CN113540807B - Resonant tunneling diode terahertz oscillator and circuit structure thereof - Google Patents
Resonant tunneling diode terahertz oscillator and circuit structure thereof Download PDFInfo
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- CN113540807B CN113540807B CN202110707842.0A CN202110707842A CN113540807B CN 113540807 B CN113540807 B CN 113540807B CN 202110707842 A CN202110707842 A CN 202110707842A CN 113540807 B CN113540807 B CN 113540807B
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- 230000005641 tunneling Effects 0.000 title claims abstract description 80
- 239000003990 capacitor Substances 0.000 claims description 19
- 230000000087 stabilizing effect Effects 0.000 claims description 18
- 230000010355 oscillation Effects 0.000 abstract description 14
- 230000005855 radiation Effects 0.000 abstract description 12
- 238000004088 simulation Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/10—Resonant slot antennas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/002—Protection against seismic waves, thermal radiation or other disturbances, e.g. nuclear explosion; Arrangements for improving the power handling capability of an antenna
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
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Abstract
The invention discloses a resonant tunneling diode terahertz oscillator and a circuit structure thereof, which comprises the following components: a slot antenna and a resonant tunneling diode; wherein the resonant tunneling diode is used for determining a feeding point of the slot antenna, and the feeding point is deviated from the center of the slot antenna; the feed point is used for dividing the slot antenna into a long slot antenna and a short slot antenna, the long slot antenna corresponds to the first slot resonant cavity, and the short slot antenna corresponds to the second slot resonant cavity; compared with the prior art, the invention satisfies the condition of maximum power impedance matching under the condition of high-frequency oscillation, and realizes high-efficiency radiation output power.
Description
Technical Field
The invention relates to the technical field of terahertz, in particular to a resonant tunneling diode terahertz oscillator and a circuit structure thereof.
Background
The resonant tunneling diode is a two-end quantum device formed by sandwiching a quantum potential well between two quantum potential barriers, and works by means of the so-called resonant tunneling effect, has the volt-ampere characteristic of negative resistance and smaller parasitic parameters, and has the negative resistance effect from DC to terahertz frequency band, so that the resonant tunneling diode is suitable for being used as an oscillator of the terahertz frequency band.
The traditional monolithic circuit design method generally adopts a microstrip or coplanar waveguide stub and a resonance tunneling diode self parasitic capacitance to form a resonance structure to generate terahertz waves, but the parasitic parameters of the microstrip line are large, the Q value is low, and the method is difficult to be applied to a higher-frequency oscillation source. In the conventional technology at present, an on-chip slot antenna and a resonant tunneling diode are generally integrated, the resonant tunneling diode is arranged at the center of the slot antenna, and resonance is formed by utilizing the inductance characteristic of the antenna and the parasitic capacitance of the resonant tunneling diode, so that terahertz waves are generated. To obtain extremely high frequencies, the slot antenna needs to be greatly reduced in size, which results in a drastic decrease in the radiation efficiency of the oscillator and severely affects the power output.
Disclosure of Invention
The invention aims to solve the technical problems that: the terahertz oscillator of the resonant tunneling diode and the circuit structure thereof meet the condition of maximum power impedance matching, and realize high-efficiency radiation output power.
In order to solve the above technical problems, the present invention provides a resonant tunneling diode terahertz oscillator, including: a slot antenna and a resonant tunneling diode;
wherein the resonant tunneling diode is used for determining a feeding point of the slot antenna, and the feeding point is deviated from the center of the slot antenna;
the feed point is used for dividing the slot antenna into a long slot antenna and a short slot antenna, the long slot antenna corresponds to the first slot resonant cavity, and the short slot antenna corresponds to the second slot resonant cavity;
the long slot antenna is used for controlling the real part of the impedance of the slot antenna, and the short slot antenna is used for controlling the imaginary part of the impedance of the slot antenna.
Further, the resonant tunneling diode terahertz oscillator further comprises an MIM capacitor, a stabilizing resistor and an air bridge;
the MIM capacitor comprises an upper electrode, a dielectric layer and a lower electrode from top to bottom in sequence, wherein the lower electrode is connected with the first end of the resonant tunneling diode;
the first end of the air bridge is connected with the upper electrode, the second end of the air bridge is connected with the second end of the resonant tunneling diode, and the first resonant cavity and the second resonant cavity are positioned below the air bridge;
the first end of the stabilizing resistor is connected with the upper electrode, and the second end of the stabilizing resistor is connected with the lower electrode.
Further, the feed point of the slot antenna is determined by simultaneously matching the real part and the imaginary part of impedance of the resonant tunneling diode based on a conjugate matching condition.
Further, the lower electrode corresponding to the first gap resonant cavity and the second gap resonant cavity is hollowed.
Further, the present invention also provides a circuit structure, which includes: the antenna comprises a first power supply, a first inductor, a second inductor, an MIM capacitor, a slot antenna, a resonant tunneling diode, a stabilizing resistor and a first capacitor;
the positive pole of first power with the first end of first inductance is connected, the second end of first inductance with the second inductance stable resistance with the first end of first electric capacity is connected, the second inductance with the positive pole of resonance tunneling diode is connected, the second inductance still with the first end of MIM electric capacity is connected, the second end of MIM electric capacity with the first end of slot antenna is connected, the second end of slot antenna with the negative pole of resonance tunneling diode is connected, the slot antenna still with stable resistance with the second end of first electric capacity is connected, the negative pole of first power with stable resistance with the second end of first electric capacity is connected.
Compared with the prior art, the resonant tunneling diode terahertz oscillator and the circuit structure thereof have the following beneficial effects:
the resonant tunneling diode is used for determining a feeding point of the slot antenna, and the feeding point is deviated from the center of the slot antenna; the feed point is used for dividing the slot antenna into a long slot antenna and a short slot antenna, the long slot antenna corresponds to the first slot resonant cavity, and the short slot antenna corresponds to the second slot resonant cavity; compared with the prior art, the invention satisfies the condition of maximum power impedance matching under the condition of high-frequency oscillation, and realizes high-efficiency radiation output power.
Drawings
Fig. 1a and 1b are schematic structural diagrams of an embodiment of a resonant tunneling diode terahertz oscillator provided by the present invention;
FIG. 2 is a diagram showing I-V characteristics of a resonant tunneling diode of the terahertz oscillation source of the resonant tunneling diode;
FIG. 3 is a schematic diagram of one embodiment of a circuit structure provided by the present invention;
fig. 4a, fig. 4b, and fig. 4c are diagrams showing simulation results of an embodiment of the resonant tunneling diode terahertz oscillator provided by the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
Referring to fig. 1a and 1b, fig. 1a and 1b are schematic structural diagrams of an embodiment of a resonant tunneling diode terahertz oscillator provided by the present invention, as shown in fig. 1a and 1b, the structure includes: the slot antenna 10 and the resonant tunneling diode 20 are specifically as follows:
the resonant tunneling diode 20 is used to determine a feeding point of the slot antenna 10, which is offset from the center of the slot antenna 10.
In the present embodiment, the feeding point of the slot antenna 10 is determined by simultaneously matching the real part and the imaginary part of the impedance of the resonant tunneling diode 20 based on the conjugate matching conditionThe two parts are equal in value; based on the existing resonant tunneling diode device, the negative resistance I-V curve of the resonant tunneling diode device can be obtained by a semiconductor parameter analyzer, as shown in figure 2, wherein the peak current density is 4.8mA/um 2 The peak-to-valley current difference DeltaI is 3.6mA, the negative resistance voltage interval DeltaV is 0.2V, and the junction capacitance C of the obtained resonant tunneling diode is 5fF/um 2 And junction resistance R is 5 omega um 2 。
The feed point is used to divide the slot antenna 10 into a long slot antenna 11 and a short slot antenna 12, the long slot antenna 11 corresponding to the first slot resonator 13 and the short slot antenna 12 corresponding to the second slot resonator 14.
In this embodiment, the shorter the antenna, the higher the resonant frequency, the inductive input impedance of the slot antenna 10 becomes when the antenna is shorter than 1/4 wavelength, and the shorter the length of the short slot antenna 12, which satisfies the above-mentioned requirement that the slot antenna 10 is shorter than 1/4 wavelength, so that the inductance characteristic of the input impedance is dominant, and the short slot antenna 12 is mainly used for controlling the frequency of the oscillator of the resonant tunneling diode 20 and for controlling the imaginary part of the impedance of the slot antenna 10.
