CN113737157A - 可大幅度调节冷却能力的晶圆加热器 - Google Patents

可大幅度调节冷却能力的晶圆加热器 Download PDF

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CN113737157A
CN113737157A CN202110810658.9A CN202110810658A CN113737157A CN 113737157 A CN113737157 A CN 113737157A CN 202110810658 A CN202110810658 A CN 202110810658A CN 113737157 A CN113737157 A CN 113737157A
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游利
贾坤良
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Jingjiang Xianfeng Semiconductor Technology Co ltd
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Abstract

本发明公开了可大幅度调节冷却能力的晶圆加热器,包括上板,上板内孔顶面嵌设有铠装加热管,上板中部设置有测温热电偶;所述上板内孔里从上向下依次设置有盖板、冷却板和支撑轴;支撑轴上轴肩A卡设在上板下端,下轴肩B端面均匀设置有多个导向块;冷却板包括冷却管安装板和石墨匀热层上盖,冷却管安装板内设置有冷却管路,石墨匀热层上盖内设置有石墨匀热层,冷却板中部均布有多个调节螺栓;调节螺栓向下穿过支撑轴内孔和导向块卡槽,多个调节螺栓由固定块固定。本发明结构巧妙合理,方便调节冷却板与加热管距离,适用于多种工艺环境,能大幅度调节晶圆加热器的冷却能力,有效提升了生产效率,大幅降低了成本,提高了使用寿命。

