CN113697761A - Resonant pressure sensitive chip probe of isolation packaging structure and packaging method thereof - Google Patents
Resonant pressure sensitive chip probe of isolation packaging structure and packaging method thereof Download PDFInfo
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- CN113697761A CN113697761A CN202110983367.XA CN202110983367A CN113697761A CN 113697761 A CN113697761 A CN 113697761A CN 202110983367 A CN202110983367 A CN 202110983367A CN 113697761 A CN113697761 A CN 113697761A
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- B81—MICROSTRUCTURAL TECHNOLOGY
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- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00325—Processes for packaging MEMS devices for reducing stress inside of the package structure
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0627—Protection against aggressive medium in general
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L27/00—Testing or calibrating of apparatus for measuring fluid pressure
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M3/00—Investigating fluid-tightness of structures
- G01M3/02—Investigating fluid-tightness of structures by using fluid or vacuum
- G01M3/26—Investigating fluid-tightness of structures by using fluid or vacuum by measuring rate of loss or gain of fluid, e.g. by pressure-responsive devices, by flow detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/025—Measuring very high resistances, e.g. isolation resistances, i.e. megohm-meters
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
A resonance pressure sensitive chip probe with an isolation packaging structure and a packaging method thereof relate to a probe and a packaging method thereof. The invention aims to solve the problems that the Q value of the conventional resonant pressure sensitive chip is low, and the measurement precision and the long-term stability of the packaging method are reduced. The Kovar alloy pin is arranged on the lead hole, the silicon resonance pressure sensitive chip is arranged on the chip bonding surface and is provided with a gap, and the silicon resonance pressure sensitive chip is connected with the Kovar alloy pin through an electrode bonding lead; the corrugated diaphragm is arranged on the contact surface of the corrugated diaphragm, the press ring is pressed on the corrugated diaphragm, and the isolation medium is filled in a closed cavity formed among the gap, the probe medium transmission channel, the corrugated diaphragm and the sealing pipe seat. The packaging method comprises the following steps: and carrying out secondary packaging on the resonance layer to enable the silicon resonance pressure sensitive chip to work in an isolation medium. The invention is used for measuring pressure and packaging the pressure chip probe.
Description
Technical Field
The invention relates to a resonant pressure sensitive chip probe and a packaging method thereof, in particular to a resonant pressure sensitive chip probe with an isolation packaging structure and a packaging method thereof, and belongs to the field of MEMS resonant pressure sensors.
Background
The silicon resonance pressure sensor indirectly measures pressure by measuring the natural frequency of silicon, the precision is 1-2 orders of magnitude higher than that of a common pressure sensor, the operation is reliable, and the stability and the repeatability are better. The traditional silicon resonance pressure transmission sensor realizes pressure measurement by directly contacting measured pressure, and is suitable for high-precision pressure measurement of clean gas; when the pressure environment to be measured is in the pressure measurement of highly corrosive liquid or gas environment (seawater, oil circuit, etc.), the traditional silicon resonance pressure sensor works in a corrosion state for a long time, which easily causes structural damage of the silicon resonance pressure probe and corrosion of the pressure chip, resulting in performance reduction or sensor failure.
Meanwhile, the core part of the silicon resonance pressure sensor is a resonator, the Q value is a core index for evaluating the resonator, and the performance of the resonator is better when the Q value is larger. The stable packaging environment can ensure that the resonator works with a fixed Q value, thereby ensuring that the silicon resonance pressure sensor has high stability. The leakage rate is an important parameter for the stability of the resonant pressure sensor chip. The most common pressure absolute pressure measurement die-sealed cavities are prepared by silicon-silicon bonding, silicon-glass bonding, and other crystalline material bonding.
The support beam of the conventional resonant pressure sensitive chip has low strength and rigidity, and the resonant frequency is low, so that the Q value of a core index is low, and the measurement precision and the application range of the chip are influenced. Meanwhile, the existing packaging method generally adopts the structure that the absolute pressure cavity is exposed in the atmospheric pressure range, so that the leakage rate of the high-precision absolute pressure sensor sealing cavity is increased, the pressure in the vacuum cavity is increased, the signal output value of the sensor chip is directly influenced, and the problem that the measurement precision and the long-term stability of the sensor chip are reduced is caused.
In summary, the conventional resonant pressure sensitive chip has the problems that the Q value is low and the measurement accuracy and the application range are affected, and the conventional packaging method has the problems that the measurement accuracy and the long-term stability are reduced.
Disclosure of Invention
The invention aims to solve the problems that the measurement precision and the application range of the conventional resonant pressure sensitive chip are influenced by the low Q value, and the measurement precision and the long-term stability of the conventional packaging method are reduced. Further provides a resonant pressure sensitive chip probe of an isolation packaging structure and a packaging method thereof.
