CN113540807A - Resonant tunneling diode terahertz oscillator and circuit structure thereof - Google Patents
Resonant tunneling diode terahertz oscillator and circuit structure thereof Download PDFInfo
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- CN113540807A CN113540807A CN202110707842.0A CN202110707842A CN113540807A CN 113540807 A CN113540807 A CN 113540807A CN 202110707842 A CN202110707842 A CN 202110707842A CN 113540807 A CN113540807 A CN 113540807A
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- 230000006641 stabilisation Effects 0.000 claims description 2
- 238000011105 stabilization Methods 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 abstract description 14
- 230000005855 radiation Effects 0.000 abstract description 13
- 238000010586 diagram Methods 0.000 description 12
- 238000004088 simulation Methods 0.000 description 10
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
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- 230000001939 inductive effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 238000006467 substitution reaction Methods 0.000 description 2
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/10—Resonant slot antennas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/002—Protection against seismic waves, thermal radiation or other disturbances, e.g. nuclear explosion; Arrangements for improving the power handling capability of an antenna
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
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Abstract
The invention discloses a resonant tunneling diode terahertz oscillator and a circuit structure thereof, wherein the resonant tunneling diode terahertz oscillator comprises: a slot antenna and a resonant tunneling diode; the resonant tunneling diode is used for determining a feeding point of the slot antenna, and the feeding point is deviated from the center of the slot antenna; the feed point is used for dividing the slot antenna into a long slot antenna and a short slot antenna, the long slot antenna corresponds to the first slot resonant cavity, and the short slot antenna corresponds to the second slot resonant cavity; compared with the prior art, the invention meets the condition of maximum power impedance matching under the condition of meeting high-frequency oscillation, and realizes high-efficiency radiation output power.
Description
Technical Field
The invention relates to the technical field of terahertz, in particular to a resonant tunneling diode terahertz oscillator and a circuit structure thereof.
Background
The two-end quantum device is formed by two quantum barriers sandwiching a quantum well, works by means of the resonant tunneling effect, has the volt-ampere characteristic of negative resistance and smaller parasitic parameters, and enables the device to have the negative resistance effect from a DC frequency band to a terahertz frequency band, so that the device is suitable for serving as an oscillator of the terahertz frequency band.
In the traditional monolithic circuit design method, a resonance structure is formed by generally adopting a microstrip or coplanar waveguide stub and a self-parasitic capacitor of a resonance tunneling diode to generate terahertz waves, but the microstrip line has large parasitic parameters and a low Q value, and is difficult to be suitable for a higher-frequency oscillation source. In the conventional technology at the present stage, an on-chip slot antenna and a resonant tunneling diode are generally integrated, the resonant tunneling diode is placed in the center of the slot antenna, and resonance is formed by using the inductance characteristic of the antenna and the parasitic capacitance of the resonant tunneling diode to generate terahertz waves. To obtain very high frequencies, the slot antenna needs to be greatly reduced in size, which results in a drastic drop in the radiation efficiency of the oscillator, and a serious impact on power output.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the resonant tunneling diode terahertz oscillator and the circuit structure thereof meet the condition of maximum power impedance matching and realize high-efficiency radiation output power.
In order to solve the above technical problem, the present invention provides a resonant tunneling diode terahertz oscillator, including: a slot antenna and a resonant tunneling diode;
the resonant tunneling diode is used for determining a feeding point of the slot antenna, and the feeding point is deviated from the center of the slot antenna;
the feed point is used for dividing the slot antenna into a long slot antenna and a short slot antenna, the long slot antenna corresponds to the first slot resonant cavity, and the short slot antenna corresponds to the second slot resonant cavity;
the long slot antenna is used for controlling the real part of the impedance of the slot antenna, and the short slot antenna is used for controlling the imaginary part of the impedance of the slot antenna.
Further, the resonant tunneling diode terahertz oscillator further comprises an MIM capacitor, a stabilizing resistor and an air bridge;
the MIM capacitor is structurally provided with an upper electrode, a dielectric layer and a lower electrode from top to bottom in sequence, and the lower electrode is connected with the first end of the resonant tunneling diode;
the first end of the air bridge is connected with the upper electrode, the second end of the air bridge is connected with the second end of the resonant tunneling diode, and the first resonant cavity and the second resonant cavity are located below the air bridge;
the first end of the stabilizing resistor is connected with the upper electrode, and the second end of the stabilizing resistor is connected with the lower electrode.
