CN113736195B - 一种耐高温铁电聚合物基介电储能复合薄膜及其制备方法和应用 - Google Patents
一种耐高温铁电聚合物基介电储能复合薄膜及其制备方法和应用 Download PDFInfo
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Abstract
本发明提出了一种耐高温铁电聚合物基介电储能复合薄膜及其制备方法和应用,针对SiC晶须的易渗流效应,本发明通过水解水热法制备了SiC@BaTiO3核壳复合填料,将SiC纳米颗粒完整包覆,抑制了渗流通路的形成;SiC的高热导率(114W/m.K)增强了复合膜的热传导特性,提高了复合膜的热稳定性;高介电常数BaTiO3外壳以及核壳粒子的界面极化效应增强了复合薄膜的介电常数;同时,绝缘特性的核壳填料,以及核壳填料的表面改性促进了填料与基材有机无机界面的兼容性,保持了较低的介电损耗;最终促使复合薄膜在120℃测试条件下均有较高的储能密度和击穿强度,提高了铁电聚合物工作温度范围。
Description
技术领域
本发明涉及陶瓷与铁电聚合物复合材料制备技术领域,尤其涉及一种耐高温铁电聚合物基介电储能复合薄膜及其制备方法和应用。
背景技术
静电电容器是一种储能器件,是电子电力系统中重要的组成元件,在混合动力汽车、新能源技术、柔直输电和井下油气勘探等新兴领域具有广泛的应用前景。制备高储能密度静电电容器的关键是要实现电介质层的高极化率(高介电常数)和高击穿场强。以铁电聚合物聚偏氟乙烯(PVDF)系列为基体,填充高介电陶瓷纳米填料的复合薄膜材料结合了聚合物高击穿场强和陶瓷高介电常数的优点,是理想的储能介质,成为材料、电气领域研究的热点。
然而,由于PVDF系列聚合物较低的热变形温度,使得此类复合材料随着工作温度的增加,热击穿场强和由于材料软化导致的机电击穿场强急剧下降,储能密度和效率迅速降低,内部温升进一步增加;同时由于聚合物极低的热导率,热量难以耗散,进一步加剧了热量累积和器件失效,严重限制了其在80℃以上工作环境的应用。
提高PVDF系列聚合物复合材料的热导率是提高其热击穿场强的重要措施。然而,在聚合物基的复合材料中同时获得高热导率和高介电常数,并维持低介电损耗仍然是一个很大的挑战。一方面,高介电常数的铁电金属氧化物陶瓷填料由于其本身较低的热导率和界面的声子散射,使得这一类复合材料的热导率很难提高;另一方面,将绝缘的导热纳米颗粒(如氮化硼、氧化铝纳米管或纳米片)作为填充剂制备的复合材料虽然获得了很高的热导率,但由于这一类填充剂的低极化率而限制了复合体系的介电常数。将接近渗流阈值的高导热导体粒子或纤维(如石墨烯、碳纳米管、Ag、Al等)分散到聚合物中可以大幅地提高材料的介电常数和导热系数,但是由于导体粒子的团聚和渗流效应,材料的电导率过高,致使击穿场强迅速下降,严重限制了其在高电压下的应用。
具体的,发明人检索了相关公开的文献信息,如下:
1.复合材料学报,2021,38(4):1087-1097.
