CN113540939A - Double-end pumping high-power laser - Google Patents
Double-end pumping high-power laser Download PDFInfo
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- CN113540939A CN113540939A CN202110757616.3A CN202110757616A CN113540939A CN 113540939 A CN113540939 A CN 113540939A CN 202110757616 A CN202110757616 A CN 202110757616A CN 113540939 A CN113540939 A CN 113540939A
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- beam splitter
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0619—Coatings, e.g. AR, HR, passivation layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
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- Crystallography & Structural Chemistry (AREA)
- Lasers (AREA)
Abstract
The invention discloses a double-end pumping high-power laser, which comprises: 808nm pumping source, a first coupler, a first beam splitter, a laser crystal, a second beam splitter, a second coupler, a 878nm pumping source, an output mirror and a third beam splitter. The high-reflection film is plated on the beam splitter to reflect the light emitted by the opposite pumping source, so that the light irradiated by the opposite pumping source can be effectively prevented from damaging the pumping source on the other side, the service life of the device is prolonged, and the cost is reduced.
Description
Technical Field
The invention relates to the technical field of lasers, in particular to a double-end pumping high-power laser.
Background
When the existing double-end pump light laser is used, the pump sources at two ends are easily irradiated by the pump light emitted by the opposite pump source, and the pump sources are easily damaged under long-time irradiation, so that the manufacturing cost of the device is increased, and the service life of the pump sources is reduced. Therefore, it is urgently needed to design a device for preventing the high-power pump laser.
Disclosure of Invention
The invention aims to provide a double-end pumping high-power laser which can block pumping light emitted by an opposite pumping source, so that the service life of the device is prolonged.
In order to achieve the above object, the present invention employs the following:
a double-pumped high power laser comprising: 808nm pumping source, a first coupler, a first beam splitter, a laser crystal, a second beam splitter, a second coupler, a 878nm pumping source, an output mirror and a third beam splitter; a first beam splitter and a second beam splitter are respectively arranged on two sides of the laser crystal; a first coupler is arranged on the left side of the first beam splitter; a 808nm pumping source is arranged on the left side of the first coupler; a second coupler is arranged on the right side of the second beam splitter; a 878nm pumping source is arranged on the right side of the second coupler; an output mirror is arranged on the front side of the first beam splitter, and a laser outlet is arranged in the middle of the output mirror; a third beam splitter is arranged on the front side of the second beam splitter; 808nm antireflection films are plated on two sides of the first beam splitter, and 878nm and 1064nm high-reflection films are plated on the right side of the first beam splitter; and two sides of the second beam splitter are plated with 878nm antireflection films, and the left side of the second beam splitter is plated with 808nm and 1064nm high-reflection films.
Preferably, the pump source is a semiconductor diode laser.
Preferably, both sides of the laser crystal are inclined planes and are symmetrical along the center of the laser crystal; the inner side surface of the left inclined surface of the laser crystal is plated with an antireflection film of 808nm and 1064nm and a high-reflection film of 878nm, and the inner side surface of the right inclined surface is plated with an antireflection film of 878nm and 1064nm and a high-reflection film of 808 nm.
Preferably, the device further comprises a light barrier; two light barriers are arranged on the left side and the right side of the laser crystal respectively; light holes are formed in the middle of the two light blocking plates, and the centers of the two light holes and the center of the laser crystal are located on the same light path.
Preferably, the optical wave of the pump source can be adjusted according to actual needs.
Preferably, the light barrier is made of a metal material.
Preferably, the laser crystal is in a strip shape or a block shape, the length is 10mm-30mm, the width is 3mm-5mm, and the thickness is 3mm-5 mm.
Preferably, the first beam splitter, the second beam splitter, the output mirror and the third beam splitter are plane mirrors.
The invention has the following advantages:
the device has simple structure, reasonable design and convenient operation, and can effectively reflect the light emitted by the opposite pump source by plating the high-reflection film of the opposite pump source light wave on the inner side of the beam splitter; or the inner side of the inclined plane of the corresponding side of the laser crystal is plated with the high reflection film, or the two sides of the laser crystal are provided with the light blocking plates, so that the opposite pumping source can be effectively blocked, and the light emitted by the pumping source at the same side enters the laser crystal through the light hole.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a first double-end pumped high-power laser according to the present invention.