Further, the feed point of the slot antenna is determined by simultaneously matching the real part and the imaginary part of the impedance based on the resonant tunneling diode under the conjugate matching condition.
Further, the lower electrodes corresponding to the first and second gap resonators are hollowed out.
Further, the present invention also provides a circuit structure, comprising: the antenna comprises a first power supply, a first inductor, a second inductor, an MIM capacitor, a slot antenna, a resonant tunneling diode, a stabilizing resistor and a first capacitor;
the positive pole of first power with the first end of first inductance is connected, the second end of first inductance with the second inductance the stabilizing resistance with the first end of first electric capacity is connected, the second inductance with the positive pole of resonance tunneling diode is connected, the second inductance still with the first end of MIM electric capacity is connected, the second end of MIM electric capacity with the first end of slot antenna is connected, the second end of slot antenna with the negative pole of resonance tunneling diode is connected, the slot antenna still with the stabilizing resistance with the second end of first electric capacity is connected, the negative pole of first power with the stabilizing resistance with the second end of first electric capacity is connected.
Compared with the prior art, the terahertz oscillator of the resonant tunneling diode and the circuit structure thereof have the following beneficial effects:
the resonant tunneling diode is used for determining a feed point of the slot antenna, and the feed point is deviated from the center of the slot antenna; the feed point is used for dividing the slot antenna into a long slot antenna and a short slot antenna, the long slot antenna corresponds to the first slot resonant cavity, and the short slot antenna corresponds to the second slot resonant cavity; compared with the prior art, the invention meets the condition of maximum power impedance matching under the condition of meeting high-frequency oscillation, and realizes high-efficiency radiation output power.
Drawings
Fig. 1a and fig. 1b are schematic structural diagrams of an embodiment of a resonant tunneling diode terahertz oscillator provided by the present invention;
FIG. 2 is an I-V characteristic diagram of a resonant tunneling diode of a terahertz oscillation source of the resonant tunneling diode provided by the invention;
FIG. 3 is a schematic diagram of an embodiment of a circuit configuration provided by the present invention;
fig. 4a, 4b and 4c are graphs of simulation results of an embodiment of the resonant tunneling diode terahertz oscillator provided by the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Referring to fig. 1a and 1b, fig. 1a and 1b are schematic structural diagrams of an embodiment of a resonant tunneling diode terahertz oscillator provided by the present invention, as shown in fig. 1a and 1b, the structure includes: the slot antenna 10 and the resonant tunneling diode 20 are specifically as follows:
the resonant tunneling diode 20 is used to determine the feed point of the slot antenna 10, which is offset from the center of the slot antenna 10.
In this embodiment, the feed point of the slot antenna 10 is determined by simultaneously matching the real part and the imaginary part of the impedance by the resonant tunneling diode 20 based on the conjugate matching condition, and the real part and the imaginary part of the impedance are simultaneously matched under the condition that the real part and the imaginary part of the impedance are equal in value; based on the existing resonant tunneling diode device, a negative resistance I-V curve can be obtained by a semiconductor parameter analyzer, as shown in FIG. 2, wherein the peak current density is 4.8mA/um2The peak-to-valley current value difference delta I is 3.6mA, the negative resistance voltage interval delta V is 0.2V, and the junction capacitance C of the resonant tunneling diode is 5fF/um2The resistance R of the junction is 5 omega um2。
The feeding point is used to divide the slot antenna 10 into a long slot antenna 11 and a short slot antenna 12, the long slot antenna 11 corresponds to the first slot resonator 13, and the short slot antenna 12 corresponds to the second slot resonator 14.
In this embodiment, as the shorter the antenna, the higher the resonant frequency, the inductive input impedance of the slot antenna 10 is when the wavelength is less than 1/4, and the shorter the short slot antenna 12 is, the shorter the length of the slot antenna 10 is, the shorter the length satisfies the requirement that the wavelength is less than 1/4 for the slot antenna 10, so that the inductive characteristic of the input impedance is dominant, and the short slot antenna 12 is mainly used for controlling the oscillator frequency of the resonant tunneling diode 20 and for controlling the imaginary part of the impedance of the slot antenna 10.
