circuit;
the first N-type MOS tube comprises a third source electrode, a third drain electrode and a third grid electrode, the third drain electrode is connected with the first drain electrode, and the third grid electrode is used for accessing a mode selection signal;
the second N-type MOS tube comprises a fourth source electrode, a fourth drain electrode and a fourth grid electrode, the fourth grid electrode is connected with the second grid electrode, and the fourth drain electrode is connected with the negative temperature coefficient current generating circuit;
the first source electrode and the second source electrode are both used for being connected with a power supply, and the third source electrode and the fourth source electrode are both grounded.
In one embodiment, the ptc current generating circuit comprises:
the third P-type MOS tube comprises a fifth source electrode, a fifth drain electrode and a fifth grid electrode, and the fifth grid electrode is respectively connected with the first output end and the fifth drain electrode of the starting circuit;
the fourth P-type MOS tube comprises a sixth source electrode, a first substrate, a sixth drain electrode and a sixth grid electrode, and the sixth source electrode is connected with the fifth drain electrode; the sixth grid electrode is connected with the sixth drain electrode, and the sixth drain electrode is connected with the second end of the negative temperature coefficient current generating circuit;
the fifth P-type MOS tube comprises a seventh source electrode, a seventh drain electrode and a seventh grid electrode, and the seventh grid electrode is connected with the second output end of the starting circuit;
the sixth P-type MOS tube comprises an eighth source electrode, an eighth drain electrode, a second substrate and an eighth grid electrode, wherein the eighth source electrode is connected with the seventh drain electrode, the eighth drain electrode is connected with the input end of the band-gap reference voltage output circuit, and the eighth grid electrode is connected with the sixth grid electrode;
and the fifth source electrode, the seventh source electrode, the first substrate and the second substrate are respectively used for being connected with a power supply.
In one embodiment, the negative temperature coefficient current generating circuit includes:
the seventh P-type MOS tube comprises a ninth source electrode, a ninth drain electrode and a ninth grid electrode, the ninth source electrode is connected with the second end of the positive temperature coefficient current generating circuit, and the ninth grid electrode is respectively connected with the second output end of the starting circuit and the input end of the band-gap reference voltage output circuit;
the eighth P-type MOS tube comprises a tenth source electrode, a tenth drain electrode and a tenth grid electrode, and the tenth source electrode is connected with the ninth grid electrode;
the ninth drain, the tenth drain and the tenth gate are all grounded.
In one embodiment, the bandgap reference voltage output circuit includes:
the third N-type MOS tube comprises an eleventh source electrode, an eleventh drain electrode and an eleventh grid electrode, and the eleventh grid electrode and the eleventh drain electrode are used for being connected with a power supply;
and the fourth N-type MOS tube comprises a twelfth source electrode, a twelfth drain electrode, a third substrate and a twelfth grid electrode, the twelfth source electrode and the third substrate are grounded, the twelfth drain electrode is connected with the eleventh source electrode and is also used for being connected with the power utilization circuit, and the twelfth grid electrode is connected with the second end of the negative temperature coefficient current generation circuit.
In one embodiment, all the MOS transistors operate in the sub-threshold region.
In one embodiment, the mode selection signal comprises a high level and a low level;
when the mode selection signal is at a low level in the normal operating mode, the mode selection signal is at a high level in the low-power-consumption operating mode;
when the mode selection signal is at a high level in the normal operating mode, the mode selection signal is at a low level in the low power consumption operating mode.
In one embodiment, the circuit is a smart grid sensor system chip, and the voltages provided by the sub-threshold low-power consumption bandgap reference voltage source circuit and the CMOS structure bandgap reference voltage source circuit for the circuit are both 1.2V.
