CN113608197A - Optical antenna, method of manufacturing the same, and optical phased array chip - Google Patents
Optical antenna, method of manufacturing the same, and optical phased array chip Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/491—Details of non-pulse systems
- G01S7/4911—Transmitters
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
- G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
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Abstract
An optical antenna, a method of manufacturing the same, and an optical phased array chip are provided. The optical antenna includes: a dielectric layer; a plurality of antenna structures located in the dielectric layer and spaced apart from each other in a first direction, each of the plurality of antenna structures extending along a second direction that intersects the first direction; and a metal layer located in the dielectric layer opposite the plurality of antenna structures and extending along the second direction, wherein the metal layer has a non-planar surface facing the plurality of antenna structures such that a first portion of light propagating in each of the plurality of antenna structures that exits facing the metal layer is reflected by the non-planar surface and interferes with a second portion of the light that exits facing away from the metal layer.
Description
Technical Field
The present disclosure relates to the field of semiconductor technologies, and in particular, to an optical antenna, a method for manufacturing the optical antenna, and an optical phased array chip.
Background
The laser radar technology is a high-precision 3D image perception technology and is widely applied to the fields of automatic driving, robots, unmanned aerial vehicles and the like. The laser radar technology based on the optical phased array realizes the steering of light beams in space by utilizing the phased array, thereby realizing the pure solid two-dimensional light beam scanning. The optical antenna is a key device in an optical phased array, and the farthest distance which can be measured by the laser radar technology in ranging application is determined by the light spot divergence angle and the emergent light power of emergent light emitted from the optical antenna.
Disclosure of Invention
According to some embodiments of the present disclosure, there is provided an optical antenna including: a dielectric layer; a plurality of antenna structures located in the dielectric layer and spaced apart from each other in a first direction, each of the plurality of antenna structures extending along a second direction that intersects the first direction; and a metal layer located in the dielectric layer opposite the plurality of antenna structures and extending along the second direction, wherein the metal layer has a non-planar surface facing the plurality of antenna structures such that a first portion of light propagating in each of the plurality of antenna structures that exits facing the metal layer is reflected by the non-planar surface and interferes with a second portion of the light that exits facing away from the metal layer.
According to some embodiments of the present disclosure, there is provided an optical phased array chip including the optical antenna as described above.
There is also provided, in accordance with some embodiments of the present disclosure, a method of manufacturing an optical antenna, including: providing a semiconductor-on-insulator substrate, wherein the semiconductor-on-insulator substrate comprises a first dielectric layer and a semiconductor layer which are stacked with each other; forming a plurality of antenna structures spaced apart from each other in a first direction by at least performing a patterning process on the semiconductor layer, each of the plurality of antenna structures extending along a second direction crossing the first direction; and forming a second dielectric layer embedded with a metal layer, the second dielectric layer and the first dielectric layer together coating the plurality of antenna structures, wherein the metal layer has a non-flat surface facing the plurality of antenna structures, so that a first portion of light propagating in each of the plurality of antenna structures that is emitted facing the metal layer is reflected by the non-flat surface and interferes with a second portion of the light that is emitted away from the metal layer.
These and other aspects of the disclosure will be apparent from and elucidated with reference to the embodiments described hereinafter.
Drawings
Further details, features and advantages of the disclosure are disclosed in the following description of exemplary embodiments, taken in conjunction with the accompanying drawings, in which:
fig. 1A-1C are schematic structural diagrams of an optical antenna 100 of some embodiments of the present disclosure;
fig. 2A is a schematic diagram of a far-field amplitude distribution of outgoing light emitted in an optical antenna according to the related art;
fig. 2B is a diagram illustrating a far-field amplitude distribution of outgoing light emitted from an optical antenna according to the related art;
FIG. 2C is a schematic diagram of the far field amplitude distribution of the outgoing light from the optical antenna 100 according to the present disclosure;
3A-3C are schematic structural diagrams of an optical antenna 300 of some embodiments of the present disclosure;
fig. 4A is a schematic diagram of a far-field amplitude distribution of outgoing light emitted in an optical antenna according to the related art;
fig. 4B is a diagram illustrating a far-field amplitude distribution of outgoing light emitted from an optical antenna according to the related art;
FIG. 4C is a schematic diagram of the far field amplitude distribution of the outgoing light from the optical antenna 300 according to the present disclosure;
fig. 5 is a schematic flow diagram of a method 500 of manufacturing an optical antenna, according to some embodiments of the present disclosure;
fig. 6A-6E are schematic cross-sectional structures of semiconductor devices obtained by method 500 according to some embodiments of the present disclosure;
fig. 7 is a flow chart of a process of forming a second dielectric layer embedded with a metal layer in a method 500 according to some embodiments of the present disclosure;
figures 8A-8I are schematic cross-sectional structures of semiconductor devices obtained by method 500 according to some embodiments of the present disclosure;
fig. 9 is a flow diagram of a process of forming multiple antenna structures in a method 500 according to some embodiments of the present disclosure; and
fig. 10 is a flow chart of a process of forming a second dielectric layer embedded with a metal layer in a method 500 according to some embodiments of the present disclosure.
Detailed Description
It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure.
Spatially relative terms such as "below …," "below …," "lower," "below …," "above …," "upper," and the like may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" or "under" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below …" and "below …" may encompass both an orientation above … and below …. Terms such as "before …" or "before …" and "after …" or "next to" may similarly be used, for example, to indicate the order in which light passes through the elements. The devices may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly. In addition, it will also be understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items, and the phrase "at least one of a and B" refers to a alone, B alone, or both a and B.
It will be understood that when an element or layer is referred to as being "on," "connected to," "coupled to" or "adjacent to" another element or layer, it can be directly on, connected to, coupled to or adjacent to the other element or layer or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly connected to," "directly coupled to," or "directly adjacent to" another element or layer, there are no intervening elements or layers present. However, neither "on … nor" directly on … "should be construed as requiring that one layer completely cover an underlying layer in any event.