In this embodiment, the length of the long slot antenna 11 is greater than that of the short slot antenna 12, which results in a lower resonant frequency, so that the conductance characteristic of the input impedance is dominant, and the long slot antenna 11 is mainly used for controlling the output power of the resonant tunneling diode 20 oscillator and also used for controlling the real part of the impedance of the slot antenna 10, as well as the real part of the impedance of the slot antenna 10The longer the length of the gap, the higher the radiation efficiency; the output power of the resonant tunneling diode 20 oscillator is also related to the conductance Gr provided by the slot antenna 10, the output power of the resonant tunneling diode 20 oscillator is related to Gr(a-Gr) B is proportional, where a and b are linear and nonlinear parameters of the fit, when GrThe resonant tunneling diode 20 oscillator can output maximum power as a/2.
In this embodiment, the inductance value required to be provided by the slot antenna 10 is calculated according to the required design frequency by using a formula:
where f is the oscillator frequency of the resonant tunneling diode 20, L is the inductance required to be provided by the slot antenna 10, and C is the junction capacitance of the resonant tunneling diode 20. The slot antenna 10 may be equivalent to a mirror image of a correspondingly sized dipole antenna, with an input impedance RsCan be according to the formula Rs＝(60π)2/RdWherein R isdThe impedance of the dipole antenna is obtained by looking up a table, and when the obtained imaginary part of the impedance of the dipole antenna is equal to the calculated value of 2 pi fL, the corresponding size of the dipole antenna is the size of the short slot antenna 12; meanwhile, when the real part of the acquired impedance of the dipole antenna is equal to the calculated value of 2 pi fL, the size corresponding to the dipole antenna is the size of the long-slot antenna 11.
In this embodiment, the long slot antenna 11 and the short slot antenna 12 are optimized and designed mainly by full-wave electromagnetic simulation software HFSS, and in the process of full-wave simulation, the performance is further optimized by electromagnetic coupling analysis and taking into account the coupling parasitic effect generated by coupling the long slot antenna 11 and the short slot antenna 12,
referring to fig. 1a and 1b, fig. 1a and 1b are schematic structural diagrams of an embodiment of a resonant tunneling diode terahertz oscillator provided by the present invention, as shown in fig. 1a and 1b, the structure further includes an MIM capacitor 30, a stabilizing resistor 40, and an air bridge 50, specifically as follows:
in this embodiment, the MIM capacitor 30 has a structure including, in order from top to bottom, an upper electrode 31, a dielectric layer 32, and a lower electrode 33, the lower electrode 33 being connected to a first end of the resonant tunneling diode 20; a first end of the air bridge 50 is connected with the upper electrode 31, a second end of the air bridge 50 is connected with a second end of the resonant tunneling diode 20, and the first gap resonant cavity 13 and the second gap resonant cavity 14 are located below the air bridge 50; hollowing the lower electrodes 33 corresponding to the first and second slot resonant cavities 13 and 14; a first end of the stabilizing resistor 40 is connected with the upper electrode 31, and a second end of the stabilizing resistor 40 is connected with the lower electrode 33; the upper electrode 31, the lower electrode 32, and the stabilization resistor are provided on the GaAs substrate.
As another example of this embodiment, according to different device models and frequency band requirements of different users, full-wave electromagnetic simulation software HFSS can be used to perform optimization and design a suitable antenna structure; in particular, when the design goal is to achieve high power output at a frequency of 500GHz, the area of the resonant tunneling diode is 3.66um2The peak current density is 4mA/um2The peak-to-valley current ratio is 4, the long slot antenna 11 is 64um, the short slot antenna 12 is 16um, the corresponding offset degree is 0.8, the MIM capacitor takes 20pF, the stabilizing resistor 40 is 15 ohm, the simulation result is that the output power of the resonant tunneling diode is 600uW, the actual radiation power is the output power × the radiation efficiency of the resonant tunneling diode, at this time, the radiation efficiency is 60%, and therefore the radiation power is 360 uW.
