CN113572462A - Power semiconductor module - Google Patents
Power semiconductor module Download PDFInfo
- Publication number
- CN113572462A CN113572462A CN202111116456.0A CN202111116456A CN113572462A CN 113572462 A CN113572462 A CN 113572462A CN 202111116456 A CN202111116456 A CN 202111116456A CN 113572462 A CN113572462 A CN 113572462A
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- Prior art keywords
- power semiconductor
- module
- power
- detection element
- current
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/06—Circuits specially adapted for rendering non-conductive gas discharge tubes or equivalent semiconductor devices, e.g. thyratrons, thyristors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Conversion In General (AREA)
Abstract
An embodiment of the present invention provides a power semiconductor module, including: a power semiconductor for operating in a linear region under the control of an external controller; the current detection element is connected with the power semiconductor and is used for detecting the actual working current of the power semiconductor and feeding the actual working current back to the external controller; the power semiconductor and the current detection element are integrally packaged into an independent submodule, and the independent submodule is provided with a control port connected with a control end of the power semiconductor, a current output port connected with the current detection element, and a first power supply port and a second power supply port which are connected with an input end and an output end of the power semiconductor and are respectively used for connecting an anode and a cathode of an external power supply. The independent sub-module of this embodiment is inside each device's parameter concentration, the operating mode of device is close, the reliability is high, and installation and maintenance are convenient, and direct integral installation independent sub-module can.
Description
Technical Field
The embodiment of the invention relates to the technical field of power semiconductor application, in particular to a power semiconductor module.
Background
In order to effectively detect the operating state of the power semiconductor and stably control the operating state of the power semiconductor, a corresponding current/voltage detecting element is generally disposed in an existing power semiconductor circuit and connected to the power semiconductor, and a corresponding operating parameter of the power semiconductor is detected and outputted through the detecting element.
However, since the power semiconductor and the detection element in the existing circuit are usually installed dispersedly, the number of parts is relatively large, the number of connection points between the parts is large, and the failure of any one connection point may cause serious loss, the existing circuit is not suitable for some application scenarios with high reliability requirements (for example, the application circuit of an electric vehicle); in addition, the working parameters of circuits of the power semiconductor and the detection element which are dispersedly installed are relatively discrete, and the respective corresponding working environments (such as heat dissipation environments) are different, so that the parameters and working conditions of each device are gradually deviated in the use process, and the aging failure of the device is accelerated; finally, when the power semiconductor is applied, parts need to be installed one by one, the installation efficiency is low, and when a certain part in a circuit is damaged, the maintenance is very troublesome, and the quick maintenance is not facilitated.
Disclosure of Invention
The technical problem to be solved by the embodiments of the present invention is to provide a power semiconductor module, which has centralized parameters of each device inside the module, close working conditions of the devices, high reliability, and rapid installation and maintenance.
In order to solve the above technical problem, an embodiment of the present invention provides the following technical solutions: a power semiconductor module comprising:
a power semiconductor for operating in a linear region under the control of an external controller; and
the current detection element is connected with the power semiconductor and used for detecting the actual working current of the power semiconductor and feeding the actual working current back to the external controller;
the power semiconductor and the current detection element are integrally packaged into an independent sub-module, a control port connected with a control end of the power semiconductor, a current output port connected with the current detection element, and a first power port and a second power port which are connected with an input end and an output end of the power semiconductor and are respectively used for connecting an anode and a cathode of an external power supply are arranged on the independent sub-module, and the control port and the current output port are both connected with an external controller.
Further, the power semiconductor module further includes:
a temperature detection element, disposed adjacent to the power semiconductor, for detecting an actual operating temperature of the power semiconductor and feeding back to the external controller; the temperature detection element is also integrated and packaged in the independent submodule, the independent submodule is also provided with a temperature output port connected with the temperature detection element, and the temperature output port is also connected with the external controller.
Furthermore, the independent sub-modules are also provided with voltage output ports respectively connected with the input ends of the power semiconductors, and the voltage output ports are also connected with the external controller.
Furthermore, the power semiconductor module also comprises a voltage limiting protection element connected with the current detection element in parallel, and the voltage limiting protection element is also integrated and packaged in the independent sub-module.
Further, the power semiconductor module comprises a plurality of power semiconductors which are integrally packaged in the independent sub-module, and the plurality of power semiconductors are sequentially connected in series to form a series connection body, wherein the output end of the power semiconductor on the upstream side of the series connection body is connected with the input end of the power semiconductor on the downstream side of the series connection body, the input end of the first power semiconductor on the upstream side of the series connection body is used as the input end of the series connection body, the output end of the last power semiconductor on the downstream side of the series connection body is used as the output end of the series connection body, and the voltage output port is connected with the input end of the series connection body.
Further, the power semiconductor is an IGBT, an MOS tube or a triode.
After the technical scheme is adopted, the embodiment of the invention at least has the following beneficial effects: according to the embodiment of the invention, the power semiconductor and the current detection element are integrated and packaged into an independent sub-module, and the control port, the current output port, the first power port and the second power port are correspondingly arranged on the independent sub-module, so that the independent sub-module is conveniently connected with various external circuits, the parameters of all devices in the independent sub-module are concentrated, the working conditions of the devices are close, the reliability is high, the installation and maintenance are convenient, and the independent sub-module can be directly and integrally installed.
Drawings
Fig. 1 is a schematic block diagram of an alternative embodiment of a power semiconductor module according to the present invention.
Fig. 2 is a detailed circuit diagram of individual sub-modules of an alternative embodiment of the power semiconductor module of the present invention.
Fig. 3 is a detailed circuit diagram of an independent sub-module of a power semiconductor module according to yet another alternative embodiment of the present invention.
Fig. 4 is a detailed circuit diagram of an independent sub-module of a power semiconductor module according to yet another alternative embodiment of the present invention.
Fig. 5 is a detailed circuit diagram of an independent sub-module of another alternative embodiment of the power semiconductor module of the present invention.
Fig. 6 is a schematic block diagram of the structure of an alternative embodiment of the power semiconductor module of the present invention.
Fig. 7 is a detailed circuit diagram of individual sub-modules of an alternative embodiment of the power semiconductor module of the present invention.
Fig. 8 is a detailed circuit diagram of an independent sub-module of yet another alternative embodiment of the power semiconductor module of the present invention.
Fig. 9 is a detailed circuit diagram of an independent sub-module of a power semiconductor module according to yet another alternative embodiment of the present invention.
Fig. 10 is a detailed circuit diagram of individual sub-modules of another alternative embodiment of the power semiconductor module of the present invention.
Detailed Description
The present application will now be described in further detail with reference to the accompanying drawings and specific examples. It should be understood that the following illustrative embodiments and description are only intended to explain the present invention, and are not intended to limit the present invention, and features of the embodiments and examples in the present application may be combined with each other without conflict.
As shown in fig. 1 to 10, an alternative embodiment of the present invention provides a power semiconductor module 1 including:
a power semiconductor 10 for operating in a linear region under the control of the external controller 3; and
a current detection element 12 connected to the power semiconductor 10, for detecting an actual working current of the power semiconductor 10 and feeding back the actual working current to the external controller 3;
the power semiconductor 10 and the current detection element 12 are integrally packaged into an independent sub-module 14, the independent sub-module 14 is provided with a control port 141 connected with the control terminal 101 of the power semiconductor 10, a current output port 143 connected with the current detection element 12, and a first power port 145 and a second power port 146 connected with the input terminal 103 and the output terminal 105 of the power semiconductor 10 and respectively connected with the anode 50 and the cathode 52 of the external power supply 5, and the control port 141 and the current output port 143 are both connected with the external controller 3.
In the embodiment of the invention, the power semiconductor 10 and the current detection element 12 are integrated and packaged into an independent sub-module 14, and the control port 141, the current output port 143, the first power port 145 and the second power port 146 are correspondingly arranged on the independent sub-module 14, so that the independent sub-module 14 can be conveniently connected with various external circuits, parameters of various devices in the independent sub-module 14 are concentrated, working conditions of the devices are close, the reliability is high, the installation and maintenance are convenient, and the independent sub-module 14 can be directly and integrally installed.
In practical implementation, the current detection element 12 can be implemented in many ways, for example: a current sampling resistor, a current detection chip, a Hall element and the like; in addition, the current detection element 12 may be connected in series between the input terminal 103 of the power semiconductor 10 and the positive electrode 50 of the external power source 5 (as shown in fig. 1) or between the output terminal 105 of the power semiconductor 10 and the negative electrode 52 of the external power source 5 (as shown in fig. 6) to correspondingly implement high-side or low-side detection, so that, on the premise of ensuring that the current detection element 12 is connected with the power semiconductor 10, the first power port 145 and the second power port 146 may be directly connected with the input terminal 103 and the output terminal 105 of the power semiconductor 10 or indirectly connected with the current detection element 12; finally, the power semiconductor 10 of the power semiconductor module 1 of the present embodiment can operate in the linear region to generate heat under the control of the external controller 3, and therefore, the power semiconductor module 1 of the embodiment of the present invention is suitable for a heat supply device that supplies heat to the outside under the control of the external controller 3.
In an alternative embodiment of the present invention, as shown in fig. 1 and 6, the power semiconductor module 1 further includes:
a temperature detection element 16, provided adjacent to the power semiconductor 10, for detecting an actual operating temperature of the power semiconductor 10 and feeding back to the external controller 3; the temperature detection element 16 is also integrally packaged in the independent sub-module 14, the independent sub-module 14 is further provided with a temperature output port 147 connected with the temperature detection element 16, and the temperature output port 147 is also connected with the external controller 3. In this embodiment, the temperature detection element 16 is further arranged to detect the actual operating temperature of the power semiconductor 10 and feed back the actual operating temperature to the external controller 3, so that the actual operating temperature of the power semiconductor 10 can be effectively output, and a reference for more parameters is provided for the operating state of the power semiconductor 10. In specific implementation, the temperature detecting element 16 may be implemented by a temperature sensor, a thermistor, or the like.
In an alternative embodiment of the present invention, as shown in fig. 1 and fig. 6, the independent sub-modules 14 are further provided with voltage output ports 148 respectively connected to the input terminals of the power semiconductors 10, and the voltage output ports 148 are also connected to the external controller 3. In this embodiment, a voltage output port 148 connected to the input terminal of the power semiconductor 10 is further provided, so that the actual operating voltage of the power semiconductor 10 can be effectively output, the operating state of the power semiconductor 10 is referred to, and the actual operating power of the power semiconductor 10 can be calculated by combining with the actual operating current.
In an alternative embodiment of the present invention, as shown in fig. 2-4 and fig. 7-9, the power semiconductor module 1 further includes a voltage limiting protection element 18 connected in parallel with the current detection element 12, and the voltage limiting protection element 18 is also integrally packaged in the independent sub-module 14. In this embodiment, according to the control principle of the power semiconductor 10, in the control process of the power semiconductor 10, when the control circuit adjusts the operating current of the power semiconductor 10, the current in a short time is increased in the circuit, and when the current is too large, the power of the current detection element 12 is increased sharply, so that the current detection element 12 is overheated and damaged, therefore, in this embodiment, by adding the voltage-limiting protection element 18, the voltage at two ends of the current detection element 12 is limited within a certain specific voltage threshold, so as to effectively protect the current detection element 12. In a specific implementation, the voltage limiting protection element 18 may be implemented by a rectifier diode, a voltage regulator diode, or a voltage regulator chip.
In an alternative embodiment of the present invention, as shown in fig. 5 and 10, the power semiconductor module 1 includes a plurality of power semiconductors 10 each integrally packaged in the independent sub-module 14, and the plurality of power semiconductors 10 are connected in series in sequence to form a series connection 10a, wherein an output terminal of the power semiconductor 10 on an upstream side of the series connection 10a is connected to an input terminal of the power semiconductor 10 on a downstream side of the series connection 10a, an input terminal of a first power semiconductor 10 on the upstream side of the series connection 10a is used as an input terminal of the series connection 10a, an output terminal of a last power semiconductor 10 on the downstream side of the series connection 10a is used as an output terminal of the series connection 10a, and the voltage output port 148 is connected to the input terminal of the series connection 10 a. In the present embodiment, for convenience of description, the related technical terms are defined as follows: according to the flowing direction of the current, the current flows first on the upstream side and the current flows later on the downstream side. It is understood that the upstream side and the downstream side are both opposed, and one of the power semiconductors 10 in the series body 10a is the upstream side with respect to the power semiconductor 10 on the downstream side thereof, but the power semiconductor 10 on the upstream side is the downstream side with respect to the power semiconductor 10 on the upstream side thereof; when the power semiconductor module 1 has a plurality of power semiconductors 10, the connection of the power semiconductors 10 is realized in the above manner, and the current detection element 12 is ensured to effectively detect the current, so that the circuit structure is simple.
In an alternative embodiment of the present invention, as shown in fig. 2-4 and fig. 7-9, the power semiconductor 10 is an IGBT, a MOS transistor or a triode. In specific implementation, the power semiconductor 10 may be an IGBT (as shown in fig. 2 and 7), a MOS transistor (as shown in fig. 3 and 8), or a triode (as shown in fig. 4 and 9). When the circuit is specifically designed, the structural form of the power semiconductor 10 can be flexibly selected according to different design requirements so as to reduce the production cost.
In specific implementation, it is understood that the IGBT may also be a single insulated gate bipolar transistor chip, or a modular semiconductor product formed by bridging and packaging an IGBT (insulated gate bipolar transistor chip) and an FWD (freewheeling diode chip) through a specific circuit. In addition, when the power semiconductor 10 is an IGBT (taking an N-channel enhancement type as an example), the input terminal, the output terminal, and the control terminal are a collector, an emitter, and a gate of the IGBT, respectively; when the power semiconductor 10 is a triode (taking an NPN-type triode as an example), the input terminal, the output terminal, and the control terminal are a collector, an emitter, and a base of the triode, respectively; when the power semiconductor 10 is an MOS transistor (for example, an NMOS transistor), the input terminal, the output terminal, and the control terminal are a drain, a source, and a gate of the MOS transistor, respectively.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (6)
1. A power semiconductor module, characterized in that the power semiconductor module comprises:
a power semiconductor for operating in a linear region under the control of an external controller; and
the current detection element is connected with the power semiconductor and used for detecting the actual working current of the power semiconductor and feeding the actual working current back to the external controller;
the power semiconductor and the current detection element are integrally packaged into an independent sub-module, a control port connected with a control end of the power semiconductor, a current output port connected with the current detection element, and a first power port and a second power port which are connected with an input end and an output end of the power semiconductor and are respectively used for connecting an anode and a cathode of an external power supply are arranged on the independent sub-module, and the control port and the current output port are both connected with an external controller.
2. The power semiconductor module of claim 1, further comprising:
a temperature detection element, disposed adjacent to the power semiconductor, for detecting an actual operating temperature of the power semiconductor and feeding back to the external controller; the temperature detection element is also integrated and packaged in the independent submodule, the independent submodule is also provided with a temperature output port connected with the temperature detection element, and the temperature output port is also connected with the external controller.
3. The power semiconductor module of claim 1, wherein said independent sub-modules are further provided with a voltage output port connected to an input of said power semiconductor, said voltage output port also being connected to said external controller.
4. The power semiconductor module of claim 1, further comprising a voltage limiting protection element in parallel with the current sensing element, the voltage limiting protection element also being integrally packaged within the independent sub-module.
5. The power semiconductor module according to claim 3, wherein the power semiconductor module includes a plurality of power semiconductors each integrally packaged in the independent sub-module, the plurality of power semiconductors being connected in series in sequence to constitute a series body, wherein an output terminal of the power semiconductor on an upstream side of the series body is connected to an input terminal of the power semiconductor on a downstream side of the series body, an input terminal of a first power semiconductor on the upstream side of the series body serves as an input terminal of the series body, an output terminal of a last power semiconductor on the downstream side of the series body serves as an output terminal of the series body, and the voltage output port is connected to the input terminal of the series body.
6. A power semiconductor module according to any one of claims 1-5, characterized in that the power semiconductor is an IGBT, MOS transistor or triode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111116456.0A CN113572462A (en) | 2021-09-23 | 2021-09-23 | Power semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111116456.0A CN113572462A (en) | 2021-09-23 | 2021-09-23 | Power semiconductor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113572462A true CN113572462A (en) | 2021-10-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111116456.0A Pending CN113572462A (en) | 2021-09-23 | 2021-09-23 | Power semiconductor module |
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| Country | Link |
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| CN (1) | CN113572462A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09260592A (en) * | 1996-03-19 | 1997-10-03 | Fuji Electric Co Ltd | Integrated circuit |
| CN107466424A (en) * | 2016-04-06 | 2017-12-12 | 新电元工业株式会社 | Power model |
| CN111952295A (en) * | 2019-05-14 | 2020-11-17 | 英飞凌科技奥地利有限公司 | Power semiconductor device, power module assembly and method for measuring current |
-
2021
- 2021-09-23 CN CN202111116456.0A patent/CN113572462A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09260592A (en) * | 1996-03-19 | 1997-10-03 | Fuji Electric Co Ltd | Integrated circuit |
| CN107466424A (en) * | 2016-04-06 | 2017-12-12 | 新电元工业株式会社 | Power model |
| CN111952295A (en) * | 2019-05-14 | 2020-11-17 | 英飞凌科技奥地利有限公司 | Power semiconductor device, power module assembly and method for measuring current |
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Application publication date: 20211029 |