In this embodiment, the length of the long slot antenna 11 is longer than that of the short slot antenna 12, resulting in lower resonance frequency, so that the conductivity of the input impedance is dominant, the long slot antenna 11 is mainly used for controlling the output power of the oscillator of the resonant tunneling diode 20, and also used for controlling the real part of the impedance of the slot antenna 10, and meanwhile, the longer the length of the slot, the higher the radiation efficiency; the output power of the resonant tunneling diode 20 oscillator is also related to the conductance Gr provided by the slot antenna 10, the output power of the resonant tunneling diode 20 oscillator is related to G r (a-G r ) Proportional to b, where a, b are the linear and nonlinear parameters of the fit, when G r The resonant tunneling diode 20 oscillator can output maximum power, =a/2.
In this embodiment, the inductance required to be provided by the slot antenna 10 is calculated according to the required design frequency by the formula:where f is the oscillator frequency of the resonant tunneling diode 20 and L is the required supply of the slot antenna 10Inductance, C, is the junction capacitance of the resonant tunneling diode 20. The slot antenna 10 can be equivalently a mirror image of a dipole antenna of corresponding size, and has an input impedance R s Can be according to formula R s ＝(60π) 2 /R d Wherein R is d As the dipole antenna impedance, the dipole antenna impedance can be obtained by looking up a table, and when the imaginary part of the obtained dipole antenna impedance is equal to the calculated value of 2pi fL, the size corresponding to the dipole antenna is the size of the short slot antenna 12; meanwhile, when the real part of the impedance of the obtained dipole antenna is equal to the calculated value of 2pi fL, the corresponding dimension of the dipole antenna is the dimension of the long slot antenna 11.
In this embodiment, the long slot antenna 11 and the short slot antenna 12 are designed optimally mainly by full-wave electromagnetic simulation software HFSS, and in the full-wave simulation process, by electromagnetic coupling analysis, the coupling parasitic effect generated by coupling the long slot antenna 11 and the short slot antenna 12 is considered, so that the performance is further optimized,
referring to fig. 1a and 1b, fig. 1a and 1b are schematic structural views of an embodiment of a resonant tunneling diode terahertz oscillator provided in the present invention, and as shown in fig. 1a and 1b, the structure further includes a MIM capacitor 30, a stabilizing resistor 40, and an air bridge 50, specifically as follows:
in this embodiment, the MIM capacitor 30 has an upper electrode 31, a dielectric layer 32 and a lower electrode 33 sequentially from top to bottom, and the lower electrode 33 is connected to the first end of the resonant tunneling diode 20; a first end of the air bridge 50 is connected with the upper electrode 31, a second end of the air bridge 50 is connected with a second end of the resonant tunneling diode 20, and the first and second slot resonators 13 and 14 are positioned below the air bridge 50; hollowing the lower electrode 33 corresponding to the first gap resonant cavity 13 and the second gap resonant cavity 14; a first end of the stabilizing resistor 40 is connected with the upper electrode 31, and a second end of the stabilizing resistor 40 is connected with the lower electrode 33; the upper electrode 31, the lower electrode 32 and the stabilizing resistor are disposed on the GaAs substrate.
As another example of the embodiment, the device model and the frequency band requirements of different users are differentThe method can be optimized through the HFSS of the full-wave electromagnetic simulation software, and a proper antenna structure is designed; in particular, when the design goal is to achieve high power output at a frequency of 500GHz, the area of the resonant tunneling diode is 3.66um 2 Peak current density of 4mA/um 2 The peak-to-valley current ratio is 4, the long slot antenna 11 is 64um, the short slot antenna 12 is 16um, the corresponding offset feed degree is 0.8, the MIM capacitor takes 20pF, the stabilizing resistor 40 is 15 ohm, the simulation result shows that the output power of the resonant tunneling diode is 600uW, the actual radiation power is the output power x radiation efficiency of the resonant tunneling diode, and the radiation efficiency is 60% at the moment, so that the radiation power is 360uW.
Referring to fig. 3, fig. 3 is a schematic diagram of a circuit structure according to an embodiment of the present invention, and as shown in fig. 3, the circuit structure includes: the first power supply 8, the first inductor 1, the second inductor 2, the MIM capacitor 30, the slot antenna 10, the resonant tunneling diode 20, the stabilizing resistor 40 and the first capacitor 4 are specifically as follows:
in this embodiment, the positive electrode of the first power supply 8 is connected to the first end of the first inductor 1, the second end of the first inductor 1 is connected to the second inductor 2, the stabilizing resistor 40 and the first end of the first capacitor 4, the stabilizing resistor 40 and the first capacitor 4 are in parallel connection, the second inductor 2 is connected to the positive electrode of the resonant tunneling diode 20, the second inductor 2 is further connected to the first end of the MIM capacitor 30, the second end of the MIM capacitor 30 is connected to the first end of the slot antenna 10, the second end of the slot antenna 10 is connected to the negative electrode of the resonant tunneling diode 20, the slot antenna 10 is further connected to the stabilizing resistor 40 and the second end of the first capacitor 4, and the negative electrode of the first power supply 8 is connected to the stabilizing resistor 40 and the second end of the first capacitor 4.
Referring to fig. 4a, fig. 4b, and fig. 4c, fig. 4a, fig. 4b, and fig. 4c are graphs of simulation results of an embodiment of the resonant tunneling diode terahertz oscillator provided by the present invention, as shown in fig. 4a, fig. 4a is a graph of simulation results of a slot antenna oscillator based on a resonant tunneling diode device model, as shown in fig. 4b, fig. 4b is a graph of simulation results of a relationship between a resonant tunneling diode device area and an oscillator oscillation frequency, as shown in fig. 4c, and fig. 4c is a graph of simulation results of a resonant tunneling diode output power and a frequency variation.
In this embodiment, a simulation result diagram of a slot antenna oscillator based on a resonant tunneling diode device model is that the larger the slot length of the slot antenna is, the higher the radiation efficiency of the slot antenna is, and the slot antenna radiation efficiency is tested under the condition that the slot antennas with different lengths are at different frequencies, with the oscillation frequency of the oscillator with center feed as the abscissa.
In this embodiment, a simulation result diagram of the relationship between the area of the resonant tunneling diode device and the oscillation frequency of the oscillator is that the area of the resonant tunneling diode device is taken as an abscissa, the oscillation frequency of the oscillator with center feed is taken as an ordinate, and in fig. 4b, the horizontal dashed line part is the oscillation frequency of the oscillator corresponding to the short slot antenna length at 28 nm; meanwhile, under the condition of fixed long slot length, the oscillator oscillation frequency is shown under the condition that the slot antennas with different polarization degrees are tested under the condition of different resonant tunneling diode device areas, and as can be seen from fig. 4b, when the polarization degree of the slot antenna is increased, the oscillation frequency is increased, and even the resonance frequency of the short slot antenna which can exceed 28um is increased.
In this embodiment, the simulation result graph of the output power and the frequency change of the resonant tunneling diode is that the oscillation frequency of the oscillator is taken as the abscissa, the output power of the resonant tunneling diode is taken as the ordinate, the relationship between the output power of the resonant tunneling diode and the oscillation frequency of the oscillator with different bias feeding degrees is tested, and from fig. 4c, it can be seen that the output power of the resonant tunneling diode changes with the frequency, and it can be seen that the slot antenna with the bias feeding structure has higher output power at the same frequency.
In summary, the resonant tunneling diode terahertz oscillator and the circuit structure thereof provided by the invention comprise: a slot antenna and a resonant tunneling diode; wherein the resonant tunneling diode is used for determining a feeding point of the slot antenna, and the feeding point is deviated from the center of the slot antenna; the feed point is used for dividing the slot antenna into a long slot antenna and a short slot antenna, the long slot antenna corresponds to the first slot resonant cavity, and the short slot antenna corresponds to the second slot resonant cavity; the length of the long slot antenna is longer than that of the short slot antenna; compared with the prior art, the invention satisfies the condition of maximum power impedance matching under the condition of high-frequency oscillation, and realizes high-efficiency radiation output power.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and substitutions can be made by those skilled in the art without departing from the technical principles of the present invention, and these modifications and substitutions should also be considered as being within the scope of the present invention.
Claims (4)
1. A resonant tunneling diode terahertz oscillator, comprising: a slot antenna and a resonant tunneling diode;
the resonant tunneling diode is used for determining a feeding point of the slot antenna, the feeding point is deviated from the center of the slot antenna, and the feeding point of the slot antenna is determined by simultaneously matching a real part and an imaginary part of impedance of the resonant tunneling diode under a conjugate matching condition;
the feed point is used for dividing the slot antenna into a long slot antenna and a short slot antenna, the long slot antenna corresponds to the first slot resonant cavity, and the short slot antenna corresponds to the second slot resonant cavity;
the long slot antenna is used for controlling the real part of the impedance of the slot antenna, and the short slot antenna is used for controlling the imaginary part of the impedance of the slot antenna.
2. The resonant tunneling diode terahertz oscillator of claim 1, further comprising a MIM capacitor, a stabilizing resistor, and an air bridge;
the MIM capacitor comprises an upper electrode, a dielectric layer and a lower electrode from top to bottom in sequence, wherein the lower electrode is connected with the first end of the resonant tunneling diode;
the first end of the air bridge is connected with the upper electrode, the second end of the air bridge is connected with the second end of the resonant tunneling diode, and the first gap resonant cavity and the second gap resonant cavity are positioned below the air bridge;
the first end of the stabilizing resistor is connected with the upper electrode, and the second end of the stabilizing resistor is connected with the lower electrode.
3. The resonant tunneling diode terahertz oscillator of claim 2, wherein the lower electrodes corresponding to the first and second slot resonators are hollowed out.
4. A circuit structure, the circuit structure comprising: a first power supply, a first inductor, a second inductor, an MIM capacitor, a slot antenna, a resonant tunneling diode, a stabilizing resistor and a first capacitor, wherein the circuit structure is applicable to a resonant tunneling diode terahertz oscillator as set forth in any one of claims 1 to 3;
the positive pole of first power with the first end of first inductance is connected, the second end of first inductance with the second inductance stable resistance with the first end of first electric capacity is connected, the second inductance with the positive pole of resonance tunneling diode is connected, the second inductance still with the first end of MIM electric capacity is connected, the second end of MIM electric capacity with the first end of slot antenna is connected, the second end of slot antenna with the negative pole of resonance tunneling diode is connected, the slot antenna still with stable resistance with the second end of first electric capacity is connected, the negative pole of first power with stable resistance with the second end of first electric capacity is connected.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110707842.0A CN113540807B (en) | 2021-06-24 | 2021-06-24 | Resonant tunneling diode terahertz oscillator and circuit structure thereof |
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| CN202110707842.0A CN113540807B (en) | 2021-06-24 | 2021-06-24 | Resonant tunneling diode terahertz oscillator and circuit structure thereof |
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| CN113540807A CN113540807A (en) | 2021-10-22 |
| CN113540807B true CN113540807B (en) | 2024-04-12 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594821A (en) * | 2013-11-27 | 2014-02-19 | 天津工业大学 | Dual-slot antenna based on resonant tunneling mechanism |
| CN109075744A (en) * | 2016-04-28 | 2018-12-21 | 佳能株式会社 | element |
| CN112635960A (en) * | 2019-09-24 | 2021-04-09 | 佳能株式会社 | Device and method for manufacturing device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6570187B2 (en) * | 2014-05-08 | 2019-09-04 | 国立大学法人東京工業大学 | Frequency variable terahertz oscillator and manufacturing method thereof |
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- 2021-06-24 CN CN202110707842.0A patent/CN113540807B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594821A (en) * | 2013-11-27 | 2014-02-19 | 天津工业大学 | Dual-slot antenna based on resonant tunneling mechanism |
| CN109075744A (en) * | 2016-04-28 | 2018-12-21 | 佳能株式会社 | element |
| CN112635960A (en) * | 2019-09-24 | 2021-04-09 | 佳能株式会社 | Device and method for manufacturing device |
Non-Patent Citations (1)
| Title |
|---|
| Terahertz coherent oscillator integrated with slot-ring antenna using two resonant tunneling diodes;Shuya Iwamatsu;《Applied Physics Express 14》;20210129;1-5 * |
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