Referring to fig. 3, fig. 3 is a schematic structural diagram of an embodiment of a circuit structure provided by the present invention, and as shown in fig. 3, the circuit structure includes: the first power supply 8, the first inductor 1, the second inductor 2, the MIM capacitor 30, the slot antenna 10, the resonant tunneling diode 20, the stabilizing resistor 40, and the first capacitor 4 are as follows:
in this embodiment, an anode of the first power supply 8 is connected to a first end of the first inductor 1, a second end of the first inductor 1 is connected to a first end of the second inductor 2, the stabilizing resistor 40 and the first capacitor 4 are in a parallel structure, the second inductor 2 is connected to an anode of the resonant tunneling diode 20, the second inductor 2 is further connected to a first end of the MIM capacitor 30, a second end of the MIM capacitor 30 is connected to a first end of the slot antenna 10, a second end of the slot antenna 10 is connected to a cathode of the resonant tunneling diode 20, the slot antenna 10 is further connected to a second end of the stabilizing resistor 40 and the first capacitor 4, and a cathode of the first power supply 8 is connected to the stabilizing resistor 40 and a second end of the first capacitor 4.
Referring to fig. 4a, 4b and 4c, fig. 4a, 4b and 4c are simulation result diagrams of an embodiment of a resonant tunneling diode terahertz oscillator provided by the present invention, as shown in fig. 4a, fig. 4a is a simulation result diagram of a slot antenna oscillator based on a resonant tunneling diode device model, as shown in fig. 4b, fig. 4b is a simulation result diagram of a relationship between an area of a resonant tunneling diode device and an oscillation frequency of the oscillator, as shown in fig. 4c, and fig. 4c is a simulation result diagram of a change in output power and frequency of a resonant tunneling diode.
In this embodiment, a slot antenna oscillator simulation result diagram based on the resonant tunneling diode device model uses the oscillation frequency of a center-fed oscillator as an abscissa and the radiation efficiency of a slot antenna as an ordinate, and tests the radiation efficiency of the slot antenna presented when slot antennas with different lengths are at different frequencies, and as can be seen from fig. 4a, the larger the slot length of the slot antenna is, the higher the radiation efficiency thereof is.
In this embodiment, a simulation result diagram of a relationship between an area of the resonant tunneling diode device and an oscillation frequency of the oscillator is that the area of the resonant tunneling diode device is taken as an abscissa and an oscillation frequency of the oscillator fed by the center is taken as an ordinate, and in fig. 4b, a dotted line part of an abscissa is an oscillation frequency of the oscillator corresponding to the length of the short slot antenna when the length is 28 nm; meanwhile, under the condition of a fixed long slot length, the oscillator oscillation frequency of the slot antenna with different polarization degrees under the condition of different areas of the resonant tunneling diode device is tested, and as can be seen from fig. 4b, when the offset feed degree of the slot antenna is increased, the oscillation frequency is increased and can even exceed the resonant frequency of the short slot antenna with 28 um.
In this embodiment, the graph of the simulation result of the output power and the frequency change of the resonant tunneling diode is obtained by taking the oscillation frequency of the oscillator as the abscissa and the output power of the resonant tunneling diode as the ordinate, and testing the relationship between the slot antennas with different bias feeding degrees and the oscillation frequency of the oscillator and the output power of the resonant tunneling diode.
In summary, the present invention provides a resonant tunneling diode terahertz oscillator and a circuit structure thereof, including: a slot antenna and a resonant tunneling diode; the resonant tunneling diode is used for determining a feeding point of the slot antenna, and the feeding point is deviated from the center of the slot antenna; the feed point is used for dividing the slot antenna into a long slot antenna and a short slot antenna, the long slot antenna corresponds to the first slot resonant cavity, and the short slot antenna corresponds to the second slot resonant cavity; the length of the long slot antenna is greater than the length of the short slot antenna; compared with the prior art, the invention meets the condition of maximum power impedance matching under the condition of meeting high-frequency oscillation, and realizes high-efficiency radiation output power.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and substitutions can be made without departing from the technical principle of the present invention, and these modifications and substitutions should also be regarded as the protection scope of the present invention.