Fig. 2 is a schematic structural diagram of a second high-power laser capable of protecting a pump source according to the present invention.
Fig. 3 is a schematic structural diagram of a third high-power laser capable of protecting a pump source according to the present invention.
Fig. 4 is a schematic structural diagram of a third high-power laser capable of protecting a pump source according to the present invention.
In the figures, the various reference numbers are:
1-808nm pumping source, 2-first coupler, 3-first beam splitter, 4-laser crystal, 5-second beam splitter, 6-second coupler, 7-878nm pumping source, 8-output mirror, 9-third beam splitter, 10-light barrier, 11-light hole, 12-laser outlet, 13-808nm antireflection film, 14-878nm antireflection film, 15-878nm and 1064nm antireflection film, 808nm high-reflection film, 16-808nm and 1064nm antireflection film and 878nm high-reflection film.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
As shown in fig. 1, a double-end pumped high power laser includes: 808nm pump source 1, a first coupler 2, a first beam splitter 3, a laser crystal 4, a second beam splitter 5, a second coupler 6, a 878nm pump source 7, an output mirror 8 and a third beam splitter 9; a first beam splitter 3 and a second beam splitter 5 are respectively arranged on two sides of a laser crystal 4, a first coupler 2 is arranged on the left side of the first beam splitter 3, a 808nm pump source 1 is arranged on the left side of the first coupler 2, a second coupler 6 is arranged on the right side of the second beam splitter 5, a 878nm pump source 7 is arranged on the right side of the second coupler 6, an output mirror 8 is arranged on the front side of the first beam splitter 3, and a laser outlet 12 is arranged in the middle of the output mirror 8, so that laser can be conveniently emitted; a third beam splitter 9 is arranged on the front side of a second beam splitter 5, a 808nm antireflection film is plated on the left side of the first beam splitter 3, a 878nm and 1064nm high-reflection film and a 808nm antireflection film are plated on the right side of the first beam splitter 5, a 878nm antireflection film is plated on the right side of the second beam splitter 5, and a 808nm and 1064nm high-reflection film and a 878nm antireflection film are plated on the left side of the second beam splitter.
When the device works, light emitted by a 808nm pump source 1 is coupled through a first coupler 2, then continuously penetrates through a first beam splitter 3 and irradiates into a laser crystal 4 to be converted into 1064nm light waves, at the moment, part of light of the 808nm light waves penetrates through the laser crystal 4 and irradiates onto a second beam splitter 5, and the 808nm light waves can be reflected out due to the fact that a 808nm high-reflection film is plated on the left side of the second beam splitter 5, and the 808nm light waves are prevented from being continuously transmitted and irradiated into a 878nm pump source to be damaged; meanwhile, light emitted by the 878nm pump source 7 is coupled through the second coupler 6, then continuously passes through the second beam splitter 5 and irradiates into the laser crystal 4 to be converted into 1064nm light waves, at the moment, part of the light of the 878nm light waves passes through the laser crystal 4 and irradiates onto the first beam splitter 3, and the 878nm light waves can be reflected out due to the 878nm high-reflection film plated on the right side of the first beam splitter 3, so that the 878nm light waves are prevented from continuously transmitting and irradiating into the 808nm pump source 1 to be damaged; the 1064nm light wave in the laser crystal 4 moves back and forth through the first beam splitter 3, the second beam splitter 5, the output mirror 8 and the third beam splitter 9, and finally is emitted out through the laser outlet 12 on the output mirror 8 for use.
Further, the pump source is a semiconductor diode laser.
Furthermore, the optical wave of the pump source can be adjusted according to actual needs.
As shown in fig. 2 and 3, a double-pumped high power laser includes: 808nm pump source 1, a first coupler 2, a first beam splitter 3, a laser crystal 4, a second beam splitter 5, a second coupler 6, a 878nm pump source 7, an output mirror 8 and a third beam splitter 9; a first beam splitter 3 and a second beam splitter 5 are respectively arranged on two sides of the laser crystal 4; a first coupler 2 is arranged on the left side of the first beam splitter 3; a 808nm pump source 1 is arranged on the left side of the first coupler 2; a second coupler 6 is arranged on the right side of the second beam splitter 5; a 878nm pump source 7 is arranged on the right side of the second coupler 6; an output mirror 8 is arranged on the front side of the first beam splitter 3, and a laser outlet 12 is arranged in the middle of the output mirror 8; a third beam splitter 9 is arranged on the front side of the second beam splitter 5; 808nm antireflection films are plated on two sides of the first beam splitter 3, and 878nm and 1064nm high-reflection films are plated on the right side of the first beam splitter; two sides of the second beam splitter 5 are plated with 878nm antireflection films, and the left side of the second beam splitter 5 is plated with 808nm and 1064nm high-reflection films; the two sides of the laser crystal 4 are inclined planes and are symmetrical along the center of the laser crystal 4; the inner side surface of the left inclined surface of the laser crystal 4 is plated with 808nm and 1064nm antireflection films and 878nm high-reflection films, and the inner side surface of the right inclined surface is plated with 878nm and 1064nm antireflection films and 808nm high-reflection films.
When the device is used, the left side of the first beam splitter 3 is plated with an antireflection film of a 808nm pumping source 1, the inner side surface of the left side inclined plane of the laser crystal 4 is plated with a 878nm high-reflection film, the inner side surface of the right side inclined plane is plated with a 808nm high-reflection film, and the right side of the second beam splitter 5 is plated with a 878nm antireflection film, so that opposite light can be effectively reflected to irradiate the corresponding pumping source; meanwhile, a 878nm high-reflection film can be plated on the right side of the first beam splitter 3, and a 808nm high-reflection film is plated on the left side of the second beam splitter 5, so that pumping light emitted by the opposite pumping source can be better reflected in a double mode.
As shown in fig. 4, the apparatus further comprises a light barrier 10; two light barriers 10 are arranged on the left side and the right side of the laser crystal 4 respectively; the light holes 11 are formed in the middle of the two light blocking plates 10, and the centers of the two light holes 11 and the center of the laser crystal 4 are located on the same light path, so that light emitted by the pump sources on the two sides can be conveniently transmitted to the laser crystal 4.
When the device is used, the left side of the first beam splitter 3 is plated with an antireflection film of a 808nm pumping source 1, the inner side surface of the left side inclined plane of the laser crystal 4 is plated with a 878nm high-reflection film, the inner side surface of the right side inclined plane is plated with a 808nm high-reflection film, and the right side of the second beam splitter 5 is plated with a 878nm antireflection film, so that opposite light can be effectively reflected to irradiate the corresponding pumping source; meanwhile, a 878nm high-reflection film can be plated on the right side of the first beam splitter 3, a 808nm high-reflection film can be plated on the left side of the second beam splitter 5, and the service life of the pumping source can be prolonged by reflecting light waves through the double high-reflection films; meanwhile, the light barrier 10 is added, the light barrier 10 is infinitely close to the laser crystal 4, when the light emitted by the pumping source is closer to the laser crystal 4, the light path is thinner, and the size of the light hole 11 in the light barrier 10 can be reduced, so that more light waves can be blocked from passing through the light barrier 10, and the pumping source is better protected from being damaged by the light emitted by the opposite pumping source; at this time, the 1064nm light wave in the laser crystal 4 moves back and forth between the first beam splitter 3, the second beam splitter 5, the output mirror 8 and the third beam splitter 9, and finally is emitted out through the laser outlet 12 on the output mirror 8 for use.
Further, the light barrier 10 is made of a metal material.
Furthermore, the laser crystal is in a strip shape or a block shape, the length is 10mm-30mm, the width is 3mm-5mm, and the thickness is 3mm-5 mm.
Further, the first beam splitter 3, the second beam splitter 5, the output mirror 8 and the third beam splitter 9 are plane mirrors.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (8)
1. A double-pumped high power laser, comprising: 808nm pumping source, a first coupler, a first beam splitter, a laser crystal, a second beam splitter, a second coupler, a 878nm pumping source, an output mirror and a third beam splitter; a first beam splitter and a second beam splitter are respectively arranged on two sides of the laser crystal; a first coupler is arranged on the left side of the first beam splitter; a 808nm pumping source is arranged on the left side of the first coupler; a second coupler is arranged on the right side of the second beam splitter; a 878nm pumping source is arranged on the right side of the second coupler; an output mirror is arranged on the front side of the first beam splitter, and a laser outlet is arranged in the middle of the output mirror; a third beam splitter is arranged on the front side of the second beam splitter; 808nm antireflection films are plated on two sides of the first beam splitter, and 878nm and 1064nm high-reflection films are plated on the right side of the first beam splitter; and two sides of the second beam splitter are plated with 878nm antireflection films, and the left side of the second beam splitter is plated with 808nm and 1064nm high-reflection films.
2. A two-end pumped high power laser as claimed in claim 1, wherein the pump source is a semiconductor diode laser.
3. The double-end pumped high-power laser as claimed in claim 2, wherein both sides of the laser crystal are beveled and symmetrical along the center of the laser crystal; the inner side surface of the left inclined surface of the laser crystal is plated with an antireflection film of 808nm and 1064nm and a high-reflection film of 878nm, and the inner side surface of the right inclined surface is plated with an antireflection film of 878nm and 1064nm and a high-reflection film of 808 nm.
4. A double-end pumped high power laser as claimed in claim 1 or 3, further comprising a light barrier; two light barriers are arranged on the left side and the right side of the laser crystal respectively; light holes are formed in the middle of the two light blocking plates, and the centers of the two light holes and the center of the laser crystal are located on the same light path.
5. The double-ended pump high power laser as claimed in claim 4, wherein the optical wave of the pump source can be adjusted according to actual needs.
6. The double-pumped high power laser as claimed in claim 4, wherein said optical barrier is made of a metallic material.
7. The double-end pumped high-power laser as claimed in claim 4, wherein the laser crystal is slab or block shaped, and has a length of 10mm to 30mm, a width of 3mm to 5mm, and a thickness of 3mm to 5 mm.
8. The double-end pumped high-power laser as claimed in claim 4, wherein the first beam splitter, the second beam splitter, the output mirror and the third beam splitter are flat mirrors.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110757616.3A CN113540939A (en) | 2021-07-05 | 2021-07-05 | Double-end pumping high-power laser |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110757616.3A CN113540939A (en) | 2021-07-05 | 2021-07-05 | Double-end pumping high-power laser |
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| CN113540939A true CN113540939A (en) | 2021-10-22 |
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| CN202110757616.3A Pending CN113540939A (en) | 2021-07-05 | 2021-07-05 | Double-end pumping high-power laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115459039A (en) * | 2022-11-14 | 2022-12-09 | 安徽华创鸿度光电科技有限公司 | High-reliability high-power slab amplifier |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6055263A (en) * | 1996-02-02 | 2000-04-25 | Fanuc Ltd. | Solid-state laser oscillating device |
| CN1688070A (en) * | 2005-03-29 | 2005-10-26 | 清华大学 | 45 deg. oblique axis pumping method and pumping module for strip shaped laser crystal |
| CN106848821A (en) * | 2017-04-13 | 2017-06-13 | 中国科学技术大学 | A kind of pump laser |
| CN108879311A (en) * | 2018-06-29 | 2018-11-23 | 北京遥测技术研究所 | A kind of pump coupling device and method for strip shaped laser crystal |
-
2021
- 2021-07-05 CN CN202110757616.3A patent/CN113540939A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6055263A (en) * | 1996-02-02 | 2000-04-25 | Fanuc Ltd. | Solid-state laser oscillating device |
| CN1688070A (en) * | 2005-03-29 | 2005-10-26 | 清华大学 | 45 deg. oblique axis pumping method and pumping module for strip shaped laser crystal |
| CN106848821A (en) * | 2017-04-13 | 2017-06-13 | 中国科学技术大学 | A kind of pump laser |
| CN108879311A (en) * | 2018-06-29 | 2018-11-23 | 北京遥测技术研究所 | A kind of pump coupling device and method for strip shaped laser crystal |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115459039A (en) * | 2022-11-14 | 2022-12-09 | 安徽华创鸿度光电科技有限公司 | High-reliability high-power slab amplifier |
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Application publication date: 20211022 |