CN113707582A - Chip transfer system, chip transfer method and chip transfer module - Google Patents
Chip transfer system, chip transfer method and chip transfer module Download PDFInfo
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- CN113707582A CN113707582A CN202010670052.5A CN202010670052A CN113707582A CN 113707582 A CN113707582 A CN 113707582A CN 202010670052 A CN202010670052 A CN 202010670052A CN 113707582 A CN113707582 A CN 113707582A
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 111
- 239000004020 conductor Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 19
- 239000000853 adhesive Substances 0.000 claims description 16
- 230000001070 adhesive effect Effects 0.000 claims description 16
- 238000003466 welding Methods 0.000 claims 6
- 239000010410 layer Substances 0.000 description 70
- 230000008901 benefit Effects 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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Abstract
The invention discloses a chip transfer system, a chip transfer method and a chip transfer module. The chip transfer system includes: a chip carrying device and an ultrasonic wave generating device. The chip transfer module comprises a suction nozzle device and an ultrasonic wave generating device. The chip bearing device comprises a chip bearing structure and a chip adhesion layer arranged on a first surface of the chip bearing structure. The ultrasonic wave generating device comprises an ultrasonic wave contact head movably contacting a second surface of the chip carrying structure. Therefore, when a plurality of chips are adhered to the chip adhesion layer, each chip can be separated from the adhesion of the chip adhesion layer and transferred to a circuit substrate or a non-circuit substrate through ultrasonic vibration generated by the ultrasonic contact head.
Description
Technical Field
The present invention relates to a transfer system, a transfer method and a transfer apparatus, and more particularly, to a chip transfer system, a chip transfer method and a chip transfer module.
Background
In the prior art, a chip can be transferred from one carrier to another carrier by taking and placing actions of a suction nozzle or pushing actions of a thimble.
Disclosure of Invention
The present invention provides a chip transfer system, a chip transfer method and a chip transfer module, which are directed to overcome the disadvantages of the prior art.
In order to solve the above technical problem, one of the technical solutions adopted by the present invention is to provide a chip transfer system, which includes: a chip carrying device and an ultrasonic wave generating device. The chip bearing device comprises a chip bearing structure and a chip adhesion layer arranged on a first surface of the chip bearing structure. The ultrasonic wave generating device comprises an ultrasonic wave contact head movably contacting a second surface of the chip carrying structure. The chips are adhered to the chip adhesion layer, and each chip is separated from the adhesion of the chip adhesion layer through ultrasonic vibration generated by the ultrasonic contact head and is transferred to a circuit substrate or a non-circuit substrate.
In order to solve the above technical problem, another technical solution adopted by the present invention is to provide a chip transfer method, including: the chip bearing device comprises a chip bearing structure and a chip adhesion layer arranged on a first surface of the chip bearing structure, wherein a plurality of chips are adhered on the chip adhesion layer; contacting a second surface of the chip carrying structure by an ultrasonic wave generating device, wherein the ultrasonic wave generating device comprises an ultrasonic wave contact head movably contacting the second surface of the chip carrying structure; and the chip is separated from the adhesion of the chip adhesion layer and is transferred to a circuit substrate or a non-circuit substrate through the ultrasonic vibration generated by the ultrasonic contact head.
In order to solve the above technical problem, another technical solution adopted by the present invention is to provide a chip transfer module, including: a suction nozzle device and an ultrasonic wave generating device. The suction nozzle device comprises a suction nozzle structure, and the suction nozzle structure comprises a first suction opening and a plurality of second suction openings surrounding the first suction opening. The ultrasonic wave generating device comprises an ultrasonic wave contact head which is movably arranged inside the suction nozzle structure. Wherein, a contact part of the ultrasonic contact head is movably arranged in the first air suction opening, and a chip is separated from the adhesion of a chip adhesion layer and transferred to a circuit substrate or a non-circuit substrate through the ultrasonic vibration generated by the ultrasonic contact head.
One of the benefits of the present invention is that the chip transfer system and the chip transfer module provided by the present invention can utilize the technical solutions of "the chip carrying device includes a chip carrying structure and a chip adhesion layer disposed on a first surface of the chip carrying structure" and "the ultrasonic wave generating device includes an ultrasonic wave contact head movably contacting a second surface of the chip carrying structure", so that when a plurality of chips are adhered to the chip adhesion layer, each chip can be separated from the adhesion of the chip adhesion layer and transferred to a circuit substrate or a non-circuit substrate through the ultrasonic wave vibration generated by the ultrasonic wave contact head.
