CN218386794U - Protection circuit of SiC MOSFET - Google Patents
Protection circuit of SiC MOSFET Download PDFInfo
- Publication number
- CN218386794U CN218386794U CN202221194725.5U CN202221194725U CN218386794U CN 218386794 U CN218386794 U CN 218386794U CN 202221194725 U CN202221194725 U CN 202221194725U CN 218386794 U CN218386794 U CN 218386794U
- Authority
- CN
- China
- Prior art keywords
- electrically connected
- sic mosfet
- resistor
- output side
- control module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The technical scheme of this application provides a protection circuit of SiC MOSFET, includes: the output side logic control module is used for receiving and outputting the driving pulse signal of the SiC MOSFET and is also used for outputting a control signal synchronous with the driving pulse signal; the output stage power amplification circuit is electrically connected with the output side logic control module, is configured to amplify the driving pulse signal and outputs the driving pulse signal to the SiC MOSFET; and the short circuit detection module is electrically connected with the output side logic control module and the drain electrode of the SiC MOSFET, is configured to receive the control signal and obtain a reference voltage signal, simultaneously obtains a drain-source voltage signal of the SiC MOSFET, and outputs a detection result signal to the output side logic control module based on the drain-source voltage signal and the reference voltage signal. The protection circuit of the technical scheme of the application can carry out dynamic short circuit monitoring on the circuit where the SiC MOSFET is located.
Description
Technical Field
The application relates to the technical field of power electronics, in particular to a protection circuit of a SiC MOSFET.
Background
Power electronic power converters play an important role in production and life as an important device for the utilization of electric energy. The core of the power electronic power converter is a power semiconductor device, which largely determines the performance of the power electronic power converter. At present, most power semiconductor devices are made of Si semiconductor materials, and the characteristics thereof are close to the theoretical limit, which becomes the bottleneck of further development of power electronic power converters. Compared with Si power devices, siC power devices have more excellent characteristics: the SiC power device has higher switching speed, can work at higher junction temperature, and can simultaneously realize high frequency, high voltage and large current. These characteristics can significantly improve the performance of the semiconductor power converter, obtain higher electric energy conversion efficiency, realize higher power density, reduce system cost, and the like.
In the power electronic converter, a control signal sent by a microcontroller belongs to a weak point signal, a power semiconductor device cannot be directly driven, and a driving circuit needs to be arranged between the microcontroller and the power semiconductor device. The driving circuit is mainly used for realizing on-off control of the power semiconductor device after shaping and power amplification of a weak current control signal sent by the microcontroller; when a fault occurs in the power semiconductor device and the circuit in which the power semiconductor device is located, the fault information is also transmitted back to the microcontroller by the driving circuit. Therefore, the driving circuit is an interactive bridge between the weak current control signal and the strong current power circuit, and the reliability of the driving circuit directly influences the overall reliability of the power electronic converter.
The SiC MOSFET is mainly applied to high-voltage occasions, has high requirement on reliability, and needs short-circuit detection and protection if a circuit in which the SiC MOSFET is arranged is short-circuited to cause serious consequences. At present, a plurality of problems exist when short-circuit protection is carried out by adopting desaturation detection, for example, if the blanking time is short, false operation is easy; if the blanking time is too long, it is difficult to safely shut down within a specified maximum short circuit time. The blanking time is determined by the blanking capacitance value, but the selection of the blanking capacitance value is difficult; after the blanking capacitance value is determined, the blanking capacitance value is also influenced by temperature, and meanwhile, a high-voltage diode in the desaturation detection circuit belongs to a strong interference source.
SUMMERY OF THE UTILITY MODEL
The technical problem that this application will be solved provides a protection circuit of SiC MOSFET, can carry out the short circuit monitoring to the circuit that SiC MOSFET belongs to, overcomes the current problem that moves back saturation detection existence.
In order to solve the above technical problem, the present application provides a protection circuit of a SiC MOSFET, including: the output side logic control module is used for receiving and outputting the driving pulse signal of the SiC MOSFET and is also used for outputting a control signal synchronous with the driving pulse signal; the output stage power amplification circuit is electrically connected with the output side logic control module, is configured to amplify the driving pulse signal and outputs the driving pulse signal to the SiC MOSFET; and the short circuit detection module is electrically connected with the output side logic control module and the drain electrode of the SiC MOSFET, is configured to receive the control signal and obtain a reference voltage signal, simultaneously obtains a drain-source voltage signal of the SiC MOSFET, and outputs a detection result signal to the output side logic control module based on the drain-source voltage signal and the reference voltage signal.
