CN113573486B - RF-IC carrier plate manufacturing device and manufacturing method - Google Patents
RF-IC carrier plate manufacturing device and manufacturing method Download PDFInfo
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- CN113573486B CN113573486B CN202111139524.5A CN202111139524A CN113573486B CN 113573486 B CN113573486 B CN 113573486B CN 202111139524 A CN202111139524 A CN 202111139524A CN 113573486 B CN113573486 B CN 113573486B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
Abstract
The invention discloses a device and a method for manufacturing an RF-IC (radio frequency-integrated circuit) support plate, belonging to the technical field of RF-IC support plate manufacturing processes, wherein the device for manufacturing the RF-IC support plate comprises a BT (BT) plate module, the output end of the BT plate module is provided with a copper reduction browning module, the output end of the copper reduction browning module is provided with a through laser module, the output end of the through laser module is provided with a copper deposition module, and the method for manufacturing the RF-IC support plate comprises the following main steps: subtract copper brown ization, to wearing radium-shine, heavy copper, circuit, graphic plating, the membrane of moving back, flash etching, AOI, hinder and weld, nickel palladium gold, shaping and electricity and survey, through setting up brand-new MSAP technology preparation circuit for the quality of the BT board of making is higher, satisfies customer's demand more easily, through setting up radium-shine, electroplate and hinder and weld dry film technology, has broken through current production technology, has improved the efficiency of BT board whole production greatly, makes production efficiency obtain effectual improvement.
Description
Technical Field
The invention relates to the technical field of manufacturing processes of RF-IC (radio frequency-integrated circuit) carrier plates, in particular to a manufacturing device and a manufacturing method of an RF-IC carrier plate.
Background
As a signal type IC carrier, the RF-IC carrier model 02AJ31001 has the following design due to signal transmission problem: 1. the thickness of the copper bud with a low copper bud structure is less than or equal to 2 mu m (reverse copper foil), and the design has two main reasons: the MSAP process etches the bottom copper and the bottom signal transmission problem; 2. the stability in the aspect of signal transmission is ensured by adopting a through hole or X hole filling plating technology; 3. a special plate is adopted, so that low loss of signal transmission is ensured; 4. the MSAP process is adopted for manufacturing, so that when signal transmission is ensured, the control of a circuit etching factor is better, and the signal transmission stability can be ensured; 31001 therefore, the following process is adopted: 1. manufacturing a circuit by adopting an MSAP process; 2. the material is 0.15mmBT plate (due to the fact that Mitsubishi 832NX plate takes too long time, the plate is replaced by a combined plate); 3. x laser forming and filling plating technology; 4. green resistance welding dry film technology (better resolution, smoothness and ductility of the resistance welding dry film).
However, in the actual production process of the existing RF-IC carrier board, technical breakthroughs such as MSAP process circuit manufacturing, X-hole laser and electroplating, and dry film solder mask technology are still needed, but the existing technology cannot make substantial breakthroughs in these aspects, so that the quality of the BT board after production is poor, the customer requirements cannot be met, the overall production efficiency of the BT board cannot be improved, and the signal transmission inside the BT board cannot be ensured.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a device and a method for manufacturing an RF-IC carrier plate, which have the characteristics that the manufactured BT plate has higher quality, the integral production efficiency of the BT plate is greatly improved, and the BT plate has better signal transmission.
In order to achieve the purpose, the invention provides the following technical scheme: the utility model provides a RF-IC support plate making devices, includes BT board module, its characterized in that, the output of BT board module is provided with subtracts copper brown ization module, the output that subtracts copper brown ization module is provided with to wearing radium-shine module, the output to wearing radium-shine module is provided with heavy copper module.
Preferably, the output end of the copper deposition module is provided with a circuit module, the output end of the circuit module is provided with a pattern electroplating module, and the output end of the pattern electroplating module is provided with a film stripping module.
Preferably, the output end of the film removing module is provided with a flash erosion module, the output end of the flash erosion module is provided with an AOI module, and the output end of the AOI module is provided with a solder resist module.
Preferably, the output end of the resistance welding module is provided with a nickel-palladium-gold module, and the output end of the nickel-palladium-gold module is provided with a forming module.
Preferably, the output end of the forming module is provided with an electrical measuring module, and the electrical measuring module is provided with a final inspection module.
Preferably, a method for manufacturing an RF-IC carrier includes the following steps:
the method comprises the following steps: reducing copper brown;
(1) carrying out brownification reduction treatment on the BT plate by using a copper-reduction brownification line;
(2) the main parameters of the brown reducing treatment are as follows: 1. the speed is 4.5 m/min;
(3) the main control points are as follows: 1. reducing the thickness of copper to 2-3 μm, controlling the thickness of copper buds to be less than or equal to 2 μm, and controlling the uniformity of copper bottom reduction;
step two: opposite-penetrating laser;
(3) adopting a Mitsubishi drilling machine;
(4) the main parameters are set as follows: the laser adopts a 1.4mm aperture, the energy is 10mj, and the pulse width is 12, 5 and 4;
(3) the main control points are as follows: 1. the requirement of the alignment degree is less than or equal to 5 mu m; 2. the aperture of the laser is 60-70 μm, and the aperture of the middle part is controlled to be 30-40 μm;
step three: copper deposition;
(1) carrying out copper deposition treatment on the BT plate by adopting a horizontal copper deposition line;
(2) the main parameters are set as follows: the copper deposition speed is 2m/min, and the copper deposition thickness is more than or equal to 0.8 mu m;
(3) the main control points are as follows: 1. removing glue and depositing copper; 2. removing glue from the subsequent micropores by using plasma;
(4) it should be noted that, when in use, the current thin copper deposition wire does not need to be provided with a plate, so that the redundancy of the use flow of the device is reduced to a certain extent;
step four: a line;
(3) carrying out circuit treatment on the film by adopting a film sticking line;
(4) the main parameters are set as follows: 1. the film pasting speed is 1 m/min; 2. pressure 0.6 MPA; 3. exposure energy 65mj, 4, developing speed 4 m/min;
(3) the main control points are as follows: 1. adopting ADH-308 dry film; 2. the line width and the line distance are extremely different by 10 mu m;
(4) it is noted that 1, ADH-308 is MSAP dry film; 2. the thickness is 30 mu m; note that a hot paste is used;
step five: electroplating the pattern;
(1) performing line exposure processing on the BT plate by using an exposure machine, and manufacturing by using a VCP3 thin plate line;
(2) the main parameters are set as follows: 1. current: 1.5 ASF; 2. time: 60 minutes;
(3) the main control points are as follows: 1. 220g/L of copper sulfate; 2. 3.46 percent of sulfuric acid; 3. 60.825PPM chloride ions;
(4) it should be noted that: when the electroplating solution is used, the insoluble anode and the electroplating uniformity of the MSAP process are required to be taken into consideration;
step six: removing the film;
(1) adopting a film removing line to carry out film removing work on the carrier plate;
(2) the main parameters are set as follows: 1. the film removing speed is 4 m/min;
(3) the main control points are as follows: removing and washing an MSAP dry film to prevent film clamping, wherein the surface copper is controlled within 30 mu m;
(4) it should be noted that: using an MSAP dry film as a fine circuit, and using a film removing liquid medicine to remove the film;
step seven: carrying out flash etching;
(1) the special flash etching line is adopted for flash etching, so that the flash etching liquid medicine cannot corrode the surface of copper when in use, and the signal transmission can be influenced once the flash etching liquid medicine is corroded;
(2) the main parameters are set as follows: the flash erosion speed is 4.5 m/min;
(3) the main control points are as follows: residual copper is noticed;
step eight: AOI;
mainly comprises the following steps: detecting the BT plate by using detection equipment;
step nine: resistance welding;
(1) adopting resistance welding pretreatment and sand blasting;
(2) the film sticking parameters are as follows: 1. the temperature is 75 ℃; 2. pressure 0.5 MPA; 3. pressing for 60 s; 4. vacuum for 30 s; 5. a developing speed of 4 m;
(3) the main control points are as follows: minimum resistance welding windowing is 5 mil;
(4) it should be noted that: 1. firstly, exposing once by 200mj, wherein the first exposure is mainly used for ensuring the development resolution; 2. then performing empty exposure for one time by 400mj, wherein the second empty exposure is mainly used for enhancing the photoreaction;
step ten: nickel palladium gold;
(1) carrying out nickel-palladium-gold treatment on the BT plate by using a copper reduction wire;
(2) the main parameters are set as follows: Ni-Pd-Au 4M/Pd 4M;
(3) the main control points are as follows: diffusion plating;
step eleven: molding;
carrying out final forming on the BT plate by using a numerical control forming machine;
step twelve: electrical measurement;
and (4) electrically measuring the formed BT plate by using a microneedle testing machine.
In conclusion, the invention has the following beneficial effects: the circuit is manufactured by setting a brand new MSAP process, the manufacturing method is divided into twelve steps, specifically, copper brown reduction, opposite-penetrating laser, copper deposition, circuit, pattern electroplating, film stripping, flash etching, AOI, resistance welding, nickel palladium gold, forming and electrical measurement, so that the energy consumption, raw materials and processes of the RF-IC carrier plate can be greatly saved, the simultaneous processing, operation, control and use are simpler and more convenient, the yield, quality, precision and efficiency of the RF-IC carrier plate can be greatly improved, the quality of the manufactured BT plate is higher, the requirements of customers can be met more easily, in addition, the existing production technology is broken through by setting laser, electroplating and resistance welding dry film processes, the integral production efficiency of the BT plate is greatly improved, the production efficiency is effectively improved, the manufacturing method is different from the traditional technology, the pollution to the environment is greatly reduced, and the BT board is ensured to have better signal transmission after the production of the BT board is finished.
Drawings
FIG. 1 is a schematic view of a specific flow structure of the present invention.
Detailed Description
Example (b):
the present invention is described in further detail below with reference to fig. 1.
Referring to fig. 1, the present invention provides a technical solution: an RF-IC support plate manufacturing device comprises a BT plate module and is characterized in that a copper reduction browning module is arranged at the output end of the BT plate module, a through laser module is arranged at the output end of the copper reduction browning module, a copper deposition module is arranged at the output end of the through laser module, a circuit module is arranged at the output end of the copper deposition module, a graphic electroplating module is arranged at the output end of the circuit module, a film stripping module is arranged at the output end of the graphic electroplating module, a flash erosion module is arranged at the output end of the film stripping module, an AOI module is arranged at the output end of the flash erosion module, a solder mask module is arranged at the output end of the AOI module, a nickel-palladium-gold module is arranged at the output end of the solder mask module, a forming module is arranged at the output end of the nickel-palladium-gold module, an electrical measuring module is arranged at the output end of the forming module, and a final inspection module is arranged at the electrical measuring module;
a manufacturing method of an RF-IC carrier plate is characterized by comprising the following steps:
the method comprises the following steps: reducing copper brown;
(1) carrying out brownification reduction treatment on the BT plate by using a copper-reduction brownification line;
(2) the main parameters of the brown reducing treatment are as follows: 1. the speed is 4.5 m/min;
(3) the main control points are as follows: 1. reducing the thickness of copper to 2-3 μm, controlling the thickness of copper buds to be less than or equal to 2 μm, and controlling the uniformity of copper bottom reduction;
step two: opposite-penetrating laser;
(5) adopting a Mitsubishi drilling machine;
(6) the main parameters are set as follows: the laser adopts a 1.4mm aperture, the energy is 10mj, and the pulse width is 12, 5 and 4;
(3) the main control points are as follows: 1. the requirement of the alignment degree is less than or equal to 5 mu m; 2. the aperture of the laser is 60-70 μm, and the aperture of the middle part is controlled to be 30-40 μm;
step three: copper deposition;
(1) carrying out copper deposition treatment on the BT plate by adopting a horizontal copper deposition line;
(2) the main parameters are set as follows: the copper deposition speed is 2m/min, and the copper deposition thickness is more than or equal to 0.8 mu m;
(3) the main control points are as follows: 1. removing glue and depositing copper; 2. removing glue from the subsequent micropores by using plasma;
(4) it should be noted that, when in use, the current thin copper deposition wire does not need to be provided with a plate, so that the redundancy of the use flow of the device is reduced to a certain extent;
step four: a line;
(5) carrying out circuit treatment on the film by adopting a film sticking line;
(6) the main parameters are set as follows: 1. the film pasting speed is 1 m/min; 2. pressure 0.6 MPA; 3. exposure energy 65mj, 4, developing speed 4 m/min;
(3) the main control points are as follows: 1. adopting ADH-308 dry film; 2. the line width and the line distance are extremely different by 10 mu m;
(4) it is noted that 1, ADH-308 is MSAP dry film; 2. the thickness is 30 mu m; note that a hot paste is used;
step five: electroplating the pattern;
(1) performing line exposure processing on the BT plate by using an exposure machine, and manufacturing by using a VCP3 thin plate line;
(2) the main parameters are set as follows: 1. current: 1.5 ASF; 2. time: 60 minutes;
(3) the main control points are as follows: 1. 220g/L of copper sulfate; 2. 3.46 percent of sulfuric acid; 3. 60.825PPM chloride ions;
(4) it should be noted that: when the electroplating solution is used, the insoluble anode and the electroplating uniformity of the MSAP process are required to be taken into consideration;
step six: removing the film;
(1) adopting a film removing line to carry out film removing work on the carrier plate;
(2) the main parameters are set as follows: 1. the film removing speed is 4 m/min;
(3) the main control points are as follows: removing and washing an MSAP dry film to prevent film clamping, wherein the surface copper is controlled within 30 mu m;
(4) it should be noted that: using an MSAP dry film as a fine circuit, and using a film removing liquid medicine to remove the film;
step seven: carrying out flash etching;
(1) the flash corrosion line is adopted for flash corrosion, the flash corrosion liquid medicine cannot corrode the surface of the copper when in use, and once the flash corrosion liquid medicine is corroded, the signal transmission is influenced;
(2) the main parameters are set as follows: the flash erosion speed is 4.5 m/min;
(3) the main control points are as follows: residual copper is noticed;
step eight: AOI;
mainly comprises the following steps: detecting the BT plate by using detection equipment;
step nine: resistance welding;
(1) adopting resistance welding pretreatment and sand blasting;
(2) the film sticking parameters are as follows: 1. the temperature is 75 ℃; 2. pressure 0.5 MPA; 3. pressing for 60 s; 4. vacuum for 30 s; 5. a developing speed of 4 m;
(3) the main control points are as follows: minimum resistance welding windowing is 5 mil;
(4) it should be noted that: 1. firstly, exposing once by 200mj, wherein the first exposure is mainly used for ensuring the development resolution; 2. then performing empty exposure for one time by 400mj, wherein the second empty exposure is mainly used for enhancing the photoreaction;
step ten: nickel palladium gold;
(1) carrying out nickel-palladium-gold treatment on the BT plate by using a copper reduction wire;
(2) the main parameters are set as follows: Ni-Pd-Au 4M/Pd 4M;
(3) the main control points are as follows: diffusion plating;
step eleven: molding;
carrying out final forming on the BT plate by using a numerical control forming machine;
step twelve: electrical measurement;
and (4) electrically measuring the formed BT plate by using a microneedle testing machine.
The working principle is as follows: when carrying out the production to the BT board, at first need check each instrument whether normal, after the instrument all shows normally, send into the BT board and subtract copper brown oxidation line in at first and handle the BT board and subtract copper brown oxidation, need set up its parameter during again, wherein speed is 4.5m/min, through so, can make the thickness with the copper reduce 7 mu m, then enter into the Mitsubishi rig again and carry out the drilling to wearing radium-shine to the BT board, the main parameter sets up to: the laser adopts a 1.4mm aperture, the energy is 10mj, the pulse width is 12, 5 and 4, the laser is shot on two sides, and the requirement of the alignment degree is less than or equal to 5 mu m; the aperture of the laser is 60-70 μm, the aperture of the middle is controlled to be 30-40 μm, the BT plate is ensured to be subjected to laser processing, then the BT plate after being drilled and laser enters a horizontal copper deposition line for copper deposition treatment, the copper deposition speed is set to be 2m/min, in the subsequent operation, the copper is deposited by removing glue, the micropores are pasted with a belt plate by removing glue by plasma and high-temperature glue, after the copper deposition treatment, entering a second film pasting line for carrying out line processing, adopting the second invar film pasting line for carrying out line processing, when pasting the film, film pasting speed of 1m/min, pressure of 0.6MPA, exposure energy of 65mj, developing speed of 4m/min, adoption of ADH-308 dry film and line width and line distance range difference of 10 mu m, wherein ADH-308 is MSAP dry film and thickness is 30 μm, and then enters a new Acer exposure machine to carry out electroplating treatment on the BT plate, wherein current: 40A; electroplating time is 90 minutes, copper sulfate 183.75g/L, sulfuric acid 1.46% and chloride ion 40.825PPM are used for stripping the film, when stripping the film, a positive developing line is used for stripping the film of the BT board, the stripping operation is mainly divided into two steps, one step is to solder resist a stripping tank bubble for 40min, the other step is to wash by a high-pressure water gun and then carry out flash corrosion, the flash corrosion operation is usually carried out on the BT board by a manual electroplating line, the copper reduction speed is 4.5m/min, residual copper needs to be noticed when working, then the detection operation is carried out on the BT board by adopting the ao Bao second generation to solder resist the BT board, and the solder resist stripping operation is carried out on the BT board by adopting a solder resist stripping cylinder, when the BT board is worked by adopting the solder resist stripping cylinder, the temperature is 75 ℃, the pressure is 0.5MPA, the pressing is 60s, the vacuum is 30s and the developing speed is 4m, most importantly, the minimum solder resist opening window 5 is needed, and attention is that: firstly, exposing once by 200mj, wherein the first exposure is mainly used for ensuring the development resolution; secondly, performing air exposure once by 400mj, wherein the second air exposure is mainly used for enhancing photoreaction, performing nickel-palladium-gold treatment on the BT plate by using a copper reduction wire, ensuring 4 steps of nickel-palladium-gold/4 steps of palladium, performing final molding on the BT plate by using a numerical control molding machine, performing electrical measurement on the molded BT plate by using a resistance welding parallel exposure machine, and finally performing final inspection to obtain the qualified BT plate which can be used after being manufactured.
The present embodiment is only for explaining the present invention, and it is not limited to the present invention, and those skilled in the art can make modifications of the present embodiment without inventive contribution as needed after reading the present specification, but all of them are protected by patent law within the scope of the claims of the present invention.
Claims (1)
1. A manufacturing method of RF-IC carrier is characterized in that,
the manufacturing device of the RF-IC carrier plate comprises a BT plate module;
the output end of the BT plate module is provided with a copper reduction browning module, the output end of the copper reduction browning module is provided with a through laser module, and the output end of the through laser module is provided with a copper deposition module;
the output end of the copper deposition module is provided with a circuit module, the output end of the circuit module is provided with a pattern electroplating module, and the output end of the pattern electroplating module is provided with a film stripping module;
the output end of the film stripping module is provided with a flash erosion module, the output end of the flash erosion module is provided with an AOI module, and the output end of the AOI module is provided with a solder resist module;
the output end of the resistance welding module is provided with a nickel-palladium-gold module, and the output end of the nickel-palladium-gold module is provided with a forming module;
an electrical measurement module is arranged at the output end of the forming module, and a final inspection module is arranged on the electrical measurement module;
the manufacturing method of the RF-IC carrier plate comprises the following steps:
the method comprises the following steps: reducing copper brown;
(1) carrying out brownification reduction treatment on the BT plate by using a copper-reduction brownification line;
(2) the main parameters of the brown reducing treatment are as follows: 1. the speed is 4.5 m/min;
(3) the main control points are as follows: 1. reducing the thickness of copper to 2-3 μm, controlling the thickness of copper buds to be less than or equal to 2 μm, and controlling the uniformity of copper bottom reduction;
step two: opposite-penetrating laser;
(1) adopting a Mitsubishi drilling machine;
(2) the main parameters are set as follows: the laser adopts a 1.4mm aperture, the energy is 10mj, and the pulse width is 12, 5 and 4;
(3) the main control points are as follows: 1. the requirement of the alignment degree is less than or equal to 5 mu m; 2. the aperture of the laser is 60-70 μm, and the aperture of the middle part is controlled to be 30-40 μm;
step three: copper deposition;
(1) carrying out copper deposition treatment on the BT plate by adopting a horizontal copper deposition line;
(2) the main parameters are set as follows: the copper deposition speed is 2m/min, and the copper deposition thickness is more than or equal to 0.8 mu m;
(3) the main control points are as follows: 1. removing glue and depositing copper; 2. removing glue from the subsequent micropores by using plasma;
step four: a line;
(1) carrying out circuit treatment on the film by adopting a film sticking line;
(2) the main parameters are set as follows: 1. the film pasting speed is 1 m/min; 2. pressure 0.6 MPA; 3. exposure energy 65mj, 4, developing speed 4 m/min;
(3) the main control points are as follows: 1. adopting ADH-308 dry film; 2. the line width and the line distance are extremely different by 10 mu m;
(4) it is noted that 1, ADH-308 is MSAP dry film; 2. the thickness is 30 mu m; note that a hot paste is used;
step five: electroplating the pattern;
(1) performing line exposure processing on the BT plate by using an exposure machine, and manufacturing by using a VCP3 thin plate line;
(2) the main parameters are set as follows: 1. current: 1.5 ASF; 2. time: 60 minutes;
(3) the main control points are as follows: 1. 220g/L of copper sulfate; 2. 3.46 percent of sulfuric acid; 3. 60.825PPM chloride ions;
step six: removing the film;
(1) adopting a film removing line to carry out film removing work on the carrier plate;
(2) the main parameters are set as follows: 1. the film removing speed is 4 m/min;
(3) the main control points are as follows: removing and washing an MSAP dry film to prevent film clamping, wherein the surface copper is controlled within 30 mu m;
(4) it should be noted that: using an MSAP dry film as a fine circuit, and using a film removing liquid medicine to remove the film;
step seven: carrying out flash etching;
(1) the flash corrosion line is adopted for flash corrosion, the flash corrosion liquid medicine cannot corrode the surface of the copper when in use, and once the flash corrosion liquid medicine is corroded, the signal transmission is influenced;
(2) the main parameters are set as follows: the flash erosion speed is 4.5 m/min;
(3) the main control points are as follows: residual copper is noticed;
step eight: AOI;
mainly comprises the following steps: detecting the BT plate by using detection equipment;
step nine: resistance welding;
(1) adopting resistance welding pretreatment and sand blasting;
(2) the film sticking parameters are as follows: 1. the temperature is 75 ℃; 2. pressure 0.5 MPA; 3. pressing for 60 s; 4. vacuum for 30 s; 5. a developing speed of 4 m;
(3) the main control points are as follows: minimum resistance welding windowing is 5 mil;
(4) it should be noted that: 1. firstly, exposing once by 200mj, wherein the first exposure is mainly used for ensuring the development resolution; 2. then performing empty exposure for one time by 400mj, wherein the second empty exposure is mainly used for enhancing the photoreaction;
step ten: nickel palladium gold;
(1) carrying out nickel-palladium-gold treatment on the BT plate by using a copper reduction wire;
(2) the main parameters are set as follows: Ni-Pd-Au 4M/Pd 4M;
(3) the main control points are as follows: diffusion plating;
step eleven: molding;
carrying out final forming on the BT plate by using a numerical control forming machine;
step twelve: electrical measurement;
and (4) electrically measuring the formed BT plate by using a microneedle testing machine.
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| CN107809855A (en) * | 2017-10-18 | 2018-03-16 | 通元科技(惠州)有限公司 | The preparation method of one species support plate |
| CN110831350A (en) * | 2019-11-14 | 2020-02-21 | 四会富仕电子科技股份有限公司 | Method for manufacturing bottomless copper circuit board |
| WO2020189692A1 (en) * | 2019-03-18 | 2020-09-24 | 味の素株式会社 | Circuit board manufacturing method |
| CN111741614A (en) * | 2020-06-05 | 2020-10-02 | 广州美维电子有限公司 | Fine circuit PCB processing method |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107124830A (en) * | 2017-07-07 | 2017-09-01 | 台山市精诚达电路有限公司 | A kind of preparation method of FPC soft boards circuit |
| CN107809855A (en) * | 2017-10-18 | 2018-03-16 | 通元科技(惠州)有限公司 | The preparation method of one species support plate |
| WO2020189692A1 (en) * | 2019-03-18 | 2020-09-24 | 味の素株式会社 | Circuit board manufacturing method |
| CN110831350A (en) * | 2019-11-14 | 2020-02-21 | 四会富仕电子科技股份有限公司 | Method for manufacturing bottomless copper circuit board |
| CN111741614A (en) * | 2020-06-05 | 2020-10-02 | 广州美维电子有限公司 | Fine circuit PCB processing method |
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