CN1135569C - 测量带电粒子束分布的方法以及其它相关方法 - Google Patents
测量带电粒子束分布的方法以及其它相关方法 Download PDFInfo
- Publication number
- CN1135569C CN1135569C CNB991109767A CN99110976A CN1135569C CN 1135569 C CN1135569 C CN 1135569C CN B991109767 A CNB991109767 A CN B991109767A CN 99110976 A CN99110976 A CN 99110976A CN 1135569 C CN1135569 C CN 1135569C
- Authority
- CN
- China
- Prior art keywords
- charged particle
- workpiece
- particle beam
- coordinate
- scanning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31703—Dosimetry
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Measurement Of Radiation (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP223587/1998 | 1998-07-22 | ||
JP22358798A JP3567749B2 (ja) | 1998-07-22 | 1998-07-22 | 荷電粒子ビームの分布測定方法およびそれに関連する方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1247986A CN1247986A (zh) | 2000-03-22 |
CN1135569C true CN1135569C (zh) | 2004-01-21 |
Family
ID=16800512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB991109767A Expired - Fee Related CN1135569C (zh) | 1998-07-22 | 1999-07-22 | 测量带电粒子束分布的方法以及其它相关方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6313474B1 (zh) |
EP (1) | EP0975004B1 (zh) |
JP (1) | JP3567749B2 (zh) |
CN (1) | CN1135569C (zh) |
DE (1) | DE69920827T2 (zh) |
TW (1) | TW425578B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102867722A (zh) * | 2011-07-05 | 2013-01-09 | 北京中科信电子装备有限公司 | 一种实时检测离子束剖面密度分布和离子束均匀性分布的装置 |
WO2014040295A1 (zh) * | 2012-09-17 | 2014-03-20 | 北京中科信电子装备有限公司 | 一种实时检测离子束剖面密度分布和离子束均匀性分布的装置 |
CN105159429A (zh) * | 2015-10-10 | 2015-12-16 | 无锡德沃精工设备有限公司 | 一种使用方便电源适配器 |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2339069B (en) * | 1998-07-01 | 2003-03-26 | Applied Materials Inc | Ion implantation beam monitor |
GB2355337B (en) | 1999-10-12 | 2004-04-14 | Applied Materials Inc | Ion implanter and beam stop therefor |
JP3414337B2 (ja) * | 1999-11-12 | 2003-06-09 | 日新電機株式会社 | 電磁界レンズの制御方法およびイオン注入装置 |
US6437350B1 (en) | 2000-08-28 | 2002-08-20 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for adjusting beam parallelism in ion implanters |
US6573518B1 (en) | 2000-10-30 | 2003-06-03 | Varian Semiconductor Equipment Associates, Inc. | Bi mode ion implantation with non-parallel ion beams |
US7323700B1 (en) | 2001-04-02 | 2008-01-29 | Applied Materials, Inc. | Method and system for controlling beam scanning in an ion implantation device |
US7257467B2 (en) | 2001-11-02 | 2007-08-14 | Hagenbuch Leroy G | Method of estimating the volumetric carrying capacity of a truck body |
KR100444201B1 (ko) * | 2002-04-18 | 2004-08-16 | 삼성전자주식회사 | 이온빔 경사각 측정방법 및 장치 |
US7189980B2 (en) * | 2003-05-09 | 2007-03-13 | Varian Semiconductor Equipment Associates, Inc. | Methods and systems for optimizing ion implantation uniformity control |
GB2409926B (en) * | 2004-01-06 | 2006-11-29 | Applied Materials Inc | Ion beam monitoring arrangement |
JP4251453B2 (ja) * | 2004-02-23 | 2009-04-08 | 日新イオン機器株式会社 | イオン注入方法 |
US6992308B2 (en) * | 2004-02-27 | 2006-01-31 | Axcelis Technologies, Inc. | Modulating ion beam current |
US7442944B2 (en) * | 2004-10-07 | 2008-10-28 | Varian Semiconductor Equipment Associates, Inc. | Ion beam implant current, spot width and position tuning |
US7109499B2 (en) | 2004-11-05 | 2006-09-19 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and methods for two-dimensional ion beam profiling |
US7064340B1 (en) * | 2004-12-15 | 2006-06-20 | Axcelis Technologies, Inc. | Method and apparatus for ion beam profiling |