以15wt%十六烷基三甲基溴化铵改性碳化硅晶须(CTAB-SiCw)和10wt%KH550改性纳米BaTiO3(BT)为填料,聚偏氟乙烯(PVDF)为成膜物质,通过溶液流延法制备了BT-SiCw/PVDF三元复合薄膜。即频率f=500Hz、介电常数εrmax=33、介电损耗tanδmax=0.154。随着温度的升高,该试样的介电常数和介电损耗也逐渐增加,并在120℃达到最大值(f=500Hz、εrmax=110、tanδmax=1.3)。
2.Composites Science and Technology 162(2018)180–187
本文报道了一种由介质碳包覆钛酸钡杂化粒子(BT@C)、导热碳化硅纳米颗粒(SiCNPs)和柔性P(VDF-HFP)组成的新型三组分复合材料。对于介电性能,BT@C-2(50wt%)+7.8wt%SiC NPs/PVDF-HFP的介电常数在1kHz时为1394,介电损耗tanδ为0.9。
3.Composites:Part A 74(2015)88–95
本文报道了一种SiC晶须、BaTiO3纳米颗粒与PVDF的三元复合薄膜。20vol%SiC晶须+15vol BaTiO3颗粒的复合薄膜100Hz下的介电常数为213.8,介电损耗为0.27。
4.ACS Appl.Mater.Interfaces 2011,3,4396–4403
本文报道了一种由PVDF、钛酸钡(BT)纳米粒子和β碳化硅(βSiC)晶须组成的三相复合材料。当β-SiC晶须加载量为20.0vol%时,PVDF/β-SiC和PVDF/(40vol%)BT/β-SiC的损耗正切分别为1.46和0.34。
5.CN 107573645 A一种内置式高介电常数柔性树脂复合材料及其制备方法和应用,2017
该专利公开了一种内置式高介电常数柔性树脂复合材料及其制备方法和应用,该树脂复合材料由包括树脂基体与无机填料通过一定的工艺复合而成。本发明通过在树脂基体中引入纳米一维、二维以及纳米颗粒填料,通过各种填料之间的协同效应,进一步增加了介电填料之间的有效接触以及在电场作用下的耦合效应,从而获得高介电常数的柔性介电材料。实施例中引入0维纳米颗粒、1维纳米纤维或纳米线、2维纳米片与聚合物直接混合,获得高介电常数和低介电损耗的复合材料。
由此可见,SiC/BaTiO3/PVDF材料体系在介电材料领域具有很好的应用前景。然而以上文献均是两相或三相直接与铁电聚合物混合,并且由于晶须的渗流效应,尤其是SiC晶须的渗流效应,极易形成导电通路,使得上述体系尽管介电常数有较大提高,但介电损耗也较大(文献1-4),不适用于储能介质,更不适用于高温储能介质,因而上述文献也未提及该材料在介电储能领域的应用。文献5报道的复合材料具有较高的介电常数和较低的介电损耗,其耐压强度(击穿场强)最优值为1150kV/cm,但未与纯聚合物进行比较。而一般来说,随着填料组分的增加,击穿也会迅速恶化,因此与纯聚合物比较较为重要。此外,文献5未测试储能密度和储能效率,未提及其高温应用。
发明内容
有鉴于此,本发明提出了一种耐高温铁电聚合物基介电储能复合薄膜及其制备方法和应用,通过采用高导热纳米核-高介电外壳的复合纳米填料,同时提高铁电聚合物的热导率和介电常数,并抑制介电损耗,最终获得了在120℃工作温度下仍具有较高储能密度和充放电效率的纳米复合材料。
本发明的技术方案是这样实现的:
一方面,本发明提供了一种耐高温铁电聚合物基介电储能复合薄膜,其包括基材和分散在基材中的核壳纳米填料,
所述基材为聚偏氟乙烯或其共聚物系列铁电聚合物;
所述核壳纳米填料为SiC纳米核及包覆在SiC纳米核上的BaTiO3纳米壳;
核壳纳米填料的质量百分比为2.5%~50%。
在以上技术方案的基础上,优选的,所述铁电聚合物采用PVDF(聚偏氟乙烯)、P(VDF-HFP)(聚偏氟乙烯-六氟丙烯)、P(VDF-TrFE)(聚偏氟乙烯-三氟乙烯)或P(VDF-TrFE-HFP)(聚偏氟乙烯-三氟乙烯-六氟乙烯)。