The technical scheme of the invention is as follows: a resonant pressure sensitive chip probe of an isolation packaging structure comprises a compression ring, a corrugated diaphragm, a silicon resonant pressure sensitive chip, a Kovar alloy pin, an electrode bonding lead, a probe medium transfer channel, a sealing tube seat and an isolation medium, wherein the upper end surface of the sealing tube seat is a corrugated diaphragm contact surface, a stepped groove is formed in the corrugated diaphragm contact surface, the upper stepped surface of the stepped groove is a lead hole surface, the lower stepped surface of the stepped groove is a chip bonding surface, the probe medium transfer channel is formed in the chip bonding surface, a plurality of lead holes are vertically formed in the lead hole surface, and an annular sealing groove is formed in the middle upper part of the outer cylindrical surface of the sealing tube seat;
the Kovar alloy pin is vertically arranged on a lead hole of the sealing tube seat in a glass sintering mode, the silicon resonance pressure sensitive chip is arranged on a chip bonding surface of the sealing tube seat in an adhesive mode, a gap is reserved between the silicon resonance pressure sensitive chip and the side wall of the stepped groove, and the silicon resonance pressure sensitive chip and the Kovar alloy pin are connected through an electrode bonding lead; the corrugated diaphragm is arranged on the contact surface of the corrugated diaphragm, the press ring is pressed on the corrugated diaphragm, and the isolation medium is filled in a closed cavity formed among the gap, the probe medium transmission channel, the corrugated diaphragm and the sealing pipe seat.
The invention also provides a packaging method, which comprises the following steps:
the method comprises the following steps: manufacturing and cleaning a sealing pipe seat;
sintering a lead hole and upper and lower pins in a sealing tube seat together by using glass slurry to form a sealing pin structure, wherein the sealing tube seat is made of stainless steel;
respectively clamping the silk fabric cleaning sealing tube seat stuck with acetone and absolute ethyl alcohol by using stainless steel tweezers with heads coated with polytetrafluoroethylene, cleaning the silk fabric cleaning sealing tube seat by using absolute ethyl alcohol for more than 20s, and drying the silk fabric cleaning sealing tube seat in a drying oven; sequentially putting the silicon resonance pressure sensitive chip into acetone and absolute ethyl alcohol, respectively carrying out ultrasonic cleaning on the sealing tube seat and the silicon resonance pressure sensitive chip for 15min, and sequentially putting the special fixture ceramic ring into acetone and absolute ethyl alcohol for ultrasonic cleaning for 15 +/-3 min;
step two: gluing and bonding;
fixing a sealing tube seat on a clamp, uniformly dotting 6 points on the sealing tube seat according to the shape of a silicon resonance pressure sensitive chip by using a toothpick 730 adhesive or using an automatic dispenser, then embedding the silicon resonance pressure sensitive chip into the adhesive, pressing the upper part of a chip upper cover of the silicon resonance pressure sensitive chip by using a ceramic rod to ensure that an external pressure hole on the sealing tube seat corresponds to a pressure sensing through hole of a stress isolation layer, then continuously picking 730 adhesive by using the toothpick or using the automatic dispenser for dispensing, enabling a kovar alloy pin to correspond to a through hole of a special clamp ceramic ring, protecting the kovar alloy pin, and taking out the ceramic ring after the adhesive is coated;
step three: curing the glue;
curing the sealing tube seat bonded with the silicon resonance pressure sensitive chip in the second step in a constant temperature and humidity environment for 20-30 hours;
step four: pressure welding of the electrode bonding lead;
step four, firstly: fixing the sealing tube seat on a clamp, and welding an electrode bonding lead and an extraction electrode together at the position of the distance from the tip of a cleaver to the diameter of the electrode bonding lead on the surface of the extraction electrode, which is 2.5 times of the diameter of the electrode bonding lead;
step four and step two: welding the other end of the electrode bonding lead on the kovar alloy pin by a hot welding pen, wherein the length of the electrode bonding lead is automatically formed when two points are pressure-welded;
step four and step three: carrying out a breaking force test on the electrode bonding lead until the breaking force meets the design requirement;
step five: performing insulation test on the kovar alloy pin and the sealing tube seat;
testing the insulation resistance between each pin of the kovar alloy pin and the sealing tube seat by using an insulation resistance tester, wherein the resistance is greater than a design limit value;
step six: testing the basic performance of the silicon resonance pressure sensitive chip;
the water absorption ball is adopted to blow and lead the pressure hole, the pressure change is less than hundreds of hertz, and the temperature frequency is not changed; at the moment, the silicon resonance pressure sensitive chip meets the design requirement;
step seven: welding the pressure ring and the corrugated diaphragm on the sealing pipe seat;
fixing a sealing pipe seat on a clamp, placing a corrugated diaphragm on the contact surface of the corrugated diaphragm, placing a pressure ring on the corrugated diaphragm, then welding by using argon arc welding or electron beams, and then carrying out a penetration test; repeating the step five;
step eight: injecting oil into a closed cavity in the sealing pipe seat to seal the oil;
step eight one: the BYS-II type double-chamber liquid sealing device is adopted to inject the isolating medium into the closed cavity in the sealed tube seat, and the vacuum degree is less than 10-9Pa, the isolation medium is inert organic liquid;
step eight two: sealing a medium injection hole with the thickness of 1.3mm by using a phi 2 steel ball, and then sealing and welding the medium injection hole filled with an isolation medium by adopting energy storage welding;
thus, the packaging of the resonant pressure sensitive chip probe of the isolation packaging structure is completed;
step nine: electrically testing the resonance pressure sensitive chip probe of the packaged isolation packaging structure;
the electrical test is carried out under the constant normal pressure condition, and when the resonance pressure sensitive chip probe does not generate the frequency hopping phenomenon and the frequency changes towards one direction, the resonance pressure sensitive chip probe is stable and qualified within the time of less than 3 seconds;
step ten: carrying out pressure fatigue and aging tests on the resonant pressure sensitive chip probe of the packaged isolation packaging structure;
the resonance pressure sensitive chip probe is arranged on a clamp and is connected with an air pressure fatigue machine or a hydraulic fatigue machine, the fatigue times are 5000/10000 times, and the resonance pressure sensitive chip probe is placed in a high-low temperature test box for temperature aging tests to release the internal stress of the resonance pressure sensitive chip probe together, so that the output stability of the resonance pressure sensitive chip of the isolation packaging structure is improved;
step eleven: performing air tightness detection on a resonance pressure sensitive chip probe of the packaged isolation packaging structure;
connecting the resonance pressure sensitive chip probe with a pressure controller, and carrying out air tightness detection, wherein the pressure change value is not more than +/-2 Pa, and at the moment, the air tightness of the resonance pressure sensitive chip probe is qualified;
step twelve: and carrying out laser marking and screening on the resonance pressure sensitive chip probe of the packaged isolation packaging structure, and switching to the next production stage.
