CN113737157A - 可大幅度调节冷却能力的晶圆加热器 - Google Patents

可大幅度调节冷却能力的晶圆加热器 Download PDF

Info

Publication number
CN113737157A
CN113737157A CN202110810658.9A CN202110810658A CN113737157A CN 113737157 A CN113737157 A CN 113737157A CN 202110810658 A CN202110810658 A CN 202110810658A CN 113737157 A CN113737157 A CN 113737157A
Authority
CN
China
Prior art keywords
plate
cooling
upper plate
top surface
wafer heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110810658.9A
Other languages
English (en)
Inventor
游利
贾坤良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jingjiang Xianfeng Semiconductor Technology Co ltd
Original Assignee
Jingjiang Xianfeng Semiconductor Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jingjiang Xianfeng Semiconductor Technology Co ltd filed Critical Jingjiang Xianfeng Semiconductor Technology Co ltd
Priority to CN202110810658.9A priority Critical patent/CN113737157A/zh
Publication of CN113737157A publication Critical patent/CN113737157A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本发明公开了可大幅度调节冷却能力的晶圆加热器,包括上板,上板内孔顶面嵌设有铠装加热管,上板中部设置有测温热电偶;所述上板内孔里从上向下依次设置有盖板、冷却板和支撑轴;支撑轴上轴肩A卡设在上板下端,下轴肩B端面均匀设置有多个导向块;冷却板包括冷却管安装板和石墨匀热层上盖,冷却管安装板内设置有冷却管路,石墨匀热层上盖内设置有石墨匀热层,冷却板中部均布有多个调节螺栓;调节螺栓向下穿过支撑轴内孔和导向块卡槽,多个调节螺栓由固定块固定。本发明结构巧妙合理,方便调节冷却板与加热管距离,适用于多种工艺环境,能大幅度调节晶圆加热器的冷却能力,有效提升了生产效率,大幅降低了成本,提高了使用寿命。