Another advantage of the present invention is that the chip transferring method provided by the present invention can load a plurality of chips by "passing a chip carrying device, wherein the chip carrying device includes a chip carrying structure and a chip adhesion layer disposed on a first surface of the chip carrying structure, a plurality of chips are adhered on the chip adhesion layer" and "contacting a second surface of the chip carrying structure by an ultrasonic wave generating device", wherein the ultrasonic wave generating device includes an ultrasonic wave contact movably contacting the second surface of the chip carrying structure ", so that the chips can be separated from the adhesion of the chip adhesion layer by ultrasonic wave vibration generated by the ultrasonic wave contact and transferred to a circuit substrate or a non-circuit substrate.
Another advantage of the present invention is that the chip transfer module provided by the present invention can be transferred to a circuit substrate or a non-circuit substrate by the technical solutions that the suction nozzle device includes a suction nozzle structure, and the suction nozzle structure includes a first suction opening and a plurality of second suction openings surrounding the first suction opening, and the ultrasonic wave generating device includes an ultrasonic wave contact movably disposed inside the suction nozzle structure, so that when a contact portion of the ultrasonic wave contact is movably disposed in the first suction opening, a chip can be detached from an adhesion layer of a chip and transferred to the circuit substrate or the non-circuit substrate by ultrasonic wave vibration generated by the ultrasonic wave contact.
For a better understanding of the nature and technical content of the present invention, reference should be made to the following detailed description of the invention, taken in conjunction with the accompanying drawings, which are provided for purposes of illustration and description, and not for purposes of limitation.
Drawings
Fig. 1 is a flowchart of a chip transfer method provided in the present invention.
Fig. 2 is a first schematic diagram of a chip transfer system according to a first embodiment of the invention.
Fig. 3 is a second schematic diagram of a chip transfer system according to a first embodiment of the invention.
Fig. 4 is a first schematic top view of the chip of the present invention transferred to two adjacent conductive materials.
Fig. 5 is a second schematic top view of the chip of the present invention transferred to two adjacent conductive materials.
Fig. 6 is a first schematic view of a chip transfer system according to a second embodiment of the invention.
Fig. 7 is a second schematic view of a chip transfer system according to a second embodiment of the invention.
Fig. 8 is a schematic bottom cross-sectional view of a chip transfer module according to the present invention.
Fig. 9 is a first schematic view of a chip transfer system according to a third embodiment of the invention.
Fig. 10 is a second schematic view of a chip transfer system according to a third embodiment of the invention.
Fig. 11 is a first schematic view of a chip transfer system according to a fourth embodiment of the invention.
Fig. 12 is a second schematic view of a chip transfer system according to a fourth embodiment of the invention.
Detailed Description
The following description is provided for the embodiments of the chip transfer system, the chip transfer method and the chip transfer module disclosed in the present invention with specific embodiments, and those skilled in the art can understand the advantages and effects of the present invention from the disclosure of the present specification. The invention is capable of other and different embodiments and its several details are capable of modifications and variations in various respects, all without departing from the present invention. The drawings of the present invention are for illustrative purposes only and are not intended to be drawn to scale. The following embodiments will further explain the related art of the present invention in detail, but the disclosure is not intended to limit the scope of the present invention. In addition, the term "or" as used herein should be taken to include any one or combination of more of the associated listed items as the case may be.
Referring to fig. 1 to 12, the present invention provides a chip transfer system S, which includes: a chip carrying device 1 and an ultrasonic wave generating device 2. The chip carrier device 1 includes a chip carrier structure 10 and a chip adhesion layer 11 disposed on a first surface 1001 of the chip carrier structure 10. The ultrasonic wave generating device 2 includes an ultrasonic contact head 20 movably contacting a second surface 1002 of the chip carrying structure 10. Wherein, a plurality of chips C are adhered on the chip adhesion layer 11, and each chip C is separated from the adhesion of the chip adhesion layer 11 and transferred to a circuit substrate P or a non-circuit substrate N by the ultrasonic vibration generated by the ultrasonic contact head 20. For example, the chip C may be a light emitting diode chip or an IC chip, but the invention is not limited thereto.
