CN108831905A - A kind of infrared acquisition based on semiconductor-quantum-point-visible light shows integrated system, preparation method and imaging method - Google Patents
A kind of infrared acquisition based on semiconductor-quantum-point-visible light shows integrated system, preparation method and imaging method Download PDFInfo
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- CN108831905A CN108831905A CN201810521330.3A CN201810521330A CN108831905A CN 108831905 A CN108831905 A CN 108831905A CN 201810521330 A CN201810521330 A CN 201810521330A CN 108831905 A CN108831905 A CN 108831905A
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Abstract
The invention discloses a kind of, and the infrared acquisition based on semiconductor-quantum-point-visible light shows integrated system, preparation method and imaging method, the system includes successively from the bottom up transparent substrate, transparent electrode, hole transmission layer, quantum dot light emitting layer, electron transfer layer, grid electrode, insulating medium layer, p-type doped layer, quantum dot infrared electro conversion layer, n-type doping layer and rear passive electrode, further includes infrared acquisition structure power supply and visible light light emitting structure power supply；Transparent electrode is connected with the anode of visible light light emitting structure power supply；Grid electrode is connected with the cathode of visible light light emitting structure power supply and infrared acquisition structure power supply；Passive electrode is connected with the anode of infrared acquisition structure power supply afterwards.The present invention integrates detecting structure and display structure, realizes probe unit to the direct-coupling of display pixel, incident infrared image is converted directly into visible images；Pixellated electrodes are not needed when preparation, greatly simplifie preparation process, reduce preparation cost.
Description
Technical field
The present invention relates to a kind of infrared image detection and the method and system structure that visible images show is formed, especially
It is related to a kind of infrared acquisition based on semiconductor-quantum-point-visible light and shows integrated system, preparation method and imaging method.
Background technique
Infrared acquisition and be imaged on the fields such as security monitoring, medical diagnosis, national security and goal direct have it is important
Using.Because the wavelength of infrared photon has exceeded human eye sensitizing range, human eye cannot observe directly infrared image.
In infrared acquisition and imaging process, need to convert the infrared photon signal received using detector or sensor array
For electric signal, and pass through the transmitting and information processing of signal, then the electric signal is converted into visible images by display.
The infrared detector of commercialization at present is mostly with II-VI group or Group III-V compound semiconductor crystal, such as
HgCdTe and InGaAs etc. will detect target surface by flip chip bonding etc. and connect CMOS reading circuit as photoelectric conversion active material.
These sensitive detection parts are required by crystalline material epitaxial growth and some other high temperature preparation process.And photoelectric display device
Basic material and device preparation then differ widely with detector.To represent the organic light emitting display of flat panel display developing direction
For device, luminescent material is that small molecule luminous organic material or high molecular polymer luminescent material, device are mainly prepared
Technique is cryogenic vacuum plated film or room temperature inkjet printing etc..Due to the basis of existing light-detecting device and photoelectric display device
Functional material, basic device structure and preparation process are incompatible, so can not be by photoelectric detector and photoelectric display device
It integrates on the same substrate.
Summary of the invention
Goal of the invention：For in the prior art functional material, device architecture and preparation process it is incompatible due to, lead
The problem for causing that infrared detector and visible light display can not be integrated, the present invention proposes incident short-wave infrared image is direct
The method for being converted to visible images, and the infrared acquisition based on semiconductor-quantum-point-visible light show integrated system and system
Preparation Method.
Technical solution：The present invention provides a kind of, and infrared acquisition-visible light based on semiconductor-quantum-point shows integrated system
System, the system successively include transparent substrate, transparent electrode, hole transmission layer, quantum dot light emitting layer, electron-transport from the bottom up
Layer, grid electrode, insulating medium layer, p-type doped layer, quantum dot infrared electro conversion layer, n-type doping layer and rear passive electrode,
It further include infrared acquisition structure power supply and visible light light emitting structure power supply；
The transparent electrode is connected with the anode of visible light light emitting structure power supply；
The cathode of the cathode and infrared acquisition structure power supply of the grid electrode and visible light light emitting structure power supply is connected
It connects；
Passive electrode is connected with the anode of infrared acquisition structure power supply after described.
Preferably, the transparent substrate is glass substrate or flexible plastic substrates.
Preferably, the transparent electrode is transparent tin indium oxide (ITO) electrode or fluorine-doped tin oxide (FTO) electrode.