在以上技术方案的基础上,优选的,所述核壳纳米填料的粒径为80~120nm,其中,SiC纳米核及BaTiO3纳米壳的用量体积比例为1:(1~3)。更优选的,所述SiC纳米核及BaTiO3纳米壳的用量体积比例为1:1。
在以上技术方案的基础上,优选的,所述SiC纳米核使用十六烷基三甲基溴化铵进行表面改性。
在以上技术方案的基础上,优选的,所述核壳纳米填料表面采用乙酸进行羟基化改性。
第二方面,本发明提供了本发明第一方面所述的耐高温铁电聚合物基介电储能复合薄膜的制备方法,包括以下步骤:
制备得到SiC@BaTiO3核壳纳米粒子;
将SiC@BaTiO3核壳纳米粒子分散到溶剂中,得到悬浊液,再加入铁电聚合物,进行分散,得到悬浊液,通过流延法制备复合膜,80~100℃干燥,即可得到纳米复合材料薄膜。
具体的,称量所需量的核壳粉末分散到8~12ml的二甲基甲酰胺中,超声分散至少4h至形成均匀的悬浊液。然后将计算量的铁电聚合物粉体加入到悬浊液中,使用超声分散和机械震荡数小时直至形成均匀的悬浊液。通过流延法制备不同质量分数的复合膜。80~100℃干燥,即可得到纳米复合材料薄膜。
具体的,加入铁电聚合物后应至少超声3h。
在以上技术方案的基础上,优选的,制备得到SiC@BaTiO3核壳纳米粒子的过程包括,
将SiC@TiO2核壳粒子与八水合氢氧化钡、去离子水溶液一同加入水热釜中,加热处理,SiC@TiO2核壳粒子与氢氧化钡经水热反应生成SiC@BaTiO3;
使用乙酸清洗水热反应后的核壳粒子以除去碳酸钡,并对核壳粒子进行表面羟基化改性,然后用去离子水清洗后干燥,即可得纯相SiC@BaTiO3核壳纳米粒子。
具体的,将所得SiC@TiO2核壳粒子与八水合氢氧化钡、去离子水溶液一同加入水热釜中,200℃加热处理3~5h。SiC@TiO2核壳粒子与氢氧化钡经水热反应生成SiC@BaTiO3。使用乙酸清洗水热反应后的核壳粒子以除去碳酸钡,并对核壳粒子进行表面羟基化改性,然后用去离子水清洗3~5遍后干燥即可得纯相SiC@BaTiO3核壳纳米粒子。具体的,氢氧化钡水溶液为氢氧化钡与去离子水的混合溶液,配比根据钛酸四丁酯含量计算,Ba:Ti摩尔比为1.1~1.5。
更进一步优选的,制备SiC@TiO2核壳粒子的过程包括,
将碳化硅分散于正丁醇、去离子水、十六烷基三甲基溴化铵的混合溶液中,超声分散至形成均匀悬浊液A液;
将钛酸四丁酯分散到正丁醇中,超声分散,形成二氧化钛前驱液B液;
在搅拌的情况下,将B液缓慢滴入A液中,以使得钛酸四丁酯完全水解,水解后的自发沉淀即为复合粉体SiC@TiO2,用去离子水清洗3~4遍,90~100℃干燥,得到SiC@TiO2核壳粒子。
具体的,将0.02~0.2g碳化硅分散于150~250ml正丁醇、8~12ml去离子水、0.4~0.6g十六烷基三甲基溴化铵的混合溶液中,超声分散20~40min至形成均匀悬浊液A液。然后将计算量的钛酸四丁酯分散到30~70ml正丁醇中,超声分散20~40min,形成二氧化钛前驱液B液;计算量的钛酸四丁酯为根据称量的碳化硅量按SiC:BaTiO3体积比为1:1时计算所得。
在磁力或机械搅拌的情况下,将B液缓慢滴入A液中,持续时间10~14h,以使得钛酸四丁酯完全水解。水解后的自发沉淀即为复合粉体SiC@TiO2,用去离子水清洗3~4遍,90~100℃干燥,得到SiC@TiO2核壳粒子。滴加二氧化钛前驱液B液的速度为10秒一滴。
在以上技术方案的基础上,优选的,将所得的纳米复合材料薄膜在200℃~220℃烘箱中加热6~10min,然后冰水淬火,最后烘干即可得铁电聚合物基介电储能复合薄膜。
第三方面,本发明第一方面所述的耐高温铁电聚合物基介电储能复合薄膜在静电电容器中的应用。
本发明的耐高温铁电聚合物基介电储能复合薄膜及其制备方法和应用相对于现有技术具有以下有益效果:
(1)针对SiC晶须的易渗流效应,本发明通过水解水热法制备了SiC@BaTiO3核壳复合填料,将SiC纳米颗粒完整包覆,抑制了渗流通路的形成;SiC的高热导率(114W/m.K)增强了复合膜的热传导特性,提高了复合膜的热稳定性;高介电常数BaTiO3外壳以及核壳粒子的界面极化效应增强了复合薄膜的介电常数;同时,绝缘特性的核壳填料,以及核壳填料的表面改性促进了填料与基材有机无机界面的兼容性,保持了较低的介电损耗;最终促使复合薄膜在120℃测试条件下均有较高的储能密度和击穿强度,提高了铁电聚合物工作温度范围;
(2)通过对SiC纳米核使用十六烷基三甲基溴化铵进行表面改性,可以提高SiC纳米核在中性溶剂中的等电点,使SiC纳米核表面带有大量正电荷,促进带负电的无定型Ti(OH)4在SiC纳米核表面自组装沉积,提高包覆的完整率;
(3)其次,用低成本易操作的乙酸清洗步骤对核壳颗粒表面进行羟基化改性,实现与铁电聚合物的高质量共混流延成膜,抑制了薄膜由于有机、无机界面不兼容所产生的缺陷;
(4)本发明得到的SiC@BaTiO3核壳复合填料有效提升了铁电聚合物基介电储能薄膜的介电性能和高温稳定性。制备得到的介电复合薄膜在室温下有增强的介电常数和与纯聚合物持平的介电损耗,在高温下有显著增强的击穿场强、储能密度和储能效率。120℃测试条件下,纯P(VDF-HFP)的平均击穿场强为827.1kV/cm,含7.5wt.%核壳填料复合薄膜平均击穿场强为1524.6kV/cm。纯P(VDF-HFP)的最大放电储能密度为0.36J/cm3,储能效率为34.73%;含7.5wt.%核壳填料复合薄膜最大放电储能密度达到2.05J/cm3,储能效率为65.45%。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明实施例1得到的SiC@BaTiO3核壳粉体的X射线衍射图。
图2为本发明实施例1得到的SiC@BaTiO3核壳粉体的透射电镜图。
图3为本发明实施例1得到的铁电聚合物基复合材料与纯聚合物在不同频率下的介电常数及介电损耗图。
图4为本发明实施例1得到的铁电聚合物基复合材料与纯聚合物在120℃下不同电场下的单极电滞回线图。
图5为本发明实施例1得到的铁电聚合物基复合材料与纯聚合物在120℃下击穿场强图。
图6为本发明实施例1得到的铁电聚合物基复合材料与纯聚合物的热机械性能图。
图7为本发明实施例5得到的直接混合陶瓷铁电聚合物复合材料与纯聚合物和核壳结构复合材料在25℃下击穿场强图。
具体实施方式
下面将结合本发明实施方式,对本发明实施方式中的技术方案进行清楚、完整地描述,显然,所描述的实施方式仅仅是本发明一部分实施方式,而不是全部的实施方式。基于本发明中的实施方式,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式,都属于本发明保护的范围。
实施例1
本实施例的耐高温铁电聚合物基介电储能复合薄膜及其制备方法,包括以下步骤:
步骤1,称取1.6g碳化硅溶于200ml正丁醇、10ml去离子水、0.5g十六烷基三甲基溴化铵的混合溶剂中,超声分散30min至形成均匀悬浊液A液。然后将4.39ml钛酸四丁酯溶于50ml正丁醇中,磁力搅拌30min,形成二氧化钛前驱液B液。
步骤2,在磁力搅拌的情况下,将B液缓慢滴入A液中,持续时间12h,以使得钛酸四丁酯完全水解。自发沉淀可得复合粉体,用去离子水清洗3遍,90℃干燥。
步骤3,将所得核壳粒子与氢氧化钡水溶液(5.29g八水氢氧化钡和120ml去离子水的混合溶液)一同加入水热釜中,200℃加热处理4h。外壳的TiO2转变为BaTiO3。最后使用乙酸清洗一遍以除去碳酸钡,然后用去离子水清洗3遍后干燥即可得SiC@BaTiO3核壳纳米粒子。核壳粉体的X射线衍射图谱如图1所示,单个核壳纳米颗粒的透射电镜及元素分布如图2所示。
步骤4,称量0.0833g核壳粉末分散到10ml的二甲基甲酰胺中,超声分散至少4h至形成均匀的悬浊液。然后将1.027g P(VDF-HFP)加入到悬浊液中,使用超声分散和机械震荡数小时,直至形成均匀的悬浊液。通过流延法制备核壳纳米填料质量分数为7.5wt.%的复合膜。90℃干燥,即可得到纳米复合薄膜,复合薄膜为单层,厚度为10~20μm。
步骤5,将所得的复合薄膜在210℃烘箱中加热7min,然后冰水淬火,最后70℃烘干。
步骤6,将步骤5所得的复合薄膜使用ZHD300高真空电阻蒸发镀膜机将薄膜镀上铜电极(直径2mm),以测试电性能。
步骤7,测试。纯P(VDF-HFP)与含7.5wt.%核壳粒子的复合薄膜的介电性能如图3所示。复合薄膜介电常数在1kHz处达到了10.4,比纯P(VDF-HFP)(~5.9)有较大的增强。复合薄膜的介电损耗在1kHz处时为0.06左右,与纯P(VDF-HFP)相差不大。
纯P(VDF-HFP)与含7.5wt.%核壳粒子的复合薄膜在120℃测试的单极电滞回线如图4所示,其中电滞回线的最高点的横坐标代表击穿电场,纵坐标代表最大极化,通过电滞回线可以计算出材料的储能密度以及充放电效率。在120℃,相对于纯P(VDF-HFP),复合材料的放电储能密度和充放电效率都有大幅提高。最大放电储能密度达到2.05J/cm3,达到了纯P(VDF-HFP)(0.36J/cm3)的569.4%。而且在该温度下薄膜的效率仍有65.45%,而纯P(VDF-HFP)的效率仅有34.73%。
图5为纯P(VDF-HFP)与含7.5wt.%核壳粒子的复合薄膜在120℃测试条件下击穿场强的威布尔分布图。通过计算,纯P(VDF-HFP)的平均击穿场强为827.1kV/cm,含7.5wt.%核壳填料复合薄膜平均击穿场强为1524.6kV/cm。
图6为纯P(VDF-HFP)与含7.5wt.%核壳粒子的复合薄膜的动态热机械性能图。纯P(VDF-HFP)在-50~120.8℃温度范围内,应变为非线性;复合薄膜在-50~126℃温度范围内,应变保持线性增加。
实施例2
本实施例与实施例1基本相同,不同之处在于:
步骤4,称量0.1132g核壳粉末分散到10ml的二甲基甲酰胺中,超声分散至少4h至形成均匀的悬浊液。然后将1.0193g P(VDF-HFP)加入到悬浊液中使用超声分散和机械震荡数小时直至均匀的悬浊液。通过流延法制备质量分数为10wt.%的复合膜。90℃干燥,即可得到纳米复合材料薄膜。复合薄膜为单层,厚度为10~20μm。
实施例3
本实施例与实施例1基本相同,不同之处在于:
步骤4,称量0.0256g核壳粉末分散到10ml的二甲基甲酰胺中,超声分散至少4h至形成均匀的悬浊液。然后将0.9998g P(VDF-HFP)加入到悬浊液中使用超声分散和机械震荡数小时直至均匀的悬浊液。通过流延法制备核壳纳米填料质量分数为2.5wt.%的复合膜。90℃干燥,即可得到纳米复合材料薄膜。复合薄膜为单层,厚度为10~20μm。
实施例4
本实施例与实施例1基本相同,不同之处在于:
步骤4,称量0.8547g核壳粉末分散到10ml的二甲基甲酰胺中,超声分散至少4h至形成均匀的悬浊液。然后将0.8547g P(VDF-HFP)加入到悬浊液中使用超声分散和机械震荡数小时直至均匀的悬浊液。通过流延法制备核壳纳米填料质量分数为50wt.%的复合膜。90℃干燥,即可得到纳米复合材料薄膜。复合薄膜为单层,厚度为10~20μm。
实施例5
本实施例的陶瓷及铁电聚合物直接共混合成介电储能复合薄膜及其制备方法,包括以下步骤:
