CN113659830A - Charge pump circuit with dynamically adjusted output voltage - Google Patents
Charge pump circuit with dynamically adjusted output voltage Download PDFInfo
- Publication number
- CN113659830A CN113659830A CN202110949812.0A CN202110949812A CN113659830A CN 113659830 A CN113659830 A CN 113659830A CN 202110949812 A CN202110949812 A CN 202110949812A CN 113659830 A CN113659830 A CN 113659830A
- Authority
- CN
- China
- Prior art keywords
- charge pump
- voltage
- circuit
- input
- driving circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention discloses a charge pump circuit with dynamically adjusted output voltage, relating to the power supply field, wherein the input power end of a charge pump driving circuit in the charge pump circuit is connected with a high-voltage input voltage and is also connected with the input ground end of the charge pump driving circuit through a capacitor, a feedback resistor is bridged between the input power end and the input ground end of the charge pump driving circuit, a current sampling circuit samples the current of the high-voltage output voltage generated by the charge pump circuit to generate a sampling current, the sampling current and a reference current are taken as the input end of a current amplifier, the output end of the current amplifier is connected with the feedback resistor, a negative feedback loop formed by the current sampling circuit and the feedback resistor carries out negative feedback adjustment on the voltage difference of the charge pump driving circuit according to the output high-voltage output voltage, the output voltage of the charge pump can be stabilized, the current output capability is improved, and the overhigh output voltage under light load is avoided.
Description
Technical Field
The invention relates to the field of power supplies, in particular to a charge pump circuit for dynamically adjusting output voltage.
Background
In actual integrated circuit use, there are many cases where there is a demand for a booster circuit, i.e., a circuit that can make an output voltage higher than an input voltage. Existing non-isolated BOOST circuits generally fall into two categories, BOOST converters and charge pumps. BOOST converters and their like utilize the magnetic energy storage capability of inductors to sequentially BOOST the output voltage to a level higher than the input voltage, but such circuits have the disadvantage of requiring inductors, requiring additional processing steps, complicated operation and additional expense, whether the inductors are directly used as separate inductors or SIP packages the inductors with integrated circuits. The charge pump circuit obtains an output voltage higher than the input voltage by using a way that the capacitor carries charges step by step. In most processes, the capacitor can be integrated directly on-chip, so no additional process is required, and a charge pump is the preferred choice for light load applications.
The existing common charge pump circuit is shown in fig. 1 and 2, fig. 1 is a dickson charge pump, fig. 2 is a double cross-coupled charge pump, but the output voltage of these conventional charge pumps is a fixed value and cannot be changed, if a large current output capacity is required and the maximum voltage of the charge pump is limited, only the flying capacitor C can be increasedFLY(fly capacitor), which consumes a huge area on the chip.
Disclosure of Invention
In view of the above problems and technical needs, the present invention provides a charge pump circuit with dynamically adjusted output voltage, and the technical solution of the present invention is as follows:
a charge pump circuit with dynamically adjusted output voltage comprises a charge pump drive circuit, a flying capacitor is arranged in the charge pump drive circuit, and an input power supply end HVDD of the charge pump drive circuit is connected with a high-voltage input voltage VINThe input power supply terminal HVDD of the charge pump driving circuit is also connected with the capacitor C1The input ground end HGND of the charge pump driving circuit is connected, and the output end of the charge pump driving circuit is used as the output end of the charge pump circuit to output a high-voltage output voltage VCP;
Feedback resistor RREGIs bridged between the input power end and the input ground end of the charge pump driving circuit, and the current sampling circuit outputs voltage V to high voltageCPSampling current to generate sampled current ISNSSampling the current ISNSAnd a reference current IREFThe output end of the current amplifier is connected with a feedback resistor R as the input end of the current amplifierREG;
Output high voltage output voltage VCPAnd the voltage difference V between the input power end and the input ground end of the charge pump driving circuitHVDD-VHGNDPositive correlation, negative feedback loop formed by current sampling circuit and feedback resistor, output voltage V according to output high voltageCPFor voltage difference VHVDD-VHGNDNegative feedback adjustment is performed.
