CN113720478B

CN113720478B - Infrared detector pixel based on CMOS (complementary metal oxide semiconductor) process and infrared detector

Info

Publication number: CN113720478B
Application number: CN202110324052.4A
Authority: CN
Inventors: 翟光杰; 武佩; 潘辉; 翟光强
Original assignee: Beijing North Gaoye Technology Co ltd
Current assignee: Beijing North Gaoye Technology Co ltd
Priority date: 2021-03-26
Filing date: 2021-03-26
Publication date: 2023-03-24
Anticipated expiration: 2041-03-26
Also published as: CN113720478A

Abstract

The present disclosure relates to an infrared detector pixel and an infrared detector based on a CMOS process, including: the CMOS measurement circuit system and the CMOS infrared sensing structure are both prepared by adopting a CMOS process, and at least one closed release isolation layer is arranged above the CMOS measurement circuit system and is positioned in the CMOS infrared sensing structure; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a plurality of columnar structures, wherein the reflecting layer, the infrared conversion structure and the plurality of columnar structures are positioned on the CMOS measuring circuit system; the infrared conversion structure comprises an absorption plate and a plurality of beam structures, wherein at least part of the airtight release isolation layer in the orthographic projection area of the absorption plate is etched, the reflection plate is in electric contact with the grounded supporting base, the problems of low performance, low pixel scale, low yield and the like of the traditional MEMS process infrared detector are solved, the airtight release isolation layer in the CMOS infrared sensing structure reduces the release difficulty of the sacrificial layer, and the detection sensitivity of the infrared detector is improved.

Description

Infrared detector pixel based on CMOS (complementary metal oxide semiconductor) process and infrared detector

Technical Field

The disclosure relates to the technical field of infrared detection, in particular to an infrared detector pixel and an infrared detector based on a CMOS (complementary metal oxide semiconductor) process.

Background

The fields of monitoring markets, vehicle and auxiliary markets, home markets, intelligent manufacturing markets, mobile phone applications and the like have strong demands on uncooled high-performance chips, certain requirements are provided for the performance of the chips, the performance consistency and the product price, the potential demands of more than one hundred million chips are expected every year, and the current process scheme and architecture cannot meet the market demands.

At present, an infrared detector adopts a mode of combining a measuring circuit and an infrared sensing structure, the measuring circuit is prepared by adopting a Complementary Metal-Oxide-Semiconductor (CMOS) process, and the infrared sensing structure is prepared by adopting a Micro-Electro-Mechanical System (MEMS) process, so that the following problems are caused:

(1) The infrared sensing structure is prepared by adopting an MEMS (micro-electromechanical systems) process, polyimide is used as a sacrificial layer, and the infrared sensing structure is incompatible with a CMOS (complementary metal oxide semiconductor) process.

(2) Polyimide is used as a sacrificial layer, so that the problem that the vacuum degree of a detector chip is influenced due to incomplete release exists, the growth temperature of a subsequent film is limited, and the selection of materials is not facilitated.

(3) Polyimide can cause the height of the resonant cavity to be inconsistent, and the working dominant wavelength is difficult to guarantee.

(4) The control of the MEMS process is far worse than that of the CMOS process, and the performance consistency and the detection performance of the chip are restricted.

(5) MEMS has low productivity, low yield and high cost, and can not realize large-scale batch production.

(6) The existing process capability of the MEMS is not enough to support the preparation of a detector with higher performance, and the MEMS has smaller line width and thinner film thickness, thereby being not beneficial to realizing the miniaturization of a chip.

In addition, the resonant cavity in the existing infrared detector is high, and the release difficulty of the sacrificial layer is increased.

Disclosure of Invention

In order to solve the technical problems or at least partially solve the technical problems, the present disclosure provides an infrared detector pixel and an infrared detector based on a CMOS process, which solve the problems of low performance, low pixel scale, low yield and the like of the conventional MEMS process infrared detector, and a hermetic release isolation layer in a CMOS infrared sensing structure reduces the difficulty of releasing a sacrificial layer and improves the detection sensitivity of the infrared detector.

In a first aspect, an embodiment of the present disclosure provides an infrared detector pixel, including:

the CMOS measurement circuit system and the CMOS infrared sensing structure are both prepared by adopting a CMOS process;

the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a plurality of columnar structures, wherein the reflecting layer, the infrared conversion structure and the columnar structures are positioned on the CMOS measuring circuit system;

the CMOS infrared sensing structure also comprises at least one layer of closed release isolation layer positioned on the reflecting layer, and the closed release isolation layer coats the columnar structure;

the infrared conversion structure comprises an absorption plate and a plurality of beam structures, the absorption plate is used for converting infrared signals into electric signals and is electrically connected with the corresponding columnar structures through the corresponding beam structures, at least part of the closed release isolation layer in the CMOS infrared sensor structure is etched in the orthographic projection area of the absorption plate, and the reflection plate is electrically contacted with the grounded supporting base.

Optionally, the material of the hermetic release isolation layer in the CMOS infrared sensing structure includes at least one of silicon, germanium, silicon germanium, amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous carbon, silicon carbide, aluminum oxide, and silicon nitride, and the thickness of the hermetic release isolation layer in the CMOS infrared sensing structure is greater than or equal to 100A and less than or equal to 2000A.

Optionally, the method further includes:

the second dielectric layer is positioned on the closed release isolation layer in the CMOS infrared sensing structure, and covers the closed release isolation layer in the CMOS infrared sensing structure and the reflecting plate arranged in the etching area corresponding to the closed release isolation layer.

Optionally, the material forming the second dielectric layer includes at least one of silicon, germanium, silicon germanium, amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous carbon, silicon carbide, or aluminum oxide.

Optionally, the method further includes:

and the third dielectric layer comprises a patterned dielectric structure, the reflecting plate and the supporting base are positioned on the same layer, and the surface of the third dielectric layer, which is far away from the CMOS measuring circuit system, is flush with the surface of the reflecting layer, which is far away from the CMOS measuring circuit system, by adopting a CMP (chemical mechanical polishing) process.

Optionally, the columnar structures include a plurality of independent columnar structures, the independent columnar structures are located on different layers, and the independent columnar structures are arranged corresponding to one or more layers of the hermetic release isolation layer in the CMOS infrared sensing structure.

Optionally, at least one layer of the hermetic release insulating layer is located at an interface between the CMOS measurement circuit system and the CMOS infrared sensing structure, and the support base is electrically connected to the CMOS measurement circuit system through a through hole penetrating through the hermetic release insulating layer located between the CMOS measurement circuit system and the CMOS infrared sensing structure.

Optionally, a material forming a sacrificial layer located between the reflective layer and the infrared conversion structure includes silicon oxide, the sacrificial layer is used for enabling the CMOS infrared sensing structure to form a hollow structure, the sacrificial layer is etched by using a post-CMOS process, and the sacrificial layer is etched by using at least one of gas-phase hydrogen fluoride, carbon tetrafluoride and trifluoromethane in the post-CMOS process.

In a second aspect, an embodiment of the present disclosure provides an infrared detector, including a plurality of infrared detection pixels according to any one of the first aspect.

Optionally, at least part of the reflective plates of the adjacent infrared detector pixels are in contact with each other.

Compared with the prior art, the technical scheme provided by the embodiment of the disclosure has the following advantages:

(1) The CMOS measurement circuit system and the CMOS infrared sensing structure are integrally prepared on the CMOS production line by utilizing the CMOS process, compared with the MEMS process, the CMOS does not have the process compatibility problem, the technical difficulty of the MEMS process is solved, the transportation cost can be reduced by adopting the CMOS process production line process to prepare the infrared detector, and the risk caused by the transportation problem and the like is reduced; the infrared detector takes silicon oxide as a sacrificial layer, the silicon oxide is completely compatible with a CMOS (complementary metal oxide semiconductor) process, the preparation process is simple and easy to control, the CMOS process does not have the problem that the polyimide of the sacrificial layer is not released cleanly to influence the vacuum degree of a detector chip, the subsequent film growth temperature is not limited by the material of the sacrificial layer, the multilayer process design of the sacrificial layer can be realized, the process is not limited, the planarization can be easily realized by using the sacrificial layer, and the process difficulty and the possible risks are reduced; the infrared detector prepared by the integrated CMOS process can realize the aims of high yield, low cost, high yield and large-scale integrated production of chips, and provides a wider application market for the infrared detector; the infrared detector based on the CMOS process can realize smaller size and thinner film thickness of a characteristic structure, so that the infrared detector has larger duty ratio, lower thermal conductivity and smaller thermal capacity, and the infrared detector has higher detection sensitivity, longer detection distance and better detection performance; the infrared detector based on the CMOS process can make the pixel size of the detector smaller, realize smaller chip area under the same array pixel, and is more beneficial to realizing the miniaturization of a chip; the infrared detector based on the CMOS process has mature process production line and higher process control precision, can better meet the design requirement, has better product consistency, is more beneficial to the adjustment performance of a circuit chip and is more beneficial to industrialized mass production;

(2) The CMOS measurement circuit system top includes at least one deck airtight release insulating layer, airtight release insulating layer is arranged in the etching process of preparation CMOS infrared sensing structure, protection CMOS measurement circuit system does not receive the technology influence, at least one deck airtight release insulating layer is arranged in CMOS infrared sensing structure, airtight release insulating layer can be located the top of the metal interconnection layer of reflector layer for example, airtight release insulating layer cladding columnar structure, through setting up airtight release insulating layer cladding columnar structure, on the one hand can utilize airtight release insulating layer as the support of columnar structure department, columnar structure's stability has been improved, guarantee the electric connection of columnar structure and infrared conversion structure and support base. On the other hand, the airtight release insulating layer coating the columnar structure can reduce the contact between the columnar structure and the external environment, reduce the contact resistance between the columnar structure and the external environment, further reduce the noise of the infrared detector pixel, and improve the detection sensitivity of the infrared detection sensor. In addition, the resonant cavity of the infrared detector is realized by the vacuum cavity after releasing the silicon oxide sacrificial layer, and the sacrificial layer is positioned between the reflecting layer and the infrared conversion structure and is in contact with the reflecting layer and the infrared conversion structure. When at least one layer of closed release isolation layer positioned on the reflection layer is arranged as one part of the resonant cavity, the height of the resonant cavity can be reduced by the closed release isolation layer arranged at the moment, so that the thickness of the sacrificial layer is reduced, and the release difficulty of the sacrificial layer formed by silicon oxide in the resonant cavity is reduced. In addition, a closed release isolation layer and the columnar structure are arranged to form a closed structure, the CMOS measurement circuit system is completely separated from the sacrificial layer, and the CMOS measurement circuit system is protected. The closed release isolation layer in the orthographic projection area provided with at least part of the absorption plate is etched, so that the reflection effect of the resonant cavity reflection plate is ensured, and the detection sensitivity of the CMOS infrared sensing structure is improved. And partial supporting base is arranged to be in electric contact with the reflecting plate, so that the coverage area of the reflecting plate can be further increased, and the detection sensitivity of the infrared detector is further improved.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure.

In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present disclosure, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive exercise.

Fig. 1 is a schematic perspective view of an infrared detector pixel provided in an embodiment of the present invention;

FIG. 2 is a schematic diagram of a partial top view of the infrared detector pixel provided in FIG. 1;

FIG. 3 is a schematic diagram of another partial top view of the infrared detector pixel provided in FIG. 1;

FIG. 4 is a schematic cross-sectional view AA' of the pixel of the infrared detector provided in FIG. 1;

FIG. 5 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the invention;

FIG. 6 is a schematic diagram of a partial top view structure of a pixel of another infrared detector provided by an embodiment of the invention;

FIG. 7 is a schematic cross-sectional view along BB' of the infrared detector pixel provided in FIG. 6;

FIG. 8 is a schematic cross-sectional view of an infrared detector pixel provided in an embodiment of the present invention;

FIG. 9 is a schematic cross-sectional view of an infrared detector pixel provided in an embodiment of the present invention;

FIG. 10 is a schematic cross-sectional view of an infrared detector pixel provided in an embodiment of the invention;

FIG. 11 is a schematic cross-sectional view of an infrared detector pixel according to an embodiment of the present invention;

FIG. 12 is a schematic cross-sectional view of an infrared detector pixel according to an embodiment of the present invention;

FIG. 13 is a schematic diagram of a CMOS measurement circuitry according to an embodiment of the present invention;

FIG. 14 is a schematic cross-sectional view of an infrared detector pixel according to an embodiment of the invention;

fig. 15 is a schematic perspective view of an infrared detector provided in an embodiment of the present disclosure;

FIG. 16 is a schematic perspective view of another infrared detector provided by an embodiment of the present invention;

fig. 17 is a schematic perspective view of an infrared detector in the prior art according to an embodiment of the present invention.

Detailed Description

In order that the above objects, features and advantages of the present disclosure may be more clearly understood, aspects of the present disclosure will be further described below. It should be noted that, in the case of no conflict, the embodiments and features in the embodiments of the present disclosure may be combined with each other.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure may be practiced in other ways than those described herein; it is to be understood that the embodiments disclosed in the specification are only a few embodiments of the present disclosure, and not all embodiments.

Fig. 1 is a schematic perspective structure diagram of an infrared detector pixel provided in an embodiment of the present invention, fig. 2 is a schematic partial top view structure diagram of the infrared detector pixel provided in fig. 1, fig. 3 is a schematic partial top view structure diagram of the infrared detector pixel provided in fig. 1, fig. 4 is a schematic cross-sectional structure diagram of the infrared detector pixel provided in fig. 1 along AA', and in conjunction with fig. 1, fig. 2, fig. 3, and fig. 4, an infrared detector pixel 01 includes: the CMOS measurement circuit system 100 and the CMOS infrared sensing structure 200 positioned on the CMOS measurement circuit system 100, and the CMOS measurement circuit system 100 and the CMOS infrared sensing structure 200 are both prepared by adopting a CMOS process, and the CMOS infrared sensing structure 200 is directly prepared on the CMOS measurement circuit system 100. The CMOS measurement circuit system 100 comprises at least one layer of closed release isolation layer 40 above, the closed release isolation layer 40 is used for protecting the CMOS measurement circuit system 100 from being influenced by a process in an etching process for manufacturing the CMOS infrared sensing structure 100, and the at least one layer of closed release isolation layer 40 is located in the CMOS infrared sensing structure. The CMOS fabrication process of the CMOS infrared sensing structure 200 includes a metal interconnection process, a via process, and an RDL process, and the CMOS infrared sensing structure 200 includes at least two metal interconnection layers, at least two dielectric layers, and a plurality of interconnection vias. The CMOS infrared sensing structure 200 includes a reflective layer 10, an infrared conversion structure 20 and a plurality of columnar structures 30 on the CMOS measurement circuitry, the columnar structures 30 are located between the reflective layer 10 and the infrared conversion structure 20, the reflective layer 10 includes a reflective plate 11 and a supporting base 12, and the infrared conversion structure 20 is electrically connected to the CMOS measurement circuitry 100 through the columnar structures 30 and the supporting base 12. The infrared conversion structure 20 includes an absorption plate 21 and a plurality of beam structures 22, the absorption plate 21 is used to convert an infrared signal into an electrical signal and is electrically connected to the corresponding pillar structures 30 through the corresponding beam structures 22, the hermetic release barrier layer 40 in the orthographic projection area of at least a portion of the absorption plate 21 is etched away, and the reflection plate 11 is electrically contacted to the grounded support base 12.

Specifically, the CMOS infrared sensing structure 200 is configured to convert an external infrared signal into an electrical signal and transmit the electrical signal to the CMOS measurement circuit system 100, and the CMOS measurement circuit system 100 reflects temperature information of the corresponding infrared signal according to the received electrical signal, thereby implementing a temperature detection function of the infrared detector. The CMOS measurement circuit system 100 and the CMOS infrared sensing structure 200 are both prepared by using CMOS technology, and the CMOS infrared sensing structure 200 is directly prepared on the CMOS measurement circuit system 100, namely, the CMOS measurement circuit system 100 is prepared by using the CMOS technology, and then the CMOS infrared sensing structure 200 is continuously prepared by using the CMOS technology and parameters of various processes compatible with the CMOS production line.

Therefore, the CMOS measurement circuit system 100 and the CMOS infrared sensing structure 200 are integrally prepared on the CMOS production line by utilizing the CMOS process, compared with the MEMS process, the CMOS process does not have the process compatibility problem, the technical difficulty faced by the MEMS process is solved, the transportation cost can be reduced by adopting the CMOS production line process to prepare the infrared detector, and the risk caused by the transportation problem and the like is reduced; the infrared detector takes silicon oxide as a sacrificial layer, the silicon oxide is completely compatible with a CMOS (complementary metal oxide semiconductor) process, the preparation process is simple and easy to control, the CMOS process does not have the problem that the polyimide of the sacrificial layer is not released cleanly to influence the vacuum degree of a detector chip, the subsequent film growth temperature is not limited by the material of the sacrificial layer, the multilayer process design of the sacrificial layer can be realized, the process is not limited, the planarization can be easily realized by using the sacrificial layer, and the process difficulty and the possible risks are reduced; the infrared detector prepared by the integrated CMOS process can realize the aims of high yield, low cost, high yield and large-scale integrated production of chips, and provides a wider application market for the infrared detector; the infrared detector based on the CMOS process can realize smaller size and thinner film thickness of a characteristic structure, so that the infrared detector has larger duty ratio, lower thermal conductivity and smaller thermal capacity, and the infrared detector has higher detection sensitivity, longer detection distance and better detection performance; the infrared detector based on the CMOS process can make the pixel size of the detector smaller, realize smaller chip area under the same array pixel, and is more beneficial to realizing the miniaturization of a chip; the infrared detector based on the CMOS process has the advantages of mature process production line, higher process control precision, better meeting design requirements, better product consistency, more contribution to circuit chip adjustment performance and more contribution to industrialized mass production.

Referring to fig. 1 and 2, the CMOS infrared sensing structure 200 includes a reflective layer 10, an infrared conversion structure 20, and a plurality of pillar structures 30 on the CMOS measurement circuit system 100, where the reflective layer 10 is used to reflect infrared rays to an absorption plate in a detector pixel and implement secondary absorption of infrared rays by matching with a resonant cavity, the plurality of pillar structures 30 are used to support the infrared conversion structure 20 in the detector pixel, the infrared conversion structure 20 detects an infrared radiation signal and converts the detected infrared radiation signal into an electrical signal, the electrical signal formed by conversion is transmitted to the CMOS measurement circuit system 100 through the pillar structures 30, and the CMOS measurement circuit system 100 processes and outputs the electrical signal.

Specifically, the pillar structure 30 is located between the reflective layer 10 and the infrared conversion structure 20, and is configured to support the infrared conversion structure 20 after a sacrificial layer on the CMOS measurement circuit system 100 is released, the sacrificial layer is located between the reflective layer 10 and the infrared conversion structure 20, the pillar structure 30 is a metal structure, an electrical signal converted by an infrared signal of the infrared conversion structure 20 is transmitted to the CMOS measurement circuit system 100 through the corresponding pillar structure 30 and the corresponding support base 12, the CMOS measurement circuit system 100 processes the electrical signal to reflect temperature information, and non-contact infrared temperature detection of the infrared detector is achieved. The CMOS infrared sensing structure 200 outputs a positive electrical signal and a ground electrical signal through different electrode structures, and the positive electrical signal and the ground electrical signal are transmitted to the supporting base 12 electrically connected to the columnar structures 30 through different columnar structures 30, fig. 1 and 2 schematically illustrate the direction parallel to the CMOS measurement circuit system 100, the CMOS infrared sensing structure 200 includes two columnar structures 30, one of the columnar structures 30 may be configured to transmit the positive electrical signal, the other columnar structure 30 is configured to transmit the ground electrical signal, and the CMOS infrared sensing structure 200 may also include four columnar structures 30, and each two of the four columnar structures 30 are respectively configured to transmit the positive electrical signal and the ground electrical signal. In addition, the reflective layer 10 includes a reflective plate 11 and a supporting base 12, a portion of the reflective layer 10 is used as a dielectric for electrically connecting the columnar structure 30 with the CMOS measurement circuit system 100, that is, the supporting base 12, and the reflective plate 11 is used for reflecting infrared rays to the infrared conversion structure 20, and the secondary absorption of infrared rays is realized by matching with a resonant cavity formed between the reflective layer 10 and the infrared conversion structure 20, so as to improve the infrared absorption rate of the infrared detector and optimize the infrared detection performance of the infrared detector.

In the reflective layer 10, the material of the reflective plate 11 may be at least one of aluminum, copper, tungsten, titanium, nickel, chromium, platinum, silver, ruthenium, or cobalt, the material of the reflective plate 11 is not particularly limited in the embodiment of the present invention, and the thickness of the reflective layer 10 is 1000A to 10000A.

Referring to fig. 2, the CMOS measurement circuit system 100 includes at least one hermetic release isolation layer 40 above, the hermetic release isolation layer 40 is used to protect the CMOS measurement circuit system 100 from process influence during an etching process for manufacturing the CMOS infrared sensing structure 200, the at least one hermetic release isolation layer 40 is located in the CMOS infrared sensing structure 200, fig. 2 exemplarily sets the hermetic release isolation layer 400 in the CMOS infrared sensing structure 200, the hermetic release isolation layer 40 may be located above a metal interconnection layer of the reflection layer 10, for example, the hermetic release isolation layer 40 covers the pillar-shaped structure 30, and by providing the hermetic release isolation layer 40 to cover the pillar-shaped structure 30, on one hand, the hermetic release isolation layer 40 may be used as a support at the pillar-shaped structure 30, so as to improve stability of the pillar-shaped structure 30, and ensure electrical connection between the pillar-shaped structure 30 and the infrared conversion structure 20 and the support base 12. On the other hand, the airtight release insulating layer 40 covering the columnar structure 30 can reduce the contact between the columnar structure 30 and the external environment, reduce the contact resistance between the columnar structure 30 and the external environment, further reduce the noise of the infrared detector pixel, and improve the detection sensitivity of the infrared detection sensor. In addition, the resonant cavity of the infrared detector is realized by releasing the vacuum cavity after the silicon oxide sacrifice layer is arranged between the reflecting layer and the infrared conversion structure and is in contact with the reflecting layer and the infrared conversion structure. When at least one layer of the closed release isolation layer 40 on the reflection layer 10 is arranged as a part of the resonant cavity, the height of the resonant cavity can be reduced by the closed release isolation layer 40, so that the thickness of the sacrificial layer is reduced, and the release difficulty of the sacrificial layer formed by silicon oxide in the resonant cavity is reduced. In addition, the hermetic release isolation layer 40 and the columnar structure 30 are arranged to form a hermetic structure, so as to completely separate the CMOS measurement circuit system 100 from the sacrificial layer, thereby protecting the CMOS measurement circuit system 100.

The CMOS manufacturing process of the CMOS infrared sensing structure 200 comprises a metal interconnection process, a through hole process and an RDL (remote description language) process, wherein the CMOS infrared sensing structure 200 comprises at least two metal interconnection layers, at least two dielectric layers and a plurality of interconnection through holes, the dielectric layers at least comprise a sacrificial layer and a heat sensitive dielectric layer, the heat sensitive dielectric layer at least comprises a heat sensitive layer and also comprises a supporting layer and/or a passivation layer, and the metal interconnection layers at least comprise a reflecting layer and an electrode layer; the thermal sensitive medium layer comprises a thermal sensitive material with a resistance temperature coefficient larger than a set value, the resistance temperature coefficient can be larger than or equal to 0.015/K, for example, the thermal sensitive material with the resistance temperature coefficient larger than the set value forms a thermal sensitive layer in the thermal sensitive medium layer, the thermal sensitive medium layer is used for converting temperature change corresponding to infrared radiation absorbed by the thermal sensitive medium layer into resistance change, and then an infrared target signal is converted into a signal capable of being read electrically through the CMOS measurement circuit system 100.

Specifically, the metal interconnection process is used for realizing the electrical connection of an upper metal interconnection layer and a lower metal interconnection layer, the through hole process is used for forming an interconnection through hole for connecting the upper metal interconnection layer and the lower metal interconnection layer, the RDL process is a rewiring layer process, specifically, a layer of metal is newly distributed above the top metal of the circuit and is electrically connected with the top metal of the circuit through a tungsten column, the reflection layer 10 in the infrared detector can be prepared on the top metal of the CMOS measurement circuit system 100 by adopting the RDL process, and the support base 12 on the reflection layer 10 is electrically connected with the top metal of the CMOS measurement circuit system 100. In addition, the heat-sensitive dielectric layer comprises a heat-sensitive material with a resistance temperature coefficient larger than a set value, and the resistance temperature coefficient can be larger than or equal to 0.015/K, so that the detection sensitivity of the infrared detector can be improved.

In addition, by setting at least part of the hermetic release insulating layer 40 in the orthographic projection region of the absorption plate 21 to be etched, preferably, the hermetic release insulating layer 40 in the orthographic projection region of the absorption plate 21 can be set to be completely etched, as shown in fig. 2, that is, when the hermetic release insulating layer 40 is formed, part of the hermetic release insulating layer 40 corresponding to the absorption plate 21 is etched by an etching process, so that the hermetic release insulating layer 40 has no influence on the reflection effect of the resonant cavity, the reflection effect of the reflection plate 11 of the resonant cavity is ensured, and the detection sensitivity of the CMOS infrared sensing structure is improved.

When the hermetic release isolation layer 40 in the orthographic projection region of at least part of the reflection plate 11 in the CMOS infrared sensing structure is etched, at this time, the material forming the hermetic release isolation layer 40 may be at least one of silicon, germanium, silicon germanium, amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous carbon, silicon carbide, aluminum oxide or silicon nitride, and the thickness of the hermetic release isolation layer is greater than or equal to 100A and less than or equal to 2000A, specifically, silicon, germanium, silicon germanium, amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous carbon, silicon carbide, aluminum oxide or silicon nitride is a CMOS process corrosion-resistant material, that is, these materials are not corroded by the sacrificial layer release reagent, so the hermetic release isolation layer 40 may be used to protect the CMOS measurement circuit system 100 from corrosion when the corrosion process is performed to release the sacrificial layer. In addition, the sealing release isolation layer 40 covers the CMOS measurement circuit system 100, and the sealing release isolation layer 40 can also be used to protect the CMOS measurement circuit system 100 from process influence during the etching process for manufacturing the CMOS infrared sensing structure 200. In addition, when at least one layer of airtight release isolation layer 40 is arranged on the reflection layer 10, the material for forming the airtight release isolation layer 40 is arranged to include at least one of silicon, germanium, silicon germanium, amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous carbon, silicon carbide, aluminum oxide or silicon nitride, the thickness of the airtight release isolation layer 40 is greater than 100A and less than or equal to 2000A, when the airtight release isolation layer 40 is arranged to improve the stability of the columnar structure 30, the airtight release isolation layer 40 hardly influences the reflection process in the resonant cavity, the influence of the airtight release isolation layer 40 on the reflection process of the resonant cavity can be avoided, and further the influence of the airtight release isolation layer 40 on the detection sensitivity of the infrared detector is avoided.

It should be noted that fig. 4 exemplarily shows that the columnar structure 30 is a solid structure, and in other embodiments, the columnar structure 30 may also be provided as a hollow structure, and specifically refer to fig. 5, and the embodiment of the present invention does not limit the specific structure of the columnar structure 30. In addition, the material of the pillar structure 30 may be a metal material or a non-metal material, as long as it is ensured that an electrical signal can be transmitted to the CMOS measurement circuitry 100 through the pillar structure 30 and the supporting base 12.

With continued reference to fig. 1, the infrared conversion structure 20 includes an absorption plate 21 and a plurality of beam structures 22, the absorption plate 21 being used to convert infrared signals into electrical signals and being electrically connected to the corresponding pillar structures 30 through the corresponding beam structures 22. Specifically, the absorption plate 21 is configured to convert an infrared signal into an electrical signal and is electrically connected to the corresponding columnar structure 30 through the corresponding beam structure 22, the absorption plate 21 includes a supporting layer, an electrode layer, a thermal sensitive layer and a passivation layer, the beam structure 22 may include a supporting layer, an electrode layer and a passivation layer, the beam structure 22 may further include a thermal sensitive layer, the supporting layer is located on one side of the passivation layer close to the CMOS measurement circuit system 100, the electrode layer and the thermal sensitive layer are located between the supporting layer and the passivation layer, the passivation layer covers the electrode layer, and the position of the beam structure can be covered by the thermal sensitive layer.

Specifically, the supporting layer is used for supporting an upper film layer in the infrared conversion structure 20 after the sacrificial layer is released, the thermosensitive layer is used for converting infrared temperature detection signals into infrared detection electric signals, the electrode layer is used for transmitting the infrared detection electric signals converted by the thermosensitive layer to the CMOS measurement circuit system 100 through beam structures on the left side and the right side, the two beam structures transmit positive and negative signals of the infrared detection electric signals respectively, a reading circuit in the CMOS measurement circuit system 100 realizes non-contact infrared temperature detection through analysis of the acquired infrared detection electric signals, and the passivation layer is used for protecting the electrode layer from oxidation or corrosion. In addition, the thermosensitive layer may be located above the electrode layer or below the electrode layer. Can set up and correspond the absorption plate, temperature sensing layer and electrode layer are located the airtight space that supporting layer and passivation layer formed, realize the protection to temperature sensing layer and electrode layer in the absorption plate, correspond the beam structure, and the electrode layer is located the airtight space that supporting layer and passivation layer formed, realizes the protection to electrode layer in the beam structure.

At least two ends of the beam structure and the absorber plate may be electrically connected, the CMOS infrared sensing structure 200 includes at least two pillar structures 30 and at least two support bases 12, and the electrode layer includes at least two electrode terminals. Specifically, the beam structure is electrically connected to two ends of the absorption plate, each beam structure is electrically connected to one end of the absorption plate, the CMOS infrared sensing structure 200 includes two pillar structures 30, the electrode layer includes at least two electrode terminals, at least a portion of the electrode terminals transmit positive electrical signals, and at least a portion of the electrode terminals transmit negative electrical signals, and the signals are transmitted to the supporting base 12 through the corresponding beam structure and the pillar structures 30. Or a beam structure can be electrically connected with four ends of the absorption plate, each beam structure is electrically connected with two ends of the absorption plate, the CMOS infrared sensing structure 200 comprises four columnar structures 30, and one beam structure is connected with two columnar structures 30. It should be noted that, in the embodiment of the present disclosure, the number of the connecting ends of the beam structure and the absorbing plate is not specifically limited, and it is sufficient to ensure that the beam structure and the electrode end correspond to each other, and the beam structure is used for transmitting the electrical signal output by the corresponding electrode end.

The beam structure 22 and the columnar structure 30 are used for transmitting electrical signals and for supporting and connecting the absorption plate 21, the electrode layer in the absorption plate 21 includes two patterned electrode structures, the two patterned electrode structures output positive electrical signals and ground electrical signals respectively, the positive electrical signals and the ground electrical signals are transmitted to the supporting base electrically connected with the columnar structure through different beam structures and different columnar structures and then transmitted to the CMOS measurement circuit system 100, the beam structure includes a metal interconnection layer and at least one layer of dielectric layer, the metal interconnection layer in the beam structure is the electrode layer in the beam structure, the electrode layer in the beam structure is electrically connected with the electrode layer in the absorption plate, and the dielectric layer in the beam structure may include a supporting layer and a passivation layer.

For example, the material forming the heat sensitive layer may include at least one of amorphous silicon, amorphous germanium, amorphous silicon germanium, titanium oxide, vanadium oxide, or titanium vanadium oxide, the material forming the support layer may include one or more of amorphous carbon, aluminum oxide, amorphous silicon, amorphous germanium, or amorphous silicon germanium, the material forming the electrode layer may include one or more of titanium, titanium nitride, tantalum nitride, titanium tungsten alloy, nickel-chromium alloy, nickel-silicon alloy, nickel, or chromium, and the material forming the passivation layer may include one or more of amorphous carbon, aluminum oxide, amorphous silicon, amorphous germanium, or amorphous silicon germanium. In addition, the absorption plate is arranged to comprise a thermosensitive layer, when the thermosensitive layer is made of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium, the supporting layer and/or the passivation layer on the beam structure can be replaced by the thermosensitive layer, and the amorphous silicon, the amorphous germanium or the amorphous silicon germanium has low thermal conductivity, so that the thermal conductivity of the beam structure is reduced, and the infrared response rate of the infrared detector is further improved.

Further, the absorption plate and the beam structure may be arranged in the same layer or in different layers, and when the absorption plate and the beam structure are arranged in different layers, the beam structure is located on one side of the absorption plate structure close to the CMOS measurement circuit system, which is not specifically limited in the embodiment of the present invention.

When the supporting base 12 is prepared and formed, a part of the supporting base 12 may be disposed to be in electrical contact with the reflection plate 11, as shown in fig. 3, and after a part of the supporting base 12 is electrically contacted with the reflection plate 11, the coverage area of the reflection plate 11 may be increased, and the detection sensitivity of the infrared detector may be improved. When part of the supporting base 12 is in electrical contact with the reflective plate 11, there is an accumulation of charge on the supporting base 12 that affects the transmission of electrical signals from the infrared conversion structure 20 to the CMOS measurement circuitry 100, affecting the electrical performance of the infrared detection sensor. Therefore, when the supporting base 12 is disposed to be in electrical contact with the reflection plate 11, the supporting base 12 in electrical contact with the reflection plate 11 may be disposed to be grounded at this time, and the electric charge accumulated in the supporting base 12 is discharged by the grounding, thereby securing the electrical performance of the infrared detection sensor circuit.

Fig. 3 is a schematic structural diagram illustrating an electrical connection between the reflection plate 11 and the grounded support base 12, and other arrangements are also possible, see fig. 6 and 7, and the embodiment of the present invention does not specifically limit the electrical connection between the reflection plate 11 and the support base 12.

Optionally, on the basis of the foregoing embodiment, fig. 8 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in an embodiment of the present invention, and as shown in fig. 8, the infrared detector pixel further includes a second dielectric layer 60 located in the CMOS infrared sensing structure 200, where the second dielectric layer 60 is located on the hermetic release insulating layer 40, and the second dielectric layer 60 covers the hermetic release insulating layer 40 located in the CMOS infrared sensing structure 200 and the reflection plate 11 disposed in the etching area corresponding to the hermetic release insulating layer 40.

Exemplarily, referring to fig. 8, the infrared detector pixel further includes a second dielectric layer 60, the second dielectric layer 60 covers the hermetic release insulating layer 40 and the reflective plate 11 disposed corresponding to the etching region of the hermetic release insulating layer 40, and by disposing the second dielectric layer 60, on one hand, the reflective plate 11 can be protected by using the second dielectric layer 60, and on the other hand, the hermetic release insulating layer 40 can be protected by using the second dielectric layer 60.

It should be noted that the material of the second dielectric layer 60 may be at least one of silicon, germanium, silicon germanium, amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous carbon, silicon carbide, or aluminum oxide, and the embodiment of the present invention does not specifically limit the material of the second dielectric layer 60. In addition, the thickness of the second dielectric layer 60 is set to 1000A-20000A.

In addition, when the material constituting the second dielectric layer 60 is at least one of silicon, germanium, silicon germanium, amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous carbon, silicon carbide or aluminum oxide, the thickness of the sacrificial layer in the resonant cavity can be reduced by preparing the formed second dielectric layer 60, and the difficulty in releasing the sacrificial layer in the resonant cavity is further reduced.

Optionally, on the basis of the foregoing embodiment, fig. 9 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in an embodiment of the present invention, and as shown in fig. 9, the infrared detector pixel further includes a third dielectric layer 50, where the third dielectric layer 50 includes a patterned dielectric structure 51, the patterned dielectric structure 51 is located on the same layer as the reflective plate 11 and the supporting base 12, and a CMP process is adopted to make a surface of the third dielectric layer 50 facing away from the CMOS measurement circuit system 100 flush with a surface of the reflective layer 10 facing away from the CMOS measurement circuit system 100.

As shown in fig. 9, the infrared detector pixel further includes a third dielectric layer 50, where the third dielectric layer 50 includes a patterned dielectric structure 51, and the patterned dielectric structure 51, the reflective plate 11 and the supporting base 12 are located on the same layer, after the reflective plate 11 and the supporting base 12 are prepared and formed, the third dielectric layer 50 is formed on a side of the reflective plate 11 and the supporting base 12 away from the CMOS measurement circuit system 100, so that the third dielectric layer 50 fills a gap between the reflective plate 11 and the supporting base 12, and then the reflective layer 10 and the third dielectric layer 50 are processed by using a CMP (Chemical Mechanical Polishing) process, so that a surface of the third dielectric layer 50 away from the CMOS measurement circuit system 100 is flush with a surface of the reflective layer 10 away from the CMOS measurement circuit system 100, and at this time, the third dielectric layer 50 filling the gap between the reflective plate 11 and the supporting base 12 is the patterned dielectric structure. The surface planarization of the patterned dielectric structure 51, the reflective plate 11 and the supporting base 12 can be realized by adopting a CMP process, the preparation complexity of the subsequent process can be reduced, and the CMOS measurement circuit system 100 can be well protected by reasonably matching the third dielectric layer 50 with the reflective plate 11 and the supporting base 12.

It should be noted that the material of the third dielectric layer 50 may be at least one of silicon, chromium, silicon chromide, amorphous silicon, amorphous chromium, amorphous silicon chromium, amorphous carbon, silicon carbide, aluminum oxide, silicon carbonitride, or silicon nitride, and the material of the third dielectric layer 50 is not specifically limited in the embodiment of the present invention. In addition, the thickness of the third dielectric layer 50 is set to 1000A-10000A.

Optionally, on the basis of the foregoing embodiment, fig. 10 is a schematic cross-sectional structure diagram of another infrared detection pixel provided in an embodiment of the present invention, and as shown in fig. 10, the pillar structure 30 includes a plurality of independent pillar structures, the independent pillar structures are located in different layers, and the independent pillar structures are disposed corresponding to one or more layers of hermetic release isolation layers 40 located in the CMOS infrared sensor structure.

Exemplarily, as shown in fig. 10, the columnar structure 30 includes a plurality of independent columnar structures, and the independent columnar structures correspond to one or more layers of airtight release insulating layers 40, and at this time, the thickness of the airtight release insulating layers 40 can be formed through control, so as to realize accurate control of the thickness of the film layer, thereby reducing the process complexity. The columnar structure 30 comprises a plurality of independent columnar structures, and at the moment, the columnar structure 30 can be prepared and formed in a plurality of processes, so that the conductivity of the columnar structure 30 is improved, and the consistency of the infrared detection sensor is improved. In addition, the pillar structure 30 includes a plurality of independent pillar structures located at different layers, which is beneficial to improving the straightness of the pillar structure.

It should be noted that fig. 10 exemplarily shows that the pillar-shaped structure 30 includes two independent pillar-shaped

structures

30A and 30B, and the independent pillar-shaped structure 30A is disposed corresponding to two layers of the hermetic release barrier 40, and the independent pillar-shaped structure 30B is disposed corresponding to one layer of the hermetic release barrier 40. In other possible embodiments, the columnar structure 30 may also include more than two independent columnar structures, and a layer of airtight release insulating layer 40 or multiple layers of airtight release insulating layers 40 may be provided corresponding to different independent columnar structures.

Further, when the pillar structure 30 is prepared to include a plurality of independent pillar structures, the contact surfaces of adjacent independent pillar structures may be electrically connected by disposing an adhesion layer having conductivity to optimize the electrical contact effect between the independent pillar structures, and for example, the material constituting the adhesion layer may include at least one of titanium, titanium nitride, tantalum, or tantalum nitride.

Alternatively, on the basis of the above embodiment, fig. 11 is a schematic cross-sectional structure diagram of another infrared detector pixel provided in an embodiment of the present invention, and as shown in fig. 11, at least one hermetic release isolation layer 40 is located at an interface between the CMOS measurement circuitry 100 and the CMOS infrared sensing structure 200, and the support base 12 is electrically connected to the CMOS measurement circuitry 100 through a through hole penetrating through the hermetic release isolation layer 40 located between the CMOS measurement circuitry 100 and the CMOS infrared sensing structure 200.

Illustratively, as shown in fig. 11, at least one hermetic release barrier 40 is located at the interface between the CMOS measurement circuitry 100 and the CMOS infrared sensing structure 200. For example, the hermetic release insulating layer 40 is located between the reflective layer 10 and the CMOS measurement circuitry 100, i.e., the hermetic release insulating layer 40 is located under the metal interconnection layer of the reflective layer 10, and the support base 12 is electrically connected to the CMOS measurement circuitry 100 through a through hole penetrating the hermetic release insulating layer 40. Specifically, since the CMOS measurement circuit system 100 and the CMOS infrared sensing structure 200 are both formed by using a CMOS process, after the CMOS measurement circuit system 100 is formed, a wafer including the CMOS measurement circuit system 100 is transferred to a next process to form the CMOS infrared sensing structure 200, and since silicon oxide is a most commonly used dielectric material in the CMOS process and silicon oxide is mostly used as an insulating layer between metal layers in the CMOS circuit, if no insulating layer is used as a barrier when silicon oxide having a thickness of about 2um is corroded, the circuit will be seriously affected, so that the silicon oxide dielectric on the CMOS measurement circuit system is not corroded when the silicon oxide of the sacrificial layer is released, and the hermetic release insulating layer 40 is provided. After the CMOS measurement circuit system 100 is prepared and formed, a closed release isolation layer 40 is prepared and formed on the CMOS measurement circuit system 100, the CMOS measurement circuit system 100 is protected by the closed release isolation layer 40, and in order to ensure the electrical connection between the support base 12 and the CMOS measurement circuit system 100, after the closed release isolation layer 40 is prepared and formed, a through hole is formed in a region of the closed release isolation layer 40 corresponding to the support base 12 by using an etching process, and the support base 12 is electrically connected with the CMOS measurement circuit system 100 through the through hole. In addition, the hermetic release isolation layer 40 and the support base 12 are arranged to form a hermetic structure, so as to completely separate the CMOS measurement circuit system 100 from the sacrificial layer, thereby protecting the CMOS measurement circuit system 100.

It should be noted that, when the hermetic release isolation layer 40 is located between the reflective layer 10 and the CMOS measurement circuitry 100, for example, the material constituting the hermetic release isolation layer 40 may include at least one of silicon, germanium, silicon germanium, amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous carbon, silicon carbide, or aluminum oxide, and the thickness of the hermetic release isolation layer 40 is greater than or equal to 1000A and less than or equal to 20000A. Specifically, silicon, germanium, silicon germanium, amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous carbon, silicon carbide, or aluminum oxide are all CMOS process corrosion resistant materials, i.e., these materials are not corroded by the sacrificial layer release agent, so the hermetic release barrier layer 40 can be used to protect the CMOS measurement circuitry 100 from corrosion when the corrosion process is performed to release the sacrificial layer. In addition, the sealing release isolation layer 400 is disposed to cover the CMOS measurement circuit system 100, and the sealing release isolation layer 40 may also be used to protect the CMOS measurement circuit system 100 from process effects during an etching process for manufacturing the CMOS infrared sensing structure 200.

Optionally, the side length of the supporting base 12 is greater than or equal to 0.5 micrometers and less than or equal to 3 micrometers.

When the CMOS process is used to form the CMOS measurement circuit system 100 and the CMOS infrared sensing structure 200, the side length of the support base 12 formed by the CMOS process is greater than or equal to 0.5 micrometers and less than or equal to 3 micrometers, that is, the size of the support base can be effectively reduced by using the CMOS process, the area of the reflection plate 11 can be further increased, the reflection effect of the resonant cavity can be optimized, and the detection sensitivity of the infrared detection sensor can be improved.

The sacrificial layer between the reflection layer 10 and the infrared conversion structure 20 is made of silicon oxide, the sacrificial layer is used for enabling the CMOS infrared sensing structure to form a hollow structure, and a post-CMOS process is adopted to corrode the sacrificial layer, and the post-CMOS process corrodes the sacrificial layer by adopting at least one of gas-phase hydrogen fluoride, carbon tetrafluoride and trifluoromethane.

Illustratively, silicon oxide is used as a sacrificial layer of the CMOS infrared sensing structure, and the sacrificial layer is located between the hermetic release isolation layer and the infrared conversion structure. For example, the post-CMOS process may etch the sacrificial layer using at least one of gaseous hydrogen fluoride, carbon tetrafluoride and trifluoromethane, the material constituting the sacrificial layer is silicon oxide so as to be compatible with the CMOS process, and the post-CMOS process may etch the sacrificial layer so as to release the sacrificial layer in the final infrared detection chip product.

Optionally, fig. 12 is a schematic cross-sectional structure diagram of a pixel of another infrared detector provided in an embodiment of the present invention, as shown in fig. 12, a CMOS manufacturing process of the CMOS measurement circuit system 100 may also include a metal interconnection process and a via process, the CMOS measurement circuit system 100 includes metal interconnection layers 101 and dielectric layers 102 arranged at intervals, and a silicon substrate 103 located at the bottom, where the upper and lower metal interconnection layers 101 are electrically connected through vias 104.

The CMOS infrared sensing structure 200 includes a resonant cavity formed by a reflective layer 10 and a heat sensitive dielectric layer, a suspended microbridge structure for controlling heat transfer, and a pillar structure 30 having electrical connection and support functions, and the CMOS measurement circuitry 100 is used for measuring and processing an array resistance value formed by one or more CMOS infrared sensing structures 200 and converting an infrared signal into an image electrical signal.

Specifically, the resonant cavity may be formed by a cavity between the reflective layer 10 and the absorbing plate, for example, the infrared light is reflected back and forth in the resonant cavity through the absorbing plate to improve the detection sensitivity of the infrared detector, and due to the arrangement of the columnar structure 30, the beam structure and the absorbing plate form a suspended micro-bridge structure for controlling the heat transfer, and the columnar structure 30 is electrically connected to the supporting base 12 and the corresponding beam structure, and is also used for supporting the infrared conversion structure 20 on the columnar structure 30.

Fig. 13 is a schematic structural diagram of a CMOS measurement circuit system according to an embodiment of the present invention. With reference to fig. 1 and 13, the cmos measurement circuit system 100 includes a bias voltage generation circuit 701, a column-level analog front-end circuit 801 and a row-level circuit 901, an input terminal of the bias voltage generation circuit 701 is connected to an output terminal of the row-level circuit 901, an input terminal of the column-level analog front-end circuit 801 is connected to an output terminal of the bias voltage generation circuit 701, the row-level circuit 901 includes a row-level mirror image element Rsm and a row selection switch K1, and the column-level analog front-end circuit 801 includes a blind image element RD; the row-level circuit 901 is distributed in each pixel, selects a signal to be processed according to a row strobe signal of the timing generation circuit, and outputs a current signal to the column-level analog front-end circuit 801 under the action of the bias generation circuit 701 to perform current-voltage conversion output; the row stage circuit 901 outputs a third bias voltage VRsm to the bias generation circuit 701 when being controlled by the row selection switch K1 to be gated, the bias generation circuit 701 outputs a first bias voltage V1 and a second bias voltage V2 according to an input constant voltage and the third bias voltage VRsm, and the column stage analog front end circuit 801 obtains two currents according to the first bias voltage V1 and the second bias voltage V2, performs transimpedance amplification on a difference between the two generated currents, and outputs the amplified current as an output voltage.

Specifically, the row stage circuit 901 includes a row stage mirror image element Rsm and a row selection switch K1, and the row stage circuit 901 is configured to generate a third bias voltage VRsm according to a gating state of the row selection switch K1. Illustratively, the row-level image elements Rsm may be subjected to a shading process, so that the row-level image elements Rsm are subjected to a fixed radiation of a shading sheet with a temperature constantly equal to the substrate temperature, the row selection switch K1 may be implemented by a transistor, the row selection switch K1 is closed, and the row-level image elements Rsm are connected to the bias generation circuit 701, that is, the row-level circuit 901 outputs the third bias voltage VRsm to the bias generation circuit 701 when being controlled by the row selection switch K1 to be turned on. The bias generating circuit 701 may include a first bias generating circuit 71 and a second bias generating circuit 72, the first bias generating circuit 71 being configured to generate a first bias voltage V1 according to an input constant voltage, which may be, for example, a positive power supply signal with a constant voltage. The second bias generating circuit 72 may include a bias control sub-circuit 721 and a plurality of gate driving sub-circuits 722, the bias control sub-circuit 721 controlling the gate driving sub-circuits 722 to generate the corresponding second bias voltages V, respectively, according to the third bias voltage VRsm.

The column-level analog front-end circuit 801 includes a plurality of column control sub-circuits 81, the column control sub-circuits 81 are disposed corresponding to the gate driving sub-circuits 722, and exemplarily, the column control sub-circuits 81 may be disposed corresponding to the gate driving sub-circuits 722 in a one-to-one manner, and the gate driving sub-circuits 722 are configured to provide the second bias voltage V2 to the corresponding column control sub-circuits 81 according to their own gate states. For example, it may be set that when the gate driving sub-circuit 722 is gated, the gate driving sub-circuit 722 supplies the second bias voltage V2 to the corresponding column control sub-circuit 81; when the gate driving sub-circuit 722 is not gated, the gate driving sub-circuit 722 stops supplying the second bias voltage V2 to the corresponding column control sub-circuit 81.

The column-level analog front-end circuit 801 includes an effective pixel RS and a blind pixel RD, the column control sub-circuit is configured to generate a first current I1 according to a first bias voltage V1 and the blind pixel RD, generate a second current I2 according to a second bias voltage V2 and the effective pixel RS, perform transimpedance amplification on a difference between the first current I1 and the second current I2, and output the amplified difference, where the row-level mirror image pixel Rsm and the effective pixel RS have the same temperature drift amount at the same ambient temperature.

Illustratively, the row-level image elements Rsm are thermally insulated from the CMOS measurement circuitry 100 and are shaded, and the row-level image elements Rsm are subjected to a fixed radiation from a shade having a temperature that is constantly equal to the substrate temperature. The absorption plate of the effective pixel RS is thermally insulated from the CMOS measurement circuitry 100, and the effective pixel RS receives external radiation. The absorbing plates of the row-level mirror image elements Rsm and the effective elements RS are thermally insulated from the CMOS measurement circuitry 100, and thus both the row-level mirror image elements Rsm and the effective elements RS have a self-heating effect.

When the row selection switch K1 is used for gating the corresponding row-level mirror image element Rsm, the resistance value of the row-level mirror image element Rsm and the resistance value of the effective pixel RS are changed due to joule heat, but when the row-level mirror image element Rsm and the effective pixel RS are subjected to the same fixed radiation, the resistance value of the row-level mirror image element Rsm and the resistance value of the effective pixel RS are the same, the temperature coefficients of the row-level mirror image element Rsm and the temperature coefficient of the effective pixel RS are the same, the temperature drift amounts of the row-level mirror image element Rsm and the effective pixel RS are the same under the same environmental temperature, the change of the row-level mirror image element Rsm and the effective pixel RS are synchronous, the resistance value change of the row-level mirror image element Rsm and the effective pixel RS under the same environmental temperature is favorably compensated, and the stable output of the reading circuit is realized.

In addition, by arranging the second bias generating circuit 701 to include a bias control sub-circuit 721 and a plurality of gate driving sub-circuits 722, the bias control sub-circuit 721 is configured to control the gate driving sub-circuits 722 to generate corresponding second bias voltages V2 respectively according to the row control signal, so that each row of pixels has one path to drive the entire columns of pixels in the row separately, the requirement for the second bias voltages V2 is reduced, that is, the driving capability of the bias generating circuit 701 is improved, and the readout circuit is advantageously used to drive a larger-scale infrared detector pixel array. In addition, the specific details of the CMOS measurement circuitry 100 are well known to those skilled in the art and will not be described herein.

In addition, referring to fig. 14, the CMOS infrared sensing structure 200 is prepared on the same layer as the metal interconnection layer of the CMOS measurement circuitry 100, that is, the CMOS measurement circuitry 100 and the CMOS infrared sensing structure 200 are arranged on the same layer, the CMOS infrared sensing structure 200 is arranged on one side of the CMOS measurement circuitry 100, and the top of the CMOS measurement circuitry 100 may also be provided with a hermetic release isolation layer 40 to protect the CMOS measurement circuitry 100.

Alternatively, the infrared detector may be configured based on a 3nm, 7nm, 10nm, 14nm, 22nm, 28nm, 32nm, 45nm, 65nm, 90nm, 130nm, 150nm, 180nm, 250nm or 350nm CMOS process, which characterizes process nodes of the integrated circuit, i.e., features during the processing of the integrated circuit.

Alternatively, the metal wiring material constituting the metal interconnection layer in the infrared detector may be configured to include at least one of aluminum, copper, tungsten, titanium, nickel, chromium, platinum, silver, ruthenium, or cobalt, and for example, the material constituting the reflective layer may be configured to include at least one of aluminum, copper, tungsten, titanium, nickel, chromium, platinum, silver, ruthenium, or cobalt. In addition, the CMOS measurement circuit system 100 and the CMOS infrared sensing structure 200 are both prepared by using a CMOS process, the CMOS infrared sensing structure 200 is directly prepared on the CMOS measurement circuit system 100, the radial side length of the columnar structure 30 is more than or equal to 0.5um and less than or equal to 3um, the width of the beam structure, namely the width of a single line in the beam structure is less than or equal to 0.3um, the height of a resonant cavity is more than or equal to 1.5um and less than or equal to 2.5um, and the side length of a single pixel of the CMOS infrared sensing structure 200 is more than or equal to 6um and less than or equal to 17um.

Optionally, on the basis of the above embodiment, an infrared detector is further provided in the embodiment of the present invention, and fig. 15 is a schematic perspective view of an infrared detector provided in the embodiment of the present disclosure. As shown in fig. 15, the infrared detector includes a plurality of infrared detector pixels 01 according to the above embodiments arranged in an array, and therefore, the infrared detector provided in the embodiment of the present disclosure has the beneficial effects described in the above embodiments, which are not described herein again. Illustratively, the type of the infrared detector may be an amorphous silicon detector, a titanium oxide detector, a vanadium oxide detector, a titanium vanadium oxide detector, or the like, that is, the material constituting the thermosensitive layer may include at least one of amorphous silicon, titanium oxide, vanadium oxide, or titanium vanadium oxide, and the specific type of the infrared detector is not limited in the embodiments of the present invention.

Optionally, on the basis of the above embodiment, fig. 16 is a schematic perspective view of another infrared detector provided in the embodiment of the present invention, and as shown in fig. 16, at least some of the reflective plates of adjacent infrared detector pixels 01 are in contact with each other.

Fig. 17 is a schematic perspective view of an infrared detector in the prior art, as shown in fig. 17, in the prior art, a reflective plate 11 of an infrared detector pixel 01A and a reflective plate 11 of an infrared detector pixel 01B are respectively and independently disposed, in this application, reflective plates of at least some adjacent infrared detector pixels 01 are in contact with each other, as shown in fig. 16, reflective plate 11 of infrared detector pixel 01A and reflective plate 11 of infrared detector pixel 01B are in contact with each other, and reflective plates 11 of at least some adjacent infrared detector pixels 01 are in contact with each other, so that the area of metal reflective plate 11 can be further increased, the area of reflective plate 11 is maximized, the resonant cavity reflection effect is improved, the absorption rate of an absorption plate is improved, and the performance of the detector is improved. For example, the reflective plates in the plurality of infrared detector pixels shown in fig. 14 may be integrally formed, and the different infrared detector pixels may be formed by cutting.

It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising one of 8230; \8230;" 8230; "does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element.

The foregoing are merely exemplary embodiments of the present disclosure, which enable those skilled in the art to understand or practice the present disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An infrared detector pixel based on CMOS technology, comprising:

the CMOS infrared sensing structure comprises a CMOS measuring circuit system and a CMOS infrared sensing structure, wherein the CMOS measuring circuit system and the CMOS infrared sensing structure are both prepared by using a CMOS process, and the CMOS infrared sensing structure is directly prepared on the CMOS measuring circuit system;

the CMOS measurement circuit system comprises at least one layer of closed release isolation layer above the CMOS measurement circuit system, wherein the closed release isolation layer is used for protecting the CMOS measurement circuit system from being influenced by a process in the etching process of manufacturing the CMOS infrared sensing structure, and the at least one layer of closed release isolation layer is positioned in the CMOS infrared sensing structure;

the CMOS manufacturing process of the CMOS infrared sensing structure comprises a metal interconnection process, a through hole process and an RDL (remote data link) process, wherein the CMOS infrared sensing structure comprises at least two metal interconnection layers, at least two dielectric layers and a plurality of interconnection through holes;

the infrared conversion structure comprises an absorption plate and a plurality of beam structures, wherein the absorption plate is used for converting an infrared signal into an electric signal and is electrically connected with the corresponding columnar structure through the corresponding beam structure, the airtight release isolation layer in the CMOS infrared sensing structure is etched in an orthographic projection area of the absorption plate and is parallel to the plane of the reflection plate, the airtight release isolation layer which is not etched surrounds and covers the columnar structure, and the airtight release isolation layer is used as a support of the columnar structure to reduce the contact resistance of the columnar structure and the external environment;

the reflection plate is electrically contacted with the grounded supporting base and is integrally formed.

2. The infrared detector pixel as recited in claim 1, wherein the material forming the hermetic release barrier in the CMOS infrared sensing structure comprises at least one of silicon, germanium, silicon germanium, amorphous carbon, silicon carbide, aluminum oxide, or silicon nitride, and the thickness of the hermetic release barrier in the CMOS infrared sensing structure is equal to or greater than 100A and equal to or less than 2000A.

3. An infrared detector pixel as recited in claim 1 or 2, further comprising:

4. The infrared detector pixel of claim 3, wherein a material comprising the second dielectric layer comprises at least one of silicon, germanium, silicon germanium, amorphous carbon, silicon carbide, or aluminum oxide.

5. The infrared detector pixel of claim 1, further comprising:

6. An infrared detector pixel as recited in claim 1, wherein the pillar structures include a plurality of independent pillar structures disposed on different layers, the independent pillar structures being disposed in correspondence with one or more of the hermetic release barrier layers disposed in the CMOS infrared sensing structure.

7. The infrared detector pixel of claim 1, wherein a material forming a sacrificial layer between the reflective layer and the infrared conversion structure comprises silicon oxide, the sacrificial layer is configured to form a hollowed-out structure for the CMOS infrared sensing structure, and the sacrificial layer is etched using a post-CMOS process that etches the sacrificial layer using at least one of gaseous hydrogen fluoride, carbon tetrafluoride, and trifluoromethane.

8. An infrared detector based on a CMOS process, characterized by comprising a plurality of infrared detector pixels based on a CMOS process according to any one of claims 1 to 7.

9. The infrared detector of claim 8, characterized in that the reflective plates of at least some adjacent infrared detector pixels are in contact with each other.