CN113644453A - Broadband low-profile reconfigurable wave absorber for realizing reflection/wave absorption switching in X wave band - Google Patents
Broadband low-profile reconfigurable wave absorber for realizing reflection/wave absorption switching in X wave band Download PDFInfo
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- CN113644453A CN113644453A CN202110754102.2A CN202110754102A CN113644453A CN 113644453 A CN113644453 A CN 113644453A CN 202110754102 A CN202110754102 A CN 202110754102A CN 113644453 A CN113644453 A CN 113644453A
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- 239000006096 absorbing agent Substances 0.000 title claims abstract description 57
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 29
- 230000000737 periodic effect Effects 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000004088 simulation Methods 0.000 claims abstract description 16
- 239000010410 layer Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 239000002344 surface layer Substances 0.000 claims description 6
- 238000002310 reflectometry Methods 0.000 abstract description 3
- 230000010287 polarization Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000011358 absorbing material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 230000007547 defect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
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Abstract
The invention discloses a broadband low-profile reconfigurable wave absorber for realizing reflection/wave absorption switching in an X wave band, which is divided into three parts from top to bottom: the broadband function switches active FSS, air layer, circuit simulation absorber; the broadband function switching active FSS comprises a dielectric plate and metal units which are orthogonally arranged on two sides of the dielectric plate and are periodically arranged; the metal units are formed by dipoles connected by PIN diodes, the dipoles are the same in size and are arranged along the horizontal or vertical direction; the metal units are obliquely arranged at an angle of 45 degrees, and the circuit simulation absorber comprises a dielectric plate, periodic units and a bottom plate; the periodic unit is composed of square rings which are orthogonally arranged, and the periodic unit and the bottom plate are made of resistive films. The invention has the characteristics of high wave absorbing rate and reflectivity, wide switching bandwidth, low profile, insensitivity to the angle of incident waves and the polarization mode and the like.
Description
Technical Field
The invention belongs to the technical field of broadband electromagnetic wave absorbers, and particularly relates to a broadband low-profile reconfigurable wave absorber for realizing reflection/wave absorption switching in an X wave band.
Background
Compared with the traditional wave-absorbing structure, the wave-absorbing structure can be used for completing wave absorption only by increasing the structure thickness, and the design of introducing a Frequency Selective Surface (FSS) into the wave absorber can effectively realize impedance matching, so that the thickness of the wave absorber is reduced, and the wave-absorbing performance is improved. After active elements such as electric control and light control elements are loaded, the active FSS realizes the regulation and control of frequency response, so that the active FSS can adapt to the change of an external complex electromagnetic environment. The reconfigurable wave absorber introduces active FSS into the wave absorber design, and can effectively overcome the defect that the frequency response of the traditional wave absorber is not adjustable.
Currently, a reconfigurable wave absorber is developing vigorously, for example, chinese patent application No. 201811062061.5, entitled "an adjustable X-band wave absorbing material with a frequency selective surface", and provides a wave absorbing material for realizing switching between single-frequency broadband wave absorbing and dual-frequency wave absorbing states. The invention loads PIN diodes on the Yelu cooling cross ring, and realizes the switching between the two states of the broadband absorption of 7.6-12.6GHz and the dual-frequency absorption of 8.0-9.1GHz and 10.2-12GHz by adjusting the bias voltage at the two ends of the diodes. However, the invention can not completely realize the switching of the wave absorbing and reflecting performances of the X wave band. Due to the limitations of the working frequency range and performance of active elements such as diodes and the like, most reconfigurable wave absorbers have narrow switching bandwidth and low working frequency range, and cannot meet the requirement of high working frequency range. Reconfigurable wave absorbers often require a large number of feed lines, resulting in a complex feed line structure.
Disclosure of Invention
The invention aims to provide a broadband low-profile reconfigurable wave absorber for realizing reflection/wave absorption switching in an X wave band, which has the characteristics of high wave absorption rate and reflectivity, wide switching bandwidth, low profile, insensitivity to the angle and polarization mode of incident waves and the like.
