CN113639921B - MEMS pressure sensor based on topological photon high Q cavity - Google Patents
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L11/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00
- G01L11/02—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00 by optical means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/08—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of piezoelectric devices, i.e. electric circuits therefor
Abstract
The invention relates to an MEMS pressure sensor based on a topological photon high Q cavity, and belongs to the technical field of MEMS pressure sensors. The pressure sensor is a sensitive element and a bagSi sheet beams containing 1 sequential photonic crystal slab; the photonic crystal plate is a regular polygon, the thickness range is 0.5 um-0.6 um, and the side length range is 20 um-250 um; the photonic crystal plate is provided with a circular hole array with the period of 519.25nm, and the radius of the circular hole is 175nm; the Si sheet beam works: the light emitted by the laser is coupled to the Si sheet beam through the optical circulator, and the Si sheet beam is deformed by the change of the environmental pressure, so that the return value of the signal light is influenced, and the wavelength value of the light on the spectrometer is changed. The sensor effectively reduces the influence of out-of-plane scattering, so that the Q value is very high, up to 1×10 6 The detection sensitivity is as high as 2.17×10 6 pm/kPa; has the advantages of simple structure, small volume, low cost and mass production.
Description
Technical Field
The invention particularly relates to an MEMS pressure sensor based on a topological photon high Q cavity, and belongs to the technical field of MEMS pressure sensors.
Background
MEMS pressure sensors are a classical research direction in the MEMS field, which can be mass-produced with high accuracy and low cost using similar integrated circuit design techniques and manufacturing processes. The traditional mechanical pressure sensor is based on the stress deformation of a metal elastomer and performs measurement from the elastic deformation of the mechanical quantity to the electric quantity conversion output. Compared with the traditional pressure sensor, the MEMS pressure sensor has the characteristics of small size, high stability, small power consumption, batch production and integration and the like, and is widely applied to various fields of aviation, aerospace, petrochemical industry, geological exploration and the like. The silicon micro pressure sensor has the advantages of material performance advantages, process reliability, superior performance parameters and the like, and is a research hot spot and key point in the pressure detection field under the rapid development background of MEMS technology.
Currently, according to structural division, the silicon micro-pressure sensors commonly used in the market mainly comprise four structures of piezoresistive type, capacitive type, resonant type and optical fiber type. Compared with other types of sensors, the silicon resonant pressure sensor has the characteristics of high precision, high stability, high anti-interference capability and the like.
The piezoresistive silicon micro-pressure sensor utilizes the piezoresistive effect of monocrystalline silicon, and a semiconductor resistor connected into a Wheatstone bridge is injected in a specific direction of a silicon membrane to form a pressure sensing element, and then the micro-pressure detection is realized by combining an electro-force conversion device. The structure has simple manufacturing process and lower cost, and good linear relation exists between input and output, but the sensitivity of the sensor is influenced by the temperature drift of the silicon material, temperature compensation is needed, a complete temperature compensation technology is established, the cost is increased, and meanwhile, the manpower resource is increased, so that the wide application of the silicon piezoresistive pressure sensor is greatly limited in a certain sense.
The capacitive silicon micro pressure sensor has two types of polar distance change type and area change type, and the working principle is that the polar distance or area change amount is utilized to react to pressure change and is converted into capacitance change for measurement. The sensor has good temperature stability and good dynamic response. Wherein a pole pitch varying pressure sensor can achieve non-contact measurement with averaging effect, but with a large linearity error. The area-variable pressure sensor has linear advantages, but has insufficient sensitivity, and the process preparation is relatively complex.
The optical fiber type silicon pressure sensor is characterized in that light emitted by a light source is transmitted through an optical fiber and projected onto the inner surface of a diaphragm, then reflected, received by a receiving optical fiber and transmitted back to a photosensitive element, and accordingly, an output signal changes. This method is easy to implement, low in cost, but generally low in sensitivity.
The resonant silicon pressure sensor is a positive feedback oscillating system comprising silicon resonator and frequency selective amplifier, and has its inherent oscillating frequency changed when the system is acted by pressure, so that the pressure can be measured based on the frequency change. The performance of resonant silicon micro pressure sensors depends mainly on the mechanical quality of the resonators, with advantages of orders of magnitude over piezoresistive and capacitive ones in accuracy, stability and resolution. However, the resonant structure is too complex, which causes great difficulty in processing.
At present, related researches on a silicon resonant pressure sensor have entered a mature stage, the foreign starting is earlier, and the precision of the silicon-based pressure sensor with the double-resonant strain gauge structure is up to 0.01% FS, wherein the pressure sensor is designed by Nippon horizontal river electric machine Co. There are also many research teams in China for related research on MEMS resonant pressure sensors, and a micro resonant differential pressure sensor is proposed by the institute of electronics of China academy of sciences 2020, and the Q value reaches 18000.
In view of the above, it is necessary to find a new way to study a silicon micro-pressure sensor with higher sensitivity and miniaturization, and the invention provides a MEMS pressure sensor based on a topological photon high Q cavity.
Disclosure of Invention
The invention aims to solve the problems of simple structure, miniaturization and high sensitivity of the existing MEMS pressure sensor, and provides an MEMS pressure sensor based on a topological photon high Q cavity.
In order to achieve the above purpose, the present invention adopts the following technical scheme.
The MEMS pressure sensor based on the topological photon high Q cavity is a sensitive element and comprises 1 Si sheet beam;
the Si sheet beam is a sequential photon crystal plate;
the photonic crystal plate is a positive polygon, and the thickness range of the positive polygon is 0.5 um-0.6 um;
the side length number of the regular polygon is more than or equal to 4, and the side length range is 20 um-250 um;
the photonic crystal plate is provided with a periodic circular hole array, the period of the periodic circular hole array is 519.25nm, and the radius of a circular hole is 175nm;
the Si sheet beam is restrained in the cuboid base station, an optical fiber is connected to the upper portion of the cuboid base station, and the optical fiber is connected with an optical circulator which is connected with the spectrometer.
The testing system of the MEMS pressure sensor comprises a laser, an optical circulator, a sensitive element and a spectrometer; the laser is connected with the optical circulator, and the optical circulator is respectively connected with the laser, the sensitive element and the spectrometer.
The MEMS pressure sensor based on the topological photon high Q cavity is connected with the following working process:
step 4, connecting the optical circulator with a spectrometer;
so far, from step 1 to step 6, the testing pressure connection and the testing process of the MEMS pressure sensor based on the topological photon high Q cavity are completed.
Advantageous effects
Compared with the existing MEMS pressure sensor, the MEMS pressure sensor based on the topological photon high Q cavity has the following beneficial effects:
1. the MEMS pressure sensor is designed by utilizing a mechanical effect and a topological effect of a photonic crystal, and because the main limiting factor of the Q value of the photonic crystal is scattering loss caused by manufacturing defects or disorder, the MEMS pressure sensor adopts a photonic crystal plate with a sequence, the influence of out-of-plane scattering is effectively reduced, so that the Q value is very high, and the prepared MEMS pressure sensor has extremely high detection sensitivity;
2. the MEMS pressure sensor is processed on the silicon chip through the MEMS process, has the advantages of low cost and small volume, and is beneficial to mass production.
Drawings
FIG. 1 is a schematic diagram of a MEMS pressure sensor embodiment based on a topological photon high Q cavity in accordance with the present invention;
FIG. 2 is a diagram of a comsol simulation model of a sensing element in an embodiment of a MEMS pressure sensor based on a topological photon high Q cavity in accordance with the present invention;
FIG. 3 is a graph of results of a comsol simulation of the deformation of the sensing element in example 1 of the MEMS pressure sensor based on a topological photon high Q cavity;
FIG. 4 is a graph of results of a comsol simulation of the deformation of the sensing element in MEMS pressure sensor example 2 based on a topological photon high Q cavity;
FIG. 5 is a graph showing the relationship between the side length of the sensing element and the lower detection limit in an example 1 of the MEMS pressure sensor based on the topological photon high Q cavity;
FIG. 6 is a graph of the relationship between the thickness of the sensing element and the lower detection limit in an example 1 of a MEMS pressure sensor based on a topological photon high Q cavity;
FIG. 7 is a graph of side length dimensions of sensing elements versus sensitivity for MEMS pressure sensor example 2 based on a topological photonic high Q cavity in accordance with the present invention;
FIG. 8 is a graph of the relationship between the side length dimension of the sensing element and the lower detection limit in MEMS pressure sensor example 2 based on a topological photon high Q cavity;
FIG. 9 is a graph of the relationship between the Q value and the sensitivity of the sensing element in MEMS pressure sensor example 2 based on a topological photon high Q cavity;
FIG. 10 is a graph of the relationship between the Q value of the sensing element and the lower detection limit in an example 2 MEMS pressure sensor based on a topological photon high Q cavity;
FIG. 11 is a schematic structural diagram of a wafer-shaped Si sheet beam connection base of a MEMS pressure sensor based on a topological photon high Q cavity;
fig. 12 is a schematic structural diagram of a square Si sheet beam connection base of a MEMS pressure sensor based on a topological photonic high Q cavity of the present invention.
Detailed Description
The embodiments of the present invention will be described in detail below with reference to the drawings so that the advantages and features of the present invention can be more easily understood by those skilled in the art, thereby making clear and unambiguous the scope of the present invention. The implementation of the MEMS pressure sensor based on the topological photon high Q cavity is described in detail with reference to the accompanying drawings and the specific embodiments.
Example 1
The invention provides a MEMS pressure sensor based on a topological photon high Q cavity, which belongs to the category of silicon resonant pressure sensors and is used for improving the sensitivity of pressure measurement. The MEMS pressure sensor adopts a special photonic crystal plate, and special round hole arrays are distributed on the photonic crystal plate, so that the structure can effectively inhibit out-of-plane scattering loss caused by manufacturing defects, and the Q value of the MEMS pressure sensor is greatly enhanced. We obtained up to 1X 10 through COMSOL simulation 6 The sensitivity is as high as 2.17×10 6 pm/kPa, the pressure sensor is simpler in structure and higher in Q value and sensitivity than other known silicon resonant pressure sensors.
The MEMS pressure sensor based on the topological photon high Q cavity is a sensitive element comprising 1 Si sheet beam; circular hole arrays are distributed on the Si sheet beams, the radius of the circular holes of the circular hole arrays is 175nm, and the array period is 519.25nm; when the sensitive element is placed in the detected environment, deformation is generated due to the change of the environmental pressure. Preferably, the Si sheet beam has a detection lower limit of 7.14X10 when the Si sheet beam has a size of 250um×250um×0.5um -4 Pa, sensitivity of 2.17X10 6 (pm/kPa)。
The Si sheet beam is restrained in the cuboid base station; an optical fiber is suspended above the base station; the optical fiber is connected with an optical circulator; the optical circulator is connected with a spectrometer.
The principle of the invention is as follows: the laser emits a signal light, the signal light is coupled to the Si sheet beam through the optical circulator, the deformation of the Si sheet beam is changed by changing the environmental pressure, so that the return value of the signal light is influenced, and finally, the reflected result is the change of the wavelength value of the light output from the third end of the optical circulator.
FIG. 1 is a schematic diagram of the MEMS pressure sensor testing system, which comprises a laser, an optical circulator, a sensing element and a spectrometer; the laser is connected with the optical circulator, and the optical circulator is respectively connected with the laser, the sensitive element and the spectrometer; the laser sends out signal laser to the optical circulator, the signal laser is coupled to the sensitive element through the optical circulator, and the signal light returned from the sensitive element is output to the spectrometer through the optical circulator again, so that the wavelength change of the signal light can be obtained.
Fig. 2 is a diagram of a comsol simulation structure of the sensing element, wherein the diagram is a Si sheet with a length of 20um, a width of 20um and a height of 0.5um, circular hole arrays are distributed on the Si sheet, the circular hole radius of the circular hole arrays is 175nm, and the array period is 519.25nm, so that a photonic crystal plate is formed, and due to the unique topological characteristic, on-chip photon resonance is less susceptible to out-of-plane scattering loss than expected.
In the first embodiment of the MEMS pressure sensor based on the topological photon high Q cavity, four sides of the Si sheet beam are restrained, and influence factors of the detection lower limit and the sensitivity of the Si sheet beam are discussed from two dimensions of the size and the thickness of the Si sheet beam.
FIG. 3 is a graph of results of a comsol simulation of the deformation of the Si sheet beam in the first embodiment of the MEMS pressure sensor based on the topological photon high Q cavity, wherein the Si sheet beam is correspondingly deformed when the detected ambient pressure changes, and the deformation is expressed as total displacement on the surface. In the figure, si sheet Liang Sibian is constrained to be 20um long, 20um wide, 0.5um high, a surface load of 80N/m 2, a beam center-to-edge distance of 10um, and a relative deformation of about 1×10 -5 um, achieving parts per million of deformation at the micron level.
FIG. 5 is a graph of lower detection limits corresponding to different sized Si wafer beams in a first embodiment of the MEMS pressure sensor based on a topological photonic high Q cavity. It can be seen from the figure that the larger the size, the lower the detection lower limit, and the higher the detection accuracy. The Si piece Liang Bianchang is taken as an X axis, the detection lower limit is taken as a Y axis, and a fitting curve formula is obtained as Y= 816163X -3.002 . The optimal size of the Si sheet beam selected by the sensor is 250um multiplied by 250um. Preferably, the Si sheets Liang Bianchang and thicknesses are selected to be 250um and 0.5um, respectively.
FIG. 6 shows the lower limit of detection corresponding to Si sheet beams of different thicknesses in the first embodiment of the MEMS pressure sensor based on the topological photon high Q cavityA line graph. As can be seen from the figure, the smaller the thickness, the lower the detection limit, and the higher the detection accuracy. The Si sheet beam thickness is taken as an X axis, the detection lower limit is taken as a Y axis, and a fitting curve formula is obtained as Y=0.5625X 2 -0.2457x+0.0348. The optimal thickness of the Si sheet beam selected by the invention is 0.5um. When a Si sheet beam with the length of 250um, the width of 250um and the thickness of 0.5um is selected, the detection lower limit of the sensitive element is 0.0364Pa, and the sensitivity is 4.25X10 4 pm/kPa。
Example 2
In example 2 of the MEMS pressure sensor based on the topological photon high Q cavity, the Si sheet beam was subjected to single-side constraint, and the relationship among the Si sheet beam dimension side length, the detection lower limit, the sensitivity, and the Q value was studied, respectively.
FIG. 4 is a graph of results of a comsol simulation of the Si sheet beam deformation in example 2 of the MEMS pressure sensor based on topological photonic high Q cavity, with a surface load of 1.6N/m 2, a highest deformation edge-to-constraint edge distance of 20um, and a relative deformation of about 2×10 -5 um, also achieving parts per million of deformation at the micrometer level.
FIG. 7 is a graph showing sensitivity relationships corresponding to different sizes of Si sheet beams with single side constraint in example 2 of the MEMS pressure sensor based on topological photon high Q cavity, wherein the dotted line indicates Q value of 10 6 In (2), the solid line represents a Q value of 10 5 Is the case in (2); from the figure, it can be seen that the sensitivity of the Si sheet beam is independent of the Q value, and the larger the size, the higher the sensitivity. FIG. 8 is a graph showing the relationship between the lower limit of detection corresponding to different sizes of the single-side-constrained Si sheet beam in example 2, wherein the broken line indicates a Q value of 10 6 In (2), the solid line represents a Q value of 10 5 Is the case in (2); it can be seen from the figure that the detection limit of the Si sheet beam is related to the Q value, and the larger the size, the smaller the detection limit, and the higher the detection accuracy. Fig. 9 is a graph of sensitivity relationships corresponding to different Q values of Si sheet beams with single-side constraint in the second embodiment, wherein the dotted line represents the case of 50um on the side and the solid line represents the case of 20um on the side; as can be seen from the figure, the sensitivity of the Si sheet beam is independent of the Q value, and the larger the size, the higher the sensitivity. FIG. 10 shows a single-sided confined Si wafer in embodiment twoThe lower limit relation graph of detection corresponding to different Q values of the beam, wherein a dotted line represents the condition of 50um on side and a solid line represents the condition of 20um on side; as can be seen from the graph, the detection limit of the Si sheet beam is related to the Q value, and the detection limit is smaller as the size is larger, when the Si sheet beam with the length of 250um, the width of 250um and the thickness of 0.5um is selected, the detection limit of the sensitive element is 7.14X10 -4 Pa, sensitivity of 2.17X10 6 pm/kPa. From fig. 7, 8, 9, and 10, the following conclusions can be summarized: the sensitivity of the Si sheet beam is irrelevant to the Q value, the larger the size is, the higher the sensitivity is, the detection limit is relevant to the Q value (inversely proportional), and the larger the size is, the smaller the detection limit is. The higher the Q value, the larger the size, and the more excellent the sensor performance.
For the Si sheet beam sensing element of the sensor with circular hole array, two connection structures are proposed here: FIG. 11 is a schematic structural view of a wafer-shaped Si sheet beam connection base, wherein the rectangular base is made of silicon dioxide, the size of the rectangular base is 20um multiplied by 5um, and a cylindrical hole with a radius of 5um and a height of 5um is formed in the middle of the rectangular base; the radius of the wafer-shaped Si sheet beam is 5um, the thickness of the wafer-shaped Si sheet beam is 0.5um, the wafer-shaped Si sheet beam is horizontally embedded into the cylindrical hole, and the distance between the upper surface of the wafer-shaped Si sheet beam and the upper surface of the cuboid base table is 2.25um.
FIG. 12 is a schematic view of a square Si sheet beam connection base, wherein the rectangular base is made of silicon dioxide and has a size of 20um×20um×5um, and a rectangular hole with a length of 10um, a width of 10um and a height of 5um is formed in the rectangular base; the length of the square sheet-shaped Si sheet beam is 10um, the width of the square sheet-shaped Si sheet beam is 10um, the thickness of the square sheet-shaped Si sheet beam is 0.5um, the square sheet-shaped Si sheet beam is horizontally embedded into the cuboid holes, and the distance between the upper surface of the square sheet-shaped Si sheet beam and the upper surface of the cuboid base table is 2.25um.
The foregoing is merely an example of the present invention and is not limited to the disclosure of the embodiment and the accompanying drawings. The description of this implementation is only intended to help understand the method of the invention and its core ideas; also, as will occur to those of ordinary skill in the art upon reading the teachings of the present disclosure, the present disclosure should not be construed as limited to the embodiments and applications described herein. Various obvious modifications thereof are within the scope of the present invention without departing from the spirit of the method and the scope of the claims.
Claims (1)
1. MEMS pressure sensor based on topological photon high Q chamber, including 1 Si sheet roof beam, and this Si sheet roof beam is connected its characterized in that with the base station: the base station is made of silicon dioxide; the Si sheet beam is a sequential photon crystal plate; the photonic crystal plate is provided with a periodic circular hole array;
the period of the periodic circular hole array is 519.25nm, and the radius of the circular holes is 175nm;
the photonic crystal plate is a positive polygon, and the thickness of the positive polygon is 0.5um;
the side length of the regular polygon is 4 and the side length range is 20 um-250 um;
the Si sheet beam is square and the constraint is four-side constraint;
the relation between the thickness Z of the Si sheet beam and the detection lower limit Y is as follows:
Y＝0.5625Z 2 -0.2457Z+0.0348；
and Z is um and Y is Pa;
the relation between the Si sheet Liang Bianchang X and the detection lower limit Y is: y= 816163X -3.002 The method comprises the steps of carrying out a first treatment on the surface of the X is um, and the detection lower limit Y is Pa;
a cuboid hole is formed in the middle of the base station; the square Si sheet beam is horizontally embedded into the cuboid hole;
the MEMS pressure sensor based on the topological photon high Q cavity is connected with the following working process:
step 1, restraining Si sheet beams of the MEMS pressure sensor in a cuboid base station;
step 2, an optical fiber is connected to the upper part of the cuboid base station;
step 3, connecting the optical fiber with an optical circulator;
step 4, connecting the optical circulator with a spectrometer;
step 5, when the detected environmental pressure changes, the Si sheet beam deforms;
step 6, displaying a pressure value corresponding to the deformation of the Si sheet beam on a spectrometer;
so far, from step 1 to step 6, the testing pressure connection and the testing process of the MEMS pressure sensor based on the topological photon high Q cavity are completed.
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