JP4561690B2 (ja) * | 2005-05-24 | 2010-10-13 | 日新イオン機器株式会社 | イオンビーム計測方法およびイオン注入装置 |
US7385208B2 (en) * | 2005-07-07 | 2008-06-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods for implant dosage control |
US7462844B2 (en) * | 2005-09-30 | 2008-12-09 | Varian Semiconductor Equipment Associates, Inc. | Method, system, and apparatus for improving doping uniformity in high-tilt ion implantation |
US7361914B2 (en) | 2005-11-30 | 2008-04-22 | Axcelis Technologies, Inc. | Means to establish orientation of ion beam to wafer and correct angle errors |
JP4600426B2 (ja) * | 2006-06-26 | 2010-12-15 | 日新イオン機器株式会社 | イオン注入装置およびイオンビームの偏差角補正方法 |
JP5018938B2 (ja) * | 2006-06-26 | 2012-09-05 | 日新イオン機器株式会社 | イオン注入装置 |
US7888652B2 (en) | 2006-11-27 | 2011-02-15 | Nissin Ion Equipment Co., Ltd. | Ion implantation apparatus |
JP2008176984A (ja) | 2007-01-17 | 2008-07-31 | Hitachi High-Technologies Corp | イオンビーム加工装置 |
JP2008235044A (ja) * | 2007-03-22 | 2008-10-02 | Ihi Corp | ビームプロファイルモニター |
WO2009039884A1 (en) * | 2007-09-26 | 2009-04-02 | Ion Beam Applications S.A. | Particle beam transport apparatus and method of transporting a particle beam with small beam spot size |
US8071964B2 (en) * | 2008-05-01 | 2011-12-06 | Axcelis Technologies, Inc. | System and method of performing uniform dose implantation under adverse conditions |
US9443698B2 (en) * | 2008-10-06 | 2016-09-13 | Axcelis Technologies, Inc. | Hybrid scanning for ion implantation |
US8080814B2 (en) * | 2010-03-04 | 2011-12-20 | Axcelis Technologies Inc. | Method for improving implant uniformity during photoresist outgassing |
JP5670126B2 (ja) * | 2010-08-26 | 2015-02-18 | 住友重機械工業株式会社 | 荷電粒子線照射装置、荷電粒子線照射方法及び荷電粒子線照射プログラム |
FR2968393B1 (fr) * | 2010-12-07 | 2015-03-06 | Techniques Metallurgiques Avancees Techmeta | Dispositif et procede pour analyser la densite d'un faisceau de particules chargees. |
JP5638995B2 (ja) * | 2011-03-28 | 2014-12-10 | 株式会社Sen | イオン注入方法及びイオン注入装置 |
CN102956424A (zh) * | 2011-08-22 | 2013-03-06 | 北京中科信电子装备有限公司 | 一种蜂窝式束流均匀性检测装置 |
CN102435128B (zh) * | 2011-09-01 | 2013-11-13 | 上海显恒光电科技股份有限公司 | 设有双法拉第筒的电子束束斑尺寸测量装置及其测量方法 |
JP6184793B2 (ja) * | 2013-07-31 | 2017-08-23 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
CN104679919B (zh) * | 2013-11-27 | 2018-09-04 | 南京理工大学 | 计算微波谐振电路时域响应的外推方法 |
US9111719B1 (en) * | 2014-01-30 | 2015-08-18 | Axcelis Technologies, Inc. | Method for enhancing beam utilization in a scanned beam ion implanter |
CN103837883A (zh) * | 2014-02-19 | 2014-06-04 | 中国科学院等离子体物理研究所 | 兆瓦级离子源功率密度分布的测量方法 |
JP6195538B2 (ja) * | 2014-04-25 | 2017-09-13 | 住友重機械イオンテクノロジー株式会社 | イオン注入方法及びイオン注入装置 |
CN105081926A (zh) * | 2015-08-26 | 2015-11-25 | 成都森蓝光学仪器有限公司 | 离子束抛光离子源坐标位置标校系统和标校方法 |
CN105575748B (zh) * | 2015-12-11 | 2017-11-21 | 中国电子科技集团公司第四十八研究所 | 一种提高大口径离子源离子束流均匀性的方法 |
US10395889B2 (en) * | 2016-09-07 | 2019-08-27 | Axcelis Technologies, Inc. | In situ beam current monitoring and control in scanned ion implantation systems |
US10553392B1 (en) * | 2018-12-13 | 2020-02-04 | Axcelis Technologies, Inc. | Scan and corrector magnet designs for high throughput scanned beam ion implanter |
CN111769026B (zh) * | 2019-04-02 | 2024-03-12 | 北京中科信电子装备有限公司 | 一种束流性质测量装置及方法 |
CN111308542B (zh) * | 2020-02-28 | 2021-12-21 | 中国科学院电工研究所 | 一种电子枪束斑性能的测量装置及测量方法 |
CN112578426B (zh) * | 2020-11-26 | 2022-09-20 | 中国工程物理研究院应用电子学研究所 | 一种可调节型阵列式法拉第筒 |
CN114088036B (zh) * | 2021-11-12 | 2024-04-12 | 长沙埃福思科技有限公司 | 定位工件坐标的离子束抛光机及定位工件坐标的方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH077658B2 (ja) | 1989-05-15 | 1995-01-30 | 日新電機株式会社 | イオン注入装置 |
JP2969788B2 (ja) * | 1990-05-17 | 1999-11-02 | 日新電機株式会社 | イオンビームの平行度測定方法、走査波形整形方法およびイオン注入装置 |
JP2625292B2 (ja) | 1991-09-27 | 1997-07-02 | 日新電機株式会社 | イオン注入均一性予測方法 |
-
1998
- 1998-07-22 JP JP22358798A patent/JP3567749B2/ja not_active Expired - Lifetime
-
1999
- 1999-07-21 DE DE69920827T patent/DE69920827T2/de not_active Expired - Fee Related
- 1999-07-21 EP EP99114152A patent/EP0975004B1/en not_active Expired - Lifetime
- 1999-07-21 US US09/357,938 patent/US6313474B1/en not_active Expired - Lifetime
- 1999-07-22 TW TW088112433A patent/TW425578B/zh not_active IP Right Cessation
- 1999-07-22 CN CNB991109767A patent/CN1135569C/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102867722A (zh) * | 2011-07-05 | 2013-01-09 | 北京中科信电子装备有限公司 | 一种实时检测离子束剖面密度分布和离子束均匀性分布的装置 |
CN102867722B (zh) * | 2011-07-05 | 2016-04-06 | 北京中科信电子装备有限公司 | 一种实时检测离子束剖面密度分布和离子束均匀性分布的装置 |
WO2014040295A1 (zh) * | 2012-09-17 | 2014-03-20 | 北京中科信电子装备有限公司 | 一种实时检测离子束剖面密度分布和离子束均匀性分布的装置 |
CN105159429A (zh) * | 2015-10-10 | 2015-12-16 | 无锡德沃精工设备有限公司 | 一种使用方便电源适配器 |
Also Published As
Publication number | Publication date |
---|---|
DE69920827D1 (de) | 2004-11-11 |
DE69920827T2 (de) | 2005-02-24 |
EP0975004A2 (en) | 2000-01-26 |
EP0975004B1 (en) | 2004-10-06 |
EP0975004A3 (en) | 2001-03-21 |
JP2000039478A (ja) | 2000-02-08 |
TW425578B (en) | 2001-03-11 |
US6313474B1 (en) | 2001-11-06 |
CN1247986A (zh) | 2000-03-22 |
JP3567749B2 (ja) | 2004-09-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1135569C (zh) | 测量带电粒子束分布的方法以及其它相关方法 | |
CN1256752C (zh) | 控制静电透镜的方法和离子注入装置 | |
KR100722159B1 (ko) | 이온주입방법 및 그 장치 | |
CN1691269A (zh) | 衬底注入方法以及实施该方法的离子注入器 | |
CN105023822B (zh) | 离子注入方法以及离子注入装置 | |
JP5354418B2 (ja) | イオンビーム走査の制御方法並びにイオン注入の均一化のためのシステム | |
KR101781644B1 (ko) | 이온빔 스캔처리장치 및 이온빔 스캔처리방법 | |
CN101061563B (zh) | 经改进的扫描离子注入期间的离子束利用 | |
CN1700402A (zh) | 离子注入装置 | |
CN101065823A (zh) | 受控剂量离子注入 | |
CN100338720C (zh) | 用于离子注入的混合扫描系统及方法 | |
CN101080802A (zh) | 用于离子束聚焦的系统和方法 | |
CN1134819C (zh) | 离子注入方法和离子注入设备 | |
CN103582927A (zh) | 利用动态束成形进行改善均匀度控制的方法和装置 | |
CN1851867A (zh) | 一种离子注入均匀性控制系统及控制方法 | |
US7935946B2 (en) | Ion implantation method and apparatus | |
CN106233418B (zh) | 使用角能量过滤器的角扫描 | |
CN1195882A (zh) | 离子注入方法及装置 | |
CN101009191A (zh) | 具有可变筛孔的离子注入系统及使用其的离子注入方法 | |
JP5904998B2 (ja) | ビームがスキャンされるイオン注入装置における処理量の増大 | |
US7935945B2 (en) | Ion implantation method and apparatus | |
CN1575503A (zh) | 用于离子注入的方法和装置 | |
CN1647236A (zh) | 衬底注入方法以及实施该方法的离子注入器 | |
CN1866461A (zh) | 一种离子束传输控制优化方法 | |
CN1182280A (zh) | 采用带电粒子束的图形绘制方法及其装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NISHIN MOTORS CO LTD Free format text: FORMER OWNER: NISHIN DENKI CO., LTD. Effective date: 20060414 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20060414 Address after: Kyoto City, Kyoto, Japan Patentee after: Nishin Ion Equipment Co., Ltd. Address before: Kyoto Japan Patentee before: Nissin Electric Co., Ltd. |
|
C56 | Change in the name or address of the patentee |
Owner name: NISSIN ION EQUIPMENT CO LTD Free format text: FORMER NAME OR ADDRESS: NISHIN MOTORS CO LTD |
|
CP03 | Change of name, title or address |
Address after: Kyoto City, Kyoto, Japan Patentee after: Nissin Ion Equipment Co., Ltd. Address before: Kyoto City, Kyoto, Japan Patentee before: Nishin Ion Equipment Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040121 Termination date: 20140722 |
|
EXPY | Termination of patent right or utility model |