The technical scheme for realizing the purpose of the invention is as follows: a broadband low-profile reconfigurable wave absorber for realizing reflection/wave absorption switching in an X wave band is divided into three parts from top to bottom, wherein the first part is a broadband function switching active FSS, the second part is an air layer, and the third part is a circuit simulation absorber; the broadband function switching active FSS comprises a first dielectric plate and metal units which are orthogonally arranged on the upper surface and the lower surface of the first dielectric plate and are periodically arranged; the metal units are formed by dipoles connected by PIN diodes, the dipoles are the same in size and are arranged along the horizontal or vertical direction; the circuit simulation absorber comprises a second dielectric plate, periodic units and a bottom plate, wherein the periodic units are periodically distributed on the surface layer of the second dielectric plate, and the bottom plate is arranged at the bottom layer of the second dielectric plate; the periodic unit is composed of square rings which are arranged in an orthogonal mode.
Further, the materials of the periodic unit and the bottom plate are resistance films.
Furthermore, the metal units on the upper surface and the lower surface of the first dielectric plate are the same in shape and orthogonal in direction.
Further, the first dielectric plate is a rectangular plate, and the metal units are obliquely arranged at 45 degrees on the first dielectric plate.
Further, the second dielectric plate is a rectangular plate, and the periodic units are arranged in an inclined manner at 45 °.
Further, the material of the dipole is metal.
Further, the dielectric constant of the first dielectric plate is 2.2.
Further, the dielectric constant of the second dielectric plate is 4.4.
Compared with the prior art, the invention has the beneficial effects that:
(1) the invention can realize the switching of frequency response between wave-absorbing and reflecting states in an X wave band, and the relative bandwidth is about 50 percent;
(2) in the wave-absorbing state, the invention can realize the absorption of 90 percent of incident waves; in a reflection state, reflection of incident waves above-1 dB can be realized;
(3) the section of the structure of the invention is lower, which is only 3.177mm, about 0.1 lambda, and lambda is the free space wavelength corresponding to the central frequency of the working frequency band.
Drawings
Fig. 1 is a front dimension scale diagram of a broadband function switching active FSS cell.
Fig. 2 is a rear dimension scale diagram of a broadband function switching active FSS cell.
Fig. 3 is a 2 x 2 cycle layout of a broadband function switching active FSS cell.
Fig. 4 is a front dimension specification diagram of a circuit simulation absorber.
Fig. 5 is a rear dimension specification diagram of the circuit simulation absorber.
Fig. 6 is a 2 × 2 periodic layout of circuit simulated absorbers.
Figure 7 is a side dimensional graph of a reconfigurable absorber.
Fig. 8 is a graph of reflection coefficient versus frequency for TE polarized waves incident at different angles of incidence in the reflective state of the reconfigurable absorber.
Fig. 9 is a graph of reflection coefficient versus frequency for a reconfigurable absorber at TM polarized wave incidence at different angles of incidence in the reflective state.
Fig. 10 is a graph of absorption rate of the reconfigurable wave absorber in the wave absorbing state at different incident angles when a TE polarized wave is incident, as a function of frequency.
FIG. 11 is a graph of absorption rate of a reconfigurable wave absorber in a wave absorbing state at different incidence angles when a TM polarized wave is incident, along with frequency changes.
The length of a-periodic unit side, the length of l-dipole, the width of w-dipole, the width of space between two s-dipoles, the length of b-square ring resistive film patch outer side, the width of g-square ring resistive film patch, and h1, h2 and h3 are respectively the thickness of the second part, the third part and the first part; the shaded part in fig. 1-3 is a metal structure, the shaded part in fig. 4-6 is a resistive film structure, and the other blank part is a dielectric substrate.
