CN113471187A - Light emitting diode display panel and light emitting diode display device - Google Patents
Light emitting diode display panel and light emitting diode display device Download PDFInfo
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- CN113471187A CN113471187A CN202110734713.0A CN202110734713A CN113471187A CN 113471187 A CN113471187 A CN 113471187A CN 202110734713 A CN202110734713 A CN 202110734713A CN 113471187 A CN113471187 A CN 113471187A
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- display panel
- emitting diode
- light
- light emitting
- diode display
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- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000003287 optical effect Effects 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000003921 oil Substances 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000002708 enhancing effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 230000003760 hair shine Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 15
- 239000011521 glass Substances 0.000 description 14
- 239000002096 quantum dot Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
Abstract
The application discloses a light emitting diode display panel and a light emitting diode display device. The light emitting diode display panel includes: a substrate; and a light emitting diode chip disposed on the substrate; wherein, the LED chip includes: a reflective cavity comprising a reflective portion; and a light source disposed within the reflective cavity, the reflective portion forming an open structure around a periphery of the light source. The application provides a light emitting diode display panel and light emitting diode display device reflects through the partial light that the reflection cavity sent the light source to improve the luminous optical linearity of emitting diode chip, reduce the cross color problem that the side shines and brings, and then solve light emitting diode display panel's cross color problem, guarantee the colourity of the image that light emitting diode display panel shows.
Description
Technical Field
The application relates to the technical field of display, in particular to a light-emitting diode display panel and a light-emitting diode display device.
Background
In the prior art, Light Emitting Diode (LED) display panels are usually implemented by combining a Light-Emitting Diode (LED) chip with a quantum dot layer. The existing light-emitting diode display panel comprises a substrate and a light-emitting diode chip array arranged on the substrate, wherein the light-emitting diode chip array comprises a plurality of light-emitting diode chips arranged in an array, and the problem of color cross easily occurs when the existing light-emitting diode display panel emits light because the distance between the light-emitting diode chips is smaller and smaller.
Disclosure of Invention
The application provides a light emitting diode display panel and a light emitting diode display device, which can solve the color cross problem of the light emitting diode display panel and ensure the chromaticity of an image displayed by the light emitting diode display panel.
In a first aspect, the present application provides a light emitting diode display panel, comprising:
a substrate; and
a light emitting diode chip disposed on the substrate;
wherein, the LED chip includes:
a reflective cavity comprising a reflective portion; and
a light source disposed within the reflective cavity, the reflective portion forming an open structure around a periphery of the light source.
In the light emitting diode display panel provided by the application, the reflection cavity further comprises a supporting portion, the reflection portion surrounds the periphery of the supporting portion, and the supporting portion and the opening structure are arranged oppositely.
In the light emitting diode display panel provided by the application, the surface of the reflecting part facing to the light source side is an inner concave surface.
In the light emitting diode display panel provided by the application, the surface of the reflecting part facing to the light source side is further provided with an optical reflecting film for enhancing the reflecting effect.
In the light emitting diode display panel provided by the application, the material of the optical reflection film comprises silicon oxynitride and silicon dioxide.
In the light emitting diode display panel that this application provided, the concave surface is the arcwall face, just the light source with the centre of a circle of arcwall face corresponds the setting.
In the led display panel provided by the present application, a surface of the reflection portion facing the light source is a reflection plane.
In the led display panel provided by the present application, the material of the reflective plane is white oil.
In the light emitting diode display panel provided by the present application, the light source is a blue light emitting light source.
In a second aspect, the present application further provides an led display device, which includes the led display panel and a control board connected to the led display panel, wherein the control board is used to drive the led display panel.
The application provides a light emitting diode display panel and light emitting diode display device reflects through the partial light that the reflection cavity sent the light source to improve the luminous optical linearity of emitting diode chip, reduce the cross color problem that the side shines and brings, and then solve light emitting diode display panel's cross color problem, guarantee the colourity of the image that light emitting diode display panel shows.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an led display panel according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of a first structure of an LED chip in the LED display panel shown in FIG. 1;
fig. 3 is a schematic structural diagram of a reflection portion in the led chip shown in fig. 2;
FIG. 4 is a second structural diagram of an LED chip in the LED display panel shown in FIG. 1;
FIG. 5 is a schematic structural diagram of a reflective portion and an optical reflective film of the LED chip shown in FIG. 4;
FIG. 6 is a schematic diagram of a third structure of an LED chip in the LED display panel shown in FIG. 1;
FIG. 7 is a schematic structural diagram of a reflection portion of the LED shown in FIG. 6;
fig. 8 is a schematic structural diagram of an led display device according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be understood that the detailed description and specific examples, while indicating the present application, are given by way of illustration and explanation only, and are not intended to limit the present application. The terms "first", "second", and the like in the claims and in the description of the present application are used for distinguishing between different objects and not for describing a particular order.