In some embodiments of the present application, the short detection module is configured to compare the drain-source voltage signal with the reference voltage signal, when the drain-source voltage signal is greater than the reference voltage signal, the operational amplifier signal is inverted, and the short detection module outputs a short signal to the output side logic control module.
In some embodiments of the present application, the short detection module is further configured to compare the drain-source voltage signal with the reference voltage signal, and when the drain-source voltage signal is less than or equal to the reference voltage signal, the operational amplifier signal does not flip.
In some embodiments of the present application, the short detection module comprises: the comparator comprises a first input end, a second input end and an output end, wherein the output end is electrically connected with the output side logic control module; the drain-source voltage signal source circuit is electrically connected with the first input end; and the reference voltage signal source circuit is electrically connected with the second input end.
In some embodiments of the present application, the drain-source voltage signal source circuit includes: a first end of the fifth resistor is electrically connected with the drain electrode of the SiC MOSFET, and two ends of the fifth resistor are also electrically connected with a second capacitor; a first end of the sixth resistor is electrically connected with a second end of the fifth resistor, and two ends of the sixth resistor are also electrically connected with a third capacitor; a first end of the seventh resistor is electrically connected with a second end of the sixth resistor, a second end of the seventh resistor is electrically connected with the first input end, and two ends of the seventh resistor are also electrically connected with a fourth capacitor; the first end of the eighth resistor is electrically connected with the first input end, the second end of the eighth resistor is connected with the output side ground, and the two ends of the eighth resistor are also electrically connected with a fifth capacitor.
In some embodiments of the present application, the reference voltage signal source circuit includes: a gate of the third MOS transistor is electrically connected to the output side logic control module, a source of the third MOS transistor is connected to the output side ground, and the third MOS transistor is controlled by the control signal; the anode of the first voltage stabilizing diode is electrically connected with the drain electrode of the third MOS tube; a ninth resistor, a first end of which is electrically connected to the cathode of the first zener diode, and a second end of which is electrically connected to the second input terminal; a first end of the sixth capacitor is electrically connected with the second input end, and a second end of the sixth capacitor is connected with the output side ground; and a tenth resistor, wherein a first end of the tenth resistor is electrically connected with the direct-current positive voltage, and a second end of the tenth resistor is electrically connected with the second input end.
In some embodiments of the present application, the protection circuit further comprises: and the auxiliary detection module is positioned between the Kelvin pin and the source electrode pin of the SiC MOSFET and used for detecting the current change rate of the SiC MOSFET.
In some embodiments of the present application, the auxiliary detection module comprises: the anode of the second diode is connected with the output side ground; an eleventh resistor, a first end of which is electrically connected to the cathode of the second diode, and a second end of which is electrically connected to the source of the SiC MOSFET; a twelfth resistor, a first end of which is electrically connected to the cathode of the second diode; a first end of the seventh capacitor is electrically connected with a second end of the twelfth resistor, and a second end of the seventh capacitor is electrically connected with the source electrode of the SiC MOSFET; and the primary side of the transformer is electrically connected with two ends of the seventh capacitor, one end of the secondary side of the transformer is electrically connected with the output side logic control module, and the other end of the secondary side of the transformer is connected with the output side ground.
In some embodiments of the present application, the output stage power amplifying circuit includes a push-pull driving circuit formed by a PMOS transistor and an NMOS transistor, or includes a push-pull driving circuit formed by NPN and PNP transistors.
In some embodiments of the present application, the output stage power amplification circuit comprises: the input end of the amplifier is electrically connected with the output side logic control module, and the amplifier is also electrically connected with a direct current positive voltage, a direct current negative voltage and an output side ground; the source electrode of the PMOS tube is electrically connected with the direct-current voltage, the grid electrode of the PMOS tube is electrically connected with the output end of the amplifier, and the drain electrode of the PMOS tube is electrically connected with the grid electrode of the SiC MOSFET through a third resistor; and the source electrode of the NMOS tube is electrically connected with the direct current negative voltage, the grid electrode of the NMOS tube is electrically connected with the output end of the amplifier, and the drain electrode of the NMOS tube is electrically connected with the grid electrode of the SiC MOSFET through a first resistor.
