CN113690196A - Super junction power MOSFET structure capable of being extended for multiple times and using method - Google Patents

Super junction power MOSFET structure capable of being extended for multiple times and using method Download PDF

Info

Publication number
CN113690196A
CN113690196A CN202110956734.7A CN202110956734A CN113690196A CN 113690196 A CN113690196 A CN 113690196A CN 202110956734 A CN202110956734 A CN 202110956734A CN 113690196 A CN113690196 A CN 113690196A
Authority
CN
China
Prior art keywords
heat
epitaxial layer
shaped
top end
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110956734.7A
Other languages
Chinese (zh)
Inventor
陈利
陈彬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xiamen Xinyidai Integrated Circuit Co ltd
Original Assignee
Xiamen Xinyidai Integrated Circuit Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xiamen Xinyidai Integrated Circuit Co ltd filed Critical Xiamen Xinyidai Integrated Circuit Co ltd
Priority to CN202110956734.7A priority Critical patent/CN113690196A/en
Publication of CN113690196A publication Critical patent/CN113690196A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • A—HUMAN NECESSITIES
    • A62—LIFE-SAVING; FIRE-FIGHTING
    • A62C—FIRE-FIGHTING
    • A62C3/00—Fire prevention, containment or extinguishing specially adapted for particular objects or places
    • A62C3/16—Fire prevention, containment or extinguishing specially adapted for particular objects or places in electrical installations, e.g. cableways
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET

Abstract

The invention discloses a super-junction power MOSFET structure capable of being subjected to multiple epitaxy and a using method thereof, and relates to the technical field of semiconductor field effect transistors, wherein the super-junction power MOSFET structure comprises an N-type substrate and a shell, the substrate is arranged in the shell, the top end of the N-type substrate is fixedly connected with a first epitaxial layer, the top end of the first epitaxial layer is fixedly connected with a second epitaxial layer, the top end of the first epitaxial layer is provided with two grooves in a chiseled mode, and the middle part of the second epitaxial layer is provided with two through grooves in a chiseled mode; according to the invention, the N-type substrate is arranged, the surface of the N-type substrate forms the first epitaxial layer by means of an epitaxial process, the top end of the first epitaxial layer is etched to form two grooves, the middle part of the surface of the second epitaxial layer forms the gate oxide layer, and the surface of the gate oxide layer forms the polysilicon gate, so that the double-layer epitaxy and even the multi-layer epitaxy can be designed, the breakdown voltage and the performance of the MOSFET can be greatly improved, ideal resistivity matching exists between the double layers or the multiple layers, and the interface characteristics of the overlapped multiple epitaxial layers can be improved.