Compared with the prior art, the invention has the following effects:
1. the invention adopts the isolation packaging technology, the silicon resonance pressure chip is isolated from the external environment and completely works in the isolation medium, so that the resonance pressure sensitive chip probe can also realize the measurement of high-precision pressure in the severe environment, and the working reliability of the resonance pressure sensitive chip probe in the complex environment is improved; the silicon resonance pressure chip is packaged in a stable isolation medium and has a fixed Q value, and meanwhile, as the isolation medium does not enter the absolute pressure chamber, the resonance pressure sensitive chip probe has a very low leakage rate, and the long-term stability of the sensor is improved.
2. The invention provides a silicon resonance pressure sensitive chip probe, which is used for carrying out secondary packaging on a resonance layer (wherein the first packaging refers to that the resonance layer is arranged between an upper cover of a chip and a silicon-based substrate, and the second packaging refers to that the whole silicon resonance pressure sensitive chip is subjected to oil sealing), so that the silicon resonance pressure sensitive chip works in an isolation medium, high-precision pressure measurement in a corrosive environment is realized, and the reliability of the silicon resonance pressure sensitive chip probe in a severe environment is improved; meanwhile, the isolation medium does not enter the absolute pressure chamber, so that the silicon resonance pressure chip has a very low leakage rate, and the stability of the silicon resonance pressure sensor is improved.
3. The invention is based on the secondary isolation packaging of the chip probe, so that the silicon resonance pressure sensitive chip 3 realizes indirect pressure measurement in a severe environment through the deformation of the isolation medium 8 (the indirect pressure measurement refers to the indirect pressure measurement that the pressure is transmitted to the silicon resonance pressure sensitive chip 3 through the isolation medium and is not directly measured in a contact way); meanwhile, the isolation medium 8 cannot enter the resonant layer 302, so that the leakage rate of the silicon resonant pressure sensitive chip 3 can be effectively reduced.
4. According to the silicon resonance pressure sensitive probe prepared by the invention, the silicon resonance pressure sensitive chip 3 is packaged in the sealing tube seat 7 filled with the isolation medium 8, the isolation medium 8 completely wraps the silicon resonance pressure sensitive chip 3, and the outside of the silicon resonance pressure sensitive chip 3 is in a mechanical balance state, so that the connection pressure of the lower surface of the isolation layer of the stress isolation layer 303 and the chip bonding surface 702 of the sealing tube seat 7 is reduced, the packaging stress is effectively reduced, the strength of the sealing surface is increased, and the measurement range of the silicon resonance pressure sensitive probe is expanded; the invention changes the pressure sensing direction of the silicon resonance pressure sensitive probe, realizes front pressure sensing by back pressure sensing, and reduces the installation difficulty of the subsequent sensor.
Drawings
FIG. 1 is a full cross-sectional view of a silicon resonant pressure sensitive chip probe of the isolated packaging structure of the present invention;
FIG. 2 is a top view of a convoluted diaphragm; FIG. 3 is a front cross-sectional view of FIG. 2;
FIG. 4 is a front cross-sectional view of a silicon resonant pressure sensitive chip;
FIG. 5 is a front cross-sectional view of a kovar pin;
FIG. 6 is a top view of the probe media delivery channel;
fig. 7 is a front sectional view of the sealing stem 7;
fig. 8 is a top view of the resonant layer 302.
Detailed Description
The technical scheme of the invention is not limited to the specific embodiments listed below, and any reasonable combination of the specific embodiments is included.
