CN103594821A - Dual-slot antenna based on resonant tunneling mechanism - Google Patents
Dual-slot antenna based on resonant tunneling mechanism Download PDFInfo
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- CN103594821A CN103594821A CN201310631873.8A CN201310631873A CN103594821A CN 103594821 A CN103594821 A CN 103594821A CN 201310631873 A CN201310631873 A CN 201310631873A CN 103594821 A CN103594821 A CN 103594821A
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Abstract
The invention discloses a dual-slot antenna based on a resonant tunneling mechanism, belonging to the antenna field. The dual-slot antenna comprises a dual-slot antenna body and a resonant tunneling diode (RTD), wherein the RTD is used as an excitation device to generate terahertz (THz) waves, and the dual-slot antenna body is used as an electromagnetic wave emitting device to emit the THz waves generated by the RTD. An upper electrode of the RTD is connected with a left electrode of the dual-slot antenna via a heat sink, and a lower electrode of the RTD is connected with a right electrode of the dual-slot antenna. According to the invention, position of a first slot of the RTD can be changed to emit THz waves in different frequency ranges, the radiation efficiency of the antenna is improved, and the dual-slot antenna has significance in applications to the fields including superspeed data link transmission, wireless communication and national defense and military.
Description
Technical field
The present invention relates to antenna technology and Terahertz Technology, particularly two slot antenna technology.
Background technology
Terahertz (THz) ripple refer to frequency at 0.1THz to the electromagnetic wave of 10THz scope, wavelength probably at 0.03mm within the scope of 3mm, between millimeter wave and infrared between.But due to the higher loss in air of THz ripple, need the emission source of high-gain and enough sensitive exploring antenna, make it in communications field commercialization, restrict the development of technology, therefore this frequency range is untapped white spaces, is also referred to as THz gap.
Due to the residing extraordinary electromagnetic wave spectral position of THz, make it have a lot of superior characteristics and there is very important science and using value, as the application at aspects such as physics, chemistry, biomedicine, astronomy, material science of THz imaging and THz Wave Spectrum, and the unique application having at aspects such as national security inspection, anti-terrorism drug law enforcement is worth.At present, THz technology is considered to one of ten large technology that change future world.
Inventor, in realizing process of the present invention, finds that prior art at least exists following shortcoming and defect:
The research of current domestic THz technology is mainly for the research in terahertz emission source, as semiconductor THz source, the THz generator based on photonic propulsion, the THz radiation source based on vacuum electronics.And for usining resonance tunnel-through diode as THz generator, and with antenna effectively in conjunction with the research that forms THz oscillator, domestic or blank out.
Summary of the invention
In order realizing, to using resonance tunnel-through diode as exciter component, to using antenna as electromagnetic wave transmitter part, the Terahertz Oscillators that combines and form, the invention process provides a kind of pair of slot antenna, and described technical scheme is as follows:
The double slit gap antenna of integrated RTD comprises: two slot antennas, RTD.
The combination of whole Antenna Design and RTD is usingd the Si-InP of half doping as matrix, wherein the left and right electrode of two slot antennas and heat sinkly consist of Au/Pd/Ti metal respectively; The top electrode of RTD is connected with the left electrode of two slot antennas by heat sink; The bottom electrode of RTD is connected with the right electrode of two slot antennas; Between the electrode of left and right, insert silicon dioxide, prevent that the two is in contact with one another, simultaneously in gap 1 and gap 2 ends form MIM (metal-insulator medium-metal) reflectors; Gap 1 is different with the width in gap 2, and frequency electromagnetic waves forms standing wave between gap 1 and gap 2.
The left and right electrode of described pair of slot antenna and heat sink be Au/Pd/Ti metal, also can all with Au, replace; Between the left and right electrode of slot antenna end, insert silicon dioxide, also available silicon replaces; Gap 2 can change the gap of other form into, such as T shape gap, H shape gap etc.
Accompanying drawing explanation:
In order to be illustrated more clearly in inventive embodiments or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only one embodiment of the present of invention, for those of ordinary skills, do not paying under the prerequisite of creating work, can also obtain with reference to the accompanying drawings other accompanying drawing.
Fig. 1 is double slit gap Antenna Design example of the present invention.
Embodiment:
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
In order to realize, using resonance tunnel-through diode as exciter component, using antenna as electromagnetic wave transmitter part in conjunction with the THz oscillator forming, the invention process provides a kind of pair of slot antenna, described below:
The research of current domestic THz technology is mainly for the research in terahertz emission source, as semiconductor THz source, the THz generator based on photonic propulsion, the THz radiation source based on vacuum electronics.And for usining resonance tunnel-through diode as THz generator, and the research of the THz oscillator forming with the effective combination of antenna, domestic or blank out.The present invention is based on resonance tunnel-through mechanism, proposed a kind of pair of slot antenna, realized RTD and this pair of slot antenna effectively in conjunction with the THz oscillator forming.