The further technical scheme is that the current sampling circuit comprises a sampling resistor RSNSAnd a switching tube M1, a sampling resistor RSNSOne end of the switch tube M1 is connected with the output end of the charge pump circuit, the other end of the switch tube M1 is connected with the source electrode of the switch tube M1, and the grid electrode of the switch tube M1 is connected with the high-voltage input voltage VINThe drain electrode of the switching tube M1 is connected to the input end of the current amplifier and outputs a sampling current ISNS。
The further technical scheme is that the charge pump circuit also comprises a Zener diode D1Zener diode D1The cathode of the charge pump is connected with an input power end of the charge pump driving circuit, and the anode of the charge pump is connected with an input ground end of the charge pump driving circuit.
The further technical scheme is that the input ground end of the charge pump driving circuit is connected with the source electrode of a switch tube M2, the drain electrode of the switch tube M2 is grounded, and the output end of the current amplifier and a sampling resistor R are connectedSNSAnd a zener diode D1The anodes are connected to the grid of the switch tube M2 and the input ground of the charge pump driving circuit through the switch tube M2.
The charge pump driving circuit comprises X-stage cascaded pump group branches, each pump group branch comprises a first flying capacitor and a second flying capacitor which are connected through a cross coupling circuit, each pump group branch is cascaded in sequence through a voltage input end and a voltage output end, the voltage input end of the first pump group branch is connected with the input power end of the charge pump driving circuit, and the voltage output end of the last pump group branch is used as the output end of the charge pump driving circuit;
the clock signal is connected with the first flying capacitors in each pump unit branch through the first floating phase inverter, the clock signal is connected with the second flying capacitors in each pump unit branch through the second floating phase inverter and the third floating phase inverter which are sequentially connected in series, and the clock signals obtained by the two flying capacitors in each pump unit branch are opposite; the input power supply end of the charge pump driving circuit is connected with the power supply of the first floating inverter, and the input ground end of the charge pump driving circuit is connected with the grounds of the three floating inverters.
The charge pump circuit further comprises a voltage switching circuit, wherein the input end of the voltage switching circuit is connected with a high-voltage input voltage VINAnd a low voltage power supply VDDThe output end of the voltage switching circuit is connected with the input power supply end of the charge pump driving circuit; when V isIN>VDDThe voltage switching circuit outputs a high-voltage input voltage VIN(ii) a When V isIN≤VDDThe voltage switching circuit outputs a low-voltage power supply VDD。
The beneficial technical effects of the invention are as follows:
the application discloses output voltage dynamic adjustment's charge pump circuit, the negative feedback loop who forms through current sampling circuit and feedback resistance in this charge pump circuit can stabilize charge pump's output voltage, avoids output voltage too high under the underload when having improved current output ability. The output voltage of the charge pump can be changed by adjusting the voltage of the power supply rail of the floating phase inverter, and the control is simple and the efficiency is high. In addition, a voltage switching circuit is additionally arranged, and the input voltage provided for the charge pump driving circuit can be switched through the voltage switching circuit, so that the high-voltage input voltage V is ensuredINThe charge pump output voltage is still normal at lower levels.
Drawings
Fig. 1 is a circuit configuration of a conventional dickson charge pump.
Fig. 2 is a circuit configuration of a conventional double cross-manifold charge pump.
Fig. 3 is a circuit configuration schematic diagram of an embodiment of a charge pump circuit of the present application.
Fig. 4 is a schematic circuit diagram of the charge pump driving circuit in fig. 3.
Detailed Description
The following further describes the embodiments of the present invention with reference to the drawings.
Referring to fig. 3, the charge pump circuit includes a charge pump driving circuit, the charge pump driving circuit includes a flying capacitor therein, and an input power source terminal HVDD of the charge pump driving circuit is connected to a high-voltage input voltage VINThe input power supply terminal HVDD of the charge pump driving circuit is also connected with the capacitor C1The output end of the charge pump driving circuit is used as the output end of the whole charge pump circuit to output a high-voltage output voltage VCP。
In an open-loop charge pump circuit, an ideal high voltage output VCP_idealAnd a high voltage input voltage VINIs the voltage increment DeltaV, V generated by the charge pump driving circuitCP_ideal=VIN+ Δ V. The output current capability of the charge pump circuit is IOUT=(VCP_ideal-VCP)×CFLY×fCPIn which C isFLYIs the capacitance value of the flying capacitor in the charge pump driving circuit, fCPIs oscillation frequency, output current capability IOUTAnd ideal high voltage output VCP_idealAnd the actual high voltage output voltage VCPIs proportional to the voltage difference. Therefore, if a large current needs to be output, the voltage increment Δ V generated by the charge pump driving circuit needs to be increased.