Preferably, the quantum dot light emitting layer is CdSe quantum dot, MAPbIxBr3-xOrgano-mineral complexing perovskite quantum
Point or CsPbIxBr3-xInorganic perovskite quantum dot.
Preferably, the grid electrode is made of Al metal material, or is made of grapheme two-dimension material, the grid electrode
Equipped with several electrode fenestras, the signal electric field that infrared detection members are formed adjusts quantum dot light emitting performance by electrode fenestra
Control.
Preferably, the insulating medium layer thickness is less than 100nm.
Preferably, the p-type doped layer is poly (Nvinylcarbazole) PVK, NN'-bis (4-
Butylphenyl) poly-TPD or Spiro-OMeTAD layers of-benzi of-N, N'-bis (phenyl).
It prepares above-mentioned infrared acquisition-visible light based on semiconductor-quantum-point the present invention also provides a kind of and shows integrated system
The method of system prepares transparent electrode using the method for sputtering on the transparent substrate first, further spin coating system on the transparent electrodes
Standby hole transmission layer, further spin coating prepares quantum dot light emitting layer on the hole transport layer, further on quantum dot light emitting layer
Spin coating prepares electron transfer layer, further prepares grid electrode or spin coating on the electron transport layer by the method that exposure mask is deposited
Graphene film forms grid electrode, and PMMA organic insulating medium layer or use are further prepared on grid electrode by spin-coating method
Sputtering method prepares inorganic insulation dielectric layer, further prepares p-type doped layer on insulating medium layer by spin-coating method, further leads to
It crosses spin-coating method and prepares quantum dot infrared electro conversion layer in p-type doped layer, further by spin-coating method in quantum dot infrared light
N-type doping layer is prepared on electric conversion layer, passive electrode after further preparing in n-type doping layer by the method being evaporated in vacuo.
The present invention also provides a kind of, and the infrared acquisition based on semiconductor-quantum-point-visible light shows the imaging of integrated system
Method, this method show integrated system using the above-mentioned infrared acquisition based on semiconductor-quantum-point-visible light, work as short-wave infrared
When photon is incident on quantum dot infrared electro conversion layer, light induced electron/hole pair is generated, it is inclined in infrared acquisition structure reversal of power
Under the electric field action of pressure, light induced electron drifts about upwards, is received by infrared acquisition structure power supply；Photohole drifts about downwards, by
To the barrier of insulating medium layer, photohole generates charge accumulated in insulating medium layer upper end, which passes through charge sense
Induction electronics should be generated in insulating medium layer lower end, induction electronics penetrates the electrode fenestra of grid electrode to quantum dot light emitting layer
Electric field generates regulation；Under the effect of visible light light emitting structure power supply, induction electronics drifts about from the top down, and hole then passes through transparent electrode
It drifts about from bottom to top；Electrons and holes are compound in quantum dot light emitting layer, generate VISIBLE LIGHT EMISSION.
Preferably, grid electrode, transparent electrode and rear passive electrode are respectively the source of vertical-channel thin-film transistor structure
Pole, drain and gate modulate the charge accumulated of vertical-channel thin film transistor (TFT) by the incident intensity of infrared photon, realize and visit
The amplification of signal is surveyed, and then regulates and controls the current between the source and the drain, to change visible light display brightness.
Beneficial effect：Compared with prior art, the present invention has the following advantages and beneficial effect：
1, infrared acquisition-visible light proposed by the present invention based on semiconductor-quantum-point shows the exhausted big of integrated system structure
Partial circuit is all in Embedded, so peripheral drive circuit is greatly simplified.Meanwhile based on CdS quantum dots
(vertical-channel is thin for probe unit (i.e. infrared detection members), display unit (i.e. visible light display portion) and thin film transistor (TFT)
Film transistor) it can be prepared in the flexible substrates such as plastics by sol-gel method and the method for film vapor deposition, it realizes big
Detection/array of display of area is integrated, mitigates the weight and thickness of system.
2, infrared acquisition-visible light proposed by the present invention based on semiconductor-quantum-point shows that integrated system structure can be real
The Embedded of existing probe unit and display unit, can form probe unit-display unit one-to-one correspondence, avoid separation
Formula photodetection-display system detectable signal needs parallel detecting-series read-out-serial transmission-parallel signal conversion-display to drive
Dynamic complex process has accumulation of more effective times for light detecting signal, to greatly improve light detection sensitivity.
