CN113644012A - Screening device and screening method for semiconductor discharge tube - Google Patents
Screening device and screening method for semiconductor discharge tube Download PDFInfo
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- CN113644012A CN113644012A CN202110914452.0A CN202110914452A CN113644012A CN 113644012 A CN113644012 A CN 113644012A CN 202110914452 A CN202110914452 A CN 202110914452A CN 113644012 A CN113644012 A CN 113644012A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 238000012216 screening Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000012360 testing method Methods 0.000 claims abstract description 53
- 230000002950 deficient Effects 0.000 claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 239000013072 incoming material Substances 0.000 claims abstract description 4
- 230000008859 change Effects 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 9
- 238000003466 welding Methods 0.000 claims description 7
- 230000002159 abnormal effect Effects 0.000 claims description 4
- 238000005070 sampling Methods 0.000 claims description 4
- 238000005476 soldering Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 230000008929 regeneration Effects 0.000 claims description 3
- 238000011069 regeneration method Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000012858 packaging process Methods 0.000 abstract 1
- 230000001737 promoting effect Effects 0.000 abstract 1
- 238000007430 reference method Methods 0.000 abstract 1
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 6
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- NMWSKOLWZZWHPL-UHFFFAOYSA-N 3-chlorobiphenyl Chemical compound ClC1=CC=CC(C=2C=CC=CC=2)=C1 NMWSKOLWZZWHPL-UHFFFAOYSA-N 0.000 description 1
- 101001082832 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) Pyruvate carboxylase 2 Proteins 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67271—Sorting devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B07—SEPARATING SOLIDS FROM SOLIDS; SORTING
- B07C—POSTAL SORTING; SORTING INDIVIDUAL ARTICLES, OR BULK MATERIAL FIT TO BE SORTED PIECE-MEAL, e.g. BY PICKING
- B07C5/00—Sorting according to a characteristic or feature of the articles or material being sorted, e.g. by control effected by devices which detect or measure such characteristic or feature; Sorting by manually actuated devices, e.g. switches
- B07C5/34—Sorting according to other particular properties
- B07C5/344—Sorting according to other particular properties according to electric or electromagnetic properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B07—SEPARATING SOLIDS FROM SOLIDS; SORTING
- B07C—POSTAL SORTING; SORTING INDIVIDUAL ARTICLES, OR BULK MATERIAL FIT TO BE SORTED PIECE-MEAL, e.g. BY PICKING
- B07C5/00—Sorting according to a characteristic or feature of the articles or material being sorted, e.g. by control effected by devices which detect or measure such characteristic or feature; Sorting by manually actuated devices, e.g. switches
- B07C5/36—Sorting apparatus characterised by the means used for distribution
- B07C5/361—Processing or control devices therefor, e.g. escort memory
- B07C5/362—Separating or distributor mechanisms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
- G01R31/52—Testing for short-circuits, leakage current or ground faults
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention discloses a screening device and a screening method for a semiconductor discharge tube, and relates to the technical field of semiconductor packaging. The device comprises a temperature control box, a test PCB and a stabilized voltage power supply; the test PCB is specifically an SMT paster PCB and consists of a plurality of PCB single boards, and the anodes of the adjacent PCB single boards are connected in parallel, and the cathodes of the adjacent PCB single boards are connected in parallel; the stabilized voltage power supply adopts a direct current stabilized voltage power supply which can observe output current; the method comprises the following steps: inspecting finished product incoming materials, carrying out SMT (surface mount technology) chip mounting, carrying out leakage current testing at normal temperature, putting the SMT chip PCB into a temperature control box, and recording. The invention truly simulates a harsh on-line test environment of actual products, can maximally check defective products of the semiconductor discharge tube to obtain effective yield data, thereby promoting the adjustment and improvement of chip production and packaging process parameters, and providing a reference method for performing a thorough test on mass product production.
Description
Technical Field
The invention belongs to the technical field of semiconductor packaging, and particularly relates to a screening device and a screening method for a semiconductor discharge tube.