Embodiments of the present disclosure are described herein with reference to schematic illustrations (and intermediate structures) of idealized embodiments of the present disclosure. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the present disclosure should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present disclosure.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and/or the present specification and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
As used herein, the term "substrate" may refer to a substrate of a diced wafer, or may refer to a substrate of an unslit wafer. Similarly, the terms chip and die may be used interchangeably unless such interchange causes a conflict. It should be understood that the term "film" includes layers, which unless otherwise specified, should not be construed to indicate vertical or horizontal thickness. It should be noted that the thicknesses of the material layers of the optical antenna shown in the figures are merely schematic and do not represent actual thicknesses.
The inventor finds that the far-field intensity of the emergent light emitted by the optical antenna is related to the structure of the optical antenna, and the far-field intensity distribution of the emergent light influences the magnitude of the main lobe light power of the combined light at different scanning angles after the emergent light is combined into the combined light.
According to an aspect of the present disclosure, there is provided an optical antenna that can optimize far-field amplitude distribution, outgoing main lobe power, and utilization rate of outgoing light emitted via the optical antenna by providing a metal layer in a dielectric layer, and the metal layer having a non-flat surface facing an antenna structure.
Fig. 1A is a schematic cross-sectional structure of an optical antenna 100 in a first direction, fig. 1B is a schematic cross-sectional structure of the optical antenna 100 in a second direction, and fig. 1C is a schematic plan structure of an antenna structure in the optical antenna 100 according to some embodiments of the present disclosure.
The structure of the optical antenna 100 is described below with reference to fig. 1A to 1C.
As shown in fig. 1A and 1B, the optical antenna 100 includes a dielectric layer 110 and a plurality of antenna structures 120 located in the dielectric layer 110, the plurality of antenna structures 120 being spaced apart from each other in a first direction, and each of the plurality of antenna structures 120 extending along a second direction crossing the first direction.
According to some embodiments, as shown in fig. 1A-1C, the first direction is an X-direction, the second direction is a Y-direction perpendicular to the X-direction, and the Z-direction is a third direction perpendicular to a plane defined by the first and second directions.
With continued reference to fig. 1A and 1B, optical antenna 100 also includes a metal layer 130 located in dielectric layer 110. The metal layer 130 is opposite to the plurality of antenna structures 120 and extends along the second direction.
The metal layer 130 has a non-planar surface facing the plurality of antenna structures 120 such that a first portion of light propagating in each of the plurality of antenna structures 120 that exits facing the metal layer 130 is reflected by the non-planar surface and interferes with a second portion of the light that exits facing away from the metal layer 130.
As shown in fig. 1B, the light propagating in the antenna structure 120 includes a first portion (as indicated by arrow B) and a second portion (as indicated by arrow a), wherein the first portion exits facing the metal layer 130 and is reflected by the surface of the metal layer 130 facing the antenna structure 120 to form reflected light (as indicated by arrow C).
It should be noted that the term "light propagating in the antenna structure" refers to light transmitted in the antenna structure along the length direction of the antenna structure, and includes light emitted from one end of the antenna structure to the other end along the length direction and light emitted from the side of the antenna structure.
According to the optical antenna disclosed by the embodiment of the disclosure, the metal layer is arranged in the dielectric layer and has the non-flat surface facing the antenna structure, so that the first part of light emitted from the antenna structure to the metal layer is reflected by the non-flat surface to obtain the reflected light with multiple propagation directions. The reflected light can interfere with a second part of light emitted from the antenna structure away from the metal layer to different degrees, so that the far-field amplitude distribution of the emergent light finally emitted through the optical antenna is optimized, namely the emergent light has higher far-field amplitude in a larger scanning angle. Meanwhile, the phenomenon that the reflected light has a single propagation direction in the XZ plane and interferes with the second part of light emitted from the metal layer to cause splitting of far-field amplitude distribution of the emergent light (namely loss of light intensity occurs at the center position of a scanning area) is avoided, so that the emergent light has strong light intensity in a larger scanning angle range after being combined into a beam combining light.
Furthermore, because the metal layer reflects the first part of light emitted towards the metal layer, the reflected light obtained after reflection and the second part of light emitted away from the metal layer have the same or similar propagation directions in a YZ plane, the main lobe power of the light emitted from the optical antenna is increased, the main lobe power of the emergent light after beam combination into combined light is further improved, and the utilization rate of the emergent light is improved.
According to some embodiments, the material of the dielectric layer is a dielectric material with a relatively low refractive index, such as silicon dioxide.
According to some embodiments, the material of the antenna structure is a material with a high refractive index, such as silicon.
In some embodiments, the metal layer is made of a material with high reflectivity, such as titanium nitride, aluminum, copper, and gold, which is not limited herein. The metal layer is made of a material with high reflectivity, so that the intensity of reflected light obtained after the reflection of the metal layer is increased, and the emergent main lobe power of light emitted from the optical antenna is further improved.
In some embodiments, as shown in fig. 1A and 1B, the non-planar surface of the metal layer 130 includes a plurality of concave surfaces 130a juxtaposed along a first direction, wherein each concave surface 130a of the plurality of concave surfaces extends along a second direction and is respectively opposite to each antenna structure 120 of the plurality of antenna structures 120.
By arranging the uneven surface of the metal layer as a concave surface opposite to each antenna structure in the plurality of antenna structures, for each antenna structure in the plurality of antenna structures, the first part of light emitted towards the metal layer is reflected by the corresponding concave surface to obtain reflected light, and the light intensity and the main lobe power of the combined light emitted by the optical antenna are further improved.
In some embodiments, as shown in FIG. 1A, the concave surface 130a is an arcuate surface.
The concave surface is arranged as an arcuate surface such that a first portion of light propagating in the antenna structure has the same or similar optical path difference across a cross-section from the antenna structure to the arcuate surface when directed towards the arcuate surface. Therefore, when the first part of light is reflected by the metal layer and interferes with the second part of light emitted from the metal layer, the same or similar interference effect is achieved at different spatial positions, and the optimization effect of far field amplitude distribution of the emergent light emitted by the optical antenna is further improved.
It is to be understood that the above-described arrangement of the concave surface of the non-flat surface of the metal layer as an arc-shaped surface is merely exemplary. It will be understood by those skilled in the art that in other embodiments, the concave surface 130a may also be configured to have a cross-section in the shape of a "V" or the like, and is not limited herein.
In some embodiments, the radius of curvature of the arcuate surface is greater than 314 nm.
In some embodiments, the distances between the metal layer and the plurality of antenna structures are configured such that the optical path length difference of the reflected first portion of light and the second portion of light is an integer multiple of the wavelength of the light.
With continued reference to fig. 1B, the reflected light (indicated by arrow C) resulting from the reflection of the first portion (indicated by arrow B) of the light propagating in the antenna structure 120 has an optical path length difference with respect to the second portion (indicated by arrow a) that is an integer multiple of the wavelength of the light.
By configuring the distances between the metal layer and the plurality of antenna structures such that the path length difference between the first part of the reflected light and the second part of the light is an integer multiple of the wavelength of the light, when the first part of the reflected light interferes with the second part of the light, the interfered light has enhanced light intensity, and the optimization effect of the far-field amplitude distribution of the emergent light emitted through the optical antenna is further improved.
In some embodiments, the thickness of the metal layer 130 is 50nm or greater.
The structure of each of the plurality of antenna structures is illustratively described below with reference to fig. 1C. According to some embodiments, as shown in fig. 1C, each antenna structure 120 of the plurality of antenna structures 120 includes a body portion 121 extending along the second direction and a plurality of protruding portions 122 protruding from the body portion 121 in a direction parallel to a plane defined by the first and second directions, the plurality of protruding portions 122 being periodically arranged along the second direction.
Since the refractive index of the dielectric layer is lower than the refractive index of the antenna structure, by providing a protruding portion at a side of the antenna structure (i.e. a surface of the body portion in a direction perpendicular to a plane defined by the first direction and the second direction), the protruding portion causes a disturbance to light propagating in the antenna structure. Meanwhile, in the embodiment according to the present disclosure, since the metal layer is disposed below the antenna structure, and the metal layer has the non-flat surface, reflected light obtained after the first part of light propagating in the antenna structure is reflected by the non-flat surface has multiple propagation directions, and the far-field amplitude distribution of the outgoing light emitted through the optical antenna is prevented from being split.
Fig. 2A is a schematic diagram of far-field amplitude distribution of outgoing light emitted from an optical antenna employing the antenna structure of fig. 1C and having no metal layer provided in a dielectric layer according to the related art; fig. 2B is a diagram illustrating a far-field amplitude distribution of outgoing light emitted from an optical antenna employing the antenna structure of fig. 1C and provided with a metal layer having a flat surface in a dielectric layer according to the related art; fig. 2C is a schematic diagram of a far-field amplitude distribution of outgoing light emitted from the optical antenna 100 according to an embodiment of the present disclosure.
As shown in fig. 2A, for the optical antenna adopting the antenna structure of fig. 1C and having no metal layer disposed in the dielectric layer, the far-field amplitude distribution of the outgoing light is split, so that there is a large loss in the central region (extending from 0 ° to the directions on both sides) of the main lobe scanning region. As shown in fig. 2B, with the optical antenna employing the antenna structure of fig. 1C and providing a metal layer having a flat surface in the dielectric layer, the far-field amplitude distribution of the outgoing light does not exhibit a split shape, but the far-field amplitude distribution appears to have a strong light intensity (concentrated around the scanning angle 0 °) in a small scanning angle range. As shown in fig. 2C, with the optical antenna 100 according to the embodiment of the present disclosure, the far-field amplitude of the outgoing light does not exhibit a split shape, and the far-field amplitude distribution appears to have a strong light intensity over a large scanning angle range.
Fig. 3A is a schematic cross-sectional structure of an optical antenna 300 in a first direction, fig. 3B is a schematic cross-sectional structure of the optical antenna 300 in a second direction, and fig. 3C is a schematic plan structure of an antenna structure in the optical antenna 300 according to some embodiments of the present disclosure.
The structure of the optical antenna 300 is described below with reference to fig. 3A-3C.
As shown in fig. 3A and 3B, an optical antenna 300 according to some embodiments of the present disclosure includes a dielectric layer 310 and a plurality of antenna structures 320 located in the dielectric layer 310, the plurality of antenna structures 320 being spaced apart from each other in a first direction, and each antenna structure 320 of the plurality of antenna structures 320 extending along a second direction crossing the first direction.
According to some embodiments, as shown in fig. 3A-3C, the first direction is an X-direction, the second direction is a Y-direction perpendicular to the X-direction, and the Z-direction is a third direction perpendicular to a plane defined by the first and second directions.
With continued reference to fig. 3A and 3B, the optical antenna 300 according to embodiments of the present disclosure further includes a metal layer 330 located in the dielectric layer 310. The metal layer 330 is opposite to the plurality of antenna structures 320 and extends along the second direction.
The metal layer 330 has a non-planar surface facing the plurality of antenna structures 320 such that a first portion of light propagating in each antenna structure 320 of the plurality of antenna structures 320 that exits facing the metal layer 330 is reflected by the non-planar surface and interferes with a second portion of the light that exits facing away from the metal layer 330.