3, wearable device objective requirement electronic system is integrated in the flexible substrates such as plastics.It is proposed by the present invention to be based on half
Infrared acquisition-visible light of conductor quantum dot shows integrated system structure with colloidal semiconductor quantum dot for detection and display material
Material, using room temperature prepare thin film transistor (TFT) as basic circuit unit, avoid high temperature preparation process, be adapted to plastics or
Polymer flexibility substrate is to the technical requirements of preparation temperature, to push the development of wearable equipment.
Detailed description of the invention
Fig. 1 is that infrared acquisition-visible light of the invention based on semiconductor-quantum-point shows integrated system structure sectional view；
Fig. 2 is the top cross-sectional view of Fig. 1；
Fig. 3 is photo-generate electron-hole pairs separation and the charge accumulated of infrared detection members；
Fig. 4 is that visible light display portion electrons and holes are compound, to generate optical photon transmitting.
Specific embodiment
The present invention will be further explained with reference to the accompanying drawing.
As shown in Figure 1, a kind of infrared acquisition based on semiconductor-quantum-point of the invention-visible light shows integrated system,
It from the bottom up successively include transparent substrate 1, transparent electrode 2, hole transmission layer 3, quantum dot light emitting layer 4, electron transfer layer 5, net
Lattice electrode 6, insulating medium layer 7, p-type doped layer 8, quantum dot infrared electro conversion layer 9, n-type doping layer 10 and rear passive electrode
11, it further include infrared acquisition structure power supply 12 and visible light light emitting structure power supply 13；Wherein, transparent electrode 2 and visible light shine
The anode of structure power supply 13 is connected；The cathode and infrared acquisition structure of grid electrode 6 and visible light light emitting structure power supply 13
The cathode of power supply 12 is connected；Passive electrode 11 is connected with the anode of infrared acquisition structure power supply 12 afterwards.
Transparent electrode 2 had both needed very high light transmittance, it is also desirable to have higher conductivity, so its thickness is usually to count
Ten to hundreds of nanometers.Hole transmission layer, quantum dot light emitting layer, electron transfer layer, grid electrode, p-type doped layer, quantum dot are infrared
Photoelectric conversion layer, n-type doping layer and rear passive electrode thickness are usually tens nanometer.Passive electrode can be by Al metal material afterwards
Material is constituted.Transparent electrode and rear passive electrode are prepared by sputtering method.The major function of insulating medium layer 7 is in rear passive electrode
Electric charge induction electric field is generated between 11 and grid electrode 6, therefore insulating medium layer 7 must have very high resistivity and very little
Leakage current.7 thickness of insulating medium layer needs very thin simultaneously, to improve field effect capacitor value.The thickness of usual insulating medium layer 7 is small
In 100 nanometers.
The integrated system can be divided into infrared acquisition and visible light shows two parts, and wherein infrared detection members include net
Lattice electrode 6, insulating medium layer 7, p-type doped layer 8, quantum dot infrared electro conversion layer 9, n-type doping layer 10, rear passive electrode 11
With infrared acquisition structure power supply 12.Infrared detection members major function is that incident infrared photon is converted to probe current letter
Number, and (i.e. the electric field of the hole of insulating medium layer upper end accumulation and lower end induction electronically formed produces using probe current signal
Raw electric current) regulation visible light luminous intensity.Visible light display portion includes transparent substrate 1, transparent electrode 2, hole transmission layer
3, quantum dot light emitting layer 4, electron transfer layer 5, grid electrode 6, insulating medium layer 7 and visible light light emitting structure power supply 13.It can be seen that
The function of light display portion is will be compound in quantum dot light emitting layer from 13 injected electrons of visible light light emitting structure power supply and hole,
To generate optical photon transmitting.
Since the luminous flux of infrared photon is much smaller than light photon flux required for showing, cannot simply by
Infrared detection members are connected in series to visible light display portion, and directly drive quantum dot light emitting with probe current and show.The present invention mentions
Infrared acquisition and visible light display are cascaded using vertical-channel thin-film transistor structure out, wherein grid electrode 6 is as vertical
The source electrode of channel thin-film transistor, drain electrode of the transparent electrode 2 as vertical-channel thin film transistor (TFT), rear passive electrode 11 is as vertical
The grid of straight channel thin-film transistor；By field effect caused by 7 both ends electric charge induction of insulating medium layer by infrared photon
Regulate and control the current between the source and the drain after generated detectable signal amplification, to change visible light display brightness.Fig. 2 is figure
1 top cross-sectional view.
