CN113541116B - Voltage clamping circuit and system based on power MOS - Google Patents
Voltage clamping circuit and system based on power MOS Download PDFInfo
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- CN113541116B CN113541116B CN202110887651.7A CN202110887651A CN113541116B CN 113541116 B CN113541116 B CN 113541116B CN 202110887651 A CN202110887651 A CN 202110887651A CN 113541116 B CN113541116 B CN 113541116B
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- 238000002955 isolation Methods 0.000 claims abstract description 22
- 230000002457 bidirectional effect Effects 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 3
- 230000000087 stabilizing effect Effects 0.000 claims description 3
- 230000001052 transient effect Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000001629 suppression Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B64—AIRCRAFT; AVIATION; COSMONAUTICS
- B64G—COSMONAUTICS; VEHICLES OR EQUIPMENT THEREFOR
- B64G1/00—Cosmonautic vehicles
- B64G1/22—Parts of, or equipment specially adapted for fitting in or to, cosmonautic vehicles
- B64G1/40—Arrangements or adaptations of propulsion systems
- B64G1/405—Ion or plasma engines
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Remote Sensing (AREA)
- Aviation & Aerospace Engineering (AREA)
- Electronic Switches (AREA)
Abstract
The invention discloses a voltage clamping circuit and a system based on power MOS, wherein the voltage clamping circuit comprises: the isolation diode D5, the MOS tube Q3 and the control circuit; the isolation diode D5 is connected with the MOS tube Q3 in series; the control circuit is connected with the isolation diode D5 and the MOS tube Q3 which are connected in series and connected with the network A and the network B in parallel; wherein, the high end of the control circuit connects with the network A, the low end of the control circuit connects with the network B; the anode of the isolation diode D5 is connected with the network A, and the S electrode of the MOS tube Q3 is connected with the network B. The invention solves the problem that the transient diode cannot bear the energy impact in the Hall electric propulsion ignition process to burn out.
Description
Technical Field
The invention belongs to the technical field of Hall electric propulsion systems, and particularly relates to a voltage clamping circuit and a system based on a power MOS.
Background
In a Hall electric propulsion system, because the output of a power supply processing unit (PPU) is high voltage, the PPU output high-voltage ground and a star must be isolated in order to ensure the safety of the whole star; meanwhile, in order to avoid the damage of the PPU to the whole star safety caused by the space charge accumulation generated by floating, a clamping circuit is generally required to be arranged between the high-voltage ground and the structural ground (star ground).
In order to realize clamping, the common practice is to adopt a transient suppression diode, and when the floating voltage of the high-voltage ground relative to the star ground is accumulated to a set clamping voltage point, the clamping diode rapidly discharges accumulated charges in a short time, so that the safety of high-voltage products and the star is ensured.
However, for an electric propulsion system, a non-electric neutralization working condition may occur in the high-energy ions ejected by the thruster at the moment of ignition of the PPU and the thruster, so that a current with a voltage of up to 200V, a current of tens of amperes and a duration of hundreds of ms occurs between the vacuum cabin and the high-voltage ground, and the transient suppression diode cannot bear instantaneous impact to burn.
Disclosure of Invention
The technical solution of the invention is as follows: the voltage clamping circuit and the system based on the power MOS are provided for overcoming the defects of the prior art, and the problem that a transient diode cannot bear energy impact in the Hall electric propulsion ignition process to burn is solved.
In order to solve the technical problems, the invention discloses a voltage clamping circuit based on a power MOS, which comprises the following components: the isolation diode D5, the MOS tube Q3 and the control circuit;
the isolation diode D5 is connected with the MOS tube Q3 in series; the cathode of the isolation diode D5 is connected with the D pole of the MOS transistor Q3;
the control circuit is connected with the isolation diode D5 and the MOS tube Q3 which are connected in series and connected with the network A and the network B in parallel; wherein, the high end of the control circuit connects with the network A, the low end connects with the network B; the anode of the isolation diode D5 is connected with the network A, and the S electrode of the MOS tube Q3 is connected with the network B.
In the voltage clamping circuit based on the power MOS, the control circuit is used for controlling the on and off of the MOS transistor Q3 according to the voltage signal of the clamped network so as to realize clamping.
In the above voltage clamping circuit based on a power MOS, the control circuit includes: resistor R1, resistor R2, resistor R3, resistor R4, resistor R5, zener diode D1, diode D2, zener diode D3, diode D4, transistor Q1 and transistor Q2;
the diode D4 is the high end of the control circuit, and the cathode of the diode D4 is respectively connected with the cathode of the zener diode D1, one end of the resistor R3 and one end of the resistor R4;
the anode of the voltage stabilizing diode D1 is connected with one end of a resistor R1, and the other end of the resistor R1 is respectively connected with one end of a resistor R2, the cathode of the diode D2 and the base electrode of a triode Q1;
the other end of the resistor R3 is connected with the collector electrode of the triode Q1 and the base electrode of the triode Q2;
the other end of the resistor R4, the cathode of the zener diode D3, the drain electrode of the triode Q2 and one end of the resistor R5 are connected with the control end of the control circuit;
the anode of the zener diode D3 is connected with the anode of the diode D2;
the other end of the resistor R2, the emitter of the triode Q1, the emitter of the triode Q2 and the other end of the resistor R5 are connected with the low end of the control circuit.