In some embodiments of the present application, the protection circuit further includes an input side logic control module, configured to receive a driving pulse signal of the SiC MOSFET and output the driving pulse signal to the output side logic control module, and the output side logic control module further feeds back a detection result signal to the input side logic control module.
In some embodiments of the present application, a second codec module is electrically connected between the input side logic control module and the output side logic control module, and the second codec module includes: the feedback coding module is electrically connected with the output side logic control module; and the feedback decoding module is in signal isolation with the feedback coding module and is electrically connected with the input side logic control module.
According to the technical scheme, the short circuit detection module is arranged in the protection circuit, and the control signal of the short circuit detection module is synchronous with the driving pulse signal, so that the reference voltage signal has an adjustable characteristic, dynamic detection of the circuit is realized, and the problems that parameters of the existing short circuit detection circuit are difficult to set and other devices are interfered can be solved.
Drawings
The following drawings describe in detail exemplary embodiments disclosed in the present application. Wherein like reference numerals represent similar structures throughout the several views of the drawings. Those of ordinary skill in the art will understand that the present embodiments are non-limiting, exemplary embodiments and that the accompanying drawings are for illustrative and descriptive purposes only and are not intended to limit the scope of the present application, as other embodiments may equally fulfill the inventive intent of the present application. It should be understood that the drawings are not to scale. Wherein:
fig. 1 is a schematic structural diagram of a protection circuit of a SiC MOSFET according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a protection circuit of another SiC MOSFET according to an embodiment of the present application;
FIG. 3 is a change curve of a source-drain voltage signal and a reference voltage signal when a SiC MOSFET is switched from off to on and a circuit in which the SiC MOSFET is in short circuit;
fig. 4 is a schematic structural diagram of a protection circuit of a further SiC MOSFET according to an embodiment of the present application;
fig. 5 is a schematic structural diagram of an output stage power amplifying circuit according to an embodiment of the present application;
fig. 6 is a schematic structural diagram of a protection circuit of a further SiC MOSFET according to an embodiment of the present application.
Detailed Description
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings used in the description of the embodiments will be briefly described below. It is obvious that the drawings in the following description are only examples or embodiments of the application, and that for a person skilled in the art the application can also be applied to other similar contexts on the basis of these drawings without inventive effort. Unless otherwise apparent from the context, or stated otherwise, like reference numbers in the figures refer to the same structure or operation.
It should be understood that "module," "circuit," as used herein, is a method for distinguishing between different components, elements, parts, portions or assemblies of different levels. However, other words may be substituted by other expressions if they accomplish the same purpose.
The terminology used in the present application is for the purpose of describing particular example embodiments only and is not intended to be limiting. For example, as used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," and/or "including," when used in this specification, mean that the associated integers, steps, operations, elements, and/or components are present, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. When different components are described in this specification as being associated, they may be in a direct relationship or an indirect relationship. For example, "a and B are connected" may be that a and B are directly connected, or that a and B are indirectly connected through other components.
These and other features disclosed herein, as well as the operation and function of the related elements of structure and the combination of parts and economies of manufacture, may be significantly improved upon consideration of the following description. All of which form a part of the disclosure of this specification, with reference to the accompanying drawings. It is to be expressly understood, however, that the drawings are for the purpose of illustration and description only and are not intended as a definition of the limits of the present disclosure. Flow charts are used herein to illustrate operations performed by systems according to embodiments of the present application. It should be understood that the preceding or following operations are not necessarily performed in the exact order in which they are performed. Rather, the various steps may be processed in reverse order or simultaneously. Meanwhile, other operations may be added to the processes, or a certain step or several steps of operations may be removed from the processes.
The following description is presented to enable any person skilled in the art to make and use the present disclosure, and is provided in the context of a particular application and its requirements. Various localized modifications to the disclosed embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the present application. Thus, the present application is not limited to the embodiments shown, but is to be accorded the widest scope consistent with the claims.
At present, short-circuit protection is not arranged in the SiC MOSFET circuit design, and part of the SiC MOSFET circuit design is also provided with the short-circuit protection in application, namely, the protection principle and design of Si IGBT devices are used, and static desaturation detection protection is arranged. Under normal working conditions, the IGBT device works in a saturation region when being switched on, works in a cut-off region when being switched off, and needs to pass through an amplification region in the switching-on and switching-off processes. When the short circuit occurs in the IGBT, the operating point of the IGBT enters the amplification region from the saturation region, i.e., the region with high voltage and large current, which is called desaturation. By sensing the voltage V between the collector and emitter of the IGBT CE The short circuit of the IGBT can be identified, and the implementation is generally static desaturation detection protection using a diode.