Detailed Description
The invention provides a broadband low-profile reconfigurable wave absorber for realizing reflection/wave absorption switching in an X wave band, which is a multilayer structure consisting of a broadband function switching active FSS and a traditional circuit simulation absorber. The active FSS, the air layer and the circuit simulation absorber are respectively switched for the broadband function from top to bottom. The broadband function switching active FSS is composed of single-layer double-sided dipole arrays connected by PIN diodes, wherein the dipoles on the two sides have the same size and are orthogonal in direction. The material of the dipole is metal. The circuit simulation absorber consists of a square annular resistive film patch, a dielectric substrate and a resistive film bottom plate. The number of layers and the thickness of the dielectric plate can be optimally determined. When a forward voltage is applied, the diode is conducted, the broadband function switching active FSS can be regarded as a long metal strip array, and a reflecting state is presented in an X wave band, so that the reconfigurable wave absorber presents a reflecting state; when a reverse voltage is applied, the diode is cut off, the broadband function switching active FSS can be regarded as a short dipole array, and the short dipole array is resonant at high frequency and has a transmission characteristic in an X wave band. The transmitted electromagnetic waves are absorbed by the circuit simulation absorber, so that the reconfigurable wave absorber is in a wave absorbing state in an X wave band.
The broadband low-profile reconfigurable wave absorber has the relative bandwidth of about 50%, realizes the absorption of 90% of incident waves in a wave absorbing state, realizes the reflection of more than-1 dB of the incident waves in a reflecting state, and has higher absorptivity and reflectivity. The invention is composed of a broadband function switching active FSS and a traditional circuit simulation absorber, adopts a series-parallel feeding mode, has simple feeder structure and small longitudinal dimension which is only 3.177mm and is about 0.1 lambda, and lambda is free space wavelength corresponding to the central frequency of a working frequency band, thereby better realizing the requirement of low section.
The invention is described in detail below by way of example with reference to the accompanying drawings.
Examples
The invention provides a broadband low-profile reconfigurable wave absorber for realizing reflection/wave absorption switching in an X wave band, and the specific structure of the wave absorber is shown in figures 1-6. The structural unit of the invention is divided into three parts from top to bottom, wherein the first part is a broadband function switching active FSS unit, the second part is an air layer, and the third part is a circuit simulation absorber unit.
The broadband function switching active FSS structural unit is a surface layer periodic structural unit, a first dielectric slab 1 and a bottom layer periodic structural unit from top to bottom respectively. The surface layer periodic structure units are dipoles 2 connected by PIN diodes, the PIN diodes are same in direction, the dipoles are same in size and unlimited in number, and are arranged in the horizontal or vertical direction. The bottom layer periodic structure unit and the surface layer periodic structure unit have the same size and are orthogonal in direction, and the structure is shown in fig. 1 and fig. 2. In the figure 2-1 is the corresponding dipole. The first medium substrate is a rectangular plate and is made of a lossy medium.
The structural units of the circuit simulation absorber are respectively a square annular resistive film patch 4, a second dielectric substrate 3 and a resistive film base plate 5 from top to bottom, and the structures are shown in fig. 4 and 5.
A side view of a broadband low profile reconfigurable absorber is shown in figure 7.
In this embodiment, the working frequency band of the broadband function switching active FSS is an X band, the size of the periodic unit is 6mm, and the periodic unit is obliquely arranged at 45 ° on an infinite plane. The arrangement of the broadband function switching active FSS cells is shown in fig. 3.
In this embodiment, the dielectric substrate in the broadband function switching active FSS is Rogers5880 with a relative permittivity of 2.2.
In this embodiment, the material selected for the periodic structure of the broadband function switching active FSS surface layer and the bottom layer is metal.
In this embodiment, the PIN diode is selected from the DSM 8100-000.
In this embodiment, the working frequency band of the circuit analog absorber is an X band, the size of the periodic unit is 6mm, and the periodic unit is obliquely arranged at 45 ° on an infinite plane. The circuit simulated absorber unit arrangement is shown in figure 6.
In this embodiment, the dielectric substrate in the circuit analog absorber is FR-4 with a relative permittivity of 4.4.
In this embodiment, the square resistance of the square ring resistive film patch is 10 Ω/sq, and the square resistance of the resistive film base plate is 6 Ω/sq.
In the embodiment, forward voltage is applied to the diode, the diode is conducted, and the structure works in a reflection state to realize total reflection of incident waves; the diode is applied with reverse voltage and is cut off, and the structure of the invention works in a wave-absorbing state to realize the absorption of incident waves.
In this example, the cell size parameters shown in table 1 were determined.
