CN113497079A - Light emitting device - Google Patents
Light emitting device Download PDFInfo
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- CN113497079A CN113497079A CN202010411352.1A CN202010411352A CN113497079A CN 113497079 A CN113497079 A CN 113497079A CN 202010411352 A CN202010411352 A CN 202010411352A CN 113497079 A CN113497079 A CN 113497079A
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- circuit pattern
- pattern layer
- emitting device
- light
- light emitting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
The invention provides a light-emitting device which comprises a glass substrate, a first circuit pattern layer, a first patterned insulating layer, a second circuit pattern layer and a plurality of light-emitting elements. The glass scale bottom has an upper surface. The first circuit pattern layer is arranged on the upper surface. The first patterned insulating layer is disposed on the upper surface. The first patterned insulating layer partially covers the first circuit pattern layer. The second circuit pattern layer is arranged on the upper surface. A portion of the second circuit pattern layer overlaps the first circuit pattern layer. The light-emitting element is electrically connected with the first circuit pattern layer and the second circuit pattern layer. The second circuit pattern layer is overlapped with the first circuit pattern layer and the first patterned insulating layer is arranged between the second circuit pattern layer and the first circuit pattern layer. The first circuit pattern layer has a first voltage. The second circuit pattern layer has a second voltage. The first voltage is different from the second voltage.
Description
Technical Field
The present disclosure relates to light emitting devices, and particularly to a light emitting device suitable for a glass bottom.
Background
With the improvement of light-emitting efficiency of light-emitting diode (LED) dies and the improvement of production technology, LED dies have become the mainstream of lighting and display fields. For example, submillimeter LED Display devices (Mini LED Display) and Micro LED Display devices (Micro LED Display) gradually attract the investment of various technical plants. The sub-millimeter or micro light emitting diode display device has the advantages of high color saturation, high response speed, high contrast, low energy consumption and long service life of materials.
However, the Printed Circuit Board (PCB) for die transposition has low flatness, and it is difficult to meet the requirement of large-area transfer, and it is impossible to fabricate fine circuit patterns. In addition, the LED dies disposed with high density generate a large amount of heat energy during operation. Therefore, a circuit board with excellent heat dissipation and capable of manufacturing high-definition circuits is needed.
Disclosure of Invention
The present invention is directed to a light emitting device having a fine circuit pattern and an excellent heat dissipation effect.
According to an embodiment of the present invention, a light emitting device includes a glass substrate, a first circuit pattern layer, a first patterned insulating layer, a second circuit pattern layer, and a plurality of light emitting elements. The glass scale bottom has an upper surface. The first circuit pattern layer is arranged on the upper surface of the glass scale bottom. The first patterned insulating layer is disposed on the upper surface and partially covers the first circuit pattern layer. The second circuit pattern layer is arranged on the upper surface, and part of the second circuit pattern layer is overlapped with the first circuit pattern layer. The light emitting element is electrically connected with the first circuit pattern layer and the second circuit pattern layer respectively. The second circuit pattern layer is overlapped with the first circuit pattern layer and the first patterned insulating layer is arranged between the second circuit pattern layer and the first circuit pattern layer. The first circuit pattern layer has a first voltage. The second circuit pattern layer has a second voltage. The first voltage is different from the second voltage.
In the light emitting device according to the embodiment of the invention, the first circuit pattern layer includes a first main body portion and a plurality of first electrode portions connected to the first main body portion. The second circuit pattern layer includes a plurality of circuit lines. At least one of the circuit lines includes a second body portion and a second electrode portion connected to the second body portion.
In the light emitting device according to the embodiment of the present invention, the first body portion and the second body portion are partially overlapped at different levels. The first body portion extends in a first direction. The second body portion extends along a second direction. The first direction is perpendicular to the second direction.
In the light emitting device according to the embodiment of the invention, the first patterned insulating layer includes a plurality of first openings. The openings are respectively overlapped and expose the first electrode part.
In the light emitting device according to the embodiment of the invention, the second circuit pattern layer does not overlap the first openings.
In the light emitting device according to an embodiment of the present invention, the light emitting device further includes a second patterned insulating layer disposed on the second circuit pattern layer. The second patterned insulating layer includes a plurality of second openings. One of the second openings overlaps and exposes the second electrode portion.
In the light emitting device according to the embodiment of the invention, the second patterned insulating layer further includes a plurality of third openings. The third openings correspondingly overlap the first openings.
In the light emitting device according to the embodiment of the invention, the first circuit pattern layer includes at least one first electrode portion. The second circuit pattern layer comprises a plurality of second electrode parts and a plurality of bridging parts connected with the second electrode parts. The first electrode portion and the second electrode portion are coplanar. The extending direction of the first electrode portion extends along the first direction. The connection direction of the second electrode portions extends along the second direction. The first direction is perpendicular to the second direction.
