CN113571603A - Preparation method of solar cell - Google Patents
Preparation method of solar cell Download PDFInfo
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- CN113571603A CN113571603A CN202110851407.5A CN202110851407A CN113571603A CN 113571603 A CN113571603 A CN 113571603A CN 202110851407 A CN202110851407 A CN 202110851407A CN 113571603 A CN113571603 A CN 113571603A
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- 238000005240 physical vapour deposition Methods 0.000 claims description 20
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
- H01L31/1888—Manufacture of transparent electrodes, e.g. TCO, ITO methods for etching transparent electrodes
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
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- Y02E10/00—Energy generation through renewable energy sources
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Abstract
The invention provides a preparation method of a solar cell, which comprises the following steps: providing a substrate device, wherein the substrate device is provided with a first surface and a second surface which are oppositely arranged and a side surface connected with the first surface and the second surface; forming a first transparent conductive film on the first surface; forming a second transparent conductive film on the second surface; forming an additional transparent conductive film on the side surface in the process of forming the first transparent conductive film and/or forming the second transparent conductive film; and removing the additional transparent conductive film. The method can avoid the conduction of the transparent conductive film and other layer structures without forming 'retraction' of the opposite edges of the transparent conductive film, and also ensures that the area of the first surface of the substrate device covered by the first transparent conductive film is larger, and the area of the second surface of the substrate device covered by the second transparent conductive film is larger, so that current carriers can be effectively absorbed and transmitted by the first transparent conductive film and the second transparent conductive film, the short-circuit current loss is reduced, and the photoelectric conversion efficiency of the solar cell is improved.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a preparation method of a solar cell.
Background
The solar cell is a high-efficiency clean energy, takes a HeteroJunction cell (HJT for short) as an example, and has the advantages of high conversion efficiency, low attenuation, low temperature coefficient and the like. The solar cell generates carriers through photoelectric conversion under the action of sunlight, but the mobility of the carriers in the solar cell is low due to the limitation of the internal structure of the solar cell, and the cell current cannot be sufficiently collected. In order to solve the problem, a film which can conduct electricity and transmit light is used for transporting charges, and then current collection is carried out through a metal electrode. The conductive and Transparent thin film may be, for example, a Transparent Conductive Oxide (TCO) film, and the high-quality Transparent conductive film can effectively improve the photoelectric conversion efficiency of the heterojunction cell.
The most common method for depositing a transparent conductive film at present is a Physical Vapor Deposition (PVD), in particular, a vacuum sputtering coating process, which is based on the basic principle that accelerated gas energetic particles (Ar +) bombard a coating target under the action of an electromagnetic field, and atoms on the surface of the target obtain energy to escape from the surface and then deposit on the surface of a substrate (a semi-finished product of a cell after amorphous silicon coating) to form the transparent conductive film. In addition, the Reactive Plasma Deposition (RPD) process is also applied to the coating of transparent conductive films. In the coating equipment, argon (Ar) generates plasma through a plasma gun, the Ar plasma is guided by a magnetic field to bombard a target material, and the target material is sublimated after the temperature is raised to generate gas and then is deposited on a substrate to form a transparent conductive film.
In the transparent conductive film coating method in the prior art, insulation between the transparent conductive film and other layer structures needs to be considered no matter in a vacuum sputtering coating mode or a reactive plasma deposition mode, so that reduction of battery efficiency caused by interlayer short circuit is avoided. The current method is to use a circle of mask to electrically isolate when preparing the transparent conductive film, i.e. to make the circle of area blocked by the mask not deposit the transparent conductive material, thereby forming the indentation of the opposite edge of the transparent conductive film. The "setback" can prevent the transparent conductive film from conducting with other layer structures, but at the same time, the "setback" region loses the charge transport capability, resulting in the reduction of the battery efficiency.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to overcome the problem in the prior art that the photoelectric conversion efficiency of the heterojunction cell needs to be improved, thereby providing a method for manufacturing a solar cell.
The invention provides a preparation method of a solar cell, which comprises the following steps: providing a substrate device, wherein the substrate device is provided with a first surface and a second surface which are oppositely arranged and a side surface connected with the first surface and the second surface; forming a first transparent conductive film on the first surface; forming a second transparent conductive film on the second surface; forming an additional transparent conductive film on at least a part of the side surface in the process of forming the first transparent conductive film and/or forming the second transparent conductive film; and removing the additional transparent conductive film.
Optionally, the additional transparent conductive film includes a first sub additional transparent conductive film and a second sub additional transparent conductive film; the first sub additional transparent conductive film is formed in the process of forming the first transparent conductive film, and the second sub additional transparent conductive film is formed in the process of forming the second transparent conductive film.