The first embodiment is as follows: the present embodiment is described with reference to fig. 1 to 8, and the resonant pressure sensitive chip probe of the isolation package structure of the present embodiment includes a pressure ring 1, a corrugated diaphragm 2, a silicon resonant pressure sensitive chip 3, a kovar alloy pin 4, an electrode bonding lead 5, a probe medium transfer channel 6, a sealing tube seat 7 and an isolation medium 8, an upper end surface of the sealing tube seat 7 is a corrugated diaphragm contact surface 701, a stepped groove is formed on the corrugated diaphragm contact surface 701, an upper stepped surface of the stepped groove is a lead hole surface 704, a lower stepped surface is a chip bonding surface 702, the probe medium transfer channel 6 is formed on the chip bonding surface 702, a plurality of lead holes 703 are vertically formed on the lead hole surface 704, and an annular sealing groove 705 is formed in an upper middle cylindrical surface of the sealing tube seat 7; the Kovar alloy pin 4 is vertically arranged on a lead hole 703 of the sealing tube seat 7 in a glass sintering mode, the silicon resonance pressure sensitive chip 3 is arranged on a chip bonding surface 702 of the sealing tube seat 7 in an adhesive mode, a gap is reserved between the silicon resonance pressure sensitive chip 3 and the side wall of the stepped groove, and the silicon resonance pressure sensitive chip 3 and the Kovar alloy pin 4 are connected through an electrode bonding lead 5; the corrugated diaphragm 2 is arranged on the corrugated diaphragm contact surface 701, the press ring 1 is pressed on the corrugated diaphragm 2, and the isolation medium 8 is filled in a closed cavity formed among the gap, the probe medium transmission channel 6, the corrugated diaphragm 2 and the sealing pipe seat 7.
The second embodiment is as follows: the present embodiment is described with reference to fig. 4, the silicon resonant pressure sensitive chip 3 of the present embodiment includes a chip upper cover 301, a resonant layer 302, a silicon substrate 3021 and a stress isolation layer 303, the chip upper cover 301, the resonant layer 302, the silicon substrate 3021 and the stress isolation layer 303 are sequentially connected from top to bottom and are integrated into a whole, an inverted trapezoidal pressure sensing slot is formed on a lower end surface of the silicon substrate 3021, wherein an absolute pressure chamber is formed between the chip upper cover 301 and the silicon substrate 3021, and the resonant layer 302 is located in the absolute pressure chamber. So set up, the trapezoidal pressure sensing groove of falling of terminal surface is convenient for accurate perception medium pressure under silicon substrate 3021 to transmit to resonant layer 302, the dead pressure cavity that forms simultaneously between silicon substrate 3021 and the silicon substrate 3021 is used for protecting resonant layer 302, avoids the resistance of other media that resonant layer 302 received when being in operating condition, and then influences probe measurement accuracy. Other components and connections are the same as those in the first embodiment.
The third concrete implementation mode: referring to fig. 4, the stress isolation layer 303 of this embodiment has a pressure-sensitive via 3031 at the middle thereof. The arrangement is convenient for transmitting pressure to the silicon substrate 3021 and further to the resonant layer 302, thereby achieving the purpose of pressure sensing. Other components and connection relationships are the same as those in the first or second embodiment.
The fourth concrete implementation mode: referring to fig. 8, the present embodiment is described, the resonant layer 302 of the present embodiment includes four extraction electrodes 3022, two drive electrodes 3023, a spare electrode 3024, two sensitive comb-tooth electrodes 3025, two stabilizing beams 3026, two crossbeams 3027, an anchor block 3028, and an electrode via 3029, the two drive electrodes 3023 are disposed in parallel in the vertical direction, one extraction electrode 3022 is respectively mounted on each of the left and right sides of each drive electrode 3023, one sensitive comb-tooth electrode 3025 is mounted on the opposite side of each drive electrode 3023, one stabilizing beam 3026 is respectively mounted on the inner sides of each of the two sensitive comb-tooth electrodes 3025, one crossbeams 3027 is respectively mounted on the inner sides of each of the two stabilizing beams 3026, one anchor block 3028 is mounted between the two crossbeams 3027, and the anchor block 3028 and the spare electrode 3024 are connected by the electrode via the 3029. So set up, electrode path 3029 constitutes triangle-shaped stable structure, under the assurance signal transmission prerequisite, promotes the intensity that the electrode was propped admittedly, can effectively promote the stability on resonance layer to be applicable to the deformation range that vibration and pressure variation of higher frequency arouse. Meanwhile, the anchor block 3028 is arranged, so that the side length of the force arm is increased, the torque generated by the stress of the anchor block 3028 can be effectively improved, and the deformation of the rear end connected with the related stress beam is improved. Thereby improving the resonant frequency and increasing the resolution of the sensor. Other components and connection relations are the same as those of any one of the first to third embodiments.
The fifth concrete implementation mode: the present embodiment is described with reference to fig. 8, and the end portion of each tie beam 3027 of the present embodiment is a "Y" beam structure. So set up, "Y" type beam structure of two fixed fulcrums forms triangle-shaped stable structure, can promote rigidity intensity, improves the reliability of sensor. Other components and connection relations are the same as those of any one of the first to fourth embodiments.