In the light emitting device according to the embodiment of the invention, any one of the bridging portions is electrically connected to any two adjacent second electrode portions. The bridge portion correspondingly overlaps portions of the first patterned insulating layer to correspondingly straddle any one of the first electrode portions.
In the light emitting device according to the embodiment of the present invention, the glass substrate includes one selected from the group consisting of a nano-calcium silicate glass substrate, an aluminosilicate glass substrate, a borosilicate glass substrate, a lead silicate glass substrate, and a sapphire substrate.
In view of the above, since the light emitting device of the embodiment of the invention has the glass substrate with high surface flatness, the first circuit pattern layer and the second circuit pattern layer with high fineness can be manufactured on the glass substrate by the photolithography and etching process. Therefore, the density of the circuit layout can be further improved, and the light-emitting device can meet the requirements of high resolution or high brightness. In addition, the glass bottom of the light-emitting device can effectively and excellently dissipate heat energy generated by the light-emitting element during operation. Therefore, the efficiency of the light-emitting device can be further improved.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and together with the description serve to explain the principles of the invention.
Fig. 1A is a schematic top view of a portion of a light-emitting device according to an embodiment of the invention;
FIG. 1B is a schematic cross-sectional view of section line A-A' of FIG. 1A;
FIG. 2 is a schematic top view of a portion of a light-emitting device according to another embodiment of the invention;
FIG. 3 is a schematic cross-sectional view of a light-emitting device according to another embodiment of the present invention;
FIG. 4A is a schematic top view of a portion of a light-emitting device according to yet another embodiment of the invention;
FIG. 4B is a schematic cross-sectional view of section line B-B' of FIG. 4A;
FIG. 4C is a schematic cross-sectional view of section line C-C' of FIG. 4A.
Description of the reference numerals
10. 10A, 10B, 10C a light emitting device;
100, weighing glass as a bottom;
101, an upper surface;
120. 120A, 120B, 120C, a first circuit pattern layer;
121C, 124A: a first electrode section;
122. 122A a first body portion;
130B a third circuit pattern layer;
140. 140B, 140C a first patterned insulating layer;
142. 142B a first opening;
150B a fourth circuit pattern layer;
160. 160A, 160B, 160C the second circuit pattern layer;
161. 161A a first circuit line;
1614. 1614A, 1624A, 1634A, 161C, 162C, a second electrode portion;
1612. 1612A, 1622A, 1632A a second body portion;
162. 162A a second circuit line;
163. 163A a third circuit line;
163C, bridge;
180. 180B a second patterned insulating layer;
182. 182B, a second opening;
184. 184B, a third opening;
191 a first conductive structure;
192, a second conductive structure;
200 a light emitting element;
210 a first light emitting element;
201. 211, 221, 231, a first contact;
202. 212, 222, 232 a second contact;
220 a second light emitting element;
230: a third light emitting element;
320B, a third patterned insulating layer;
322B a fourth opening;
324B, a fifth opening;
340B, a fourth patterned insulating layer;
342B a sixth opening;
344B, a seventh opening;
A-A ', B-B ', C-C ' is section line;
d1, D3, a first direction;
d2, D4 is the second direction;
m, M +1, M +2, M +3, straight going;
n, N +1, N +2, horizontal row;
v1 through hole.
Detailed Description
Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
Some embodiments are listed below and described in detail with reference to the attached drawings, but the embodiments are not provided to limit the scope of the present invention. In addition, the drawings are for illustrative purposes only and are not drawn to scale. For ease of understanding, like elements in the following description will be described with like reference numerals.
Fig. 1A is a schematic top view of a portion of a light emitting device according to an embodiment of the invention. FIG. 1B is a schematic cross-sectional view of section line A-A' of FIG. 1A. Fig. 1A and 1B omit some layers or elements for clarity and convenience of illustration. Referring to fig. 1A and 1B, the light emitting device 10 of the present embodiment includes a glass substrate 100, a first circuit pattern 120 disposed on the glass substrate 100, a first patterned insulating layer 140 disposed on the glass substrate 100, a second circuit pattern layer 160 disposed on the glass substrate 100, and a plurality of light emitting elements 200 electrically connected to the first circuit pattern layer 120 and the second circuit pattern layer 160, respectively. In the present embodiment, the first circuit pattern layer 120 and the second circuit pattern layer 160 have a first voltage and a second voltage, respectively, and the first voltage and the second voltage are different. Under the above arrangement, the light emitting device 10 of the present embodiment can arrange the first circuit pattern 120 and the second circuit pattern 160 on the glass substrate 100 by using a fine line manufacturing process. In addition, the glass bottom 100 can effectively and excellently dissipate heat generated by the light emitting device 200 during operation. In some embodiments, the light emitting device 10 is applied as a backlight module (BLM) of an LED light source, for example: the backlight module is used as a backlight module of the liquid crystal display panel. In other embodiments, the light emitting device 10 is applied as an LED display panel (LED display panel), for example: the display panel is suitable for outdoor large display panels or indoor and outdoor high-brightness display panels. However, the invention is not limited thereto.
