CN113552737A - Test method suitable for TFT-LCD single screen test photoelectric parameter - Google Patents
Test method suitable for TFT-LCD single screen test photoelectric parameter Download PDFInfo
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- CN113552737A CN113552737A CN202110652743.7A CN202110652743A CN113552737A CN 113552737 A CN113552737 A CN 113552737A CN 202110652743 A CN202110652743 A CN 202110652743A CN 113552737 A CN113552737 A CN 113552737A
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- 238000012360 testing method Methods 0.000 title claims abstract description 81
- 238000010998 test method Methods 0.000 title claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 24
- 239000000523 sample Substances 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 230000000052 comparative effect Effects 0.000 description 17
- 238000002834 transmittance Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000013499 data model Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 241001270131 Agaricus moelleri Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
Abstract
The invention relates to a test method suitable for testing photoelectric parameters of a TFT-LCD single screen, wherein test points GATE, VCOM and VGG of the TFT-LCD single screen are connected with an electric testing clamp through metal wires or metal probes; the electric measuring clamp is used for inputting test voltages with different waveforms to the GATE, VCOM, VGG and SOURCE ICs.
Description
Technical Field
The invention relates to the field of LCD (liquid crystal display) testing, in particular to a testing method suitable for testing photoelectric parameters of a TFT-LCD single screen.
Background
The photoelectric parameters obtained by the TFT-LCD single screen test at least comprise a voltage-brightness curve, a response speed curve and transmittance of a single screen, and the technical scheme of the existing TFT-LCD single screen test is as follows: the electric measuring clamp is electrically connected with the test points (GATE, VCOM, Data R, Data G, Data B and VGG) of the TFT-LCD single screen through metal wires or metal probes, and different voltages are input to the test points of the TFT-LCD single screen through the electric measuring clamp to test photoelectric parameters.
But the technical problems in the prior art are as follows: when the TFT-LCD single screen tests photoelectric parameters, the triode effect of the VGG layer of the test point can influence the voltage waveform input on the metal wire or the metal probe.
Disclosure of Invention
Aiming at the technical problems in the prior art, the invention provides a testing method suitable for testing photoelectric parameters of a TFT-LCD single screen, which can shield the influence of a triode on which a VGG layer is positioned on the photoelectric parameters of the TFT-LCD single screen.
In order to achieve the purpose, the invention adopts the following technical scheme: a testing method for testing photoelectric parameters of a TFT-LCD single screen comprises the following steps: connecting the test points GATE, VCOM and VGG of the TFT-LCD single screen with an electrical measuring clamp through metal wires or metal probes, and connecting the conductive coating with the electrical measuring clamp through the metal wires or the metal probes after the conductive coating is coated on the SOURCE IC binding positions.
In one embodiment, the metal coating is a metallic tin layer.
TFT-LCD single-screen test of electro-optical parameters is performed by inputting test voltages of different waveforms to GATE, VCOM, VGG and SOURCE ICs through electrical test fixtures.
Compared with the prior art, the technical scheme of the invention has at least the following beneficial effects:
1. the test method provided by the invention only relates to the test points GATE, VCOM, VGG and SOURCE IC of the TFT-LCD single screen, compared with the prior art, the test method reduces the test points required to be connected and reduces the test difficulty;
2. the testing method provided by the invention can shield the influence of the VGG triode effect on the input voltage waveform, and obviously improves the testing precision and accuracy of the TFT-LCD single screen testing photoelectric parameters.
The following description will be given with reference to specific examples.
Drawings
The figures further illustrate the invention, but the examples in the figures do not constitute any limitation of the invention.
FIG. 1 is a schematic diagram of the connection of test points for testing the photoelectric parameters of a TFT-LCD single screen provided in a comparative example.
FIG. 2 is a circuit diagram of a TFT-LCD single screen test of electro-optical parameters provided in the comparative example.
Fig. 3 is a schematic diagram of connection between test points for testing optical parameters of a TFT-LCD single screen provided in embodiment 1.
Fig. 4 is a circuit diagram for testing the optical electrical parameters of the TFT-LCD single screen provided in example 1.
Fig. 5 is a graph of voltage versus transmittance.
Fig. 6 is a graph of voltage versus transmittance.
Fig. 7 is a response speed graph.
Fig. 8 is a response speed graph.
Fig. 9 is a Gamma graph.