Description

Super junction power MOSFET structure capable of being extended for multiple times and using method
Technical Field
The invention relates to the technical field of semiconductor field effect transistors, in particular to a super junction power MOSFET structure capable of being subjected to multiple epitaxy and a using method thereof.
Background
A Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is a Field Effect Transistor that can be widely used in analog circuits and digital circuits, and the name of the MOSFET is actually a wrong impression. Since the first letter M in a MOSFET, which represents "metal", is not present in most of the elements of the same type at present. Early MOSFET gates (gate electrode) used metal as their material, but with advances in semiconductor technology, the MOSFET gates were subsequently replaced with polysilicon. In processors where polysilicon gates have not been the dominant technology, starting with intel P1266 processors with 45 nm linewidths, the gates have begun to reuse metal, MOSFETs are conceptually known as "Insulated-Gate Field Effect transistors" (IGFETs), and the Gate insulation of IGFETs may be something other than the oxide layer used by MOSFETs. Some people prefer IGFETs to be used when referring to field effect transistor devices having polysilicon gates, but these IGFETs are most often referred to as MOSFETs.
According to the "super junction MOSFET structure" (patent No. CN201720346165.3) provided by chinese patent, there is described "S1: providing an N-type heavily doped substrate, forming an N-type lightly doped epitaxial layer on the N-type heavily doped substrate, etching the N-type lightly doped epitaxial layer to form a pair of cell region grooves and at least one terminal region groove, forming cell region P columns in the cell region grooves, and forming terminal region P columns in the terminal region grooves; s2: growing an oxidation insulation base layer on the N-type lightly doped epitaxial layer, forming a plurality of openings exposing the N-type lightly doped epitaxial layer in a hard mask layer positioned in the cell area by using a mask plate, and etching the oxidation insulation base layer of the cell area by using the mask plate as a shield to leave the oxidation insulation base layer of the terminal area; s3: forming a gate oxide layer on the surface of the N-type lightly doped epitaxial layer between the corresponding pair of cell region P columns, and forming a polysilicon gate S4 on the surface of the gate oxide layer: b implantation and diffusion are carried out on the upper part of the N type lightly doped epitaxial layer positioned in the cellular region, and a P type body region S5 is formed: forming an N-type body region contact region on the upper part of the N-type lightly doped epitaxial layer 202 in the cellular region; s6: carrying out growth thickening treatment on the oxidation insulation base layer of the terminal area to form an oxidation insulation layer of the terminal area; "then this solution still suffers the following drawbacks during use:
1. the super-junction MOSFET adopts a P-type body area and adopts self-aligned injection, the symmetry is higher than the symmetry of the traditional injection with a photomask, the thickness of a P column in a P cell area is improved, but the double epitaxy is formed into a single-layer epitaxial layer, the structure of the epitaxial layer cannot have ideal resistivity matching, so that the interface characteristics of two superposed epitaxial layers or a plurality of epitaxial layers cannot be realized, and the breakdown voltage and the performance of the device are improved only in a small range on the whole;
2. because the super-junction MOSFET device has a small, fine and light structure, when a circuit is not installed, the transportation environment of the super-junction MOSFET device easily affects the internal structure, particularly the extended electrode columns are easy to bend and generate scratches and the like, so that the parameters of internal resistance, conductivity and the like are affected, after the circuit is accessed subsequently, the three electrode columns of the super-junction MOSFET need to be connected with other devices, and the connection of the electrode columns is only needed, so that the connection part is easy to loosen, poor in contact and even separate and fall off under the influence of vibration of equipment circuits and the like in the subsequent long-term work;
3. although the existing super-junction MOSFET has less heat release, heat is inevitably accumulated in the super-junction MOSFET during long-term work, particularly in a high-temperature environment, if a heat dissipation structure which is attached with heat conduction is additionally arranged, the heat dissipation of the structure can be influenced by shielding the attachment structure during small-amount heat dissipation, the heat accumulation can be caused, and if a separated heat dissipation mechanism is used during large-amount heat release, the heat conduction efficiency is low, and quick cooling and heat dissipation cannot be realized;
4. super junction MOSFET is when unusual work, if appear being punctured, burn out when special and comparatively serious accident, because the housing is with external non-strict enclosed construction, the flue gas or the intensity of a fire that produce like this can stretch and transmit other positions of circuit, influence the holistic security of circuit.
Disclosure of Invention
The invention aims to solve the defects in the prior art, such as: the characteristics and the breakdown voltage performance cannot be integrally improved, the heat dissipation is shielded or poor, the shell is not sealed, the electrode column is easy to bend, and the super junction power MOSFET structure capable of extending for multiple times and the using method are provided.
In order to achieve the purpose, the invention adopts the following technical scheme:
a super-junction power MOSFET structure capable of being extended for multiple times and a using method thereof comprise an N-type substrate and a shell, wherein the N-type substrate is arranged inside the shell, the top end of the N-type substrate is fixedly connected with a first epitaxial layer, the top end of the first epitaxial layer is fixedly connected with a second epitaxial layer, two grooves are formed in the top end of the first epitaxial layer, two through grooves are formed in the middle of the second epitaxial layer, P columns are respectively filled in the grooves and the two through grooves, two body grooves are formed in the top end of the second epitaxial layer, a P-type body area is fixedly embedded in the two body grooves, two N-type body areas are fixedly embedded in the top end of the P-type body area, two S source electrodes are fixedly connected to the top ends of the N-type body areas, two D drain electrodes are fixedly connected to the top ends of the N-type body areas, and a gate oxide layer is fixedly connected to the middle of the top end of the second epitaxial layer, a polycrystalline silicon grid is fixedly arranged at the top end of the gate oxide layer, and a G grid is fixedly arranged at the top end of the polycrystalline silicon grid;