Referring to fig. 1A and 1B, the light emitting device 10 includes a glass substrate 100. The glass scale base 100 has an upper surface 101. In the present embodiment, the glass substrate 100 includes one selected from the group consisting of a soda-lime-silicate glass substrate, an aluminosilicate glass substrate, a borosilicate glass substrate, a lead-silicate glass substrate, and a sapphire substrate, but not limited thereto. For example, soda-lime silicate glass is also known as soda-lime glass. Soda-lime glass is a material which contains silica as a basic component and sodium oxide and calcium oxide in a specific ratio. Soda-lime-silicate glass is the glass system with the longest production history and is the glass with the highest production and the widest application nowadays, and has the advantage of cost.
In the present embodiment, the first circuit pattern layer 120 is disposed on the upper surface 101 of the glass substrate 100. The first circuit pattern layer 120 includes a first body portion 122 and a plurality of first electrode portions 124 connected to the first body portion 122. In the present embodiment, the first electrode portion 124 and the first body portion 122 are integrally formed, for example, such that the first electrode portion 124 is substantially a part of the first body portion 122. As shown in FIG. 1A, the first body portion 122 extends along a first direction D1 (e.g., a left-to-right direction in FIG. 1A).
The material of the first circuit pattern layer 120 is, for example, a conductive material, including a metal material. The metal material may be, for example, titanium, copper, nickel, palladium, gold, silver, or aluminum, but the invention is not limited thereto. In other embodiments, the material of the first circuit pattern layer 120 may also be an alloy of the above metals.
Since the first circuit pattern layer 120 is disposed on the flat surface of the glass substrate 100, the first circuit pattern layer 120 with high fineness can be manufactured by photolithography and etching processes. For example, the first circuit pattern layer 120 is, for example, a high-fineness signal line with a line width of 30 to 800 micrometers, but not limited thereto.
In the present embodiment, the first patterned insulating layer 140 is disposed on the upper surface 101 of the glass substrate 100. The first patterned insulating layer 140 at least partially covers the first circuit pattern layer 120. As shown in fig. 1A and 1B, the first patterned insulating layer 140 includes a plurality of first openings 142. The first opening 142 overlaps and exposes the first electrode part 124 of the first circuit pattern layer 120. In another aspect, a portion of the first circuit pattern layer 120 where the first opening 142 overlaps and exposes may be defined as the first electrode part 124.
The material of the first patterned insulating layer 140 is, for example, an inorganic insulating material, an organic insulating material, or a combination thereof. For example, the inorganic insulating material may be silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof; the organic insulating material may be a polymer material such as polyimide resin, epoxy resin or acryl resin, but the invention is not limited thereto.
In the present embodiment, the second circuit pattern layer 160 is disposed on the upper surface 101 of the glass substrate 100. For example, the second circuit pattern layer 160 is disposed on the first patterned insulating layer 140, and a portion of the second circuit pattern layer 160 overlaps the first circuit pattern layer 120. As shown in fig. 1B, in a portion where the second circuit pattern layer 160 overlaps the first circuit pattern layer 120, a portion of the first patterned insulating layer 140 is interposed between the first circuit pattern 120 and the second circuit pattern 160. In this embodiment, the material of the second circuit pattern is, for example, a conductive material, including a metal material. The metal material may be, for example, titanium, copper, nickel, palladium, gold, silver, or aluminum, but the invention is not limited thereto. In other embodiments, the material of the second circuit pattern layer 160 may also be an alloy of the above metals.
In detail, the second circuit pattern layer 160 of the present embodiment includes a plurality of circuit lines, such as a first circuit line 161, a second circuit line 162, and a third circuit line 163. The first circuit line 161, the second circuit line 162 and the third circuit line 163 are disposed in parallel with each other and vertically staggered with respect to the first body portion 122 of the first circuit pattern layer 120.