The band-gap reference voltage source drives the working circuit to work for the first band-gap reference circuit or the second band-gap reference circuit through the mode selection signal. When the band gap reference voltage source is in a normal working mode, the mode selection signal is used for driving the first band gap reference circuit to work, when the band gap reference voltage source is in a low-power-consumption working mode, the mode selection signal is used for driving the second band gap reference circuit to work, and the power consumption when the second band gap reference circuit works is smaller than that when the first band gap reference circuit works. In a normal environment, the first band gap reference circuit is selected to operate through the mode selection signal, and in an unstable environment such as the field, the second band gap reference circuit is selected to operate through the mode selection signal, so that the band gap reference voltage source is kept in a low power consumption state, and stable operation of the band gap reference voltage source is guaranteed.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or the conventional technologies of the present application, the drawings used in the descriptions of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the following descriptions are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a block diagram of the general structure of a bandgap reference voltage source in one embodiment;
FIG. 2 is a block diagram of a bandgap reference voltage source in another embodiment;
FIG. 3 is a schematic diagram of an embodiment of a sub-threshold bandgap reference voltage source circuit;
FIG. 4 is a temperature drift simulation result of the bandgap reference voltage source circuit of the CMOS structure according to an embodiment;
FIG. 5 is a simulation result of the power supply voltage rejection ratio of the bandgap reference voltage source circuit of the CMOS structure according to an embodiment;
FIG. 6 is a simulation result of the power supply range of the bandgap reference voltage source circuit of the CMOS structure according to an embodiment;
FIG. 7 is a temperature drift simulation result of the sub-threshold bandgap reference voltage source circuit in an embodiment;
FIG. 8 is a simulation result of the supply voltage range of the sub-threshold bandgap reference voltage source circuit in an embodiment.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Embodiments of the present application are set forth in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
It will be understood that, as used herein, the terms "first," "second," and the like may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, a first resistance may be referred to as a second resistance, and similarly, a second resistance may be referred to as a first resistance, without departing from the scope of the present application. The first resistance and the second resistance are both resistances, but they are not the same resistance.
It is to be understood that "connection" in the following embodiments is to be understood as "electrical connection", "communication connection", and the like if the connected circuits, modules, units, and the like have communication of electrical signals or data with each other.
As used herein, the singular forms "a", "an" and "the" may include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises/comprising," "includes" or "including," etc., specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.
The bandgap reference voltage source of an embodiment includes a first bandgap reference circuit and a second bandgap reference circuit. The input end of the first band-gap reference circuit is used for accessing a mode selection signal, and the output end of the first band-gap reference circuit is used for connecting an electricity utilization circuit; the input end of the second band-gap reference circuit is connected with the input end of the first band-gap reference circuit; the output end of the second band-gap reference circuit is used for connecting the power utilization circuit; in the normal working mode, the mode selection signal is used for driving the first band-gap reference circuit to work, and in the low-power consumption working mode, the mode selection signal is used for driving the second band-gap reference circuit to work; the power consumption of the second band-gap reference circuit in operation is less than that of the first band-gap reference circuit in operation.
The operating modes of the bandgap reference voltage source may include a normal operating mode and a low power consumption operating mode, and different operating modes are selected and executed by the mode selection signal, as shown in fig. 1, an input end of the first bandgap reference circuit 100 is connected with an output end of the second bandgap reference circuit 200, and jointly form an input end of the bandgap reference voltage source for accessing the mode selection signal; the output end of the first bandgap reference circuit 100 is connected to the output end of the second bandgap reference circuit 200, and is used as the output end of the whole bandgap reference voltage source circuit, and is used for connecting the power utilization circuit 300 and outputting the reference voltage for the power utilization circuit 300. In the normal operating mode, under the action of the mode selection signal, the band-gap reference voltage source operates the first band-gap reference circuit 100, and turns off the second band-gap reference circuit 200; in the low power consumption mode of operation, the bandgap reference voltage source operates the second bandgap reference circuit 200 to turn off the first bandgap reference circuit 100. When the first bandgap reference circuit 100 fails to operate or the power utilization circuit 300 needs low power consumption, the second bandgap reference circuit 200 is driven to operate by the mode selection signal, so that the power consumption of the power utilization equipment is greatly reduced, and the stability of the bandgap reference voltage source is enhanced.