Referring to fig. 1 to 12, the present invention provides a chip transfer method, which includes: a chip carrier 1 is used for carrying a plurality of chips C, wherein the chip carrier 1 includes a chip carrier structure 10 and a chip adhesion layer 11 disposed on a first surface 1001 of the chip carrier structure 10, and the plurality of chips C are adhered on the chip adhesion layer 11; contacting a second surface 1002 of the chip carrying structure 10 by an ultrasonic wave generating device 2, wherein the ultrasonic wave generating device 2 includes an ultrasonic contact head 20 movably contacting the second surface 1002 of the chip carrying structure 10; and, the chip C is separated from the chip adhesion layer 11 by the ultrasonic vibration generated by the ultrasonic contact head 20, and is transferred to a circuit substrate P or a non-circuit substrate N. For example, the chip C may be a light emitting diode chip or an IC chip, but the invention is not limited thereto.
Referring to fig. 1 to 12, the present invention provides a chip transfer module D, which includes: a suction nozzle device 3 and an ultrasonic wave generating device 2. The suction nozzle device 3 includes a suction nozzle structure 30, and the suction nozzle structure 30 includes a first suction opening 301 and a plurality of second suction openings 302 surrounding the first suction opening 301. The ultrasonic wave generating device 2 includes an ultrasonic contact 20 movably disposed inside the suction nozzle structure 30. Wherein, a contact part 200 of the ultrasonic contact head 20 is movably disposed in the first suction opening 301, and a chip C is separated from the adhesion of a chip adhesion layer 11 and transferred to a circuit substrate P or a non-circuit substrate N by the ultrasonic vibration generated by the ultrasonic contact head 20. For example, the chip C may be a light emitting diode chip or an IC chip, but the invention is not limited thereto.
[ first embodiment ]
Referring to fig. 2 and 3, a first embodiment of the invention provides a chip transfer system S, which includes: a chip carrying device 1 and an ultrasonic wave generating device 2.
More specifically, referring to fig. 2 or fig. 3, the chip carrier device 1 includes a chip carrier structure 10 and a die attach layer 11 disposed on a first surface 1001 of the chip carrier structure 10, and a plurality of chips C are adhered to the die attach layer 11. For example, the chip carrier structure 10 includes a carrier substrate 101 and a dielectric layer 102 disposed on a first surface of the carrier substrate 101, and the die attach layer 11 is disposed on a second surface of the carrier substrate 101. In addition, the carrier substrate 101 may be a flexible film, hard glass, or any insulating substrate, and the dielectric layer 102 may be a lubricating material (such as glycerin or any oil), or may be any kind of flexible material. However, the above description is only one embodiment of the present invention, and the present invention is not limited to the above-mentioned examples.
More specifically, as shown in fig. 2 or fig. 3, the ultrasonic generator 2 includes an ultrasonic contact 20 movably contacting a second surface 1002 of the chip-supporting structure 10, and each chip C can be detached from the die attach layer 11 and transferred to a circuit substrate P by ultrasonic vibration generated by the ultrasonic contact 20. For example, a contact portion 200 of the ultrasonic contact 20 movably (or vibratably) contacts the dielectric layer 102 of the chip-supporting structure 10, and the contact portion 200 of the ultrasonic contact 20 may just contact the surface of the dielectric layer 102 or be partially embedded in the dielectric layer 102, but the contact portion 200 of the ultrasonic contact 20 does not contact the supporting substrate 101, so as to prevent the ultrasonic contact 20 and the supporting substrate 101 from being damaged (abraded or scratched), and further reduce the loss of ultrasonic energy. However, the above description is only one embodiment of the present invention, and the present invention is not limited to the above-mentioned examples.
For example, as shown in fig. 2 and 3, since the chip carrier structure 10 and the circuit substrate P move simultaneously in a direction perpendicular to the ultrasonic contact 20 (as indicated by arrows in fig. 2 and 3) and relative to the contact 200 of the ultrasonic contact 20, the contact 200 of the ultrasonic contact 20 moves along the extending direction of the dielectric layer 102 of the chip carrier structure 10 (i.e., the contact 200 of the ultrasonic contact 20 moves along the direction opposite to the moving direction of the chip carrier structure 10). However, the above description is only one embodiment of the present invention, and the present invention is not limited to the above-mentioned examples.