Optionally, after forming the first transparent conductive film, forming the second transparent conductive film; alternatively, the first transparent conductive film is formed after the second transparent conductive film is formed.
Optionally, the step of forming the first transparent conductive film and the first sub additional transparent conductive film includes: providing a carrier plate; placing the substrate device on a supporting surface of the carrier plate, exposing the first surface, and forming a first transparent conductive film and a first sub-additional transparent conductive film through a first film plating process; the step of forming the second transparent conductive film and the second sub additional transparent conductive film includes: and placing the substrate device on the supporting surface of the carrier plate, exposing the second surface, and forming a second transparent conductive film and a second sub-additional transparent conductive film through a second film coating process.
Optionally, in the first coating process, the second surface faces the support surface of the carrier plate, and a coating source used in the first coating process is located above the carrier plate; preferably, the first coating process comprises a physical vapor deposition process.
Optionally, in the first coating process, the first surface faces a support surface of the carrier plate, a part of the first surface contacts the support surface of the carrier plate, and a gap is formed between a sidewall of the substrate device and an inner sidewall of the carrier plate; the coating source adopted in the first coating process is positioned below the carrier plate; preferably, the first coating process includes a reactive plasma deposition process or a physical vapor deposition process.
Optionally, in the second coating process, the first surface faces a support surface of the carrier plate, and a coating source used in the second coating process is located above the carrier plate; preferably, the second coating process comprises a physical vapor deposition process.
Optionally, in the second coating process, the second surface faces the support surface of the carrier plate, a part of the second surface contacts the support surface of the carrier plate, a gap is formed between a sidewall of the substrate device and an inner sidewall of the carrier plate, and a coating source used in the second coating process is located below the carrier plate; the second coating process comprises a reactive plasma deposition process or a physical vapor deposition process.
Optionally, the transverse dimension of the gap is 0.1mm to 0.2 mm.
Optionally, providing a substrate device includes: forming a plurality of substrate devices, wherein the plurality of substrate devices comprise a first substrate device to an Nth substrate device; the method for removing the additional transparent conductive film comprises the following steps: providing a clamp, wherein the clamp comprises a first clamping plate and a second clamping plate which are oppositely arranged; after the first transparent conductive film, the second transparent conductive film and the additional transparent conductive film are formed, stacking the first substrate device to the Nth substrate device between the first clamping plate and the second clamping plate, wherein the k substrate device is positioned on one side surface of the k +1 th substrate device, which faces away from the second clamping plate, N is an integer greater than or equal to 2, k is an integer greater than or equal to 1 and less than or equal to N-1, and the additional transparent conductive film on the side walls of the first substrate device to the Nth substrate device is completely exposed; after the first substrate device to the Nth substrate device are stacked between the first clamping plate and the second clamping plate, the additional transparent conductive film is removed by adopting an etching process.
Optionally, the etching gas of the plasma etching process includes carbon tetrafluoride or methane and a combination thereof with argon or oxygen, wherein: in the combination containing oxygen, the flow rate of carbon tetrafluoride or methane is 300sccm to 800sccm, the flow rate of oxygen is 40sccm to 300sccm, the pressure of a chamber is 30Pa to 100Pa, and the etching power density is 2400W/m2～8000W/m2Etching for 5-25 min; in the combination containing argon, the flow rate of carbon tetrafluoride or methane is 10sccm to 200sccm, the flow rate of argon is 10sccm to 160sccm, the pressure of a chamber is 30Pa to 100Pa, and the etching power density is 400W/m2～1600W/m2The etching time is 5min-25 min.
Optionally, the etching gas used further includes oxygen, and the flow rate of the oxygen is less than or equal to 50 sccm.
Optionally, the carrier plate includes: the carrier plate comprises a carrier plate body, wherein an opening penetrating through the carrier plate body is formed in the carrier plate body; the plurality of spaced protruding support parts are positioned in the opening and are fixedly connected with the carrier plate body; the protruding support is adapted to support a portion of the substrate device.
Optionally, the opening has a first inner side wall and a second inner side wall which are arranged oppositely, and the plurality of spaced protruding support parts are fixed with the first inner side wall and the second inner side wall.
Optionally, the plurality of spaced protruding supports include a first support, a second support, a third support, and a fourth support; first supporting part and second supporting part with first inside wall fixed connection, third supporting part and fourth supporting part with second inside wall fixed connection, first supporting part sets up with the third supporting part relatively, second supporting part and fourth supporting part set up relatively.
Optionally, the transverse length of the support part is 0.1 mm-0.7 mm; the transverse width of the supporting part is 0.1 mm-0.7 mm.