the middle part on shell top and the middle part of bottom all are equipped with cooling mechanism, the one end of shell is fixed to run through there are three electrode column, and is three the outside of electrode column is equipped with sealing mechanism, and is three a tip of electrode column all is equipped with protection drive mechanism.
Further, the S source electrode, the D drain electrode and the G grid electrode are electrically connected with the three electrode columns respectively, an insulating layer is fixedly arranged at the top end of the second epitaxial layer, four protective layers are fixedly embedded between the N type body regions and the two P type body regions respectively, and the insulating layers are silicon dioxide (SiO) insulating layers.
Further, cooling mechanism includes rectangle box, a plurality of elasticity box and a plurality of heat-conducting plate, the middle part on rectangle box and shell top or the middle part of bottom are fixed to be rabbeted, and are a plurality of elasticity box all fixes and rabbeted in the top of rectangle box, and is a plurality of the bottom inner wall of a plurality of elasticity boxes is fixed respectively to the heat-conducting plate, and is a plurality of the bottom of heat-conducting plate all is fixed to be alternate has a plurality of heat dissipation posts, and is a plurality of the bottom that runs through a plurality of elasticity boxes is all fixed at the middle part of heat dissipation post.
Further, the inside packing of rectangle box has the heat dissipation oil, and is a plurality of in the heat dissipation oil is all arranged in to the bottom of heat dissipation post, the inside of rectangle box is equipped with a plurality of inflation balls, and is a plurality of the equal fixed interlude in top of inflation ball is connected with the heat conduction needle, the fixed a plurality of heat conduction that are equipped with in top of rectangle box is a plurality of the top of heat conduction needle all fixed the top that runs through the rectangle box respectively with a plurality of heat conduction prop up the bottom fixed interlude of piece and be connected.
Further, sealing mechanism includes strip shaped plate, a plurality of heat conduction pole, three sealed wax stone, the fixed scarf joint of one end of strip shaped plate and shell, the middle part symmetry of strip shaped plate is opened and is dug there is three rectangular channel, and is three another tip of electrode post is equallyd divide the inside that does not run through three rectangular channel, and is three the inside of rectangular channel all is fixed and is equipped with a pair of U-shaped otter board.
Further, it is three the top inner wall of rectangular channel is respectively with the fixed scarf joint of three sealed wax stone, and is a plurality of the one end of heat conduction pole is all fixed the top of running through the bar plate openly and a lateral wall of three sealed wax stone in proper order, and is a plurality of the equal fixedly connected with L shape conducting strip of the other end of heat conduction pole.
Furthermore, protection drive mechanism includes three J-shaped protective sheath, three to elasticity pull rod and three connecting block, and is three a tip of three electrode post is located to J-shaped protective sheath movable sleeve respectively, and is three the bottom of connecting block respectively with one side fixed connection on three J-shaped protective sheath top, it is three the center department on connecting block top all fixes to inlay and is equipped with the welding point.
Furthermore, three pairs of elastic pull rods are respectively arranged on two sides of the three J-shaped protective sleeves, two side walls of the three J-shaped protective sleeves are fixedly connected with side columns, one end parts of the six side columns are respectively fixedly connected with one ends of the six elastic pull rods, and the other ends of the six elastic pull rods are fixedly connected with one end of the shell.
Further, a first epitaxial layer is formed on the N-type substrate, the top end of the first epitaxial layer is etched to form two grooves, P columns are formed in the grooves, a second epitaxial layer is synchronously formed on the first epitaxial layer, the P columns are formed in the through grooves again, body region grooves are etched in the top end of the second epitaxial layer, P-type body regions are formed in the two body region grooves, a protective layer is formed after the top ends of the two P-type body regions are etched to form grooves, As injection and diffusion are carried out in the protective layer, a gate oxide layer is formed in the middle of the surface of the second epitaxial layer, a polysilicon gate is formed on the surface of the gate oxide layer, a metal plate is arranged at the top end of the polysilicon gate, G gates are formed on the surface of the metal plate, S source electrodes are formed on the surfaces of the two N-type body regions, and D drain electrodes are formed on the surfaces of the other two N-type body regions, the bottom surface of the N-type substrate is electrically connected with the D drain electrode through a wiring.
Furthermore, the three J-shaped protective sleeves are sleeved at one end of the three electrode columns for protection, the three J-shaped protective sleeves can be detached and stretched, the three connecting blocks can be bonded with other devices or welded and fixed by means of three welding points, so that the elasticity of the three I-shaped protective sleeves can generate inward tightening force for protection, when the period structure in the shell releases heat, the plurality of heat conducting branch blocks transmit heat to the heat conducting needles, the plurality of heat conducting needles transmit heat to the plurality of expansion balls again, the plurality of expansion balls increase the hydraulic pressure of heat dissipation oil, the plurality of heat conducting plates are jacked up by the hydraulic pressure to rise and fully adhere to and conduct heat, when a large amount of heat is generated in the shell, the plurality of L-shaped heat conducting fins absorb the heat and transmit the heat to the sealing wax block by means of the plurality of heat conducting rods, and the sealing wax block is melted and flows to be filled between each pair of U-shaped screen plates, the realization is right the shell seals, cuts off heat and the continuation of the flame source and spreads, realizes isolated protection.
Compared with the prior art, the invention has the beneficial effects that:
(1) according to the invention, by arranging the N-type substrate, a first epitaxial layer is formed on the surface of the N-type substrate by means of an epitaxial process, etching is carried out on the top end of the first epitaxial layer to form two grooves, P columns are formed in the two grooves, a protective layer is formed after the grooves are etched, then As injection and diffusion are carried out in the protective layer, a gate oxide layer is formed in the middle of the surface of the second epitaxial layer, and a polycrystalline silicon grid is formed on the surface of the gate oxide layer, so that the double-layer epitaxy can be designed even As a multi-layer epitaxy, the breakdown voltage and the performance of the MOSFET can be greatly improved, ideal resistivity matching is realized between the double layers or the multiple layers, and the interface characteristics of the overlapped multiple epitaxial layers can be improved;
(2) the invention arranges a protective traction structure, which comprises a plurality of J-shaped protective sleeves, a plurality of elastic pull rods, a plurality of connecting blocks and welding points, the electrode column can be wrapped and protected by the J-shaped protective sleeve in the non-installation storage and transportation links, and is pulled to keep the electrode column in a straight state, the bending force applied to the electrode column is buffered, the bending and damage of the electrode column are avoided, meanwhile, after a subsequent circuit is accessed, one end parts of the J-shaped protective sleeves can be separated from the electrode column, then the J-shaped protective sleeves are stretched, one end parts of the J-shaped protective sleeves are bonded with other electric devices by virtue of a plurality of connecting blocks or are welded and fixed by virtue of welding points, therefore, the tightening force of the J-shaped protective sleeve exists between the device and other devices connected with the device, so that the connection of the electrode columns and other devices is more stable, the electrode columns are prevented from being separated or falling off in long-term vibration of equipment, and the connection strength between the electrode columns and other devices is enhanced;
(3) according to the invention, through the arranged cooling mechanism, the cooling mechanism comprises the rectangular box filled with the heat dissipation oil, the top end of the rectangular box is embedded with the plurality of elastic boxes, the heat conduction plates are fixedly arranged on the inner walls of the bottom ends of the plurality of elastic boxes, the heat dissipation mechanism can be separated from the device structure under the condition of no heat release, so that the normal work can be ensured without contact, the ventilation and the blocking reduction are improved, when heat is released, the hydraulic pressure of the heat dissipation oil is improved by virtue of the expanded expansion balls, the plurality of heat conduction plates are pushed out by virtue of the hydraulic pressure, so that the heat conduction plates are fully attached and contacted with the surface of the device, the specific heat capacity of the heat dissipation oil is large, the heat released by the device can be fully absorbed, a better cooling effect is achieved, after cooling, the hydraulic pressure is reduced after the expansion balls are restored to the original state, so that the plurality of heat conduction plates descend and are away from the device structure again;
(4) according to the invention, the sealing mechanism comprises a plurality of pairs of U-shaped screen plates and a plurality of sealing wax blocks arranged on the plurality of pairs of U-shaped screen plates, when a device is punctured and burnt, a large amount of generated heat is collected by a plurality of L-shaped heat conducting fins and then is transmitted by a plurality of heat conducting rods until the heat is transmitted to the sealing wax blocks embedded in the strip-shaped plates, and the sealing wax blocks are melted and flow down after receiving the heat, so that the sealing wax blocks are filled between each corresponding pair of U-shaped screen plates and the pores of the U-shaped screen plates are filled, therefore, the shell is completely sealed, air is blocked, and once the fire in the air is fired, the air cannot continuously spread to other parts of a circuit, so that isolation protection is realized, and once bad accidents such as damage, puncture and the like occur, sealing protection is instantly performed, the reaction is fast, the protection effect is good, and the occupied volume is small.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a cross-sectional view of a MOSFET structure of the present invention;
FIG. 2 is a cross-sectional view of a housing portion of the present invention;
FIG. 3 is a schematic diagram of the external structure of a MOSFET of the present invention;
FIG. 4 is a cross-sectional view of a rectangular box portion of the present invention;
fig. 5 is a schematic structural view of a sealing wax block portion of the present invention.
The list of components represented by the various reference numbers in the figures is as follows: 1. an N-type substrate; 2. a first epitaxial layer; 3. a second epitaxial layer; 4. a trench; 5. a through groove; 6. a P column; 7. a body region groove; 8. a P-type body region; 9. an N-type body region; 10. a protective layer; 11. an insulating layer; 12. a metal plate; 13. s source electrode; 14. g, grid electrode; 15. d, a drain electrode; 16. wiring; 17. a gate oxide layer; 18. a polysilicon gate; 19. a housing; 20. a rectangular box; 21. a heat conducting branch block; 22. an elastic case; 23. a heat conducting plate; 24. a strip plate; 25. a U-shaped mesh plate; 26. an electrode column; 27. a heat conducting rod; 28. an L-shaped heat-conducting fin; 29. a J-shaped protective sleeve; 30. a side post; 31. an elastic pull rod; 32. connecting blocks; 33. a welding point; 34. a heat conducting pin; 35. an expansion ball; 36. a heat-dissipating column; 37. heat dissipating oil; 38. and sealing the wax block.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
Referring to fig. 1-5, a super junction power MOSFET structure capable of multiple epitaxy comprises an N-type substrate 1 and a housing 19, wherein the N-type substrate 1 is arranged in the housing 19, the top end of the N-type substrate 1 is fixedly connected with a first epitaxial layer 2, the top end of the first epitaxial layer 2 is fixedly connected with a second epitaxial layer 3, the top end of the first epitaxial layer 2 is provided with two trenches 4, the middle part of the second epitaxial layer 3 is provided with two through grooves 5, the two trenches 4 are respectively filled with P pillars 6 with the interiors of the two through grooves 5, the top end of the second epitaxial layer 3 is provided with two body region grooves 7, thus, the double-layer epitaxy and even the multi-layer epitaxy can be designed, the breakdown voltage and the performance of the MOSFET can be greatly improved, ideal resistivity matching can be realized between double layers or multiple layers, the interface characteristics of the stacked multiple epitaxial layers can be improved, the P-type body regions 8 are fixedly embedded in the two body region grooves 7, the top ends of the two P-type body regions 8 are fixedly connected with two N-type body regions 9 in an embedded mode, the top ends of the two N-type body regions 9 are fixedly connected with S source electrodes 13, the top ends of the other two N-type body regions 9 are fixedly connected with D drain electrodes 15, the middle of the top end of the second epitaxial layer 3 is fixedly connected with a gate oxide layer 17, the top end of the gate oxide layer 17 is fixedly provided with a polycrystalline silicon grid electrode 18, and the top end of the polycrystalline silicon grid electrode 18 is fixedly provided with a G grid electrode 14;
the middle part of the top end and the middle part of the bottom end of the shell 19 are respectively provided with a cooling mechanism, one end of the shell 19 is fixedly penetrated with three electrode columns 26, the outer parts of the three electrode columns 26 are respectively provided with a sealing mechanism, one end parts of the three electrode columns 26 are respectively provided with a protective traction mechanism, an S source electrode 13, a D drain electrode 15 and a G grid electrode 14 are respectively and electrically connected with the three electrode columns 26, the top end of the second epitaxial layer 3 is fixedly provided with an insulating layer 11, a protective layer 10 is respectively and fixedly embedded between the four N-type body regions 9 and the two P-type body regions 8, and the insulating layer 11 is a silicon dioxide (SiO2) insulating layer;
the cooling mechanism comprises a rectangular box 20, a plurality of elastic boxes 22 and a plurality of heat conducting plates 23, the rectangular box 20 is fixedly embedded with the middle part of the top end or the middle part of the bottom end of the shell 19, the plurality of elastic boxes 22 are all fixedly embedded with the top end of the rectangular box 20, the plurality of heat conducting plates 23 are respectively fixedly arranged on the inner walls of the bottom ends of the plurality of elastic boxes 22, the bottom ends of the plurality of heat conducting plates 23 are all fixedly inserted with a plurality of radiating columns 36, the middle parts of the plurality of radiating columns 36 are all fixedly penetrated through the bottom ends of the plurality of elastic boxes 22, radiating oil 37 is filled in the rectangular box 20, the bottoms of the plurality of radiating columns 36 are all arranged in the radiating oil 37, a plurality of expansion balls 35 are arranged in the rectangular box 20, the expansion balls 35 are made of thermal expansion materials and are expanded when encountering heat and reset when encountering cold, so that the volume of the expansion balls 35 arranged in the radiating oil 37 is increased after being heated, the liquid pressure is increased, the top ends of the plurality of the expansion balls 35 are all fixedly penetrated and connected with heat conducting needles 34, the heat conducting needles 34, the heat conducting branch blocks 21 and the heat conducting rods 27 are all made of good heat conducting materials, can effectively sense temperature changes and can transfer heat, the top end of the rectangular box 20 is fixedly provided with the heat conducting branch blocks 21, and the tops of the heat conducting needles 34 fixedly penetrate through the top end of the rectangular box 20 and are fixedly and alternately connected with the bottom ends of the heat conducting branch blocks 21 respectively;
the sealing mechanism comprises an elongated plate 24, a plurality of heat conducting rods 27 and three sealing wax blocks 38, the elongated plate 24 is fixedly embedded with one end of the shell 19, three rectangular grooves are symmetrically formed in the middle of the elongated plate 24, the other ends of the three electrode posts 26 respectively penetrate through the three rectangular grooves, a pair of U-shaped screen plates 25 are fixedly arranged in the three rectangular grooves, air flow can be allowed to pass through the holes of the U-shaped screen plates 25 during normal use, relative ventilation of the shell 19 is kept, the U-shaped screen plates 25 can be made of refractory cotton and other materials, air impurities and dust can be filtered and absorbed while air flow is allowed to pass through, moisture and water in the shell 19 are prevented from entering, the inner walls of the top ends of the three rectangular grooves are respectively fixedly embedded with the three sealing wax blocks 38, one ends of the plurality of heat conducting rods 27 are sequentially and fixedly penetrate through the top of the front face of the elongated plate 24 and one side wall of the three sealing wax blocks 38, the other ends of the plurality of heat conducting rods 27 are fixedly connected with L-shaped heat conducting fins 28;
the protection traction mechanism comprises three J-shaped protection sleeves 29, three pairs of elastic pull rods 31 and three connecting blocks 32, the three J-shaped protection sleeves 29 are respectively movably sleeved at one end part of the three electrode posts 26, the bottom ends of the three connecting blocks 32 are respectively fixedly connected with one side of the top ends of the three J-shaped protection sleeves 29, welding points 33 are fixedly embedded in the centers of the top ends of the three connecting blocks 32, the three pairs of elastic pull rods 31 are respectively arranged at two sides of the three J-shaped protection sleeves 29, side posts 30 are respectively and fixedly connected with two side walls of the three J-shaped protection sleeves 29, one end parts of the six side posts 30 are respectively and fixedly connected with one ends of the six elastic pull rods 31, and the other ends of the six elastic pull rods 31 are respectively and fixedly connected with one end of the shell 19;
a first epitaxial layer 2 is formed on an N-type substrate 1, two grooves 4 are formed on the top end of the first epitaxial layer 2 by etching, and forming a P-pillar 6 in the trench 4, simultaneously forming a second epitaxial layer 3 on the first epitaxial layer 2, forming the P-pillar 6 again in the through-trench 5, etching a body region trench 7 at the top end of the second epitaxial layer 3, forming a P-type body region 8 in the two body region grooves 7, forming a protective layer 10 after etching the top ends of the two P-type body regions 8 into grooves, performing As injection and diffusion in the protective layer 10, forming a gate oxide layer 17 in the middle of the surface of the second epitaxial layer 3, forming a polysilicon gate 18 on the surface of the gate oxide layer 17, arranging a metal plate 12 on the top end of the polysilicon gate 18, forming a G gate 14 on the surface of the metal plate 12, the S source electrode 13 is formed on the surfaces of two N type body regions 9, the D drain electrode 15 is formed on the surfaces of the other two N type body regions 9, and the bottom surface of the N type substrate 1 is electrically connected with the D drain electrode 15 through a wiring 16; three J-shaped protective sleeves 29 are sleeved at one end of three electrode posts 26 for protection, the three J-shaped protective sleeves 29 can be detachably stretched, three connecting blocks 32 can be bonded with other devices or welded and fixed by three welding points 33, so that the elastic force of the three J-shaped protective sleeves 29 can generate inward tightening force for protection, when the structure in the shell 19 releases heat, the plurality of heat conducting branch blocks 21 transmit the heat to the heat conducting pins 34, the plurality of heat conducting pins 34 transmit the heat to the plurality of expansion balls 35 again, the plurality of expansion balls 35 increase the hydraulic pressure of the heat dissipating oil 37, the plurality of heat conducting plates 23 are jacked up by the hydraulic pressure to fully adhere and conduct the heat, when a large amount of heat is generated in the shell 19, the plurality of L-shaped heat conducting sheets 28 absorb the heat and transmit the heat to the sealing wax block 38 by the plurality of heat conducting rods 27, and the sealing wax block 38 is melted and flows and filled between each pair of U-shaped screen plates 25 to realize the sealing of the shell 19, the heat and the continuous spread of the fire source are cut off, and the isolation protection is realized.