In the present application, as shown in fig. 4, the charge pump driving circuit internally includes X-stage cascaded pump group branches, each pump group branch including first flying capacitors C connected by a cross-coupling circuitFLY1And a second flying capacitor CFLY2The capacitance values of the two flying capacitors are equal. Each pump set branch circuit is sequentially cascaded through a voltage input end and a voltage output end, and the voltage input end of the first-stage pump set branch circuit is connected with the input power supply end HVDD of the charge pump driving circuit to obtain VHVDDThe voltage output end of the last pump set branch circuit is used as the output end of the charge pump driving circuit to output high-voltage output voltage VCP。
The clock signal CLK is connected to the first flying capacitor C in each pump stack branch via a first floating inverter V1FLY1The clock signal CLK is connected to the second flying capacitor C in each pump group branch through a second floating inverter V2 and a third floating inverter V3 connected in series in turnFLY2The clock signals acquired by the two flying capacitors in each pump group branch are opposite. The input power source terminal HVDD of the charge pump driving circuit is connected to the power supply V of the first floating inverter V1HVDDThe input ground of the charge pump driving circuit, HGND, is connected to the ground of the three floating inverters V1, V2, V3. A level shift circuit is also typically connected between the clock signal CLK and the floating inverter.
Specifically, each cross-coupling circuit comprises two NMOS transistors MN1 and MN2 and two PMOS transistors PN1 and PN2, the drains of MN1 and MN2 are connected and serve as voltage input ends, the source of MN1, the source of PN1, the gate of MN2 and the gate of PN2 are connected, the source of MN2 is connected with the source of PN2, the gate of MN1 and the gate of PN1, and the drains of PN1 and PN2 are connected and serve as voltage output ends. First flying capacitor CFLY1The positive pole of the capacitor is connected with the gates of MN2 and PN2, the negative pole of the capacitor is connected with the first floating inverter V1 and the second flying capacitor CFLY2Has its anode connected to the gates of MN1 and PN1 and its cathode connected to the third floating inverter V3.
Based on the charge pump driving circuit with the circuit structure shown in fig. 4, the voltage of the flying capacitor of each stage of pump group branch circuit when the flying capacitor is fully charged is VHVDD-VHGNDThus, the voltage increment Δ V generated by each pump group branchFLY=VHVDD-VHGNDThe whole charge pump driving circuit comprises X stages of pump group branches, so that the voltage increment delta V generated by the whole charge pump driving circuit is X multiplied by delta VFLYTherefore, under the same capacitance area, larger current can be output by increasing the number X of the pump group branches in the charge pump driving circuit.
However, this causes another problem that if the output load is empty, the output voltage is high, which makes it difficult to balance the power supply capability of the charge pump with the target output voltage. In order to solve the problem, the charge pump circuit of the present application further includes a current sampling circuit and a feedback resistor RREGAnd forming a negative feedback loop. Feedback resistor RREGAnd is connected across the input power supply terminal HVDD and the input ground terminal HGND of the charge pump driving circuit. Current sampling circuit for high voltage output voltage VCPSampling current to generate sampled current ISNSSampling the current ISNSAnd a reference current IREFAs input of a current amplifier, ISNSConnected to the negative input of the current amplifier, IREFThe positive input end of the current amplifier is connected, and the output end of the current amplifier is connected with the feedback resistor RREG。
In the present application, the voltage increment Δ V generated by the charge pump driving circuit is equal to the voltage difference V between the input power terminal HVDD and the input ground terminal HGND of the charge pump driving circuitHVDD-VHGNDPositive correlation so as to output a high voltage output voltage VCPAnd the voltage difference V between the input power end and the input ground end of the charge pump driving circuitHVDD-VHGNDAnd (4) positively correlating. A negative feedback loop formed by the current sampling circuit and the feedback resistor outputs a voltage V according to the output high voltageCPFor voltage difference VHVDD-VHGNDPerforming negative feedback when the voltage V is output at high voltageCPWhen too high, the negative feedback loop causes the voltage difference VHVDD-VHGNDReduce, thereby reducing the high voltage output voltage VCPThe output voltage is stabilized, and the expected output voltage can be obtained under light load.