The technical scheme of the invention has the following beneficial effects:
1. in the process of forming the first transparent conductive film and/or the second transparent conductive film, although the additional transparent conductive film is formed on the side surface, the area of the first transparent conductive film covering the first surface of the substrate device is larger, and the area of the second transparent conductive film covering the second surface of the substrate device is larger, so that current carriers in the substrate device can be effectively absorbed and transmitted by the first transparent conductive film and the second transparent conductive film; and meanwhile, the additional transparent conductive film is removed, so that the first transparent conductive film and the second transparent conductive film can be prevented from being conducted due to the removal of the additional transparent conductive film on the side surface of the substrate device.
2. Furthermore, a film coating source adopted in the first film coating process is positioned above the carrier plate, the first surface of the substrate device cannot be shielded by the carrier plate, the first surface is completely covered by the first transparent conductive film, and current carriers in the substrate device can be effectively absorbed and transmitted by the first transparent conductive film and the second transparent conductive film, so that the short-circuit current loss is reduced; meanwhile, the current carriers in the substrate device can be effectively absorbed and transmitted by the first transparent conductive film, the short-circuit current loss is reduced, and the photoelectric conversion efficiency of the solar cell is improved.
3. Similarly, the coating source adopted in the second coating process is positioned above the carrier plate, the second surface of the substrate device cannot be shielded by the carrier plate, the second surface is completely covered by the second transparent conductive film, and current carriers in the substrate device can be effectively absorbed and transmitted by the second transparent conductive film, so that the short-circuit current loss is reduced, and the photoelectric conversion efficiency of the solar cell is improved.
4. Furthermore, the first surface faces the supporting surface of the carrier plate, part of the first surface is contacted with the supporting surface of the carrier plate, and a coating source adopted in the first coating process is positioned below the carrier plate; in the process of forming the first transparent conductive film, the first transparent conductive film is also formed on the first surface which is not in contact with the supporting surface, the area of the first transparent conductive film covering the first surface is large, and current carriers in the substrate device can be effectively absorbed and transmitted by the first transparent conductive film, so that the short-circuit current loss is reduced, and the photoelectric conversion efficiency of the solar cell is improved.
5. Similarly, the second surface faces the supporting surface of the carrier plate, part of the second surface is contacted with the supporting surface of the carrier plate, and a coating source adopted in the second coating process is positioned below the carrier plate; in the process of forming the second transparent conductive film, the second transparent conductive film is also formed on the second surface which is not in contact with the supporting surface, the area of the second surface covered by the second transparent conductive film is large, and current carriers in the substrate device can be effectively absorbed and transmitted by the second transparent conductive film, so that the short-circuit current loss is reduced, and the photoelectric conversion efficiency of the solar cell is improved.
6. Further, the protruding support of the carrier plate is adapted to support a portion of the substrate device, such that the edge of the lower surface of the substrate device is only partially covered by the carrier plate, and the area of the lower surface of the substrate device covered by the first transparent conductive film and/or the second transparent conductive film is larger. Due to the fact that the size of the supporting portion is small, the shielding area of the supporting portion to the first surface and/or the second surface is small, the area of the first transparent conductive film covering the first surface and/or the area of the second transparent conductive film covering the second surface are increased, carriers in the substrate device can be effectively absorbed and transmitted by the first transparent conductive film and/or the second transparent conductive film, short-circuit current loss is reduced, and photoelectric conversion efficiency of the solar cell is improved.
7. Further, after forming the first transparent conductive film, the second transparent conductive film, and the additional transparent conductive film, the first substrate device to the nth substrate device are stacked between the first clamping plate and the second clamping plate, and the additional transparent conductive film is removed through a plasma etching process. The first transparent conductive film and the second transparent conductive film are shielded by the first clamping plate, the second clamping plate and the adjacent first transparent conductive film or the second transparent conductive film, so that the first transparent conductive film and the second transparent conductive film are prevented from being removed in a plasma etching process, the additional transparent conductive films of a plurality of substrate devices are removed simultaneously through the plasma etching process, the removal precision is high, the removal efficiency is high, and the preparation efficiency of the solar cell is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing a solar cell according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a carrier according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a plurality of substrate devices placed in a fixture according to an embodiment of the present invention.
Reference numerals:
1-a carrier plate body; 1 a-an opening; 1 b-a first inner side wall; 1 c-a second inner side wall; 2-a protruding support; 201-a first support; 202-a second support; 203-a third support; 204-a fourth support; 3-a kth substrate device; 4-clamping; 401-a first splint; 402-second splint.
Detailed Description
The inventor finds that, in the process of forming the transparent conductive film of the heterojunction battery, no matter in a vacuum sputtering coating mode or a reactive plasma deposition mode, due to the shielding of the carrier plate which plays a role in electrical isolation and support in the coating chamber, the transparent conductive film on at least one side of the substrate device cannot completely cover the surface of the substrate device, so that each side of the transparent conductive film on the side is contracted by about 1mm, 2.4% of the area of the side is not covered by the transparent conductive film, carriers in the part of the area cannot be absorbed and transmitted, the current of the heterojunction battery is directly influenced, and the photoelectric conversion efficiency of the heterojunction battery is finally influenced. Therefore, the invention provides a preparation method of a solar cell.
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
An embodiment of the present invention provides a method for manufacturing a solar cell, please refer to fig. 1, which includes the following steps:
s1: providing a substrate device having a first surface and a second surface arranged oppositely and a side surface connected with the first surface and the second surface.
S2: forming a first transparent conductive film on the first surface, or further forming an additional transparent conductive film on at least a part of the side surface. Specifically, a first sub-additional transparent conductive film is formed on at least a part of the side surface at the same time.
S3: forming a second transparent conductive film on the second surface, or further forming an additional transparent conductive film on at least a part of the side surface. Specifically, a second sub-additional transparent conductive film is formed on at least a part of the side surface at the same time.
S4: and removing the additional transparent conductive film.
The structure of the substrate device is as follows: an N-type silicon wafer is taken as a substrate, and an intrinsic amorphous silicon thin film and a P-type amorphous silicon thin film are sequentially arranged on the front side of the substrate outwards; and the intrinsic amorphous silicon thin film and the N-type amorphous silicon thin film are arranged on the back surface of the substrate outwards in sequence. The outer surface of the P-type amorphous silicon thin film is a first surface, and step S2 deposits a transparent conductive oxide on the basis of the first surface to form a first transparent conductive film; the outer surface of the N-type amorphous silicon thin film is the second surface, and step S3 deposits a transparent conductive oxide on the basis of the second surface to form a second transparent conductive film.
It should be understood herein that the preparation order of the step S2 and the step S3 is not limited. The additional transparent conductive films formed in steps S2 and S3 may be formed separately or in combination of three types, that is, a first transparent conductive film and a first subsidiary additional transparent conductive film formed separately on the first surface, a second transparent conductive film and a second subsidiary additional transparent conductive film formed separately on the second surface, and a first transparent conductive film and a first subsidiary additional transparent conductive film formed on the first surface and a second transparent conductive film formed on the second surface. In view of the generality of the embodiments, the embodiments will be described in detail with reference to a case where the first transparent conductive film and the first sub additional transparent conductive film are formed on the first surface and the second transparent conductive film and the second sub additional transparent conductive film are formed on the second surface at the same time as an example.
The additional transparent conductive film includes a first sub additional transparent conductive film and a second sub additional transparent conductive film. The first sub additional transparent conductive film is formed in the process of forming the first transparent conductive film, and the second sub additional transparent conductive film is formed in the process of forming the second transparent conductive film.
Forming the second transparent conductive film after forming the first transparent conductive film; alternatively, the first transparent conductive film is formed after the second transparent conductive film is formed.
In this embodiment, a description will be given taking as an example that after a first transparent conductive film and a first sub additional transparent conductive film are formed, a second transparent conductive film and a second sub additional transparent conductive film are formed.
The step of forming the first transparent conductive film and the first sub additional transparent conductive film includes: providing a carrier plate; and placing the substrate device on the supporting surface of the carrier plate, exposing the first surface, and forming a first transparent conductive film and a first sub-additional transparent conductive film through a first film plating process.
The step of forming the second transparent conductive film and the second sub additional transparent conductive film includes: and placing the substrate device on the supporting surface of the carrier plate, exposing the second surface, and forming a second transparent conductive film and a second sub-additional transparent conductive film through a second film coating process.
In other embodiments, after the second transparent conductive film and the second sub additional transparent conductive film are formed, the first transparent conductive film and the first sub additional transparent conductive film are formed. Because the carrier plate has a supporting function for the substrate device to be plated, namely at least partial supporting function for the edge of the substrate device, the part having the supporting function can generate an edge mask effect in the film plating process.
In one embodiment, in the first coating process, the first surface faces away from the carrier plate, the second surface faces towards the supporting surface of the carrier plate, and the coating source used in the first coating process is located above the carrier plate (top coating mode). At the moment, the first surface of the substrate device can directly receive the action of a film coating source, the situation that the first surface is shielded by an edge mask of the carrier plate does not exist, the film coating source can directly act on the first surface to form a first transparent conductive film, so that the first surface is completely covered by the first transparent conductive film, current carriers in the substrate device can be effectively absorbed and transmitted by the first transparent conductive film, the short-circuit current loss is reduced, and the photoelectric conversion efficiency of the solar cell is improved. In this case, the first plating process includes a physical vapor deposition process. The same applies to the principle of forming transparent conductive films in different coating processes.
In another embodiment, in the first film coating process, the first surface faces the supporting surface of the carrier plate, part of the first surface is in contact with the supporting surface of the carrier plate, and a gap is formed between the side wall of the substrate device and the inner side wall of the carrier plate, so that the first sub-additional transparent conductive film is easy to form; the coating source used in the first coating process is located below the carrier plate (lower coating mode). In the process of forming the first transparent conductive film, the first transparent conductive film is also formed on the first surface which is not in contact with the supporting surface, the area of the first transparent conductive film covering the first surface is large, and current carriers in the substrate device can be effectively absorbed and transmitted by the first transparent conductive film, so that the short-circuit current loss is reduced, and the photoelectric conversion efficiency of the solar cell is improved. In this case, the first coating process includes a Reactive Plasma Deposition (RPD) process or a Physical Vapor Deposition (PVD) process.
In one embodiment, the first surface faces the supporting surface of the carrier plate in the second coating process, and the coating source used in the second coating process is located above the carrier plate. The second surface of the substrate device cannot be shielded by the edge mask of the carrier plate, the second surface is completely covered by the second transparent conductive film, and current carriers in the substrate device can be effectively absorbed and transmitted by the second transparent conductive film, so that the short-circuit current loss is reduced, and the photoelectric conversion efficiency of the solar cell is improved. In this case, the second plating process includes a physical vapor deposition process.
In one embodiment, in the second coating process, the second surface faces the supporting surface of the carrier plate, part of the second surface is in contact with the supporting surface of the carrier plate, and a gap is formed between the side wall of the substrate device and the inner side wall of the carrier plate, so that the second sub-additional transparent conductive film is easy to form. The coating source adopted in the second coating process is positioned below the carrier plate. In the process of forming the second transparent conductive film, the second transparent conductive film is also formed on the second surface which is not in contact with the supporting surface, the area of the second surface covered by the second transparent conductive film is large, and current carriers in the substrate device can be effectively absorbed and transmitted by the second transparent conductive film, so that the short-circuit current loss is reduced, and the photoelectric conversion efficiency of the solar cell is improved. Similarly, the second coating process comprises a reactive plasma deposition process or a physical vapor deposition process.
In the above-mentioned coating process, when the transparent conductive film is formed on the surface to be coated (the first surface and the second surface), the surface to be coated may be disposed on the same side of the coating source, or disposed on the opposite side of the coating source, which is not limited herein. In general, a Physical Vapor Deposition (PVD) process is a top-down coating process, and by turning over, a full-area film can be formed on a double-sided surface to be coated; the reactive plasma deposition process is a coating mode from bottom to top, and can realize near-full-area film formation (about five-ten-thousandth of mask shielding) of double-sided surfaces to be coated by turning over. Of course, an upper coating mode can be adopted for one surface of the substrate device, and a lower coating mode can be adopted for the other surface of the substrate device, and although the first surface and the second surface are finished in different chambers, the turnover is not needed, and the transportation process can be simplified.
From the above description, when the surfaces to be plated (the first surface and the second surface) both adopt the upper plating mode, that is, the first surface and the second surface are disposed above the PVD plating source, the first surface and the second surface are not shielded by the edge mask of the carrier, so that the area of the transparent conductive film formed on the surfaces to be plated is larger, and the short-circuit current can be maximized. When the surfaces to be plated (the first surface and the second surface) are both simultaneously plated in a lower plating mode, namely the first surface and the second surface are arranged below the RPD plating source, although the first surface and the second surface are slightly shielded by the edge mask of the carrier plate, the short-circuit current can also reach the maximum due to the high film forming quality. At this time, the first surface and the second surface both relate to the operation of turning over the substrate device to be plated in the process engineering, and the turning over operation can be realized by using the existing turning over mechanism, which is not described herein again. After the turn-over operation is performed, the conversion efficiency of the battery is also highest because the short-circuit current of the battery is the largest.
The material of the transparent conductive film formed by Physical Vapor Deposition (PVD) process includes metal oxides of Sn, W, such as Sn-doped indium oxide or W-doped indium oxide; the material of the transparent conductive film formed by the reactive plasma deposition process (RPD) comprises metal oxides of titanium Ti, zirconium Zr, hafnium Hf, cerium Ce and tungsten W. The above-mentioned oxide can be reacted with In2O3Mutual dissolution is carried out, and better membrane layer quality is obtained.