For example, as shown in fig. 2 and fig. 3, each chip C has a first end C101 adhered to the die attach layer 11 and a second end C102 opposite to the first end C101, and the second end C102 of each chip C includes two chip pads C100 thereon. In addition, the circuit substrate P includes a plurality of conductive pads P100 and a plurality of conductive materials PM respectively disposed on the plurality of conductive pads P100. Thus, when the ultrasonic vibration is applied to the corresponding chip C by the contact portion 200 of the ultrasonic contact head 20, the corresponding chip C is separated from the adhesion of the chip adhesion layer 11 and is transferred onto the circuit substrate P. That is, each chip C can be detached from the die attach layer 11 and transferred to two adjacent conductive materials PM of the circuit substrate P by ultrasonic vibration generated by the ultrasonic contact head 20. It is noted that when each chip C is transferred onto two adjacent conductive materials PM of the circuit substrate P, the two chip pads C100 of each chip C respectively contact the two adjacent conductive materials PM, and the first end C101 of each chip C is exposed. However, the above description is only one embodiment of the present invention, and the present invention is not limited to the above-mentioned examples.
For example, if the chip C is temporarily deflected when being transferred onto two adjacent conductive materials PM (as shown in fig. 4) in combination with fig. 4 and fig. 5, the two adjacent conductive materials PM may be heated (by laser heating or baking in a tin furnace) first, so that the temporarily deflected chip C can be guided back by the surface tension provided by the melted two conductive materials PM (as shown in fig. 5). That is, the two chip pads C100 of the chip C can be conducted back by the surface tension provided by the melted two conductive materials PM (both the chip pads C100 and the conductive materials PM are metal and have mutually attractive functions), so that the two chip pads C100 can be completely covered by the two conductive materials PM, respectively. However, the above description is only one embodiment of the present invention, and the present invention is not limited to the above-mentioned examples.
More specifically, with reference to fig. 1 to 3, a first embodiment of the present invention provides a chip transfer method, which includes: firstly, a chip carrier 1 is used to carry a plurality of chips C, wherein the chip carrier 1 includes a chip carrier structure 10 and a chip adhesion layer 11 disposed on a first surface 1001 of the chip carrier structure 10, and the plurality of chips C are adhered on the chip adhesion layer 11 (step S100 (a)); then, the second surface 1002 of the chip carrying structure 10 is contacted by an ultrasonic wave generating device 2, wherein the ultrasonic wave generating device 2 includes an ultrasonic contact head 20 movably contacting the second surface 1002 of the chip carrying structure 10 (step S102); then, the chip C is separated from the die attach layer 11 by the ultrasonic vibration generated by the ultrasonic contact head 20, and transferred to a circuit substrate P (step S104 (a)).
[ second embodiment ]
Referring to fig. 6 to 8, a second embodiment of the invention provides a chip transfer system S and a chip transfer module D. The chip transfer system S includes a chip carrier 1, an ultrasonic generator 2 and a nozzle 3, and the chip transfer module D includes an ultrasonic generator 2 and a nozzle 3. As can be seen from a comparison between fig. 6 and fig. 2, and a comparison between fig. 7 and fig. 3, the greatest difference between the second embodiment of the present invention and the first embodiment is: in the second embodiment, the chip carrier structure 10 includes a flexible substrate 100, and the nozzle device 3 includes a nozzle structure 30 contacting (or sucking) the second surface 1002 of the chip carrier structure 10.
For example, referring to fig. 6 to 8, the nozzle structure 30 includes a first suction opening 301 and a plurality of second suction openings 302 surrounding the first suction opening 301, and the first suction opening 301 may be larger than, smaller than, or equal to the second suction openings 302. In addition, the size (e.g., aperture) of the first air suction opening 301 is larger or smaller than the size (e.g., diameter) of a contact portion 200 of the ultrasonic contact 20, so that the contact portion 200 of the ultrasonic contact 20 is movably (or vibratably) disposed in the first air suction opening 301 and movably (or vibratably) contacts the flexible substrate 100 of the chip carrying structure 10. However, the above description is only one embodiment of the present invention, and the present invention is not limited to the above-mentioned examples.
For example, as shown in fig. 6 and 7, since the chip carrier structure 10 and the circuit substrate P move simultaneously in a direction perpendicular to the ultrasonic contact 20 (as indicated by arrows in fig. 6 and 7) and relative to the contact 200 of the ultrasonic contact 20, the contact 200 of the ultrasonic contact 20 moves along a surface of the flexible substrate 100 of the chip carrier structure 10 (i.e., the contact 200 of the ultrasonic contact 20 moves in a direction opposite to the moving direction of the chip carrier structure 10). However, the above description is only one embodiment of the present invention, and the present invention is not limited to the above-mentioned examples.
