CN113611753B - Infrared detector packaging structure and packaging method - Google Patents
Infrared detector packaging structure and packaging method Download PDFInfo
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- CN113611753B CN113611753B CN202110820613.XA CN202110820613A CN113611753B CN 113611753 B CN113611753 B CN 113611753B CN 202110820613 A CN202110820613 A CN 202110820613A CN 113611753 B CN113611753 B CN 113611753B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 141
- 239000002184 metal Substances 0.000 claims abstract description 141
- 230000003287 optical effect Effects 0.000 claims abstract description 31
- 239000012790 adhesive layer Substances 0.000 claims description 15
- 238000007747 plating Methods 0.000 claims description 15
- 230000001681 protective effect Effects 0.000 claims description 15
- 238000009713 electroplating Methods 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 239000010410 layer Substances 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 22
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000012858 packaging process Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 18
- 238000005538 encapsulation Methods 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 210000002421 cell wall Anatomy 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses an infrared detector packaging structure which comprises a packaging shell, an infrared chip, an optical window and a metal bonding pad, wherein the packaging shell and the optical window form a vacuum airtight cavity, a metal groove is arranged on the inner bottom of the packaging shell, at least two corners of the metal groove are provided with pits communicated with the grooves, the infrared chip is attached to the bottom surface of the metal groove through conductive paste, and the maximum distance between the groove wall of the metal groove and the side wall of the infrared chip is not greater than the maximum allowable offset of the infrared chip. A packaging method of the infrared detector is also provided. The infrared detector packaging structure has the advantages of simple structure, easy realization and capability of simultaneously overcoming the problems of offset control of a chip, short circuit caused by easy overflow of conductive silver paste in the subsequent packaging process and the like; the packaging method has simple process and strong controllability, can judge whether the offset is good or not by naked eyes and a common magnifier, can improve the production efficiency and effectively reduces the cost.
Description
Technical Field
The invention belongs to the field of die bonding of semiconductor COB (Chips on Board) packaging, and particularly relates to an infrared detector packaging structure and an infrared detector packaging method.
Background
The outer detector package is to slice the whole wafer into individual wafers, pre-fix the wafer and the wafer substrate through conductive silver paste, and then perform high-temperature baking for qualitative fixation. The wafer deviation exceeds standard due to the problems of equipment stability, material deviation, non-uniform expansibility of the conductive silver paste after baking and the like; and the wafer DA (Die Attach) needs to use an optical measuring instrument to measure the offset, so that the efficiency is low, and the optical measuring instrument is expensive.
The surface of the metal coating on the surface of the substrate is smooth, the conductive silver paste is dotted, the wafer is stuck on the conductive silver paste, and the conductive silver paste quantity, the silver paste route, the time and DA (Die Attach) equipment pressure parameters are unstable in the manufacturing process, so that the conductive silver paste easily overflows the wafer boundary in the wafer sticking process, and the risk of short circuit is generated.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides the infrared detector packaging structure which has a simple structure, is easy to realize, and can simultaneously overcome the problems of offset control of a chip, short circuit caused by easy overflow of conductive silver paste in the subsequent packaging process and the like; meanwhile, the packaging method for the infrared detector is simple in process and high in controllability, and the offset can be judged by naked eyes and a common magnifier.
In order to achieve the above purpose, the technical scheme adopted by the invention for solving the technical problems is as follows:
The utility model provides an infrared detector packaging structure, includes encapsulation casing, infrared chip, optical window and metal pad, the vacuum airtight cavity is constituteed with the optical window to encapsulation casing, be equipped with the metal recess on the encapsulation casing internal bottom, just at least two angles of metal recess are equipped with the sunken with the recess intercommunication, the infrared chip pass through the conducting paste install in on the metal recess bottom surface, just the maximum distance of metal recess cell wall and infrared chip lateral wall is not greater than the maximum allowable offset of infrared chip.
Preferably, the four corners of the metal groove are provided with depressions communicated with the metal groove; the concave is an arc-shaped groove; the height of the metal groove is 0.2-0.8 of the thickness of the infrared chip, and is more preferably 0.35-0.7.
Preferably, the metal pads are arranged on two sides in the packaging shell; the infrared chip is bonded with the metal bonding pad through bonding wires (such as gold wires); the back (i.e. bottom) of the packaging shell is provided with pins, and the infrared chip is electrically connected with the outside through metal bonding pads and pins in the packaging shell.
Preferably, the optical window is an optical filter; and the optical filter and the opening of the packaging shell form a vacuum airtight cavity through welding.
As one general inventive concept, there is also provided a packaging method of an infrared detector, by forming a metal groove on an inner bottom surface of a packaging case, the metal groove having recesses on at least two corners thereof, which are in communication with the metal groove, and then mounting an infrared chip in the metal groove by conductive paste, wherein a maximum distance between a groove wall of the metal groove and a side wall of the infrared chip is not greater than a maximum allowable offset of the infrared chip.
The packaging method of the infrared detector comprises the following steps:
s1, providing a packaging shell, forming a metal bonding pad in the packaging shell, and forming a metal groove on the inner bottom surface of the packaging shell, wherein at least two corners of the metal groove are provided with depressions communicated with the metal groove;
S2, providing an infrared chip, and then adopting conductive paste to attach the chip into the metal groove;
S3, bonding the infrared chip and the metal bonding pad;
and S4, providing an optical window, and sealing the opening of the packaging shell by adopting the optical window to form a vacuum sealing cavity.
Preferably, the step S1 specifically includes:
(1) Presetting an infrared chip mounting area range, wherein the mounting area range corresponds to the metal groove and the concave position, setting the setting position and the pattern of the patterned metal bonding pad, and forming a protective adhesive layer in the infrared chip mounting area range and the packaging shell at least comprising all surrounding areas surrounding the patterned metal bonding pad;
(2) Electroplating the packaging shell in an electroplating bath to form a patterned metal pad at the position where the patterned metal pad is arranged, forming a metal coating platform around the infrared chip mounting area, taking out the packaging shell after the thickness of the coating reaches a set range, and removing a protective adhesive layer in the range of the preset infrared chip mounting area to obtain a groove with a recess;
(3) And (3) arranging a protective adhesive layer in other areas except the concave groove, then placing the areas into a plating bath for plating, stopping plating after the plating layer on the bottom surface and the side wall of the groove meets the requirements, and removing the protective adhesive layer to obtain the metal groove for mounting the infrared chip.
Preferably, step S2 specifically includes: the method comprises the steps of firstly coating conductive paste on a set position of a metal groove, bonding an infrared chip in the metal groove by using the bonding force of the conductive paste, and then baking to realize the bonding of the infrared chip in the metal groove.
Preferably, in step S4, the optical window is an optical filter; and the sealing is to weld the optical window and the top of the packaging shell in vacuum.
Preferably, the four corners of the metal groove are provided with depressions communicated with the metal groove; the concave is an arc-shaped groove.
The beneficial effects of the invention are as follows:
1. The sunk metal groove is arranged on the substrate for chip mounting, the size of the metal groove is controlled so that the maximum distance between the groove wall of the metal groove and the side wall of the chip is not more than the maximum allowable offset of the chip, the offset range of the chip can be effectively controlled, the quality of the offset can be judged by naked eyes and a common magnifying glass, the production efficiency is improved, and the detection cost is reduced. Meanwhile, through the arrangement of the concave communicated with the metal groove on at least two corners, such as four corners, of the metal groove, when the chip is pasted by adopting the conductive silver paste, the overflowed conductive paste can be blocked by the side wall of the metal groove with a certain height, and on the other hand, even if the conductive paste is more, the overflowed conductive paste can flow into the concave after overflowing, so that the risk of short circuit caused by the overflow of the conductive paste can be avoided; the invention has simple packaging structure and ingenious conception, can realize the offset control of the chip through an integral groove structure and can greatly reduce the packaging cost and the process difficulty because of short circuit and other problems caused by easy overflow of conductive silver paste in the subsequent packaging process.
2. The invention forms a sinking metal groove on the substrate through metallization electroplating, and the metal groove is provided with the depressions communicated with the metal groove on at least two corners, so that the problems that a wafer is easy to exceed standard, the detection efficiency is low, the cost is high, and the risk of short circuit and the like caused by easy overflow of silver paste in the mounting process can be solved simultaneously, and the invention has simple process conditions and good controllability, can greatly reduce the packaging cost and the process difficulty, and can effectively improve the packaging efficiency.
3. In the invention, the metal groove is formed by a metal electroplating method, so that the adhesive force is strong, the cost is low, the required shape can be designed according to the requirement, and the process controllability is strong.
Drawings
Fig. 1 is a schematic side view of an infrared detector package structure.
Fig. 2 is a schematic diagram of an unsealed infrared detector package structure.
Fig. 3 is an exploded schematic view of an infrared detector package structure.
Reference numerals:
1. An infrared chip; 2. bonding wires; 3. packaging the shell; 4. a metal pad; 5. pins; 6. an optical window; 7. a metal groove.
Detailed Description
The invention is further described below in connection with the drawings and the specific preferred embodiments, but the scope of protection of the invention is not limited thereby.
1-3, Including encapsulation casing 3, infrared chip 1, optical window 6 and metal bonding pad 4, encapsulation casing 3 bottom (back) has pin 5, encapsulation casing 3 and optical window 6 constitute vacuum airtight cavity, encapsulation casing 3 bottom in the middle of the bottom is equipped with metal groove 7, is equipped with electroplated metal layer on the encapsulation casing 3 internal bottom around the metal groove 7, just have the arc wall with metal groove 7 intercommunication on the four angles of metal groove 7, infrared chip 1 through the electric slurry paste dress in on the metal groove 7 bottom, just the maximum distance of metal groove 7 cell wall and infrared chip 1 lateral wall is not more than infrared chip 1's biggest allowable offset. In this embodiment, the metal groove 7 is a square metal groove. The maximum allowable offset here refers to the maximum allowable range of movement value of the infrared chip 1 in the metal groove 7, which is designed in the X-axis and Y-axis directions. The pins 5 at the bottom of the package body 3 are connected to the metal pads 4 in the package body 3, which can be achieved in a manner conventional in the art, typically by electrically connecting the pins 5 to the metal pads 4 through metallized vias in the inner bottom surface of the package body 3, by purchasing the package body 3 with the metallized vias, or by performing subsequent drilling and plating to obtain the desired metallized vias.
In this scheme, through set up the metal recess 7 that sinks on the encapsulation casing 3 bottom surface and be used for infrared chip 1 dress to the size of control metal recess 7 makes the biggest distance of metal recess 7 cell wall and infrared chip 1 lateral wall not exceed infrared chip 1's biggest allowable offset, and is equipped with the arc groove with metal recess 7 intercommunication at four angles of metal recess 7, can effectively control infrared chip 1's offset scope, adopts naked eye and ordinary magnifying glass even can judge the quality of offset, improves production efficiency, has arc recess because of metal recess 7 has certain degree of depth and recess corner department simultaneously, can avoid the silver thick liquid to overflow and cause the risk of surrounding short circuit.
In this scheme, the height of metal recess 7 is 1/2 of infrared chip 1 thickness, and the height of metal recess 7 can be adjusted according to actual demand in fact.
The shape of the metal groove 7 is the same as that of the infrared chip 1 (wafer), but the area of the metal groove is equal to the product of the area of the wafer plus the maximum value of the offset of the X axis and the Y axis, and the DA technology of the wafer can directly judge that the DA offset exceeds the standard value by naked eyes as long as the wafer is placed in the metal layer groove 7, and the technology can achieve the effects of improving the technology level and preventing fool in the manufacturing process without singly using an optical measuring instrument for calculation.
The metal pads 4 are arranged on two opposite sides in the packaging shell 3, and the periphery of each metal pad 4 is provided with an electroless metal layer, and is a ceramic layer of the packaging shell 3; the infrared chip 1 is bonded with the metal bonding pad 4 through the bonding wire 2.
The optical window 6 is an optical filter; the optical filter and the opening of the packaging shell 3 form a vacuum sealing cavity through welding.
The method comprises the steps of forming metal grooves 7 on the inner bottom surface of a packaging shell 3, forming arc-shaped grooves communicated with the metal grooves 7 on four corners of the metal grooves 7, and then attaching an infrared chip 1 into the metal grooves 7 through conductive silver paste, wherein the maximum distance between the groove walls of the metal grooves 7 and the side walls of the infrared chip 1 is not larger than the maximum allowable offset of the infrared chip 1. In the chip mounting process, as the metal groove 7 has a certain height, on one hand, redundant conductive silver paste is trapped in the metal groove 7, and on the other hand, even if the conductive silver paste overflows from the metal groove 7, the conductive silver paste also enters the arc-shaped groove, so that the short circuit risk caused by the overflow of the conductive silver paste from the metal groove 7 is avoided.
The method for packaging the infrared detector comprises the following steps:
s1, providing a packaging shell 3, forming a metal bonding pad 4 in the packaging shell 3, forming metal grooves 7 on the inner bottom surface of the packaging shell 3, wherein the four corners of the metal grooves 7 are respectively provided with an arc-shaped groove communicated with the metal grooves 7, and the metal grooves 7 are the mounting areas of the infrared chip 1;
S2, providing an infrared chip 1, and then adopting conductive silver paste to attach the infrared chip 1 into the metal groove 7; the infrared chip 1 is a wafer, and is obtained by slicing the whole wafer to form individual wafers, performing professional cleaning on the individual wafers, and removing foreign matters on the surface;
S3, bonding the bonding pad on the infrared chip 1 with the metal bonding pad 4 in the packaging shell 3 by adopting the bonding wire 2;
and S4, providing an optical window 6, and sealing the opening of the packaging shell 3 by adopting the optical window 6 to form a vacuum airtight cavity, namely packaging is realized.
In the packaging method, step S1 includes:
(1) Presetting an installation area range of an infrared chip 1, wherein the installation area range corresponds to the position of a metal groove 7 with an arc-shaped groove communicated with the metal groove 7, setting the arrangement position and the pattern of a patterned metal bonding pad 4, virtually reserving the position for forming the metal bonding pad 4 in a purchased packaging shell 3, designing a steel mesh according to the shape of the required metal groove 7, forming a protective adhesive layer with the required shape in the area of the required metal groove 7 in a steel mesh screen printing or coating mode, forming the protective adhesive layer in the packaging shell 3 at least comprising the positions of all surrounding areas surrounding the position of the patterned metal bonding pad 4, and forming the protective adhesive layer on the outer peripheral surface of the packaging shell 3 to prevent the outer peripheral surface of the packaging shell 3 from being plated with metal when the subsequent metal plating is performed;
(2) Placing the packaging shell 3 into a plating bath for plating so as to form a patterned metal pad 4 at the position where the patterned metal pad 4 is arranged, forming a metal plating platform around the infrared chip mounting area, taking out the packaging shell after the thickness of the plating reaches a set range, and removing a protective adhesive layer in the range of the preset infrared chip mounting area to obtain a groove with an arc-shaped groove;
(3) And (3) arranging a protective adhesive layer in other areas except the groove with the arc-shaped groove, then placing the protective adhesive layer into an electroplating tank for electroplating, controlling the electroplating time to form a gold surface and the height of the bottom surface of the groove, stopping electroplating after the plating layers of the bottom surface and the side wall of the groove meet the requirements, and removing the protective adhesive layer to obtain the metal groove 7 for mounting the infrared chip 1. The grooves formed by electroplating have strong adhesion, low cost, random shape design and strong process controllability.
The step S2 specifically comprises the following steps: firstly, conducting silver paste is coated at a set position of the metal groove 7, the infrared chip 1 is attached to the central area of the metal groove 7 by utilizing the cohesive force of the conducting silver paste, and then the infrared chip 1 is baked and cured by a dust-free oven, so that the infrared chip 1 is attached in the metal groove 7. In the specific operation process, when the conductive silver paste is coated, imaging observation is performed through a camera, the computer is used for controlling the manipulator to carry out electro-coating on the set position, then the software algorithm of the computer is used for controlling the manipulator to adsorb the infrared chip 1, the manipulator is used for controlling the manipulator to place the infrared chip 1 on a designated area, and the infrared chip 1 is attached to the central area of the metal groove 7.
In step S4, the optical window 6 is an optical filter; the sealing is to weld the optical window 6 with the top of the package 3 in vacuum.
In step S3, bond pads on the infrared chip 1 and metal pads 4 in the package cavity are bonded together by using bonding wires (gold wires) 2 using a Wire Bond process.
The above description is only of the preferred embodiment of the present invention, and is not intended to limit the present invention in any way. While the invention has been described in terms of preferred embodiments, it is not intended to be limiting. Any person skilled in the art can make many possible variations and modifications to the technical solution of the present invention or equivalent embodiments using the method and technical solution disclosed above without departing from the spirit and technical solution of the present invention. Therefore, any simple modification, equivalent substitution, equivalent variation and modification of the above embodiments according to the technical substance of the present invention, which do not depart from the technical solution of the present invention, still fall within the scope of the technical solution of the present invention.
Claims (6)
1. The packaging method of the infrared detector is characterized in that a metal groove is formed on the inner bottom surface of a packaging shell, at least two corners of the metal groove are provided with pits communicated with the metal groove, then an infrared chip is attached in the metal groove through conductive paste, and the maximum distance between the groove wall of the metal groove and the side wall of the infrared chip is not greater than the maximum allowable offset of the infrared chip; the packaging method comprises the following steps:
s1, providing a packaging shell, forming a metal bonding pad in the packaging shell, and forming a metal groove on the inner bottom surface of the packaging shell, wherein at least two corners of the metal groove are provided with depressions communicated with the metal groove;
S2, providing an infrared chip, and mounting the infrared chip in the metal groove by adopting conductive paste;
S3, bonding the infrared chip and the metal bonding pad;
S4, providing an optical window, and sealing the opening of the packaging shell by adopting the optical window to form a vacuum sealing cavity;
the step S1 specifically comprises the following steps:
(1) Presetting an infrared chip mounting area range, wherein the mounting area range corresponds to the metal groove and the concave position, setting the setting position and the pattern of the patterned metal bonding pad, and forming a protective adhesive layer in the infrared chip mounting area range and the packaging shell at least comprising all surrounding areas surrounding the patterned metal bonding pad;
(2) Electroplating the packaging shell in an electroplating bath to form a patterned metal pad at the position where the patterned metal pad is arranged, forming a metal coating platform around the infrared chip mounting area, taking out the packaging shell after the thickness of the coating reaches a set range, and removing a protective adhesive layer in the range of the preset infrared chip mounting area to obtain a groove with a recess;
(3) And (3) arranging a protective adhesive layer in other areas except the concave groove, then placing the areas into a plating bath for plating, stopping plating after the plating layer on the bottom surface and the side wall of the groove meets the requirements, and removing the protective adhesive layer to obtain the metal groove for mounting the infrared chip.
2. The method for packaging an infrared detector according to claim 1, wherein step S2 specifically comprises: the method comprises the steps of firstly coating conductive paste on a set position of a metal groove, bonding an infrared chip in the metal groove by using the bonding force of the conductive paste, and then baking to realize the bonding of the infrared chip in the metal groove.
3. The method for packaging an infrared detector according to claim 1 or 2, wherein in step S4, the optical window is an optical filter; and the sealing is to weld the optical window and the top of the packaging shell in vacuum.
4. The method for packaging an infrared detector according to claim 1 or 2, wherein four corners of the metal groove are provided with depressions communicated with the metal groove; the concave is an arc-shaped groove; the height of the metal groove is 0.2-0.8 of the thickness of the infrared chip.
5. The method for packaging an infrared detector according to claim 1 or 2, wherein the metal pads are arranged on two sides in the packaging shell; the infrared chip is bonded with the metal bonding pad through the bonding wire.
6. An infrared detector package structure, characterized in that it is obtained by the package method according to any one of claims 1 to 5.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110820613.XA CN113611753B (en) | 2021-07-20 | 2021-07-20 | Infrared detector packaging structure and packaging method |
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| CN202110820613.XA CN113611753B (en) | 2021-07-20 | 2021-07-20 | Infrared detector packaging structure and packaging method |
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| CN113611753B true CN113611753B (en) | 2024-05-28 |
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| CN114203567B (en) * | 2021-11-24 | 2022-08-16 | 广东气派科技有限公司 | Process method for controlling adhesive stability in semiconductor packaging process |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06151902A (en) * | 1992-11-04 | 1994-05-31 | Matsushita Electron Corp | Solid state image pickup device |
| JP2000322989A (en) * | 1999-05-14 | 2000-11-24 | Omron Corp | Photoelectric sensor and its manufacture |
| CN2891286Y (en) * | 2005-12-30 | 2007-04-18 | 华东科技股份有限公司 | Image sensing and encapsulation structure |
| CN102376672A (en) * | 2011-11-30 | 2012-03-14 | 江苏长电科技股份有限公司 | Foundation island-free ball grid array packaging structure and manufacturing method thereof |
| JP2012109328A (en) * | 2010-11-16 | 2012-06-07 | Panasonic Corp | Semiconductor device |
| CN102997999A (en) * | 2012-11-26 | 2013-03-27 | 烟台睿创微纳技术有限公司 | Infrared focal plane array detector |
-
2021
- 2021-07-20 CN CN202110820613.XA patent/CN113611753B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06151902A (en) * | 1992-11-04 | 1994-05-31 | Matsushita Electron Corp | Solid state image pickup device |
| JP2000322989A (en) * | 1999-05-14 | 2000-11-24 | Omron Corp | Photoelectric sensor and its manufacture |
| CN2891286Y (en) * | 2005-12-30 | 2007-04-18 | 华东科技股份有限公司 | Image sensing and encapsulation structure |
| JP2012109328A (en) * | 2010-11-16 | 2012-06-07 | Panasonic Corp | Semiconductor device |
| CN102376672A (en) * | 2011-11-30 | 2012-03-14 | 江苏长电科技股份有限公司 | Foundation island-free ball grid array packaging structure and manufacturing method thereof |
| CN102997999A (en) * | 2012-11-26 | 2013-03-27 | 烟台睿创微纳技术有限公司 | Infrared focal plane array detector |
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