Transparent substrate uses glass substrate or flexible plastic substrates with the high grade of transparency etc..Transparent electrode can be
Bright tin indium oxide (ITO) electrode or fluorine-doped tin oxide (FTO) electrode etc..Grid electrode can be constituted for Al metal material,
Or it is made of grapheme two-dimension material；P-type doped layer is poly (Nvinylcarbazole) PVK, N, N'-bis (4-
Butylphenyl) poly-TPD or Spiro-OMeTAD layers of-benzi of-N, N'-bis (phenyl).Quantum dot infrared electro turns
Layer is made of PbS quantum or Ge quantum dot, these quantum dots have relatively narrow band gap, can be with after absorbing short-wave infrared photon
Expeditiously generate electron hole pair.N-type doping layer is made of C60, PCBM, ZnO or TiO2 material.Hole transmission layer, quantum
Point luminescent layer, electron transfer layer, p-type doped layer, quantum dot infrared electro conversion layer and n-type doping layer can pass through spin coating, spray
The room temperatures technology preparation such as ink printing and transfer.Grid electrode can sputter the metal electrodes such as Al by mask plate, can also pass through
The method of spin coating graphene film obtains the graphene layer with certain Density Distribution.Insulating medium layer can be sunk by the method sputtered
Product SiO2、SiNxEqual inorganic insulating materials can also deposit PMMA organic insulator with the methods of spin coating.
Infrared acquisition proposed by the present invention based on semiconductor-quantum-point-visible light shows the physics mistake of integrated system work
Cheng Wei：As shown in figure 3, when infrared photon is incident on quantum dot infrared electro conversion layer 9, due to quantum dot infrared electro conversion layer
Photoelectric effect generate photo-generate electron-hole pairs, photo-generate electron-hole pairs infrared acquisition structure power supply 12 be formed by bias make
Under, passive electrode 11 drifts about light induced electron backward, and photohole drifts about to grid electrode 6.In Fig. 1 structure, functional layer 10
For n-type doping layer, functional layer 8 is p-type doped layer, they and quantum dot infrared electro conversion layer 9 constitute p-i-n structure, anti-
Set the dark current that detecting structure (infrared detection members) are effectively reduced under bias.Functional layer 7 is very thin insulating medium layer, it can
To stop photohole to the transmission of grid electrode 6, positive charge accumulation is formed in the upper surface of insulating medium layer 7, while exhausted
The lower surface of edge dielectric layer 7 induces negatively charged layers.Grid electrode 6 has certain cell size, and insulating medium layer 7 induces negative
Charge can influence the electric field between grid electrode 6 and transparent electrode 2 by the fenestra of grid electrode 6.As shown in figure 4, can
Under the action of light-exposed light emitting structure power supply 13, electronics is injected from grid electrode 6, and hole is injected from transparent electrode 2, to form source
Leakage current, source-drain current is by the sensitive modulation of negative electrical charge induced on insulating medium layer 7.It is injected respectively from source electrode and drain electrode
Electrons and holes are compound on quantum dot light emitting layer 4, launch optical photon.In visible light display portion, functional layer 3 and function
Layer 5 is respectively hole transmission layer and electron transfer layer, and major function is the band structure of regulation visible light display portion, so that
Electrons and holes can high efficiency be compound in quantum dot light emitting layer 4, generates VISIBLE LIGHT EMISSION.
A kind of infrared acquisition based on semiconductor-quantum-point-visible light shows the imaging method of integrated system, and this method is adopted
Integrated system is shown with the above-mentioned infrared acquisition based on semiconductor-quantum-point-visible light, when the short-wave infrared photon amount of being incident on
When son point infrared electro conversion layer, light induced electron/hole pair is generated, is made in the electric field of 12 reverse biased of infrared acquisition structure power supply
Under, light induced electron drifts about upwards, is received by infrared acquisition structure power supply；Photohole drifts about downwards, by dielectric
The barrier of layer 7, photohole generate charge accumulated in insulating medium layer upper end, which is situated between by electric charge induction in insulation
Matter layer lower end generates induction electronics, and induction electronics generates the electric field of quantum dot light emitting layer 4 through the electrode fenestra of grid electrode 6
Regulation；Under visible light light emitting structure power supply 13 acts on, induction electronics drifts about from the top down, and hole then passes through transparent electrode 2 under
Drift upwards；Electrons and holes are compound in quantum dot light emitting layer 4, generate VISIBLE LIGHT EMISSION.