In the voltage clamping circuit based on the power MOS, when the control circuit controls the on and off of the MOS transistor Q3 according to the voltage signal of the clamped network to realize clamping, the voltage clamping circuit includes:
when V is AB ＜V Threshold value When the diode D1 is controlled to be cut off, the triode Q1 is controlled to be cut off; voltage V AB The base electrode of the triode Q2 is powered by a diode D4 and a resistor R3; the triode Q2 is conducted, so that the GS voltage of the MOS tube Q3 is lower than the conducting voltage of the MOS tube Q3, and the MOS tube Q3 is cut off; wherein V is Threshold value Representing the set clamping voltage; v (V) AB Representing the voltage between network a and network B, i.e. the voltage of the clamped network.
In the voltage clamping circuit based on the power MOS, when the control circuit controls the on and off of the MOS transistor Q3 according to the voltage signal of the clamped network to implement clamping, the voltage clamping circuit further includes:
when V is AB ≥V Threshold value Control diodeD1 is turned on, voltage V AB The base electrode of the triode Q1 is supplied with power through a diode D4, a diode D1 and a resistor R1; the triode Q1 is conducted, so that the base voltage of the triode Q2 is lower than the conducting voltage of the triode Q2, and the triode Q2 is cut off; voltage V AB The base electrode of the triode Q1 is supplied with power after passing through the diode D4, the resistor R4, the diode D3 and the diode D2 so as to maintain the conduction of the triode Q1 and the cut-off of the triode Q2, and meanwhile, the voltage V AB The G pole of the MOS tube Q3 is powered through the diode D4, the resistor R4 and the resistor R5, and the MOS tube Q3 is conducted; voltage V AB Discharging through diode D5 and MOS tube Q3, and decreasing voltage value until voltage V AB The voltage value of (2) is reduced until the conduction of the MOS transistor Q3 can not be maintained, so as to obtain a voltage V AB Limited to the set clamping voltage.
In the above-described voltage clamping circuit based on the power MOS, the isolation diode D5 is used to limit the flow direction of the current.
In the voltage clamping circuit based on the power MOS, the MOS transistor Q3 is used for switching on or switching off a clamped network under the control of the control circuit.
Correspondingly, the invention also discloses a voltage clamping system based on the power MOS, which comprises the following steps: two sets of voltage clamping circuits such as power MOS-based;
two sets of voltage clamping circuits based on power MOS are combined in anti-parallel to realize bidirectional clamping;
or alternatively, the first and second heat exchangers may be,
the two sets of voltage clamping circuits based on the power MOS are connected in series and redundantly combined to improve the reliability.
The invention has the following advantages:
the invention discloses a voltage clamping circuit based on a power MOS, which is characterized in that a control circuit detects a clamped voltage signal and generates a clamping control signal to drive the on and off of a MOS tube Q3 to realize clamping after comparing the voltage signal with a set clamping voltage: when the voltage at two ends of the clamping network is lower than the set clamping voltage, the clamping circuit does not clamp. When the voltage at two ends of the clamping network is higher than the set clamping voltage, the control circuit generates a clamping signal to drive the MOS tube Q3 to be conducted, so that the energy at two ends of the clamping network is quickly released, the voltage at two ends of the clamping network is reduced to a safe range, the purpose of clamping is achieved, and the problem that the transient diode cannot bear energy impact in the Hall electric propulsion ignition process to burn is solved.
Drawings
Fig. 1 is a schematic circuit diagram of a voltage clamping circuit based on a power MOS according to an embodiment of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the embodiments of the present invention disclosed herein will be described in further detail with reference to the accompanying drawings.
As shown in fig. 1, in the present embodiment, the power MOS-based voltage clamping circuit includes: the isolation diode D5, the MOS tube Q3 and the control circuit. Specific: the isolation diode D5 is connected with the MOS tube Q3 in series, and the control circuit is connected with the isolation diode D5 and the MOS tube Q3 which are connected in series and connected with the network A and the network B in parallel. The cathode of the isolation diode D5 is connected with the D pole of the MOS transistor Q3; a high-end network A of the control circuit and a low-end network B of the control circuit; the anode of the isolation diode D5 is connected with the network A, and the S electrode of the MOS tube Q3 is connected with the network B.