Claims (5)
1. A resonant tunneling diode terahertz oscillator is characterized by comprising: a slot antenna and a resonant tunneling diode;
the resonant tunneling diode is used for determining a feeding point of the slot antenna, and the feeding point is deviated from the center of the slot antenna;
the feed point is used for dividing the slot antenna into a long slot antenna and a short slot antenna, the long slot antenna corresponds to the first slot resonant cavity, and the short slot antenna corresponds to the second slot resonant cavity;
the long slot antenna is used for controlling the real part of the impedance of the slot antenna, and the short slot antenna is used for controlling the imaginary part of the impedance of the slot antenna.
2. A resonant tunneling diode terahertz oscillator according to claim 1, further comprising an MIM capacitor, a stabilization resistor and an air bridge;
the MIM capacitor is structurally provided with an upper electrode, a dielectric layer and a lower electrode from top to bottom in sequence, and the lower electrode is connected with the first end of the resonant tunneling diode;
the first end of the air bridge is connected with the upper electrode, the second end of the air bridge is connected with the second end of the resonant tunneling diode, and the first resonant cavity and the second resonant cavity are located below the air bridge;
the first end of the stabilizing resistor is connected with the upper electrode, and the second end of the stabilizing resistor is connected with the lower electrode.
3. A resonant tunneling diode terahertz oscillator according to claim 1, wherein the feeding point of the slot antenna is determined by matching the real part and the imaginary part of the impedance of the resonant tunneling diode simultaneously based on conjugate matching.
4. The terahertz oscillator of claim 2, wherein the lower electrodes corresponding to the first and second slot resonators are hollowed out.
5. A circuit arrangement, characterized in that the circuit arrangement comprises: a first power supply, a first inductor, a second inductor, an MIM capacitor, a slot antenna, a resonant tunneling diode, a stabilizing resistor and a first capacitor, wherein the circuit structure is suitable for the resonant tunneling diode terahertz oscillator of any one of claims 1 to 4;
the positive pole of first power with the first end of first inductance is connected, the second end of first inductance with the second inductance the stabilizing resistance with the first end of first electric capacity is connected, the second inductance with the positive pole of resonance tunneling diode is connected, the second inductance still with the first end of MIM electric capacity is connected, the second end of MIM electric capacity with the first end of slot antenna is connected, the second end of slot antenna with the negative pole of resonance tunneling diode is connected, the slot antenna still with the stabilizing resistance with the second end of first electric capacity is connected, the negative pole of first power with the stabilizing resistance with the second end of first electric capacity is connected.
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| CN202110707842.0A CN113540807B (en) | 2021-06-24 | 2021-06-24 | Resonant tunneling diode terahertz oscillator and circuit structure thereof |
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| CN202110707842.0A CN113540807B (en) | 2021-06-24 | 2021-06-24 | Resonant tunneling diode terahertz oscillator and circuit structure thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594821A (en) * | 2013-11-27 | 2014-02-19 | 天津工业大学 | Dual-slot antenna based on resonant tunneling mechanism |
| US20170155361A1 (en) * | 2014-05-08 | 2017-06-01 | Tokyo Institute Of Technology | Frequency-variable terahertz oscillator and method for manufacturing the same |
| CN109075744A (en) * | 2016-04-28 | 2018-12-21 | 佳能株式会社 | element |
| CN112635960A (en) * | 2019-09-24 | 2021-04-09 | 佳能株式会社 | Device and method for manufacturing device |
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2021
- 2021-06-24 CN CN202110707842.0A patent/CN113540807B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594821A (en) * | 2013-11-27 | 2014-02-19 | 天津工业大学 | Dual-slot antenna based on resonant tunneling mechanism |
| US20170155361A1 (en) * | 2014-05-08 | 2017-06-01 | Tokyo Institute Of Technology | Frequency-variable terahertz oscillator and method for manufacturing the same |
| CN109075744A (en) * | 2016-04-28 | 2018-12-21 | 佳能株式会社 | element |
| CN112635960A (en) * | 2019-09-24 | 2021-04-09 | 佳能株式会社 | Device and method for manufacturing device |
Non-Patent Citations (1)
| Title |
|---|
| SHUYA IWAMATSU: "Terahertz coherent oscillator integrated with slot-ring antenna using two resonant tunneling diodes", 《APPLIED PHYSICS EXPRESS 14》, 29 January 2021 (2021-01-29), pages 1 - 5 * |
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