Wherein, grid electrode, transparent electrode and rear passive electrode be respectively vertical-channel thin-film transistor structure source electrode,
Drain and gate modulates the charge accumulated of vertical-channel thin film transistor (TFT) by the incident intensity of infrared photon, realizes detection
The amplification of signal, and then regulate and control the current between the source and the drain, to change visible light display brightness.
Infrared acquisition proposed by the present invention based on semiconductor-quantum-point-visible light shows that integrated system can be using under
It is prepared from upper method.Specially：ITO FTO transparent electrode 2 is prepared using the method for sputtering first on glass substrate 1,
Further spin coating prepares the hole transmission layers 3 such as PEDOT or NiO, further spin coating on the hole transport layer on the transparent electrodes
Prepare CdSe/ZnThe quantum dot light emitting layers such as S 4, further spin coating prepares Z on quantum dot light emitting layernO or TiO2Equal electron transfer layers
5, further grid electrode 6 is prepared by the method that exposure mask is deposited on the electron transport layer or spin coating graphene film forms grid
Electrode (regulates and controls grid electrode cell size by cover board pattern or graphene liquid concentration), further by spin-coating method in grid electrode
The organic insulating medium layers 7 such as upper preparation PMMA prepare S with sputtering methodiO2And SiNxEqual inorganic insulations dielectric layer 7, further
C60, PCBM, Z are prepared on insulating medium layer by spin-coating methodnO or TiO2Etc. n-type doping layers 8, further by spin-coating method in N
P is prepared on type doped layerbThe quantum dots infrared electro such as S quantum dot or Ge quantum dot conversion layer 9 is further being measured by spin-coating method
The p-type doped layers 10 such as PVK are prepared on son point infrared electro conversion layer, further by the method for vacuum evaporation in p-type doped layer
Passive electrode 11 after upper preparation.
The present invention is imitated using colloidal semiconductor quantum dot as photoelectric conversion material using the size confinement of semiconductor-quantum-point
It answers, is regulated and controled by material component to semiconductor-quantum-point and quantum dot size, while realizing optical electrical and electrical/optical conversion.With normal
Basic cell structure of the lower thin film transistor (TFT) prepared of temperature as circuit, breaks through the integrated carrier of optical detection/photoelectric display and puts
Big driving, integrated device technology of preparing is compatible and critical issue that electricity driving is compatible, with high performance thin film transistor as
Bridge, final realization quantum dot infrared acquisition/quantum dot visible light show integrated.
Claims (10)
1. a kind of infrared acquisition based on semiconductor-quantum-point-visible light shows integrated system, it is characterised in that：The system is under
It up successively include transparent substrate (1), transparent electrode (2), hole transmission layer (3), quantum dot light emitting layer (4), electron transfer layer
(5), grid electrode (6), insulating medium layer (7), p-type doped layer (8), quantum dot infrared electro conversion layer (9), n-type doping layer
It (10) and rear passive electrode (11) further include, infrared acquisition structure power supply (12) and visible light light emitting structure power supply (13)；
The transparent electrode (2) is connected with the anode of visible light light emitting structure power supply (13)；
The cathode and infrared acquisition structure power supply (12) of the grid electrode (6) and visible light light emitting structure power supply (13)
Cathode is connected；
Passive electrode (11) is connected with the anode of infrared acquisition structure power supply (12) after described.
2. a kind of infrared acquisition based on semiconductor-quantum-point according to claim 1-visible light shows integrated system,
It is characterized in that：The transparent substrate (1) is glass substrate or flexible plastic substrates.
3. a kind of infrared acquisition based on semiconductor-quantum-point according to claim 1-visible light shows integrated system,
It is characterized in that：The transparent electrode (2) is transparent indium-tin oxide electrode or fluorine-doped tin oxide electrode.
4. a kind of infrared acquisition based on semiconductor-quantum-point according to claim 1-visible light shows integrated system,
It is characterized in that：The quantum dot light emitting layer (4) is CdSe quantum dot, MAPbIxBr3-xOrgano-mineral complexing perovskite quantum dot or
CsPbIxBr3-xInorganic perovskite quantum dot.