In this embodiment, the control circuit is mainly used for: and controlling the on and off of the MOS transistor Q3 according to the voltage signal of the clamped network so as to realize clamping. As shown in fig. 1, the control circuit may specifically include: resistor R1, resistor R2, resistor R3, resistor R4, resistor R5, zener diode D1, diode D2, zener diode D3, diode D4, transistor Q1 and transistor Q2. The diode D4 is a high end of the control circuit, and the cathode of the diode D4 is respectively connected with the cathode of the zener diode D1, one end of the resistor R3 and one end of the resistor R4; the anode of the voltage stabilizing diode D1 is connected with one end of a resistor R1, and the other end of the resistor R1 is respectively connected with one end of a resistor R2, the cathode of the diode D2 and the base electrode of a triode Q1; the other end of the resistor R3 is connected with the collector electrode of the triode Q1 and the base electrode of the triode Q2; the other end of the resistor R4, the cathode of the zener diode D3, the drain electrode of the triode Q2 and one end of the resistor R5 are connected with the control end of the control circuit; the anode of the zener diode D3 is connected with the anode of the diode D2; the other end of the resistor R2, the emitter of the triode Q1, the emitter of the triode Q2 and the other end of the resistor R5 are connected with the low end of the control circuit.
In this embodiment, when the control circuit controls the on/off of the MOS transistor Q3 according to the voltage signal of the clamped network, the following is specifically implemented:
when V is AB ＜V Threshold value When the diode D1 is controlled to be cut off, the triode Q1 is controlled to be cut off; voltage V AB The base electrode of the triode Q2 is powered by a diode D4 and a resistor R3; the transistor Q2 is turned on to make the GS voltage of the MOS transistor Q3 lower than the turn-on voltage of the MOS transistor Q3, and the MOS transistor Q3 is turned off. Wherein V is Threshold value Representing the set clamping voltage; v (V) AB Representing the voltage between network a and network B, i.e. the voltage of the clamped network.
When V is AB ≥V Threshold value In the time, the diode D1 is controlled to be turned on, the voltage V AB The base electrode of the triode Q1 is supplied with power through a diode D4, a diode D1 and a resistor R1; the triode Q1 is conducted, so that the base voltage of the triode Q2 is lower than the conducting voltage of the triode Q2, and the triode Q2 is cut off; voltage V AB The base electrode of the triode Q1 is supplied with power after passing through the diode D4, the resistor R4, the diode D3 and the diode D2 so as to maintain the conduction of the triode Q1 and the cut-off of the triode Q2, and meanwhile, the voltage V AB The G pole of the MOS tube Q3 is powered through the diode D4, the resistor R4 and the resistor R5, and the MOS tube Q3 is conducted; voltage V AB Discharging through diode D5 and MOS tube Q3, and decreasing voltage value until voltage V AB The voltage value of (2) is reduced until the conduction of the MOS transistor Q3 can not be maintained, so as to obtain a voltage V AB Limited to the set clamping voltage.
In the present embodiment, the isolation diode D5 is mainly used to limit the flow direction of the current. The MOS transistor Q3 is mainly used for switching on or switching off a clamped network under the control of a control circuit.
In summary, the present invention discloses a voltage clamping circuit based on a power MOS, wherein a control circuit detects a clamped voltage signal, and generates a clamping control signal to drive the on and off of a MOS transistor Q3 to implement clamping after comparing the voltage signal with a set clamping voltage: when the voltage at two ends of the clamping network is lower than the set clamping voltage, the clamping circuit does not clamp. When the voltage at two ends of the clamping network is higher than the set clamping voltage, the control circuit generates a clamping signal to drive the MOS tube Q3 to be conducted, so that the energy at two ends of the clamping network is quickly released, the voltage at two ends of the clamping network is reduced to a safe range, and the purpose of clamping is achieved.
In addition, the invention also discloses a voltage clamping system based on the power MOS, which comprises two sets of voltage clamping circuits based on the power MOS, which are described in the previous embodiment. When two sets of voltage clamping circuits based on the power MOS are combined in anti-parallel, the voltage clamping system can realize bidirectional clamping; when two sets of voltage clamping circuits based on power MOS are connected in series in a redundancy combination mode, the voltage clamping system has higher reliability.
Although the present invention has been described in terms of the preferred embodiments, it is not intended to be limited to the embodiments, and any person skilled in the art can make any possible variations and modifications to the technical solution of the present invention by using the methods and technical matters disclosed above without departing from the spirit and scope of the present invention, so any simple modifications, equivalent variations and modifications to the embodiments described above according to the technical matters of the present invention are within the scope of the technical matters of the present invention.
What is not described in detail in the present specification belongs to the known technology of those skilled in the art.
Claims (6)
1. A power MOS-based voltage clamp circuit, comprising: the isolation diode D5, the MOS tube Q3 and the control circuit;
the isolation diode D5 is connected with the MOS tube Q3 in series; the cathode of the isolation diode D5 is connected with the D pole of the MOS transistor Q3;
the control circuit is connected with the isolation diode D5 and the MOS tube Q3 which are connected in series and connected with the network A and the network B in parallel; wherein, the high end of the control circuit connects with the network A, the low end connects with the network B; the anode of the isolation diode D5 is connected with the network A, and the S electrode of the MOS tube Q3 is connected with the network B;
the control circuit is used for controlling the connection and disconnection of the MOS tube Q3 according to the voltage signal of the clamped network so as to realize clamping; a control circuit, comprising: resistor R1, resistor R2, resistor R3, resistor R4, resistor R5, zener diode D1, diode D2, zener diode D3, diode D4, transistor Q1 and transistor Q2; the diode D4 is a high end of the control circuit, and the cathode of the diode D4 is respectively connected with the cathode of the zener diode D1, one end of the resistor R3 and one end of the resistor R4;
the anode of the voltage stabilizing diode D1 is connected with one end of a resistor R1, and the other end of the resistor R1 is respectively connected with one end of a resistor R2, the cathode of the diode D2 and the base electrode of a triode Q1;
the other end of the resistor R3 is connected with the collector electrode of the triode Q1 and the base electrode of the triode Q2;
the other end of the resistor R4, the cathode of the zener diode D3, the drain electrode of the triode Q2 and one end of the resistor R5 are connected with the control end of the control circuit;
the anode of the zener diode D3 is connected with the anode of the diode D2;
the other end of the resistor R2, the emitter of the triode Q1, the emitter of the triode Q2 and the other end of the resistor R5 are connected with the low end of the control circuit.
2. The voltage clamping circuit based on power MOS of claim 1, wherein the control circuit, when controlling the on and off of the MOS transistor Q3 according to the voltage signal of the clamped network to implement clamping, comprises:
when V is AB ＜V Threshold value When the diode D1 is controlled to be cut off, the triode Q1 is controlled to be cut off; voltage V AB The base electrode of the triode Q2 is powered by a diode D4 and a resistor R3; the triode Q2 is conducted, so that the GS voltage of the MOS tube Q3 is lower than the conducting voltage of the MOS tube Q3, and the MOS tube Q3 is cut off; wherein V is Threshold value Representing the set clamping voltage; v (V) AB Representing the voltage between network a and network B, i.e. the voltage of the clamped network.
3. The voltage clamping circuit based on power MOS of claim 2, wherein the control circuit, when controlling the on and off of the MOS transistor Q3 according to the voltage signal of the clamped network to realize clamping, further comprises:
when V is AB ≥V Threshold value In the time, the diode D1 is controlled to be turned on, the voltage V AB The base electrode of the triode Q1 is supplied with power through a diode D4, a diode D1 and a resistor R1; the triode Q1 is conducted, so that the base voltage of the triode Q2 is lower than the conducting voltage of the triode Q2, and the triode Q2 is cut off; voltage V AB The base electrode of the triode Q1 is supplied with power after passing through the diode D4, the resistor R4, the diode D3 and the diode D2 so as to maintain the conduction of the triode Q1 and the cut-off of the triode Q2, and meanwhile, the voltage V AB The G pole of the MOS tube Q3 is powered through the diode D4, the resistor R4 and the resistor R5, and the MOS tube Q3 is conducted; voltage V AB Discharging through diode D5 and MOS tube Q3, and decreasing voltage value until voltage V AB The voltage value of (2) is reduced until the conduction of the MOS transistor Q3 can not be maintained, so as to obtain a voltage V AB Limited to the set clamping voltage.
4. A power MOS based voltage clamp circuit according to any of claims 1-3, characterized by an isolation diode D5 for limiting the direction of the current flow.
5. A power MOS-based voltage clamp circuit according to any one of claims 1 to 3, characterized in that the MOS transistor Q3 is adapted to switch on or off the clamped network under the control of the control circuit.
6. A power MOS-based voltage clamping system, comprising: two sets of voltage clamping circuits based on power MOS as claimed in claim 1;
two sets of voltage clamping circuits based on power MOS are combined in anti-parallel to realize bidirectional clamping;
or alternatively, the first and second heat exchangers may be,
the two sets of voltage clamping circuits based on the power MOS are connected in series and redundantly combined to improve the reliability.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110887651.7A CN113541116B (en) | 2021-08-03 | 2021-08-03 | Voltage clamping circuit and system based on power MOS |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110887651.7A CN113541116B (en) | 2021-08-03 | 2021-08-03 | Voltage clamping circuit and system based on power MOS |
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| CN113541116A CN113541116A (en) | 2021-10-22 |
| CN113541116B true CN113541116B (en) | 2023-11-10 |
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| Publication number | Publication date |
|---|---|
| CN113541116A (en) | 2021-10-22 |
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