More specifically, referring to fig. 1, fig. 6 and fig. 7, a second embodiment of the present invention provides a chip transfer method, which includes: firstly, a chip carrier 1 is contacted (sucked) by a suction nozzle device 3, and a plurality of chips C are carried by the chip carrier 1, wherein the chip carrier 1 includes a chip carrier structure 10 and a chip adhesion layer 11 disposed on a first surface 1001 of the chip carrier structure 10, and the plurality of chips C are adhered on the chip adhesion layer 11 (step S100 (B)); then, the second surface 1002 of the chip carrying structure 10 is contacted by an ultrasonic wave generating device 2, wherein the ultrasonic wave generating device 2 includes an ultrasonic contact head 20 movably contacting the second surface 1002 of the chip carrying structure 10 (step S102); then, the chip C is separated from the die attach layer 11 by the ultrasonic vibration generated by the ultrasonic contact head 20, and transferred to a circuit substrate P (step S104 (a)).
[ third embodiment ]
Referring to fig. 9 and 10, a third embodiment of the invention provides a chip transfer system S, which includes a chip carrier 1 and an ultrasonic generator 2. As can be seen from the comparison between fig. 9 and fig. 2, and the comparison between fig. 10 and fig. 3, the greatest difference between the third embodiment and the first embodiment of the present invention is: in the third embodiment, each chip C has a first end C101 adhered to the die attach layer 11 and a second end C102 opposite to the first end C101, and the first end C101 of each chip C includes two chip pads C100 thereon. In addition, the non-circuit substrate N includes an insulating substrate N11 and an adhesive material layer N12 disposed on the insulating substrate N11. Thus, when the ultrasonic vibration is applied to the corresponding chip C by the contact portion 200 of the ultrasonic contact head 20, the corresponding chip C is separated from the adhesion of the chip adhesion layer 11 and is transferred onto the non-circuit substrate N. That is, each chip C can be detached from the die attach layer 11 by ultrasonic vibration generated by the ultrasonic contact head 20 and transferred to the adhesive material layer N12 of the non-circuit substrate N. It is noted that when each chip C is transferred onto the adhesive layer N12 of the non-circuit substrate N, the second end C102 of each chip C is covered by the adhesive layer N12, and the two chip pads C100 of each chip C are exposed. In another possible embodiment, the two chip pads C100 of each chip C can also be disposed on the second end C102, so that when each chip C is transferred onto the adhesive material layer N12 of the non-circuit substrate N, the two chip pads C100 of each chip C are covered by the adhesive material layer N12. However, the above description is only one embodiment of the present invention, and the present invention is not limited to the above-mentioned examples.
More specifically, referring to fig. 1, 9 and 10, a third embodiment of the invention provides a chip transfer method, which includes: firstly, a chip carrier 1 is used to carry a plurality of chips C, wherein the chip carrier 1 includes a chip carrier structure 10 and a chip adhesion layer 11 disposed on a first surface 1001 of the chip carrier structure 10, and the plurality of chips C are adhered on the chip adhesion layer 11 (step S100 (a)); then, the second surface 1002 of the chip carrying structure 10 is contacted by an ultrasonic wave generating device 2, wherein the ultrasonic wave generating device 2 includes an ultrasonic contact head 20 movably contacting the second surface 1002 of the chip carrying structure 10 (step S102); then, the chip C is separated from the die attach layer 11 by the ultrasonic vibration generated by the ultrasonic contact head 20, and transferred to a non-circuit substrate N (step S104 (B)).
[ fourth embodiment ]
Referring to fig. 11 and 12, a fourth embodiment of the invention provides a chip transfer system S and a chip transfer module D. The chip transfer system S includes a chip carrier 1, an ultrasonic generator 2 and a nozzle 3, and the chip transfer module D includes an ultrasonic generator 2 and a nozzle 3. As can be seen from a comparison between fig. 11 and fig. 6, and a comparison between fig. 12 and fig. 7, the greatest difference between the fourth embodiment and the second embodiment of the present invention is: in the fourth embodiment, each chip C has a first end C101 adhered to the die attach layer 11 and a second end C102 opposite to the first end C101, and the first end C101 of each chip C includes two chip pads C100 thereon. In addition, the non-circuit substrate N includes an insulating substrate N11 and an adhesive material layer N12 disposed on the insulating substrate N11. Thus, when the ultrasonic vibration is applied to the corresponding chip C by the contact portion 200 of the ultrasonic contact head 20, the corresponding chip C is separated from the adhesion of the chip adhesion layer 11 and is transferred onto the non-circuit substrate N. That is, each chip C can be detached from the die attach layer 11 by ultrasonic vibration generated by the ultrasonic contact head 20 and transferred to the adhesive material layer N12 of the non-circuit substrate N. It is noted that when each chip C is transferred onto the adhesive layer N12 of the non-circuit substrate N, the second end C102 of each chip C is covered by the adhesive layer N12, and the two chip pads C100 of each chip C are exposed. In another possible embodiment, the two chip pads C100 of each chip C can also be disposed on the second end C102, so that when each chip C is transferred onto the adhesive material layer N12 of the non-circuit substrate N, the two chip pads C100 of each chip C are covered by the adhesive material layer N12. However, the above description is only one embodiment of the present invention, and the present invention is not limited to the above-mentioned examples.
More specifically, referring to fig. 1, fig. 11 and fig. 12, a fourth embodiment of the present invention provides a chip transfer method, which includes: firstly, a chip carrier 1 is contacted (sucked) by a suction nozzle device 3, and a plurality of chips C are carried by the chip carrier 1, wherein the chip carrier 1 includes a chip carrier structure 10 and a chip adhesion layer 11 disposed on a first surface 1001 of the chip carrier structure 10, and the plurality of chips C are adhered on the chip adhesion layer 11 (step S100 (B)); then, the second surface 1002 of the chip carrying structure 10 is contacted by an ultrasonic wave generating device 2, wherein the ultrasonic wave generating device 2 includes an ultrasonic contact head 20 movably contacting the second surface 1002 of the chip carrying structure 10 (step S102); then, the chip C is separated from the die attach layer 11 by the ultrasonic vibration generated by the ultrasonic contact head 20, and transferred to a non-circuit substrate N (step S104 (B)).
[ advantageous effects of the embodiments ]
One of the advantages of the present invention is that the chip transfer system S and the chip transfer module D provided by the present invention can utilize the technical solutions that the chip carrying device 1 includes a chip carrying structure 10 and a chip adhesion layer 11 disposed on a first surface 1001 of the chip carrying structure 10, and the ultrasonic wave generating device 2 includes an ultrasonic wave contact head 20 movably contacting a second surface 1002 of the chip carrying structure 10, so that when a plurality of chips C are adhered to the chip adhesion layer 11, each chip C can be separated from the adhesion of the chip adhesion layer 11 and transferred to a circuit substrate P or a non-circuit substrate N by ultrasonic wave vibration generated by the ultrasonic wave contact head 20.
Another advantage of the present invention is that the chip transferring method provided by the present invention can carry a plurality of chips C by "passing a chip carrying device 1, wherein the chip carrying device 1 includes a chip carrying structure 10 and a chip adhesion layer 11 disposed on a first surface 1001 of the chip carrying structure 10, a plurality of chips C are adhered on the chip adhesion layer 11" and "passing an ultrasonic wave generating device 2 to contact a second surface 1002 of the chip carrying structure 10", wherein the ultrasonic wave generating device 2 includes an ultrasonic wave contact 20 "movably contacting the second surface 1002 of the chip carrying structure 10, so that the chips C can be separated from the adhesion of the chip adhesion layer 11 and transferred to a circuit substrate P or a non-circuit substrate N by ultrasonic wave vibration generated by the ultrasonic wave contact 20.
Another advantage of the present invention is that the chip transfer module D provided by the present invention can be achieved by the technical solution that the nozzle structure 30 comprises a first suction opening 301 and a plurality of second suction openings 302 surrounding the first suction opening 301, and the ultrasonic wave generating device 2 comprises an ultrasonic contact 20 movably disposed inside the nozzle structure 30, so that when a contact portion 200 of the ultrasonic contact 20 is movably disposed in the first suction opening 301, a chip C can be detached from the adhesion of a chip adhesion layer 11 and transferred to a circuit substrate P or a non-circuit substrate N by ultrasonic vibration generated by the ultrasonic contact 20.
The disclosure is only a preferred embodiment of the invention and should not be taken as limiting the scope of the invention, so that the invention is not limited by the disclosure of the invention.
[ notation ] to show
S chip transfer system
D, chip transfer module
1: chip bearing device
10 chip bearing structure
1001 first surface
1002 second surface
100 flexible substrate
101 bearing substrate
102 dielectric layer
11 chip adhesion layer
2 ultrasonic wave generating device
20 ultrasonic contact
200 contact part
3 suction nozzle device
30 suction nozzle structure
301 first air intake opening
302 second suction opening
C is chip
C100 chip pad
C101 first end
C102 second terminal
P is a circuit board
P100 conductive pad
PM conductive material
N is not circuit substrate
N11 insulating substrate
N12 adhesive material layer.
Claims (10)
1. A chip transfer system, comprising:
the chip bearing device comprises a chip bearing structure and a chip adhesion layer arranged on a first surface of the chip bearing structure; and
an ultrasonic wave generating device, the ultrasonic wave generating device comprising an ultrasonic contact head movably contacting a second surface of the chip carrying structure;
the chips are adhered to the chip adhesion layer, and each chip is separated from the adhesion of the chip adhesion layer through ultrasonic vibration generated by the ultrasonic contact head and is transferred to a circuit substrate or a non-circuit substrate.
2. The chip transfer system of claim 1, further comprising: a nozzle arrangement comprising a nozzle structure contacting the second surface of the chip carrier structure, the nozzle structure comprising a first suction opening and a plurality of second suction openings surrounding the first suction opening, and the first suction opening being larger or smaller than the second suction openings; the chip bearing structure comprises a soft substrate, and one part of the soft substrate is adsorbed by the first air suction opening and the second air suction openings; wherein the ultrasonic contact head is movably disposed inside the suction nozzle structure, and a contact portion of the ultrasonic contact head is movably disposed in the first suction opening and movably contacts the flexible substrate of the chip carrying structure; wherein the chip carrying structure moves along a direction perpendicular to the ultrasonic contact head and relative to the contact portion of the ultrasonic contact head, so that the contact portion of the ultrasonic contact head moves along a surface of the flexible substrate of the chip carrying structure; the contact part of the ultrasonic contact head applies ultrasonic vibration to the corresponding chip, so that the corresponding chip is separated from the adhesion of the chip adhesion layer and is transferred to the circuit substrate or the non-circuit substrate.
3. The system of claim 1, wherein the die carrier structure comprises a carrier substrate and a dielectric layer disposed on a first surface of the carrier substrate, the die attach layer is disposed on a second surface of the carrier substrate, and a contact portion of the ultrasonic contact movably contacts the dielectric layer of the die carrier structure; wherein the chip carrying structure moves along a direction perpendicular to the ultrasonic contact and relative to the contact portion of the ultrasonic contact, so that the contact portion of the ultrasonic contact moves along an extending direction of the dielectric layer of the chip carrying structure; the contact part of the ultrasonic contact head applies ultrasonic vibration to the corresponding chip, so that the corresponding chip is separated from the adhesion of the chip adhesion layer and is transferred to the circuit substrate or the non-circuit substrate.
4. The chip transfer system of claim 1, wherein each of the chips has a first end attached to the chip attach layer and a second end opposite to the first end, and the second end of each of the chips includes two chip pads thereon; the circuit substrate comprises a plurality of conductive welding pads and a plurality of conductive materials respectively arranged on the plurality of conductive welding pads, and each chip is separated from the adhesion of the chip adhesion layer and transferred to two adjacent conductive materials of the circuit substrate through ultrasonic vibration generated by the ultrasonic contact head; when each chip is transferred to two adjacent conductive materials of the circuit substrate, the two chip welding pads of each chip respectively contact the two adjacent conductive materials, and the first end of each chip is exposed.
5. The chip transfer system of claim 1, wherein each of the chips has a first end attached to the chip attach layer and a second end opposite to the first end, and the first end of each of the chips includes two chip pads thereon; the non-circuit substrate comprises an insulating substrate and an adhesive material layer arranged on the insulating substrate, and each chip is separated from the adhesion of the chip adhesion layer through ultrasonic vibration generated by the ultrasonic contact head and is transferred to the adhesive material layer of the non-circuit substrate; when each chip is transferred to the adhesive material layer of the non-circuit substrate, the second end of each chip is covered by the adhesive material layer, and two chip bonding pads of each chip are exposed.
6. A chip transfer method, comprising:
the chip bearing device comprises a chip bearing structure and a chip adhesion layer arranged on a first surface of the chip bearing structure, wherein a plurality of chips are adhered on the chip adhesion layer;
contacting a second surface of the chip carrying structure by an ultrasonic wave generating device, wherein the ultrasonic wave generating device comprises an ultrasonic wave contact head movably contacting the second surface of the chip carrying structure; and
the chip is separated from the adhesion of the chip adhesion layer by ultrasonic vibration generated by the ultrasonic contact head and is transferred to a circuit substrate or a non-circuit substrate.
7. The chip transfer method according to claim 6, wherein in the step of carrying a plurality of the chips by the chip carrier, the chip transfer method further comprises: contacting the second surface of the chip bearing structure through a suction nozzle device; wherein the nozzle device comprises a nozzle structure contacting the second surface of the chip carrying structure, the nozzle structure comprises a first suction opening and a plurality of second suction openings surrounding the first suction opening, and the first suction opening is larger or smaller than the second suction openings; the chip bearing structure comprises a soft substrate, and one part of the soft substrate is adsorbed by the first air suction opening and the second air suction openings; wherein the ultrasonic contact head is movably disposed inside the suction nozzle structure, and a contact portion of the ultrasonic contact head is movably disposed in the first suction opening and movably contacts the flexible substrate of the chip carrying structure; wherein the chip carrying structure moves along a direction perpendicular to the ultrasonic contact head and relative to the contact portion of the ultrasonic contact head, so that the contact portion of the ultrasonic contact head moves along a surface of the flexible substrate of the chip carrying structure; the contact part of the ultrasonic contact head applies ultrasonic vibration to the corresponding chip, so that the corresponding chip is separated from the adhesion of the chip adhesion layer and is transferred to the circuit substrate or the non-circuit substrate.
8. The method of claim 6, wherein the chip carrier structure comprises a carrier substrate and a dielectric layer disposed on a first surface of the carrier substrate, the chip adhesion layer is disposed on a second surface of the carrier substrate, and a contact portion of the ultrasonic contact movably contacts the dielectric layer of the chip carrier structure; wherein the chip carrying structure moves along a direction perpendicular to the ultrasonic contact and relative to the contact portion of the ultrasonic contact, so that the contact portion of the ultrasonic contact moves along an extending direction of the dielectric layer of the chip carrying structure; the contact part of the ultrasonic contact head applies ultrasonic vibration to the corresponding chip, so that the corresponding chip is separated from the adhesion of the chip adhesion layer and is transferred to the circuit substrate or the non-circuit substrate.
9. The method of claim 6, wherein each of the chips has a first end attached to the die attach layer and a second end opposite to the first end, and each of the chips includes two chip pads on either the first end or the second end; the non-circuit substrate comprises an insulating substrate and an adhesive material layer arranged on the insulating substrate, wherein the circuit substrate comprises a plurality of conductive welding pads and a plurality of conductive materials respectively arranged on the conductive welding pads; each chip is separated from the adhesion of the chip adhesion layer through ultrasonic vibration generated by the ultrasonic contact head, and is transferred to two adjacent conductive materials of the circuit substrate or the adhesion material layer of the non-circuit substrate; when each chip is transferred to two adjacent conductive materials of the circuit substrate, the two chip welding pads of each chip respectively contact the two adjacent conductive materials, and the first end of each chip is exposed; when each chip is transferred to the adhesive material layer of the non-circuit substrate, the second end of each chip is covered by the adhesive material layer, and two chip bonding pads of each chip are exposed.
10. A chip transfer module, comprising:
a nozzle device comprising a nozzle structure including a first suction opening and a plurality of second suction openings surrounding the first suction opening; and
an ultrasonic wave generating device, wherein the ultrasonic wave generating device comprises an ultrasonic wave contact head movably arranged inside the suction nozzle structure;
wherein, a contact part of the ultrasonic contact head is movably arranged in the first air suction opening, and a chip is separated from the adhesion of a chip adhesion layer and transferred to a circuit substrate or a non-circuit substrate through the ultrasonic vibration generated by the ultrasonic contact head.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW109117170 | 2020-05-22 | ||
| TW109117170A TWI768349B (en) | 2020-05-22 | 2020-05-22 | Chip transfering system and chip tansfering module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113707582A true CN113707582A (en) | 2021-11-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010670052.5A Pending CN113707582A (en) | 2020-05-22 | 2020-07-13 | Chip transfer system, chip transfer method and chip transfer module |
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| Country | Link |
|---|---|
| CN (1) | CN113707582A (en) |
| TW (1) | TWI768349B (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW202145401A (en) | 2021-12-01 |
| TWI768349B (en) | 2022-06-21 |
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Application publication date: 20211126 |