CN113471391B - Quantum dot light-emitting effect transistor for coronavirus detection and preparation method thereof - Google Patents
Quantum dot light-emitting effect transistor for coronavirus detection and preparation method thereof Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/30—Organic light-emitting transistors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
- G01N2021/6432—Quenching
Abstract
The invention discloses a quantum dot light-emitting diode (LED) effect transistor for coronavirus detection and a preparation method thereof, which are based on a novel LED effect transistor device, integrate a biosensing process of probe identification, infrared luminescence detection, photogenerated carrier modulation and transportation and an LED light-emitting process of the quantum dot, and solve the problems of unbalanced electron and hole injection, exciton charge quenching, and limited external quantum efficiency and luminous energy efficiency in the traditional two-pole LED device. The invention converts the virus identification signal into an electric signal through infrared light, and then converts the modulated electric signal into a visible light signal to be identified. The high-sensitivity virus detection chip can timely discover viruses in early stage without waiting for the occurrence of the antibody to re-identify the viruses, shortens the virus discovery time, has the characteristics of simplicity, rapidness, convenience and the like, can observe results with naked eyes, is suitable for rapid field screening, can qualitatively analyze luminous signals with a fluorescence spectrometer, and is suitable for accurate treatment.
Description
Technical Field
The invention belongs to the technical field of quantum dot displays, and particularly relates to a device structure for a coronavirus detection quantum dot light-emitting effect transistor and a preparation method thereof.
Background
With the development of new coronavirus epidemic situation, large-scale screening is the largest requirement of detection kits at present. The precondition of early screening, early discovery and early isolation is to carry out comprehensive large-scale detection screening. Therefore, there is a need to explore and develop a novel detection method and device capable of rapidly screening viruses, realizing high-sensitivity, simple and rapid detection, improving the detection accuracy, continuously reducing the false negative rate, reducing the detection cost and shortening the time window for virus identification and judgment.
Along with the attention of researchers worldwide, related devices including quantum dot batteries, quantum dot light emitting diodes (QLEDs), quantum dot photoelectric detection and quantum dot marking are rapidly developed, and the quantum dot technology can meet the development trend and application prospect of the current nano-micro photoelectric devices. Quantum dot light emitting diodes (QLEDs) are a new type of display device that uses quantum dot materials as light emitting layers in organic or polymeric electroluminescent devices. Because the half-width of the emission spectrum of the quantum dot is narrow, and the spectrum range can be shifted along with the change of the size of the quantum dot, the QLED device has high luminous efficiency, and the luminous range can cover the whole visible spectrum range. Thus, in recent years, research on QLED devices has received a great deal of attention from research groups at home and abroad. The three-pole quantum dot light-emitting effect transistor (QLET) device can solve the key problems of unbalanced electron and hole injection, exciton charge quenching, limited external quantum efficiency and luminous energy efficiency and the like in the traditional QLED diode device, and compared with the QLED device, the QLET device has the advantages that: 1) The photoelectric system with the simpler driving circuit is beneficial to realizing the integration of the nanoscale light source and the switching device. 2) Under appropriate bias conditions, the spatial location of the light emitting region is away from the metal electrode, inhibiting exciton-metal quenching. 3) The accumulation of charge carriers and the high coincidence of the photon formed areas are avoided, the annihilation of severe exciton charges is eliminated, and the luminous energy efficiency and the working stability of the device are improved.
Disclosure of Invention
The invention aims to: aiming at the prior art, a transistor device for detecting the quantum dot light-emitting field effect by coronaviruses and a preparation method thereof are provided, and the problems of unbalanced electron and hole injection, exciton charge quenching, and limited external quantum efficiency and luminous energy efficiency in the traditional two-electrode light-emitting device are solved.
The technical scheme is as follows: a light-emitting effect transistor for coronavirus detection quantum dots comprises a transparent substrate, a transparent electrode, a hole injection layer, a hole transport layer, a quantum dot layer, an electron transport layer, a porous grid, an insulating layer, a quantum dot-metal nanoparticle composite layer, a semiconductor nano layer and a metal electrode which are sequentially arranged.
Further, the transparent substrate is made of glass, quartz or a transparent flexible substrate; the transparent electrode material is ITO, FTO or AZO.
Further, the semiconductor nano layer is formed by growing ZnO and TiO on single-layer nano zinc oxide or titanium oxide particles 2 The nano rod is formed, the length of the oxidation line or the oxidation rod is 50-10 mu m, and the diameter is 1-200nm.
Further, in the quantum dot-metal nanoparticle composite layer, quantum dots are made of quantum dot materials in an infrared region, and the wavelength range is 750-2000nm; the metal nano particles are made of Au, ag or Pt, and the particle diameter is 1-20nm; the metal nano particles are compounded with the quantum dots through bifunctional molecules.
Further, the material of the insulating layer is HfO 2 Or PMMA is prepared on the porous grid through electron beam evaporation, spin coating and sputtering, and the film thickness is 1-100nm.
Further, the porous grid adopts porous aluminum or porous ITO, the pore size is 1-100nm, the pore spacing is 1-100nm, and the thickness is 1-200nm.
Further, the difunctional molecules are thioglycollic acid, trinervical propionic acid, tetramercaptobutyric acid, pentamercaptovaleric acid, hexamercaptohexanoic acid, heptamercaptoheptanoic acid, octamercaptooctanoic acid, nonamercaptononanoic acid, decamercaptodecanoic acid, and 11-mercaptoundecanoic acid.
A preparation method for a coronavirus detection quantum dot light-emitting field effect transistor comprises the following steps:
step 1: preparing an ITO, FTO or AZO film by adopting an evaporation or sputtering method, forming a transparent electrode on a glass, quartz or flexible transparent substrate, and carrying out ozone treatment under an ultraviolet lamp;
step 2: the infiltration material was first heated to 60 degrees and then PEDOT was added: the PSS and graphene composite solution is spin-coated on a transparent substrate provided with a transparent electrode, wherein the spin-coating speed is 4000rpm, and the time is 20 seconds; drying for 20 minutes at 200 ℃ to obtain a hole injection layer with the film thickness of 40 nm;
step 3: coating a hole injection layer material doped with a polymer cross-linking agent on the hole transport layer, wherein the spin coating speed is 3000rpm, and the time is 30 seconds; then sintering for 10-30 minutes in a nitrogen environment at 100-200 ℃ to obtain a hole transport layer with the film thickness of 30-40 nm; wherein the polymer cross-linking agent is polyethylene glycol, polypropylene glycol, trimethylolpropane or trimethylolethane;
step 4: spin-coating a quantum dot solution with the concentration of 100mg/ml on the upper surface of the hole transport layer at the spin-coating speed of 500-2000rpm, and then drying at 145 ℃ for 30 minutes to obtain a quantum dot layer with the film thickness of 100-150 nm;
step 5: znO and TiO are mixed 2 Or ZnO, mgO particles are prepared into a solution of 20-50mg/mL, spin-coated on the surface of the quantum dot layer, the spin-coating speed is 2000-6000rpm, and then the solution is dried for 10-30 minutes at 100-200 ℃ to obtain an electron transport layer with the film thickness of 10 nm;
step 6: preparing porous aluminum or porous ITO on the electron transport layer by using an electron beam evaporation method or a magnetron sputtering method to obtain a porous grid with a film thickness of 1-200nm; wherein the pore size is 1-100nm, the pore spacing is 1-100nm, and the thickness is 1-200nm;
step 7: will HfO 2 Or PMMA is prepared on the porous grid electrode by an electron beam evaporation method or a spin coating method to obtain an insulating layer;
step 8: spin-coating nano zinc oxide or titanium oxide particles in 10-30mg/ml alcohol at a speed of 1000-4000rpm to obtain a seed crystal layer; then growing with growth liquid to obtain ZnO and TiO with length of 50-10 μm 2 The nano rod is used for obtaining the semiconductor nano layer;
step 9: in ZnO and TiO 2 Covering the nano rod with a quantum dot-metal nano particle solution and rotating for 15s at a rotating speed of 1000-4000 rpm; then, after adding a plurality of drops of quantum dot-metal nanoparticle solution, rotating for 15s again at the rotating speed of 1000-4000rpm, and repeating the operation for 3 times; spin coating, drying to form a film, and finally washing the film with methanol to obtain a cross-linked structure of the quantum dot-metal nano particle composite layer and the semiconductor nano layer;
step 10: and evaporating strip-shaped metal electrodes.
The beneficial effects are that: the invention adopts the QLET device, namely the modulation effect of the thin film transistor on the quantum dot light emitting device, accelerates the injection and transmission rate of holes by carrying out external electric field induction on the grid electrode, and simultaneously utilizes the grid voltage to control the light emitting intensity of the QLET device so as to achieve the signal which can be recognized by human eyes. For QLET devices with different biological identification signals, different signals carried by the biosensor can lead the devices to emit light with different intensities, and the association between the biological sensing signals and conversion luminescence signals on the QLET can be established through the record of a fluorescence spectrogram, so that the infection time is quantitatively analyzed. As shown in fig. 2, 1, when no infection exists, no virus or antibody exists in the object to be detected, the quantum dot-metal nano particle composite layer generates a photo-generated carrier under the excitation of infrared light, and based on the earlier research theory, due to the existence of the metal nano particles, the metal nano particles are quickly composited and annihilated, so that no light signal is generated after QLET; 2. when no antibody protein is generated within three days of infection, the quantum dot-metal nanoparticle composite layer only binds antigen, a small amount of quantum dots are released, a low light signal is generated after QLET, and a low brightness range is determined through experiments; 3. after three days, antibody protein is generated, the quantum dot-metal nanoparticle composite layer is combined with antigen and antibody to release a large number of quantum dots, after QLET, medium and high light signals are generated, the medium and high brightness ranges are determined through experiments, and the brightness value rises along with the increase of the number of infection days. An association mechanism between the two is established.
Drawings
FIG. 1 is a schematic diagram of a structure of a transistor for coronavirus detection quantum dot light-emitting field effect according to the present invention;
FIG. 2 is a diagram of a coronavirus detection quantum dot light-emitting effect transistor according to the present invention when not in operation and when in operation;
fig. 3 is a schematic diagram of a porous gate structure.
Detailed Description
The invention is further explained below with reference to the drawings.
As shown in fig. 1, the transistor for coronavirus detection quantum dot light-emitting effect comprises a transparent substrate 1, a transparent electrode 2, a hole injection layer 3, a hole transport layer 4, a quantum dot layer 5, an electron transport layer 6, a porous grid 7, an insulating layer 8, a quantum dot-metal nanoparticle composite layer 9, a semiconductor nano layer 10 and a metal electrode 11 which are sequentially arranged.
Wherein, the transparent substrate 1 adopts glass, quartz or transparent flexible substrate, and the transparent substrate is ITO coated polyethylene terephthalate film (ITO-PET) flexible substrate or. The transparent electrode 2 is made of ITO (indium tin oxide In) 2 O 3 ：Sn)、FTO(SnO 2 F) or AZO (ZnO: al). The inorganic materials of the hole injection layer 3 are: moO (MoO) x 、WO x As the organic material, poly (3, 4-ethylenedioxythiophene) -polystyrene sulfonate PEDOT: PSS, etc., may be used. The hole transport layer 4 has a thickness of 30-40nm, and can be prepared from organic Polyvinylcarbazole (PVK) and TFB poly [ (9, 9-di-N-octylfluorenyl-2, 7-diyl) -alt- (4, 4' - (N- (4-N-butyl) phenyl) -diphenylamine)]Etc. The semiconductor nano layer 10 is formed by growing ZnO and TiO on single-layer nano zinc oxide or titanium oxide particles 2 The nano rod is formed, the length of the oxidation line or the oxidation rod is 50-10 mu m, and the diameter is 1-200nm. The quantum dot layer 5 has a thickness of 30nm, and can adopt a core-shell structure, wherein the core is one or more of cadmium sulfide, cadmium selenide, lead sulfide and lead selenide, and the shell is one of zinc sulfide and zinc selenide. The electron transport layer 6 has a thickness of 50-60nm, and ZnO and TiO can be used 2 ZnO, mgO, etc. As shown in FIG. 3, the porous grid 7 is made of porous aluminum or porous ITO, the pore size is 1-100nm, the pore spacing is 1-100nm, and the thickness is 1-200nm. The material of the insulating layer 8 is HfO 2 Or PMMA, which is prepared on the porous grid electrode 7 by electron beam evaporation, spin coating and sputtering, and the film thickness is 1-100nm. In the quantum dot-metal nanoparticle composite layer 9, quantum dots are made of quantum dot materials in an infrared region, such as PbS and PbSe, and the wavelength range is 750-2000nm; the metal nano particles are made of Au, ag or Pt, and the particle diameter is 1-20nm. The metal nano-particles are compounded with quantum dots through bifunctional molecules, wherein the bifunctional molecules are thioglycollic acid, trinervical propionic acid, tetramercaptobutyric acid, pentamercaptovaleric acid, hexamercaptohexanoic acid, heptamercaptoheptanoic acid, octamercaptooctanoic acid, nonamercaptononanoic acid, decamercaptodecanoic acid and 11-mercaptoundecanoic acid. The metal electrode 11 is gold, silver, platinum or aluminum.
A preparation method for a coronavirus detection quantum dot light-emitting field effect transistor comprises the following steps:
step 1: preparing an ITO, FTO or AZO film by adopting an evaporation or sputtering method, forming a transparent electrode on a glass, quartz or flexible transparent substrate, and carrying out ozone treatment under an ultraviolet lamp to enhance the surface polarity; wherein, the electrode adopts metal target materials such as gold, silver, platinum and aluminum, and the metal target materials are evaporated on the substrate.
Step 2: the infiltration material was first heated to 60 degrees and then PEDOT was added: the PSS and graphene composite solution is spin-coated on a transparent substrate provided with a transparent electrode, wherein the spin-coating speed is 4000rpm, and the time is 20 seconds; and then dried at 200 ℃ for 20 minutes to obtain a hole injection layer with a film thickness of 40 nm.
Step 3: coating a hole injection layer material doped with a polymer cross-linking agent on the hole transport layer, wherein the spin coating speed is 3000rpm, and the time is 30 seconds; then sintering for 10-30 minutes in a nitrogen environment at 100-200 ℃ to obtain a hole transport layer with the film thickness of 30-40 nm; wherein the polymer cross-linking agent is polyethylene glycol, polypropylene glycol, trimethylol propane or trimethylol ethane.
Step 4: and (3) spin-coating the quantum dot solution with the concentration of 100mg/ml on the upper surface of the hole transport layer at the spin-coating speed of 500-2000rpm, and then drying at 145 ℃ for 30 minutes to obtain the quantum dot layer with the film thickness of 100-150 nm.
Step 5: znO and TiO are mixed 2 Or ZnO, mgO particles are prepared into a solution of 20-50mg/mL, spin-coated on the surface of the quantum dot layer, the spin-coating speed is 2000-6000rpm, and then the electron transport layer with the film thickness of 10nm is obtained by drying for 10-30 minutes at 100-200 ℃.
Step 6: preparing porous aluminum or porous ITO on the electron transport layer by using an electron beam evaporation method or a magnetron sputtering method to obtain a porous grid with a film thickness of 1-200nm; wherein the pore size is 1-100nm, the pore spacing is 1-100nm, and the thickness is 1-200nm.
Step 7: will HfO 2 Or PMMA is prepared on the porous grid electrode by an electron beam evaporation method or a spin coating method to obtain the insulating layer.
Step 8: spin-coating nano zinc oxide or titanium oxide particles in 10-30mg/ml alcohol at a speed of 1000-4000rpm to obtain a seed crystal layer; thenGrowing with growth liquid to obtain ZnO and TiO with length of 50-10 μm 2 The nano rod is used for obtaining the semiconductor nano layer.
Step 9: in ZnO and TiO 2 Covering the nano rod with a quantum dot-metal nano particle solution and rotating for 15s at a rotating speed of 1000-4000 rpm; then, after adding a plurality of drops of quantum dot-metal nanoparticle solution, rotating for 15s again at the rotating speed of 1000-4000rpm, and repeating the operation for 3 times; then spin coating, drying and film forming are carried out, znO and TiO are carried out 2 And (3) the nanorods are covered highly, and finally, the film is washed by methanol to obtain the cross-linked structure of the quantum dot-metal nanoparticle composite layer and the semiconductor nano layer.
Step 10: evaporating metal strip electrode on the electrode, wherein the effective area of each device is 3mm 2 。
The invention is used for a coronavirus detection quantum dot light-emitting effect transistor, generates a photogenerated carrier after infrared light excites quantum dots, and then controls the transmission and aggregation of electrons by a grid electrode to enter a quantum dot light-emitting diode device (QLED) to realize an integral tripolar phototransistor device. With this structure, the current in the QLED can be modulated by the incident light and the gate voltage. The light responsive portion comprises a solution prepared infrared quantum dot light responsive material sandwiched between a semiconductor nanolayer and an insulating layer. When the quantum dot light source works, after being absorbed by the quantum dot, the infrared photons generate photocarriers through the semiconductor nano layer to generate a field intensity region, electrons injected onto the porous grid enter the QLED structure through modulation, and the injected electrons and holes are combined in the QLED to emit light through the porous grid. The highly integrated photoelectric device integrates an infrared light-emitting detector and an organic light-emitting diode, and can realize an optical modulation type transistor device with high external quantum efficiency and high detection rate.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (6)
1. The quantum dot light-emitting effect transistor for coronavirus detection is characterized by comprising a transparent substrate (1), a transparent electrode (2), a hole injection layer (3), a hole transport layer (4), a quantum dot layer (5), an electron transport layer (6), a porous grid (7), an insulating layer (8), a quantum dot-metal nano particle composite layer (9), a semiconductor nano layer (10) and a metal electrode (11) which are sequentially arranged; in the quantum dot-metal nanoparticle composite layer (9), quantum dots are made of quantum dot materials in an infrared region, and the wavelength range is 750-2000nm; the metal nano particles are made of Au, ag or Pt, and the particle diameter is 1-20nm; the metal nano particles are compounded with the quantum dots through bifunctional molecules; the difunctional molecules are thioglycollic acid, three-necked propionic acid, tetramercapto butyric acid, pentamercapto valeric acid, hexamercapto caproic acid, heptamercapto heptanoic acid, octamercapto caprylic acid, nonamercapto pelargonic acid, decamercapto capric acid and 11-mercapto undecanoic acid.
2. The quantum dot light-emitting effect transistor for coronavirus detection according to claim 1, characterized in that the transparent substrate (1) is a glass, quartz or transparent flexible substrate; the transparent electrode (2) is made of ITO, FTO or AZO.
3. The transistor according to claim 1, wherein the semiconductor nano-layer (10) is a semiconductor nano-layer formed by growing ZnO, tiO on single-layer nano-zinc oxide or titanium oxide particles 2 The nano rod is formed by oxidizing wires or rods with the length of 50-10 mu m and the diameter of 1-200nm.
4. The quantum dot light-emitting effect transistor for coronavirus detection according to claim 1, characterized in that the material of the insulating layer (8) is HfO 2 Or PMMA, is prepared on the porous grid electrode (7) by electron beam evaporation, spin coating and sputtering, and the film thickness is 1-100nm.
5. The transistor according to claim 1, wherein the porous grid (7) is made of porous aluminum or porous ITO, the pore size is 1-100nm, the pore spacing is 1-100nm, and the thickness is 1-200nm.
6. The preparation method of the quantum dot light-emitting field effect transistor for coronavirus detection is characterized by comprising the following steps of:
step 1: preparing an ITO, FTO or AZO film by adopting an evaporation or sputtering method, forming a transparent electrode on a glass, quartz or flexible transparent substrate, and carrying out ozone treatment under an ultraviolet lamp;
step 2: the infiltration material was first heated to 60 degrees and then PEDOT was added: the PSS and graphene composite solution is spin-coated on a transparent substrate provided with a transparent electrode, wherein the spin-coating speed is 4000rpm, and the time is 20 seconds; drying for 20 minutes at 200 ℃ to obtain a hole injection layer with the film thickness of 40 nm;
step 3: coating a hole injection layer material doped with a polymer cross-linking agent on the hole transport layer, wherein the spin coating speed is 3000rpm, and the time is 30 seconds; then sintering for 10-30 minutes in a nitrogen environment at a sintering temperature of 100-200 ℃ to obtain a hole transport layer with a film thickness of 30-40 nm; wherein the polymer cross-linking agent is polyethylene glycol, polypropylene glycol, trimethylolpropane or trimethylolethane;
step 4: spin-coating the quantum dot solution with the concentration of 100mg/ml on the upper surface of the hole transport layer at the spin-coating speed of 500-2000rpm, and then drying at 145 ℃ for 30 minutes to obtain a quantum dot layer with the film thickness of 100-150 nm;
step 5: znO and TiO are mixed 2 Or ZnO, mgO particles are prepared into a solution of 20-50mg/mL, spin-coated on the surface of the quantum dot layer, the spin-coating speed is 2000-6000rpm, and then the solution is dried for 10-30 minutes at 100-200 ℃ to obtain an electron transport layer with the film thickness of 10 nm;
step 6: preparing porous aluminum or porous ITO on the electron transport layer by using an electron beam evaporation method or a magnetron sputtering method to obtain a porous grid with a film thickness of 1-200nm; wherein, the hole size is 1-100nm, the hole spacing is 1-100nm, and the thickness is 1-200nm;
step 7: will HfO 2 Or PMMA is prepared on the porous grid electrode by an electron beam evaporation method or a spin coating method to obtain an insulating layer;
step 8: spin-coating nano zinc oxide or titanium oxide particles in 10-30mg/ml alcohol at a speed of 1000-4000rpm to obtain a seed crystal layer; then growing with growth liquid to obtain ZnO and TiO with length of 50-10 μm 2 The nano rod is used for obtaining the semiconductor nano layer;
step 9: in ZnO and TiO 2 Covering the nanorods with a quantum dot-metal nanoparticle solution and rotating at a rotating speed of 1000-4000rpm for 15s; then, after adding a plurality of drops of quantum dot-metal nanoparticle solution, rotating 15s again at a rotating speed of 1000-4000rpm, and repeating the operation for 3 times; spin coating, drying to form a film, and finally washing the film with methanol to obtain a cross-linked structure of the quantum dot-metal nano particle composite layer and the semiconductor nano layer;
step 10: and evaporating strip-shaped metal electrodes.
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| KR20100128623A (en) * | 2009-05-28 | 2010-12-08 | 한국화학연구원 | Near infrared photo-detector |
| CN108831905A (en) * | 2018-05-28 | 2018-11-16 | 东南大学 | A kind of infrared acquisition based on semiconductor-quantum-point-visible light shows integrated system, preparation method and imaging method |
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