As shown in fig. 2, in an embodiment, the first bandgap reference circuit may employ a CMOS structure bandgap reference voltage source circuit 110, and the second bandgap reference circuit may employ a sub-threshold bandgap reference voltage source circuit 210. The input end of the CMOS structure band-gap reference voltage source circuit 110 is connected to the input end of the sub-threshold band-gap reference voltage source circuit 210, and serves as the input end of the whole band-gap reference voltage source circuit, and is used for accessing a mode selection signal; the output terminal of the CMOS structure bandgap reference voltage source circuit 110 is connected to the output terminal of the sub-threshold bandgap reference voltage source circuit 210, and serves as the output terminal of the whole bandgap reference voltage source circuit, and is used for connecting the power consumption circuit 300 and outputting voltage information to the power consumption circuit 300. The CMOS bandgap reference voltage source circuit 110 has the characteristics of a low temperature drift coefficient and a high power supply voltage rejection ratio. The sub-threshold bandgap reference voltage source circuit 210 has the characteristics of low power consumption and low temperature drift coefficient. The bandgap reference voltage source operates the CMOS bandgap reference circuit 110 in the normal operation mode, and operates the sub-threshold bandgap reference voltage source circuit 210 in the low power consumption operation mode, so that the bandgap reference voltage source has the characteristics of low power consumption, low temperature drift coefficient and high power supply voltage rejection ratio.
As shown in fig. 3, in an embodiment, the subthreshold bandgap reference voltage source circuit includes: a start-up circuit 211, a negative temperature coefficient current generating circuit 212, a positive temperature coefficient current generating circuit 213 and a bandgap reference voltage output circuit 214. The input end of the starting circuit 211 is used for accessing a mode selection signal; the power supply end of the starting circuit 211 is used for connecting a power supply; the first terminal of the positive temperature coefficient current generating circuit 213 is connected to the first output terminal of the start circuit 211; a first end of the negative temperature coefficient current generating circuit 212 is connected with a second output end of the starting circuit 211, and a second end of the negative temperature coefficient current generating circuit 212 is connected with a second end of the positive temperature coefficient current generating circuit 213; the input end of the bandgap reference voltage output circuit 214 is connected with the second end of the negative temperature coefficient current generating circuit 212, and the output end of the bandgap reference voltage output circuit 214 is used for connecting with an electric circuit; the third terminal of the positive temperature coefficient current generating circuit 213 and the power supply terminal of the bandgap reference voltage output circuit 214 are both used for connecting a power supply.
Specifically, after receiving the mode selection signal for starting the low power consumption operation mode, the start circuit 211 respectively turns on the negative temperature coefficient generation circuit 212 and the positive temperature coefficient generation circuit 213, so that the whole sub-threshold bandgap reference voltage source circuit is in a conduction operation state. After being turned on, the negative temperature coefficient generating circuit 212 is used for generating a current branch inversely proportional to the absolute temperature, and the positive temperature coefficient generating circuit 213 is used for generating a current branch directly proportional to the absolute temperature. The two branches are converged at the band-gap reference voltage output circuit 214 and mutually offset the influence of temperature, the finally output voltage can be extremely insensitive to the temperature, MOS (metal oxide semiconductor) tubes in all the modules work in a sub-threshold region, the power consumption is extremely low, and when the sub-threshold band-gap reference voltage source circuit is operated, the low-power-consumption operation of the band-gap reference voltage source can be realized.
Further, as shown in fig. 3, in an embodiment, the starting circuit 211 includes: the first P-type MOS transistor PM1, the first P-type MOS transistor PM1 comprises a first source electrode, a first drain electrode and a first gate electrode; the first grid is used for accessing a mode selection signal; the first drain is connected to the first end of the positive temperature coefficient current generating circuit 213; the second P-type MOS transistor PM2, the second P-type MOS transistor PM2 includes a second source, a second drain and a second gate; the second grid is used for connecting the first drain; the second drain is connected to the first end of the negative temperature coefficient current generating circuit 212; the first N-type MOS transistor NM1, the first N-type MOS transistor NM1 includes a third source, a third drain and a third gate, the third drain is connected to the first drain, and the third gate is used for accessing a mode selection signal; the second N-type MOS transistor NM2, the second N-type MOS transistor NM2 includes a fourth source, a fourth drain and a fourth gate, the fourth gate is connected to the second gate, and the fourth drain is connected to the negative temperature coefficient current generating circuit 212; the first source electrode and the second source electrode are both used for being connected with a power supply, and the third source electrode and the fourth source electrode are both grounded. Given an implementation of the start-up circuit 211, the start-up circuit 211 may further include other components based on the circuit, that is, a circuit capable of implementing a switch state change based on a mode selection signal belongs to the protection range of the start-up circuit 211.
