CN113611212B - Light receiving sensor, display panel, and electronic apparatus - Google Patents
Light receiving sensor, display panel, and electronic apparatus Download PDFInfo
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- CN113611212B CN113611212B CN202110873013.XA CN202110873013A CN113611212B CN 113611212 B CN113611212 B CN 113611212B CN 202110873013 A CN202110873013 A CN 202110873013A CN 113611212 B CN113611212 B CN 113611212B
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- 238000005070 sampling Methods 0.000 claims abstract description 9
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- 238000004891 communication Methods 0.000 description 8
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Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
Abstract
The application discloses a light receiving sensor, a display panel and an electronic device. The light receiving sensor includes: a photosensitive element and a pixel driving circuit. The pixel driving circuit includes a source follower and a frequency-increasing sub-circuit. The source follower is connected with the photosensitive element to generate an electric signal according to the charge of the photosensitive element. The frequency increasing sub-circuit is connected with the source electrode follower to increase the sampling frequency of the pixel driving circuit. According to the light receiving sensor, the display panel and the electronic equipment, the frequency-increasing sub-circuit is added into the pixel driving circuit of the light receiving sensor, so that the circuit frequency is adaptively adjusted, the frequency characteristic of the light receiving sensor can be effectively enhanced on the premise of ensuring the area, and the design of high frequency and low error rate is realized.
Description
Technical Field
The present application relates to the field of display technologies, and in particular, to a light receiving sensor, a display panel, and an electronic device.
Background
Optical communication technology has been rapidly developed in recent years due to its characteristics of high speed and privacy. The optical communication technology uses the periodical change of light intensity as an information conducting medium to realize high-speed and high-precision transmission of information, and the core technology is to quickly convert a photon stream with a signal into an electric signal.
Currently, there are two core problems to be solved in the optical communication technology, one is the intensity of the optical signal, and the other is the frequency of the optical signal, which is a pair of contradictors. The increase of the area of the optical signal receiver can effectively increase the signal strength and reduce the error rate, but the parasitic capacitance brought by the optical signal receiver can influence the receiving frequency of the optical signal. Therefore, how to enhance the frequency characteristic of the optical communication sensor on the premise of ensuring the area and realize the high-frequency low-bit error rate is a problem to be solved urgently.
Disclosure of Invention
In view of this, the present application aims to solve, at least to some extent, one of the problems in the related art. To this end, an object of the present application is to provide a light receiving sensor, a display panel, and an electronic apparatus.
The embodiment of the application also provides a light receiving sensor. The light receiving sensor includes a photosensitive element and a pixel driving circuit. The pixel driving circuit comprises a source follower and a frequency increasing sub-circuit. The source follower is connected with the photosensitive element to generate an electric signal according to the charge of the photosensitive element; the frequency increasing sub-circuit is connected with the source follower to increase the sampling frequency of the pixel driving circuit.
In some embodiments, the source follower includes a first transistor. The grid electrode of the first transistor is connected with the first electrode of the photosensitive element, and the source electrode of the first transistor is connected with the first power supply end.
In some embodiments, the frequency-increasing subcircuit includes a plurality of inductors. The inductors are connected with the photosensitive element and the grid electrode of the first transistor, the inductors are respectively equivalent to the coupling capacitance of the photosensitive element to form a plurality of LC series circuits, and the LC series circuits are all connected with the photosensitive element in parallel.
In some embodiments, the light receiving sensor includes a substrate base plate, a circuit layer, and a device layer that are sequentially stacked. The pixel driving circuit is positioned on the circuit layer, and the circuit layer comprises an active layer, a first insulating layer, a grid layer, a second insulating layer and a source drain layer which are sequentially stacked; the photosensitive element is located on the device layer, and the device layer comprises a first electrode layer, a photosensitive material layer and a second electrode layer which are sequentially stacked.
In some embodiments, the first electrode layer includes a plurality of first electrodes, each of which forms the inductor in a spiral shape, and each of which connects the photosensitive material layer and the gate layer, respectively.
In some embodiments, the first electrode layer includes a plurality of first electrodes, the plurality of first electrodes are respectively connected to the photosensitive material layer, the light receiving sensor includes a third electrode layer including third electrodes corresponding to the plurality of first electrodes, the third electrodes form the inductance in a spiral shape, and each of the third electrodes is connected to the gate layer and one of the first electrodes.
In some embodiments, the projections of the plurality of third electrodes onto the substrate are all located within the projections of the gate layer onto the substrate.
In some embodiments, the third electrode layer is located between the first electrode layer and the source drain layer.
In some embodiments, the second pole of the photosensitive element is connected to a bias power supply terminal, the pixel driving circuit includes a second transistor, a gate of the second transistor is connected to a control signal terminal, a first pole of the second transistor is connected to a second power supply terminal, and a second pole of the second transistor is connected to a gate of the first transistor.
In some embodiments, the pixel driving circuit includes a first resistor, the frequency-increasing sub-circuit is connected to the first power supply and a source of the first transistor, a drain of the first transistor is connected to an output terminal of the source follower, and the first resistor is connected to a drain of the first transistor and a second power supply terminal; or the frequency increasing sub-circuit is connected with the second power supply end and the drain electrode of the first transistor, the source electrode of the first transistor is connected with the output end of the source follower, and the first resistor is connected with the source stage of the first transistor and the first power supply end.
In some embodiments, the second pole of the photosensitive element is connected to the second power supply terminal, and the pixel driving circuit includes a second resistor, and the second resistor is connected to the first power supply terminal and the gate of the first transistor.
In some embodiments, the frequency-increasing subcircuit includes a third resistor, a fourth resistor, and a capacitor. The fourth resistor and the capacitor are connected in series to form an RC series circuit, and the RC series circuit and the third resistor are connected in parallel.
In some embodiments, the second pole of the photosensitive element is connected to the bias power supply terminal, the pixel driving circuit includes a second transistor, a gate of the second transistor is connected to the control signal terminal, a first pole of the second transistor is connected to the second power supply terminal, a second pole of the second transistor is connected to the gate of the first transistor, and the frequency increasing sub-circuit is connected to the first power supply terminal and the source of the first transistor.
In some embodiments, the frequency-increasing subcircuit includes a third resistor, a fourth resistor, and a third transistor. The first pole and the second pole of the third transistor are both connected with the fourth resistor to equivalently form an RC series circuit, and the RC series circuit is connected with the third resistor in parallel.
In some embodiments, the pixel drive circuit includes a readout sub-circuit. The readout sub-circuit includes: a gate of the fourth transistor is connected with a scanning control signal, and a first pole of the fourth transistor is connected with an output end of the source follower; the operational amplifier is connected with the second pole of the fourth transistor.
In some embodiments, the light receiving sensor includes a plurality of the photosensitive elements and a plurality of the pixel driving circuits arranged in an array, the photosensitive elements and the pixel driving circuits being in one-to-one correspondence.
The application also provides a display panel. The display panel comprises the light receiving sensor according to any one of the above embodiments.
The application further provides electronic equipment. The electronic device comprises the light receiving sensor according to any one of the above embodiments.
According to the light receiving sensor, the display panel and the electronic equipment, the frequency-increasing sub-circuit is added into the pixel driving circuit of the light receiving sensor, so that the circuit frequency is adaptively adjusted, the frequency characteristic of the light receiving sensor can be effectively enhanced on the premise of ensuring the area, and the design of high frequency and low error rate is realized.
Additional aspects and advantages of the application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application.
Drawings
The foregoing and/or additional aspects and advantages of the application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a schematic view of a scenario of optical information acquisition and transmission in the prior art;
FIG. 2 is a circuit diagram of a light receiving sensor of certain embodiments of the present application;
FIG. 3 is a schematic diagram of a film structure of a light receiving sensor in one example of some embodiments of the application;
FIG. 4 is a schematic view of a film structure of a light receiving sensor according to still another embodiment of the present application;
FIG. 5 is a top view of an SD2' layer of some embodiments of the application;
FIG. 6 is a schematic view of a film structure of a light receiving sensor according to still another example of some embodiments of the present application;
FIG. 7 is a circuit diagram of a light receiving sensor of certain embodiments of the present application;
FIG. 8 is a circuit diagram of a light receiving sensor of certain embodiments of the present application;
FIG. 9 is a circuit diagram of a light receiving sensor of certain embodiments of the present application;
FIG. 10 is a schematic diagram of an array arrangement of photosensitive elements and pixel driving circuits in a light receiving sensor according to some embodiments of the present application;
FIG. 11 is a schematic diagram of a display panel according to some embodiments of the present application;
fig. 12 is a schematic structural diagram of an electronic device according to some embodiments of the present application.
Detailed Description
Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary only for explaining the present application and are not to be construed as limiting the present application.
In the description of the present application, it should be understood that the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present application, the meaning of "a plurality" is two or more, unless specifically defined otherwise.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; may be mechanically connected, may be electrically connected, or may be in communication with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
The following disclosure provides many different embodiments, or examples, for implementing different features of the application. In order to simplify the present disclosure, components and arrangements of specific examples are described below. They are, of course, merely examples and are not intended to limit the application. Furthermore, the present application may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not themselves indicate the relationship between the various embodiments and/or arrangements discussed.
Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary only for explaining the present application and are not to be construed as limiting the present application.
The core problem encountered in the process of screen fusion in the optical communication technology is insufficient signal caused by transmittance. The problem can be effectively solved by increasing the area of the photosensitive device, but parasitic capacitance brought along with the problem can bring a pole forward, and the response frequency is seriously affected, as shown in fig. 1, 1 is a signal line for collecting optical information, 2 is a signal line for transmitting the optical information, and the result shows that the frequency of a received optical signal is seriously attenuated and deviated, so that the design requirement is not met. Therefore, how to enhance the frequency characteristic of the optical communication sensor on the premise of ensuring the area and realize the high-frequency low-bit error rate is a problem to be solved urgently.
In view of this, referring to fig. 2, the present application provides a light receiving sensor 100. The light receiving sensor 100 includes: a photosensitive element 110 and a pixel driving circuit 120. Specifically, the photosensitive element 110 may be a device that receives an optical signal such as a photosensitive PIN. The pixel driving circuit 120 is electrically connected to the photosensitive element 110, and the pixel driving circuit 120 can generate an electrical signal according to the charge of the photosensitive element 110.
The pixel driving circuit 120 includes a source follower 121 and an frequency-increasing sub-circuit 122. The source follower 121 is connected to the photosensitive element 110 to generate an electrical signal according to the charge of the photosensitive element 110. The frequency increasing sub-circuit 122 is connected to the source follower 121 to increase the sampling frequency of the pixel driving circuit 120.
The source follower 121 includes a first transistor, which is the D-TFT in fig. 2. The gate of the first transistor D-TFT is connected to a first pole of the photosensitive element 110, and a second pole of the photosensitive element 110 is connected to the bias power supply terminal Vbias. The source of the first transistor D-TFT is connected to the first power supply terminal Vdd. Specifically, the source follower 121 is a circuit for field effect transistor used for impedance transformation and voltage following, and is characterized by a particularly high input impedance, a low output impedance, and a voltage amplification factor of approximately 1.
The frequency increasing sub-circuit 122 includes a plurality of inductors L, where the plurality of inductors L connect the photosensitive element 110 and the gate of the first transistor 1211, and the plurality of inductors L are equivalent to the coupling capacitance of the photosensitive element C to form a plurality of LC series circuits, which are all connected in parallel with the photosensitive element 110. It will be appreciated that the present application may vary the pole of the structure of the photosensitive element 110 (e.g., photosensitive PIN) by adding an inductance L to the light receiving sensor 100, thereby achieving an increase in the sampling frequency of the pixel driving circuit 120.
The pixel driving circuit 120 further includes a second transistor T-TFT. The grid electrode of the second transistor T-TFT is connected with the control signal end, and the first electrode of the second transistor T-TFT is connected with the second power supply end V SS The second pole of the second transistor T-TFT is connected with the grid electrode of the first transistor T-TFT. The first power terminal Vdd may be at a high level, and correspondingly, the second power terminal Vss may be at a low level. In the embodiment of the application, the second power source terminal Vss is a ground terminal
The application adds the design of the frequency increasing sub-circuit into the pixel driving circuit of the light receiving sensor 100, realizes the self-adaptive adjustment of circuit frequency, can effectively enhance the frequency characteristic of the light receiving sensor on the premise of ensuring the area, and realizes the design of high frequency and low error rate.
Referring to fig. 3 in combination, in one embodiment, the light receiving sensor 100 includes a base substrate 10 (Glass layer), a circuit layer 20 (Poly layer-PLN 1 layer), and a device layer 30 (SD 2 layer-ITO layer) stacked in this order from a structural point of view.
The base substrate 10 has a structure shown as a Glass layer in fig. 3. A Buffer layer Buffer may be further included between the base substrate 10 (Glass) and the circuit layer 20 (Poly layer-PLN 1 layer). It will be appreciated that, due to the mismatch between the high-speed device and the low-speed device, the high-speed device may take time to wait for the low-speed device, and thus a Buffer zone, i.e. Buffer layer Buffer, may be set up between the two devices.
The circuit layer 20 includes an active layer Poly, a first insulating layer GI, a Gate layer Gate, a second insulating layer ILD, and a source drain layer SD1, which are sequentially stacked. The pixel driving circuit 120 is located on the circuit layer 20.
The active layer Poly is mainly used to form a MOS transistor, for example, a first transistor 1211 (D-TFT). The gate of the MOS transistor is formed of polysilicon (Poly), and the source and drain of the MOS transistor are formed by SD1 injection in FIG. 3.
The first insulating layer GI may separate the active layer Poly from the Gate layer Gate so that the active layer Poly and the Gate layer Gate do not affect each other.
The second insulating layer ILD may space the Gate layer Gate from the source drain layer SD1 so that the Gate layer Gate and the source drain layer SD1 do not affect each other.
In addition, the second insulating layer ILD is provided with 2 through holes, and the source electrode SD1 and the drain electrode SD1 are electrically connected to the active layer Poly through the corresponding through holes.
The device layer 30 includes a first electrode layer SD2', a photosensitive material layer PIN, and a second electrode layer ITO, which are sequentially stacked. A photosensitive element 110 (e.g., a photosensitive PIN) is located at the device layer 30.
Referring to fig. 3, in an example, the first electrode layer SD2' includes a plurality of first electrodes SD2, each of the first electrodes SD2 forms an inductance L in a spiral shape, and each of the first electrodes SD2 is connected to the photosensitive material layer PIN and the Gate layer Gate, respectively. In the figure, the SD2 'layer is fully covered with the first electrode SD2, so that the SD2' layer and the ITO layer can form a capacitor, and meanwhile, an inductor L can be formed, one electrode of the capacitor is combined with the inductor to form the first electrode SD2, and the inductor is thickened to replace the capacitor, as shown in fig. 3, so that the film structure can be effectively reduced, and the manufacturing cost of the light receiving sensor 100 can be reduced.
Referring to fig. 4 and 5, in another example, the first electrode layer SD2' includes a plurality of first electrodes SD2, and the plurality of first electrodes SD2 are respectively connected to the photosensitive material layer. In fig. 4, 3 first electrodes SD2 are shown. The light receiving sensor 100 includes a third electrode layer SD3', and the third electrode layer SD3' includes a third electrode SD3 corresponding to the plurality of first electrodes SD2. As shown in fig. 5, the third electrodes SD3 form an inductor in a spiral shape, and each third electrode SD3 connects the Gate layer Gate and one first electrode SD2.
The third electrode layer SD3' is located between the first electrode layer SD2 and the source-drain electrode layer SD1. A third electrode layer SD3 '(or referred to as an inductance layer SD 3') is added to the existing film structure.
As will be appreciated, in view of the problem of parasitic capacitance of the photosensitive PIN during sampling, parasitic capacitance refers to the capacitive characteristic exhibited by the photosensitive PIN and the like at high frequencies. In the embodiment of the application, a blocking mode is adopted, as shown in fig. 5, a complete electrode is divided into a plurality of discrete capacitors, an inductance scheme is added, and a zero point is utilized to eliminate a pole of a photosensitive PIN sampling circuit, so that the acquisition frequency is increased.
Specifically, at this time, the operation of the light receiving sensor 100 is divided into two parts, i.e., the frequency of the collected light signal and the frequency of the amplified light signal, and a new capacitance formula can be obtained by dividing the electrode SD2 layer corresponding to the photosensitive PIN:
as can be seen from the formula (1), the new capacitance frequency characteristic is
R in the formula (2) is the resistance value of the capacitor, also called capacitance, C is the capacitance of the capacitor, f x Is the frequency. At this point c=c pin 。
The resistance R of the capacitor is related to the carrier velocity in the photosensitive element 110 (photosensitive PIN), and is independent of the area, and the sampling frequency can be increased after being divided into small areas.
It can be appreciated that after the inductance layer SD3' is added, the frequency distribution no longer follows the frequency characteristic of the large capacitance by the pole shifted backward by the zero, the refresh speed increases, the PIN sampling frequency increases, and the optical communication speed of the optical receiving sensor 100 increases.
Meanwhile, since the light receiving area of the light sensing element 110 (photosensitive PIN) is unchanged, the signal size is not affected, so that the bit error rate is not affected, the bit error rate is not improved, the frequency characteristic of the light receiving sensor 100 is enhanced on the premise of ensuring the area, and the high-frequency low bit error rate is further realized.
Referring to fig. 6, in still another embodiment, the projections of the third electrodes SD3 (the third electrodes SD3 are located in the source-drain layers in fig. 6) on the substrate Glass are all located within the projections of the Gate layers Gate on the substrate. That is, the inductance layer SD3 'formed of the plurality of third electrodes SD3 can be integrated into the SD1 layer, and the connection area between the Gate layer Gate and the inductance layer SD3' (also SD1 layer in fig. 6) can be increased, thereby forming a capacitance.
Specifically, after increasing the connection area between the Gate layer Gate and the third electrode layer SD3' (also SD1 layer in fig. 6), SD1 may be coupled to the Gate layer Gate through capacitance at high frequency instead of being turned on through the connection point, and system stability may be increased.
In addition, the light receiving sensor 100 may further include an encapsulation layer Cover and other light elements (PVX 4, PVX 3) at a level. The encapsulation layer Cover can protect circuits and devices inside the light receiving sensor 100 from being easily fallen down and wet, and prolong the service life of the light receiving sensor 100.
Referring to fig. 7, in one embodiment, the pixel driving circuit 120 includes a first resistor R2, the frequency increasing sub-circuit 122 is connected to the first power supply Vdd and the source of the first transistor D-TFT, the drain of the first transistor D-TFT is connected to the output terminal Vout of the source follower 121, and the first resistor R2 is connected to the drain of the first transistor D-TFT and the second power supply terminal Vss.
Referring to fig. 8, in another embodiment, the frequency increasing sub-circuit 122 is connected to the second power source terminal Vss and the drain of the first transistor D-TFT, the source of the first transistor D-TFT is connected to the output terminal Vout of the source follower 121, and the first resistor R2 is connected to the source of the first transistor D-TFT and the first power source terminal Vdd.
More specifically, the same structural components in fig. 7 and 8 are: the second pole of the photosensitive element 110 is connected to the second power terminal V SS 。
The pixel driving circuit 120 includes a second resistor R1, and the second resistor R1 is connected to the first power supply terminal Vdd and the gate of the first transistor D-TFT.
The frequency increasing sub-circuit 122 includes a third resistor R3, a fourth resistor R4, and a capacitor C1, where the fourth resistor R4 and the capacitor C1 are connected in series to form an RC series circuit. The RC series circuit is connected in parallel with a third resistor R3.
Specifically, the addition of the capacitor C1 in fig. 7 or fig. 8 reduces the total resistance formed by the RC series circuit (the capacitor C1 and the fourth resistor R4) and the third resistor R3 connected in parallel, so that the voltage between the RC series circuit and the third resistor R3 connected in parallel is reduced, and the circuit voltage division of the output terminal Vout is increased, which can effectively reduce the signal attenuation of the pixel at high frequency and widen the frequency characteristic.
Note that the scheme of adding the capacitor C1 in fig. 7 and 8 is implemented in the transimpedance amplifier stage in the pixel driving circuit 120.
In other embodiments of the present application, a Thin Film Transistor (TFT) may be used instead of a capacitor, so that the space of the Thin Film Transistor (TFT) may be effectively utilized, the light receiving area of the photosensitive element 110 (photosensitive PIN) may be increased, and a larger signal amount and a lower bit error rate may be obtained. A specific circuit configuration of the light receiving sensor 100 is shown in fig. 9.
Referring to fig. 9, the second pole of the photosensitive element 110 of the light receiving sensor 100 is connected to the bias power terminal Vbais.
The pixel driving circuit 120 of the light receiving sensor 100 includes a second transistor T-TFT. The grid electrode of the second transistor T-TFT is connected with the control signal end, the first electrode of the second transistor T-TFT is connected with the second power supply end Vss, and the second electrode of the second transistor T-TFT is connected with the grid electrode of the first transistor D-TFT.
The frequency increasing sub-circuit 122 connects the first power supply terminal Vdd and the source of the first transistor D-TFT. The frequency increasing sub-circuit 122 includes a third resistor R3, a fourth resistor R4, and a third transistor TFT-C. The first pole and the second pole of the third transistor TFT-C are both connected with a fourth resistor R4 to equivalently form an RC series circuit, and the RC series circuit is connected with the third resistor R3 in parallel.
At this time, the third transistor TFT-C is used to replace the capacitor C1 described above, so that the space of the Thin Film Transistor (TFT) can be effectively utilized, the light receiving area of the light sensing element 110 (photosensitive PIN) can be increased, and a larger signal quantity and a lower bit error rate can be obtained.
In other embodiments of the present application, the light receiving sensor 100 may further include an LC circuit formed by adding the inductance L, and an RC circuit formed by adding the capacitance C1 or the third transistor TFT-C, so as to enhance the frequency characteristic of the light receiving sensor 100 on the premise of ensuring the area, and further realize a high frequency and low error rate.
Referring to fig. 2 or 9, in the above embodiments of the present application, the pixel driving circuit 120 may include a readout sub-circuit 123. The readout sub-circuit 123 includes a fourth transistor Gate and an operational amplifier 1231. The Gate of the fourth transistor Gate is connected to the scan control signal, and the first electrode of the fourth transistor Gate is connected to the output terminal of the source follower 121. The operational amplifier is connected with the second pole of the fourth transistor Gate.
The readout circuit 123 may read the electrical signal (Vout) output from the output terminal of the source follower 121, and then control the fourth transistor Gate to be turned on by the scan control signal, so that the electrical signal (Vout) may be converted by the operational amplifier 1231 to obtain a digital signal.
Referring to fig. 10, the light receiving sensor 100 may include a plurality of photosensitive elements 110 and a plurality of pixel driving circuits 120 arranged in an array. The photosensitive elements 110 and the pixel driving circuit 120 are in one-to-one correspondence. The plurality of photosensitive elements 110 and the plurality of pixel driving circuits 120 arranged in an array can make the optical signal received by the light receiving sensor 100 more accurate. The array arrangement may be a manner in which the photosensitive elements 110 are spaced from the pixel driving circuit 120 (as shown in fig. 10), or may be other arrangements, which are not limited herein.
Referring to fig. 11, the present application further provides a display panel 200, and the display panel 200 includes the light receiving sensor 100. The display panel 200 may be a structural component for display such as a screen.
The display panel 200 of the application adds the design of the frequency increasing sub-circuit into the pixel driving circuit of the light receiving sensor 100, realizes the self-adaptive adjustment of circuit frequency, can effectively enhance the frequency characteristic of the light receiving sensor on the premise of ensuring the area, and realizes the design of high frequency and low error rate.
Referring to fig. 12, the present application further provides an electronic device 300. The electronic device 300 includes the light receiving sensor 100. The electronic device 300 may be a mobile phone, a tablet computer, an ipd, or the like, which has a display component such as a screen.
The electronic device 300 of the application adds the design of the frequency increasing sub-circuit into the pixel driving circuit of the light receiving sensor 100, realizes the self-adaptive adjustment of circuit frequency, can effectively enhance the frequency characteristic of the light receiving sensor on the premise of ensuring the area, and realizes the design of high frequency and low error rate.
The foregoing examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.
Claims (16)
1. A light receiving sensor, comprising:
a photosensitive element; and
a pixel driving circuit, the pixel driving circuit comprising:
a source follower connected to the photosensitive element to generate an electrical signal according to the charge of the photosensitive element; the source follower comprises a first transistor, wherein the grid electrode of the first transistor is connected with the first pole of the photosensitive element, and the source electrode of the first transistor is connected with the first power supply end;
the frequency-increasing sub-circuit is connected with the source follower to increase the sampling frequency of the pixel driving circuit; the frequency-increasing sub-circuit comprises a plurality of inductors, the inductors are connected with the photosensitive element and the grid electrode of the first transistor, the inductors are respectively equivalent to the coupling capacitance of the photosensitive element to form a plurality of LC series circuits, and the LC series circuits are all connected with the photosensitive element in parallel.
2. The light-receiving sensor according to claim 1, wherein the light-receiving sensor comprises a substrate base plate, a circuit layer, and a device layer which are stacked in this order;
the pixel driving circuit is positioned on the circuit layer, and the circuit layer comprises an active layer, a first insulating layer, a grid layer, a second insulating layer and a source drain layer which are sequentially stacked;
the photosensitive element is located on the device layer, and the device layer comprises a first electrode layer, a photosensitive material layer and a second electrode layer which are sequentially stacked.
3. The light-receiving sensor as recited in claim 2, wherein the first electrode layer comprises a plurality of first electrodes, each of the first electrodes forming the inductance in a spiral shape, each of the first electrodes being connected to the photosensitive material layer and the gate layer, respectively.
4. The light-receiving sensor as recited in claim 2, wherein the first electrode layer includes a plurality of first electrodes, the plurality of first electrodes being connected to the photosensitive material layer, respectively, the light-receiving sensor includes a third electrode layer including third electrodes corresponding to the plurality of first electrodes, the third electrodes forming the inductance in a spiral shape, each of the third electrodes being connected to the gate layer and one of the first electrodes.
5. The light-receiving sensor of claim 4, wherein projections of the plurality of third electrodes onto the substrate are each located within a projection of the gate layer onto the substrate.
6. The light-receiving sensor as recited in claim 4, wherein the third electrode layer is located between the first electrode layer and the source-drain layer.
7. The light-receiving sensor according to claim 1, wherein a second pole of the light-sensing element is connected to a bias power supply terminal, the pixel driving circuit includes a second transistor, a gate of the second transistor is connected to a control signal terminal, a first pole of the second transistor is connected to a second power supply terminal, and a second pole of the second transistor is connected to a gate of the first transistor.
8. The light-receiving sensor as recited in claim 1, wherein the pixel driving circuit comprises a first resistor, the frequency-increasing sub-circuit is connected to the first power supply and a source of the first transistor, a drain of the first transistor is connected to an output terminal of the source follower, and the first resistor is connected to the drain of the first transistor and a second power supply terminal; or (b)
The frequency-increasing sub-circuit is connected with the second power supply end and the drain electrode of the first transistor, the source electrode of the first transistor is connected with the output end of the source follower, and the first resistor is connected with the source electrode of the first transistor and the first power supply end.
9. The light-receiving sensor as recited in claim 8, wherein a second pole of the light-sensing element is connected to the second power supply terminal, and the pixel driving circuit comprises a second resistor, the second resistor being connected to the first power supply terminal and the gate of the first transistor.
10. The light receiving sensor of claim 9, wherein the frequency up sub-circuit comprises a third resistor, a fourth resistor, and a capacitor, the fourth resistor and the capacitor being connected in series to form an RC series circuit, the RC series circuit and the third resistor being connected in parallel.
11. The light-receiving sensor of claim 7, wherein the frequency up sub-circuit connects the first power supply terminal and a source of the first transistor.
12. The light receiving sensor of claim 11, wherein the frequency up sub-circuit comprises a third resistor, a fourth resistor, and a third transistor, the first and second poles of the third transistor each being connected to the fourth resistor to equivalently form an RC series circuit, the RC series circuit being in parallel with the third resistor.
13. The light-receiving sensor as recited in claim 1, wherein the pixel drive circuit comprises a readout sub-circuit comprising:
a gate of the fourth transistor is connected with a scanning control signal, and a first electrode of the fourth transistor is connected with an output end of the source follower;
and the operational amplifier is connected with the second pole of the fourth transistor.
14. The light-receiving sensor according to claim 1, wherein the light-receiving sensor includes a plurality of the photosensitive elements and a plurality of the pixel driving circuits arranged in an array, the photosensitive elements and the pixel driving circuits being in one-to-one correspondence.
15. A display panel comprising the light receiving sensor according to claims 1-14.
16. An electronic device comprising the light receiving sensor of claims 1-14.
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