Description

可大幅度调节冷却能力的晶圆加热器
技术领域
本发明涉及半导体芯片加工领域,尤其涉及可大幅度调节冷却能力的PECVD晶圆加热器。
背景技术
随着半导体芯片技术的飞速发展,半导体代工行业竞争激烈,半导体生产设备面临多样式制程的挑战,原有设备需要进行更先进的制程,晶圆厂需要更低成本的竞争优势,要使用现有设备满足多样化的客户制程需求,才能适应多样化竞争,在行业中保持领先。
(PECVD)晶圆加热器是半导体芯片加工的关键设备,起承载吸附晶圆及提供加热的作用,随着射频工艺功率增加,晶圆加热器在工艺过程中会不断吸收热量,引起晶圆加热器温度不断上升,加热器本身的冷却效率无法有效调节,导致加热器达到稳定温度的时间延长,导致半导体芯片(IC)生产效率下降,严重影响产品质量,
由于晶圆加热器温度无法保持稳定,造成工艺不稳定,报废难以预防,且昂贵的加热器也面临无法适应更高级的射频工艺,需要按不同的工艺进行复杂的加热器更换操作,加热器的通用性差,成本居高不下,因此非常迫切需要找出改善方法来控制晶圆加热器的温度,保证其不受功率不断提升的工艺的影响,及时抵消射频产生的热量,提升IC生产效率及降低成本。
基于上述原因,需要以等离子增强型化学气相淀积(PECVD)为研究对象,研究随着工艺要求的提高,如何通过设计优化,克服存在的问题。
发明内容
本发明的目是解决上述技术问题,提供可大幅度调节冷却能力的晶圆加热器。
为了实现上述技术目的,达到上述的技术要求,本发明所采用的技术方案是:一种可大幅度调节冷却能力的晶圆加热器,包括上板,其特征在于:所述上板内孔顶面嵌设有铠装加热管,上板中部设置有测温热电偶;所述上板内孔里从上向下依次设置有盖板、冷却板和支撑轴;所述支撑轴上轴肩A卡设在上板下端,下轴肩B端面均匀设置有多个导向块;所述冷却板包括冷却管安装板和石墨匀热层上盖,所述冷却管安装板内设置有冷却管路,冷却管安装板顶面向上依次设置有石墨匀热层下盖、石墨匀热层、石墨匀热层上盖;所述所述冷却管安装板底部均布有多个调节螺栓;所述调节螺栓向下穿过支撑轴内孔和导向块卡槽,所述多个调节螺栓由固定块固定。
优选的:所述上板顶面均布有多个小凸台和匀气沟槽,所述上板底面设置有内孔,内孔顶面设置有铠装加热管的安装沟槽,内孔口面设置有安装支撑轴的阶梯孔,所述上板内孔顶面向下延伸有多个立柱,所述立柱内设置有顶针孔,顶针孔向上板顶面延伸至小凸台顶面。
优选的:所述测温热电偶内部设置有两个测温头,测温热电偶顶面距离上板顶面2~3mm。
优选的:所述内孔的深度比冷却管安装板、石墨匀热层上盖和盖板的厚度之和大10~20mm。
优选的:所述调节螺栓与冷却板通过螺纹连接;所述导向块上设置有对调节螺栓径向限位的腰形卡槽。
优选的:所述调节螺栓与固定块和导向块设置为间隙配合。
优选的:所述上板和支撑轴通过激光焊接,所述上板和支撑轴外周设置有15~25微米的镀镍层。
优选的:所述冷却管安装板采用材料为:不锈钢, 所述石墨匀热层上盖采用材料为:铜,所述冷却管安装板与石墨匀热层上盖通过钎焊连接 。
优选的:所述上板1顶面除小凸台1-2顶面外进行喷砂处理至Ra3-5; 小凸台1-2顶面进行研磨,保证粗糙度Ra0.4以内。
本发明的有益效果:
1.冷却板内部设置有调节结构,方便调节冷却板与加热管距离,适用于多种工艺环境,调节范围大,能大幅度调节晶圆加热器的冷却能力,有效提升了生产效率,大幅降低了成本。
2.热电偶内部设有两个测温头,用于测温和监控温度变化, 更精准的控制晶圆温度 。
3.上板顶面设有匀气沟槽及小凸台,匀气沟槽防止晶圆在工艺时滑动,保证工艺稳定,小凸台保证晶圆与上板有一定的间隙,改善晶圆表面的温度均匀性;小凸台表面进行研磨,保证粗糙度Ra0.4以内,防止划伤晶圆;上板顶面除小凸台顶面外进行喷砂处理至Ra3-5,改善热辐射能力,提升晶圆的均匀性。
4.上板和支撑轴外周设置有15~25微米的镀镍层,保证良好的耐腐蚀和耐氧化能力,提高了使用寿命。
附图说明
图1为本发明结构示意图;
图2为图1的俯视图;
图3为本发明中上板主视图示意图;
图4为本发明中上板后视图示意图;
图5为图3中B-B剖视图;
图6为本发明中冷却板结构示意图;
图7为图6的俯视图;
图8为图6中I处放大图;
图9为本发明中支撑轴结构示意图;
图10为图9的俯视图示意图;
图11为图9的仰视图示意图;
在图中:1. 上板,1-1. 上板主体,1-2. 小凸台,1-3. 安装孔,1-4. 顶针孔,1-5.安装沟槽,1-6. 匀气沟槽,1-7.立柱,1-8.内孔,2. 冷却板,2-1. 冷却管路,2-2. 石墨匀热层,2-3.调节螺栓,2-4. 固定块,2-5、冷却管安装板,2-6、石墨匀热层上盖,2-7. 石墨匀热层下盖3. 支撑轴,3-1. 支撑轴主体,3-2. 密封圈安装槽,3-3. 密封圈锁紧螺纹孔,3-4. 导向块,4. 铠装加热管,5. 盖板,6. 测温热电偶 。
具体实施方式
下面结合附图对本发明作进一步说明。
图中:可大幅度调节冷却能力的晶圆加热器,包括上板1,其特征在于:所述上板1内孔顶面嵌设有铠装加热管4,上板1中部设置有测温热电偶6;所述上板1内孔里从上向下依次设置有盖板5、冷却板2和支撑轴3;所述支撑轴3上轴肩A卡设在上板1下端,下轴肩B端面均匀设置有多个导向块3-4;所述冷却板2包括冷却管安装板2-5和石墨匀热层上盖2-6,所述冷却管安装板2-5内设置有冷却管路2-1,冷却管安装板2-5顶面向上依次设置有石墨匀热层下盖2-7、石墨匀热层2-2、石墨匀热层上盖2-6;所述所述冷却管安装板2-5底部均布有多个调节螺栓2-3;所述调节螺栓2-3向下穿过支撑轴3内孔和导向块3-4卡槽,所述多个调节螺栓2-3由固定块2-4固定。
本优选实施例中,所述上板1顶面均布有多个小凸台1-2和匀气沟槽1-6,所述上板1底面设置有内孔1-8,内孔1-8顶面设置有铠装加热管4的安装沟槽1-5,内孔1-8口面设置有安装支撑轴3的阶梯孔,所述上板1内孔顶面向下延伸有多个立柱1-7,所述立柱1-7内设置有顶针孔1-4,顶针孔1-4向上板1顶面延伸至小凸台1-2顶面。
本优选实施例中,所述测温热电偶6内部设置有两个测温头,测温热电偶6顶面距离上板1顶面2~3mm。
本优选实施例中,所述内孔1-8的深度比冷却管安装板2-5、石墨匀热层上盖2-6和盖板5的厚度之和大10~20mm。
本优选实施例中,所述调节螺栓2-3与冷却板2通过螺纹连接;所述导向块3-4上设置有对调节螺栓2-3径向限位的腰形卡槽。
本优选实施例中,所述调节螺栓2-3与固定块2-4和导向块3-4设置为间隙配合。
本优选实施例中,所述上板1和支撑轴3通过激光焊接,所述上板1和支撑轴3外周设置有15~25微米的镀镍层。
本优选实施例中,所述冷却管安装板2-5采用材料为:不锈钢, 所述石墨匀热层上盖2-6采用材料为:铜,所述冷却管安装板2-5与石墨匀热层上盖2-6通过钎焊连接 。
本优选实施例中,所述上板1顶面除小凸台1-2顶面外进行喷砂处理至Ra3-5; 小凸台1-2顶面进行研磨,保证粗糙度Ra0.4以内。
具体实施时,将截面为近似正方形的铠装加热管4镶嵌到晶圆加热器上板主体1的铠装加热管安装沟槽1-5内,并使用真空钎焊将加热管盖板5和晶圆加热器上板主体1焊接起来起来,冷却管路2-1镶嵌在冷却管安装板2-5内,石墨匀热层2-2通过焊接组装在冷却管安装板2-5和石墨匀热层上盖2-6之间,石墨匀热层上盖2-6和石墨匀热层下盖2-7使用激光焊接连接,冷却板2上的组合调节螺栓2-3和支撑轴3连接,支撑轴3通过激光焊接与晶圆加热器上板主体1密封连接,并通过密封圈安装槽3-2使用密封圈来保证密封真空。
工作原理 ,芯片加工过程中,由射频产生的热量传递到晶圆加热器上板主体1上,晶圆加热器温度急速上升,此时通过调节螺栓2-3调节冷却板2与铠装加热管4的距离,通过测温热电偶6控制其和铠装加热管4之间的距离,在冷却板2的作用下,及时抵消射频工艺产生的大量热量,保证工艺时晶圆加热器的温度稳定,使用一款晶圆加热器就可以胜任多种工艺环境,无需更换不同型号的价格昂贵的晶圆加热器,且调节简单,有效提升了生产效率和保证成本的大幅降低。
本发明的上述实施例,仅仅是清楚地说明本发明所做的举例,但不用来限制本发明的保护范围,所有等同的技术方案也属于本发明的范畴,本发明的专利保护范围应由各项权利要求限定。