As shown in fig. 3, in one embodiment, the negative temperature coefficient circuit generating circuit includes 212: the third P-type MOS transistor PM3, the third P-type MOS transistor PM3 includes a fifth source, a fifth drain and a fifth gate, and the fifth gate is connected to the first output end and the fifth drain of the start circuit 211, respectively; the fourth P-type MOS transistor PM4, the fourth P-type MOS transistor PM4 comprises a sixth source electrode, a first substrate, a sixth drain electrode and a sixth gate electrode, and the sixth source electrode is connected with the fifth drain electrode; the sixth gate is connected to the sixth drain, which is connected to the second end of the ptc current generating circuit 212; the fifth P-type MOS transistor PM5, the fifth P-type MOS transistor PM5 includes a seventh source, a seventh drain, and a seventh gate, and the seventh gate is connected to the second output end of the start-up circuit 211; the sixth P-type MOS transistor PM6, the sixth P-type MOS transistor PM6 includes an eighth source, an eighth drain, the second substrate, and an eighth gate, the eighth source is connected to the seventh drain, the eighth drain is connected to the input terminal of the bandgap reference voltage output circuit 214, and the eighth gate is connected to the sixth gate; and the fifth source electrode, the seventh source electrode, the first substrate and the second substrate are respectively used for being connected with a power supply.
As shown in fig. 3, in an embodiment, the ptc circuit generating circuit 213 includes: a seventh P-type MOS transistor PM7, wherein the seventh P-type MOS transistor PM7 includes a ninth source, a ninth drain, and a ninth gate, the ninth source is connected to the second end of the negative temperature coefficient current generating circuit 212, and the ninth gate is connected to the second output end of the starting circuit 211 and the input end of the bandgap reference voltage output circuit 214, respectively; the eighth P-type MOS transistor PM8, the eighth P-type MOS transistor PM8 includes a tenth source, a tenth drain and a tenth gate, and the tenth source is connected to the ninth gate; the ninth drain, the tenth drain and the tenth gate are all grounded.
As shown in fig. 3, in one embodiment, the bandgap reference voltage output circuit 214 includes: a third N-type MOS transistor NM3, where the third N-type MOS transistor includes an eleventh source, an eleventh drain, and an eleventh gate, and the eleventh gate and the eleventh drain are both used for being connected to a power supply; the fourth N-type MOS transistor NM4, the fourth N-type MOS transistor NM4 includes a twelfth source, a twelfth drain, a third substrate, and a twelfth gate, the twelfth source and the third substrate are all grounded, the twelfth drain is connected to the eleventh source, the twelfth drain is further used for connecting the power utilization circuit, and the twelfth gate is connected to the second end of the negative temperature coefficient current generation circuit 212.
To better explain the implementation process of the bandgap reference voltage source provided by the present application, the minimum component combination manner shown in fig. 3 is taken as an example for explanation, that is, in an embodiment, the sub-threshold bandgap reference voltage source circuit may include: the first P-type MOS transistor PM1, the first P-type MOS transistor PM1 comprises a first source electrode, a first drain electrode and a first gate electrode; the first source is connected with a power supply. The second P-type MOS transistor PM2, the second P-type MOS transistor PM2 includes a second source, a second drain and a second gate; the second source is connected with the power supply, and the second grid is connected with the first drain. The first N-type MOS transistor NM1, the first N-type MOS transistor NM1 includes a third source, a third drain and a third gate; the third drain electrode is connected with the first drain electrode, the third source electrode is grounded, and the third grid electrode is connected with the first grid electrode and used as an input end of the whole circuit to access an external mode selection signal. The second N-type MOS transistor NM2, the second N-type MOS transistor NM2 includes a fourth source, a fourth drain and a fourth gate; the fourth source electrode is grounded, the fourth drain electrode is connected with the second drain electrode, and the fourth grid electrode is connected with the second grid electrode. A third P-type MOS transistor PM3, the third P-type MOS transistor including a fifth source, a fifth drain, and a fifth gate; the fifth source is grounded, the fifth drain is connected with the fifth grid, and the fifth grid is connected with the first drain. The fourth P-type MOS transistor PM4, the fourth P-type MOS transistor PM4 includes a sixth source, a first substrate, a sixth drain and a sixth gate; the first substrate is connected with a power supply, and the sixth source electrode is connected with the fifth drain electrode. The fifth P-type MOS transistor PM5, the fifth P-type MOS transistor PM5 includes a seventh source, a seventh