Wherein the reference numerals are: 1, TFT-LED single screen; GATE; VCOM; data R; data G; data B; VGG; SOURCE IC; 21. a first MOS transistor; 22. and a second MOS transistor.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The specific structure of the TFT-LCD single screen described in the comparative example and example 1 is the same as that of the conventional TFT-LCD display, and the TFT-LCD single screen is switched by a Thin Film Transistor (TFT) and controls the input of a data signal to display a picture. The main structure of the TFT-LCD single screen includes an Array (Array) substrate, a Color Filter (CF) substrate, and a liquid crystal layer located between the Array substrate and the Color Filter substrate, wherein the Array substrate is a driving panel of a liquid crystal display panel, and includes a TFT device and various signals. The specific structure and preparation method of the TFT-LCD single screen described in the comparative example and example 1 are the same.
In comparative example and example 1, the triode in which the VGG layer is located includes a first MOS transistor 21 and a second MOS transistor 22.
Comparative examples
In this embodiment, the existing technical method is adopted for testing the photoelectric parameters of the TFT-LCD single screen 1, as shown in fig. 1, when the TFT-LCD single screen 1 tests the photoelectric parameters, the test points of the TFT-LCD single screen 1 include GATE 11, VCOM 12, Data R13, Data G14, Data B15, and VGG 16, the corresponding connection points on the electrical testing fixture are respectively connected with the test points one by one through metal wires or metal probes, and different voltages are input to the test points of the TFT-LCD single screen 1 through the electrical testing fixture to test the photoelectric parameters. .
In the present embodiment, the electrical test fixture employs the equipment for TFT-LCD single screen testing as disclosed in the prior art.
When the TFT-LCD single screen 1 is used for testing photoelectric parameters, an equivalent circuit of each basic display unit Pixel point of the TFT-LCD is shown as a Pixel marked in fig. 2, the TFT-LCD single screen adopts an active matrix driving mode, that is, a Source electrode (corresponding to Source in fig. 2) in the Pixel is responsible for transmission of data models, a Gate electrode (corresponding to Gate in fig. 2) in the Pixel is responsible for transmission of scanning signals, and display of different gray scales is realized by controlling a deflection angle of a liquid crystal layer. The IC responsible for the SOURCE data model transmission in Pixel is SOURCE IC, which adopts cof (chip on film) packaging mode, i.e. SOURCE IC is pressed together with TFT PAD by ACF (anisotropic conductive adhesive).
As shown in FIG. 2, when the TFT-LCD single screen 1 is used for testing photoelectric parameters, VGG 16 is respectively connected with the grid electrode of the first MOS tube 21 and the grid electrode of the second MOS tube 22, DATA (including DATA R, DATA G and DATA B) is connected with the drain electrode of the first MOS tube 21, GATE 11 is connected with the drain electrode of the second MOS tube 22, the Source electrode of the first MOS tube 21 is connected with Source in Pixel, and the Source electrode of the second MOS tube 22 is connected with Gate in Pixel. In order to prevent the single screen of the existing TFT-LCD from being affected by the voltage of the test point after the IC and the FPC are bonded to the screen, the VGG 16 is provided, the VGG 16 plays a role in controlling the switch of the first MOS transistor 21 and the switch of the second MOS transistor 22, when the VGG 16 reaches the operating voltage, the voltage can be input to the Pixel through the DATA and the GATE 11, and when the IC and the FPC bonded to the screen normally operate, the VGG 16 reduces the voltage, so that the first MOS transistor 21 and the second MOS transistor 22 are both in the off state, and at this time, the voltage input through the DATA and the GATE 11 cannot pass through.
However, when the prior art is adopted to test the photoelectric parameters of the TFT-LCD single screen, the VGG has the voltage drop characteristic, and can affect the voltage waveform input on the metal wire or the metal probe, thereby affecting the precision and accuracy of the TFT-LCD single screen photoelectric parameter test.
Example 1
As shown in fig. 3, in the present embodiment, when testing the electro-optical parameters for the TFT-LCD single screen 1, the test points of the TFT-LCD single screen 1 include GATE 11, VCOM 12, and VGG 16, the test points are respectively connected with the electrical testing fixture through the metal wire or the metal probe, and the solder layer is connected with the electrical testing fixture through the metal wire or the metal probe after the solder layer is coated on the bonding site of the SOURCE IC 17.
The electrical measuring clamp described in this embodiment and the electrical measuring clamp described in the comparative embodiment can both realize the function of voltage waveform input. The testing method for testing the photoelectric parameters of the TFT-LCD single screen provided by the embodiment reduces the testing difficulty by reducing the testing points, and can shield the influence of the triode effect of the VGG layer during testing the photoelectric parameters.
When the TFT-LCD single screen tests photoelectric parameters, the equivalent circuit of each basic display unit Pixel point of the TFT-LCD is shown as Pixel marked in figure 4. As shown in FIG. 4, when the TFT-LCD single screen 1 is used for testing photoelectric parameters, the VGG 16 is connected with the grid of the second MOS tube 22, the GATE 11 is connected with the drain of the second MOS tube 22, the SOURCE of the second MOS tube 22 is connected with the GATE of the Pixel, and the SOURCE IC 17 is directly connected with the Pixel. The testing method provided by the embodiment directly inputs voltage to the Pixel through the SOURCE IC, so that the influence of the triode effect of the VGG layer on the TFT-LCD single screen testing photoelectric parameters can be shielded.
Comparative test
The test method provided by the comparative example and the test method provided by the example 1 are respectively adopted to test the photoelectric parameters of the same TFT-LCD single screen, the voltage waveforms input to the TFT-LCD single screen through the electric test fixture when the same photoelectric parameters are tested by the two methods are the same, and the following photoelectric parameters are specifically tested by adopting the two test methods:
1. as shown in fig. 5, the voltage-transmittance curve (VT curve) of the TFT-LCD single screen is tested by inputting a voltage of 60HZ, and as a result, it is found that the VT curve (corresponding to curve b in fig. 5) obtained by the test method provided in example 1 is compared with the VT curve (corresponding to curve a in fig. 5) obtained by the test method provided in the comparative example: the VT curve obtained by the test method provided in example 1 has a smaller voltage at the same transmittance, and the VT curve obtained by the test method provided in the comparative example shifts to the right;
2. as shown in fig. 6, when a voltage of 100HZ is input to the TFT-LCD single screen to test a voltage-transmittance curve (VT curve), comparing fig. 6 with fig. 5, it is found that the VT curve (corresponding to curve d in fig. 6) obtained by the test method provided in example 1 does not change with the frequency of the input voltage, while the VT curve (corresponding to curve c in fig. 6) obtained by the test method provided in the comparative example drifts to the left with the frequency of the input voltage decreasing;
3. as shown in fig. 7, the response speed curve obtained by the test method provided in example 1 (corresponding to b in fig. 7) is smoother and faster than the response speed curve obtained by the test method provided in comparative example (corresponding to a in fig. 7) in the response speed curve obtained by the test method provided in example 1 under the same input voltage condition;
4. as a result of testing a response speed curve by inputting a square wave voltage of ± 5.3V having a frequency of 100HZ to a TFT-LCD single screen, as shown in fig. 8, it was found that 3 relative brightness decays and then rises when the brightness rises to more than 90% during the response speed curve (corresponding to c in fig. 8) obtained by the test method provided in the comparative example, compared to the response speed curve (corresponding to d in fig. 8) obtained by the test method provided in example 1, and through time comparison, the brightness ramp time gaps T1, T2, and T3 correspond to the input frequency of 100HZ, which proved that the relative brightness of the TFT-LCD single screen slightly changes when the polarity of the input frequency is reversed when the test method provided in the comparative example is used, and the relative brightness ramp time is prolonged, and then, as shown by comparing fig. 7 with fig. 8, it was proved that the frequency of the input signal affects the brightness when the brightness is raised when the test method provided in the comparative example is used for testing The steeper the occurrence and the smaller the frequency of the input voltage, the longer the time gap T1 of the steeper, the less delay effect on the relative brightness rise. Comparing fig. 7 and 8, it was also found that the response speed time was not affected by the frequency of the input voltage when tested using the test method provided in example 1;
5. as a result of obtaining the gamma curve by adjusting the voltage-transmittance curve, as shown in fig. 9, it can be found that the gamma curve (corresponding to a in fig. 9) obtained by adjusting the voltage-luminance curve data obtained by the test method provided in the comparative example shifts upward compared with the gamma 2.2 standard curve, and the gamma curve (corresponding to b in fig. 9) obtained by adjusting the voltage-luminance curve data obtained by the test method provided in example 1 more closely resembles the gamma 2.2 standard curve.
Through the comparison test, it can be determined that the test method suitable for testing the photoelectric parameters of the TFT-LCD single screen provided in embodiment 1 can improve the test accuracy and the test result is less susceptible to the frequency change of the input voltage, compared with the existing test method.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (2)
1. A test method suitable for TFT-LCD single screen test photoelectric parameter is characterized in that: the testing points GATE, VCOM and VGG of the TFT-LCD single screen are connected with an electrical testing clamp through metal wires or metal probes, and after a conductive coating is coated on a SOURCE IC binding position of the TFT-LCD single screen, the conductive coating is connected with the electrical testing clamp through the metal wires or the metal probes; the electrical test fixture is used to input test voltages of different waveforms to the GATE, VCOM, VGG, and SOURCE IC.
2. The test method of claim 1, wherein: the metal coating is a metallic tin layer.
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