CN113488548A - Composite conductive film and heterojunction solar cell - Google Patents
Composite conductive film and heterojunction solar cell Download PDFInfo
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- CN113488548A CN113488548A CN202110754051.3A CN202110754051A CN113488548A CN 113488548 A CN113488548 A CN 113488548A CN 202110754051 A CN202110754051 A CN 202110754051A CN 113488548 A CN113488548 A CN 113488548A
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- 239000002131 composite material Substances 0.000 title claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 239000000203 mixture Substances 0.000 claims abstract description 22
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 21
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 21
- 238000007747 plating Methods 0.000 claims abstract description 21
- 239000011248 coating agent Substances 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims abstract description 18
- 150000004767 nitrides Chemical class 0.000 claims abstract description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 20
- 229910052796 boron Inorganic materials 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- 229910052779 Neodymium Inorganic materials 0.000 claims description 12
- 229910052797 bismuth Inorganic materials 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 12
- 229910052763 palladium Inorganic materials 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- 229910052725 zinc Inorganic materials 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 7
- 229910000838 Al alloy Inorganic materials 0.000 claims description 7
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 7
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 52
- 239000010408 film Substances 0.000 description 33
- 238000010586 diagram Methods 0.000 description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
The invention discloses a composite conductive film, which is of a laminated structure and sequentially comprises the following components: an anti-reflection layer, a mixture plating layer, and a transparent conductive layer; the mixture coating is a coating formed by mixing metal and metal oxide, or a coating formed by mixing metal and metal nitride, or a coating formed by mixing metal, metal oxide and metal nitride. The mixture plating layer can reduce the sheet resistance of the conductive film, and the invention also provides a heterojunction solar cell using the composite conductive film.
Description
Technical Field
The invention relates to the field of photovoltaics, in particular to a heterojunction solar cell and a composite conductive film thereof.
Background
The solar cell is an element which directly converts light energy into electric energy, and the range (0-4 eV) of a solar radiation spectrum is very wide, so that according to the principle of a photovoltaic effect, the single-junction solar cell made of a single semiconductor material can only convert a part of light energy in the solar radiation spectrum into electric energy, the effective utilization rate of the solar energy is low, and the output voltage is low. The heterojunction solar cell is the most promising solar cell due to its advantages of high conversion efficiency, high stability and double-sided power generation, but the solar conversion efficiency is still difficult to provide due to the resistance problem of the conductive film.
Disclosure of Invention
The invention provides a composite conductive film and a heterojunction solar cell using the same.
According to the composite conductive film provided by the invention, the composite conductive film is of a laminated structure and sequentially comprises the following components: an anti-reflection layer, a mixture plating layer, and a transparent conductive layer; the mixed coating is a coating formed by mixing metal and metal oxide, or a coating formed by mixing metal and metal nitride, or a coating formed by mixing metal, metal oxide and metal nitride.
Preferably, the at least one metal comprises Ag, Cu, Al, Mo, or an Ag alloy, Cu alloy, Al alloy, Mo alloy; the mass ratio of Ag in the Ag alloy is more than 50%, the mass ratio of Cu in the Cu alloy is more than 50%, the mass ratio of Al in the Al alloy is more than 80%, and the mass ratio of Mo in the Mo alloy is more than 80%; preferably, the other components In the Ag alloy are one or more of Zn, Cu, In, Pt, Pd, Au, Nb, Nd, B, Bi and Ni; the other components In the Cu alloy are one or more of Zn, Ag, In, Pt, Pd, Au, Nb, Nd, B, Bi and Ni; the other components In the Mo alloy are one or more of Zn, Cu, In, Pt, Pd, Au, Nb, Nd, B, Bi and Ni; the other components In the Al alloy layer are one or more of Zn, Cu, In, Pt, Pd, Au, Nb, Nd, B, Bi and Ni.
Preferably, the transparent conductive layer is a metal oxide, and the metal oxide is In2O3、SnO2One or more of ZnO, ITO, IZO, AZO, ITIO, ITIZO and FTO; wherein SnO in ITO2The doping weight percentage is 0-50%; 0-50% of ZnO doping weight percentage in IZO; al in AZO2O3The doping weight percentage is 0-50%; TiO in ITIO2The doping weight percentage is 0-10%; TiO in ITIZO2Doping weight percentage is 0-10%, ZnO doping weight percentage is 0-40%; the weight percentage of F doped in the FTO is 0-10%.
The heterojunction solar cell provided by the invention comprises an N-type wafer, wherein an i-type amorphous silicon oxide, an N-type amorphous silicon and the composite conductive film are sequentially arranged on a first surface of the N-type wafer, and an i-type amorphous silicon oxide, a p-type amorphous silicon and the composite conductive film are sequentially arranged on the other surface, opposite to the N-type wafer, of the N-type wafer.
Preferably, a conductive weather-resistant layer is further arranged between the transparent conductive layer and the mixture plating layer, and the weather-resistant layer is made of metal nitride, metal oxide, metal nitride and dopants thereof, or metal oxide and dopants thereof.
Preferably, at least one sacrificial layer is further arranged between the anti-reflection layer and the mixture coating layer, the sacrificial layer is metal, metal oxide or metal nitride, and the metal contained in the sacrificial layer is different from the main metal in the mixture coating layer.
The composite conductive film and the heterojunction solar cell provided by the invention can obviously improve the conversion efficiency of the heterojunction solar cell.
Drawings
FIG. 1 is a schematic view of a heterojunction solar cell of the present invention;
FIG. 2 is a schematic structural diagram of a composite conductive film according to the present invention;
FIG. 3 is a schematic structural diagram of a composite conductive film according to another embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a composite conductive film according to another embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a composite conductive film according to another embodiment of the present invention;
FIG. 6 is a schematic diagram of a heterojunction solar cell structure employing a composite conductive film.
Wherein:
100n type wafer
110i type amorphous silicon
120n type amorphous silicon
130p type amorphous silicon
140 composite conductive film
Schematic simplifications of 100' as 100, 110, 120, 130
141 anti-reflection layer
142 sacrificial layer
143 coating of the mixture
144 weatherable layer
145 transparent conductive layer
150 electrode wire
Detailed Description
The foregoing and other technical and scientific aspects, features and advantages of the present invention will be apparent from the following detailed description of a preferred embodiment, which is to be read in connection with the accompanying drawings. Directional terms as referred to in the following examples, for example: up, down, left, right, front or rear, etc., are simply directions with reference to the drawings. Accordingly, the directional terminology is used for purposes of illustration and is in no way limiting. The invention is described in further detail below with reference to the accompanying drawings:
fig. 1 is a schematic view of a heterojunction solar cell according to the present invention, and fig. 2 is a schematic view of a composite conductive film. As shown in fig. 1, the heterojunction solar cell includes an N-type wafer 100, wherein an i-type amorphous silicon oxide 110, an N-type amorphous silicon 120, a composite conductive film 140 and a silver gate line 150 are sequentially disposed on an upper surface of the N-type wafer 100, and an i-type amorphous silicon oxide 110, a p-type amorphous silicon 130, a composite conductive film 140 and a silver gate line 150 are sequentially disposed on a lower surface of the N-type wafer 100. As shown in fig. 2, in the present embodiment, the composite conductive film 140 includes an anti-reflection layer 141, a mixture plating layer 143, and a transparent conductive layer 145. The transparent conductive layer 145 is a metal oxide selected from In2O3、SnO2One or more of ZnO, ITO, IZO, AZO, ITIO, ITIZO and FTO, wherein SnO in ITO2The doping weight percentage is 0-50%; 0-50% of ZnO doping weight percentage in IZO; al in AZO2O3The doping weight percentage is 0-50%; TiO in ITIO2The doping weight percentage is 0-10%; TiO in ITIZO2Doping weight percentage is 0-10%, ZnO doping weight percentage is 0-40%; the weight percentage of F doped in the FTO is 0-10%. The inventor finds that the sheet resistance of the conductive layer can be further reduced by adding a plating layer with the thickness less than 10nm on the basis of the transparent conductive layer, namely the mixture plating layer 143, wherein the mixture plating layer 143 is a plating layer formed by mixing metal and metal oxide or metal and metal oxideA metal nitride mixed plating layer, or a metal mixed plating layer with a metal oxide and a metal nitride. When the coating is manufactured, a physical vapor deposition method is adopted, a small amount of oxygen and/or nitrogen is introduced into the reaction chamber, and the amount of the introduced gas is controlled, so that the metal sputtered from the metal target material is incompletely reacted, and the coating meeting the requirements can be formed. The target material can be selected from Ag, Cu, Al, Mo, Ag alloy, Cu alloy, Al alloy and Mo alloy, wherein In the Ag alloy, the mass ratio of Ag is more than 50%, and the balance is one or more of Zn, Cu, In, Pt, Pd, Au, Nb, Nd, B, Bi and Ni; in the Cu alloy, the mass ratio of Cu is more than 50%, and the balance is one or more of Zn, Ag, In, Pt, Pd, Au, Nb, Nd, B, Bi and Ni; in the Mo alloy layer, the mass ratio of Mo is more than 80%, and the balance is one or more of Zn, Cu, In, Pt, Pd, Au, Nb, Nd, B, Bi and Ni; in the Al alloy layer, the mass ratio of Al is more than 80%, and the balance is one or more of Zn, Cu, In, Pt, Pd, Au, Nb, Nd, B, Bi and Ni.
Fig. 3 is a schematic structural diagram of a composite conductive film 140 according to another embodiment of the present invention. Unlike the composite conductive film 140 in fig. 2, a weather-resistant layer 144 is further disposed between the hybrid plating layer 143 and the transparent conductive layer 145, the weather-resistant layer 144 has a thickness ranging from 2nm to 200nm, and is made of a metal nitride, a metal oxide, or an oxide/nitride of a metal dopant (doped with one or more materials such as Al, Ga, Zr, B, Y, Mo, and Sn), such as TiN, ZnO, TiO2, SnO2, and the like, and the dopant includes AZO, IZO, YZO, and the like. The weather-resistant layer 144 can prevent the corrosion of water vapor, oxygen and the like in the environment to the mixture plating layer 143, ensure the performance stability of the composite conductive film 140, and prolong the service life.
Fig. 4 is a schematic structural diagram of a composite conductive film 140 according to another embodiment of the present invention. Different from the composite conductive film 140 in fig. 2, a sacrificial layer 142 is further disposed between the anti-reflection layer 141 and the mixture plating layer 143, the thickness of the sacrificial layer is 0.5-10 nm, and the adopted materials are metals, metal nitrides, metal oxides, and the like, such as Ti, Ni, Cr, NiCr, TiN, ZnO, TiO2, SnO2, SiO2, Nb2O5, Ta2O5, Si3N4, and the like; the composite conductive film 140 is arranged adjacent to the amorphous silicon 120/130 or the amorphous silicon oxide 110, H in the amorphous silicon can corrode metal, and a sacrificial layer is arranged between the mixture plating layer 143 and the amorphous silicon layer, so that the metal in the mixture plating layer 143 can be protected, and the electrical performance of the composite conductive film 140 is guaranteed.
Fig. 5 is a schematic structural diagram of a composite conductive film 140 according to another embodiment of the present invention. Different from fig. 3, a sacrificial layer 142 is further disposed between the anti-reflection layer 141 and the mixture plating layer 143, and as mentioned above, the sacrificial layer 142 and/or the weather-resistant layer 144 are disposed to protect metal in the mixture plating layer from corrosion by oxygen, moisture in the environment, and H in amorphous silicon, so as to improve the performance of the composite conductive film 140 and increase the service life of the solar cell.
Fig. 6 is a schematic structural diagram of a solar cell according to another embodiment of the invention. The same reference numerals as those in fig. 5 denote the same structures shown in the drawings, and the description thereof is omitted. 100' is a simplified representation of the combination of elements 100, 110, 120, 130 of fig. 1. The structural relationship of the layers of the composite conductive film 140 when applied to a solar cell is shown.
According to the above embodiments, the inventors made the following examples and performed relevant tests on the implementation to obtain technical effects of different embodiments. As shown in table 1, each column gives the materials used and the film thicknesses of the respective stacks for the structure of the thin film stack in each example.
Table 1:
according to the above embodiments, the method is applied to a solar cell and compared with the performance of the solar cell with the existing common ITO conductive film. The parameters related to the ITO conductive film in the comparative example are shown in Table 2, and the performance comparison results are shown in Table 3.
Table 2: parameters of ITO conductive film in comparative example
TABLE 3
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the invention, which is defined by the appended claims and all simple equivalent changes and modifications within the scope of the invention. Moreover, it is not necessary for any embodiment or claim of the invention to address all of the objects, advantages, or features disclosed herein. In addition, the abstract and the title of the invention are provided for assisting the retrieval of patent documents and are not intended to limit the scope of the invention. Furthermore, the terms "first", "second", and the like in the description or the claims are used only for naming elements (elements) or distinguishing different embodiments or ranges, and are not used for limiting the upper limit or the lower limit on the number of elements.
Claims (10)
1. A composite conductive film is of a laminated structure and sequentially comprises: the transparent conductive coating comprises an anti-reflection layer, a mixture coating and a transparent conductive layer, and is characterized in that the mixture coating is a coating formed by mixing metal and metal oxide, or a coating formed by mixing metal and metal nitride, or a coating formed by mixing metal, metal oxide and metal nitride.
2. The composite conductive film according to claim 1, wherein the metal in the mixture plating layer is Ag, Cu, Al, Mo, Ag alloy, Cu alloy, Al alloy, Mo alloy.
3. The composite conductive film according to claim 2, wherein In the Ag alloy, the mass ratio of Ag is more than 50%, and the balance is one or more of Zn, Cu, In, Pt, Pd, Au, Nb, Nd, B, Bi and Ni; in the Cu alloy, the mass ratio of Cu is more than 50%, and the balance is one or more of Zn, Ag, In, Pt, Pd, Au, Nb, Nd, B, Bi and Ni; in the Mo alloy layer, the mass ratio of Mo is more than 80%, and the balance is one or more of Zn, Cu, In, Pt, Pd, Au, Nb, Nd, B, Bi and Ni; in the Al alloy layer, the mass ratio of Al is more than 80%, and the balance is one or more of Zn, Cu, In, Pt, Pd, Au, Nb, Nd, B, Bi and Ni.
4. The composite conductive film according to claim 1, wherein the transparent conductive layer is a metal oxide, and the metal oxide is In2O3、SnO2One or more of ZnO, ITO, IZO, AZO, ITIO, ITIZO and FTO.
5. The composite conductive film of claim 4 wherein the ITO comprises SnO2The doping weight percentage is 0-50%; 0-50% of ZnO doping weight percentage in IZO; al in AZO2O3The doping weight percentage is 0-50%; TiO in ITIO2The doping weight percentage is 0-10%; TiO in ITIZO2Doping weight percentage is 0-10%, ZnO doping weight percentage is 0-40%; the weight percentage of F doped in the FTO is 0-10%.
6. A heterojunction solar cell comprises an N-type wafer, wherein an i-type amorphous silicon oxide, an N-type amorphous silicon and a conducting layer are sequentially arranged on a first surface of the N-type wafer, and an i-type amorphous silicon oxide, a p-type amorphous silicon and a conducting layer are sequentially arranged on the other surface, opposite to the N-type wafer, of the N-type wafer, and the conducting layer is the composite conducting film according to any one of claims 1 to 5.
7. The heterojunction solar cell of claim 6, wherein an electrically conductive weatherable layer is further disposed between the transparent conductive layer and the mixture plating layer.
8. The heterojunction solar cell of claim 7, wherein the weatherable layer is a metal nitride, a metal oxide, a metal nitride and its dopants, or a metal oxide and its dopants.
9. The heterojunction solar cell of claim 6, wherein at least one sacrificial layer is further disposed between the antireflective layer and the mixture plating layer.
10. The heterojunction solar cell of claim 9, wherein said sacrificial layer is a metal, a metal oxide or a metal nitride, said sacrificial layer comprising a metal different from the primary metal in the hybrid coating.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110754051.3A CN113488548A (en) | 2021-07-04 | 2021-07-04 | Composite conductive film and heterojunction solar cell |
| EP21867893.6A EP4141966A4 (en) | 2021-10-30 | Solar cell | |
| PCT/CN2021/127785 WO2023279598A1 (en) | 2021-07-04 | 2021-10-30 | Solar cell |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110754051.3A CN113488548A (en) | 2021-07-04 | 2021-07-04 | Composite conductive film and heterojunction solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098835A (en) * | 2016-08-19 | 2016-11-09 | 山东新华联新能源科技有限公司 | Heterojunction solar battery and preparation method thereof |
| CN108010605A (en) * | 2017-11-21 | 2018-05-08 | 张家港康得新光电材料有限公司 | Nesa coating and its electronic device |
| CN111446024A (en) * | 2020-04-28 | 2020-07-24 | 北京载诚科技有限公司 | Transparent conductive film and touch screen |
| CN111446028A (en) * | 2020-04-28 | 2020-07-24 | 北京载诚科技有限公司 | Transparent conductive film and touch screen |
-
2021
- 2021-07-04 CN CN202110754051.3A patent/CN113488548A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098835A (en) * | 2016-08-19 | 2016-11-09 | 山东新华联新能源科技有限公司 | Heterojunction solar battery and preparation method thereof |
| CN108010605A (en) * | 2017-11-21 | 2018-05-08 | 张家港康得新光电材料有限公司 | Nesa coating and its electronic device |
| CN111446024A (en) * | 2020-04-28 | 2020-07-24 | 北京载诚科技有限公司 | Transparent conductive film and touch screen |
| CN111446028A (en) * | 2020-04-28 | 2020-07-24 | 北京载诚科技有限公司 | Transparent conductive film and touch screen |
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