In the invention, when a user uses the device, during production, an N-type substrate 1 is provided, a first epitaxial layer 2 is formed on the N-type substrate 1 by means of an epitaxial process, two grooves 4 are formed by etching on the top end of the first epitaxial layer 2, P pillars 6 are formed in the two grooves 4, then secondary epitaxy is carried out on the first epitaxial layer 2 in a synchronous step, so As to form a second epitaxial layer 3, attention is paid to secondary epitaxy, an opening, namely two through grooves 5, is formed in the area of the P pillars 6 by means of masking, then the P pillars 6 are formed in the through grooves 5 again, body region grooves 7 are etched on the top end of the second epitaxial layer 3, B injection and diffusion are carried out in the two body region grooves 7, so As to form a P body region 8, etching is carried out on the top ends of the two P body regions 8, a protective layer 10 is formed after grooving, then As injection and diffusion are carried out in the protective layer 10, a gate oxide layer 17 is formed in the middle part of the surface of the second epitaxial layer 3, forming a polysilicon gate 18 on the surface of the gate oxide layer 17, arranging a metal plate 12 on the top of the polysilicon gate 18, forming a G gate 14 on the surface of the metal plate 12, wherein S source electrodes 13 are formed on the surfaces of two N-type body regions 9, D drain electrodes 15 are formed on the surfaces of the other two N-type body regions 9, and the bottom surface of the N-type substrate 1 is electrically connected with the D drain electrodes 15 through a wiring 16; when the electrode column is not installed and used, the plurality of electrode columns 26 are exposed outside, when the electrode column is transported and carried, the electrode columns 26 are fragile and easy to bend and damage, at the moment, the J-shaped protective sleeve 29 can be sleeved at one end part of the electrode column 26 to realize the protection of the electrode column 26, meanwhile, the two sides of the J-shaped protective sleeve 29 are respectively provided with the side column 30, the J-shaped protective sleeve 29 can be obliquely tensioned through a plurality of elastic pull rods 31 which are matched and fixed at one end of the shell 19, so that the electrode column 26 can be protected, the shape and the placing position of the electrode column can be kept, other bending forces can be buffered and offset, the electrode column can be kept in a straight placing state, after a subsequent circuit is connected, the three J-shaped protective sleeves 29 can be detached, the J-shaped protective sleeve 29 is stretched, and is made of insulating silica gel, soft and elastic, so that the J-shaped protective sleeve 29 can be stretched and deformed by force to enable the connecting block 32 arranged on the J-shaped protective sleeve 29, the vertical placement is changed into horizontal placement, so that the shell can be bonded with other structures in a circuit or welded by virtue of a welding point 33 at the center, secondary connection between the shell 19 and other connecting units except the electrode post 26 can be realized by virtue of the three J-shaped protective sleeves 29, inward tightening force can be generated between the electrode post 26 and other connecting units by virtue of elasticity generated by stretching, and the electrode post 26 cannot be easily separated and fall off after being externally connected, so that traction anti-separation protection can be formed after the electrode post 26 is protected; when the heat dissipation device is powered on in use, the heat generated by the structures such as the N-type substrate 1, the first epitaxial layer 2, the second epitaxial layer 3 and the like is continuously accumulated in the shell 19, at the moment, the heat can be transferred to the heat conduction pins 34 through the heat conduction branch blocks 21 which are in direct contact, the heat is transferred to the expansion balls 35 arranged at the bottoms of the heat conduction pins 34, the expansion balls 35 are made of thermal expansion materials and reset when being heated and expanded when being cooled, so that the volume of the expansion balls 35 arranged in the heat dissipation oil 37 is increased after being heated, the liquid pressure is increased, a plurality of elastic boxes 22 made of elastic materials are pushed by hydraulic pressure, the elastic boxes 22 are jacked up, so that the elastic boxes are tightly attached to the internal structure to perform direct heat transfer, the heat dissipation is improved, the cooling is realized, the collected and guided heat can enter the heat dissipation oil 37, and the specific heat capacity of the heat dissipation oil 37 is large, the heat which can be absorbed and cooled can be far dissipated out of the structure, so that the heat can be effectively and continuously dissipated, after the heat is reduced, the volume of the expansion balls 35 is recovered to be normal, so that the hydraulic pressure is reduced, at the moment, under the action of gravity and elasticity, the elastic box 22 and the heat conducting plate 23 are lowered, are separated from the internal structure and are not contacted, and the normal heat dissipation requirement of the elastic box is not influenced; when the work is abnormal and the like, the internal structure of the shell 19 releases a large amount of heat, even burns out, at the moment, a large amount of heat can be conducted through the plurality of L-shaped heat-conducting fins 28 and is firstly transmitted to the plurality of heat-conducting rods 27, then the plurality of heat-conducting rods 27 transmit the heat to the sealing wax block 38 inside the strip-shaped plate 24, the heat enables the sealing wax block 38 to melt, so as to flow down, the pores in each pair of U-shaped net plates 25 are filled, before the sealing wax block 38 is not melted, each pair of U-shaped net plates 25 can keep ventilation and heat dissipation inside and outside the shell 19, meanwhile, the U-shaped net plates 25 can block impurities and dust in filtered air, so as to keep external foreign matters not to enter the shell 19, when the work is punctured and generates a large amount of heat, the melted sealing wax block 38 fills each pair of U-shaped net plates 25, so that no gap exists between the rectangular groove and the electrode column 26, so that the inside of the shell 19 is completely sealed, therefore, the internal fire can be blocked, an oxygen-free environment is created, and the fire is prevented from being transmitted and spread to other circuit positions, the pores of the U-shaped screen plate 25 are small, the flowing-down sealing wax block 38 has certain viscosity and can be filled in the pores and can not flow out from the pores, so that all the pores of the U-shaped screen plate 25 can be filled and covered, a sealing shielding condition is formed, and isolation protection is realized.
The preferred embodiments of the invention disclosed above are intended to be illustrative only. The preferred embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention. The invention is limited only by the claims and their full scope and equivalents.

Claims (10)

1. A multi-epitaxy super junction power MOSFET structure comprising an N-type substrate (1) and a housing (19), characterized in that: the N-type substrate (1) is arranged in the shell (19), the top end of the N-type substrate (1) is fixedly connected with a first epitaxial layer (2), the top end of the first epitaxial layer (2) is fixedly connected with a second epitaxial layer (3), two grooves (4) are formed in the top end of the first epitaxial layer (2), two through grooves (5) are formed in the middle of the second epitaxial layer (3), the two grooves (4) and the insides of the two through grooves (5) are respectively filled with P columns (6), the top end of the second epitaxial layer (3) is provided with two individual zone grooves (7), the insides of the two individual zone grooves (7) are fixedly embedded with a P-type zone body (8), the top ends of the P-type zone bodies (8) are fixedly embedded with two N-type zone bodies (9), and the top ends of the N-type zone bodies (9) are fixedly connected with an S source electrode (13), the top ends of the other two N-type body regions (9) are fixedly connected with a D drain electrode (15), the middle part of the top end of the second epitaxial layer (3) is fixedly connected with a gate oxide layer (17), the top end of the gate oxide layer (17) is fixedly provided with a polysilicon gate (18), and the top end of the polysilicon gate (18) is fixedly provided with a G gate (14);
the middle part on shell (19) top and the middle part of bottom all are equipped with cooling mechanism, the fixed three electrode post (26) that run through of one end of shell (19), it is three the outside of electrode post (26) is equipped with sealing mechanism, and is three a tip of electrode post (26) all is equipped with protection drive mechanism.
2. The superjunction power MOSFET structure capable of realizing multiple epitaxy according to claim 1, wherein the S source (13), the D drain (15) and the G gate (14) are respectively electrically connected with three electrode posts (26), an insulating layer (11) is fixedly arranged at the top end of the second epitaxial layer (3), a protective layer (10) is fixedly embedded between each of the four N-type body regions (9) and two P-type body regions (8), and the insulating layer (11) is a silicon dioxide (SiO2) insulating layer.
3. The super-junction power MOSFET structure capable of realizing multiple epitaxy is characterized in that the cooling mechanism comprises a rectangular box (20), a plurality of elastic boxes (22) and a plurality of heat-conducting plates (23), the rectangular box (20) is fixedly embedded with the middle of the top end or the middle of the bottom end of the shell (19), the elastic boxes (22) are fixedly embedded at the top end of the rectangular box (20), the heat-conducting plates (23) are respectively and fixedly arranged on the inner walls of the bottom ends of the elastic boxes (22), a plurality of heat-radiating columns (36) are fixedly inserted at the bottom ends of the heat-conducting plates (23), and the middle of the heat-radiating columns (36) is fixedly penetrated through the bottom ends of the elastic boxes (22).
4. The super-junction power MOSFET structure capable of realizing multiple epitaxy according to claim 3, wherein the inside of the rectangular box (20) is filled with heat dissipation oil (37), the bottoms of the heat dissipation columns (36) are all placed in the heat dissipation oil (37), the inside of the rectangular box (20) is provided with a plurality of expansion balls (35), the top ends of the expansion balls (35) are all fixedly inserted with heat conduction pins (34), the top end of the rectangular box (20) is fixedly provided with a plurality of heat conduction branch blocks (21), and the top ends of the heat conduction pins (34) are all fixedly inserted through the top end of the rectangular box (20) and are respectively fixedly inserted with the bottom ends of the heat conduction branch blocks (21).
5. The super-junction power MOSFET structure capable of realizing multiple epitaxy as claimed in claim 1, wherein the sealing mechanism comprises a strip-shaped plate (24), a plurality of heat conducting rods (27) and three sealing wax blocks (38), the strip-shaped plate (24) is fixedly embedded with one end of the housing (19), three rectangular grooves are symmetrically formed in the middle of the strip-shaped plate (24), the other ends of the three electrode columns (26) respectively penetrate through the interiors of the three rectangular grooves, and a pair of U-shaped screens (25) is fixedly arranged in the interiors of the three rectangular grooves.
6. The superjunction power MOSFET structure capable of multiple epitaxy according to claim 5, wherein the top inner walls of the three rectangular grooves are fixedly embedded with three sealing wax blocks (38), one end of each of the plurality of heat conducting rods (27) is sequentially fixed to penetrate through the top of the front face of the strip-shaped plate (24) and one side wall of each of the three sealing wax blocks (38), and the other end of each of the plurality of heat conducting rods (27) is fixedly connected with an L-shaped heat conducting fin (28).
7. The superjunction power MOSFET structure capable of realizing multiple epitaxy according to claim 1, wherein the protection pulling mechanism comprises three J-shaped protection sleeves (29), three pairs of elastic pull rods (31) and three connecting blocks (32), the three J-shaped protection sleeves (29) are respectively movably sleeved at one end of the three electrode columns (26), the bottom ends of the three connecting blocks (32) are respectively fixedly connected with one side of the top ends of the three J-shaped protection sleeves (29), and welding points (33) are fixedly embedded at the centers of the top ends of the three connecting blocks (32).
8. The superjunction power MOSFET structure capable of multiple epitaxy according to claim 7, wherein three pairs of said elastic pull rods (31) are respectively disposed on two sides of three J-shaped protection sleeves (29), two side walls of three J-shaped protection sleeves (29) are respectively fixedly connected with side pillars (30), one end portions of six said side pillars (30) are respectively fixedly connected with one end portions of six elastic pull rods (31), and the other end portions of six elastic pull rods (31) are respectively fixedly connected with one end portion of the housing (19).
9. A use method of a super junction power MOSFET structure capable of being extended for multiple times is characterized in that: the super junction power MOSFET structure is the super junction power MOSFET structure capable of multi-epitaxy of any one of claims 1-8: form first epitaxial layer (2) on N type substrate (1) the top of first epitaxial layer (2) is etched and is formed two slots to form P post (6) in the slot, synchronous sudden formation second epitaxial layer (3) on first epitaxial layer (2), form P post (6) again in leading to groove (5), the top etching body district groove (7) of second epitaxial layer (3) is two body district groove (7) form P type body district (8), two form protective layer (8) behind the top etching grooving of P type body district (8), the inside As that carries out of protective layer (8) is poured into and is diffused, the middle part on second epitaxial layer (3) surface forms gate oxide (17), the surface of gate oxide (17) forms polycrystalline silicon grid (18), the top of polycrystalline silicon grid (18) sets up metal sheet (12), g grid electrodes (14) are formed on the surface of the metal plate (12), S source electrodes (13) are formed on the surfaces of two N-type body regions (9), D drain electrodes (15) are formed on the surfaces of the other two N-type body regions (9), and the bottom surface of the N-type substrate (1) is electrically connected with the D drain electrodes (15) through wiring lines (16).
10. The use method of the multi-epitaxy super junction power MOSFET structure of claim 9, comprising the following steps: the three J-shaped protective sleeves (19) are sleeved at one end of the three electrode columns (26) for protection, the three J-shaped protective sleeves (19) can be detached and stretched, the three connecting blocks (32) can be bonded with other devices or welded and fixed by means of three welding points (33), so that the elastic force of the three I-shaped protective sleeves (19) can generate inward tightening force for protection, when the structure in the shell (19) is released, the heat conducting branch blocks (21) transfer heat to the heat conducting pins (34), the heat conducting pins (34) transfer heat to the expansion balls (35) again, the hydraulic pressure of heat radiating oil (37) is increased by the expansion balls (35), the heat conducting plates (23) are jacked up by hydraulic pressure to rise and are fully attached for heat conduction, and when a large amount of heat is generated in the shell (19), the L-shaped heat conducting fins (28) absorb the heat, and the heat conduction rods (27) are used for transmitting the heat to the sealing wax blocks (38), the sealing wax blocks (38) are melted and filled between each pair of U-shaped net plates (25), the shell (19) is sealed, the heat and the fire source are cut off from continuing spreading, and isolation protection is realized.
CN202110956734.7A 2021-08-19 2021-08-19 Super junction power MOSFET structure capable of being extended for multiple times and using method Pending CN113690196A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110956734.7A CN113690196A (en) 2021-08-19 2021-08-19 Super junction power MOSFET structure capable of being extended for multiple times and using method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110956734.7A CN113690196A (en) 2021-08-19 2021-08-19 Super junction power MOSFET structure capable of being extended for multiple times and using method

Publications (1)

Publication Number Publication Date
CN113690196A true CN113690196A (en) 2021-11-23

Family

ID=78580777

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110956734.7A Pending CN113690196A (en) 2021-08-19 2021-08-19 Super junction power MOSFET structure capable of being extended for multiple times and using method

Country Status (1)

Country Link
CN (1) CN113690196A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114122115A (en) * 2022-01-28 2022-03-01 绍兴中芯集成电路制造股份有限公司 Super junction semiconductor device and forming method thereof
CN117293173A (en) * 2023-11-27 2023-12-26 无锡昌德微电子股份有限公司 Lateral power MOSFET device and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114122115A (en) * 2022-01-28 2022-03-01 绍兴中芯集成电路制造股份有限公司 Super junction semiconductor device and forming method thereof
CN117293173A (en) * 2023-11-27 2023-12-26 无锡昌德微电子股份有限公司 Lateral power MOSFET device and manufacturing method thereof
CN117293173B (en) * 2023-11-27 2024-02-13 无锡昌德微电子股份有限公司 Lateral power MOSFET device and manufacturing method thereof

Similar Documents

Publication Publication Date Title
CN113690196A (en) Super junction power MOSFET structure capable of being extended for multiple times and using method
CN108428740B (en) IGBT chip with composite gate structure containing virtual gate
CN104979400A (en) Closed cell lateral mosfet using silicide source and body regions
CN107068759A (en) Semiconductor devices and its manufacture method
CN101807599B (en) Semiconductor device and method of manufacturing the same
CN107768442A (en) Superjunction devices and its manufacture method
CN101379614B (en) Method and apparatus for forming a semiconductor-on-insulator (SOI) body-contacted device
CN111146290A (en) Cellular structure of silicon carbide VDMOS device and manufacturing method thereof
JPH1117176A (en) Silicon-carbide semiconductor device
CN109728073A (en) The method of semiconductor devices and manufacturing semiconductor devices
CN106981484A (en) The layout design method of standard cell lib area is reduced using local interlinkage
ITTO20100724A1 (en) INTEGRATED ELECTRONIC DEVICE WITH ON-BOARD TERMINATION STRUCTURE AND ITS MANUFACTURING METHOD
CN111653531A (en) Novel double-current IGBT packaging structure and method thereof
CN103855197B (en) A kind of IGBT device and forming method thereof
TW200302556A (en) Manufacturing method of semiconductor device
CN108598160B (en) IGBT chip with folding composite gate structure
JP2005191247A (en) Semiconductor substrate and semiconductor device using the same
CN102646712A (en) Laterally diffused metal oxide semiconductor (LDMOS) and manufacturing method thereof
CN105957897B (en) The manufacturing method of groove grid super node MOSFET
TWI573197B (en) Semiconductor structure and its corresponding manufacturing method
KR102285499B1 (en) Method of manufacturing silicon carbide MOSFET single cell structure
JPS5887873A (en) Insulated gate type semiconductor device
WO2019134466A1 (en) Lateral insulator gate bipolar transistor and manufacturing method thereof
CN210743952U (en) High-voltage DMOS device
JP3301271B2 (en) Horizontal power MOSFET

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination