CN113625525B - Photomask and method for manufacturing photomask - Google Patents
Photomask and method for manufacturing photomask Download PDFInfo
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- CN113625525B CN113625525B CN202110906700.7A CN202110906700A CN113625525B CN 113625525 B CN113625525 B CN 113625525B CN 202110906700 A CN202110906700 A CN 202110906700A CN 113625525 B CN113625525 B CN 113625525B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Abstract
The application discloses a photomask and a preparation method of the photomask, which are used for avoiding the condition that the photomask is scrapped and cannot be used due to failure of destructive processing of the photomask, and saving cost. The embodiment of the application provides a photomask, the photomask includes: a first substrate comprising: the first surface and the second surface are opposite, a first side surface connecting the first surface and the second surface, and a containing space opening at the first side surface; the second substrate is arranged in the accommodating space, and a pixel field is formed in the second substrate.
Description
Technical Field
The present disclosure relates to the field of photomasks, and in particular, to a photomask and a method for manufacturing the photomask.
Background
In the prior art, a critical dimension control (Critical Dimension Control, CDC) technique is adopted to drive pixels (pixels) into a mask substrate to change the light transmittance of the mask substrate, thereby improving the critical dimension and the critical dimension uniformity of the mask. However, the CDC technique is equivalent to performing a destructive process on the mask substrate, and the destructive process is irreversible, so that the whole mask cannot be used and is scrapped due to the failure of the process of driving the pixel, which is not beneficial to reducing the manufacturing cost of the mask. The number of times of driving pixels on the mask substrate is limited, and pixels cannot be driven infinitely.
Disclosure of Invention
The embodiment of the application provides a photomask and a preparation method of the photomask, which are used for avoiding the condition that the photomask is scrapped and cannot be used due to failure of destructive processing of the photomask, and saving the cost.
The embodiment of the application provides a photomask, the photomask includes:
a first substrate comprising: the first surface and the second surface are opposite, a first side surface connecting the first surface and the second surface, and a containing space opening at the first side surface;
the second substrate is arranged in the accommodating space, and a pixel field is formed in the second substrate.
In some embodiments, the receiving space comprises: a third surface and a fourth surface disposed opposite and parallel to the first surface;
the second substrate has a fifth surface adjacent to the third surface and a sixth surface adjacent to the fourth surface;
the third surface is provided with a first alignment structure, and the fifth surface is provided with a second alignment structure; and/or the fourth surface is provided with a first alignment structure, and the sixth surface is provided with a second alignment structure;
the first alignment structure is aligned with the second alignment structure, and the shape of the first alignment structure is matched with that of the second alignment structure.
In some embodiments, one of the first and second alignment structures includes a plurality of grooves extending in a first direction and aligned in a second direction, and the other of the first and second alignment structures includes a plurality of protrusions extending in the first direction and aligned in the second direction;
the second direction is parallel to the first side surface with the accommodating space opening, and the second direction is intersected with the first direction.
In some embodiments, in the third direction, a ratio of a thickness of the accommodating space to a thickness of the first substrate is 1:3, a step of;
wherein the third direction is perpendicular to the first surface.
In some embodiments, in the third direction, the thickness of the second substrate is equal to the thickness of the accommodating space.
In some embodiments, a ratio of a width of the accommodating space in the first direction to a width of the first substrate in the first direction is greater than 80%;
the ratio of the width of the accommodating space in the second direction to the width of the first substrate in the second direction is more than 80%.
In some embodiments, the photomask further comprises:
the shading layer is positioned on one side of the first surface of the first substrate and comprises shading patterns.
The preparation method of the photomask provided by the embodiment of the disclosure comprises the following steps:
preparing a first substrate with a containing space; wherein the first substrate comprises: the first surface and the second surface are opposite, and a first side surface connecting the first surface and the second surface, and the accommodating space is opened on the first side surface;
preparing a second substrate and forming a pixel field in the second substrate;
the second substrate is placed in the accommodating space.
In some embodiments, while preparing the accommodating space, further comprising:
forming a first alignment structure on the third surface and/or the fourth surface of the accommodating space;
the preparing of the second substrate specifically includes:
preparing a second substrate with a second alignment structure on the fifth surface and/or the sixth surface; the shape of the second alignment structure is matched with that of the first alignment structure.
In some embodiments, one of the first and second alignment structures includes a plurality of grooves extending in a first direction and aligned in a second direction, and the other of the first and second alignment structures includes a plurality of protrusions extending in the first direction and aligned in the second direction; the second direction is parallel to the first side surface and the first surface with the accommodating space opening, and the second direction is intersected with the first direction;
placing the second substrate in the accommodating space, specifically including:
the protrusion and the groove are aligned, and the second substrate is pushed to the accommodating space along the first direction.
In some embodiments, after forming the first substrate having the accommodating space, the method further includes:
a shading layer is formed on the first surface or the second surface of the first substrate, and a pattern of the shading layer is formed on the shading layer by adopting a patterning process.
According to the photomask and the preparation method of the photomask, the first substrate is provided with the accommodating space for accommodating the second substrate, and the second substrate is placed in the accommodating space and can be taken out from the accommodating space, so that even if the second substrate cannot be used due to failure of the process of forming the pixel field by the second substrate, the first substrate can still be used continuously, and therefore the second substrate can be replaced without scrapping the first substrate, and the manufacturing cost of the photomask can be saved. The photomask provided by the embodiment of the application can also replace the second substrate according to the requirement, so that the pixel field of the second substrate meets the requirement of exposure critical dimension.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a photomask according to an embodiment of the present disclosure;
fig. 2 is a top view of a first substrate according to an embodiment of the present disclosure;
FIG. 3 is a cross-sectional view of a first substrate according to an embodiment of the present disclosure;
FIG. 4 is a cross-sectional view of AA' of FIG. 2 according to one embodiment of the present application;
FIG. 5 is a schematic diagram of another photomask according to an embodiment of the present disclosure;
FIG. 6 is a cross-sectional view of another first substrate provided in an embodiment of the present application;
FIG. 7 is a cross-sectional view of a second substrate according to an embodiment of the present disclosure;
FIG. 8 is a schematic diagram of a structure of another photomask according to an embodiment of the present disclosure;
FIG. 9 is a cross-sectional view of yet another first substrate provided in an embodiment of the present application;
FIG. 10 is a cross-sectional view of another second substrate provided in an embodiment of the present application;
FIG. 11 is a schematic structural diagram of another photomask according to an embodiment of the present disclosure;
FIG. 12 is a cross-sectional view of yet another first substrate provided in an embodiment of the present application;
FIG. 13 is a cross-sectional view of yet another second substrate provided in an embodiment of the present application;
FIG. 14 is a schematic view of a structure of a photomask according to another embodiment of the present disclosure;
FIG. 15 is a cross-sectional view of yet another first substrate provided in an embodiment of the present application;
FIG. 16 is a cross-sectional view of yet another second substrate provided in an embodiment of the present application;
FIG. 17 is a schematic diagram of a structure of a photomask according to another embodiment of the present disclosure;
FIG. 18 is a cross-sectional view of yet another first substrate provided in an embodiment of the present application;
FIG. 19 is a cross-sectional view of yet another second substrate provided in an embodiment of the present application;
FIG. 20 is a schematic diagram of a structure of a photomask according to another embodiment of the present disclosure;
FIG. 21 is a cross-sectional view of yet another first substrate provided in an embodiment of the present application;
FIG. 22 is a cross-sectional view of yet another second substrate provided in an embodiment of the present application;
FIG. 23 is a schematic structural view of another photomask according to an embodiment of the present disclosure;
FIG. 24 is a schematic view of a structure of a photomask according to another embodiment of the present disclosure;
FIG. 25 is a schematic diagram of a structure of a photomask according to another embodiment of the present disclosure;
fig. 26 is a flow chart of a method for manufacturing a photomask according to an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present application. It will be apparent that the described embodiments are some, but not all, of the embodiments of the present application. And embodiments and features of embodiments in this application may be combined with each other without conflict. All other embodiments, which can be made by one of ordinary skill in the art without the benefit of the present disclosure, are intended to be within the scope of the present application based on the described embodiments.
Unless otherwise defined, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this application belongs. The terms "first," "second," and the like, as used herein, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect.
It should be noted that the dimensions and shapes of the various figures in the drawings do not reflect true proportions, and are intended to illustrate the present application only. And the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout.
The embodiment of the application provides a photomask, as shown in fig. 1, 2, 3 and 4, the photomask includes:
the first substrate 1 includes: a first surface 3 and a second surface 4 opposite to each other, a first side 5 connecting the first surface 3 and the second surface 4, and a receiving space 6 opened at the first side 5;
the second substrate 2 is disposed in the accommodating space 6, and a pixel field 14 is formed in the second substrate 2.
It should be noted that, in the photomask provided in the embodiment of the present application, the second substrate is disposed in the accommodating space: the second substrate is not fixedly connected with the first substrate in the accommodating space, so that the second substrate can be taken out of the accommodating space.
In particular embodiments, the mask provided by embodiments of the present application may be applied to an exposure process to transfer a pattern of the mask to an exposed film.
In particular implementations, as shown in fig. 1, the pixel field 14 includes a plurality of pixels 15.
In the embodiment, a critical dimension control (Critical Dimension Control, CDC) technique may be used to drive in a plurality of pixels on the second substrate to form a pixel field. The transmittance of the second substrate changes in the region where the pixel is driven. When the photomask is used for exposure, light incident to the second substrate is scattered at the pixel, so that part of scattered light does not reach the film layer to be exposed, the intensity of the light reaching the film layer to be exposed can be changed, and the line width of a pattern formed after the film layer to be exposed is exposed can be changed.
The photomask provided by the embodiment of the application, the first substrate is provided with the accommodating space for accommodating the second substrate, and the second substrate is arranged in the accommodating space and can be taken out from the accommodating space, so that even if the second substrate cannot be used due to failure of the manufacturing process of forming the pixel field by the second substrate, the first substrate can still be used continuously, and therefore, the second substrate can be replaced without scrapping the first substrate, and the manufacturing cost of the photomask can be saved. The photomask provided by the embodiment of the application can also replace the second substrate according to the requirement, so that the pixel field of the second substrate meets the requirement of the photomask on exposure critical dimension.
It should be noted that fig. 2 is a top view of the first substrate, fig. 3 is a cross-sectional view of the first substrate on a plane where the first side surface having the opening of the accommodating space is located, and fig. 4 is a cross-sectional view along AA' in fig. 2.
It should be noted that fig. 1, 3, and 4 illustrate that the first substrate includes a receiving space. In the specific implementation, a plurality of accommodating spaces which are opened at the first side surface can be arranged as required. The plurality of accommodating spaces can be arranged in a lamination manner along the direction vertical to the first surface, and can be sequentially arranged along the direction of the line and the first surface.
In some embodiments, as shown in fig. 1, 3, and 4, the accommodating space 6 has: a third surface 7 and a fourth surface 8, which are arranged opposite and each parallel to the first surface 3, and a second side 9 connecting the third surface 7 and the fourth surface 8.
In some embodiments, the second substrate includes a fifth surface adjacent to the third surface and a sixth surface adjacent to the fourth surface.
In some embodiments, as shown in fig. 5-22, the third surface 7 has a first alignment structure 12 and the fifth surface 10 has a second alignment structure 13; and/or the fourth surface 8 has a first alignment structure 12 and the sixth surface 11 has a second alignment structure 13;
in the accommodating space 6, the first alignment structure 12 is aligned with the second alignment structure 13, and the shape of the first alignment structure 12 matches the shape of the second alignment structure 13.
In fig. 5, 6, 7, 14, 15, and 16, the third surface 7 has a first alignment structure 12, and the fifth surface 10 has a second alignment structure 13. In fig. 8, 9, 10 and 17, 18 and 19, the fourth surface 8 has a first alignment structure 12, and the sixth surface 11 has a second alignment structure 13. In fig. 11, 12, 13 and 20, 21 and 22, the third surface 7 has a first alignment structure 12, the fifth surface 10 has a second alignment structure 13, and the fourth surface 8 has a first alignment structure 12, and the sixth surface 11 has a second alignment structure 13.
It should be noted that, the matching of the shape of the first alignment structure with the shape of the second alignment structure means: when the first alignment structure and the second alignment structure are aligned, the space surrounded by the first alignment structure can accommodate the second alignment structure, or the space surrounded by the second alignment structure can accommodate the first alignment structure. In some embodiments, after the first alignment structure and the second alignment structure are aligned, the first alignment structure and the second alignment structure are spliced into a complete pattern.
According to the photomask provided by the embodiment of the application, when the second substrate is placed in the accommodating space, the first alignment structure and the second alignment structure with the matched shapes are aligned, so that the second substrate can be prevented from moving in the accommodating space, and the exposure yield can be improved.
In some embodiments, as shown in fig. 5-22, one of the first alignment structure 12 and the second alignment structure 13 includes a plurality of grooves 16 extending in a first direction Y aligned in a second direction X, and the other of the first alignment structure 12 and the second alignment structure 13 includes a plurality of protrusions 17 extending in the first direction Y aligned in the second direction X;
as shown in fig. 2, the second direction X is parallel to the first side 5 with the opening of the accommodating space 6, and the second direction X intersects with the first direction Y.
In some embodiments, the second direction X is perpendicular to the first direction Y. In fig. 5 to 22, the first direction Y is a direction perpendicular to a plane in which the second direction X and the third direction Z are located. Wherein the third direction Z is perpendicular to the first surface 3 of the first substrate 1.
It should be noted that fig. 5 to fig. 13 illustrate an example in which the first alignment structure 12 includes a plurality of grooves 16 and the second alignment structure 13 includes a plurality of protrusions 17, and fig. 14 to fig. 22 illustrate an example in which the first alignment structure 12 includes a plurality of protrusions 17 and the second alignment structure 13 includes a plurality of grooves 16.
The photomask provided by the embodiment of the application is characterized in that a plurality of grooves which extend along the first direction and are arranged along the second direction are formed on the surface of the accommodating space adjacent to the second substrate, a plurality of protrusions which extend along the first direction and are arranged along the second direction are formed on the second substrate, or a plurality of protrusions which extend along the first direction and are arranged along the second direction are formed in the accommodating space, a plurality of grooves which extend along the first direction and are arranged along the second direction are formed on the second substrate, and a plurality of matched tracks are formed on the accommodating space and the second substrate. Therefore, after the first alignment structure and the second alignment structure are aligned, the second substrate is movably arranged in the accommodating space along the extending direction of the protrusions and the grooves, and the protrusions and the grooves are aligned and matched so as to avoid the movement of the second substrate in the accommodating space, and further, the exposure yield of exposure by using the photomask can be improved.
In some embodiments, as shown in fig. 5 to 22, the projections 17 and the grooves 16 have an arc shape in a cross section parallel to the second direction X.
Of course, in some embodiments, the shape of the cross section of the protrusion 17, the groove 16 parallel to the second direction X may also be triangular or other shape.
In some embodiments, the spacing between the plurality of protrusions is equal and the spacing between the plurality of grooves is equal.
In some embodiments, when the first alignment structure includes a protrusion, a length of the protrusion in the first direction may be, for example, equal to a depth of the receiving space in the first direction; the second alignment structure may include a groove having a length in the first direction that is, for example, equal to a width of the second substrate in the first direction.
In some embodiments, when the first alignment structure includes a groove, a length of the groove in the first direction may be equal to a depth of the accommodating space in the first direction, for example; when the second alignment structure includes a protrusion, the length of the protrusion in the first direction may be equal to the width of the second substrate in the first direction, for example.
In the embodiment, as shown in fig. 2, the width of the first substrate 1 in the second direction X is h1, and the width of the first substrate 1 in the first direction Y is h2. The width of the accommodating space 6 in the second direction X is h3, and the width of the accommodating space 6 in the first direction Y is h4.
In some embodiments, a ratio of a width h3 of the accommodating space in the second direction X to a width h1 of the first substrate in the second direction X is greater than 80%;
the ratio of the width h4 of the accommodating space in the first direction Y to the width h2 of the first substrate in the first direction Y is more than 80%.
In this way, the first substrate is prevented from being easily damaged due to the oversized accommodating space formed in the first substrate.
In a specific implementation, for example, the width h4 of the accommodating space in the first direction Y is 26 millimeters (mm), and the width h3 of the accommodating space in the second direction X is 33mm. The width h1 of the first substrate in the second direction X may be, for example, 32mm, and the width h2 of the first substrate in the first direction Y may be, for example, 41mm.
In particular, as shown in fig. 4, the total thickness of the first substrate 1 in the third direction Z is h5, and the thickness of the accommodating space 6 in the third direction Z is h6.
It should be noted that, when the third surface and/or the fourth surface of the accommodating space has the first alignment structure, the thickness of the accommodating space in the third direction Z refers to the thickness of the accommodating space in the third direction Z, where the first alignment structure area is not disposed.
In some embodiments, the ratio of the thickness h6 of the accommodating space in the third direction Z to the total thickness h5 of the first substrate in the third direction Z is 1:3.
in some embodiments, in the third direction Z, a distance between the first surface of the first substrate and the third surface of the receiving space is equal to a distance between the second surface of the first substrate and the fourth surface of the receiving space, and the distance between the first surface of the first substrate and the third surface of the receiving space receives a thickness h6 of the receiving space.
It should be noted that fig. 1, fig. 5, fig. 8, fig. 11, fig. 14, fig. 17, and fig. 20 are all exemplified by the thickness of the second substrate in the third direction Z being equal to the thickness of the accommodating space in the third direction Z, the width of the second substrate in the second direction X being equal to the width of the accommodating space in the second direction X, and the width of the second substrate in the first direction Y being equal to the width of the accommodating space in the first direction Y.
In some embodiments, the thickness of the second substrate in the third direction Z is less than or equal to the thickness h6 of the accommodating space in the third direction Z.
When the fifth surface and/or the sixth surface of the second substrate has the second alignment structure, the thickness of the second substrate in the third direction Z refers to the thickness of the second substrate in the third direction Z, where the second alignment structure region is not disposed.
In some embodiments, in the third direction, the thickness of the second substrate is equal to the thickness of the accommodating space.
Of course, in the implementation, the thickness of the second substrate may be smaller than the thickness of the accommodating space in consideration of the process error. For example, the difference between the thickness of the second substrate and the thickness of the accommodating space is less than 10% of the thickness of the accommodating space.
In some embodiments, the width of the second substrate in the second direction X is less than or equal to the width of the accommodating space in the second direction X; the width of the second substrate in the first direction Y is smaller than or equal to the width of the accommodating space in the first direction Y.
In a specific implementation, the width of the second substrate in the first direction Y may be greater than the width of the accommodating space in the first direction Y, or may be equal to the width of the accommodating space in the first direction Y, or may be less than the width of the accommodating space in the first direction Y.
As shown in fig. 23, when the width of the second substrate 2 in the first direction Y may be greater than the width of the accommodating space 6 in the first direction Y, after the second substrate 2 is inserted into the accommodating space 6, a portion of the second substrate 2 is located outside the accommodating space 6, so as to facilitate the extraction of the second substrate 2 in the accommodating space 6.
In some embodiments, the width of the pixel in the first direction Y is 1 micron and the thickness of the pixel in the third direction Z is 3 microns.
In some embodiments, the photomask further comprises:
the shading layer is positioned on one side of the first surface or the second surface of the first substrate and comprises shading patterns.
As shown in fig. 24 and 25, the light shielding layer 18 is located on one side of the first surface 3 of the first substrate 1.
In some embodiments, the mask includes a light shielding layer in fig. 24. In specific implementations, the material of the light shielding layer includes, for example: chromium (Cr) or chromium oxide (CrO) x )。
In some embodiments, in fig. 25, the light shielding layer includes: the first light shielding layer 20 and the second light shielding layer 21 are stacked. The first light shielding layer 20 is located on a side of the second light shielding layer 21 close to the first substrate 1.
In specific implementation, the material of the first light shielding layer includes, for example: the material of the second light shielding layer includes, for example, molybdenum silicon oxynitride (MoSiON): cr or CrO x 。
In some embodiments, as shown in fig. 24 and 25, the mask further includes: and a photoresist layer 19 on a side of the light shielding pattern facing away from the first substrate.
In some embodiments, the first substrate and the second substrate are light-transmitting substrates, and the material of the light-transmitting substrates may be quartz or glass, for example.
Based on the same inventive concept, the embodiment of the present disclosure further provides a method for manufacturing a photomask, as shown in fig. 26, including:
s101, preparing a first substrate with a containing space; wherein the first substrate comprises: the first surface and the second surface are opposite, and a first side surface connecting the first surface and the second surface, and the accommodating space is opened on the first side surface;
s102, preparing a second substrate and forming a pixel field in the second substrate;
s103, placing the second substrate in the accommodating space.
According to the photomask ratio method provided by the embodiment of the application, the first substrate with the accommodating space is formed, the accommodating space can accommodate the second substrate, the second substrate for forming the pixel field subsequently can be placed in the accommodating space and also can be taken out from the accommodating space, so that even if the second substrate cannot be used due to failure of the manufacturing process of forming the pixel field by the second substrate, the second substrate is only required to be replaced, the first substrate is not required to be scrapped, and the photomask manufacturing cost can be saved. And the second substrate can be replaced as required to make the pixel field of the second substrate meet the requirement of exposure critical dimension.
In some embodiments, forming the pixel field at the second substrate specifically includes:
and driving a plurality of pixels into the second substrate by adopting CDC technology to form a pixel field.
For example, a pixel field is formed by driving a plurality of pixels into a second substrate by a CDC tool using a femtosecond laser.
In some embodiments, while forming the accommodating space, the method further includes:
forming a first alignment structure on the third surface and/or the fourth surface of the accommodating space;
the preparing of the second substrate specifically includes:
preparing a second substrate with a second alignment structure on the fifth surface and/or the sixth surface; the shape of the second alignment structure is matched with that of the first alignment structure.
In some embodiments, one of the first and second alignment structures includes a plurality of grooves extending in a first direction and aligned in a second direction, and the other of the first and second alignment structures includes a plurality of protrusions extending in the first direction and aligned in the second direction; the first direction is parallel to the direction of the opening of the accommodating space pointing to the second side surface, and the second direction is crossed with the first direction;
placing the second substrate in the accommodating space, specifically including:
the protrusion and the groove are aligned, and the second substrate is pushed to the accommodating space along the first direction.
It should be noted that, the specific arrangement of the protrusions and the grooves can be referred to the related embodiments of the photomask provided in the present application, and will not be described herein again.
In some embodiments, after forming the first substrate having the accommodating space, the method further includes:
a shading layer is formed on the first surface or the second surface of the first substrate, and patterning is adopted to form a pattern of the shading layer.
In particular, the light shielding layer may be formed before the second substrate is placed in the accommodating space, or may be formed after the second substrate is placed in the accommodating space.
In some embodiments, a light shielding layer is formed on the first surface or the second surface of the first substrate, and patterning is used to form a pattern of the light shielding layer, specifically including:
forming a light shielding layer on the first surface or the second surface of the first substrate;
forming a photoresist layer on one side of the shading layer, which is away from the first substrate;
forming a pattern of the photoresist by adopting an exposure and development process on the photoresist layer;
and forming a pattern of the shading layer by adopting an etching process on the shading layer.
In summary, according to the photomask and the method for manufacturing the photomask provided by the embodiments of the present application, the first substrate has the accommodating space for accommodating the second substrate, and the second substrate is disposed in the accommodating space and can be taken out from the accommodating space, so that even if the second substrate cannot be used due to a failure in the process of forming the pixel field on the second substrate, the first substrate can still be used continuously, so that the first substrate is not scrapped only for replacing the second substrate, and the manufacturing cost of the photomask can be saved. The photomask provided by the embodiment of the application can also replace the second substrate according to the requirement, so that the pixel field of the second substrate meets the requirement of exposure critical dimension.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present application without departing from the spirit or scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims and the equivalents thereof, the present application is intended to cover such modifications and variations.
Claims (9)
1. A photomask, the photomask comprising:
a first substrate comprising: the first surface and the second surface are opposite, a first side surface connecting the first surface and the second surface, and a containing space opening on the first side surface;
the second substrate is arranged in the accommodating space, and a pixel field is formed in the second substrate;
the photomask further includes:
a light shielding layer located at one side of the first surface or the second surface of the first substrate, comprising a light shielding pattern;
the pixel field is formed by driving a plurality of pixels into the second substrate by adopting a critical dimension control technology, and the light transmittance of the second substrate is changed in the region driven into the pixels so that the light incident to the second substrate is scattered at the pixels.
2. The mask of claim 1, wherein the receiving space comprises: a third surface and a fourth surface disposed opposite and parallel to the first surface;
the second substrate has a fifth surface adjacent to the third surface and a sixth surface adjacent to the fourth surface;
the third surface is provided with a first alignment structure, and the fifth surface is provided with a second alignment structure; and/or the fourth surface is provided with a first alignment structure, and the sixth surface is provided with a second alignment structure;
the first alignment structure is aligned with the second alignment structure, and the shape of the first alignment structure is matched with that of the second alignment structure.
3. The mask of claim 2 wherein one of the first alignment structure and the second alignment structure comprises a plurality of grooves extending in a first direction and aligned in a second direction; the other of the first alignment structure and the second alignment structure includes a plurality of protrusions extending in the first direction and aligned in the second direction;
wherein the second direction is parallel to the first side surface and the first surface having an opening, and the second direction intersects the first direction.
4. A photomask according to any of claims 1 to 3, wherein in the third direction, the ratio of the thickness of the accommodating space to the thickness of the first substrate is 1:3, a step of;
wherein the third direction is perpendicular to the first surface.
5. The mask of claim 4, wherein in the third direction, a thickness of the second substrate is equal to a thickness of the accommodating space.
6. The mask of claim 4, wherein a ratio of a width of the accommodating space in a first direction to a width of the first substrate in the first direction is greater than 80%;
the ratio of the width of the accommodating space in the second direction to the width of the first substrate in the second direction is more than 80%.
7. A method of making a photomask, the method comprising:
preparing a first substrate with a containing space; wherein the first substrate comprises: the first surface and the second surface are opposite, and a first side surface connecting the first surface and the second surface, and the accommodating space is provided with an opening on the first side surface;
preparing a second substrate and forming a pixel field in the second substrate;
placing the second substrate in the accommodating space;
after the first substrate with the accommodating space is formed, the method further comprises:
forming a light shielding layer on one side of the first surface or one side of the second surface of the first substrate, and patterning the light shielding layer to form a pattern of the light shielding layer;
forming a pixel field at the second substrate specifically includes:
driving a plurality of pixels into the second substrate by adopting a critical dimension control technology to form a pixel field; the transmittance of the second substrate is changed in a region where the pixel is driven, so that light incident to the second substrate is scattered at the pixel.
8. The method of claim 7, wherein the receiving space comprises: a third surface and a fourth surface disposed opposite and parallel to the first surface; the second substrate has a fifth surface adjacent to the third surface and a sixth surface adjacent to the fourth surface; the preparation of the accommodating space also comprises the following steps:
forming a first alignment structure on the third surface and/or the fourth surface of the accommodating space;
the preparing the second substrate specifically includes:
preparing a second substrate with a second alignment structure on the fifth surface and/or the sixth surface; the shape of the second alignment structure is matched with that of the first alignment structure.
9. The method of claim 8, wherein one of the first alignment structure and the second alignment structure comprises a plurality of grooves extending in a first direction and aligned in a second direction, and the other of the first alignment structure and the second alignment structure comprises a plurality of protrusions extending in the first direction and aligned in the second direction; wherein the second direction is parallel to the first side surface and the first surface with the accommodating space opening, and the second direction is intersected with the first direction;
placing the second substrate in the accommodating space specifically includes:
and aligning the protrusion with the groove and pushing the second substrate to the accommodating space along the first direction.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110906700.7A CN113625525B (en) | 2021-08-09 | 2021-08-09 | Photomask and method for manufacturing photomask |
| PCT/CN2021/116875 WO2023015638A1 (en) | 2021-08-09 | 2021-09-07 | Photomask and method for preparing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202110906700.7A CN113625525B (en) | 2021-08-09 | 2021-08-09 | Photomask and method for manufacturing photomask |
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| Publication Number | Publication Date |
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| CN113625525A CN113625525A (en) | 2021-11-09 |
| CN113625525B true CN113625525B (en) | 2023-04-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202110906700.7A Active CN113625525B (en) | 2021-08-09 | 2021-08-09 | Photomask and method for manufacturing photomask |
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| CN (1) | CN113625525B (en) |
| WO (1) | WO2023015638A1 (en) |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5474865A (en) * | 1994-11-21 | 1995-12-12 | Sematech, Inc. | Globally planarized binary optical mask using buried absorbers |
| JP2002011589A (en) * | 2000-06-28 | 2002-01-15 | Hitachi Ltd | Mask for laser beam machining, method and device for manufacturing the same, laser beam ablation machining device, and image display device made by the mask |
| US6545829B1 (en) * | 2000-08-21 | 2003-04-08 | Micron Technology, Inc. | Method and device for improved lithographic critical dimension control |
| US6854106B2 (en) * | 2002-08-29 | 2005-02-08 | Micron Technology, Inc. | Reticles and methods of forming and using the same |
| KR100658762B1 (en) * | 2005-11-30 | 2006-12-15 | 삼성에스디아이 주식회사 | Mask frame assembly for deposition and depositing method using the same |
| EP2351871B1 (en) * | 2008-10-21 | 2016-06-15 | Ulvac, Inc. | Mask and method for forming film using this mask |
| KR102240761B1 (en) * | 2015-01-29 | 2021-04-15 | 삼성디스플레이 주식회사 | Variable mask |
| CN105607410A (en) * | 2015-12-30 | 2016-05-25 | 梁旭 | Chromium-free photoetching plate |
| DE102017123114B3 (en) * | 2017-10-05 | 2019-01-10 | Carl Zeiss Sms Ltd. | Method for correcting the critical dimension uniformity of a photomask for semiconductor lithography |
| CN111221221A (en) * | 2019-11-28 | 2020-06-02 | 上海华力微电子有限公司 | Photomask identification system, identification method thereof and photoetching equipment |
| CN111650817A (en) * | 2020-05-13 | 2020-09-11 | 王传祥 | Semiconductor combined mask exposure device and use method |
-
2021
- 2021-08-09 CN CN202110906700.7A patent/CN113625525B/en active Active
- 2021-09-07 WO PCT/CN2021/116875 patent/WO2023015638A1/en unknown
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| WO2023015638A1 (en) | 2023-02-16 |
| CN113625525A (en) | 2021-11-09 |
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