drain and a seventh gate; the seventh source is connected with the power supply, and the seventh grid is connected with the fifth grid. The sixth P-type MOS transistor PM6, the sixth P-type MOS transistor PM6 includes an eighth source, an eighth drain, a second substrate, and an eighth gate; the eighth source is connected with the seventh drain, the second substrate is connected with a power supply, and the eighth gate is connected with the sixth gate. The seventh P-type MOS transistor PM7, the seventh P-type MOS transistor PM7 includes a ninth source, a ninth drain and a ninth gate; the ninth source is connected with the eighth gate, the ninth drain is grounded, and the ninth gate is connected with the fourth drain. The eighth P-type MOS transistor PM8, the eighth P-type MOS transistor PM8 includes a tenth source, a tenth drain and a tenth gate; the tenth source is connected to the ninth gate and the eighth drain, and the tenth drain and the tenth gate are grounded. The third N-type MOS transistor NM3, the third N-type MOS transistor NM3 includes an eleventh source, an eleventh drain and an eleventh gate; the eleventh drain and the eleventh gate are connected to a power supply. A fourth N-type MOS transistor NM4, the fourth N-type MOS transistor NM4 including a twelfth source, a twelfth drain, a third substrate and a twelfth gate; the twelfth source electrode is grounded with the third substrate, the twelfth drain electrode is connected with the eleventh source electrode to serve as an output end to output a voltage signal to the electric circuit, and the twelfth grid electrode is connected with the tenth source electrode.
Specifically, the gate of the PM1 and the gate of the NM1 are used for receiving a mode selection signal, when the bandgap reference voltage source is in a low power consumption operating mode, the mode selection signal outputs a low level signal, the PM1 is turned on, the NM1 is turned off, the eleventh source can generate a current with a positive temperature coefficient, the twelfth drain can generate a current with a negative temperature coefficient, and after reasonable width-to-length ratios are respectively set for channels of the third N-type MOS transistor NM3 and the fourth N-type MOS transistor NM4, the output voltage of the final subthreshold bandgap reference voltage source circuit can be made extremely insensitive to temperature, and all the MOS transistors operate in a subthreshold region, so that the power consumption is extremely low.
In one embodiment, the mode select signal includes a high level and a low level; when the mode selection signal is at a low level in the normal operating mode, the mode selection signal is at a high level in the low-power-consumption operating mode; when the mode selection signal is at a high level in the normal operating mode, the mode selection signal is at a low level in the low power consumption operating mode. When the low level signal controls the band-gap reference voltage source to operate in a normal working mode, inputting the high level signal can start a low power consumption working mode; when the high-level signal controls the band-gap reference voltage source to operate the low-power consumption working mode, the input low-level signal can start the normal working mode. The high and low levels of the mode selection signal can be set as described in the above embodiments, so as to satisfy the criteria that the CMOS structure bandgap reference voltage source circuit operates in the normal mode, the sub-threshold bandgap reference voltage source circuit is turned off, and the CMOS structure bandgap reference voltage source circuit is turned off and the sub-threshold bandgap reference voltage source circuit operates in the low power consumption operating mode.
Considering that the common working voltage of the smart grid sensor system chip is 1.2V, in an embodiment, when the power circuit is the smart grid sensor system chip, the output voltage of the sub-threshold low-power-consumption band-gap reference voltage source circuit is 1.2V, and the output voltage of the CMOS-structured band-gap reference voltage source circuit is 1.2V, so that stable 1.2V voltage can be provided for the smart grid sensor system chip in different working modes, especially in an application scene with large outdoor environment variation, the stability of the power supply voltage can be still maintained, and the stable work of the smart grid sensor system chip is guaranteed. In addition, under the field working environment, the power supply of the band-gap reference voltage source circuit with the CMOS structure is switched to the power supply of the band-gap reference voltage source circuit with the sub-threshold low power consumption through the mode selection signal driving, the effective working time of the band-gap reference voltage source in the field can be prolonged by utilizing the low power consumption characteristic of the MOS tube in the sub-threshold region, the service life of the band-gap reference voltage source is greatly prolonged, the replacement frequency of the band-gap reference voltage source under the field working environment is reduced, and the maintenance cost is reduced.