In more detail, taking the first circuit line 161 as an example, the first circuit line 161 includes a second body portion 1612 and a second electrode portion 1614 connected to the second body portion 1612. In the present embodiment, the second electrode portion 1614 and the second body portion 1612 are provided, for example, integrally formed, and the second electrode portion 1614 is substantially a part of the second body portion 1612. As shown in fig. 1A, the second body portion 1612 extends in a second direction D2 (e.g., upward to downward in fig. 1A). In the present embodiment, the first direction D1 is perpendicular to the second direction D2. In this way, the first body portion 122 and the second body portion 1612 are staggered and partially overlapped at different levels, but not limited thereto.
Further, the second body portion 1612 of the first circuit line 161 does not yet overlap the first opening 142. That is, when the second circuit pattern layer 160 is disposed, the first opening 142 of the first patterned insulating layer 140 is avoided, so that the second circuit pattern layer 160 does not overlap the first opening 142. Thus, the signal of the first circuit pattern layer 120 can be extracted in the subsequent process.
In the present embodiment, the second circuit line 162 of the second circuit pattern layer 160 includes a second main portion 1622 and a second electrode portion 1624 connected to the second main portion 1622. The third circuit line 163 of the second circuit pattern layer 160 includes a second body portion 1632 and a second electrode portion 1634 connected to the second body portion 1632. The second circuit line 162 and the third circuit line 163 are disposed in a manner similar to the first circuit line 161, and therefore are not described again.
Since the second circuit pattern layer 160 is disposed on the glass substrate 100 and the flat surface of the first patterned insulating layer 140, the second circuit pattern layer 160 with high fineness can be manufactured by photolithography and etching processes. For example, the second circuit pattern layer 160 is, for example, a high-fineness signal line with a line width of 30 to 800 micrometers, but not limited thereto.
In the present embodiment, the light emitting device 10 further includes a second patterned insulating layer 180. The second patterned insulating layer 180 is disposed on the second circuit pattern layer 160. As shown in fig. 1A and 1B, the second patterned insulating layer 180 includes a plurality of second openings 182. One of the second openings 182 overlaps and exposes the second electrode portion 1614 of the first circuit line 161 of the second circuit pattern layer 160. From another perspective, a portion of the first circuit line 161 where the second opening 182 overlaps and is exposed may be defined as the second electrode portion 1614.
In the present embodiment, the other second openings 182 may overlap and expose the second electrode portion 1624 of the second circuit line 162 and the second electrode portion 1634 of the third circuit line 163, respectively. The second opening 182 may be applied as a contact window (contact window) to draw out a signal of the second circuit pattern layer 160.
In the present embodiment, the second patterned insulating layer 180 further includes a plurality of third openings 184. These third openings 184 overlap the plurality of first openings 142. In the present embodiment, the first opening 142 and the third opening 184 may be aligned and overlapped to form a contact window having a continuous sidewall, but the invention is not limited thereto. In fact, the first opening 142 and the third opening 184 only need to be overlapped with each other to form a contact window exposing the first circuit pattern layer 120, which can achieve the effect of extracting the signal of the first circuit pattern layer 120 according to the present invention.
The second patterned insulating layer 180 is made of an inorganic insulating material, an organic insulating material, or a combination thereof. For example, the inorganic insulating material may be silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof; the organic insulating material may be a polymer material such as polyimide resin, epoxy resin or acryl resin, but the invention is not limited thereto.
In some embodiments, the material of the second patterned insulating layer 180 may further include a reflective insulating material, such as: transparent ink mixed with titanium dioxide particles, transparent acrylic photoresist or transparent silicon photoresist. In other embodiments, the material of the second patterned insulating layer 180 may further include an absorption type insulating material, such as: ink mixed with carbon particles, acryl-based photoresist or silicon-based photoresist. Thus, the light emitting device 10 may have good light extraction efficiency when applied as a backlight module, or may have good display contrast when applied as a display panel.
In the present embodiment, a plurality of conductive structures may be disposed on the first circuit pattern 120 or the second circuit pattern 160 to serve as contact pads (contact pads). For example, the first conductive structure 191 may be disposed in the contact window formed in the first opening 142 and the third opening 184 and contact the first electrode portion 124. The second conductive structure 192 may be disposed in the contact window formed by the second opening 182 and contact the second electrode portion 1614, the second electrode portion 1624, and/or the second electrode portion 1634. Thus, the first conductive structure 191 and the second conductive structure 192 can be electrically connected to the first circuit pattern layer 120 and the second circuit pattern layer 160, respectively.
The material of the first conductive structure 191 and the second conductive structure 192 is, for example, a conductive material, including but not limited to, a solder paste, a copper paste, or a silver paste.
In the present embodiment, the first circuit pattern layer 120 may have a first voltage greater than a second voltage of the second circuit pattern layer 160. That is, the first conductive structure 191 is, for example, an anode (anode), and the second conductive structure 192 is, for example, a cathode (cathode), so that a current flows from the first circuit pattern layer 120 to the second circuit pattern layer 160 through the light emitting element 200, but the invention is not limited thereto.