Fig. 1 is double slit gap Antenna Design example of the present invention.With reference to Fig. 1, it comprises: two slot antennas, MIM reflector, the Si-InP matrix of half doping.The thickness of the Si-InP matrix of half doping is 200um, and the area of whole antenna is 500um*1000um, left and right electrode and heat sink can all replacement by Au.The length in gap 1 is 100um, and width is 4um; The length in gap 2 is 120um, and width is 2um.The frequency of oscillation of this THz oscillator is 300GHz.The size in the length, RTD that can adjust gap 11 position cun and gap 2 in gap, meets the requirement of different frequency range THz frequency range, realizes RTD simultaneously and is combined the radiation efficiency of rear satisfied maximum with antenna.
Further, in order to realize the impedance matching of slot antenna and RTD, improve radiation efficiency, can change the size of whole pair of slot antenna, during specific implementation, the embodiment of the present invention is not restricted this.
Further, in order to improve the radiation efficiency of antenna, gap 2 can change the gap of other form into, such as T-shaped gap, H groove part gap etc., and during specific implementation, the embodiment of the present invention is not restricted this.
In sum, the embodiment of the present invention provides a kind of two slot antennas based on resonance tunnel-through mechanism, and the THz ripple that this antenna can meet transmitting different frequency range has improved the radiation efficiency of antenna simultaneously.This invention will be in Ultrahigh speed data link transmission, and the fields such as radio communication and military and national defense have important application.
It will be appreciated by those skilled in the art that accompanying drawing is the schematic diagram of a preferential embodiment, the invention described above embodiment sequence number, just to describing, does not represent the quality of embodiment.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (3)
1. two slot antennas based on resonance tunnel-through mechanism, this system comprises: two slot antennas, resonance tunnel-through diode (RTD), is characterized in that:
The top electrode of described RTD is connected with the left electrode of two slot antennas by heat sink; The bottom electrode of described RTD is connected with the right electrode of two slot antennas; Between the electrode of left and right, insert silicon dioxide, prevent that the two is in contact with one another, simultaneously in gap 1 and gap 2 ends form MIM (metal-insulator medium-metal) reflectors; Gap 1 is different with the width in gap 2, and due to the effect of two MIM reflectors, frequency electromagnetic waves forms standing wave between gap 1 and gap 2 so simultaneously; By regulate RTD in gap 1 position, can realize RTD and be combined the requirement of rear satisfied transmitting different frequency range THz wave with pair slot antennas.
2. according to right 1 requirement, described antenna is two slot antennas, it is characterized in that can by adjust RTD in gap 1 position, meet the requirement of transmitting different frequency range THz wave, by gap 2, improve the radiation efficiency of antenna, gap 2 can change the gap of other form into, such as T-shaped gap, H groove part gap etc.
3. according to right 1 requirement, described antenna forms MIM reflector at two gap ends, and gap 1 is different with the width in gap 2, and frequency electromagnetic waves forms standing wave between gap 1 and gap 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310631873.8A CN103594821A (en) | 2013-11-27 | 2013-11-27 | Dual-slot antenna based on resonant tunneling mechanism |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310631873.8A CN103594821A (en) | 2013-11-27 | 2013-11-27 | Dual-slot antenna based on resonant tunneling mechanism |
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| CN103594821A true CN103594821A (en) | 2014-02-19 |
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| CN201310631873.8A Pending CN103594821A (en) | 2013-11-27 | 2013-11-27 | Dual-slot antenna based on resonant tunneling mechanism |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113411138A (en) * | 2021-06-07 | 2021-09-17 | 苏州特拉芯光电技术有限公司 | Plug-and-play terahertz communication system based on resonant tunneling diode |
| CN113540807A (en) * | 2021-06-24 | 2021-10-22 | 深圳市时代速信科技有限公司 | Resonant tunneling diode terahertz oscillator and circuit structure thereof |
-
2013
- 2013-11-27 CN CN201310631873.8A patent/CN103594821A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113411138A (en) * | 2021-06-07 | 2021-09-17 | 苏州特拉芯光电技术有限公司 | Plug-and-play terahertz communication system based on resonant tunneling diode |
| CN113540807A (en) * | 2021-06-24 | 2021-10-22 | 深圳市时代速信科技有限公司 | Resonant tunneling diode terahertz oscillator and circuit structure thereof |
| CN113540807B (en) * | 2021-06-24 | 2024-04-12 | 深圳市时代速信科技有限公司 | Resonant tunneling diode terahertz oscillator and circuit structure thereof |
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Application publication date: 20140219 |