In the optical antenna according to the embodiment of the present disclosure, since the metal layer has the uneven surface facing the antenna structure, after the first part of light emitted from the antenna structure facing the metal layer is reflected by the uneven surface, the first part of light can interfere with the second part of light emitted from the antenna structure away from the metal layer, so as to optimize the far-field amplitude distribution of the emergent light finally emitted through the optical antenna, that is, the emergent light has a higher far-field amplitude in a larger scanning angle. Thus, the emergent light has stronger light intensity in a larger scanning angle range after being combined into combined light.
Meanwhile, because the metal layer is set to be a non-planar structure, the reflected light XZ plane obtained after the first part of light emitted from the antenna structure to the metal layer is reflected by the non-planar surface has multiple propagation directions, and the splitting of the far field amplitude distribution of the emitted light emitted from the optical antenna after the reflected light has a single propagation direction and has the same interference with the second part of light emitted from the metal layer is avoided, namely, the large loss of the intensity of the light in the scanning area (for example, at the central position) is avoided.
Furthermore, because the metal layer reflects the first part of light emitted towards the metal layer, the reflected light obtained after reflection and the second part of light emitted away from the metal layer have the same or similar propagation directions in a YZ plane, the main lobe power of the light emitted from the optical antenna is increased, the main lobe power of the emergent light after beam combination into combined light is further improved, and the utilization rate of the emergent light is improved.
According to some embodiments, the material of the dielectric layer is a dielectric material with a relatively low refractive index, such as silicon dioxide.
According to some embodiments, the material of the antenna structure is a material with a high refractive index, such as silicon.
In some embodiments, the metal layer is made of a material with high reflectivity, such as titanium nitride, aluminum, copper, and gold, which is not limited herein. The metal layer is made of a material with high reflectivity, so that the intensity of reflected light obtained after the reflection of the metal layer is increased, and the emergent main lobe power of light emitted from the optical antenna is further improved.
In some embodiments, as shown in fig. 3A, the non-flat surface of the metal layer 330 includes a plurality of convex surfaces 330a juxtaposed along a first direction, wherein each convex surface 330a of the plurality of convex surfaces extends along a second direction and is respectively opposite to each antenna structure 320 of the plurality of antenna structures 320.
Through set the non-flat surface of metal level to the convex surface relative with each antenna structure in a plurality of antenna structures, to each antenna structure in a plurality of antenna structures, the reflection that all receives the convex surface that corresponds of first part light that deviates from this metal level and jets out obtains the reverberation, has further promoted the light intensity and the main lobe power of the beam combining light of being sent out by optical antenna.
In some embodiments, as shown in fig. 3A, the convex surface 330a is an arcuate surface.
It is to be understood that the above-described arrangement of the convex surface of the non-flat surface of the metal layer as an arc-shaped surface is merely exemplary. It should be understood by those skilled in the art that the convex surface 330a may be provided in other convex shapes in other embodiments, and is not limited herein.
In some embodiments, the distances between the metal layer and the plurality of antenna structures are configured such that the optical path length difference of the reflected first portion of light and the second portion of light is an integer multiple of the wavelength of the light.
By configuring the distances between the metal layer and the plurality of antenna structures such that the path length difference between the first part of the reflected light and the second part of the light is an integer multiple of the wavelength of the light, when the first part of the reflected light interferes with the second part of the light, the interfered light has enhanced light intensity, and the optimization effect of the far-field amplitude distribution of the emergent light emitted through the optical antenna is further improved.
In some embodiments, the metal layer 330 has a thickness of 50nm or more.
With continued reference to fig. 3A-3C, according to some embodiments, each antenna structure 320 of the plurality of antenna structures 320 includes a first antenna layer 320a and a second antenna layer 320b, the first antenna layer 320a and the second antenna layer 320b facing each other in a direction perpendicular to a plane defined by the first direction and the second direction (i.e., the Z-direction), wherein a refractive index of the first antenna layer is greater than or equal to a refractive index of the second antenna layer.
The second antenna layer is arranged right opposite to the first antenna layer, and the refractive index of the second antenna layer is smaller than or equal to that of the first antenna layer, so that the second antenna layer slightly disturbs emergent light emitted by the first antenna layer, a longer optical antenna can be obtained, and the light spot divergence angle of the combined light emitted from the optical antenna can be improved. Meanwhile, when the refractive index of the second antenna layer is smaller than that of the first antenna layer, the disturbance of the second antenna layer on emergent light emitted by the first antenna layer is very slight, so that the precision requirement on the process is lower in the process of manufacturing the optical antenna. Namely, under the lower process precision, the disturbance of emergent light emitted by the first antenna layer can be still very slight, so that the reliability and stability of the process for manufacturing the optical antenna can be improved.
According to some embodiments, the material of the dielectric layer is a dielectric material with a lower refractive index, such as silicon dioxide; the first antenna layer is made of a high-refractive-index material, such as silicon; the second antenna layer is made of a material with a refractive index lower than or equal to that of the first antenna layer and higher than that of the medium layer, such as silicon nitride, polysilicon and the like.
In some embodiments, as shown in fig. 3C, the second antenna layer 320b includes a plurality of grating structures periodically arranged along the second direction.
According to some embodiments, as shown in fig. 3C, a projection of each of the plurality of grating structures on the first antenna layer 320a exceeds a footprint of the first antenna layer 320a in the first direction.
According to other embodiments, as shown in fig. 3A to 3C, the disturbance of the second antenna layer to the outgoing light emitted from the first antenna layer can be further reduced to control the coupling strength by controlling the distance D between the grating structure and the first antenna layer 320a, the width W of the grating structure, and the length L of the grating structure, so as to further improve the divergence angle of the light spot after the light emitted from the optical antenna is combined into the combined light.
Fig. 4A is a schematic view of a far-field amplitude distribution of outgoing light emitted in an optical antenna according to the related art that employs an antenna structure including a first antenna layer and a second antenna layer and does not have a metal layer provided in a dielectric layer, fig. 4B is a schematic view of a far-field amplitude distribution of outgoing light emitted in an optical antenna according to the related art that employs an antenna structure including a first antenna layer and a second antenna layer and provides a metal layer having a flat surface in a dielectric layer, and fig. 4C is a schematic view of a far-field amplitude distribution of outgoing light emitted in an optical antenna 300 according to an embodiment of the present disclosure.
As shown in fig. 4A, for an optical antenna that employs an antenna structure including a first antenna layer and a second antenna layer and does not have a metal layer provided in a dielectric layer, outgoing light has a large light intensity in a small scanning angle range. As shown in fig. 4B, for an optical antenna that employs an antenna structure including a first antenna layer and a second antenna layer and provides a metal layer having a flat surface in a dielectric layer, the outgoing light has a large light intensity in a large scanning angle range, but exhibits a split shape, so that there is a large loss in the central area (extending from 0 ° to both sides) of the main lobe scanning area. As shown in fig. 4C, with the optical antenna 300 according to the embodiment of the present disclosure, the far-field amplitude of the outgoing light does not exhibit a split shape, and the far-field amplitude distribution appears to have a strong light intensity over a large scanning angle range.
It will be understood that, in some embodiments, certain features of the optical antenna 100 described above with respect to fig. 1A-1C and certain features of the optical antenna 300 described with respect to fig. 3A-3C may be combined with one another without conflict. For example, the antenna structure 120 in the optical antenna 100 may be replaced with the antenna structure 320 in the optical antenna 300. For another example, the metal layer 130 in the optical antenna 100 may be replaced with the metal layer 330 in the optical antenna 300.
According to another aspect of the present disclosure, there is also provided an optical phased array chip including the optical antenna as described above.
According to another aspect of the present disclosure, there is provided a method of manufacturing an optical antenna, by which a metal layer is provided in a dielectric layer and has a non-flat surface facing an antenna structure, it is possible to optimize far-field amplitude distribution of outgoing light emitted via the optical antenna, outgoing main lobe power, and utilization rate of the outgoing light. Meanwhile, the method of manufacturing an optical antenna according to the present disclosure may integrate a MEMS manufacturing process.
Fig. 5 illustrates a flow diagram of a method 500 of manufacturing an optical antenna according to some embodiments of the present disclosure. Fig. 6A-6E illustrate schematic cross-sectional structures of semiconductor devices obtained using method 500 according to some embodiments. Fig. 7 illustrates a flow diagram of a process of forming a second dielectric layer embedded with a metal layer in a method 500 according to some embodiments.
As shown in fig. 5, the method 500 includes:
step S510: providing a semiconductor-on-insulator substrate, wherein the semiconductor-on-insulator substrate comprises a first dielectric layer and a semiconductor layer which are stacked with each other;
step S520: forming a plurality of antenna structures spaced apart from each other in a first direction by at least performing a patterning process on the semiconductor layer, each of the plurality of antenna structures extending along a second direction crossing the first direction; and
step S530: forming a second dielectric layer embedded with a metal layer, the second dielectric layer and the first dielectric layer together coating the plurality of antenna structures, wherein the metal layer has a non-flat surface facing the plurality of antenna structures, so that a first portion of light propagating in each of the plurality of antenna structures that is emitted facing the metal layer is reflected by the non-flat surface and interferes with a second portion of the light that is emitted away from the metal layer.
In step S510, as shown in fig. 6A, a semiconductor-on-insulator substrate 600 is provided, wherein the semiconductor substrate 600 includes a first dielectric layer 620 and a semiconductor layer 630 stacked on the dielectric layer. In some embodiments, the semiconductor substrate 600 further includes a supporting substrate layer 610, wherein the first dielectric layer 620 and the semiconductor layer 630 are sequentially stacked on the substrate layer 610.
According to some embodiments, the material of the dielectric layer is a dielectric material with a relatively low refractive index, such as silicon dioxide.
According to some embodiments, the material of the antenna structure is a material with a high refractive index, such as silicon.
According to some embodiments, the semiconductor-on-insulator substrate comprises a silicon-on-insulator substrate, such as an SOI chip or an SOG chip or the like.
It is to be understood that the semiconductor-on-insulator substrate may be a semiconductor substrate in which a chip or a device is formed, or may be a semiconductor substrate in which a chip is not formed, and is not limited herein.
In some embodiments, in step S520, a plurality of antenna structures having the structure of the plurality of antenna structures in the optical antenna described in conjunction with fig. 1A to 1C are formed at least by performing a patterning process on the semiconductor layer 630 on the semiconductor substrate 600. Wherein the plurality of antenna structures are spaced apart from each other in a first direction, each of the plurality of antenna structures extends along a second direction perpendicular to the first direction, and each of the plurality of antenna structures includes a body portion extending along the second direction and a plurality of protruding portions protruding from the body portion in a direction parallel to a plane defined by the first and second directions, the plurality of protruding portions being periodically arranged along the second direction.
In some embodiments, as shown in fig. 6B, a plurality of antenna structures 630a is formed by performing a patterning process on the semiconductor layer 630. The patterning process includes photolithography, etching, and the like, and processes known to those skilled in the art are not described herein.
According to some embodiments, as shown in fig. 7, the forming of the second dielectric layer embedded with the metal layer in step S530 includes:
step S710: forming a first covering layer covering the first dielectric layer and the plurality of antenna structures, wherein a plurality of parts of the first covering layer opposite to the plurality of antenna structures are upwards protruded;
step S720: forming the metal layer at least partially covering the first cover layer; and
step S730: and forming a second covering layer covering the metal layer, wherein the first covering layer and the second covering layer form the second dielectric layer.
In step S710, as shown in fig. 6C, a first cover layer 621 covering the first dielectric layer 620 and the plurality of antenna structures 620a is formed. Since the surface of the plurality of antenna structures 620a is higher than the surface of the first dielectric layer 620, portions of the first cover layer 620 opposite to the plurality of antenna structures 620a protrude upward. In some embodiments, the first cover layer 621 uses the same material layer as the first dielectric layer. According to some embodiments, the first dielectric layer 620 is a silicon oxide layer and the first cover layer 621 is a silicon oxide layer. According to some embodiments, the method of forming the first cover layer 621 includes, but is not limited to, chemical vapor deposition, physical vapor deposition, and the like.
In step S720, as shown in fig. 6D, a metal layer 640 covering the first cover layer 621 is formed. According to some embodiments, the metal layer 640 is made of titanium nitride, aluminum, copper, gold, or other materials with high reflectivity. According to some embodiments, the method of forming the metal layer 640 includes, but is not limited to, sputter deposition and the like.
In step S730, as shown in fig. 6E, a second capping layer 622 is formed to cap the metal layer 640. In some embodiments, the second cover layer 622 and the first cover layer 621 and the first dielectric layer are made of the same material, so that the second dielectric layer formed by the first cover layer 621 and the second cover layer 622 together with the first dielectric layer 620 covers the antenna structure 620 a. According to some embodiments, the first dielectric layer 620 is a silicon oxide layer, the first cover layer 621 is a silicon oxide layer, and the second cover layer 622 is a silicon oxide layer. According to some embodiments, the method of forming the second capping layer 622 includes, but is not limited to, forming the second capping material layer using a deposition process, and performing a planarization process on the second capping material layer through a grinding process to form the second capping layer 624. According to some embodiments, the deposition process includes, but is not limited to, chemical vapor deposition, physical vapor deposition, and the like. According to some embodiments, the polishing process includes, but is not limited to, chemical mechanical polishing, and the like.
According to some embodiments, after step S530 is completed, providing a semiconductor substrate with a device formed thereon, and completing the manufacture of the optical antenna by releasing the supporting substrate layer 610 after bonding the semiconductor substrate with the device formed thereon to the surface of the second dielectric layer.
Fig. 8A-8I illustrate schematic cross-sectional structures of semiconductor devices obtained using method 500 according to some embodiments. Fig. 9 illustrates a flow diagram of a process of forming multiple antenna structures in a method 500 according to some embodiments. Fig. 10 illustrates a flow diagram of a process of forming a second dielectric layer embedded with a metal layer in a method 500 according to some embodiments.
In step S510, as shown in fig. 8A, a semiconductor-on-insulator substrate 800 is provided, wherein the semiconductor substrate 800 includes a first dielectric layer 820 and a semiconductor layer 830 stacked on the dielectric layer. In some embodiments, the semiconductor substrate 800 further comprises a supporting substrate layer 810, wherein the first dielectric layer 820 and the semiconductor layer 830 are sequentially stacked on the substrate layer 810.
According to some embodiments, the material of the dielectric layer is a dielectric material with a relatively low refractive index, such as silicon dioxide.
According to some embodiments, the material of the antenna structure is a material with a high refractive index, such as silicon.
According to some embodiments, the semiconductor-on-insulator substrate comprises a silicon-on-insulator substrate, such as an SOI substrate or an SOG substrate or the like.
In some embodiments, in step S520, a plurality of antenna structures having the structure of the plurality of antenna structures in the optical antenna described in conjunction with fig. 3A-3C are formed at least by performing a patterning process on the semiconductor layer 830 on the semiconductor substrate 800. Wherein each of the plurality of antenna structures includes a first antenna layer and a second antenna layer.
Step S520 of forming the plurality of antenna structures is shown in fig. 9. Referring to fig. 9, step S520 includes:
step S910: forming a plurality of first antenna layers spaced apart from each other in the first direction by performing a patterning process on the semiconductor layer;
step S920: forming a first covering layer covering the first dielectric layer and the plurality of first antenna layers; and
step S930: forming a plurality of second antenna layers on the first cover layer, each second antenna layer facing each first antenna layer in a direction perpendicular to a plane defined by the first direction and the second direction, a refractive index of the first antenna layer being greater than or equal to a refractive index of the second antenna layer.
In step S910, as shown in fig. 8B, a plurality of first antenna layers 830a spaced apart from each other in a first direction are formed by performing a patterning process on the semiconductor layer 830. The patterning process includes photolithography, etching, and the like, and processes known to those skilled in the art are not described herein.
In step S920, as shown in fig. 8C, a first cover layer 821 covering the first dielectric layer 820 and the plurality of first antenna layers 830a is formed. In some embodiments, the first cover layer 821 and the first dielectric layer 820 are formed of the same material layer. According to some embodiments, the first dielectric layer 820 is a silicon oxide layer and the first cover layer 821 is a silicon oxide layer. According to some embodiments, the method of forming the first cover layer 821 includes, but is not limited to, forming the first cover material layer using a deposition process, and performing a planarization process on the first cover material layer through a grinding process to form the first cover layer 821. According to some embodiments, the deposition process includes, but is not limited to, chemical vapor deposition, physical vapor deposition, and the like. According to some embodiments, the polishing process includes, but is not limited to, chemical mechanical polishing, and the like.
In step S930, as shown in fig. 8D, a plurality of second antenna layers 831 are formed on the first cover layer 821, each of the second antenna layers 831 facing each of the first antenna layers 821 in a direction perpendicular to a plane defined by the first direction and the second direction, and the refractive index of the first antenna layer 830a is greater than or equal to the refractive index of the second antenna layer 831.
According to some embodiments, the material of the dielectric layer is a dielectric material with a lower refractive index, such as silicon dioxide; the first antenna layer is made of a high-refractive-index material, such as silicon; the second antenna layer is made of a material with a refractive index lower than or equal to that of the first antenna layer and higher than that of the medium layer, such as silicon nitride, polysilicon and the like.
According to some embodiments, the method of forming the plurality of second antenna layers 831 on the first cover layer 821 includes, but is not limited to, forming the second antenna material layer by using a deposition process, and forming the plurality of second antenna layers 831 by a patterning process after performing a planarization process on the second antenna material layer by using a polishing process. According to some embodiments, the deposition process includes, but is not limited to, chemical vapor deposition, physical vapor deposition, and the like. According to some embodiments, the polishing process includes, but is not limited to, chemical mechanical polishing, and the like. According to some embodiments, the patterning process includes photolithography, etching processes, and the like.
In some embodiments, in the step S520, by controlling the distance between the plurality of second antenna layers 831 and the first antenna layer 830a and the width and length of each of the plurality of second antenna layers 831, the coupling strength between the plurality of second antenna layers 831 can be controlled, the disturbance of the second antenna layers 831 to the outgoing light emitted from the first antenna layer is improved, and the divergence angle of the light spots after the light emitted from the optical antenna is combined into the combined light is further improved.
Step S530 of forming the second dielectric layer embedded with the metal layer is shown in fig. 10. Referring to fig. 10, step S530 includes:
step S1010: forming a second cover layer covering the first cover layer and the plurality of second antenna layers;
step S1020: performing a patterning process on the second cover layer to form a plurality of ridges spaced apart from each other in the first direction, each two adjacent ridges of the plurality of ridges being located over both sides of a corresponding one of the plurality of second antenna layers;
step S1030: forming a third cover layer on the patterned second cover layer, the third cover layer including a plurality of protrusions corresponding to the plurality of ridge stripes, respectively;
step S1040: forming the metal layer at least partially covering the third cover layer; and
step S1050: and forming a fourth covering layer covering the metal layer, wherein the first covering layer, the second covering layer, the third covering layer and the fourth covering layer form the second dielectric layer.
In step S1010, as shown in fig. 8E, a second cover layer 822 covering the first cover layer 821 and the plurality of second antenna layers 831 is formed. In some embodiments, the second cover layer 822 is formed of the same material as the first cover layer 821 and the first dielectric layer 820. According to some embodiments, the first dielectric layer 820 is a silicon oxide layer, the first cover layer 821 is a silicon oxide layer, and the second cover layer 822 is a silicon oxide layer. According to some embodiments, the method of forming the second cover layer 822 includes, but is not limited to, forming the second cover material layer using a deposition process, and performing a planarization process on the second cover material layer through a grinding process to form the second cover layer 822. According to some embodiments, the deposition process includes, but is not limited to, chemical vapor deposition, physical vapor deposition, and the like. According to some embodiments, the polishing process includes, but is not limited to, chemical mechanical polishing, and the like.
In step S1020, as shown in fig. 8F, a patterning process is performed on the second cover layer 822 to form a plurality of ridges 822a spaced apart from each other in the first direction. Each two adjacent ridges 822a of the plurality of ridges 822a are located above both sides of a corresponding one 831 of the plurality of second antenna layers 831.
In step S1030, as shown in fig. 8G, a third cover layer 823 is formed on the patterned second cover layer 822, the third cover layer 823 including a plurality of protrusions, which correspond to the plurality of ridges 822a, respectively. Since the surfaces of the plurality of ridges 822a are higher than the surfaces of the other regions of the second cover layer 822, portions of the third cover layer 823 opposite to the plurality of antenna structures 820a are recessed downward by forming protrusions protruding upward from portions of the plurality of ridges 822 a. In some embodiments, the third cover layer 823 uses the same material layer as the second cover layer 822, the first cover layer 821 and the first dielectric layer 820. According to some embodiments, the first dielectric layer 820 is a silicon oxide layer, the first cover layer 821 is a silicon oxide layer, the second cover layer 822 is a silicon oxide layer, and the third cover layer 823 is a silicon oxide layer. According to some embodiments, the third cap layer 823 is formed by a method including, but not limited to, chemical vapor deposition, physical vapor deposition, and the like.
In step S1040, as shown in fig. 8H, a metal layer 840 is formed at least partially covering the third cover layer 823. According to some embodiments, the metal layer 840 is made of titanium nitride, aluminum, copper, gold, or other materials with high reflectivity. According to some embodiments, the method of forming the metal layer 840 includes, but is not limited to, sputter deposition, and the like.
In step S1050, as shown in fig. 8I, a fourth capping layer 824 is formed overlying the metal layer 840. In some embodiments, the fourth cover layer 824 and the third cover layer 823, the second cover layer 822, the first cover layer 821 and the first dielectric layer 820 are made of the same material layer, so that the second dielectric layer formed by the fourth cover layer 824 and the third cover layer 823, the second cover layer 822 and the first cover layer 821 together with the first dielectric layer 820 covers the antenna structure (including the first antenna layer 830a and the second antenna layer 831). According to some embodiments, the first dielectric layer 820 is a silicon oxide layer, the first cover layer 821 is a silicon oxide layer, the second cover layer 822 is a silicon oxide layer, the third cover layer 823 is a silicon oxide layer, and the fourth cover layer 824 is a silicon oxide layer. According to some embodiments, the method of forming the fourth cap layer 824 includes, but is not limited to, forming the fourth cap material layer by a deposition process, and performing a planarization process on the fourth cap material layer by a grinding process to form the fourth cap layer 824. According to some embodiments, the deposition process includes, but is not limited to, chemical vapor deposition, physical vapor deposition, and the like. According to some embodiments, the polishing process includes, but is not limited to, chemical mechanical polishing, and the like.
According to some embodiments, after step S530 is completed, the semiconductor substrate in which the device is formed is bonded to the surface of the second dielectric layer, and then the supporting substrate layer 810 is released, completing the fabrication of the optical antenna.
While the disclosure has been illustrated and described in detail in the drawings and foregoing description, such illustration and description are to be considered illustrative and exemplary and not restrictive; the present disclosure is not limited to the disclosed embodiments. Variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed subject matter, from a study of the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other elements or steps not listed, the indefinite article "a" or "an" does not exclude a plurality, and the term "a plurality" means two or more. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage.
Claims (15)
1. An optical antenna, comprising:
a dielectric layer;
a plurality of antenna structures located in the dielectric layer and spaced apart from each other in a first direction, each of the plurality of antenna structures extending along a second direction that intersects the first direction; and
a metal layer located in the dielectric layer opposite the plurality of antenna structures and extending along the second direction,
wherein the metal layer has a non-planar surface facing the plurality of antenna structures such that a first portion of light propagating in each of the plurality of antenna structures that exits facing the metal layer is reflected by the non-planar surface and interferes with a second portion of the light that exits facing away from the metal layer.
2. The optical antenna of claim 1, wherein the non-planar surface of the metal layer has a configuration selected from the group consisting of:
the non-planar surface includes a plurality of recessed surfaces juxtaposed along the first direction, wherein each of the plurality of recessed surfaces extends along the second direction and is respectively opposite to each of the plurality of antenna structures; and
the non-planar surface includes a plurality of convex surfaces juxtaposed along the first direction, wherein each of the plurality of convex surfaces extends along the second direction and is respectively opposite to each of the plurality of antenna structures.
3. The optical antenna of claim 2, wherein each of the plurality of concave surfaces and each of the plurality of convex surfaces are arcuate surfaces.
4. The optical antenna of claim 3, wherein the radius of curvature of the arcuate surface is greater than 314 nm.
5. The optical antenna of claim 1, wherein distances between the metal layer and the plurality of antenna structures are configured such that an optical path difference of the first portion of the reflected light and the second portion of the light is an integer multiple of a wavelength of the light.
6. The optical antenna of claim 1, wherein each of the plurality of antenna structures includes a body portion extending along the second direction and a plurality of protruding portions protruding from the body portion in a direction parallel to a plane defined by the first and second directions, the plurality of protruding portions being periodically arranged along the second direction.
7. The optical antenna of claim 1, wherein each of the plurality of antenna structures comprises a first antenna layer and a second antenna layer, the first and second antenna layers directly facing each other in a direction perpendicular to a plane defined by the first and second directions, wherein a refractive index of the first antenna layer is greater than or equal to a refractive index of the second antenna layer.
8. The optical antenna of claim 7, wherein the second antenna layer comprises a plurality of grating structures periodically arranged along the second direction.
9. The optical antenna of claim 8, wherein a projection of each grating structure of the plurality of grating structures on the first antenna layer exceeds a footprint of the first antenna layer in the first direction.
10. The optical antenna of any one of claims 1 to 9, wherein the metal layer comprises at least one selected from the group consisting of: titanium nitride, aluminum, copper, and gold.
11. The optical antenna of any one of claims 1 to 9, wherein the metal layer has a thickness of 50nm or more.
12. An optical phased array chip comprising an optical antenna as claimed in any of claims 1 to 11.
13. A method of manufacturing an optical antenna, comprising:
providing a semiconductor-on-insulator substrate, wherein the semiconductor-on-insulator substrate comprises a first dielectric layer and a semiconductor layer which are stacked with each other;
forming a plurality of antenna structures spaced apart from each other in a first direction by at least performing a patterning process on the semiconductor layer, each of the plurality of antenna structures extending along a second direction crossing the first direction; and
forming a second dielectric layer embedded with a metal layer, the second dielectric layer and the first dielectric layer together coating the plurality of antenna structures, wherein the metal layer has a non-flat surface facing the plurality of antenna structures, so that a first portion of light propagating in each of the plurality of antenna structures that is emitted facing the metal layer is reflected by the non-flat surface and interferes with a second portion of the light that is emitted away from the metal layer.
14. The method of claim 13, wherein the forming a second dielectric layer embedded with a metal layer comprises:
forming a first covering layer covering the first dielectric layer and the plurality of antenna structures, wherein a plurality of parts of the first covering layer opposite to the plurality of antenna structures are upwards protruded;
forming the metal layer at least partially covering the first cover layer; and
and forming a second covering layer covering the metal layer, wherein the first covering layer and the second covering layer form the second dielectric layer.
15. The method of claim 13, wherein each of the plurality of antenna structures comprises a first antenna layer and a second antenna layer,
wherein the forming a plurality of antenna structures comprises:
forming a plurality of first antenna layers spaced apart from each other in the first direction by performing a patterning process on the semiconductor layer;
forming a first covering layer covering the first dielectric layer and the plurality of first antenna layers; and
forming a plurality of second antenna layers on the first cover layer, each second antenna layer facing each first antenna layer in a direction perpendicular to a plane defined by the first direction and the second direction, the first antenna layer having a refractive index greater than or equal to that of the second antenna layer, and
wherein, the forming of the second dielectric layer embedded with the metal layer comprises:
forming a second cover layer covering the first cover layer and the plurality of second antenna layers;
performing a patterning process on the second cover layer to form a plurality of ridges spaced apart from each other in the first direction, each two adjacent ridges of the plurality of ridges being located over both sides of a corresponding one of the plurality of second antenna layers;
forming a third cover layer on the patterned second cover layer, the third cover layer including a plurality of protrusions corresponding to the plurality of ridge stripes, respectively;
forming the metal layer at least partially covering the third cover layer; and
and forming a fourth covering layer covering the metal layer, wherein the first covering layer, the second covering layer, the third covering layer and the fourth covering layer form the second dielectric layer.
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| WO2023005192A1 (en) * | 2021-07-30 | 2023-02-02 | 联合微电子中心有限责任公司 | Optical antenna and manufacturing method therefor, and optical phased array chip |
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| WO2023005192A1 (en) | 2023-02-02 |
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