In the present embodiment, a plurality of light emitting elements 200 are disposed on the second patterned insulating layer 180. The light emitting element 200 is, for example, a submillimeter light emitting diode (Mini LED) or a micro LED (micro LED). As shown in fig. 1A and 1B, the light emitting device 200 includes a first light emitting device 210, a second light emitting device 220, and a third light emitting device 230. Taking the first light emitting device 210 as an example, the first light emitting device 210 includes a first contact 211 and a second contact 212. The first contact 211 is electrically connected to the first conductive structure 191. The second contact 212 is electrically connected to the second conductive structure 192. Under the above arrangement, the first light emitting device 210 can be electrically connected to the first circuit pattern layer 120 and the first circuit line 161 of the second circuit pattern layer 160.
In the present embodiment, the second light emitting element 220 is electrically connected to the first circuit pattern layer 120 through the first contact 221, and is electrically connected to the second circuit line 162 of the second circuit pattern layer 160 through the second contact 222. The third light emitting element 230 is electrically connected to the first circuit pattern layer 120 through a first contact 231 and electrically connected to the third circuit line 163 of the second circuit pattern layer 160 through a second contact 232. With the above arrangement, the light emitting device 200 can accommodate more and more complex circuit layouts per unit area by arranging multiple layers of circuits at different levels. Thus, the layout density of the circuit of the light emitting device 10 can be increased, so that the light emitting device 10 has a small volume and a high resolution and excellent quality.
It is noted that the surface flatness of the double-sided circuit layer printed circuit board is not good, and thus a circuit pattern with high fineness cannot be formed. The light emitting device 10 of the present embodiment has the glass substrate 100 with high surface flatness, so that the first circuit pattern layer 120 with high fineness can be formed on the upper surface 101 of the glass substrate 100 by photolithography and etching processes. Then, a second circuit pattern layer 160 with high fineness is formed on the flat first patterned insulation layer 140 on the glass substrate 100 by photolithography and etching processes. Under the above configuration, the first patterned insulating layer 140 and the second circuit pattern layer 160 can achieve a high-definition requirement that the line width is less than 100 μm, so as to further increase the density of the circuit layout, and the light emitting device 10 can be applied to a high-resolution (e.g., 4K or 8K display technology) display device or a backlight module with a high-brightness requirement.
In addition, the glass bottom 100 of the light emitting device 10 can effectively and excellently dissipate heat generated by the light emitting element 200 during operation. Therefore, the performance of the light emitting device 10 can be further improved.
It should be noted that, in the following embodiments, the reference numerals and partial contents of the elements in the foregoing embodiments are used, wherein the same reference numerals are used to indicate the same or similar elements, and the description of the portions with the same technical contents omitted may refer to the foregoing embodiments, and the description in the following embodiments is not repeated.
Fig. 2 is a schematic partial top view of a light-emitting device according to another embodiment of the invention. Fig. 2 omits to show portions of the film layers or elements for clarity and ease of illustration. Referring to fig. 1A and fig. 2, a light emitting device 10A of the present embodiment is similar to the light emitting device 10 of fig. 1A, and the main differences are: the positions of the light emitting units 200 and the corresponding patterns of the first circuit pattern layer 120A and the second circuit pattern layer 160A. Specifically, in the present embodiment, the first main body portion 122A of the first circuit pattern 120A extends along the first direction D1, and the plurality of first electrode portions 124A extend from the first main body portion 122A to the second direction D2, or extend to the second direction D2 and then are disposed parallel to the first main body portion 122A to form a branch. The first electrode portions 124A partially overlap the contact windows formed by the first openings 142 and the third openings 184 and are exposed by the contact windows.
The second circuit pattern 160A includes a first circuit line 161A, a second circuit line 162A, and a third circuit line 163A. The second body portion 1612A of the first circuit line 161A is parallel to the second body portion 1622A of the second circuit line 162A and the second body portion 1632A of the third circuit line 163A. The second body portion 1612A, the second body portion 1622A, and the second body portion 1632A extend along the second direction D2. The second electrode portion 1614A extends from the second body portion 1612A in the first direction D1. The second electrode portion 1634A extends from the second body portion 1632A in the first direction D1. The second electrode portion 1614A and the second electrode portion 1634A overlap the two different second openings 182, respectively, and are exposed by the two second openings 182. In the present embodiment, the first light emitting element 210 is electrically connected to the first electrode portion 124A and the second electrode portion 1614A. The third light emitting element 230 is electrically connected to the first electrode portion 124A and the second electrode portion 1634A.