Claims (9)

1.可大幅度调节冷却能力的晶圆加热器,包括上板(1),其特征在于:所述上板(1)内孔顶面嵌设有铠装加热管(4),上板(1)中部设置有测温热电偶(6);所述上板(1)内孔里从上向下依次设置有盖板(5)、冷却板(2)和支撑轴(3);所述支撑轴(3)上轴肩A卡设在上板(1)下端,下轴肩B端面均匀设置有多个导向块(3-4);所述冷却板(2)包括冷却管安装板(2-5)和石墨匀热层上盖(2-6),所述冷却管安装板(2-5)内设置有冷却管路(2-1),冷却管安装板(2-5)顶面向上依次设置有石墨匀热层下盖(2-7)、石墨匀热层(2-2)、石墨匀热层上盖(2-6);所述所述冷却管安装板(2-5)底部均布有多个调节螺栓(2-3);所述调节螺栓(2-3)向下穿过支撑轴(3)内孔和导向块(3-4)卡槽,所述多个调节螺栓(2-3)由固定块(2-4)固定。
2.根据权利要求1所述的可大幅度调节冷却能力的晶圆加热器,其特征在于:所述上板(1)顶面均布有多个小凸台(1-2)和匀气沟槽(1-6),所述上板(1)底面设置有内孔(1-8),内孔(1-8)顶面设置有铠装加热管(4)的安装沟槽(1-5),内孔(1-8)口面设置有安装支撑轴(3)的阶梯孔,所述上板(1)内孔顶面向下延伸有多个立柱(1-7),所述立柱(1-7)内设置有顶针孔(1-4),顶针孔(1-4)向上板(1)顶面延伸至小凸台(1-2)顶面。
3.根据权利要求1所述的可大幅度调节冷却能力的晶圆加热器,其特征在于:所述测温热电偶(6)内部设置有两个测温头,测温热电偶(6)顶面距离上板(1)顶面2~3mm。
4.根据权利要求2所述的可大幅度调节冷却能力的晶圆加热器,其特征在于:所述内孔(1-8)的深度比冷却管安装板(2-5)、石墨匀热层上盖(2-6)和盖板(5)的厚度之和大10~20mm。
5.根据权利要求1所述的可大幅度调节冷却能力的晶圆加热器,其特征在于:所述调节螺栓(2-3)与冷却板(2)通过螺纹连接;所述导向块(3-4)上设置有对调节螺栓(2-3)径向限位的腰形卡槽。
6.根据权利要求1所述的可大幅度调节冷却能力的晶圆加热器,其特征在于:所述调节螺栓(2-3)与固定块(2-4)和导向块(3-4)设置为间隙配合。
7.根据权利要求1所述的可大幅度调节冷却能力的晶圆加热器,其特征在于:所述上板(1)和支撑轴(3)通过激光焊接,所述上板(1)和支撑轴(3)外周设置有15~25微米的镀镍层。
8.根据权利要求1所述的可大幅度调节冷却能力的晶圆加热器,其特征在于:所述冷却管安装板(2-5)采用材料为:不锈钢, 所述石墨匀热层上盖(2-6)采用材料为:铜,所述冷却管安装板(2-5)与石墨匀热层上盖(2-6)通过钎焊连接 。
9.根据权利要求2所述的可大幅度调节冷却能力的晶圆加热器,其特征在于:所述上板(1)顶面除小凸台(1-2)顶面外进行喷砂处理至Ra3-5; 小凸台(1-2)顶面进行研磨,保证粗糙度Ra0.4以内。
CN202110810658.9A 2021-07-19 2021-07-19 可大幅度调节冷却能力的晶圆加热器 Pending CN113737157A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116504675A (zh) * 2023-04-25 2023-07-28 亚赛(无锡)半导体科技有限公司 一种半导体生产设备用加热器
CN117286474A (zh) * 2022-12-28 2023-12-26 无锡至辰科技有限公司 一种高温金属外壳晶圆加热器及其加工方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117286474A (zh) * 2022-12-28 2023-12-26 无锡至辰科技有限公司 一种高温金属外壳晶圆加热器及其加工方法
CN116504675A (zh) * 2023-04-25 2023-07-28 亚赛(无锡)半导体科技有限公司 一种半导体生产设备用加热器

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