The sixth specific implementation mode: describing the present embodiment with reference to fig. 8, each of the stabilizing beams 3026 of the present embodiment includes two stabilizing units that are bilaterally symmetric,
each stabilizing unit comprises a first connecting support beam 901, a first inclined-pulling beam parallel support beam 901-1, a first inclined-pulling beam vertical support beam 901-2, a first parallel support beam vertical beam 901-3, a first inclined-pulling beam stabilizing beam 901-4 and a second inclined-pulling beam stabilizing beam 901-5,
a trapezoid structure is formed among the first diagonal beam parallel support beam 901-1, the first diagonal beam stabilizing beam 901-4, the second diagonal beam stabilizing beam 901-5 and the sensitive comb electrodes 3025, the first diagonal beam vertical support beam 901-2 and the first parallel support beam vertical beam 901-3 are perpendicular to the first diagonal beam parallel support beam 901-1, and the first diagonal beam vertical support beam 901-2 and the first parallel support beam vertical beam 901-3, the first diagonal beam stabilizing beam 901-4, the second diagonal beam stabilizing beam 901-5 and the first diagonal beam parallel support beam 901-1 form a right triangle,
one end of the first connecting support beam 901 coincides with the intersection of the first diagonal beam vertical support beam 901-2 and the first diagonal beam parallel support beam 901-1, and the other end of the first connecting support beam 901 coincides with the intersection of the first parallel support beam vertical beam 901-3 and the second diagonal beam stabilizing beam 901-5. So set up, can form triangular supports structure, the intensity of each supporting beam of increase resonance layer and sensitive broach electrode 3025 draw to one side to increase mechanics vibration transmission intensity, improve chip vibration frequency, and then can effectively increase the measurement range, and reduced external disturbance, thereby promote stability. Other components and connection relations are the same as those of any one of the first to fifth embodiments.
The seventh embodiment: describing the present embodiment with reference to fig. 6, the probe medium delivery channel 6 of the present embodiment includes a medium groove 601 and a medium injection hole 602,
the medium tank 601 is a linear deep tank structure, the medium tank 601 includes a chip medium tank 6011, a first sidewall medium pressure guiding tank 6012 and a second sidewall medium pressure guiding tank 6013, the chip medium tank 6011 is arranged horizontally, the first sidewall medium pressure guiding tank 6012 and the second sidewall medium pressure guiding tank 6013 are arranged vertically, the first sidewall medium pressure guiding tank 6012 and the second sidewall medium pressure guiding tank 6013 are respectively connected with one end of the chip medium tank 6011 to form the medium tank 601, and the medium injection hole 602 is connected with the other end of the first sidewall medium pressure guiding tank 6012.
By the arrangement, the isolation medium 8 can be conveniently plugged, and meanwhile, when the isolation medium 8 is injected, the isolation medium 8 can effectively surround the silicon resonance pressure sensitive chip 3, so that the external medium pressure is accurately transmitted to the silicon resonance pressure sensitive chip 3, the leakage rate of the silicon resonance pressure sensitive chip 3 is reduced, and the silicon resonance pressure sensitive chip is effectively protected. Other components and connection relations are the same as those of any one of the first to sixth embodiments.
The specific implementation mode is eight: the present embodiment will be described with reference to fig. 1 to 8, and the packaging method of the present embodiment is characterized in that: it comprises the following steps:
the method comprises the following steps: manufacturing and cleaning a sealing pipe seat 7;
sintering a lead hole 703 and upper and lower pins in a sealing tube seat 7 together by using glass slurry to form a sealing pin structure, wherein the sealing tube seat 7 is made of stainless steel;
respectively clamping the silk fabric cleaning sealing tube seat 7 stuck with acetone and absolute ethyl alcohol by using stainless steel tweezers with heads coated with polytetrafluoroethylene, cleaning for more than 20s by using absolute ethyl alcohol, and drying in a drying oven; sequentially putting the silicon resonance pressure sensitive chip 3 into acetone and absolute ethyl alcohol, respectively carrying out ultrasonic cleaning on the sealing tube seat 7 and the silicon resonance pressure sensitive chip 3 for 15min, and sequentially putting the special fixture ceramic ring into acetone and absolute ethyl alcohol for ultrasonic cleaning for 15 +/-3 min;
step two: gluing and bonding;
fixing a sealing tube seat 7 on a clamp, uniformly dotting 6 points on the sealing tube seat 7 according to the shape of a silicon resonance pressure sensitive chip 3 by using a toothpick 730 adhesive or using an automatic dispenser, then embedding the silicon resonance pressure sensitive chip 3 therein, pressing the upper part of a chip upper cover 301 of the silicon resonance pressure sensitive chip 3 by using a ceramic rod, ensuring that an external pressure hole on the sealing tube seat 7 corresponds to a pressure sensing through hole 3031 of a stress isolation layer 303, then continuously picking 730 adhesive by using the toothpick or using the automatic dispenser for dispensing, enabling a kovar alloy pin 4 to correspond to a through hole of a special clamp ceramic ring, protecting the kovar alloy pin 4, and taking out the ceramic ring after the adhesive is coated;
step three: curing the glue;
curing the sealing tube seat 7 bonded with the silicon resonance pressure sensitive chip 3 in the step two in a constant temperature and humidity environment for 20-30 hours;
step four: pressure welding of the electrode bonding lead 5;
step four, firstly: fixing the sealing tube seat 7 on a clamp, and welding the electrode bonding lead 5 and the extraction electrode 3022 together at the position of the distance from the top of the riving knife to the surface of the extraction electrode 3022, wherein the diameter of the electrode bonding lead 5 is 2.5 times that of the extraction electrode 3022;
step four and step two: the other end of the electrode bonding lead 5 is welded on the kovar alloy pin 4 through a hot welding pen, and the length of the electrode bonding lead 5 is automatically formed when two points are welded;
step four and step three: performing a breaking force test on the electrode bonding lead 5 until the breaking force meets the design requirement;
step five: performing insulation test on the kovar alloy pin 4 and the sealing tube seat 7;
testing the insulation resistance between each pin of the kovar alloy pin 4 and the sealing tube seat 7 by using an insulation resistance tester, wherein the resistance is greater than a design limit value;
step six: testing the basic performance of the silicon resonance pressure sensitive chip 3;
the water absorption ball is adopted to blow and lead the pressure hole, the pressure change is less than hundreds of hertz, and the temperature frequency is not changed; at this time, the silicon resonance pressure sensitive chip 3 meets the design requirements;
step seven: welding the pressure ring 1 and the corrugated diaphragm 2 on the sealing pipe seat 7;
fixing a sealing tube seat 7 on a clamp, placing a corrugated diaphragm 2 on the corrugated diaphragm contact surface 701, placing a pressure ring 1 on the corrugated diaphragm 2, then welding by using argon arc welding or electron beams, and then carrying out a penetration test; repeating the step five;
step eight: injecting oil into a closed cavity in the sealing pipe seat 7 for oil sealing;
step eight one: the isolating medium 8 is injected into a closed cavity in the sealed tube seat 7 by adopting a BYS-II type double-chamber liquid sealing device, and the vacuum degree is less than 10-9Pa, the isolation medium 8 is inert organic liquid;
step eight two: sealing a 1.3mm medium injection hole 602 by using a phi 2 steel ball, and then sealing and welding the medium injection hole 602 filled with the isolation medium 8 by adopting energy storage welding;
thus, the packaging of the resonant pressure sensitive chip probe of the isolation packaging structure is completed;
step nine: electrically testing the resonance pressure sensitive chip probe of the packaged isolation packaging structure;
the electrical test is carried out under the constant normal pressure condition, and when the resonance pressure sensitive chip probe does not generate the frequency hopping phenomenon and the frequency changes towards one direction, the resonance pressure sensitive chip probe is stable and qualified within the time of less than 3 seconds;
step ten: carrying out pressure fatigue and aging tests on the resonant pressure sensitive chip probe of the packaged isolation packaging structure;
the resonance pressure sensitive chip probe is arranged on a clamp and is connected with an air pressure fatigue machine or a hydraulic fatigue machine, the fatigue times are 5000/10000 times, and the resonance pressure sensitive chip probe is placed in a high-low temperature test box for temperature aging tests to release the internal stress of the resonance pressure sensitive chip probe together, so that the output stability of the resonance pressure sensitive chip of the isolation packaging structure is improved;
step eleven: performing air tightness detection on a resonance pressure sensitive chip probe of the packaged isolation packaging structure;
connecting the resonance pressure sensitive chip probe with a pressure controller, and carrying out air tightness detection, wherein the pressure change value is not more than +/-2 Pa, and at the moment, the air tightness of the resonance pressure sensitive chip probe is qualified;
step twelve: and carrying out laser marking and screening on the resonance pressure sensitive chip probe of the packaged isolation packaging structure, and switching to the next production stage.
The working principle of the invention is as follows:
sealing the silicon resonance pressure sensitive chip 3 into a sealing tube seat 7 filled with an isolation medium 8, welding a lead electrode 3022 and a kovar alloy pin 4 through an electrode bonding lead 5, transmitting a sensor signal, and simultaneously ensuring the sealing property of the whole sealing tube seat 7 through the kovar alloy pin 4; when the surface of the corrugated diaphragm 2 is subjected to recoverable deformation caused by pressure, the volume of the isolation medium 8 is changed, and the special probe medium transmission channel 6 is designed to transmit the pressure change caused by the volume change to the silicon resonance pressure sensitive chip 3 to realize measurement.
Claims (8)
1. The utility model provides an keep apart packaging structure's sensitive chip probe of resonance pressure which characterized in that: it comprises a pressure ring (1), a corrugated diaphragm (2), a silicon resonance pressure sensitive chip (3), a kovar alloy pin (4), an electrode bonding lead (5), a probe medium transfer channel (6), a sealing tube seat (7) and an isolation medium (8),
the upper end face of the sealing tube seat (7) is a corrugated diaphragm contact face (701), a stepped groove is formed in the corrugated diaphragm contact face (701), the upper stepped face of the stepped groove is a lead hole face (704), the lower stepped face of the stepped groove is a chip bonding face (702), a probe medium transfer channel (6) is formed in the chip bonding face (702), a plurality of lead holes (703) are vertically formed in the lead hole face (704), and an annular sealing groove (705) is formed in the middle upper portion of the outer cylindrical face of the sealing tube seat (7);
the Kovar alloy pin (4) is vertically arranged on a lead hole (703) of the sealing tube seat (7) in a glass sintering mode, the silicon resonance pressure sensitive chip (3) is arranged on a chip bonding surface (702) of the sealing tube seat (7) in an adhesive mode, a gap is reserved between the silicon resonance pressure sensitive chip (3) and the side wall of the stepped groove, and the silicon resonance pressure sensitive chip (3) and the Kovar alloy pin (4) are connected through an electrode bonding lead (5); the corrugated diaphragm (2) is arranged on the corrugated diaphragm contact surface (701), the pressing ring (1) is pressed on the corrugated diaphragm (2), and the isolation medium (8) is filled in a closed cavity formed among the gap, the probe medium transfer channel (6), the corrugated diaphragm (2) and the sealing tube seat (7).
2. The resonant pressure sensitive chip probe of an isolation package as claimed in claim 1, wherein: silicon resonance pressure sensitive chip (3) include chip upper cover (301), resonance layer (302), silicon substrate (3021) and stress isolation layer (303), chip upper cover (301), resonance layer (302), silicon substrate (3021) and stress isolation layer (303) from top to bottom connect gradually and make an organic wholely, seted up down trapezoidal pressure-sensitive groove on the lower terminal surface of silicon substrate (3021), wherein, form between chip upper cover (301) and the silicon substrate (3021) and press the cavity absolutely, resonance layer (302) are located press the cavity absolutely.
3. The resonant pressure sensitive chip probe of an isolation package as claimed in claim 2, wherein: the middle part of the stress isolation layer (303) is provided with a pressure sensing through hole (3031).
4. The resonant pressure sensitive chip probe of isolation package structure of claim 3, wherein: the resonance layer (302) comprises four extraction electrodes (3022), two driving electrodes (3023), a spare electrode (3024), two sensitive comb-tooth electrodes (3025), two stabilizing beams (3026), two transverse tie beams (3027), an anchor block (3028) and an electrode path (3029),
two drive electrodes (3023) are arranged in parallel from top to bottom, a lead-out electrode (3022) is respectively installed on each of the left side and the right side of each drive electrode (3023), a sensitive comb-tooth electrode (3025) is installed on the opposite side of each drive electrode (3023), a stabilizing beam (3026) is respectively installed on the inner sides of each sensitive comb-tooth electrode (3025), a transverse tie beam (3027) is respectively installed on the inner sides of each stabilizing beam (3026), an anchor block (3028) is installed between each two transverse tie beams (3027), and the anchor block (3028) is connected with a spare electrode (3024) through an electrode passage (3029).
5. The resonant pressure sensitive chip probe of isolation package structure of claim 4, wherein: the end part of each transverse pulling beam (3027) is of a Y-shaped beam structure.
6. The resonant pressure sensitive chip probe of an isolation package structure of claim 5, wherein: each stabilizing beam (3026) comprises two stabilizing units which are symmetrical left and right,
each stabilizing unit comprises a first connecting support beam (901), a first inclined-pulling beam parallel support beam (901-1), a first inclined-pulling beam vertical support beam (901-2), a first parallel support beam vertical beam (901-3), a first inclined-pulling beam stabilizing beam (901-4) and a second inclined-pulling beam stabilizing beam (901-5),
a trapezoid structure is formed among the first inclined-pulling beam parallel supporting beam (901-1), the first inclined-pulling beam stabilizing beam (901-4), the second inclined-pulling beam stabilizing beam (901-5) and the sensitive comb electrode (3025), the first inclined-pulling beam vertical supporting beam (901-2) and the first parallel supporting beam vertical beam (901-3) are perpendicular to the first inclined-pulling beam parallel supporting beam (901-1), and a right-angled triangle is formed among the first inclined-pulling beam vertical supporting beam (901-2) and the first parallel supporting beam vertical beam (901-3), the first inclined-pulling beam stabilizing beam (901-4), the second inclined-pulling beam stabilizing beam (901-5) and the first inclined-pulling beam parallel supporting beam (901-1),
one end of the first connecting support beam (901) is superposed with the intersection of the first diagonal beam vertical support beam (901-2) and the first diagonal beam parallel support beam (901-1), and the other end of the first connecting support beam (901) is superposed with the intersection of the first parallel support beam vertical beam (901-3) and the second diagonal beam stabilizing beam (901-5).
7. The resonant pressure sensitive chip probe of an isolation package as claimed in claim 6, wherein: the probe medium transmission channel (6) comprises a medium groove (601) and a medium injection hole (602),
the medium groove (601) is of a linear deep groove structure, the medium groove (601) comprises a chip medium groove (6011), a first side wall medium pressure guiding groove (6012) and a second side wall medium pressure guiding groove (6013), the chip medium groove (6011) is horizontally arranged, the first side wall medium pressure guiding groove (6012) and the second side wall medium pressure guiding groove (6013) are vertically arranged, the first side wall medium pressure guiding groove (6012) and the second side wall medium pressure guiding groove (6013) are respectively connected with one end of the chip medium groove (6011) to form the medium groove (601), and a medium injection hole (602) is connected with the other end of the first side wall medium pressure guiding groove (6012).
8. A packaging method of a resonant pressure sensitive chip probe aiming at an isolation packaging structure of any one of claims 1 to 7, characterized in that: it comprises the following steps:
the method comprises the following steps: manufacturing and cleaning a sealing pipe seat (7);
sintering a lead hole (703) in a sealing tube seat (7) and an upper pin and a lower pin together by using glass slurry to form a sealing pin structure, wherein the sealing tube seat (7) is made of stainless steel;
respectively clamping silk fabrics adhered with acetone and absolute ethyl alcohol by using stainless steel tweezers with heads coated with polytetrafluoroethylene to clean a sealing tube seat (7), then cleaning the sealing tube seat for more than 20 seconds by using absolute ethyl alcohol, and putting the sealing tube seat into a drying oven for drying; sequentially putting the silicon resonance pressure sensitive chip (3) into acetone and absolute ethyl alcohol, respectively carrying out ultrasonic cleaning on the sealing tube seat (7) and the silicon resonance pressure sensitive chip (3) for 15min, and sequentially putting the special fixture ceramic ring into acetone and absolute ethyl alcohol for ultrasonic cleaning for 15 +/-3 min;
step two: gluing and bonding;
fixing a sealing tube seat (7) on a clamp, uniformly dispensing 6 points on the sealing tube seat (7) by using a toothpick 730 adhesive or using an automatic dispenser according to the shape of a silicon resonance pressure sensitive chip (3), then embedding the silicon resonance pressure sensitive chip (3) therein, pressing the upper part of a chip upper cover (301) of the silicon resonance pressure sensitive chip (3) by using a ceramic rod, ensuring that an external pressure hole on the sealing tube seat (7) corresponds to a pressure sensing through hole (3031) of a stress isolation layer (303), then continuously dispensing 730 adhesive or using an automatic dispenser, enabling a kovar alloy pin (4) to correspond to a through hole of a special clamp ceramic ring, protecting the kovar alloy pin (4), and taking out the ceramic ring after the adhesive is coated;
step three: curing the glue;
curing the sealing tube seat (7) bonded with the silicon resonance pressure sensitive chip (3) in the second step in a constant temperature and humidity environment for 20-30 hours;
step four: pressure welding of the electrode bonding lead (5);
step four, firstly: fixing the sealing tube seat (7) on a clamp, and welding the electrode bonding lead (5) and the lead-out electrode (3022) together at the position of the tip of the riving knife, which is 2.5 times of the diameter of the electrode bonding lead (5) from the surface of the lead-out electrode (3022);
step four and step two: the other end of the electrode bonding lead (5) is welded on the kovar alloy pin (4) through a hot welding pen, and the length of the electrode bonding lead (5) is automatically formed when two points are pressure-welded;
step four and step three: carrying out a breaking force test on the electrode bonding lead (5) until the breaking force meets the design requirement;
step five: performing insulation test on the kovar alloy pin (4) and the sealing tube seat (7);
testing the insulation resistance between each pin of the kovar alloy pin (4) and the sealing tube seat (7) by using an insulation resistance tester, wherein the resistance is greater than a design limit value;
step six: testing the basic performance of the silicon resonance pressure sensitive chip (3);
the water absorption ball is adopted to blow and lead the pressure hole, the pressure change is less than hundreds of hertz, and the temperature frequency is not changed; at the moment, the silicon resonance pressure sensitive chip (3) meets the design requirement;
step seven: welding the pressure ring (1) and the corrugated diaphragm (2) on the sealing pipe seat (7);
fixing a sealing pipe seat (7) on a clamp, placing a corrugated diaphragm (2) on the corrugated diaphragm contact surface (701), placing a pressure ring (1) on the corrugated diaphragm (2), then welding by using argon arc welding or electron beams, and then carrying out a penetration test; repeating the step five;
step eight: injecting oil into a closed cavity in the sealing pipe seat (7) for oil sealing;
step eight one: the isolating medium (8) is injected into a closed cavity in a sealed tube seat (7) by adopting a BYS-II type double-chamber liquid sealing device, and the vacuum degree is less than 10-9Pa, the isolation medium (8) is inert organic liquid;
step eight two: sealing a medium injection hole (602) with the diameter of 1.3mm by using a phi 2 steel ball, and then sealing and welding the medium injection hole (602) filled with the isolation medium (8) by adopting energy storage welding;
thus, the packaging of the resonant pressure sensitive chip probe of the isolation packaging structure is completed;
step nine: electrically testing the resonance pressure sensitive chip probe of the packaged isolation packaging structure;
the electrical test is carried out under the constant normal pressure condition, and when the resonance pressure sensitive chip probe does not generate the frequency hopping phenomenon and the frequency changes towards one direction, the resonance pressure sensitive chip probe is stable and qualified within the time of less than 3 seconds;
step ten: carrying out pressure fatigue and aging tests on the resonant pressure sensitive chip probe of the packaged isolation packaging structure;
the resonance pressure sensitive chip probe is arranged on a clamp and is connected with an air pressure fatigue machine or a hydraulic fatigue machine, the fatigue times are 5000/10000 times, and the resonance pressure sensitive chip probe is placed in a high-low temperature test box for temperature aging tests to release the internal stress of the resonance pressure sensitive chip probe together, so that the output stability of the resonance pressure sensitive chip of the isolation packaging structure is improved;
step eleven: performing air tightness detection on a resonance pressure sensitive chip probe of the packaged isolation packaging structure;
connecting the resonance pressure sensitive chip probe with a pressure controller, and carrying out air tightness detection, wherein the pressure change value is not more than +/-2 Pa, and at the moment, the air tightness of the resonance pressure sensitive chip probe is qualified;
step twelve: and carrying out laser marking and screening on the resonance pressure sensitive chip probe of the packaged isolation packaging structure, and switching to the next production stage.
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