称量0.0285g碳化硅纳米粒子和0.0535g钛酸钡纳米粒子一同分散到10ml的二甲基甲酰胺中,超声分散至少4h至形成均匀的悬浊液。然后将1.012gP(VDF-HFP)加入到悬浊液中,使用超声分散和机械震荡数小时,直至形成均匀的悬浊液。通过流延法制备核壳纳米填料质量分数为7.5wt.%的复合膜。90℃干燥,即可得到纳米复合薄膜,复合薄膜为单层,厚度为10~20μm。
将本实施例5得到的直接混合陶瓷铁电聚合物复合材料与纯P(VDF-HFP)和实施例1得到的核壳结构复合材料在25℃下测试其击穿场强,得到图7所示的图谱,由图7可知,将碳化硅、钛酸钡与铁电聚合物直接共混合成的复合材料击穿强度大幅度降低。这是由于裸露SiC的渗流效应和填料表面未经过表面改性,填料与基体不相容导致该复合材料界面处存在较多缺陷;而且填料与基体之间的性能差异引起的电荷重分布也会导致击穿强度的降低。
以上所述仅为本发明的较佳实施方式而已,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (10)
1.一种耐高温铁电聚合物基介电储能复合薄膜,其包括基材和分散在基材中的核壳纳米填料,其特征在于:
所述基材为聚偏氟乙烯或其共聚物系列铁电聚合物;
所述核壳纳米填料为SiC纳米核及包覆在SiC纳米核上的BaTiO3纳米壳;
核壳纳米填料的质量百分比为2.5%~50%。
2.如权利要求1所述的耐高温铁电聚合物基介电储能复合薄膜,其特征在于:所述铁电聚合物采用PVDF、P(VDF-HFP)、P(VDF-TrFE)或P(VDF-TrFE-HFP)。
3.如权利要求1所述的耐高温铁电聚合物基介电储能复合薄膜,其特征在于:所述核壳纳米填料的粒径为50~500nm,其中,SiC纳米核及BaTiO3纳米壳的用量体积比例为1:(1~3)。
4.如权利要求1所述的耐高温铁电聚合物基介电储能复合薄膜,其特征在于:所述SiC纳米核使用十六烷基三甲基溴化铵进行表面改性。
5.如权利要求1所述的耐高温铁电聚合物基介电储能复合薄膜,其特征在于:所述核壳纳米填料表面采用乙酸进行羟基化改性。
6.如权利要求1所述的耐高温铁电聚合物基介电储能复合薄膜的制备方法,其特征在于:包括以下步骤:
制备得到SiC@BaTiO3核壳纳米粒子;
将SiC@BaTiO3核壳纳米粒子分散到溶剂中,得到悬浊液,再加入铁电聚合物,进行分散,得到悬浮液,通过流延法制备复合膜,80~100℃干燥,即可得到纳米复合材料薄膜。
7.如权利要求6所述的耐高温铁电聚合物基介电储能复合薄膜的制备方法,其特征在于:制备得到SiC@BaTiO3核壳纳米粒子的过程包括,
将SiC@TiO2核壳粒子与八水合氢氧化钡、去离子水溶液一同加入水热釜中,加热处理,SiC@TiO2核壳粒子与氢氧化钡经水热反应生成SiC@BaTiO3;
使用乙酸清洗水热反应后的核壳粒子以除去碳酸钡,并对核壳粒子进行表面羟基化改性,然后用去离子水清洗后干燥,即可得纯相SiC@BaTiO3核壳纳米粒子。
8.如权利要求7所述的耐高温铁电聚合物基介电储能复合薄膜的制备方法,其特征在于:制备SiC@TiO2核壳粒子的过程包括,
将碳化硅分散于正丁醇、去离子水、十六烷基三甲基溴化铵的混合溶液中,超声分散至形成均匀悬浊液A液;
将钛酸四丁酯分散到正丁醇中,超声分散,形成二氧化钛前驱液B液;
在搅拌的情况下,将B液缓慢滴入A液中,以使得钛酸四丁酯完全水解,水解后的自发沉淀即为复合粉体SiC@TiO2,用去离子水清洗3~4遍,90~100℃干燥,得到SiC@TiO2核壳粒子。
9.如权利要求6所述的耐高温铁电聚合物基介电储能复合薄膜的制备方法,其特征在于:将所得的纳米复合材料薄膜在200℃~220℃烘箱中加热6~10min,然后冰水淬火,最后烘干即可得铁电聚合物基介电储能复合薄膜。
10.如权利要求1所述的耐高温铁电聚合物基介电储能复合薄膜在静电电容器中的应用。
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