Background
The semiconductor discharge tube is a transient voltage clamping device with a flyback function and is often applied to signal circuit surge or static suppression; the method is widely applied to the fields of communication circuits, electronic detonators, automotive electronics, Internet of things and the like. In the field of electronic detonators, the shipment quantity is huge, about 10 hundred million (1000kk) products are produced every year, 1000 defective products can be reduced when the yield is increased by one millionth, and the test cost of finished products such as manpower and material resources brought by the defective products can be greatly reduced.
During the chip flow sheet, scribing, routing packaging and other processes of the semiconductor discharge tube, the situations of improper tin glue amount, chip deviation, chip hidden crack and the like can occur, and the conventional electrical property test has higher speed and short test time, so that the situations of large leakage current, slow change and the like are difficult to find and remove, the reject ratio is higher, and the situations do not meet the requirements of mass delivery customers.
Disclosure of Invention
The invention provides a screening device and a screening method for semiconductor discharge tubes, which solve the problems.
In order to solve the technical problems, the invention is realized by the following technical scheme:
the invention discloses a screening device for semiconductor discharge tubes, which comprises a temperature control box, a test PCB (printed circuit board) arranged in the temperature control box and a voltage-stabilized power supply electrically connected with the test PCB;
the test PCB is specifically an SMT paster PCB and consists of a plurality of PCB single boards, the PCB single boards can be pasted with a semiconductor discharge tube device packaged by SOD-123FL, the single SMT paster is ten PCB single boards, the anodes of the adjacent PCB single boards are connected in parallel, and the cathodes of the adjacent PCB single boards are connected in parallel;
the stabilized voltage power supply adopts a direct current stabilized voltage power supply capable of observing output current.
A screening method of a semiconductor discharge tube is realized by utilizing a screening device of the semiconductor discharge tube, and specifically comprises the following steps:
s01, checking finished product incoming materials, carrying out basic electrical property test, removing basic electrical defective products and recording the products to a Table 1;
s02, SMT pasting is carried out, lead-free welding is carried out through reflow soldering equipment, standing is carried out for not less than 4 hours after welding is finished, and the temperature is reduced to normal temperature;
s03, performing leakage current test at normal temperature, rejecting current defective products and recording the current defective products as Table 2;
s04, placing the SMT chip PCB into a temperature control box, heating to perform a leakage current test, keeping for more than 10 hours, recording the leakage current change condition, and recording the number of defective products as Table 3;
s05, counting and calculating the overall yield, dissecting the defective parts, analyzing the defective types, feeding the defective types back to the production end, adjusting or improving the process requirements, and repeating the steps S01-S05 after regeneration;
s06, locking the production process after the yield meets the requirement, carrying out mass production, and discharging finished products in mass;
s07, sampling among batches, and repeating the steps S01-S05.
Further, in step S04, the temperature of the temperature control box is set to 85 ℃, and during the temperature rise, the change of the leakage current is recorded, and in the abnormal case, the leakage current is slowly increased to 10uA to 100uA, or the leakage current is greater than 100 uA.
Further, in the steps S03 and S04, once the leakage current larger than 100uA is large, the defective product is found out to be removed by suspending the test, and then the test field is restored to continue the test.
Further, the determination condition of the yield in the step S06 is specifically as follows: the total number of the defective products occurring in the steps S03 and S04, divided by the total number of the SMT patch device particles, is determined to be changed in process or mass-produced according to the customer' S requirement.
Compared with the prior art, the invention has the following beneficial effects:
1. the semiconductor discharge tube screening device provided by the invention has a batch screening function, can screen 525 SOD-123FL packaged semiconductor discharge tubes in a single board, and can test 10 or more PCBs in a parallel connection mode at one time, wherein the number of the PCBs can be more than 5000;
2. according to the screening method of the semiconductor discharge tube, the number of single tests is increased, the test time is prolonged, the conventional mode that a single rapid electrical test is carried out and the defective product of leakage current change is easy to miss is improved, the defective phenomenon of slow leakage current change can be effectively detected, and the defective product is screened;
3. the temperature control box is used for adjusting the temperature, the influence of the temperature on the leakage current of the semiconductor discharge tube can be observed, and a product research and development department and a production department can adjust process parameters through temperature characteristics;
4. compared with other methods, the screening method provided by the invention provides more severe test conditions, improves the quality requirements of products, reduces the reject ratio of batch products, reduces the test and repair costs when finished products are made for subsequent customers, meets the high requirements of customers, and is a product inspection optimization method in the fields of electronic detonators, automotive electronics, industrial control and the like.
Of course, it is not necessary for any product in which the invention is practiced to achieve all of the above-described advantages at the same time.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a flowchart illustrating a method for screening semiconductor discharge tubes according to the present invention;
FIG. 2 is a schematic structural diagram of a screening apparatus for semiconductor discharge tubes according to the present invention;
FIG. 3 is a diagram of an object of an empty PCB before SMT chip mounting according to the present invention;
FIG. 4 is a pictorial view of a piece of PCB mounted within the screening device of the present invention;
FIG. 5 is a photograph of an X-RAY analysis of defective products in the present invention;
in the drawings, the components represented by the respective reference numerals are listed below:
1-temperature control box, 2-test PCB board, 3-stabilized power supply.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 2-5, a screening apparatus for semiconductor discharge tubes of the present invention includes a temperature control box 1, a test PCB board 2 disposed in the temperature control box 1, and a regulated power supply 3 electrically connected to the test PCB board 2;
the test PCB 2 is specifically an SMT paster PCB and consists of a plurality of PCB single boards, the PCB single boards can be pasted with a semiconductor discharge tube device packaged by SOD-123FL, the single SMT paster is ten PCB single boards, the anodes of the adjacent PCB single boards are connected in parallel, and the cathodes of the adjacent PCB single boards are connected in parallel; the regulated power supply 3 is a dc regulated power supply which can observe output current.
As shown in fig. 1, a screening method for a semiconductor discharge tube, which is implemented by using the above screening apparatus for a semiconductor discharge tube, specifically includes the following steps:
s01, checking finished product incoming materials, carrying out basic electrical property test, removing basic electrical defective products and recording the products to a Table 1;
s02, SMT (surface mount technology) pasting is carried out, lead-free welding is carried out through reflow soldering equipment, standing is carried out for not less than 4 hours after welding is finished, and the temperature is reduced to normal temperature, 10 pasting pieces are adopted in the specific embodiment, the total number is 5250, and the welding temperature of the reflow soldering equipment is not more than 245 ℃;
s03, performing leakage current test at normal temperature, rejecting current defective products and recording the current defective products as Table 2;
s04, placing the SMT chip PCB into the temperature control box 1, heating to test the leakage current, keeping for more than 10h, recording the change condition of the leakage current, and recording the number of defective products as Table 3;
s05, counting and calculating the overall yield, dissecting the defective parts, analyzing the defective types, feeding the defective types back to the production end, adjusting or improving the process requirements, and repeating the steps S01-S05 after regeneration;
s06, locking the production process after the yield meets the requirement, carrying out mass production, and discharging finished products in mass;
s07, sampling among batches, and repeating the steps S01-S05.
In this embodiment, the length and width of the SMT mounted PCB in step S02 are set to 10cm × 10cm, and 525 semiconductor discharge devices packaged by the SOD-123FL can be mounted on the board; 10 PCB boards are mounted by SMT in one time, and the total number of the devices is 5250 or more than 5000;
specifically, in the normal-temperature leakage current test in step S03, a dc stabilized power supply capable of observing output current is specifically adopted, 22V or 24V dc voltage is loaded onto 10 PCBs in a parallel connection manner, all devices on the PCBs are in a parallel connection relationship, and whether an abnormal defective product exists is determined by observing the change of leakage current;
in step S04, the temperature of the temperature control box 1 is set to 85 ℃, and during the temperature rise, the change of the leakage current is recorded, and in the abnormal case, the leakage current is slowly increased to 10uA to 100uA, or the leakage current is greater than 100uA, and in the normal case, the semiconductor discharge tube does not operate, and the leakage current is about 1 uA.
In the steps S03 and S04, once the leakage current larger than 100uA is large, the defective products are found out and removed through the pause test, and then the test field is restored to continue the test.
The determination conditions of the yield in the step S06 are specifically: dividing the total number of defective products in the steps S03 and S04 by the total number of SMT chip device particles, if 3 defective products are present and the total number is 5250, the yield is 3/5250-0.57%; the decision is made that the process must be changed or that it can be shipped in bulk, depending on the customer's needs.
Step S07 is a testing apparatus and a testing method according to the present invention, which are used as a conventional testing method for batch sampling testing of semiconductor discharge tubes produced in large quantities, so as to ensure batch yield control and batch-to-batch process stability
Has the advantages that:
1. the semiconductor discharge tube screening device provided by the invention has a batch screening function, can screen 525 SOD-123FL packaged semiconductor discharge tubes in a single board, and can test 10 or more PCBs in a parallel connection mode at one time, wherein the number of the PCBs can be more than 5000;
2. according to the screening method of the semiconductor discharge tube, the number of single tests is increased, the test time is prolonged, the conventional mode that a single rapid electrical test is carried out and the defective product of leakage current change is easy to miss is improved, the defective phenomenon of slow leakage current change can be effectively detected, and the defective product is screened;
3. the temperature control box is used for adjusting the temperature, the influence of the temperature on the leakage current of the semiconductor discharge tube can be observed, and a product research and development department and a production department can adjust process parameters through temperature characteristics;
4. compared with other methods, the screening method provided by the invention provides more severe test conditions, improves the quality requirements of products, reduces the reject ratio of batch products, reduces the test and repair costs when finished products are made for subsequent customers, meets the high requirements of customers, and is a product inspection optimization method in the fields of electronic detonators, automotive electronics, industrial control and the like.
The preferred embodiments of the invention disclosed above are intended to be illustrative only. The preferred embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims (5)
1. The screening device for the semiconductor discharge tube is characterized by comprising a temperature control box (1), a test PCB (printed circuit board) placed in the temperature control box (1) and a stabilized voltage power supply (3) electrically connected with the test PCB (2);
the test PCB (2) is specifically an SMT paster PCB and is composed of a plurality of PCB single boards, the PCB single boards can be pasted with semiconductor discharge tube devices packaged by SOD-123FL, the single SMT paster is ten PCB single boards, the positive electrodes between the adjacent PCB single boards are connected in parallel, and the negative electrodes are connected in parallel;
the stabilized voltage power supply (3) adopts a direct current stabilized voltage power supply capable of observing output current.
2. A screening method for semiconductor discharge tubes, which is implemented by using the screening device for semiconductor discharge tubes of claim 1, and comprises the following steps:
s01, checking finished product incoming materials, carrying out basic electrical property test, removing basic electrical defective products and recording the products to a Table 1;
s02, SMT pasting is carried out, lead-free welding is carried out through reflow soldering equipment, standing is carried out for not less than 4 hours after welding is finished, and the temperature is reduced to normal temperature;
s03, performing leakage current test at normal temperature, rejecting current defective products and recording the current defective products as Table 2;
s04, placing the SMT chip PCB into a temperature control box (1), heating to test the leakage current, keeping for more than 10h, recording the change condition of the leakage current, and recording the number of defective products as Table 3;
s05, counting and calculating the overall yield, dissecting the defective parts, analyzing the defective types, feeding the defective types back to the production end, adjusting or improving the process requirements, and repeating the steps S01-S05 after regeneration;
s06, locking the production process after the yield meets the requirement, carrying out mass production, and discharging finished products in mass;
s07, sampling among batches, and repeating the steps S01-S05.
