CN113604099A - Low-dielectric-constant solder resist ink and preparation method thereof - Google Patents
Low-dielectric-constant solder resist ink and preparation method thereof Download PDFInfo
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- CN113604099A CN113604099A CN202110771470.8A CN202110771470A CN113604099A CN 113604099 A CN113604099 A CN 113604099A CN 202110771470 A CN202110771470 A CN 202110771470A CN 113604099 A CN113604099 A CN 113604099A
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- parts
- polytetrafluoroethylene
- silicon dioxide
- solder resist
- resist ink
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- 229910000679 solder Inorganic materials 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 67
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 42
- 239000003822 epoxy resin Substances 0.000 claims abstract description 32
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 32
- 229920000728 polyester Polymers 0.000 claims abstract description 32
- 239000000203 mixture Substances 0.000 claims abstract description 31
- -1 polytetrafluoroethylene Polymers 0.000 claims abstract description 27
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims abstract description 27
- 239000004810 polytetrafluoroethylene Substances 0.000 claims abstract description 27
- 239000004925 Acrylic resin Substances 0.000 claims abstract description 23
- 229920000178 Acrylic resin Polymers 0.000 claims abstract description 23
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 21
- 239000003960 organic solvent Substances 0.000 claims abstract description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical group OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 27
- 239000002253 acid Substances 0.000 claims description 11
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 9
- 239000002270 dispersing agent Substances 0.000 claims description 9
- 239000010419 fine particle Substances 0.000 claims description 9
- 238000003756 stirring Methods 0.000 claims description 9
- 239000000843 powder Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 3
- 239000000463 material Substances 0.000 abstract description 5
- 239000000976 ink Substances 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- XUIMIQQOPSSXEZ-NJFSPNSNSA-N silicon-30 atom Chemical group [30Si] XUIMIQQOPSSXEZ-NJFSPNSNSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/10—Printing inks based on artificial resins
- C09D11/102—Printing inks based on artificial resins containing macromolecular compounds obtained by reactions other than those only involving unsaturated carbon-to-carbon bonds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/10—Printing inks based on artificial resins
- C09D11/102—Printing inks based on artificial resins containing macromolecular compounds obtained by reactions other than those only involving unsaturated carbon-to-carbon bonds
- C09D11/104—Polyesters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/10—Printing inks based on artificial resins
- C09D11/106—Printing inks based on artificial resins containing macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Processes Of Treating Macromolecular Substances (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
The invention discloses a low dielectric constant solder resist ink and a preparation method thereof, belonging to the field of solder resist ink preparation, wherein the solder resist ink is prepared from the following components in parts by mass: 80-100 parts of polyester acrylic resin; 80-100 parts of epoxy resin; 40-60 parts of silicon dioxide; 20-30 parts of polytetrafluoroethylene; 1-10 parts of a pH regulator; 10-20 parts of an organic solvent. In the invention, the polytetrafluoroethylene-silicon dioxide blend is used as a component of the solder resist ink, polytetrafluoroethylene is a material with good dielectric property, but because the mechanical strength of polytetrafluoroethylene is not high, the polytetrafluoroethylene-silicon dioxide blend is adopted in the invention, so that the mechanical strength of polytetrafluoroethylene is improved, and the solder resist ink has low dielectric constant and higher mechanical strength.
Description
Technical Field
The invention belongs to the field of solder resist ink preparation, and particularly relates to a low-dielectric-constant solder resist ink and a preparation method thereof.
Background
With the rapid development of technology and the coming of the 5G era, the requirements for printed circuit boards are also increasing, wherein the performance composition of solder resist ink on the printed circuit boards is the determining performance of the printed circuit boards. Therefore, whether the solder resist ink on the printed circuit board has a low dielectric constant is also a key factor for determining the performance of the 5G device. However, the most straightforward approach in the prior art is to use low dielectric constant ink materials in solder resist inks. Low dielectric constant materials, otherwise known as low-K materials, are used to reduce the leakage current of integrated circuits by reducing the dielectric constant of the dielectric material used in printed circuit boards. Therefore, selecting a reasonable low dielectric constant solder resist ink material becomes a difficult problem for those skilled in the art.
Disclosure of Invention
Aiming at the problems in the prior art, the invention discloses low-dielectric-constant solder resist ink and a preparation method thereof, and the solder resist ink disclosed by the invention is low-dielectric-constant solder resist ink by adding a multi-component combination in the solder resist ink, so that the requirements of a printed circuit board in the 5G era can be met.
The invention is realized by the following steps:
the low-dielectric-constant solder resist ink is characterized by being prepared from the following components in parts by mass: 80-100 parts of polyester acrylic resin; 80-100 parts of epoxy resin; 40-60 parts of silicon dioxide; 20-30 parts of polytetrafluoroethylene; 1-10 parts of a pH regulator; 10-20 parts of an organic solvent.
Further, the mass part ratio of the polyester acrylic resin to the epoxy resin is 1: 1.
Further, the silicon dioxide is nano silicon dioxide powder, and the particle size of the powder is 60-90 nm.
Further, the mass part ratio of the silicon dioxide to the polytetrafluoroethylene is 2: 1.
The invention also discloses a preparation method of the low-dielectric-constant solder resist ink, which is characterized by comprising the following steps:
step one, adding 40-60 parts of silicon dioxide and 20-30 parts of polytetrafluoroethylene according to the proportion of 2:1 to form a polytetrafluoroethylene-silicon dioxide blend, wherein the silicon dioxide can enhance the mechanical strength of the polytetrafluoroethylene;
step two, mixing 80-100 parts of polyester acrylic resin with 80-100 parts of epoxy resin, fully mixing the polyester acrylic resin with the epoxy resin by using a high-speed dispersant, and dispersing until the fineness is less than or equal to 10 microns after uniform mixing;
adding the fine particles of the polyester acrylic resin-epoxy resin prepared in the step two into the polytetrafluoroethylene-silicon dioxide blend prepared in the step one, simultaneously adding 10-20 parts of organic solvent, and uniformly stirring;
and step four, measuring the PH value in the step three, and adding 1-10 parts of a PH regulator to ensure that the acid value of the mixture is between 80 and 85.
Further, the organic solvent is ethylene glycol.
Compared with the prior art, the invention has the beneficial effects that:
in the invention, the acid value of the solder resist ink is controlled to be 80-85 by using a PH regulator, so that the solder resist ink is prevented from being high in acid value and slow in curing; in addition, the polytetrafluoroethylene-silicon dioxide blend is used as a component of the solder resist ink, polytetrafluoroethylene is a good dielectric material, but the mechanical strength of polytetrafluoroethylene is not high, and the polytetrafluoroethylene-silicon dioxide blend is adopted in the invention, so that the mechanical strength of polytetrafluoroethylene is improved, the solder resist ink has low dielectric constant, and meanwhile, higher mechanical strength is also endowed.
Detailed Description
In order to make the objects, technical solutions and effects of the present invention more clear, the present invention is further described in detail by the following examples. It should be noted that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1
Step one, adding 40 parts of silicon dioxide and 20 parts of polytetrafluoroethylene according to the proportion of 2:1 to form a polytetrafluoroethylene-silicon dioxide blend, wherein the silicon dioxide can enhance the mechanical strength of the polytetrafluoroethylene;
step two, 89 parts of polyester acrylic resin is mixed with 89 parts of epoxy resin, the polyester acrylic resin and the epoxy resin are fully mixed by using a high-speed dispersant, and the mixture is uniformly mixed and then dispersed until the fineness is less than or equal to 10 microns;
step three, adding the fine particles of the polyester acrylic resin-epoxy resin prepared in the step two into the polytetrafluoroethylene-silicon dioxide blend prepared in the step one, simultaneously adding 17 parts of ethylene glycol, and uniformly stirring;
and step four, measuring the PH value in the step three, and adding 1-10 parts of a PH regulator to ensure that the acid value of the mixture is between 80 and 85.