During detection, the blanking time can be set through the blanking capacitor, so that the SiC MOSFET does not send an error signal before the SiC MOSFET receives an opening signal and reaches saturation. After the blanking capacitance is sized, the tolerance (maximum) and constant current source (minimum) of the internal reference voltage must be known. In addition, considering that the protected SiC MOSFET must be safely turned off within a specified maximum short-circuit time, the identification of desaturation detection, internal processing, and the turning off of the SiC MOSFET must be completed within the maximum short-circuit time, so the selection of the size of the blanking capacitor is critical and difficult.
In addition, V DS SAT is measured by determining the voltage V by means of a current source and a high voltage diode DS At a high pressureThe diode has a high junction capacitance and is effective each time the SiC MOSFET is turned off, and the displacement current flowing through this high voltage diode is unnecessary and can interfere with other electronic devices.
Therefore, the protection circuit of the SiC MOSFET can be used for carrying out dynamic short circuit monitoring on a circuit where the SiC MOSFET is located, and the problems that parameters are difficult to set and other devices are interfered when the current short circuit detection is carried out are solved.
Referring to fig. 1, a protection circuit of a SiC MOSFET of an embodiment of the present application includes an output side logic control module, an output stage power amplification circuit, and a short circuit detection module, where the output side logic control module is configured to receive and output a driving pulse signal of the SiC MOSFET, and is further configured to output a control signal synchronized with the driving pulse signal, and the control signal is configured to control the short circuit detection module. The output stage power amplification circuit is electrically connected with the output side logic control module, and is configured to amplify the driving pulse signal and output the driving pulse signal to the SiC MOSFET. The short circuit detection module is electrically connected with the output side logic control module and the drain D of the SiC MOSFET, and is configured to receive the control signal and obtain a reference voltage signal, obtain a drain-source voltage signal of the SiC MOSFET at the same time, and output a detection result signal to the output side logic control module based on the drain-source voltage signal and the reference voltage signal.
Specifically, the short circuit detection module may be configured to compare the drain-source voltage signal with the reference voltage signal, and when the drain-source voltage signal is greater than the reference voltage signal, the operational amplifier signal is inverted, and the short circuit detection module outputs a short circuit signal to the output side logic control module. And when the drain-source voltage signal is less than or equal to the reference voltage signal, the operational amplifier signal is not inverted.
Referring to fig. 2, the short detection module 100 may include a comparator, a drain-source voltage signal source circuit, and a reference voltage signal source circuit. The comparator comprises a first input end, a second input end and an output end, wherein the first input end is electrically connected with the drain-source voltage signal source circuit forA source-drain voltage signal V input into the SiC MOSFET DS The second input end is electrically connected with the reference voltage signal source circuit and is used for inputting a reference voltage signal V ref And the output end is electrically connected with the output side logic control module and is used for outputting a detection result signal to the output side logic control module.
The drain-source voltage signal source circuit comprises a fifth resistor R5, a sixth resistor R6, a seventh resistor R7 and an eighth resistor R8. A first end of the fifth resistor R5 is electrically connected to the drain D of the SiC MOSFET, a second end of the fifth resistor R5 is electrically connected to a first end of the sixth resistor R6, and two ends of the fifth resistor R5 are further electrically connected to a second capacitor C2. The second end of the sixth resistor R6 is electrically connected to the first end of the seventh resistor R7, and both ends of the sixth resistor R6 are also electrically connected to a third capacitor C3. The second end of the seventh resistor R7 is electrically connected to the first input end of the comparator, and both ends of the seventh resistor R7 are also electrically connected to a fourth capacitor C4. The first end of the eighth resistor R8 is electrically connected with the first input end of the comparator, the second end of the eighth resistor R8 is connected with the output side ground GND, and the two ends of the eighth resistor R8 are also electrically connected with a fifth capacitor C5.