3. The method for screening semiconductor discharge tubes according to claim 2, wherein the temperature of the temperature control box (1) in step S04 is set to 85 ℃, and during the temperature rise, the change of the leakage current is recorded, and in the abnormal case, the leakage current is slowly increased to 10 uA-100 uA, or the leakage current is greater than 100 uA.
4. The method for screening semiconductor discharge tubes as claimed in claim 2, wherein in the steps S03 and S04, when the leakage current greater than 100uA is large, the defective products are found out and removed by suspending the test, and then the test field is restored to continue the test.
5. The method for screening semiconductor discharge tubes as claimed in claim 2, wherein the determination condition of the yield in the step S06 is specifically as follows: the total number of the defective products occurring in the steps S03 and S04, divided by the total number of the SMT patch device particles, is determined to be changed in process or mass-produced according to the customer' S requirement.
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| CN202110914452.0A CN113644012A (en) | 2021-08-10 | 2021-08-10 | Screening device and screening method for semiconductor discharge tube |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110914452.0A CN113644012A (en) | 2021-08-10 | 2021-08-10 | Screening device and screening method for semiconductor discharge tube |
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| CN1542880A (en) * | 2003-03-31 | 2004-11-03 | 松下电器产业株式会社 | Electrolytic capacitor |
| JP2005064042A (en) * | 2003-08-13 | 2005-03-10 | Fuji Electric Device Technology Co Ltd | Semiconductor device and evaluation method thereof |
| CN101752106A (en) * | 2009-12-23 | 2010-06-23 | 中国航空工业集团公司第六三一研究所 | Method of preventing failure of ceramic capacitor |
| CN106896244A (en) * | 2017-04-12 | 2017-06-27 | 江苏伊施德创新科技有限公司 | Ageing fixture and the method that contact condition and the test of ageing result are done using the fixture |
| CN111054663A (en) * | 2019-12-25 | 2020-04-24 | 株洲宏达电子股份有限公司 | Screening method of high-reliability tantalum capacitor |
| CN112630571A (en) * | 2020-12-24 | 2021-04-09 | 贵州航天计量测试技术研究所 | Dynamic aging test device for power driving module and test method thereof |
-
2021
- 2021-08-10 CN CN202110914452.0A patent/CN113644012A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW466660B (en) * | 2000-11-10 | 2001-12-01 | Innotest Inc | Integrated circuit device process and the leakage current testing device thereof |
| CN1542880A (en) * | 2003-03-31 | 2004-11-03 | 松下电器产业株式会社 | Electrolytic capacitor |
| JP2005064042A (en) * | 2003-08-13 | 2005-03-10 | Fuji Electric Device Technology Co Ltd | Semiconductor device and evaluation method thereof |
| CN101752106A (en) * | 2009-12-23 | 2010-06-23 | 中国航空工业集团公司第六三一研究所 | Method of preventing failure of ceramic capacitor |
| CN106896244A (en) * | 2017-04-12 | 2017-06-27 | 江苏伊施德创新科技有限公司 | Ageing fixture and the method that contact condition and the test of ageing result are done using the fixture |
| CN111054663A (en) * | 2019-12-25 | 2020-04-24 | 株洲宏达电子股份有限公司 | Screening method of high-reliability tantalum capacitor |
| CN112630571A (en) * | 2020-12-24 | 2021-04-09 | 贵州航天计量测试技术研究所 | Dynamic aging test device for power driving module and test method thereof |
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| CB02 | Change of applicant information |
Address after: 201613 floor 4, building 9, No. 199, Guangfulin East Road, Songjiang District, Shanghai Applicant after: SHANGHAI YINTE ELECTRONICS CO.,LTD. Address before: Room 1528, No. 25, Lane 38, Caoli Road, Fengjing town, Jinshan District, Shanghai 201502 Applicant before: SHANGHAI YINTE ELECTRONICS CO.,LTD. |
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| CB02 | Change of applicant information |