As shown in fig. 2, in the second direction D2, since the first circuit line 161A is provided between the second main body portion 1622A and the second electrode portion 1624A of the second circuit line 162A, the second electrode portion 1624A cannot be directly connected to the second main body portion 1622A. The second circuit line 162A of the present embodiment crosses the first circuit line 161A through the second electrode portion 1624A disposed on the same layer as the first circuit pattern layer 120A.
Specifically, the second electrode portion 1624A is disposed coplanar with the first circuit pattern layer 120A. In this way, the ends of the second electrode portion 1624A may be electrically connected to each other through the through hole V1 at a position overlapping the second main body portion 1622A. The other end of the second electrode portion 1624A overlaps the second opening 182 and is exposed by the second opening 182. Under the above arrangement, the second circuit line 162A can cross the first circuit line 161A through the second electrode portion 1624A disposed at the same time when the first circuit pattern layer 120A is disposed, so as to achieve the technical effect of connecting the second light emitting element 220 disposed subsequently to the second main body portion 1622A. Therefore, the present embodiment can complete the circuit layout without additionally disposing a circuit layer, thereby simplifying the manufacturing process.
In the present embodiment, the second light emitting element 220 is electrically connected to the first electrode portion 124A and the second electrode portion 1624A. With the above arrangement, the light emitting device 10A of the present embodiment has an increased layout margin by arranging a plurality of layers of lines at different levels, in addition to accommodating more and more complicated wiring layout per unit area. Further, the light emitting device 10A can also obtain the same effects as the above-described embodiment.
Fig. 3 is a schematic cross-sectional view of a light-emitting device according to still another embodiment of the present invention. Referring to fig. 1B and fig. 3, a light emitting device 10B of the present embodiment is similar to the light emitting device 10 of fig. 1B, and the main differences are: the light emitting device 10B of the present embodiment has a structure with four circuit layers, for example, but the number of the circuit layers is not limited thereto. Specifically, the light emitting device 10B includes a glass substrate 100, a first circuit pattern layer 120B, a first patterned insulating layer 140B, a second circuit pattern layer 160B, a second patterned insulating layer 180B, a third circuit pattern layer 130B, a third patterned insulating layer 320B, a fourth circuit pattern layer 150B, and a fourth patterned insulating layer 340B. The materials of the third circuit pattern layer 130B and the fourth circuit pattern layer 150B are similar to the materials of the first circuit pattern layer 120B and the second circuit pattern layer 160B, and thus are not repeated. The materials of the third patterned insulating layer 320B and the fourth patterned insulating layer 340B are similar to the materials of the first patterned insulating layer 140B and the second patterned insulating layer 180B, and thus are not repeated herein.
In this embodiment, a portion of the first circuit pattern layer 120B may also be exposed outside the first patterned insulating layer 140B. In addition, a portion of the second circuit pattern layer 160B may also be exposed outside the second patterned insulating layer 180B. As such, the first circuit pattern layer 120B and the second circuit pattern layer 160B can be applied as signal contacts, but not limited thereto.
In the present embodiment, the third circuit pattern layer 130B is disposed on the second patterned insulating layer 180B, and the third circuit pattern layer 130B does not overlap the second opening 182B. The third circuit pattern layer 130B may also be disposed in the first opening 142B and the third opening 184B to electrically connect to the first circuit pattern layer 120B.
The third patterned insulating layer 320B is disposed on the third circuit pattern layer 130B, and has a plurality of fourth openings 322B overlapping and exposing the third circuit pattern layer 130B. In addition, the third patterned insulating layer 320B further includes a plurality of fifth openings 324B. The fifth opening 324B correspondingly overlaps the second opening 182B.
The fourth circuit pattern layer 150B is disposed on the third patterned insulating layer 320B, and the fourth circuit pattern layer 150B does not overlap the fourth opening 322B. The fourth circuit pattern layer 150B may also be disposed in the second opening 182B and the fifth opening 324B to electrically connect to the second circuit pattern layer 160B.
The fourth patterned insulating layer 340B is disposed on the fourth circuit pattern layer 150B, and has a plurality of sixth openings 342B overlapping and exposing the fourth circuit pattern layer 150B. In addition, the fourth patterned insulating layer 340B further includes a plurality of seventh openings 344B. The seventh opening 344B correspondingly overlaps the fourth opening 322B.