The reference voltage signal source circuit may include a third MOS transistor M3, a first voltage regulator diode T1, a ninth resistor R9, a sixth capacitor C6, and a tenth resistor R10. The gate of the third MOS transistor M3 is electrically connected to the output side logic control module, the source of the third MOS transistor M3 is connected to the output side ground GND, the drain of the third MOS transistor M3 is electrically connected to the anode of the first voltage regulator diode T1, and the on-off state of the third MOS transistor is controlled by the control signal output by the output side logic control module. A first end of the ninth resistor R9 is electrically connected to the cathode of the first zener diode T1, and a second end of the ninth resistor R9 is electrically connected to the second input end of the comparator. A first end of the sixth capacitor C6 is electrically connected to the second input end of the comparator, and a second end of the sixth capacitor C6 is connected to the output side ground GND. The first end of the tenth resistor R10 is electrically connected with the direct-current positive voltage VCC, and the second end of the tenth resistor R10 is electrically connected with the second input end of the comparator.
The embodiment of the application adopts a plurality of resistors connected in series to divide voltage to obtain a drain-source voltage signal V DS And the reference voltage signal V sent by the reference voltage signal source circuit is controlled by the control signal output by the output side logic control module ref While the control signal is synchronous with the drive pulse signal, the reference voltage signal V being on during the turn-on of the SiC MOSFET ref The adjustable characteristic is presented, so that the protection circuit of the embodiment of the application can realize dynamic detection.
FIG. 3 shows a source-drain voltage signal V when a SiC MOSFET is turned on from off and a short circuit occurs in a circuit thereof DS And a reference voltage signal V ref The change curve of (2). Wherein (a) shows that when the SiC MOSFET is turned off and initially turned on, the third MOS transistor M3 is turned off and the reference voltage signal V is applied ref Maintained at a DC positive voltage VCC, V in the figure T1 Represents the forward voltage, V, of the first zener diode T1 DS-SAT Representing the voltage drop of the SiC MOSFET. When the SiC MOSFET is switched on, the third MOS tube M3 is switched on, and the reference voltage signal V ref Decay from DC positive voltage VCC to V T1 +V R9 ，V R9 Generally small and essentially negligible. (b) The figure shows that when the SiC MOSFET is in a conducting state, if a circuit in which the SiC MOSFET is located is short-circuited (on-state short-circuit fault occurs at A), a source-drain voltage signal V DS From V DS-SAT Starting to rise when the source-drain voltage signal V DS Greater than a reference voltage signal V ref And when the short circuit occurs, the operational amplifier signal is turned over, and the short circuit signal is reported. (c) The figure shows that when the SiC MOSFET is turned on, if the circuit is short-circuited (short-circuit fault in the turn-on process occurs at B), the source-drain voltage signal V DS Greater than the reference voltage signal V ref And the operational amplifier signal is turned over, and the short circuit signal is reported.
In other embodiments, reasonable series-parallel adjustment of the resistors can be performed on the basis of the short circuit detection module 100 shown in fig. 2, so as to meet the requirement for the magnitude of the resistance in practical use. For example, at least one resistor is connected in series or in parallel with the drain-source voltage signal source circuit, or at least one resistor is connected in series or in parallel with the reference voltage signal source circuit. That is, even if the circuit element is simply adjusted in addition to fig. 2, it is within the scope of the present embodiment as long as the dynamic short detection principle of the present embodiment is adopted.
Referring to fig. 4, the protection circuit may further include an auxiliary detection module located between the kelvin pin K and the source pin of the SiC MOSFET, for detecting a current change rate (di/dt) of the SiC MOSFET. The existing driving circuit does not detect the current change rate of the SiC MOSFET, and the SiC MOSFET has larger di/dt under the conditions of normal operation, short-circuit fault, overcurrent fault and the like, so that the embodiment of the application adopts a device in a Kelvin pin packaging form, measures di/dt parameters from parasitic reactance between the Kelvin pin and a source electrode pin, and can be used as an auxiliary criterion for the short-circuit fault or the overcurrent fault.
In some embodiments, the auxiliary detection module 200 includes a second diode Z2, an eleventh resistor R11, a twelfth resistor R12, a seventh capacitor C7, and a transformer, an anode of the second diode Z2 and the kelvin pin are all connected to the output side ground GND, a cathode of the second diode Z2 is electrically connected to a first end of the eleventh resistor R11, and a second end of the eleventh resistor R11 is electrically connected to the source S of the SiC MOSFET. A first end of the twelfth resistor R12 is electrically connected to the cathode of the second diode Z2, a second end of the twelfth resistor R12 is electrically connected to a first end of the seventh capacitor C7, and a second end of the seventh capacitor C7 is electrically connected to the source S of the SiC MOSFET. And the primary side of the transformer is electrically connected with two ends of the seventh capacitor C7, one end of the secondary side of the transformer is electrically connected with the output side logic control module, and the other end of the secondary side of the transformer is connected with the ground GND (ground) of the output side.