TABLE 1 broadband low-profile reconfigurable wave absorber unit size parameters (in mm) for realizing reflection/wave absorption switching in X band
| a | s | l | h1 | w | | h2 | h3 | |
| 6 | 0.4 | 1.72 | 0.127 | 0.3 | 0.3 | 2.55 | 0.3 |
The reflection and absorption performances of the broadband low-profile reconfigurable wave absorber when TE and TM polarized waves under different incident angles are incident are shown in figures 8-11, and the curves are simulation results obtained by CST electromagnetic simulation software. As can be seen from the figure, the broadband low-profile reconfigurable wave absorber realizes the switching between the reflection of incident electromagnetic waves and the wave absorbing state in the X wave band, and realizes the reflection function when the diode is conducted; when the diode is cut off, the wave absorbing function is realized. In the reflection and wave absorption states, when TE/TM polarized waves are incident, the reflection performance and the absorption performance are stable in a working frequency band under the incident angle of 0-45 degrees.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and improvements can be made without departing from the principle of the present invention, and these modifications and improvements should also be considered as the protection scope of the present invention.
Claims (8)
1. A broadband low-profile reconfigurable wave absorber for realizing reflection/wave absorption switching in an X wave band is characterized by being divided into three parts from top to bottom, wherein the first part is a broadband function switching active FSS, the second part is an air layer, and the third part is a circuit simulation absorber; the broadband function switching active FSS comprises a first dielectric plate and metal units which are orthogonally arranged on the upper surface and the lower surface of the first dielectric plate and are periodically arranged; the metal units are formed by dipoles connected by PIN diodes, the dipoles are the same in size and are arranged along the horizontal or vertical direction; the circuit simulation absorber comprises a second dielectric plate, periodic units and a bottom plate, wherein the periodic units are periodically distributed on the surface layer of the second dielectric plate, and the bottom plate is arranged at the bottom layer of the second dielectric plate; the periodic unit is composed of square rings which are arranged in an orthogonal mode.
2. The broadband low-profile reconfigurable wave absorber for realizing reflection/wave absorption switching in an X wave band according to claim 1, wherein the materials of the periodic unit and the bottom plate are resistive films.
3. The broadband low-profile reconfigurable wave absorber for realizing reflection/wave absorption switching in an X-band according to claim 1, wherein the metal elements on the upper and lower surfaces of the first dielectric plate have the same shape and are orthogonal in direction.
4. The broadband low-profile reconfigurable wave absorber for realizing reflection/wave absorption switching in an X-band according to claim 3, wherein the first dielectric plate is a rectangular plate, and the metal units are obliquely arranged at 45 degrees on the first dielectric plate.
5. The broadband low-profile reconfigurable wave absorber for realizing reflection/wave absorption switching in an X-band according to claim 3, wherein the second dielectric plate is a rectangular plate, and the periodic units are obliquely arranged at 45 degrees.
6. The broadband low-profile reconfigurable wave absorber for realizing reflection/wave absorption switching in an X-band according to claim 1, wherein the material of the dipoles is metal.
7. The broadband low-profile reconfigurable wave absorber for realizing reflection/wave absorption switching in an X-band according to claim 1, wherein the dielectric constant of the first dielectric plate is 2.2.
8. The broadband low-profile reconfigurable wave absorber for realizing reflection/wave absorption switching in an X-band according to claim 1, wherein the dielectric constant of the second dielectric plate is 4.4.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114374097A (en) * | 2022-01-26 | 2022-04-19 | 西安电子科技大学 | Broadband, multifrequency and frequency conversion antenna coating |
| CN116995445A (en) * | 2023-09-28 | 2023-11-03 | 中北大学 | Broadband electromagnetic wave absorption/reflection switchable integrated metamaterial structure |
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Cited By (3)
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|---|---|---|---|---|
| CN114374097A (en) * | 2022-01-26 | 2022-04-19 | 西安电子科技大学 | Broadband, multifrequency and frequency conversion antenna coating |
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| CN116995445B (en) * | 2023-09-28 | 2023-12-15 | 中北大学 | Broadband electromagnetic wave absorption/reflection switchable integrated metamaterial structure |
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