Description

可大幅度调节冷却能力的晶圆加热器
技术领域
本发明涉及半导体芯片加工领域,尤其涉及可大幅度调节冷却能力的PECVD晶圆加热器。
背景技术
随着半导体芯片技术的飞速发展,半导体代工行业竞争激烈,半导体生产设备面临多样式制程的挑战,原有设备需要进行更先进的制程,晶圆厂需要更低成本的竞争优势,要使用现有设备满足多样化的客户制程需求,才能适应多样化竞争,在行业中保持领先。
(PECVD)晶圆加热器是半导体芯片加工的关键设备,起承载吸附晶圆及提供加热的作用,随着射频工艺功率增加,晶圆加热器在工艺过程中会不断吸收热量,引起晶圆加热器温度不断上升,加热器本身的冷却效率无法有效调节,导致加热器达到稳定温度的时间延长,导致半导体芯片(IC)生产效率下降,严重影响产品质量,
由于晶圆加热器温度无法保持稳定,造成工艺不稳定,报废难以预防,且昂贵的加热器也面临无法适应更高级的射频工艺,需要按不同的工艺进行复杂的加热器更换操作,加热器的通用性差,成本居高不下,因此非常迫切需要找出改善方法来控制晶圆加热器的温度,保证其不受功率不断提升的工艺的影响,及时抵消射频产生的热量,提升IC生产效率及降低成本。
基于上述原因,需要以等离子增强型化学气相淀积(PECVD)为研究对象,研究随着工艺要求的提高,如何通过设计优化,克服存在的问题。
发明内容
本发明的目是解决上述技术问题,提供可大幅度调节冷却能力的晶圆加热器。
为了实现上述技术目的,达到上述的技术要求,本发明所采用的技术方案是:一种可大幅度调节冷却能力的晶圆加热器,包括上板,其特征在于:所述上板内孔顶面嵌设有铠装加热管,上板中部设置有测温热电偶;所述上板内孔里从上向下依次设置有盖板、冷却板和支撑轴;所述支撑轴上轴肩A卡设在上板下端,下轴肩B端面均匀设置有多个导向块;所述冷却板包括冷却管安装板和石墨匀热层上盖,所述冷却管安装板内设置有冷却管路,冷却管安装板顶面向上依次设置有石墨匀热层下盖、石墨匀热层、石墨匀热层上盖;所述所述冷却管安装板底部均布有多个调节螺栓;所述调节螺栓向下穿过支撑轴内孔和导向块卡槽,所述多个调节螺栓由固定块固定。
优选的:所述上板顶面均布有多个小凸台和匀气沟槽,所述上板底面设置有内孔,内孔顶面设置有铠装加热管的安装沟槽,内孔口面设置有安装支撑轴的阶梯孔,所述上板内孔顶面向下延伸有多个立柱,所述立柱内设置有顶针孔,顶针孔向上板顶面延伸至小凸台顶面。
优选的:所述测温热电偶内部设置有两个测温头,测温热电偶顶面距离上板顶面2~3mm。
优选的:所述内孔的深度比冷却管安装板、石墨匀热层上盖和盖板的厚度之和大10~20mm。
优选的:所述调节螺栓与冷却板通过螺纹连接;所述导向块上设置有对调节螺栓径向限位的腰形卡槽。
优选的:所述调节螺栓与固定块和导向块设置为间隙配合。
优选的:所述上板和支撑轴通过激光焊接,所述上板和支撑轴外周设置有15~25微米的镀镍层。
优选的:所述冷却管安装板采用材料为:不锈钢, 所述石墨匀热层上盖采用材料为:铜,所述冷却管安装板与石墨匀热层上盖通过钎焊连接 。
优选的:所述上板1顶面除小凸台1-2顶面外进行喷砂处理至Ra3-5; 小凸台1-2顶面进行研磨,保证粗糙度Ra0.4以内。
本发明的有益效果:
1.冷却板内部设置有调节结构,方便调节冷却板与加热管距离,适用于多种工艺环境,调节范围大,能大幅度调节晶圆加热器的冷却能力,有效提升了生产效率,大幅降低了成本。
2.热电偶内部设有两个测温头,用于测温和监控温度变化, 更精准的控制晶圆温度 。
3.上板顶面设有匀气沟槽及小凸台,匀气沟槽防止晶圆在工艺时滑动,保证工艺稳定,小凸台保证晶圆与上板有一定的间隙,改善晶圆表面的温度均匀性;小凸台表面进行研磨,保证粗糙度Ra0.4以内,防止划伤晶圆;上板顶面除小凸台顶面外进行喷砂处理至Ra3-5,改善热辐射能力,提升晶圆的均匀性。
4.上板和支撑轴外周设置有15~25微米的镀镍层,保证良好的耐腐蚀和耐氧化能力,提高了使用寿命。
附图说明
图1为本发明结构示意图;
图2为图1的俯视图;
图3为本发明中上板主视图示意图;
图4为本发明中上板后视图示意图;
图5为图3中B-B剖视图;
图6为本发明中冷却板结构示意图;
图7为图6的俯视图;
图8为图6中I处放大图;
图9为本发明中支撑轴结构示意图;
图10为图9的俯视图示意图;
图11为图9的仰视图示意图;
在图中:1. 上板,1-1. 上板主体,1-2. 小凸台,1-3. 安装孔,1-4. 顶针孔,1-5.安装沟槽,1-6. 匀气沟槽,1-7.立柱,1-8.内孔,2. 冷却板,2-1. 冷却管路,2-2. 石墨匀热层,2-3.调节螺栓,2-4. 固定块,2-5、冷却管安装板,2-6、石墨匀热层上盖,2-7. 石墨匀热层下盖3. 支撑轴,3-1. 支撑轴主体,3-2. 密封圈安装槽,3-3. 密封圈锁紧螺纹孔,3-4. 导向块,4. 铠装加热管,5. 盖板,6. 测温热电偶 。
具体实施方式
下面结合附图对本发明作进一步说明。
图中:可大幅度调节冷却能力的晶圆加热器,包括上板1,其特征在于:所述上板1内孔顶面嵌设有铠装加热管4,上板1中部设置有测温热电偶6;所述上板1内孔里从上向下依次设置有盖板5、冷却板2和支撑轴3;所述支撑轴3上轴肩A卡设在上板1下端,下轴肩B端面均匀设置有多个导向块3-4;所述冷却板2包括冷却管安装板2-5和石墨匀热层上盖2-6,所述冷却管安装板2-5内设置有冷却管路2-1,冷却管安装板2-5顶面向上依次设置有石墨匀热层下盖2-7、石墨匀热层2-2、石墨匀热层上盖2-6;所述所述冷却管安装板2-5底部均布有多个调节螺栓2-3;所述调节螺栓2-3向下穿过支撑轴3内孔和导向块3-4卡槽,所述多个调节螺栓2-3由固定块2-4固定。
本优选实施例中,所述上板1顶面均布有多个小凸台1-2和匀气沟槽1-6,所述上板1底面设置有内孔1-8,内孔1-8顶面设置有铠装加热管4的安装沟槽1-5,内孔1-8口面设置有安装支撑轴3的阶梯孔,所述上板1内孔顶面向下延伸有多个立柱1-7,所述立柱1-7内设置有顶针孔1-4,顶针孔1-4向上板1顶面延伸至小凸台1-2顶面。
本优选实施例中,所述测温热电偶6内部设置有两个测温头,测温热电偶6顶面距离上板1顶面2~3mm。
本优选实施例中,所述内孔1-8的深度比冷却管安装板2-5、石墨匀热层上盖2-6和盖板5的厚度之和大10~20mm。
本优选实施例中,所述调节螺栓2-3与冷却板2通过螺纹连接;所述导向块3-4上设置有对调节螺栓2-3径向限位的腰形卡槽。
本优选实施例中,所述调节螺栓2-3与固定块2-4和导向块3-4设置为间隙配合。
本优选实施例中,所述上板1和支撑轴3通过激光焊接,所述上板1和支撑轴3外周设置有15~25微米的镀镍层。
本优选实施例中,所述冷却管安装板2-5采用材料为:不锈钢, 所述石墨匀热层上盖2-6采用材料为:铜,所述冷却管安装板2-5与石墨匀热层上盖2-6通过钎焊连接 。
本优选实施例中,所述上板1顶面除小凸台1-2顶面外进行喷砂处理至Ra3-5; 小凸台1-2顶面进行研磨,保证粗糙度Ra0.4以内。
具体实施时,将截面为近似正方形的铠装加热管4镶嵌到晶圆加热器上板主体1的铠装加热管安装沟槽1-5内,并使用真空钎焊将加热管盖板5和晶圆加热器上板主体1焊接起来起来,冷却管路2-1镶嵌在冷却管安装板2-5内,石墨匀热层2-2通过焊接组装在冷却管安装板2-5和石墨匀热层上盖2-6之间,石墨匀热层上盖2-6和石墨匀热层下盖2-7使用激光焊接连接,冷却板2上的组合调节螺栓2-3和支撑轴3连接,支撑轴3通过激光焊接与晶圆加热器上板主体1密封连接,并通过密封圈安装槽3-2使用密封圈来保证密封真空。
工作原理 ,芯片加工过程中,由射频产生的热量传递到晶圆加热器上板主体1上,晶圆加热器温度急速上升,此时通过调节螺栓2-3调节冷却板2与铠装加热管4的距离,通过测温热电偶6控制其和铠装加热管4之间的距离,在冷却板2的作用下,及时抵消射频工艺产生的大量热量,保证工艺时晶圆加热器的温度稳定,使用一款晶圆加热器就可以胜任多种工艺环境,无需更换不同型号的价格昂贵的晶圆加热器,且调节简单,有效提升了生产效率和保证成本的大幅降低。
本发明的上述实施例,仅仅是清楚地说明本发明所做的举例,但不用来限制本发明的保护范围,所有等同的技术方案也属于本发明的范畴,本发明的专利保护范围应由各项权利要求限定。

Claims (9)

1.可大幅度调节冷却能力的晶圆加热器,包括上板(1),其特征在于:所述上板(1)内孔顶面嵌设有铠装加热管(4),上板(1)中部设置有测温热电偶(6);所述上板(1)内孔里从上向下依次设置有盖板(5)、冷却板(2)和支撑轴(3);所述支撑轴(3)上轴肩A卡设在上板(1)下端,下轴肩B端面均匀设置有多个导向块(3-4);所述冷却板(2)包括冷却管安装板(2-5)和石墨匀热层上盖(2-6),所述冷却管安装板(2-5)内设置有冷却管路(2-1),冷却管安装板(2-5)顶面向上依次设置有石墨匀热层下盖(2-7)、石墨匀热层(2-2)、石墨匀热层上盖(2-6);所述所述冷却管安装板(2-5)底部均布有多个调节螺栓(2-3);所述调节螺栓(2-3)向下穿过支撑轴(3)内孔和导向块(3-4)卡槽,所述多个调节螺栓(2-3)由固定块(2-4)固定。
2.根据权利要求1所述的可大幅度调节冷却能力的晶圆加热器,其特征在于:所述上板(1)顶面均布有多个小凸台(1-2)和匀气沟槽(1-6),所述上板(1)底面设置有内孔(1-8),内孔(1-8)顶面设置有铠装加热管(4)的安装沟槽(1-5),内孔(1-8)口面设置有安装支撑轴(3)的阶梯孔,所述上板(1)内孔顶面向下延伸有多个立柱(1-7),所述立柱(1-7)内设置有顶针孔(1-4),顶针孔(1-4)向上板(1)顶面延伸至小凸台(1-2)顶面。
3.根据权利要求1所述的可大幅度调节冷却能力的晶圆加热器,其特征在于:所述测温热电偶(6)内部设置有两个测温头,测温热电偶(6)顶面距离上板(1)顶面2~3mm。
4.根据权利要求2所述的可大幅度调节冷却能力的晶圆加热器,其特征在于:所述内孔(1-8)的深度比冷却管安装板(2-5)、石墨匀热层上盖(2-6)和盖板(5)的厚度之和大10~20mm。
5.根据权利要求1所述的可大幅度调节冷却能力的晶圆加热器,其特征在于:所述调节螺栓(2-3)与冷却板(2)通过螺纹连接;所述导向块(3-4)上设置有对调节螺栓(2-3)径向限位的腰形卡槽。
6.根据权利要求1所述的可大幅度调节冷却能力的晶圆加热器,其特征在于:所述调节螺栓(2-3)与固定块(2-4)和导向块(3-4)设置为间隙配合。
7.根据权利要求1所述的可大幅度调节冷却能力的晶圆加热器,其特征在于:所述上板(1)和支撑轴(3)通过激光焊接,所述上板(1)和支撑轴(3)外周设置有15~25微米的镀镍层。
8.根据权利要求1所述的可大幅度调节冷却能力的晶圆加热器,其特征在于:所述冷却管安装板(2-5)采用材料为:不锈钢, 所述石墨匀热层上盖(2-6)采用材料为:铜,所述冷却管安装板(2-5)与石墨匀热层上盖(2-6)通过钎焊连接 。
9.根据权利要求2所述的可大幅度调节冷却能力的晶圆加热器,其特征在于:所述上板(1)顶面除小凸台(1-2)顶面外进行喷砂处理至Ra3-5; 小凸台(1-2)顶面进行研磨,保证粗糙度Ra0.4以内。
CN202110810658.9A 2021-07-19 2021-07-19 可大幅度调节冷却能力的晶圆加热器 Pending CN113737157A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110810658.9A CN113737157A (zh) 2021-07-19 2021-07-19 可大幅度调节冷却能力的晶圆加热器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110810658.9A CN113737157A (zh) 2021-07-19 2021-07-19 可大幅度调节冷却能力的晶圆加热器

Publications (1)

Publication Number Publication Date
CN113737157A true CN113737157A (zh) 2021-12-03

Family

ID=78728737

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110810658.9A Pending CN113737157A (zh) 2021-07-19 2021-07-19 可大幅度调节冷却能力的晶圆加热器

Country Status (1)

Country Link
CN (1) CN113737157A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116504675A (zh) * 2023-04-25 2023-07-28 亚赛(无锡)半导体科技有限公司 一种半导体生产设备用加热器
CN117286474A (zh) * 2022-12-28 2023-12-26 无锡至辰科技有限公司 一种高温金属外壳晶圆加热器及其加工方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117286474A (zh) * 2022-12-28 2023-12-26 无锡至辰科技有限公司 一种高温金属外壳晶圆加热器及其加工方法
CN116504675A (zh) * 2023-04-25 2023-07-28 亚赛(无锡)半导体科技有限公司 一种半导体生产设备用加热器

Similar Documents

Publication Publication Date Title
CN113737157A (zh) 可大幅度调节冷却能力的晶圆加热器
CN103878524A (zh) 一种超薄金属双极板多段夹持自适应激光焊接夹具
CN104226689B (zh) 轧辊冷却装置及冷却方法
CN104244557A (zh) 一种气氛保护同轴送粉等离子枪
CN101204755B (zh) 金属构件表面微观形貌可控制造工艺实现方法
CN215713366U (zh) 一种可大幅度调节冷却能力的晶圆加热器
CN111637967A (zh) 一种通用固体吸收型高能激光能量测量探头
CN103469166B (zh) 一种集成式阴极电弧靶
CN111312620A (zh) 一种降低晶圆离子污染的高均匀性晶圆加热器
Wang et al. Investigation on pulse-vibration electrochemical machining of parallel micro-grooves
CN103343186A (zh) 可控等离子弧金属表面热处理工艺
CN202317995U (zh) 一种磨削加工零件温度控制装置
CN109518122B (zh) 薄壁大尺寸非对称回转类钛合金零件离子氮化控制方法
CN104209646A (zh) 固定式凸焊机及多段凸焊方法
CN109365976A (zh) 一种电阻焊焊接电极的制作方法及模具
CN214458330U (zh) 同轴送粉的激光熔覆头用集尘装置
CN213067121U (zh) 一种冶金炉辊用双回路水冷却结构
CN213764394U (zh) 一种铝合金型材与薄板弧焊用冷却散热支撑装置
CN113463043A (zh) 一种旋转靶材的制备方法
CN212223060U (zh) 光伏压延辊热处理定心装置
CN2835267Y (zh) 一种导电辊
CN218711023U (zh) 一种用于单晶热场对中的炉底固毡
CN101264536A (zh) 金属结合剂砂轮电火花精密整形装置
CN201873740U (zh) 齿轮局部离子氮化工装
CN117448529B (zh) 凿岩设备活塞冲击端抛物线型硬化层感应加热淬火工艺

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Address after: 214500 No. 195, Xingang Avenue, Jingjiang Economic Development Zone, Taizhou City, Jiangsu Province

Applicant after: Jiangsu Xianfeng Precision Technology Co.,Ltd.

Address before: 214500 No.8 Deyu Road, Chengnan Park, Jingjiang City, Taizhou City, Jiangsu Province

Applicant before: JINGJIANG XIANFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD.

CB02 Change of applicant information