In one or more embodiments of the invention, the CMOS structure band-gap reference voltage source circuit uses a P input folding cascode operational amplifier, and has high gain and power supply voltage suppression ratio and large swing and gain. If the cost and the performance need to be compromised, the CMOS structure band-gap reference voltage source circuit can adopt a folded cascode operational amplifier, and the low-frequency closed loop gain is higher, so that the CMOS structure band-gap reference circuit has higher power supply voltage rejection ratio at low frequency. In the smart grid environment, the fluctuation frequency of the power supply voltage for the sensor system chip is generally 50Hz to 60Hz, so that the performance requirement can be met by using the folded cascode operational amplifier with high closed-loop gain.
In order to prove the characteristics of the CMOS structure band-gap reference circuit such as low temperature drift and high power supply voltage rejection ratio. For the temperature drift simulation of a selected CMOS structure bandgap reference voltage source circuit, the simulation result is shown in fig. 4, when the temperature is changed from-40 ℃ to 85 ℃, the output voltage of the CMOS structure bandgap reference voltage source circuit is changed from 1.20192V to 1.20271V, the temperature change rate is 9.29 μ V/c, i.e. the temperature drift coefficient is 7.73 ppm/c. The simulation result of the power supply voltage suppression ratio of a selected CMOS structure band-gap reference voltage source circuit is shown in figure 5, the power supply voltage suppression ratio of the CMOS structure band-gap reference voltage source circuit reaches-78 dB at low frequency, and the CMOS structure band-gap reference voltage source circuit has good suppression capability on power supply voltage fluctuation.
The power supply voltage range of a selected CMOS structure band-gap reference voltage source circuit is simulated, and the simulation result is shown in figure 6, and the CMOS structure band-gap reference voltage source circuit can provide stable reference voltage of 1.2V when the power supply voltage changes within the range of 1.3V-9.4V.
Therefore, in a normal environment, the band-gap reference voltage source starts a normal working mode through the mode selection signal and operates the CMOS structure band-gap reference circuit, so that the stability is better kept when the power supply voltage fluctuates.
When the mode selection signal drives a low power consumption mode in the band-gap reference voltage source to operate, the sub-threshold band-gap reference voltage source circuit starts to operate, and the sub-threshold band-gap reference voltage source circuit has the characteristics of low power consumption and low temperature drift.
In order to prove that the sub-threshold bandgap reference voltage source circuit has the characteristics of low power consumption and low temperature drift, the temperature drift of the sub-threshold bandgap reference voltage source circuit is simulated, and the simulation result is shown in fig. 7, when the temperature is changed within the range of-40 ℃ to 120 ℃, the output voltage of the sub-threshold bandgap reference voltage source circuit is changed from 1.207239V to 1.206958V, the temperature change rate is 1.76 μ V/DEG C, namely the temperature drift coefficient is 1.45 ppm/DEG C. The power consumption of the sub-threshold band-gap reference voltage source circuit in any embodiment is simulated and measured, and the power consumption of the sub-threshold band-gap reference voltage source is as follows: 1.6V × 1.49 μ a ═ 2.38 μ W. The sub-threshold band-gap reference voltage source circuit can provide reference voltage with nano watt-level power consumption by reducing power supply voltage and output voltage, but the requirement of other modules of the smart grid sensor system chip on the 1.2V reference voltage is large in consideration of voltage compatibility, and the sub-threshold band-gap reference voltage source circuit outputs the 1.2V reference voltage to work according to actual requirements.
When the sub-threshold reference voltage source circuit in any of the above embodiments is simulated in the supply voltage range, as shown in fig. 8, the sub-threshold bandgap reference voltage source circuit has a poor suppression capability and stability capability for the supply voltage fluctuation, because the MOS transistor operating in the weak inversion region will increase the reduction of the supply voltage suppression ratio, because a small change in the supply voltage will affect the exponential change of the current.
All simulation experiments show that the energy consumption of the band-gap reference voltage source in the scheme can be as low as 2.38 microwatts in a low-power-consumption working mode; in a normal mode, the temperature drift coefficient is 7.73 ppm/DEG C, and in a low power consumption mode, the temperature drift coefficient is 1.45 ppm/DEG C; in a normal mode, the power supply voltage rejection ratio reaches-78 dB, and the sub-threshold band-gap reference voltage source and the CMOS structure band-gap reference voltage source can output 1.2V output voltage. Therefore, the band-gap reference voltage element proposed in the scheme has the characteristics of low power consumption, low temperature drift and high power supply voltage suppression ratio.
The smart grid sensor system chip usually works in the field for a long time, the working environment is complex, and the requirement on low power consumption is high. Therefore, the band-gap reference voltage source with low power consumption, low temperature drift coefficient, high power supply voltage rejection ratio is provided, so that the power consumption of the smart grid sensor system chip is greatly reduced, and the service life of the whole battery is greatly prolonged under the complex working conditions of field and the like. The method is suitable for the characteristics of complex field working environment, limited battery capacity and the like of the smart grid sensor. In addition, considering that the reference voltage of the smart grid sensor chip is generally in high demand for 1.2V, the output voltages of the first band-gap reference circuit and the second band-gap reference circuit in the band-gap reference voltage source are both 1.2V.
Because a large-scale digital processor circuit is arranged in a system chip of the intelligent power grid sensor, and noise brought by the system chip is concentrated on 1-1KHz, a band gap reference voltage source needs to be ensured to have enough power supply voltage suppression ratio at 1 KHz. From the simulation results, the bandgap reference voltage source in the above embodiment ensures a certain power supply voltage rejection ratio at high frequency. If the power supply voltage rejection ratio at high frequency after the replacement process is not enough, a capacitor-connected MOS tube can be connected between the output end and the ground, the area consumption is low, and a certain power supply voltage rejection ratio can be improved.
In the description herein, references to the description of "some embodiments," "other embodiments," "desired embodiments," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, a schematic description of the above terminology may not necessarily refer to the same embodiment or example.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A bandgap reference voltage source, comprising:
the input end of the first band-gap reference circuit is used for accessing a mode selection signal, and the output end of the first band-gap reference circuit is used for connecting an electric circuit;
the input end of the second band-gap reference circuit is connected with the input end of the first band-gap reference circuit; the output end of the second band-gap reference circuit is used for being connected with the power utilization circuit;
in a normal working mode, the mode selection signal is used for driving the first band-gap reference circuit to work, and in a low-power-consumption working mode, the mode selection signal is used for driving the second band-gap reference circuit to work;
the power consumption of the second band-gap reference circuit in operation is smaller than that of the first band-gap reference circuit in operation.
2. The bandgap reference voltage source according to claim 1, wherein the first bandgap reference circuit is a CMOS structure bandgap reference voltage source circuit;
the second band-gap reference circuit is a sub-threshold band-gap reference voltage source circuit.
3. The bandgap reference voltage source of claim 2, wherein the sub-threshold bandgap reference voltage source circuit comprises:
the input end of the starting circuit is used for accessing the mode selection signal; the power supply end of the starting circuit is used for connecting a power supply;
the first end of the positive temperature coefficient current generating circuit is connected with the first output end of the starting circuit;
the first end of the negative temperature coefficient current generating circuit is connected with the second output end of the starting circuit, and the second end of the negative temperature coefficient current generating circuit is connected with the second end of the positive temperature coefficient current generating circuit;
the input end of the band-gap reference voltage output circuit is connected with the second end of the negative temperature coefficient current generating circuit, and the output end of the band-gap reference voltage output circuit is used for being connected with the power utilization circuit;
and the third end of the positive temperature coefficient current generating circuit and the power supply end of the band-gap reference voltage output circuit are both used for being connected with the power supply.