The output stage power amplifying circuit can be a totem-pole structure built by adopting a power operational amplifier or a discrete element and is used for amplifying the power of a driving signal. By way of example, the output stage power amplifying circuit may be a push-pull driving circuit including a PMOS transistor and an NMOS transistor, or a push-pull driving circuit including NPN and PNP transistors.
Referring to fig. 5, the output stage power amplifying circuit 300 according to the embodiment of the present application is, for example, a push-pull driving circuit including a PMOS transistor and an NMOS transistor. Specifically, the output stage power amplifying circuit 300 may include an amplifier, a PMOS transistor P, an NMOS transistor N, and a third resistor R3 as an output resistor, and may further include R1 as a turn-off resistor. The input end of the amplifier is electrically connected with the output side logic control module, and the amplifier is also electrically connected with a direct current positive voltage VCC, a direct current negative voltage VEE and an output side ground GND. The source electrode of the PMOS tube P is electrically connected with the direct-current voltage VCC, the grid electrode of the PMOS tube P is electrically connected with the output end of the amplifier, and the drain electrode of the PMOS tube P is electrically connected with the grid electrode of the SiC MOSFET through the third resistor R3. The source electrode of the NMOS tube is electrically connected with the direct-current negative voltage VEE, the grid electrode of the NMOS tube is electrically connected with the output end of the amplifier, and the NMOS tube is electrically connected with the grid electrode of the SiC MOSFET through a first resistor R1.
The circuit structure of the output side logic control module only needs to be capable of receiving the drive pulse signal of the SiC MOSFET and outputting the drive pulse signal to the output stage power amplification circuit, and to output a control signal synchronized with the drive pulse signal to the short circuit detection module.
Referring to fig. 6, in some embodiments, the protection circuit further includes an input side logic control module, configured to receive a driving pulse signal of the SiC MOSFET and output the driving pulse signal to the output side logic control module, and the output side logic control module further feeds back a detection result signal to the input side logic control module. The specific structure of the input side logic control module is not limited, and any circuit structure capable of realizing the above functions may be adopted.
And a second coding and decoding module can be electrically connected between the input side logic control module and the output side logic control module. The second codec module includes: the feedback coding module is electrically connected with the output side logic control module; and the feedback decoding module is in signal isolation with the feedback coding module and is electrically connected with the input side logic control module.
The embodiment of the application also provides a protection method of the SiC MOSFET, which can be realized by the protection circuit, and can also be realized by other conversion circuits. The protection method comprises the following steps: the output side logic control module receives and outputs the driving pulse signal of the SiC MOSFET and is also used for outputting a control signal synchronous with the driving pulse signal; the output stage power amplification circuit amplifies the driving pulse signal and outputs the driving pulse signal to the SiC MOSFET; and the short circuit detection module receives the control signal and obtains a reference voltage signal, obtains a drain-source voltage signal of the SiC MOSFET at the same time, and outputs a detection result signal to the output side logic control module based on the drain-source voltage signal and the reference voltage signal.
In some embodiments, the method of outputting a detection result signal to the output side logic control module based on the drain-source voltage signal and the reference voltage signal includes: and comparing the drain-source voltage signal with the reference voltage signal, when the drain-source voltage signal is greater than the reference voltage signal, the operational amplifier signal is turned over, and the short circuit detection module outputs a short circuit signal to the output side logic control module. And when the drain-source voltage signal is smaller than the reference voltage signal, the operational amplifier signal is not turned over.
In view of the above, it will be apparent to those skilled in the art upon reading the present application that the foregoing application content may be presented by way of example only, and may not be limiting. Those skilled in the art will appreciate that the present application is intended to cover various reasonable variations, adaptations, and modifications of the embodiments described herein, although not explicitly described herein. Such alterations, modifications, and variations are intended to be within the spirit and scope of the exemplary embodiments of this application.
It will be further understood that, although the terms first, second, third, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Thus, a first element in some embodiments may be termed a second element in other embodiments without departing from the teachings of the present application. The same reference numerals or the same reference characters denote the same elements throughout the specification.
Claims (10)
1. A protection circuit for a SiC MOSFET, comprising:
the output side logic control module is used for receiving and outputting the driving pulse signal of the SiC MOSFET and is also used for outputting a control signal synchronous with the driving pulse signal;
the output stage power amplification circuit is electrically connected with the output side logic control module, is configured to amplify the driving pulse signal and outputs the driving pulse signal to the SiC MOSFET;
and the short circuit detection module is electrically connected with the output side logic control module and the drain electrode of the SiC MOSFET, is configured to receive the control signal and obtain a reference voltage signal, simultaneously obtains a drain-source voltage signal of the SiC MOSFET, and outputs a detection result signal to the output side logic control module based on the drain-source voltage signal and the reference voltage signal.
2. The protection circuit of the SiC MOSFET of claim 1, wherein the short detection module comprises:
the comparator comprises a first input end, a second input end and an output end, wherein the output end is electrically connected with the output side logic control module;
the drain-source voltage signal source circuit is electrically connected with the first input end;
and the reference voltage signal source circuit is electrically connected with the second input end.
3. The protection circuit of the SiC MOSFET of claim 2, wherein the drain-source voltage signal source circuit comprises:
a first end of the fifth resistor is electrically connected with the drain electrode of the SiC MOSFET, and two ends of the fifth resistor are also electrically connected with a second capacitor;
a first end of the sixth resistor is electrically connected with a second end of the fifth resistor, and two ends of the sixth resistor are also electrically connected with a third capacitor;
a first end of the seventh resistor is electrically connected with a second end of the sixth resistor, a second end of the seventh resistor is electrically connected with the first input end, and two ends of the seventh resistor are also electrically connected with a fourth capacitor;
and the first end of the eighth resistor is electrically connected with the first input end, the second end of the eighth resistor is connected with the output side ground, and the two ends of the eighth resistor are also electrically connected with a fifth capacitor.
4. The protection circuit of the SiC MOSFET of claim 2, wherein the reference voltage signal source circuit comprises:
a gate of the third MOS transistor is electrically connected to the output side logic control module, a source of the third MOS transistor is connected to the output side ground, and the third MOS transistor is controlled by the control signal;
the anode of the first voltage stabilizing diode is electrically connected with the drain electrode of the third MOS tube;
a ninth resistor, a first end of which is electrically connected to the cathode of the first zener diode and a second end of which is electrically connected to the second input terminal;
a first end of the sixth capacitor is electrically connected with the second input end, and a second end of the sixth capacitor is connected with the output side ground;
and a tenth resistor, wherein a first end of the tenth resistor is electrically connected with the direct-current positive voltage, and a second end of the tenth resistor is electrically connected with the second input end.
5. The protection circuit of the SiC MOSFET of claim 1, further comprising: and the auxiliary detection module is positioned between the Kelvin pin and the source electrode pin of the SiC MOSFET and used for detecting the current change rate of the SiC MOSFET.
6. The protection circuit of the SiC MOSFET of claim 5, wherein said auxiliary detection module comprises:
the anode of the second diode is connected with the output side ground;
an eleventh resistor, a first end of which is electrically connected to the cathode of the second diode, and a second end of which is electrically connected to the source of the SiC MOSFET;
a twelfth resistor, a first end of the twelfth resistor being electrically connected to the cathode of the second diode;
a first end of the seventh capacitor is electrically connected with a second end of the twelfth resistor, and a second end of the seventh capacitor is electrically connected with the source electrode of the SiC MOSFET;
and the primary side of the transformer is electrically connected with two ends of the seventh capacitor, one end of the secondary side of the transformer is electrically connected with the output side logic control module, and the other end of the secondary side of the transformer is connected with the output side ground.
7. The protection circuit of the SiC MOSFET as recited in claim 1, wherein the output stage power amplification circuit comprises a push-pull driving circuit formed by PMOS transistor and NMOS transistor, or comprises a push-pull driving circuit formed by NPN and PNP triode.