5. a kind of infrared acquisition based on semiconductor-quantum-point according to claim 1-visible light shows integrated system,
It is characterized in that：The grid electrode (6) is made of Al metal material, or is made of grapheme two-dimension material, which sets
There are several electrode fenestras, the signal electric field that infrared detection members are formed adjusts quantum dot light emitting performance by electrode fenestra
Control.
6. a kind of infrared acquisition based on semiconductor-quantum-point according to claim 1-visible light shows integrated system,
It is characterized in that：Insulating medium layer (7) thickness is less than 100nm.
7. a kind of infrared acquisition based on semiconductor-quantum-point according to claim 1-visible light shows integrated system,
It is characterized in that：The p-type doped layer (8) be poly (Nvinylcarbazole) PVK, NN'-bis (4-butylphenyl)-N,
Poly-TPD or Spiro-OMeTAD layers of-benzi of N'-bis (phenyl).
8. a kind of prepare the described in any item infrared acquisition based on the semiconductor-quantum-point-visible light display sets of claim 1-7
At the method for system, it is characterised in that：Transparent electrode is prepared using the method for sputtering on the transparent substrate first, further saturating
Spin coating prepares hole transmission layer on prescribed electrode, and further spin coating prepares quantum dot light emitting layer on the hole transport layer, further exists
Spin coating prepares electron transfer layer on quantum dot light emitting layer, further prepares net on the electron transport layer by the method that exposure mask is deposited
Lattice electrode or spin coating graphene film form grid electrode, and it is organic absolutely that PMMA is further prepared on grid electrode by spin-coating method
Edge dielectric layer prepares inorganic insulation dielectric layer with sputtering method, and p-type is further prepared on insulating medium layer by spin-coating method
Doped layer further prepares quantum dot infrared electro conversion layer by spin-coating method in p-type doped layer, further passes through spin-coating method
N-type doping layer is prepared on quantum dot infrared electro conversion layer, is further made in n-type doping layer by the method being evaporated in vacuo
Standby rear passive electrode.
9. the imaging method that a kind of infrared acquisition based on semiconductor-quantum-point-visible light shows integrated system, it is characterised in that：
This method shows integrated system using the described in any item infrared acquisition-visible lights based on semiconductor-quantum-point of claim 1-7
System generates light induced electron/hole pair, in infrared acquisition when short-wave infrared photon is incident on quantum dot infrared electro conversion layer
Under the electric field action of structure power supply (12) reverse biased, light induced electron drifts about upwards, is received by infrared acquisition structure power supply；Light
Raw hole drifts about downwards, and by the barrier of insulating medium layer (7), photohole generates charge accumulated in insulating medium layer upper end,
The charge accumulated generates induction electronics in insulating medium layer lower end by electric charge induction, and induction electronics is through grid electrode (6)
Electrode fenestra generates regulation to the electric field of quantum dot light emitting layer (4)；Under visible light light emitting structure power supply (13) effect, electronics is incuded
It drifts about from the top down, hole then passes through transparent electrode (2) and drifts about from bottom to top；Electrons and holes are multiple in quantum dot light emitting layer (4)
It closes, generates VISIBLE LIGHT EMISSION.
10. a kind of method that incident infrared image is converted directly into visible images according to claim 9, special
Sign is：Grid electrode, transparent electrode and rear passive electrode be respectively vertical-channel thin-film transistor structure source electrode, drain electrode and
Grid is modulated the charge accumulated of vertical-channel thin film transistor (TFT) by the incident intensity of infrared photon, realizes detectable signal
Amplification, and then regulate and control the current between the source and the drain, to change visible light display brightness.
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| CN109870238A (en) * | 2019-02-26 | 2019-06-11 | 东南大学 | Infrared-Visible image up-conversion device and imaging method based on semiconductor-quantum-point and liquid crystal |
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| CN112599646A (en) * | 2020-12-25 | 2021-04-02 | 惠州学院 | Full-spectrum photoelectric dual-channel device and preparation method and application thereof |
| CN113097331A (en) * | 2021-02-24 | 2021-07-09 | 重庆科技学院 | Infrared detector based on graphene and quantum dots |
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| WO2023159398A1 (en) * | 2022-02-23 | 2023-08-31 | 京东方科技集团股份有限公司 | Light-emitting device and preparation method therefor, and display panel and display apparatus |
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