Referring to fig. 2, the carrier includes: the carrier plate comprises a carrier plate body 1, wherein an opening 1a penetrating through the carrier plate body 1 is formed in the carrier plate body 1; the support plate comprises a plurality of spaced protruding support parts 2, wherein the protruding support parts 2 are positioned in the opening 1a and are fixedly connected with the carrier plate body 1; the protruding support 2 is adapted to support a portion of the substrate device. Therefore, the edge of the lower surface of the substrate device is only partially shielded by the carrier plate, and the area of the lower surface of the substrate device covered by the first transparent conductive film and/or the second transparent conductive film is larger.
Preferably, the opening 1a has a first inner sidewall 1b and a second inner sidewall 1c which are oppositely arranged, and the plurality of spaced protruding supports 2 are fixed with the first inner sidewall 1b and the second inner sidewall 1 c.
Preferably, the plurality of spaced apart protruding supports 2 include a first support 201, a second support 202, a third support 203, and a fourth support 204; the first supporting portion 201 and the second supporting portion 202 are fixedly connected with the first inner side wall 1b, the third supporting portion 203 and the fourth supporting portion 204 are fixedly connected with the second inner side wall 1c, the first supporting portion 201 and the third supporting portion 203 are arranged oppositely, and the second supporting portion 202 and the fourth supporting portion 204 are arranged oppositely.
Preferably, the support has a transverse length of 0.1mm to 0.7mm, for example 0.1mm, 0.3mm, 0.5mm or 0.7 mm; the support portion has a lateral width of 0.1mm to 0.7mm, for example, 0.1mm, 0.3mm, 0.5mm, or 0.7 mm. The size of the supporting part is small, the shielding area of the supporting part on the first surface and/or the second surface is small, the area of the first transparent conductive film covering the first surface and/or the area of the second transparent conductive film covering the second surface are increased, carriers in the substrate device can be effectively absorbed and transmitted by the first transparent conductive film and/or the second transparent conductive film, short-circuit current loss is reduced, and the photoelectric conversion efficiency of the solar cell is improved.
The transverse dimension of the void is 0.1mm to 0.2mm, for example 0.1mm, 0.15mm or 0.2 mm. A gap is formed between the side wall of the substrate device and the inner side wall of the carrier plate, so that the substrate device is convenient to take and place.
In the first coating process, when the first surface faces the supporting surface of the carrier plate, part of the first surface is in contact with the supporting surface of the carrier plate, and a gap is formed between the side wall of the substrate device and the inner side wall of the carrier plate, the coating substance generated by the coating source is easy to form a first sub-additional transparent conductive film on the side surface of the substrate device through the gap; in the second coating process, the second surface faces the supporting surface of the carrier plate, part of the second surface is in contact with the supporting surface of the carrier plate, a gap is formed between the side wall of the substrate device and the inner side wall of the carrier plate, and the coating substance generated by the coating source is easy to form a second sub-additional transparent conductive film on the side surface of the substrate device through the gap.
The method for manufacturing a solar cell provided in this embodiment further includes: a number of substrate devices are formed, including a first substrate device through an Nth substrate device.
Referring to fig. 3, the method for removing the additional transparent conductive film includes: providing a clamp 4, wherein the clamp 4 comprises a first clamping plate 401 and a second clamping plate 402 which are oppositely arranged; after forming the first transparent conductive film, the second transparent conductive film and the additional transparent conductive film, stacking first substrate devices to nth substrate devices between the first clamping plate 401 and the second clamping plate 402, wherein the kth substrate device 3 is located on a side surface of the kth +1 substrate device facing away from the second clamping plate 402, N is an integer greater than or equal to 2, preferably, N is an integer between 100 and 400, such as 100, 200, 250, 300, 350 or 400, k is an integer greater than or equal to 1 and less than or equal to N-1, and the first clamping plate 401 and the second clamping plate 402 completely expose the additional transparent conductive film on the side walls of the first substrate devices to the nth substrate devices; after the first through nth substrate devices are stacked between the first clamping plate 401 and the second clamping plate 402, the additional transparent conductive film is removed by an etching process.
It should be noted that the area of the surface of the first clamping plate 401 facing the substrate device is larger than the area of the first surface and larger than the area of the second surface, and the area of the surface of the second clamping plate 402 facing the substrate device is larger than the area of the first surface and larger than the area of the second surface, so that it can be ensured that the first clamping plate 401 and the second clamping plate 402 can completely shield the first transparent conductive film or the second transparent conductive film from being removed in the process of removing the additional transparent conductive film.
The material of the jig 4 includes an aluminum alloy.
Preferably, the additional transparent conductive film is removed by a plasma etching process. After the additional transparent conductive film is removed, the transparent conductive film can be prevented from being conducted with other layer structures without forming 'retraction' of the opposite edge of the transparent conductive film.
Specifically, after a first transparent conductive film, a second transparent conductive film, and an additional transparent conductive film are formed, first to nth substrate devices are stacked between the first clamping plate 401 and the second clamping plate 402, and the additional transparent conductive film is removed by a plasma etching process. The first transparent conductive film and the second transparent conductive film are shielded by the first clamping plate 401, the second clamping plate 402 and the adjacent first transparent conductive film or the adjacent second transparent conductive film, so that the first transparent conductive film and the second transparent conductive film are prevented from being removed in a plasma etching process, the additional transparent conductive films of a plurality of substrate devices are removed simultaneously through the plasma etching process, the removal precision is high, the removal efficiency is high, and the preparation efficiency of the solar cell is improved.
Preferably, in this embodiment, the etching gas in the plasma etching process includes carbon tetrafluoride or methane and a combination thereof with argon or oxygen, wherein:
in the combination containing oxygen, the flow rate of carbon tetrafluoride or methane is 300sccm to 800sccm, the flow rate of oxygen is 40sccm to 300sccm, the pressure of a chamber is 30Pa to 100Pa, and the etching power density is 2400W/m2～8000W/m2The etching time is 5min-25 min. For example in CF4+O2In combination of (A) with (B), CF4And O2At a flow ratio of 8:1, e.g. CF4Set to 400+ sccm, O2Set to 50+ sccm, the cavity control pressure to 40Pa, and the microwave theoretical output power density to 4000W/m2The etching time is set to be 10min, 15min or 20 min.
In the combination containing argon, the flow rate of carbon tetrafluoride or methane is 10sccm to 200sccm, the flow rate of argon is 10sccm to 160sccm, the pressure of a chamber is 30Pa to 100Pa, and the etching power density is 400W/m2～1600W/m2The etching time is 5min-25 min. For example in CH4In the combination of + Ar, CH4At a relatively close flow rate to Ar, e.g. CH4Setting the pressure to be 100+ sccm, setting Ar to be 10+ sccm, setting the cavity control pressure to be 60Pa, and setting the microwave theoretical output power density to be 2400W/m2The etching time is set to be 10min, 15min or 20 min.
In other embodiments, the etching gas may also be sulfur hexafluoride or chlorine, which is not described in this embodiment.
The method for manufacturing a solar cell provided in this embodiment further includes a process of removing the additional transparent conductive film after the first transparent conductive film is formed and/or the second transparent conductive film is formed. The area of the first transparent conductive film covering the first surface of the substrate device is larger, the area of the second transparent conductive film covering the second surface of the substrate device is larger, current carriers in the substrate device can be effectively absorbed and transmitted by the first transparent conductive film and the second transparent conductive film, short-circuit current loss is reduced, photoelectric conversion efficiency of the solar cell is improved, due to the fact that the additional transparent conductive film on the side surface of the substrate device is removed, conduction of the first transparent conductive film and the second transparent conductive film can be avoided, and the area of the first surface and the area of the second surface covering the substrate device are as large as possible or the film forming quality is high.
Through tests, the photoelectric conversion efficiency of the heterojunction cell formed by the preparation method of the solar cell provided by the embodiment is improved by 0.2% -0.4% compared with the photoelectric conversion efficiency of the heterojunction cell formed by the preparation method of the prior art.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A method of fabricating a solar cell, comprising the steps of: providing a substrate device having a first surface and a second surface arranged opposite to each other, and a side surface connecting the first surface and the second surface, characterized by further comprising the steps of:
forming a first transparent conductive film on the first surface;
forming a second transparent conductive film on the second surface;
forming an additional transparent conductive film on at least a part of the side surface in the process of forming the first transparent conductive film and/or forming the second transparent conductive film;
and removing the additional transparent conductive film.
2. The method according to claim 1, wherein the additional transparent conductive film comprises a first sub-additional transparent conductive film and a second sub-additional transparent conductive film;
forming the first sub additional transparent conductive film simultaneously in a process of forming the first transparent conductive film, and forming the second sub additional transparent conductive film simultaneously in a process of forming the second transparent conductive film;
preferably, after the first transparent conductive film is formed, the second transparent conductive film is formed; alternatively, the first transparent conductive film is formed after the second transparent conductive film is formed.
3. The method according to claim 2, wherein the step of forming the first transparent conductive film and the first sub additional transparent conductive film comprises:
providing a carrier plate;
placing the substrate device on a supporting surface of the carrier plate, exposing the first surface, and forming the first transparent conductive film and the first sub-additional transparent conductive film through a first film plating process;
the step of forming the second transparent conductive film and the second sub additional transparent conductive film includes:
and placing the substrate device on the supporting surface of the carrier plate, exposing the second surface, and forming the second transparent conductive film and the second sub-additional transparent conductive film through a second film plating process.
4. The method according to claim 3, wherein the second surface faces the support surface of the carrier plate in the first coating process, and a coating source used in the first coating process is located above the carrier plate;
preferably, the first coating process comprises a physical vapor deposition process.
5. The method according to claim 3, wherein in the first coating process, the first surface faces the supporting surface of the carrier plate, part of the first surface is in contact with the supporting surface of the carrier plate, and a gap is formed between the side wall of the substrate device and the inner side wall of the carrier plate; the coating source adopted in the first coating process is positioned below the carrier plate;
preferably, the first coating process includes a reactive plasma deposition process or a physical vapor deposition process.
6. The method according to claim 3, wherein the first surface faces the support surface of the carrier plate in the second coating process, and a coating source used in the second coating process is located above the carrier plate;
preferably, the second coating process comprises a physical vapor deposition process.
7. The method according to claim 3, wherein in the second coating process, the second surface faces the supporting surface of the carrier plate, a part of the second surface is in contact with the supporting surface of the carrier plate, a gap is formed between the side wall of the substrate device and the inner side wall of the carrier plate, and a coating source used in the second coating process is located below the carrier plate;
preferably, the second coating process includes a reactive plasma deposition process or a physical vapor deposition process.
8. The method of claim 5 or 7, wherein the lateral dimension of the voids is 0.1mm to 0.2 mm.
9. The method of any of claims 1-7, wherein providing a substrate device comprises: forming a plurality of substrate devices, wherein the plurality of substrate devices comprise a first substrate device to an Nth substrate device;
the method for removing the additional transparent conductive film comprises the following steps:
providing a clamp, wherein the clamp comprises a first clamping plate and a second clamping plate which are oppositely arranged;
after the first transparent conductive film, the second transparent conductive film and the additional transparent conductive film are formed, stacking the first substrate device to the Nth substrate device between the first clamping plate and the second clamping plate, wherein the k substrate device is positioned on one side surface of the k +1 th substrate device, which faces away from the second clamping plate, N is an integer greater than or equal to 2, k is an integer greater than or equal to 1 and less than or equal to N-1, and the additional transparent conductive film on the side walls of the first substrate device to the Nth substrate device is completely exposed;
after the first substrate device to the Nth substrate device are stacked between the first clamping plate and the second clamping plate, removing the additional transparent conductive film by adopting an etching process;
preferably, the additional transparent conductive film is removed by a plasma etching process, and an etching gas of the plasma etching process includes carbon tetrafluoride or methane and a combination thereof with argon or oxygen, wherein: in the combination containing oxygen, the flow rate of carbon tetrafluoride or methane is 300sccm to 800sccm, the flow rate of oxygen is 40sccm to 300sccm, the pressure of a chamber is 30Pa to 100Pa, and the etching power density is 2400W/m2～8000W/m2Etching for 5-25 min; in the combination containing argon, the flow rate of carbon tetrafluoride or methane is 10sccm to 200sccm, the flow rate of argon is 10sccm to 160sccm, the pressure of a chamber is 30Pa to 100Pa, and the etching power density is 400W/m2～1600W/m2The etching time is 5min-25 min.
10. The method for manufacturing a solar cell according to any one of claims 3 to 7, wherein the carrier comprises: the carrier plate comprises a carrier plate body, wherein an opening penetrating through the carrier plate body is formed in the carrier plate body; the plurality of spaced protruding support parts are positioned in the opening and are fixedly connected with the carrier plate body; the protruding support is adapted to support a portion of the substrate device;
preferably, the opening is provided with a first inner side wall and a second inner side wall which are oppositely arranged, and the plurality of spaced protruding support parts are fixed with the first inner side wall and the second inner side wall;
preferably, the plurality of spaced protruding supports include a first support, a second support, a third support and a fourth support; the first supporting part and the second supporting part are fixedly connected with the first inner side wall, the third supporting part and the fourth supporting part are fixedly connected with the second inner side wall, the first supporting part and the third supporting part are oppositely arranged, and the second supporting part and the fourth supporting part are oppositely arranged;
preferably, the transverse length of the support part is 0.1 mm-0.7 mm; the transverse width of the supporting part is 0.1 mm-0.7 mm.
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