8. The protection circuit of the SiC MOSFET of claim 7, wherein the output stage power amplification circuit comprises:
the input end of the amplifier is electrically connected with the output side logic control module, and the amplifier is also electrically connected with a direct current positive voltage, a direct current negative voltage and an output side ground;
the source electrode of the PMOS tube is electrically connected with the direct-current positive voltage, the grid electrode of the PMOS tube is electrically connected with the output end of the amplifier, and the drain electrode of the PMOS tube is electrically connected with the grid electrode of the SiC MOSFET through a third resistor;
and the source electrode of the NMOS tube is electrically connected with the direct-current negative voltage, the grid electrode of the NMOS tube is electrically connected with the output end of the amplifier, and the drain electrode of the NMOS tube is electrically connected with the grid electrode of the SiC MOSFET through a first resistor.
9. The protection circuit of the SiC MOSFET of claim 1, further comprising an input side logic control module for receiving the driving pulse signal of the SiC MOSFET and outputting to the output side logic control module, wherein the output side logic control module further feeds back the detection result signal to the input side logic control module.
10. The protection circuit of the SiC MOSFET of claim 9, wherein a second codec module is electrically connected between the input side logic control module and the output side logic control module, and the second codec module comprises:
the feedback coding module is electrically connected with the output side logic control module;
and the feedback decoding module is in signal isolation with the feedback coding module and is electrically connected with the input side logic control module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221194725.5U CN218386794U (en) | 2022-05-09 | 2022-05-09 | Protection circuit of SiC MOSFET |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221194725.5U CN218386794U (en) | 2022-05-09 | 2022-05-09 | Protection circuit of SiC MOSFET |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218386794U true CN218386794U (en) | 2023-01-24 |
Family
ID=84960289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221194725.5U Active CN218386794U (en) | 2022-05-09 | 2022-05-09 | Protection circuit of SiC MOSFET |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218386794U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116990655A (en) * | 2023-09-26 | 2023-11-03 | 安徽大学 | Transistor short circuit detection circuit and method based on drain-source voltage change rate |
-
2022
- 2022-05-09 CN CN202221194725.5U patent/CN218386794U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116990655A (en) * | 2023-09-26 | 2023-11-03 | 安徽大学 | Transistor short circuit detection circuit and method based on drain-source voltage change rate |
| CN116990655B (en) * | 2023-09-26 | 2023-12-19 | 安徽大学 | Transistor short circuit detection circuit and method based on drain-source voltage change rate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN211930609U (en) | SiC MOSFET short-circuit protection circuit based on short-circuit current suppression | |
| CN105577153B (en) | Semiconductor device with a plurality of semiconductor chips | |
| US8537515B2 (en) | Driving circuit and semiconductor device with the driving circuit | |
| US6737842B2 (en) | Method and circuits for reducing dead time and reverse recovery loss in buck regulators | |
| US6212084B1 (en) | Active rectifier | |
| CN107769530B (en) | SiC switching tube driving circuit and method of synchronous rectification Buck converter | |
| US6628532B1 (en) | Drive circuit for a voltage-controlled switch | |
| CN111600461A (en) | Improved SiC MOSFET bridge arm crosstalk suppression driving circuit and method | |
| CN218386794U (en) | Protection circuit of SiC MOSFET | |
| Yin et al. | Design considerations and comparison of high-speed gate drivers for Si IGBT and SiC MOSFET modules | |
| CN114814515A (en) | Short circuit detection circuit and method of SiC MOSFET | |
| CN213783268U (en) | Gallium nitride transistor drive circuit | |
| Chokhawala et al. | IGBT fault current limiting circuit | |
| US9397207B2 (en) | Gated thyristor power device | |
| CN114915145A (en) | Soft turn-off circuit and method of SiC MOSFET | |
| WO2020224234A1 (en) | Drive circuit for sic-metal-oxide-semiconductor field-effect transistor (sic-mosfet) | |
| CN116449249A (en) | Silicon carbide MOSFET short circuit detection circuit and device | |
| US11552632B1 (en) | Gate drive apparatus and method thereof | |
| CN218867915U (en) | Protection circuit of SiC MOSFET | |
| CN113676029B (en) | Active clamp circuit based on IGBT | |
| US11876436B2 (en) | Voltage detecting apparatus and method for switching power converters | |
| Liu et al. | Investigation of GaN and Si based full-bridge converters for DC motor drive | |
| CN112769422A (en) | Switching circuit | |
| JPH06105448A (en) | Switch device with protecting function | |
| CN220896521U (en) | SiC MOSFET driving circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |