CN113584561A - Electroplating equipment for solar cell electrode and solar cell manufacturing method - Google Patents
Electroplating equipment for solar cell electrode and solar cell manufacturing method Download PDFInfo
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- CN113584561A CN113584561A CN202111013160.6A CN202111013160A CN113584561A CN 113584561 A CN113584561 A CN 113584561A CN 202111013160 A CN202111013160 A CN 202111013160A CN 113584561 A CN113584561 A CN 113584561A
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- 238000009713 electroplating Methods 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 71
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 71
- 238000007650 screen-printing Methods 0.000 claims abstract description 27
- 238000007747 plating Methods 0.000 claims abstract description 24
- 238000003860 storage Methods 0.000 claims abstract description 24
- 238000003825 pressing Methods 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000011068 loading method Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 238000002161 passivation Methods 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 230000005641 tunneling Effects 0.000 claims description 7
- 239000007788 liquid Substances 0.000 abstract description 8
- 239000002608 ionic liquid Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000010992 reflux Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- -1 silver aluminum Chemical compound 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- FQERWQCDIIMLHB-UHFFFAOYSA-N 1-ethyl-3-methyl-1,2-dihydroimidazol-1-ium;chloride Chemical compound [Cl-].CC[NH+]1CN(C)C=C1 FQERWQCDIIMLHB-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/004—Sealing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
- C25D17/08—Supporting racks, i.e. not for suspending
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/66—Electroplating: Baths therefor from melts
- C25D3/665—Electroplating: Baths therefor from melts from ionic liquids
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
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- Organic Chemistry (AREA)
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- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The application discloses electroplating equipment for a solar cell electrode and a solar cell manufacturing method, wherein the electroplating equipment comprises a shell with a first opening; a storage tank arranged in the shell and used for storing electroplating liquid; the aluminum plate is arranged at the opening of the storage tank and is provided with a water feeding hole; the baffle is arranged on the upper surface of the aluminum plate and is oppositely arranged; the screen plate carrying platform is arranged on the baffle plate and connected with the edge of the first opening of the shell; the screen printing plate is arranged on the upper surface of the screen printing plate loading platform and used for placing the battery piece; a pressing plate arranged above the screen printing plate; and the screen plate carrying platform and the screen plate are both provided with second openings consistent with the fine grid line patterns. The inside of casing is located to the holding tank, and the holding tank top is equipped with aluminum plate, half tone board microscope carrier and half tone board, and half tone board microscope carrier and half tone board are equipped with the second opening unanimous with the thin grid line figure of battery piece, because half tone board microscope carrier is connected with the first opening edge of casing, make casing inside seal when electroplating, effectively avoid plating solution and air to contact, prolong the life of plating solution.
Description
Technical Field
The application relates to the technical field of photovoltaics, in particular to electroplating equipment for a solar cell electrode and a solar cell manufacturing method.
Background
The back surface of the TOPCon (Tunnel Oxide Passivated Contact) cell is composed of a Tunnel Oxide layer and a doped polycrystalline silicon layer, so that the recombination of a metal Contact area can be remarkably reduced, and the TOPCon cell has good Contact performance and can greatly improve the efficiency of a solar cell.
The TOPCon battery adopts a screen printing mode to prepare the front electrode, the front main grid line is a silver main grid, the front auxiliary grid line is a silver aluminum grid line, the printing cost of silver aluminum paste is high, in order to reduce the cost, a local field passivation effect is formed at the grid line position, the silver aluminum grid line can be changed into an aluminum grid line, the cost can be saved, and P can be formed at the grid line position++And the layer forms a local field passivation effect to achieve the effect of improving the open-circuit voltage and improving the efficiency. At present, there are two ways to prepare the front aluminum grid line, the first is to adopt screen printing, the second is to adopt chain electroplating, there are the following defects respectively: the first method for printing aluminum paste has serious overflow of aluminum paste, poor plasticity of aluminum grid wire and aluminum gridThe aspect ratio of the line is low, so that the effective light receiving area of the solar cell is small, and the carrier collection efficiency is low; the second kind of electroplating aluminium needs to use ionic liquid plating solution, and ionic liquid is comparatively strict to the environmental requirement, need accomplish anhydrous anaerobic, consequently need strictly seal the chain board, otherwise the plating solution became invalid, and hardly realize sealing completely the board.
Therefore, how to solve the above technical problems should be a great concern to those skilled in the art.
Disclosure of Invention
The application aims to provide electroplating equipment for a solar cell electrode and a solar cell manufacturing method, so that the width of an aluminum grid line is reduced, and the service life of ionic liquid is prolonged.
In order to solve the above technical problem, the present application provides an electroplating apparatus for a solar cell electrode, comprising:
a housing having a first opening;
a storage tank arranged in the shell and used for storing electroplating liquid;
the aluminum plate is arranged at the opening of the storage tank and is provided with a water feeding hole;
the baffle is arranged on the upper surface of the aluminum plate and is oppositely arranged;
the screen plate carrying platform is arranged on the baffle plate and connected with the edge of the first opening of the shell;
the screen printing plate is arranged on the upper surface of the screen printing plate loading platform and used for placing a battery piece;
the pressing plate is arranged above the screen printing plate;
and the screen plate carrier and the screen plate are both provided with second openings consistent with the fine grid line patterns.
Optionally, the baffle is provided with a backflow port and a blocking piece matched with the backflow port.
Optionally, the aluminum plate is provided with a plurality of water feeding holes which are uniformly distributed.
Optionally, the surface of the aluminum plate is a polished smooth surface.
Optionally, the method further includes:
a pulsed current source for applying a pulsed current between the aluminum plate and the platen.
Optionally, the method further includes:
and the mechanical arm is connected with the pressing plate.
Optionally, one side of the shell, which is close to and parallel to the screen carrying platform, is recessed to form a receiving groove, the side wall of the receiving groove is obliquely arranged, and the first opening is located at the bottom of the receiving groove.
The application also provides a solar cell manufacturing method, which comprises the following steps:
obtaining a cell piece prefabricated body, wherein the cell piece prefabricated body comprises a first passivation layer, an anti-reflection layer, an emitter layer, a silicon chip, a tunneling layer, a doped polycrystalline silicon layer and a second passivation layer which are sequentially stacked from top to bottom;
performing laser grooving on the upper surface of the cell sheet prefabricated body to form a fine grid line pattern;
screen printing a back main grid line and a thin grid line on the lower surface of the cell slice prefabricated body;
placing the cell piece prefabricated body on a screen printing plate of any one of the electroplating devices for the solar cell electrode, wherein the fine grid line pattern corresponds to a second opening of the screen printing plate, and a pressing plate is in contact with the lower surface of the cell piece prefabricated body;
the electroplating solution in the storage tank is in contact with the fine grid line pattern region through the upper water hole of the aluminum plate and the second opening, and is electrified for electroplating, so that an aluminum fine grid line is formed on the upper surface of the cell sheet prefabricated body;
and screen printing a main grid line on the upper surface of the cell sheet prefabricated body to obtain the solar cell.
Optionally, before the obtaining of the battery sheet preform, the method further includes:
and texturing the silicon wafer.
Optionally, the electrified current is pulse current, and the pulse current is 1A/cm2～15A/cm2。
The application provides an electroplating device for solar cell electrode, includes: a housing having a first opening; a storage tank arranged in the shell and used for storing electroplating liquid; the aluminum plate is arranged at the opening of the storage tank and is provided with a water feeding hole; the baffle is arranged on the upper surface of the aluminum plate and is oppositely arranged; the screen plate carrying platform is arranged on the baffle plate and connected with the edge of the first opening of the shell; the screen printing plate is arranged on the upper surface of the screen printing plate loading platform and used for placing a battery piece; the pressing plate is arranged above the screen printing plate; and the screen plate carrier and the screen plate are both provided with second openings consistent with the fine grid line patterns.
Therefore, the storage tank in the electroplating device is arranged in the shell, an aluminum plate and a screen plate loading platform are arranged above the storage tank, a screen plate is arranged on the screen plate loading platform, the screen plate loading platform and the screen plate are provided with second openings consistent with the fine grid line patterns of the battery piece, when in electroplating, the electroplating solution is contacted with the cell through the water feeding port and the second opening of the aluminum plate, the pressing plate is contacted with the surface opposite to the surface of the cell fine grid line pattern, the aluminum plate is used as an anode, the pressing plate is used as a cathode, the aluminum thin grid line is formed in the area where the thin grid line pattern is positioned by electroplating, the aluminum thin grid line formed by electroplating has strong plasticity and narrow width, the aspect ratio of the aluminum thin grid line is increased, and the screen plate carrying platform is connected with the edge of the first opening of the shell, when electroplating the battery piece for casing internal seal effectively avoids plating solution and air to contact, prolongs the life of plating solution.
In addition, the application also provides a manufacturing method of the solar cell.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an electroplating apparatus for a solar cell electrode according to an embodiment of the present disclosure;
FIG. 2 is a top view of an aluminum plate according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of another electroplating apparatus for a solar cell electrode according to an embodiment of the present disclosure;
fig. 4 is a flowchart of a method for manufacturing a solar cell according to an embodiment of the present disclosure.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background section, there are two methods for manufacturing the front aluminum gate line, the first method is screen printing, and the second method is chain electroplating, which have the following defects: the first method is used for printing the aluminum paste, the aluminum paste is seriously overflowed, the plasticity of the aluminum grid lines is poor, and the height-width ratio of the aluminum grid lines is low, so that the effective light receiving area of the solar cell is small, and the carrier collection efficiency is low; the second kind of electroplating aluminium needs to use ionic liquid plating solution, and ionic liquid is comparatively strict to the environmental requirement, need accomplish anhydrous anaerobic, consequently need strictly seal the chain board, otherwise the plating solution became invalid, and hardly realize sealing completely the board.
In view of the above, the present application provides an electroplating apparatus for a solar cell electrode, please refer to fig. 1, where fig. 1 is a schematic structural diagram of an electroplating apparatus for a solar cell electrode according to an embodiment of the present application, including:
a housing 1 having a first opening;
a storage tank 2 provided in the casing 1 for storing plating liquid;
the aluminum plate 3 is arranged at the opening of the storage tank 2, and the aluminum plate 3 is provided with a water feeding hole;
the baffle plates 4 are arranged on the upper surface of the aluminum plate 3 and are oppositely arranged;
the screen plate carrier 5 is arranged on the baffle plate 4 and is connected with the edge of the first opening of the shell 1;
the screen 6 is arranged on the upper surface of the screen carrier 5 and used for placing a battery piece;
a pressing plate 7 arranged above the screen 6;
wherein, the screen plate carrying platform 5 and the screen plate 6 are both provided with second openings consistent with the fine grid line patterns.
In the present application, the shape of the housing 1 is not limited, and may be set by itself. For example, it may be a rectangular parallelepiped, a cube, a cylinder, or an irregular shape, etc.
It should be noted that, the shape of the water supply hole is not specifically limited in this application, and the water supply hole can be set by itself. For example, the shape of the upper water hole may be circular, rectangular, oval, star-shaped, and the like.
The arrangement of the housing 1 around the first opening is not limited in this application, and alternatively, as shown in fig. 1, the housing 1 around the first opening is horizontal and parallel to the horizontal direction.
Optionally, in order to improve the uniformity of the electroplating solution during upward conveying and ensure the uniformity of the electroplating speed at each position of the electroplated aluminum fine grid line, the aluminum plate 3 is provided with a plurality of uniformly distributed water feeding holes 8, as shown in fig. 2. However, this is not particularly limited, and the water supply holes may be unevenly distributed in the aluminum sheet 3.
The screen plate carrier 5 is arranged on the baffle plate 4 and is connected with the edge of the first opening of the shell 1, namely, the screen plate carrier 5 seals the first opening of the shell 1, when the battery piece is placed on the screen plate 6 to electroplate the battery piece, the shell 1 is completely sealed, the electroplating solution cannot contact with air, and the service life of the electroplating solution is prolonged.
The screen carrying platform 5 and the screen 6 are provided with second openings consistent with the fine grid line patterns of the battery piece, and the purpose is to contact the positions of the battery piece where the fine grid lines need to be arranged after the electroplating solution passes through the water feeding holes, the second openings of the screen carrying platform 5 and the screen 6, so as to carry out electroplating, and form the required aluminum fine grid lines on the battery piece.
During electroplating, the aluminum plate 3 serves as an anode, the pressing plate 7 serves as a cathode, the front surface of the cell is in contact with the screen 6, the pressing plate 7 needs to be pressed on the back surface of the cell, and after the electroplating is finished, the pressing plate 7 is removed. In order to raise the speed of the pressing plate 7 when it is sub-mounted on the cell and removed, the plating apparatus further comprises: and the mechanical arm is connected with the pressing plate 7, and the position of the pressing plate 7 is adjusted by the mechanical arm. Of course, the operation may be performed manually.
The roughness of the surface of the aluminum sheet 3 is not particularly limited in this application, as the case may be. Preferably, the surface of the aluminum plate 3 is a polished smooth surface to increase the electroplating speed and increase the aluminum content of the aluminum fine grid lines, so as to improve the field passivation effect of the cell.
In order to increase the water supply rate of the plating liquid in the storage tank 2, the plating apparatus further includes a pump for feeding the plating liquid upward.
Electroplating process needs the electric current, in order to promote electroplating efficiency, electroplating device still includes:
a pulse current source for applying a pulse current between the aluminum plate 3 and the pressing plate 7.
The pulse current source provides pulse current with a magnitude of 1A/cm2～15A/cm2And performing pulse electroplating for 1-2S, wherein the cathode current density can be improved, the concentration range is reduced, the crystallization of the aluminum fine grid line is finer and more compact, and the toughness of the aluminum fine grid line is improved. However, the present application is not limited to this, and direct current may be used for plating.
The storage tank 2 in the electroplating equipment is arranged inside the shell 1, the aluminum plate 3 and the screen plate carrier 5 are arranged above the storage tank 2, the screen plate 6 is arranged on the screen plate carrier 5, the screen plate carrier 5 and the screen plate 6 are provided with the second opening consistent with the thin grid line graph of the battery piece, when electroplating is carried out, electroplating solution is contacted with the battery piece through the water feeding port and the second opening of the aluminum plate 3, the pressing plate 7 is contacted with the surface opposite to the surface where the thin grid line graph of the battery piece is arranged, the aluminum plate 3 is used as an anode, the pressing plate 7 is used as a cathode, the thin grid line of aluminum is electroplated in the area where the thin grid line graph is arranged, the thin grid line of aluminum formed by electroplating is strong in plasticity, narrow in width, and the aspect ratio of the thin grid line of aluminum is increased, and because the screen plate carrier 5 is connected with the edge of the first opening of the shell 1, when the battery piece is electroplated, the interior of the shell 1 is sealed, and the electroplating solution is effectively prevented from being contacted with air, the service life of the electroplating solution is prolonged.
On the basis of the above embodiment, in an embodiment of the present application, the housing is recessed to form an accommodating groove on a side close to and parallel to the screen carrier, a side wall of the accommodating groove is disposed in an inclined manner, and the first opening is located at a bottom of the accommodating groove, as shown in fig. 3. The storage tank can cooperate the location lens to carry out accurate location to the battery piece, places the battery piece in the storage tank, can also play the effect of fixed battery piece position simultaneously.
The present application further provides a method for manufacturing a solar cell, please refer to fig. 4, the method includes:
step S101: and obtaining a cell piece prefabricated body, wherein the cell piece prefabricated body comprises a first passivation layer, an anti-reflection layer, an emitter layer, a silicon chip, a tunneling layer, a doped polycrystalline silicon layer and a second passivation layer which are sequentially stacked from top to bottom.
Taking an N-type silicon wafer as an example, the process for obtaining the cell piece preform comprises the following steps:
step S1011: diffusing the front side of the silicon wafer to form an emitter layer;
the sheet resistance of the doped region obtained during diffusion is between 60ohm/sq and 150ohm/sq, and when the silicon wafer is an N-type silicon wafer, the emitter layer is P+And an emitter layer capable of boron diffusion.
Step S1012: etching borosilicate glass, and polishing the back of the silicon wafer;
step S1013: growing a tunneling layer on the back of the silicon wafer;
the tunneling layer may be grown by a high temperature thermal oxidation method, a nitric acid oxidation method, an ozone oxidation method, or a CVD (Chemical Vapor Deposition) method, and the tunneling layer is a silicon dioxide layer with a thickness of 0.5nm to 2 nm.
Step S1014: growing a polycrystalline silicon layer on the surface of the tunneling layer;
the growth method of the polycrystalline silicon layer can be a low-pressure chemical vapor deposition method, the thickness of the polycrystalline silicon layer is between 100nm and 300nm, the absorption of light is more serious when the thickness of the polycrystalline silicon layer is larger, and phosphorus is injected into the N-type silicon wafer to contact with the N-type silicon wafer when the thickness of the polycrystalline silicon layer is too thin, so that the defects are increased, the recombination is increased, and the efficiency of the cell is influenced.
Step S1015: doping the polysilicon layer to form a doped polysilicon layer;
wherein, the doping element can be phosphorus, and the doping mode can be diffusion or ion implantation to form N+The square resistance of the emitter is between 30ohm/sq and 90 ohm/sq.
Step S1016: removing the polysilicon layer and the phosphorosilicate glass which are subjected to winding plating;
specifically, the alkali solution can be used for removing, and the cleaning temperature is 50-90 ℃.
Step S1017: forming an anti-reflection layer on the surface of the emitter layer;
the anti-reflection layer is an aluminum oxide layer which can grow in an atomic layer deposition mode, and the thickness of the aluminum oxide layer is between 2nm and 10 nm.
Step S1018: depositing a first passivation layer on the surface of the anti-reflection layer;
specifically, a silicon nitride layer is formed as a first passivation layer by introducing gases such as silane, ammonia gas and nitrogen gas by using plasma chemical vapor deposition equipment, wherein the thickness of the first passivation layer is between 60nm and 90nm, and the refractive index is between 2.0 and 2.3.
Step S1019: depositing a second passivation layer on the surface of the doped polysilicon;
wherein the thickness of the second passivation layer is between 100nm and 150 nm.
It should be noted that the back surface of the silicon wafer is also referred to as the lower surface, and the front surface is also referred to as the upper surface.
Step S102: and carrying out laser grooving on the upper surface of the cell slice prefabricated body to form a fine grid line pattern.
Wherein the width of the slot is between 20 and 50 mu m.
Step S103: and screen printing the back main grid line and the thin grid line on the lower surface of the cell slice prefabricated body.
Silver paste is printed on the surface of the second passivation layer in a screen printing mode, and a back main grid line and a thin grid line are formed.
Step S104: and placing the cell piece preform on a screen printing plate of the electroplating equipment for the solar cell electrode, wherein the fine grid line pattern corresponds to the second opening of the screen printing plate, and the pressing plate is in contact with the lower surface of the cell piece preform.
The battery piece is conveyed to a screen plate on the screen plate carrying platform along with the conveying belt, the fine grid line pattern corresponds to the second opening of the screen plate carrying platform, and the lower side of the cathode pressing plate is in press contact with the back of the battery piece.
Step S105: and the electroplating solution in the storage tank is in contact with the fine grid line pattern region through the upper water hole of the aluminum plate and the second opening, and is electrified for electroplating, so that the aluminum fine grid line is formed on the upper surface of the cell sheet prefabricated body.
The electroplating solution in the storage tank is AlCl3-EMIC ionic liquid and a trace additive, wherein the molar ratio of EMIC (1-methyl-3-ethylimidazole chloride) to anhydrous AlCl3 is 2:1, and the additive is a nonionic surfactant to improve the quality of the aluminum fine grid line, increase the compactness and enable the coating to be bright. When the battery piece enters the screen printing plate carrying platform, the ionic liquid is supplied with water, the front surface of the battery piece is contacted with the ionic liquid electroplating solution, and the current is started to complete electroplating.
Preferably, the current is pulse current with the magnitude of 1A/cm2～15A/cm2The electroplating time is 1S-2S.
Step S106: and screen printing a main grid line on the upper surface of the cell sheet prefabricated body to obtain the solar cell.
And sintering is needed after the main grid is silk-screened.
Optionally, before the obtaining of the battery sheet preform, the method further includes:
and texturing the silicon wafer to form a pyramid textured surface, so that the light trapping effect of the silicon wafer is enhanced.
When preparing solar cell in this embodiment, when preparing the thin grid line in front, adopt electroplating device to form the thin grid line of aluminium with the mode of electroplating, the thin grid line plasticity of aluminium that the electroplating formed is strong, and the width is narrow, and aspect ratio is big, can reduce the positive area of sheltering from of solar cell, increases effective photic area to promote solar cell's carrier collection efficiency.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The electroplating equipment for the solar cell electrode and the solar cell manufacturing method provided by the application are described in detail above. The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.
Claims (10)
1. An electroplating apparatus for solar cell electrodes, comprising:
a housing having a first opening;
a storage tank disposed in the housing for storing plating solution;
the aluminum plate is arranged at the opening of the storage tank and is provided with a water feeding hole;
the baffle is arranged on the upper surface of the aluminum plate and is oppositely arranged;
the screen plate carrying platform is arranged on the baffle plate and connected with the edge of the first opening of the shell;
the screen printing plate is arranged on the upper surface of the screen printing plate loading platform and used for placing a battery piece;
the pressing plate is arranged above the screen printing plate;
and the screen plate carrier and the screen plate are both provided with second openings consistent with the fine grid line patterns.
2. The plating apparatus for solar cell electrodes as claimed in claim 1, wherein said baffle plate is provided with a return port and a baffle plate matching with said return port.
3. The electroplating apparatus for solar cell electrodes according to claim 1, wherein the aluminum plate is provided with a plurality of uniformly distributed water supply holes.
4. The plating apparatus for a solar cell electrode according to claim 1, wherein the surface of the aluminum plate is a polished smooth surface.
5. The plating apparatus for solar cell electrodes according to claim 1, further comprising:
a pulsed current source for applying a pulsed current between the aluminum plate and the platen.
6. The plating apparatus for solar cell electrodes according to claim 1, further comprising:
and the mechanical arm is connected with the pressing plate.
7. The electroplating apparatus according to any one of claims 1 to 6, wherein the housing is recessed to form a receiving groove on a side thereof close to and parallel to the screen carrier, side walls of the receiving groove are inclined, and the first opening is located at a bottom of the receiving groove.
8. A method for manufacturing a solar cell is characterized by comprising the following steps:
obtaining a cell piece prefabricated body, wherein the cell piece prefabricated body comprises a first passivation layer, an anti-reflection layer, an emitter layer, a silicon chip, a tunneling layer, a doped polycrystalline silicon layer and a second passivation layer which are sequentially stacked from top to bottom;
performing laser grooving on the upper surface of the cell sheet prefabricated body to form a fine grid line pattern;
screen printing a back main grid line and a thin grid line on the lower surface of the cell slice prefabricated body;
placing the cell sheet preform on a screen of a platen electroplating apparatus for solar cell electrodes according to any one of claims 1 to 7, the fine grid line pattern corresponding to the second opening of the screen, and a platen in contact with the lower surface of the cell sheet preform;
the electroplating solution in the storage tank is in contact with the fine grid line pattern region through the upper water hole of the aluminum plate and the second opening, and is electrified for electroplating, so that an aluminum fine grid line is formed on the upper surface of the cell sheet prefabricated body;
and screen printing a main grid line on the upper surface of the cell sheet prefabricated body to obtain the solar cell.
9. The method for fabricating a solar cell according to claim 8, further comprising, before the obtaining the cell sheet preform:
and texturing the silicon wafer.
10. The method of claim 8, wherein the current is a pulse current, and the pulse current is 1A/cm2～15A/cm2。
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| CN202111013160.6A CN113584561A (en) | 2021-08-31 | 2021-08-31 | Electroplating equipment for solar cell electrode and solar cell manufacturing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114717636A (en) * | 2022-06-08 | 2022-07-08 | 苏州晶洲装备科技有限公司 | Solar cell electroplating device, electroplating system device and electroplating method |
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2021
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114717636A (en) * | 2022-06-08 | 2022-07-08 | 苏州晶洲装备科技有限公司 | Solar cell electroplating device, electroplating system device and electroplating method |
| CN114717636B (en) * | 2022-06-08 | 2022-08-19 | 苏州晶洲装备科技有限公司 | Solar cell electroplating device, electroplating system device and electroplating method |
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