Under the above arrangement, the first conductive structure 191 may be disposed in the fourth opening 322B and the seventh opening 344B and contact the third circuit pattern layer 130B to electrically connect the first circuit pattern layer 120B. The second conductive structure 192 may be disposed in the sixth opening 342B and contact the fourth circuit pattern layer 150B to electrically connect the second circuit pattern layer 160B. Thus, the light emitting devices 200 (including the first light emitting device 210, the second light emitting device 220, and the third light emitting device 230) can be disposed on the first conductive structure 191 and the second conductive structure 192, and can accommodate more and more complicated circuit layouts by means of multiple circuit layers with different levels. Thus, the layout density of the circuit of the light emitting device 10B can be increased, so that the light emitting device 10B has a small volume and a high resolution and excellent quality. Further, the light emitting device 10B can also obtain the same effects as the above-described embodiment.
Fig. 4A is a schematic top view of a part of a light-emitting device according to still another embodiment of the invention. Fig. 4A omits to show portions of the film layers or elements for clarity and ease of illustration. FIG. 4B is a cross-sectional view of section line B-B' of FIG. 4A. FIG. 4C is a schematic cross-sectional view of section line C-C' of FIG. 4A. Referring to fig. 4A and fig. 1A, a light emitting device 10C of the present embodiment is similar to the light emitting device 10 of fig. 1A, and the main differences are: the first circuit pattern layer 120C is coplanar with at least a portion of the second circuit pattern layer 160C.
For example, the first circuit pattern layer 120C of the light emitting device 10C includes a plurality of first electrode portions 121C disposed on the glass substrate 100. The extending direction of the first electrode portions 121C is, for example, along the first direction D3 (e.g., the upper-to-lower direction in fig. 4A). As shown in fig. 4A, the plurality of first electrode portions 121C are arranged in a plurality of straight rows M, M +1, M +2, M +3 in parallel along the second direction D4. In the present embodiment, the first direction D3 is perpendicular to the second direction D4.
The second circuit pattern layer 160C includes a plurality of second electrode portions (e.g., second electrode portions 161C and 162C) disposed on the glass substrate 100. The second electrode portions 161C, 162C are arranged in a second direction D4 (e.g., left-to-right direction in fig. 4A) to form a row N. The rows N, N +1, N +2 of the plurality of second electrode portions may be arranged along the first direction D3.
The second circuit pattern layer 160C further includes a plurality of bridge portions 163C. The bridging portion 163C is disposed between two adjacent second electrode portions 161C and 162C to electrically connect the two adjacent second electrode portions 161C and 162C to each other. Since one first electrode portion 121C is provided between two adjacent second electrode portions 161C, 162C, the bridge portion 163C of the second circuit pattern layer 160C may straddle the first electrode portion 121C, so that the connection direction of the second electrode portions 161C, 162C may extend along the second direction D4.
Please refer to fig. 4A and fig. 4B simultaneously. Specifically, the first electrode portion 121C is coplanar with the second electrode portions 161C and 162C, and the first electrode portion 121C is provided in two adjacent second electrode portions 161C and 162C. Thus, the first patterned insulating layer 140C is disposed on a portion of the first electrode part 121C. For example, on the rows N, N +1, N +2, the first patterned insulating layer 140C overlaps portions of the first electrode portions 121C. The bridging portions 163C correspondingly overlap the first patterned insulating layer 140C to correspondingly span one electrode portion 121C. Thus, the bridging portion 163C can electrically connect two adjacent second electrode portions 161C and 162C, and can sequentially transmit signals to the plurality of second electrode portions on the rows N, N +1 and N + 2. Under the above arrangement, the first circuit pattern layer 120C and the second circuit pattern layer 160C can be staggered on the same height plane.
Referring to fig. 4A and 4C, the light emitting elements 200 may also be disposed on the first circuit pattern layer 120C and the second circuit pattern layer 160C in an array manner. The first contact 201 of the light emitting device 200 may be electrically connected to the first electrode portion 121C (the first circuit pattern layer 120C) through the first conductive structure 191. The second contact 202 may be electrically connected to the second electrode portion 162C (the second circuit pattern layer 160C) through the second conductive structure 192. In the present embodiment, the first circuit pattern layer 120C may have a first voltage greater than a second voltage of the second circuit pattern layer 160C. That is, the first conductive structure 191 is, for example, an anode (anode), and the second conductive structure 192 is, for example, a cathode (cathode), but the invention is not limited thereto. Thus, the first circuit pattern layer 120C and the second circuit pattern layer 160C can drive the plurality of light emitting elements 200 in an array manner, so that the light emitting device 10C can be applied to the field of backlight modules or display panels.
Under the above arrangement, the light emitting device 10C can be disposed with the first circuit pattern layer 120C and the second circuit pattern layer 160C on the same level, and the second electrode portions 161C and 162C of the second circuit pattern layer 160C can cross the first circuit pattern layer 120C through the bridge portion 163C. Thus, the light emitting device 10C can complete the circuit layout without additionally providing a circuit layer, thereby simplifying the manufacturing process and having the advantage of being thin. Further, the light emitting device 10C can also obtain the same effects as the above-described embodiment.
In summary, the light emitting device according to an embodiment of the invention has the glass substrate with high surface flatness, so that the first circuit pattern layer and the second circuit pattern layer with high fineness can be manufactured on the glass substrate by photolithography and etching processes. Under the above arrangement, the first patterned insulating layer and the second circuit pattern layer can achieve the high-precision requirement of fine line width, and further improve the density of the circuit layout, so that the light-emitting device can meet the requirement of high resolution or high brightness. In addition, the glass bottom of the light-emitting device can effectively and excellently dissipate heat energy generated by the light-emitting element during operation. Therefore, the efficiency of the light-emitting device can be further improved. In addition, the light emitting device can accommodate more and more complex wiring layouts per unit area. Therefore, the layout density of the circuit of the light-emitting device can be improved, and the light-emitting device has excellent quality with small volume and high resolution. In addition, the light-emitting device can complete circuit layout without additionally arranging a circuit layer, so that the manufacturing process can be simplified, and the light-emitting device has the advantage of thinning.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A light-emitting device, comprising:
a glass scale base having an upper surface;
the first circuit pattern layer is arranged on the upper surface of the glass scale bottom;
a first patterned insulating layer disposed on the upper surface and partially covering the first circuit pattern layer;
a second circuit pattern layer disposed on the upper surface, a portion of the second circuit pattern layer overlapping the first circuit pattern layer; and
a plurality of light emitting elements electrically connected to the first circuit pattern layer and the second circuit pattern layer respectively,
wherein a portion of the second circuit pattern layer overlapping the first circuit pattern layer sandwiches a portion of the first patterned insulating layer;
wherein the first circuit pattern layer has a first voltage, the second circuit pattern layer has a second voltage, and the first voltage is different from the second voltage.
2. The light-emitting device according to claim 1, wherein the first circuit pattern layer includes a first main body portion and a plurality of first electrode portions connected to the first main body portion, wherein the second circuit pattern layer includes a plurality of circuit lines, and wherein at least one of the plurality of circuit lines includes a second main body portion and a second electrode portion connected to the second main body portion.
3. The light-emitting device according to claim 2, wherein the first body portion and the second body portion partially overlap at different levels, and the first body portion extends along a first direction and the second body portion extends along a second direction, wherein the first direction is perpendicular to the second direction.
4. The light-emitting device according to claim 2, wherein the first patterned insulating layer includes a plurality of first openings, and wherein the plurality of first openings overlap and expose the plurality of first electrode portions, respectively.
5. The light-emitting device according to claim 4, wherein the second circuit pattern layer does not overlap the plurality of first openings.
6. The light-emitting device according to claim 4, further comprising a second patterned insulating layer disposed on the second circuit pattern layer, wherein the second patterned insulating layer comprises a plurality of second openings, and wherein one of the plurality of second openings overlaps and exposes the second electrode portion.
7. The light-emitting device according to claim 6, wherein the second patterned insulating layer further comprises a plurality of third openings, and the plurality of third openings correspondingly overlap the plurality of first openings.
8. The light-emitting device according to claim 1, wherein the first circuit pattern layer includes at least one first electrode portion, the second circuit pattern layer includes a plurality of second electrode portions and a plurality of bridge portions connecting the plurality of second electrode portions, wherein the at least one first electrode portion is coplanar with the plurality of second electrode portions, an extending direction of the at least one first electrode portion extends along a first direction, and a connecting direction of the plurality of second electrode portions extends along a second direction, wherein the first direction is perpendicular to the second direction.
9. The light-emitting device according to claim 8, wherein any one of the bridging portions electrically connects any two adjacent second electrode portions, and the bridging portions correspondingly overlap portions of the first patterned insulating layer so as to correspondingly span any one of the first electrode portions.
10. The light-emitting device according to claim 1, wherein the glass scale comprises one selected from the group of soda-lime-silicate glass scale, aluminosilicate glass scale, borosilicate glass scale, lead-silicate glass scale, and sapphire scale.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW109111454A TWI722857B (en) | 2020-04-06 | 2020-04-06 | Light-emitting device |
| TW109111454 | 2020-04-06 |
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| CN113497079A true CN113497079A (en) | 2021-10-12 |
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| CN202010411352.1A Pending CN113497079A (en) | 2020-04-06 | 2020-05-15 | Light emitting device |
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| TW (1) | TWI722857B (en) |
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| Publication number | Publication date |
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| TWI722857B (en) | 2021-03-21 |
| TW202139419A (en) | 2021-10-16 |
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