As shown in FIG. 3, the current sampling circuit includes a sampling resistor RSNSAnd a switching tube M1, a sampling resistor RSNSOne end of the switch tube M1 is connected with the output end of the charge pump circuit, the other end of the switch tube M1 is connected with the source electrode of the switch tube M1, and the grid electrode of the switch tube M1 is connected with the high-voltage input voltage VINThe drain electrode of the switching tube M1 is connected to the input end of the current amplifier and outputs a sampling current ISNS. Sampling currentVGSIs the gate-source voltage of the switching tube M1, so that the voltage difference V can be obtainedHVDD-VHGND=(IREF-ISNS)×AI×RREG,AIIs a current amplifierWhen the high voltage is output to the voltage VCPAt too high a voltage difference VHVDD-VHGNDLowering and then making VCPAnd decreases.
In order to protect the floating low voltage tube from breakdown, the charge pump circuit further comprises a Zener diode D1Zener diode D1The cathode of the charge pump is connected with the input power end of the charge pump driving circuit, the anode of the charge pump is connected with the input ground end HGND of the charge pump driving circuit, and the voltage difference V is ensuredHVDD-VHGNDWill not exceed the Zener diode D1Reverse breakdown voltage VZENORAnd thus the voltage difference VHVDD-VHGND=MAX{(IREF-ISNS)×AI×RREG,VZENOR}. Zener diode D1Reverse breakdown voltage VZENORFor example, 6V, the voltage difference V can be ensuredHVDD-VHGNDAnd will not exceed 6V.
Thus, the output voltage of the last charge pump is VCP=IREF×RSNS+VIN+VGSMaximum output current capability of IOUTMAX=(VCP_ideal-VCP)×CFLY×fCP=X×VZENOR-IREF×RSNS-VGS×CFLY×fCP。
In an actual application circuit, as shown in fig. 3, the input ground HGND of the charge pump driving circuit is connected to the source of the switching tube M2, the drain of the switching tube M2 is connected to the ground GND, and the output end of the current amplifier and the sampling resistor R are connected to the groundSNSAnd a zener diode D1The anodes are connected to the gate of the switching tube M2 and to the input ground HGND of the charge pump driving circuit through the switching tube M2.
In addition, to ensure abnormal conditions, VINAt a lower voltage, VCPThe voltage can still be normally established, the charge pump circuit also comprises a voltage switching circuit, and the input end of the voltage switching circuit is connected with a high-voltage input voltage VINAnd a low voltage power supply VDDThe output end of the voltage switching circuit is connected with the input power supply end of the charge pump driving circuit. Voltage switching circuitOutput VINAnd VDDThe larger of: in normal operation, VIN>VDDThe voltage switching circuit outputs a high-voltage input voltage VIN(ii) a In case of abnormality, VIN≤VDDVoltage switching circuit outputting low voltage power supply VDDEnsure VINThe charge pump output voltage is still normal at lower levels. High voltage input voltage VINThe terminal usually also comprises a diode D2。
What has been described above is only a preferred embodiment of the present application, and the present invention is not limited to the above embodiment. It is to be understood that other modifications and variations directly derivable or suggested by those skilled in the art without departing from the spirit and concept of the present invention are to be considered as included within the scope of the present invention.
Claims (6)
1. The charge pump circuit with the output voltage dynamically adjusted is characterized by comprising a charge pump driving circuit, wherein a flying capacitor is arranged in the charge pump driving circuit, and an input power supply end HVDD of the charge pump driving circuit is connected with a high-voltage input voltage VINThe input power supply terminal HVDD of the charge pump driving circuit is also connected with the capacitor C1The input ground end HGND of the charge pump driving circuit is connected, and the output end of the charge pump driving circuit is used as the output end of the charge pump circuit to output a high-voltage output voltage VCP;
Feedback resistor RREGThe current sampling circuit is bridged between an input power supply end and an input ground end of the charge pump driving circuit and outputs the high-voltage output voltage VCPSampling current to generate sampled current ISNSThe sampling current ISNSAnd a reference current IREFAs the input end of the current amplifier, the output end of the current amplifier is connected with the feedback resistor RREG;
The output high-voltage output voltage VCPIs equal to the voltage difference between the input power terminal and the input ground terminal of the charge pump driving circuitHVDD-VHGNDPositive correlation, negative feedback loop formed by the current sampling circuit and the feedback resistor, high outputVoltage output voltage VCPFor voltage difference VHVDD-VHGNDNegative feedback adjustment is performed.
2. The charge pump circuit of claim 1, wherein the current sampling circuit comprises a sampling resistor RSNSAnd a switching tube M1, the sampling resistor RSNSOne end of the switch tube M1 is connected to the output end of the charge pump circuit, the other end of the switch tube M1 is connected to the source electrode of the switch tube M1, and the gate of the switch tube M1 is connected to the high-voltage input voltage VINThe drain electrode of the switching tube M1 is connected to the input end of the current amplifier and outputs the sampling current ISNS。
3. The charge pump circuit of claim 1, further comprising a zener diode D1Said Zener diode D1The cathode of the charge pump is connected with the input power end of the charge pump driving circuit, and the anode of the charge pump is connected with the input ground end of the charge pump driving circuit.
4. The charge pump circuit of claim 3, wherein the input ground of the charge pump driving circuit is connected to the source of a switch M2, the drain of the switch M2 is connected to ground, the output of the current amplifier is connected to the sampling resistor RSNSAnd the zener diode D1The anodes are connected to the grid of the switch tube M2 and the input ground of the charge pump driving circuit through the switch tube M2.
5. The charge pump circuit according to any one of claims 1 to 4, wherein the charge pump driving circuit internally comprises X-stage cascaded pump group branches, each pump group branch comprises a first flying capacitor and a second flying capacitor connected by a cross-coupling circuit, each pump group branch is sequentially cascaded by a voltage input end and a voltage output end, the voltage input end of the first-stage pump group branch is connected with the input power end of the charge pump driving circuit, and the voltage output end of the last-stage pump group branch is used as the output end of the charge pump driving circuit;
the clock signal is connected with the first flying capacitors in each pump unit branch through a first floating phase inverter, the clock signal is connected with the second flying capacitors in each pump unit branch through a second floating phase inverter and a third floating phase inverter which are sequentially connected in series, and the clock signals obtained by the two flying capacitors in each pump unit branch are opposite; and the input power supply end of the charge pump driving circuit is connected with the power supply of the first floating phase inverter, and the input ground end of the charge pump driving circuit is connected with the grounds of the three floating phase inverters.
6. The charge pump circuit according to any of claims 1-4, further comprising a voltage switching circuit, wherein an input terminal of the voltage switching circuit is connected to the high voltage input voltage VINAnd a low voltage power supply VDDThe output end of the voltage switching circuit is connected with the input power end of the charge pump driving circuit; when V isIN>VDDThe voltage switching circuit outputs a high-voltage input voltage VIN(ii) a When V isIN≤VDDThe voltage switching circuit outputs a low-voltage power supply VDD。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110949812.0A CN113659830B (en) | 2021-08-18 | 2021-08-18 | Charge pump circuit with dynamically adjusted output voltage |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110949812.0A CN113659830B (en) | 2021-08-18 | 2021-08-18 | Charge pump circuit with dynamically adjusted output voltage |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113659830A true CN113659830A (en) | 2021-11-16 |
CN113659830B CN113659830B (en) | 2023-03-31 |
Family
ID=78481044
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110949812.0A Active CN113659830B (en) | 2021-08-18 | 2021-08-18 | Charge pump circuit with dynamically adjusted output voltage |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113659830B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114400888A (en) * | 2022-01-25 | 2022-04-26 | 无锡英迪芯微电子科技股份有限公司 | Charge pump circuit of self-adaptive hybrid linear modulation and frequency modulation |
CN116742950A (en) * | 2023-08-09 | 2023-09-12 | 深圳市美矽微半导体有限公司 | Charge pump circuit |
CN117498684A (en) * | 2023-12-29 | 2024-02-02 | 中茵微电子(南京)有限公司 | Charge pump output voltage regulating circuit |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020145892A1 (en) * | 2001-04-05 | 2002-10-10 | Joseph Shor | Efficient charge pump with constant boosted output voltage |