Example 2
Step one, adding 40 parts of silicon dioxide and 20 parts of polytetrafluoroethylene according to the proportion of 2:1 to form a polytetrafluoroethylene-silicon dioxide blend, wherein the silicon dioxide can enhance the mechanical strength of the polytetrafluoroethylene;
step two, mixing 80 parts of polyester acrylic resin with 80 parts of epoxy resin, fully mixing the polyester acrylic resin with the epoxy resin by using a high-speed dispersant, and dispersing until the fineness is less than or equal to 10 micrometers after uniform mixing;
step three, adding the fine particles of the polyester acrylic resin-epoxy resin prepared in the step two into the polytetrafluoroethylene-silicon dioxide blend prepared in the step one, simultaneously adding 10 parts of ethylene glycol, and uniformly stirring;
and step four, measuring the PH value in the step three, and adding 1-10 parts of a PH regulator to ensure that the acid value of the mixture is between 80 and 85.
Example 3
Step one, adding 60 parts of silicon dioxide and 30 parts of polytetrafluoroethylene according to the proportion of 2:1 to form a polytetrafluoroethylene-silicon dioxide blend, wherein the silicon dioxide can enhance the mechanical strength of the polytetrafluoroethylene;
step two, mixing 100 parts of polyester acrylic resin with 100 parts of epoxy resin, fully mixing the polyester acrylic resin with the epoxy resin by using a high-speed dispersant, and dispersing until the fineness is less than or equal to 10 micrometers after uniform mixing;
step three, adding the fine particles of the polyester acrylic resin-epoxy resin prepared in the step two into the polytetrafluoroethylene-silicon dioxide blend prepared in the step one, simultaneously adding 20 parts of ethylene glycol, and uniformly stirring;
and step four, measuring the PH value in the step three, and adding 1-10 parts of a PH regulator to ensure that the acid value of the mixture is between 80 and 85.
Example 4
Step one, adding 50 parts of silicon dioxide and 25 parts of polytetrafluoroethylene according to the proportion of 2:1 to form a polytetrafluoroethylene-silicon dioxide blend, wherein the silicon dioxide can enhance the mechanical strength of the polytetrafluoroethylene;
step two, mixing 90 parts of polyester acrylic resin with 90 parts of epoxy resin, fully mixing the polyester acrylic resin with the epoxy resin by using a high-speed dispersant, and dispersing until the fineness is less than or equal to 10 micrometers after uniform mixing;
step three, adding the fine particles of the polyester acrylic resin-epoxy resin prepared in the step two into the polytetrafluoroethylene-silicon dioxide blend prepared in the step one, simultaneously adding 16 parts of ethylene glycol, and uniformly stirring;
and step four, measuring the PH value in the step three, and adding 1-10 parts of a PH regulator to ensure that the acid value of the mixture is between 80 and 85.
Example 5
Step one, adding 52 parts of silicon dioxide and 26 parts of polytetrafluoroethylene according to the ratio of 2:1 to form a polytetrafluoroethylene-silicon dioxide blend, wherein the silicon dioxide can enhance the mechanical strength of the polytetrafluoroethylene;
step two, mixing 99 parts of polyester acrylic resin with 99 parts of epoxy resin, fully mixing the polyester acrylic resin with the epoxy resin by using a high-speed dispersant, and dispersing until the fineness is less than or equal to 10 micrometers after uniform mixing;
step three, adding the fine particles of the polyester acrylic resin-epoxy resin prepared in the step two into the polytetrafluoroethylene-silicon dioxide blend prepared in the step one, simultaneously adding 17 parts of ethylene glycol, and uniformly stirring;
and step four, measuring the PH value in the step three, and adding 1-10 parts of a PH regulator to ensure that the acid value of the mixture is between 80 and 85.
Comparative example 1
Step one, 89 parts of polyester acrylic resin is mixed with 89 parts of epoxy resin, the polyester acrylic resin and the epoxy resin are fully mixed by using a high-speed dispersant, and the mixture is uniformly mixed and then dispersed until the fineness is less than or equal to 10 microns;
step two, adding the fine particles of the polyester acrylic resin-epoxy resin prepared in the step two into 20 parts of polytetrafluoroethylene, simultaneously adding 17 parts of ethylene glycol, and uniformly stirring;
and step three, measuring the PH value in the step three, and adding 1-10 parts of a PH regulator to ensure that the acid value of the mixture is between 80 and 85.
This comparative example differs from example 1 in that no silica is added.
Comparative example 2
Step one, 89 parts of polyester acrylic resin is mixed with 89 parts of epoxy resin, the polyester acrylic resin and the epoxy resin are fully mixed by using a high-speed dispersant, and the mixture is uniformly mixed and then dispersed until the fineness is less than or equal to 10 microns;
step two, adding the fine particles of the polyester acrylic resin-epoxy resin prepared in the step two into 40 parts of silicon dioxide, simultaneously adding 17 parts of ethylene glycol, and uniformly stirring;
and step three, measuring the PH value in the step three, and adding 1-10 parts of a PH regulator to ensure that the acid value of the mixture is between 80 and 85.
This comparative example differs from example 1 in that: no 20 parts of polytetrafluoroethylene were added.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that modifications can be made by those skilled in the art without departing from the principle of the present invention, and these modifications should also be construed as the protection scope of the present invention.
Claims (6)
1. The low-dielectric-constant solder resist ink is characterized by being prepared from the following components in parts by mass:
80-100 parts of polyester acrylic resin;
80-100 parts of epoxy resin;
40-60 parts of silicon dioxide;
20-30 parts of polytetrafluoroethylene;
1-10 parts of a pH regulator;
10-20 parts of an organic solvent.
2. The low dielectric constant solder resist ink as claimed in claim 1, wherein the ratio of the polyester acrylic resin to the epoxy resin is 1:1 by weight.
3. The low dielectric constant solder resist ink as claimed in claim 1, wherein the silica is nano silica powder, and the particle size of the powder is 60-90 nm.
4. The low dielectric constant solder resist ink as defined in claim 1, wherein the mass part ratio of the silicon dioxide to the polytetrafluoroethylene is 2: 1.
5. The method for preparing the low dielectric constant solder resist ink as claimed in any one of claims 1 to 4, wherein the method specifically comprises:
step one, adding 40-60 parts of silicon dioxide and 20-30 parts of polytetrafluoroethylene according to the proportion of 2:1 to form a polytetrafluoroethylene-silicon dioxide blend, wherein the silicon dioxide can enhance the mechanical strength of the polytetrafluoroethylene;
step two, mixing 80-100 parts of polyester acrylic resin with 80-100 parts of epoxy resin, fully mixing the polyester acrylic resin with the epoxy resin by using a high-speed dispersant, and dispersing until the fineness is less than or equal to 10 microns after uniform mixing;
adding the fine particles of the polyester acrylic resin-epoxy resin prepared in the step two into the polytetrafluoroethylene-silicon dioxide blend prepared in the step one, simultaneously adding 10-20 parts of organic solvent, and uniformly stirring;
and step four, measuring the PH value in the step three, and adding 1-10 parts of a PH regulator to ensure that the acid value of the mixture is between 80 and 85.
6. The method of claim 5, wherein the organic solvent is ethylene glycol.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110771470.8A CN113604099A (en) | 2021-07-08 | 2021-07-08 | Low-dielectric-constant solder resist ink and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110771470.8A CN113604099A (en) | 2021-07-08 | 2021-07-08 | Low-dielectric-constant solder resist ink and preparation method thereof |
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| Publication Number | Publication Date |
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| CN113604099A true CN113604099A (en) | 2021-11-05 |
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| CN202110771470.8A Pending CN113604099A (en) | 2021-07-08 | 2021-07-08 | Low-dielectric-constant solder resist ink and preparation method thereof |
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102950852A (en) * | 2011-08-31 | 2013-03-06 | 深圳光启高等理工研究院 | Metamaterial dielectric substrate material and processing method thereof |
| CN108287451A (en) * | 2018-01-24 | 2018-07-17 | 浙江福斯特新材料研究院有限公司 | A kind of photosensitive cover film resin combination of low dielectric |
| CN110054929A (en) * | 2019-02-13 | 2019-07-26 | 盐城艾肯科技有限公司 | One kind having imide structure photosensitive-ink and its application |
| CN110172165A (en) * | 2019-06-14 | 2019-08-27 | 铜陵华科电子材料有限公司 | A kind of preparation method of silica-filled polytetrafluoroethyldispersion dispersion |
| CN110554567A (en) * | 2019-08-28 | 2019-12-10 | 浙江福斯特新材料研究院有限公司 | resin composition and use thereof |
| CN110643022A (en) * | 2019-11-05 | 2020-01-03 | 惠州巨润科技有限公司 | Modified light-cured polyester acrylic resin and synthetic method thereof |
| CN111117347A (en) * | 2019-12-26 | 2020-05-08 | 上海维凯光电新材料有限公司 | Rapid printing etching-resistant ink |
| CN111154327A (en) * | 2020-01-08 | 2020-05-15 | 江门市阪桥电子材料有限公司 | POSS (polyhedral oligomeric silsesquioxane) modified photosensitive solder resist ink with low dielectric constant and preparation method thereof |
| CN111269611A (en) * | 2020-03-25 | 2020-06-12 | 广东三求光固材料股份有限公司 | Photo-curing and thermosetting composition and application thereof |
| CN113025117A (en) * | 2020-08-20 | 2021-06-25 | 深圳市百柔新材料技术有限公司 | Solder resist ink, preparation method and use method thereof, and printed circuit board |
-
2021
- 2021-07-08 CN CN202110771470.8A patent/CN113604099A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102950852A (en) * | 2011-08-31 | 2013-03-06 | 深圳光启高等理工研究院 | Metamaterial dielectric substrate material and processing method thereof |
| CN108287451A (en) * | 2018-01-24 | 2018-07-17 | 浙江福斯特新材料研究院有限公司 | A kind of photosensitive cover film resin combination of low dielectric |
| CN110054929A (en) * | 2019-02-13 | 2019-07-26 | 盐城艾肯科技有限公司 | One kind having imide structure photosensitive-ink and its application |
| CN110172165A (en) * | 2019-06-14 | 2019-08-27 | 铜陵华科电子材料有限公司 | A kind of preparation method of silica-filled polytetrafluoroethyldispersion dispersion |
| CN110554567A (en) * | 2019-08-28 | 2019-12-10 | 浙江福斯特新材料研究院有限公司 | resin composition and use thereof |
| CN110643022A (en) * | 2019-11-05 | 2020-01-03 | 惠州巨润科技有限公司 | Modified light-cured polyester acrylic resin and synthetic method thereof |
| CN111117347A (en) * | 2019-12-26 | 2020-05-08 | 上海维凯光电新材料有限公司 | Rapid printing etching-resistant ink |
| CN111154327A (en) * | 2020-01-08 | 2020-05-15 | 江门市阪桥电子材料有限公司 | POSS (polyhedral oligomeric silsesquioxane) modified photosensitive solder resist ink with low dielectric constant and preparation method thereof |
| CN111269611A (en) * | 2020-03-25 | 2020-06-12 | 广东三求光固材料股份有限公司 | Photo-curing and thermosetting composition and application thereof |
| CN113025117A (en) * | 2020-08-20 | 2021-06-25 | 深圳市百柔新材料技术有限公司 | Solder resist ink, preparation method and use method thereof, and printed circuit board |
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Application publication date: 20211105 |
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