CN100570480C - The method of designing mask - Google Patents
The method of designing mask Download PDFInfo
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- CN100570480C CN100570480C CNB2005100893286A CN200510089328A CN100570480C CN 100570480 C CN100570480 C CN 100570480C CN B2005100893286 A CNB2005100893286 A CN B2005100893286A CN 200510089328 A CN200510089328 A CN 200510089328A CN 100570480 C CN100570480 C CN 100570480C
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Abstract
The invention provides the method for a designing mask (mask).At first, comprise that the main figure of at least one strip pattern forms on mask substrate, and transfer device (shift feature) is attached to an end of strip pattern.Can be at the line end of main figure and the final critical dimension between the line end (critical dimension) by phase-shift phase (phase shift) or the transmittance (optical transmission) of adjusting transfer device, or both adjust simultaneously with optimization.Therefore can improve the phenomenon of pulling back (pullback) of strip pattern tail end in the main figure.
Description
Technical field
The present invention relates to a kind of method of designing mask, particularly relate to a kind of phase-shift phase and transmittance of adjusting mask pattern simultaneously, or only adjust wherein method with designing mask.
Background technology
Since the fast development of integrated circuit technique, assembly dwindle with integrated be a general trend.In the process of making integrated circuit, photoetching making technology (photolithographic process) has decisive influence for the basic operation characteristic of making assembly.When integrated degree continued to improve, distance separating can shorten synchronously between the size of assembly and the assembly.Therefore can cause some deviation of pattern of utilizing photoetching making technology to be converted to silicon.For example, the tail end of line style pattern is pulled back in (shortening) or the pattern sharp corner by circular arcization.When less relatively or degree of integration was higher relatively when size of components, above-mentioned deviation had great negative effect to integrated circuit.When pattern was converted to silicon, the shortening situation as if having above-mentioned deviation to cause at line style pattern tail end can cause reducing of pattern misregistration and manufacture craft space (processwindow, or manufacture craft window).
Be the fidelity (fidelity) of increase pattern transfer and the resolution of photoetching making technology, for example phase shifting mask (PSM) is developed with optical proximity correction method numerous technology such as (OPC).
The key concept of phase shifting mask is to add to put a phase shift layer (shiftlayer) between the contiguous hole on the mask pattern, to produce the light phase-shift phase of 180 degree.Phase shift layer can inverted phase and is caused interference, to strengthen the resolution of pattern on wafer.Phase shift layer can use specific thickness and refractive index to produce the phase-shift phases of 180 degree, so that eliminate the optical diffraction in contiguous hole, thereby increases exposure resolution ratio and improves the uniformity coefficient of assembly critical dimension (critical dimension).
Similarly, for critical dimension in the transfer of prevention mask pattern produces change, when making, mask can use the optical proximity correction method usually.Generally speaking, the optical proximity correction method is included in the figure corner and adds transversal (serif) or add upper ram pattern (hammerhead) with the circular arcization (rounding) that prevents the place, right angle or the phenomenon of pulling back (pullback) of line style pattern tail end at the original pattern end.
Yet, when the distance between critical dimension or contiguous line style pattern is contracted to a certain degree, add the line style pattern tail end of putting transversal and tup pattern or using traditional phase shifting mask can't effectively avoid pleasure the to see phenomenon of pulling back.
Summary of the invention
One of purpose of the present invention provides the method for design phase shifting mask, and the method is adjusted the phase-shift phase of additional transfer device and the characteristic of transmittance simultaneously, or only adjusts wherein one, with the phenomenon of pulling back of improvement line style pattern.Set the phase-shift phase or the transmittance of additional transfer device, make the line style pattern near intrinsic length, to provide semiconductor subassembly bigger manufacture craft space.
For reaching aforementioned or other advantage that purpose of the present invention is drawn, the method that the invention provides designing mask specifically presents and description widely at this.At first, form a main pattern on mask substrate, it comprises a flagpole pattern at least.An end of flagpole pattern adds a throw-over gear in pattern, adjusts wherein phase-shift phase and transmittance or only adjusts wherein one, so that the critical dimension optimization of line style pattern tail end.To 100 degree, the range of transmittance of throw-over gear simultaneously is about 60% to 100% at about 60 degree for the light phase difference of mask substrate and throw-over gear.Thus, figure after photoetching making technology conversion, flagpole pattern, line (line, i.e. anti-etching dose of district of light) or ditch (space, being unglazed anti-etching dose of district) the linear pattern tail end of the figure phenomenon of pulling back promptly alleviated, and the manufacture craft space of main figure has also increased.
It is exemplary that the details that the explanation of above-mentioned summary and following is got off is described, and explains for the invention of declaring right provides further.
Description of drawings
Listed accompanying drawing provides further instruction of the present invention, and becomes a joint of this instructions.The listed accompanying drawing embodiment of will demonstrating, and cooperate explanation to explain principle of the present invention.In the accompanying drawings:
Figure 1A is according in the preferred embodiment proposed by the invention, the top view of a shadow tone (halftone) phase shifting mask.
Figure 1B is the sectional view along I-I ' profile line among Figure 1A.
Fig. 2 is the combination of transmittance and phase-shift phase and the graph of a relation of critical dimension of patterns.
Fig. 3 A is the top view according to binary (binary) phase shifting mask in another preferred embodiment proposed by the invention.
Fig. 3 B is the sectional view along II-II ' profile line among Fig. 3 A.
10: the shadow tone phase shifting mask
100: shadow tone phase shifting mask substrate
102: main figure
102a, 102b: shadow tone phase shift layer
104: transport zone
104a: the ground floor material of transport zone
104b: the second layer material of transport zone
I-I ', II-II ': profile line
30: the binary phase shifting mask
300: binary phase shifting mask substrate
302: mask layer
304: transport zone
Embodiment
The preferred embodiment for the present invention below is described in detail in detail, and the conjunction with figs. explanation.In the narration of accompanying drawing and embodiment with the identical same or similar object of label indication.
Generally speaking, finish a photoetching making technology equipment needed thereby and comprise mask (reticle or photomask).Comprise in the mask and the corresponding pattern of integrated circuit one deck.When exposure, mask places between light source and the silicon.The light transmission clear glass that is produced by light source is projected on anti-etching dose of layer of light of silicon.So the pattern on the mask promptly is being transferred to after the development on anti-etching dose of layer of light.
Yet because the other factors the when refraction of light and interference and light penetration mask, the pattern after the transfer is twisted.For verily duplicating original pattern and distortion being minimized, the invention provides the method for making mask.The present invention utilizes a shadow tone phase shifting mask (PSM) or binary phase shifting mask to make required figure to make semiconductor.The pattern of mask comprises main figure, also comprises that at least one can be for improving the transport zone (being transfer device) that linear pattern shortens problem.By the phase-shift phase of controlling transport zone simultaneously and transmittance, or only control one of them, the line style pattern of flagpole pattern, line or ditch figure such as polysilicon gate promptly can be made by higher fidelity.
Figure 1A shows the top view of shadow tone phase shifting mask in the preferred embodiments of the present invention.Please refer to Fig. 1, in a preferred embodiment of the invention, in the shadow tone phase shifting mask 10, a shadow tone phase shift layer 102a, 102b are formed on the mask substrate 100.The pattern of shadow tone phase shift layer 102a, 102b is regarded as the main figure 102 on mask 10, to define the geometric figure of corresponding semiconductor subassembly material layer (materiallayer).One transport zone 104 is placed between the tail end opposite position of shadow tone phase shift layer 102a, 102b.The position of transport zone 104 is corresponding to the geometric ditch (being the critical dimension zone) of semiconductor subassembly material layer.Adjust the phase-shift phase and the transmittance of transport zone 104, or adjust one of them, promptly the tail end of may command (or shortening) phase shift layer 102a and 102b tail end opposite position is to tail end distance (being critical dimension).
The transmittance of certain material or layer is generally to weigh by illuminance (illumination) transmission quantity (number percent) of material or layer.Similarly, the transmittance of transport zone can be adjusted according to its phase-shift phase, cooperates tail end to the tail end critical dimension or spacing of main figure to decide.The transmittance of transport zone is for example about 60% to 100%, preferably between 80% to 100%.
Fig. 2 illustrates the tail end of circuit arrangement pattern to the graph of a relation of tail end critical dimension to the phase-shift phase of transmittance and transport zone.
Please refer to Fig. 2, if be 100% to be example with the transmittance of transport zone, when the phase-shift phase of transport zone is 90 when spending, tail end to tail end critical dimension obviously is about 0.21 micron.In this example, the tail end relative distance of two strips or line style pattern can be as small as about 0.21 micron.Yet if the phase-shift phase of transport zone is that 0 degree and transmittance are 100%, tail end to tail end critical dimension will be about 0.275 micron.In this example, transport zone is considered as not existing, only there is main pattern to be formed on the 0 transparent degree phase mask substrate.Therefore, the distance of two relative line illustration case tail ends is about 0.275 micron.This two example relatively, additional transfer device (transport zone) can cause small distance (tail end is to tail end critical dimension), the phenomenon of pulling back of (less) after its expression line style pattern tail end improves.
Therefore, the present invention proposes except that the phase-shift phase of transport zone, and transmittance also can be adjusted according to the critical dimension of main figure or the demand of spacing (pitch).The best of breed of phase-shift phase and transmittance or the best adjusting range of one of them can be with reference to figure 2.When the light phase difference of substrate and transport zone about 60 degree to the transmittance of 100 degree and transport zone about 60% to 100% the time, under both synergies tail end to tail end critical dimension approximately less than 0.255 micron.
Figure 1B is illustrated among Figure 1A the section along I-I ' profile line.Shown in Figure 1B, shadow tone phase shift layer 102a or 102b for example are formed on the mask substrate 100 to deposit (deposition) or to spatter the mode of crossing (sputtering).Mask substrate 100 for example can transparent material such as quartz or glass make, and shadow tone phase shift layer 102a and 102b for example are preferably 6% to 8% MoSizOxNy or chromium oxide (chromium oxide) and make to have transmittance.The transmittance of shadow tone phase shift layer 102a, 102b is 4% to 15%, is preferably to be less than 10%.According to the preferred embodiments of the present invention, transport zone 104 can comprise the transmittance of a semi-transparent or translucent ground floor material 104a with the control transport zone, and other comprises a transparent second layer material 104b to adjust the phase-shift phase of transport zone.The material of the ground floor and the second layer selects to depend on transmittance or the phase-shift phase that transport zone is required.
Another program of the present invention is for utilizing a binary (binary) phase shifting mask.Fig. 3 A is illustrated in the top view of the binary phase shifting mask in another preferred embodiment of the present invention.Fig. 3 B then is illustrated among Fig. 3 A the sectional view along profile line II-II '.Please refer to Fig. 3 A and Fig. 3 B, binary phase shifting mask 30 comprises an opaque mask layer 302, and this mask layer 302 is formed on the mask substrate 100.The pattern of mask layer 302 is considered as main figure on the mask 30, and it defines corresponding geometric figure on the material layer of semiconductor subassembly.One transport zone 304 is configured in an end of mask layer 302, and the position of transport zone 304 is corresponding to the ditch between reference point and the geometric figure in the material layer of semiconductor subassembly (being the critical dimension zone).
Same as above, transport zone 304 for example can import the phase-shift phase of an X degree to the light by phase shifting mask 30.That is to say that substrate 300 (being considered as 0 degree phase place) is X degree with the light phase difference of transport zone 304.The scope of X degree is for example spent to 90 degree about 60, preferably between 80 to 100 degree.Therefore, the phase-shift phase of transport zone 304 and transmittance can according to main figure tail end to the critical dimension of reference point adjusting simultaneously, or adjusted at one.Please refer to Fig. 3 B, for example available transparent material of mask substrate 300 such as quartz or glass are made, and the predetermined degree of depth of transport zone 304 for example available to the over etching of mask substrate 300 to make, this over etching is looked required phase-shift phase and is decided.302 for example available chromium of mask layer are made.
According to method provided by the present invention and phase shifting mask, compare with conventional method, tail end is critical to tail end Size and figure spacing can be reduced to littler degree. In other words, at the line style tail end of main figure Additional transfer device, and with phase-shift phase and light transmittance optimization, or only with one of them optimization, get final product Effectively avoid the phenomenon of pulling back of line style pattern tail end.
Obviously, be familiar with this professional personnel, do not breaking away under technical scope of the present invention and the spirit, Make all kinds of modifications and variation when utilizing structure of the present invention. But be the present invention includes by aforementioned content phase The modification of itself and variation all belong to the scope of claims and the narration of its synonym.
Claims (8)
1. the method for a designing mask is characterized in that, this method comprises:
One mask is provided, and this mask comprises a mask substrate and is formed on the main figure of one on this mask substrate, and wherein this main figure comprises at least one shape pattern, and
One end of this at least one strip pattern of one transfer device to this main figure is provided, make the critical dimension of this end of this at least one strip pattern less than 0.255 micron, wherein have scope poor to a light phase of 100 degree at 60 degree between this mask substrate and this transfer device, the scope of a penetrability of transfer device is 60% to 100%.
2. the method for designing mask according to claim 1 is characterized in that, wherein this main figure comprises an opaque mask layer.
3. the method for designing mask according to claim 2 is characterized in that, wherein the material of this opaque mask layer comprises chromium.
4. the method for designing mask according to claim 1 is characterized in that, wherein this main figure comprises that transmittance is less than a phase shift layer of 10%.
5. the method for designing mask according to claim 4 is characterized in that, this phase shift layer wherein, and its material comprises nitrogen molybdena silicon (MoSizOxNy).
6. the method for designing mask according to claim 4 is characterized in that, this phase shift layer wherein, and its material comprises chromium oxide.
7. the method for designing mask according to claim 1 is characterized in that, wherein this light phase difference of this mask substrate and this transfer device is spent to 100 degree 80.
8, the method for designing mask according to claim 1 is characterized in that, wherein this transmittance of this transfer device is 80% to 100%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100893286A CN100570480C (en) | 2005-08-02 | 2005-08-02 | The method of designing mask |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100893286A CN100570480C (en) | 2005-08-02 | 2005-08-02 | The method of designing mask |
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| Publication Number | Publication Date |
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| CN1908814A CN1908814A (en) | 2007-02-07 |
| CN100570480C true CN100570480C (en) | 2009-12-16 |
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| JP6093117B2 (en) * | 2012-06-01 | 2017-03-08 | Hoya株式会社 | Photomask, photomask manufacturing method, and pattern transfer method |
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