CN101674009A (en) * | 2008-09-10 | 2010-03-17 | 中芯国际集成电路制造(上海)有限公司 | Charge pump output voltage regulation circuit |
CN103401544A (en) * | 2013-07-03 | 2013-11-20 | 西安电子科技大学 | Driving circuit for charge management chip external high-voltage N-channel metal oxide semiconductor (NMOS) transistor |
CN105048801A (en) * | 2015-08-24 | 2015-11-11 | 北京兆易创新科技股份有限公司 | Voltage conversion circuit |
CN105071654A (en) * | 2015-08-24 | 2015-11-18 | 北京兆易创新科技股份有限公司 | Voltage conversion circuit |
CN106712495A (en) * | 2016-12-29 | 2017-05-24 | 北京兆易创新科技股份有限公司 | Charge pump circuit |
CN108491018A (en) * | 2018-04-04 | 2018-09-04 | 上海申矽凌微电子科技有限公司 | A kind of on piece boost voltage source circuit |
-
2021
- 2021-08-18 CN CN202110949812.0A patent/CN113659830B/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020145892A1 (en) * | 2001-04-05 | 2002-10-10 | Joseph Shor | Efficient charge pump with constant boosted output voltage |
CN101674009A (en) * | 2008-09-10 | 2010-03-17 | 中芯国际集成电路制造(上海)有限公司 | Charge pump output voltage regulation circuit |
CN103401544A (en) * | 2013-07-03 | 2013-11-20 | 西安电子科技大学 | Driving circuit for charge management chip external high-voltage N-channel metal oxide semiconductor (NMOS) transistor |
CN105048801A (en) * | 2015-08-24 | 2015-11-11 | 北京兆易创新科技股份有限公司 | Voltage conversion circuit |
CN105071654A (en) * | 2015-08-24 | 2015-11-18 | 北京兆易创新科技股份有限公司 | Voltage conversion circuit |
CN106712495A (en) * | 2016-12-29 | 2017-05-24 | 北京兆易创新科技股份有限公司 | Charge pump circuit |
CN108491018A (en) * | 2018-04-04 | 2018-09-04 | 上海申矽凌微电子科技有限公司 | A kind of on piece boost voltage source circuit |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114400888A (en) * | 2022-01-25 | 2022-04-26 | 无锡英迪芯微电子科技股份有限公司 | Charge pump circuit of self-adaptive hybrid linear modulation and frequency modulation |
CN114400888B (en) * | 2022-01-25 | 2023-10-10 | 无锡英迪芯微电子科技股份有限公司 | Self-adaptive hybrid linear modulation and frequency modulation charge pump circuit |
CN116742950A (en) * | 2023-08-09 | 2023-09-12 | 深圳市美矽微半导体有限公司 | Charge pump circuit |
CN117498684A (en) * | 2023-12-29 | 2024-02-02 | 中茵微电子(南京)有限公司 | Charge pump output voltage regulating circuit |
Also Published As
Publication number | Publication date |
---|---|
CN113659830B (en) | 2023-03-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN113659830B (en) | Charge pump circuit with dynamically adjusted output voltage | |
US7046076B2 (en) | High efficiency, low cost, charge pump circuit | |
US7276960B2 (en) | Voltage regulated charge pump with regulated charge current into the flying capacitor | |
US6617832B1 (en) | Low ripple scalable DC-to-DC converter circuit | |
Palumbo et al. | Charge pump circuits: An overview on design strategies and topologies | |
TWI499185B (en) | Multiple output charge pump and method for operating the same | |
CN108390556B (en) | Charge pump circuit | |
US20130093503A1 (en) | High current drive switched capacitor charge pump | |
US8022749B2 (en) | Circuit arrangement for voltage supply and method | |
CN101097456B (en) | Voltage regulator | |
WO2006121524A1 (en) | Methods and apparatus for dynamically reconfiguring a charge pump during output transients | |
US6674317B1 (en) | Output stage of a charge pump circuit providing relatively stable output voltage without voltage degradation | |
US20030011420A1 (en) | Control method of charge-pump circuit | |
CN109871059B (en) | Ultralow voltage L DO circuit | |
US20190028024A1 (en) | Single-stage cmos-based voltage quadrupler circuit | |
CN114744869B (en) | Three-level step-down direct current converter | |
CN112564470B (en) | Ultralow-voltage self-starting control circuit for DC-DC converter | |
US7164309B1 (en) | Voltage multiplier circuit including a control circuit providing dynamic output voltage control | |
US7683699B2 (en) | Charge pump | |
US7176732B2 (en) | Device and method for increasing the operating range of an electrical circuit | |
CN216599425U (en) | Boost circuit | |
Umaz | Design of a single-stage power converter operating in burst and continuous modes for low-power energy sources | |
CN109062308B (en) | Voltage regulation circuit | |
KR20110030373A (en) | Dc-dc converter | |
CN216819709U (en) | Triple voltage exponential function switch capacitor booster circuit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |