CN113740608A - CTLM specific contact resistance measuring device and specific contact resistance measuring equipment - Google Patents
CTLM specific contact resistance measuring device and specific contact resistance measuring equipment Download PDFInfo
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- 238000005259 measurement Methods 0.000 claims description 12
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 2
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- 238000012986 modification Methods 0.000 description 2
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- 239000004020 conductor Substances 0.000 description 1
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- 239000011810 insulating material Substances 0.000 description 1
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- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention discloses a CTLM specific contact resistance measuring device, which comprises a voltage testing circuit, a current testing circuit and a voltage-sharing circuit, wherein the voltage testing circuit is connected with the voltage-sharing circuit; the voltage-sharing circuit comprises an outer electrode common end and a plurality of outer electrode leads, wherein the input end of each outer electrode lead is connected to the outer electrode common end, and the output end of each outer electrode lead is connected to the outer edge of an outer electrode of the CTLM structure to be tested; the output ends of the outer electrode leads are uniformly distributed at the edge of the outer electrode; the voltage test circuit comprises two voltage probes, and the two voltage probes are respectively used for connecting an inner electrode and an outer electrode of the CTLM structure to be tested; the current test circuit comprises two current probes, and the two current probes are respectively used for connecting the inner electrode of the CTLM structure to be tested and the common end of the outer electrode. The invention improves the uniformity of the potential distribution. The invention also provides specific contact resistance measuring equipment with the beneficial effects.
Description
Technical Field
The invention relates to the field of specific contact resistance measurement, in particular to a CTLM specific contact resistance measuring device and a CTLM specific contact resistance measuring device.
Background
The metal-to-semiconductor contact exists in most semiconductor devices, including the connection of the source and drain electrodes to external circuits in integrated circuits, the connection position of the piezoresistive structure to external circuits in MEMS pressure sensors, and the like. High quality ohmic contacts are necessary to connect the device to external circuitry. The study of high quality ohmic contacts, both integrated circuits and MEMS devices, is a vital task. High quality ohmic contacts require low specific contact resistance and good stability. Especially in high-temperature and high-power devices, the low specific contact resistance and good high-temperature stability of ohmic contact are the keys for ensuring the normal operation of the devices.
The specific contact resistance is one of the key parameters for measuring the quality of ohmic contact, and the accurate extraction of the specific contact resistance parameter plays an important role in the simulation and design of the device. Therefore, the measurement of the specific contact resistance is particularly important.
The precondition of the traditional CTLM (circular electrode transmission line model method or circular transmission line model method) test model is that the metal electrodes are equipotential. However, since the metal electrode is made of metal silicide and the remaining metal layer in the manufacturing process of the conventional test structure, the metal electrode is no longer an equipotential surface because of the higher resistivity of the metal electrode. When the CTLM structure is tested by adopting four probes, two current probes and two voltage probes are respectively tied on the inner electrode and the outer electrode. Since the metal electrodes are not equipotential surfaces, the potential of the voltage probe varies with the test location. For example, when a current flows into the test structure from the outer electrode, on the outer electrode, the potential is high at a position close to the current probe and low at a position far from the current probe, as shown in FIG. 1 (two voltage probes shown in FIG. 1 are states when the same probe, i.e., the outer electrode voltage probe, is at different positions). Therefore, the measurement voltage changes along with the position change of the outer electrode voltage probe, and larger measurement errors and even parameter measurement errors are caused.
Therefore, how to avoid the measurement error caused by the position difference of the voltage probe is an urgent problem to be solved by those skilled in the art.
Disclosure of Invention
The invention aims to provide a CTLM specific contact resistance measuring device and a CTLM specific contact resistance measuring device, which aim to eliminate the influence caused by measuring errors caused by different positions of voltage probes in the prior art as much as possible.
In order to solve the technical problem, the invention provides a CTLM specific contact resistance measuring device, which comprises a voltage testing circuit, a current testing circuit and a voltage-sharing circuit, wherein the voltage testing circuit is connected with the voltage-sharing circuit;
the voltage-sharing circuit comprises an outer electrode common end and a plurality of outer electrode leads, wherein the input end of each outer electrode lead is connected to the outer electrode common end, and the output end of each outer electrode lead is connected to the outer edge of an outer electrode of the CTLM structure to be tested;
the output ends of the outer electrode leads are uniformly distributed at the edge of the outer electrode;
the voltage test circuit comprises two voltage probes, and the two voltage probes are respectively used for connecting an inner electrode and an outer electrode of the CTLM structure to be tested;
the current test circuit comprises two current probes, and the two current probes are respectively used for connecting the inner electrode of the CTLM structure to be tested and the common end of the outer electrode.
Optionally, the CTLM specific contact resistance measuring device further includes an inner electrode covering layer and an outer electrode covering layer;
the inner electrode covering layer and the outer electrode covering layer are conductive layers and are arranged in a non-contact manner;
the inner electrode covering layer is arranged on the surface of the inner electrode and is electrically connected with the inner electrode;
the outer electrode covering layer is arranged on the surface of the outer electrode and is electrically connected with the outer electrode.
Optionally, in the CTLM specific contact resistance measuring device, the inner electrode cover layer and the outer electrode cover layer are platinum metal layers or copper metal layers.
Optionally, an insulating filling layer is further included between the outer electrode and the inner electrode in the CTLM specific contact resistance measuring device.
Optionally, in the CTLM specific contact resistance measuring apparatus, the insulating filling layer is a silicon dioxide layer.
Optionally, the CTLM specific contact resistance measuring device further includes an insulating isolation layer;
the insulation isolation layer is arranged on the surface of the semiconductor layer of the CTLM structure to be tested and outside the outer electrode;
the voltage-sharing circuit is a metal epitaxial layer arranged on the surface of the insulating isolation layer.
Optionally, in the CTLM specific contact resistance measuring apparatus, the insulating isolation layer and the voltage equalizing circuit are structural layers obtained by photolithography and a metal lift-off process.
Optionally, in the CTLM specific contact resistance measuring apparatus, the insulating isolation layer is a silicon dioxide layer.
Optionally, in the CTLM specific contact resistance measuring device, when the external electrode is a square external electrode, the voltage equalizing circuit includes four external electrode leads;
the output ends of the four outer electrode lead wires are respectively connected to four vertex angles of the square outer electrode.
A specific contact resistance measuring apparatus comprising a CTLM specific contact resistance measuring device as described in any of the above.
The invention provides a CTLM (China Mobile Teller machine) specific contact resistance measuring device, which comprises a voltage testing circuit, a current testing circuit and a voltage-sharing circuit, wherein the voltage testing circuit is connected with the voltage-sharing circuit; the voltage-sharing circuit comprises an outer electrode common end and a plurality of outer electrode leads, wherein the input end of each outer electrode lead is connected to the outer electrode common end, and the output end of each outer electrode lead is connected to the outer edge of an outer electrode of the CTLM structure to be tested; the output ends of the outer electrode leads are uniformly distributed at the edge of the outer electrode; the voltage test circuit comprises two voltage probes, and the two voltage probes are respectively used for connecting an inner electrode and an outer electrode of the CTLM structure to be tested; the current test circuit comprises two current probes, and the two current probes are respectively used for connecting the inner electrode of the CTLM structure to be tested and the common end of the outer electrode. The invention realizes the equipotential of the contact points of the outer electrode and the output end of the outer electrode lead by using the voltage-sharing circuit, and the output points of the outer electrode are uniformly distributed on the outer edge of the outer electrode, so that the current can uniformly flow into the structure to be tested of the CTLM from all directions, the potential of the outer electrode in a circle close to the middle ring tends to be consistent, the uniformity of the potential distribution between the inner electrode and the outer electrode is greatly improved, and the accuracy of specific contact resistance measurement is improved. The invention also provides specific contact resistance measuring equipment with the beneficial effects.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
FIG. 1 is a voltage equipotential diagram of inner and outer electrodes in a CTLM test according to the prior art;
fig. 2 is a schematic top view of a specific embodiment of a CTLM specific contact resistance measuring device according to the present invention;
fig. 3 is a schematic cross-sectional structure diagram of an embodiment of a CTLM specific contact resistance measuring device provided in the present invention;
fig. 4 is another schematic cross-sectional structure diagram of an embodiment of a CTLM specific contact resistance measuring device according to the present invention;
fig. 5 is a schematic cross-sectional structure diagram of another embodiment of a CTLM specific contact resistance measuring device provided in the present invention;
fig. 6 is a schematic cross-sectional structure diagram of another embodiment of a CTLM specific contact resistance measuring device according to the present invention;
FIG. 7 is a top view of a CTLM test structure;
FIG. 8 shows R in the CTLM testtSchematic representation of the relationship of/C-d.
Detailed Description
The circular electrode TLM method (circular transmission line method: CTLM) will be briefly described. The CTLM method is suitable for testing the length of more than 10^ -8 omega cm2The conventional CTLM test structure is shown in FIG. 7, and measures the specific contact resistanceThe specific contact resistance requires a set of CTLM test structures that require the radius r of the inner electrode0The same, the width d of the ring between the inner and outer electrodes is different, and the radius r of the outer ring is differentnAt different distances dnIncrease in total resistance RtAnd dnThere is a certain relation between them, the measured total resistance RtComprises the following steps:
wherein R isshIs a square resistance, LtFor transmission line length, through Rt-dnCan yield RshAnd LtThe value of (c).
And because:
specific contact resistance ρ can be obtainedc：
ρc＝Lt 2*Rsh
When the distance d < r of the circular rings0By Taylor series expansion, RtThe calculation formula of (c) can be simplified as:
wherein C is a correction factor:
wherein R istC and dnIn linear relation, R can be directly extracted according to the fitted straight lineshAnd LtThe value of (d), i.e. the specific contact resistance ρc。
In order that those skilled in the art will better understand the disclosure, the invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The core of the invention is to provide a CTLM specific contact resistance measuring device, the structure schematic diagram of one embodiment of which is shown in fig. 2 and fig. 3, and is called as the first embodiment, and the CTLM specific contact resistance measuring device comprises a voltage testing circuit, a current testing circuit and a voltage equalizing circuit;
the voltage-sharing circuit comprises an outer electrode common end 110 and a plurality of outer electrode leads 120, wherein the input end of each outer electrode lead is connected to the outer electrode common end, and the output end of each outer electrode lead is connected to the outer edge of an outer electrode of the structure to be tested of the CTLM;
the output ends of the outer electrode leads are uniformly distributed at the edge of the outer electrode;
the voltage test circuit comprises two voltage probes 210, and the two voltage probes 210 are respectively used for connecting an inner electrode and an outer electrode of the structure to be tested of the CTLM;
the current test circuit comprises two current probes 310, and the two current probes 310 are respectively used for connecting the inner electrode of the structure to be tested of the CTLM and the common end of the outer electrode.
As a preferred embodiment, the CTLM specific contact resistance measuring device further includes an insulating isolation layer 400;
the insulation isolation layer is arranged on the surface of the semiconductor layer of the CTLM structure to be tested and outside the outer electrode;
the voltage-sharing circuit is a metal epitaxial layer arranged on the surface of the insulating isolation layer.
The insulating isolation layer is arranged on the outer side of the outer electrode, so that the outer electrode lead is prevented from contacting with the outer electrode outside a preset position, errors are caused, the final test result is influenced, the voltage-sharing circuit is made into an epitaxial layer arranged on the surface of the insulating isolation layer, the production process can be greatly simplified, the test efficiency is improved, and the finished product is high in yield, good in external impact resistance and high in working reliability.
Furthermore, the insulating isolation layer and the voltage-sharing circuit are structural layers obtained by a photoetching method and a metal stripping process, and further, the insulating isolation layer is a silicon dioxide layer, so that silicon dioxide is convenient to deposit and low in cost, and of course, other insulating materials can be adopted to arrange the insulating isolation layer according to actual conditions.
In addition, as shown in fig. 2, when the external electrode is a square external electrode, the voltage equalizing circuit includes four external electrode leads;
the output ends of the four outer electrode lead wires are respectively connected to four vertex angles of the square outer electrode, so that the electric potentials on the outer electrodes are distributed in a concentric circle shape, and the electric potentials tend to be consistent in all directions close to the center circle.
Fig. 3 and 4 are schematic cross-sectional structural views of a connection between the CTLM specific contact resistance measuring device and the CTLM structure to be measured in a working state, where fig. 3 corresponds to a cross section at a dotted line (i) in fig. 2, and fig. 4 corresponds to a cross section at a dotted line (ii) in fig. 2.
During testing, the positions of the two voltage probes and the two current probes of each test structure are shown in fig. 2, the current of the current probe is I, the potential difference between the voltage probes is V, and then R can be obtainedtV/I. In a group of CTLM test structures, the distance d between the inner electrode and the outer electrode of different test structures is different, and R is correspondingly obtainedtIs also different according to RtAnd d are as follows:
wherein dn is d1，d2，d3，d4，d5.., representing a set of structuresD for the 1 st structure and d for the 2 nd structure.
To obtain the following formula:
it can be seen that RtC and dnIn a linear relationship, as shown in FIG. 8, RtC and dnA straight line can be fitted, and the intersection point of the fitted straight line and the x axis is-2LtThe slope of the fitted straight line is Rsh/2πr0I.e. can be according to Rt/C-d image extraction parameter RshAnd LtThus, it is possible to find:
ρc＝RwhLt 2
the more uniform the potential distribution, the measured resistance RtThe more accurate the line is, the more accurate the straight line is fitted according to fig. 8, and the more accurate the extracted parameters are, so that a more accurate value of the specific contact resistance can be obtained.
The invention provides a CTLM (China Mobile Teller machine) specific contact resistance measuring device, which comprises a voltage testing circuit, a current testing circuit and a voltage-sharing circuit, wherein the voltage testing circuit is connected with the voltage-sharing circuit; the voltage-sharing circuit comprises an outer electrode common end and a plurality of outer electrode leads, wherein the input end of each outer electrode lead is connected to the outer electrode common end, and the output end of each outer electrode lead is connected to the outer edge of an outer electrode of the CTLM structure to be tested; the output ends of the outer electrode leads are uniformly distributed at the edge of the outer electrode; the voltage test circuit comprises two voltage probes, and the two voltage probes are respectively used for connecting an inner electrode and an outer electrode of the CTLM structure to be tested; the current test circuit comprises two current probes, and the two current probes are respectively used for connecting the inner electrode of the CTLM structure to be tested and the common end of the outer electrode. The invention realizes the equipotential of the contact points of the outer electrode and the output end of the outer electrode lead by using the voltage-sharing circuit, and the output points of the outer electrode are uniformly distributed on the outer edge of the outer electrode, so that the current can uniformly flow into the structure to be tested of the CTLM from all directions, the potential of the outer electrode in a circle close to the middle ring tends to be consistent, the uniformity of the potential distribution between the inner electrode and the outer electrode is greatly improved, and the accuracy of specific contact resistance measurement is improved.
On the basis of the first specific embodiment, the CTLM specific contact resistance measuring device is further improved to obtain a second specific embodiment, a schematic structural diagram of which is shown in fig. 5 and includes a voltage testing circuit, a current testing circuit and a voltage equalizing circuit;
the voltage-sharing circuit comprises an outer electrode common end and a plurality of outer electrode leads, wherein the input end of each outer electrode lead is connected to the outer electrode common end, and the output end of each outer electrode lead is connected to the outer edge of an outer electrode of the CTLM structure to be tested;
the output ends of the outer electrode leads are uniformly distributed at the edge of the outer electrode;
the voltage test circuit comprises two voltage probes, and the two voltage probes are respectively used for connecting an inner electrode and an outer electrode of the CTLM structure to be tested;
the current test circuit comprises two current probes, and the two current probes are respectively used for connecting an inner electrode of the CTLM structure to be tested and the common end of the outer electrode;
also comprises an inner electrode covering layer and an outer electrode covering layer;
the inner electrode covering layer and the outer electrode covering layer are conductive layers and are arranged in a non-contact manner;
the inner electrode covering layer is arranged on the surface of the inner electrode and is electrically connected with the inner electrode;
the outer electrode covering layer is arranged on the surface of the outer electrode and is electrically connected with the outer electrode.
The difference between this embodiment and the above embodiment is that the inner electrode covering layer and the outer electrode covering layer are added to the CTLM specific contact resistance measuring device in this embodiment, and the rest of the structure is the same as that in the above embodiment, and therefore, the detailed description thereof is omitted.
In this embodiment, the inner electrode coating layer and the outer electrode coating layer are added to the CTLM specific contact resistance measuring device, since the outer electrode and the inner electrode are very thin in thickness and the resistance is larger as the metal electrode is thinner, but we want to measure the specific contact resistance of metal-semiconductor, so the influence of the resistance of the inner electrode and the outer electrode should be eliminated as much as possible, this embodiment adds the electrode coating layer to the inner electrode of the outer electrode, which is equivalent to increasing the thickness of the outer electrode and the inner electrode, reducing the resistance of the electrode itself, reducing the error between the final measurement result and the actual specific contact resistance, and improving the measurement accuracy; furthermore, the inner electrode covering layer and the outer electrode covering layer are platinum metal layers or copper metal layers, and of course, other conductive materials can be selected according to actual conditions.
On the basis of the second specific embodiment, the CTLM specific contact resistance measuring device is further improved to obtain a third specific embodiment, a schematic structural diagram of which is shown in fig. 6 and includes a voltage testing circuit, a current testing circuit and a voltage equalizing circuit;
the voltage-sharing circuit comprises an outer electrode common end and a plurality of outer electrode leads, wherein the input end of each outer electrode lead is connected to the outer electrode common end, and the output end of each outer electrode lead is connected to the outer edge of an outer electrode of the CTLM structure to be tested;
the output ends of the outer electrode leads are uniformly distributed at the edge of the outer electrode;
the voltage test circuit comprises two voltage probes, and the two voltage probes are respectively used for connecting an inner electrode and an outer electrode of the CTLM structure to be tested;
the current test circuit comprises two current probes, and the two current probes are respectively used for connecting an inner electrode of the CTLM structure to be tested and the common end of the outer electrode;
also comprises an inner electrode covering layer and an outer electrode covering layer;
the inner electrode covering layer and the outer electrode covering layer are conductive layers and are arranged in a non-contact manner;
the inner electrode covering layer is arranged on the surface of the inner electrode and is electrically connected with the inner electrode;
the outer electrode covering layer is arranged on the surface of the outer electrode and is electrically connected with the outer electrode;
an insulating filling layer is further arranged between the outer electrode and the inner electrode.
The difference between this embodiment and the above embodiment is that the present embodiment adds the insulating filling layer to the CTLM specific contact resistance measuring device, and the rest of the structure is the same as that of the above embodiment, and therefore, the detailed description thereof is omitted.
In this embodiment, the insulating filling layer is added to further ensure the insulation between the inner electrode and the outer electrode, and simultaneously, the CTLM has stronger shock resistance than that of the contact resistance measuring device after being combined with the structure to be tested of the CTLM, and the inner electrode and the outer electrode are not dislocated due to external impact; furthermore, the insulating filling layer is a silicon dioxide layer, and of course, other materials may be selected to be used as the insulating filling layer according to actual situations.
The present invention also provides a specific contact resistance measuring apparatus including a CTLM specific contact resistance measuring device as described in any of the above. The invention provides a CTLM (China Mobile Teller machine) specific contact resistance measuring device, which comprises a voltage testing circuit, a current testing circuit and a voltage-sharing circuit, wherein the voltage testing circuit is connected with the voltage-sharing circuit; the voltage-sharing circuit comprises an outer electrode common end and a plurality of outer electrode leads, wherein the input end of each outer electrode lead is connected to the outer electrode common end, and the output end of each outer electrode lead is connected to the outer edge of an outer electrode of the CTLM structure to be tested; the output ends of the outer electrode leads are uniformly distributed at the edge of the outer electrode; the voltage test circuit comprises two voltage probes, and the two voltage probes are respectively used for connecting an inner electrode and an outer electrode of the CTLM structure to be tested; the current test circuit comprises two current probes, and the two current probes are respectively used for connecting the inner electrode of the CTLM structure to be tested and the common end of the outer electrode. The invention realizes the equipotential of the contact points of the outer electrode and the output end of the outer electrode lead by using the voltage-sharing circuit, and the output points of the outer electrode are uniformly distributed on the outer edge of the outer electrode, so that the current can uniformly flow into the structure to be tested of the CTLM from all directions, the potential of the outer electrode in a circle close to the middle ring tends to be consistent, the uniformity of the potential distribution between the inner electrode and the outer electrode is greatly improved, and the accuracy of specific contact resistance measurement is improved.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is to be noted that, in the present specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The above description describes in detail the CTLM specific contact resistance measuring device and the specific contact resistance measuring apparatus provided in the present invention. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (10)
1. A CTLM specific contact resistance measuring device is characterized by comprising a voltage testing circuit, a current testing circuit and a voltage-sharing circuit;
the voltage-sharing circuit comprises an outer electrode common end and a plurality of outer electrode leads, wherein the input end of each outer electrode lead is connected to the outer electrode common end, and the output end of each outer electrode lead is connected to the outer edge of an outer electrode of the CTLM structure to be tested;
the output ends of the outer electrode leads are uniformly distributed at the edge of the outer electrode;
the voltage test circuit comprises two voltage probes, and the two voltage probes are respectively used for connecting an inner electrode and an outer electrode of the CTLM structure to be tested;
the current test circuit comprises two current probes, and the two current probes are respectively used for connecting the inner electrode of the CTLM structure to be tested and the common end of the outer electrode.
2. The CTLM specific contact resistance measuring device of claim 1, further comprising an inner electrode coating layer and an outer electrode coating layer;
the inner electrode covering layer and the outer electrode covering layer are conductive layers and are arranged in a non-contact manner;
the inner electrode covering layer is arranged on the surface of the inner electrode and is electrically connected with the inner electrode;
the outer electrode covering layer is arranged on the surface of the outer electrode and is electrically connected with the outer electrode.
3. The CTLM specific contact resistance measuring device of claim 2, wherein the inner electrode coating layer and the outer electrode coating layer are platinum metal layers or copper metal layers.
4. The CTLM specific contact resistance measuring device of claim 1, further comprising an insulating filling layer between the outer electrode and the inner electrode.
5. The CTLM specific contact resistance measuring device according to claim 4, wherein the insulating filling layer is a silicon dioxide layer.
6. The CTLM specific contact resistance measuring device according to claim 1, further comprising an insulating isolation layer;
the insulation isolation layer is arranged on the surface of the semiconductor layer of the CTLM structure to be tested and outside the outer electrode;
the voltage-sharing circuit is a metal epitaxial layer arranged on the surface of the insulating isolation layer.
7. The CTLM specific contact resistance measuring device according to claim 6, wherein the insulating isolation layer and the voltage equalizing circuit are structural layers obtained by photolithography and a metal lift-off process.
8. The CTLM specific contact resistance measurement device of claim 6, wherein the insulating isolation layer is a silicon dioxide layer.
9. The CTLM specific contact resistance measuring device according to any one of claims 1 to 8, wherein when the external electrode is a square external electrode, the voltage equalizing circuit includes four external electrode leads;
the output ends of the four outer electrode lead wires are respectively connected to four vertex angles of the square outer electrode.
10. A specific contact resistance measuring apparatus, characterized in that it comprises a CTLM specific contact resistance measuring device according to any one of claims 1 to 9.
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| US20140055152A1 (en) * | 2012-08-24 | 2014-02-27 | GlobalFoundries, Inc. | Circular transmission line methods compatible with combinatorial processing of semiconductors |
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| Publication number | Priority date | Publication date | Assignee | Title |
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