4. The bandgap reference voltage source of claim 3, wherein the start-up circuit comprises:
the first P-type MOS tube comprises a first source electrode, a first drain electrode and a first grid electrode; the first grid is used for switching in the mode selection signal; the first drain electrode is connected with the first end of the positive temperature coefficient current generating circuit;
the second P-type MOS tube comprises a second source electrode, a second drain electrode and a second grid electrode; the second grid is used for connecting the first drain; the second drain electrode is connected with the first end of the negative temperature coefficient current generating circuit;
the first N-type MOS tube comprises a third source electrode, a third drain electrode and a third grid electrode, the third drain electrode is connected with the first drain electrode, and the third grid electrode is used for accessing the mode selection signal;
the second N-type MOS tube comprises a fourth source electrode, a fourth drain electrode and a fourth grid electrode, the fourth grid electrode is connected with the second grid electrode, and the fourth drain electrode is connected with the negative temperature coefficient current generating circuit;
the first source electrode and the second source electrode are both used for being connected with a power supply, and the third source electrode and the fourth source electrode are both grounded.
5. The bandgap reference voltage source of claim 3, wherein the positive temperature coefficient current generating circuit comprises:
the third P-type MOS tube comprises a fifth source electrode, a fifth drain electrode and a fifth grid electrode, and the fifth grid electrode is respectively connected with the first output end of the starting circuit and the fifth drain electrode;
the fourth P-type MOS tube comprises a sixth source electrode, a first substrate, a sixth drain electrode and a sixth grid electrode, and the sixth source electrode is connected with the fifth drain electrode; the sixth grid electrode is connected with the sixth drain electrode, and the sixth drain electrode is connected with the second end of the negative temperature coefficient current generating circuit;
the fifth P-type MOS tube comprises a seventh source electrode, a seventh drain electrode and a seventh grid electrode, and the seventh grid electrode is connected with the second output end of the starting circuit;
the sixth P-type MOS tube comprises an eighth source electrode, an eighth drain electrode, a second substrate and an eighth grid electrode, wherein the eighth source electrode is connected with the seventh drain electrode, the eighth drain electrode is connected with the input end of the band-gap reference voltage output circuit, and the eighth grid electrode is connected with the sixth grid electrode;
the fifth source electrode, the seventh source electrode, the first substrate and the second substrate are respectively used for being connected with the power supply.
6. The bandgap reference voltage source of claim 3, wherein the negative temperature coefficient current generating circuit comprises:
the seventh P-type MOS tube comprises a ninth source electrode, a ninth drain electrode and a ninth grid electrode, the ninth source electrode is connected with the second end of the positive temperature coefficient current generating circuit, and the ninth grid electrode is respectively connected with the second output end of the starting circuit and the input end of the band-gap reference voltage output circuit;
an eighth P-type MOS transistor, including a tenth source, a tenth drain, and a tenth gate, the tenth source being connected to the ninth gate;
the ninth drain, the tenth drain and the tenth gate are all grounded.
7. The bandgap reference voltage source of claim 3, wherein the bandgap reference voltage output circuit comprises:
the third N-type MOS tube comprises an eleventh source electrode, an eleventh drain electrode and an eleventh grid electrode, and the eleventh grid electrode and the eleventh drain electrode are used for being connected with the power supply;
the fourth N-type MOS tube comprises a twelfth source electrode, a twelfth drain electrode, a third substrate and a twelfth grid electrode, the twelfth source electrode and the third substrate are grounded, the twelfth drain electrode is connected with the eleventh source electrode and is also used for being connected with the power utilization circuit, and the twelfth grid electrode is connected with the second end of the negative temperature coefficient current generation circuit.
8. The bandgap reference voltage source according to any of claims 4 to 7, wherein all MOS transistors operate in the sub-threshold region.
9. The bandgap reference voltage source of claim 1, 2, 3, 5, 6 or 7, wherein the mode selection signal comprises a high level and a low level;
when the mode selection signal is at a low level in the normal working mode, the mode selection signal is at a high level in the low-power consumption working mode;
and when the mode selection signal is at a high level in the normal working mode, the mode selection signal is at a low level in the low-power consumption working mode.
10. The bandgap reference voltage source according to any of claims 1 to 7, wherein the power consuming circuit is a smart grid sensor system chip, and the voltages provided by the sub-threshold bandgap reference voltage source circuit and the CMOS structure bandgap reference voltage source circuit for the power consuming circuit are both 1.2V.
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