The embodiments of the present application provide an led display panel and an led display device, which are described in detail below. The light emitting diode display panel provided by the embodiment of the application is a display panel which realizes image display by taking a high-density micro-sized light emitting diode chip array integrated on a substrate as a display pixel, wherein the light emitting diode array comprises a plurality of light emitting diodes arranged in an array. It should be noted that the following description of the embodiments is not intended to limit the preferred order of the embodiments.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an led display panel according to an embodiment of the present disclosure. The led display panel 100 provided in the embodiment of the present application includes a substrate 101 and a plurality of led chips 102. The plurality of led chips 102 are disposed on the substrate 101, and the plurality of led chips 102 are arranged in an array.
It should be noted that in the led display panel 100 provided in the embodiment of the present application, the light emitted from the led chips 102 does not irradiate the adjacent led chips 102. In the led display panel in the prior art, because the light-emitting angle of the led chips is large and the distance between adjacent led chips is small, the light emitted by the led chips can irradiate the adjacent led chips, thereby causing color crosstalk.
The led display panel 100 in the embodiment of the present application is different from the led display panel in the prior art in that: the led chips 102 in the led display panel 100 provided in the embodiment of the present application are different from the led chips in the led display panel provided in the prior art, that is, the led chips 102 in the led display panel 100 provided in the embodiment of the present application are provided with a structure for inhibiting light from irradiating on the adjacent led chips 102, so that the light emitted by the led chips 102 cannot irradiate on the adjacent led chips 102.
In addition, in order to solve the color crosstalk problem, a black retaining wall is disposed between adjacent led chips to prevent light emitted from the led chips from passing through the black retaining wall, so that the light emitted from the led chips does not irradiate the adjacent led chips. However, after the black retaining wall is increased, the edge of the process of transferring the led chip by a large amount is extruded, the SMT process precision requirement of the led chip is higher, the yield is reduced, and mass production is not facilitated.
Specifically, referring to fig. 2, fig. 2 is a first structural schematic diagram of a light emitting diode chip in the light emitting diode display panel shown in fig. 1. Referring to fig. 1 and 2, the led chip 102 includes a reflective cavity 10 and a light source 20. The reflective cavity 10 includes a reflective portion 11. The reflection part 11 forms an opening structure 12 around the circumference of the light source 20.
It should be noted that, in the led display panel 100 provided in the embodiment of the present application, the reflecting portion 11 in the reflecting cavity 10 reflects a part of light emitted by the light source 20, so as to improve the optical linearity of light emitted by the led chip 102, reduce the color crosstalk problem caused by side illumination, further solve the color crosstalk problem of the led display panel 100, and ensure the chromaticity of an image displayed by the led display panel 100.
For example, when a led chip 102 emits light, the emitted light includes side light. In the led display panel of the prior art, the side light of each led chip may cause a color crosstalk problem with the adjacent led chip. In the led display panel 100 according to the embodiment of the present disclosure, the reflective portion 11 is disposed in each led chip 102, and can reflect the side light emitted from the light source 20, so as to solve the color crosstalk problem of the led display panel 100.
Wherein, the reflective cavity 10 further comprises a supporting portion 13. The reflection portion 11 surrounds the periphery of the support portion 13, and the support portion 13 is disposed opposite to the opening structure 12. It is understood that the supporting portion 13 serves to support the reflecting portion 11 such that the reflecting portion 11 can be disposed around the circumference of the light source 20. The surface a of the reflection portion 11 on the side facing the light source 20 is an inner concave surface. That is, in the embodiment of the present application, by setting the surface a of the reflection portion 11 on the side facing the light source 20 as an inner concave surface, the inner concave surface is formed to reflect part of the light emitted from the light source 20 as a reflection surface.
Further, the led display panel 100 further includes a quantum dot layer 103. The quantum dot layer 103 may be disposed in various ways, for example, the quantum dot layer 103 may be disposed in the led chip 102. As another example, the quantum dot layer 103 may be disposed on the surface of the light emitting diode chip 102.
In the embodiment of the present application, the quantum dot layer 103 is correspondingly disposed on the opening structure 12. That is, the quantum dot layer 103 is provided above the light source 20 in the embodiment of the present application. The light emitted from the light source 20 also includes front light, which is light perpendicular to the quantum dot layer 103. The front light emitted from the light source 20 is incident on the quantum dot layer 103 through the opening structure 12, and the side light emitted from the light source 20 is reflected by the reflection portion 11, so that the side light is not incident on the adjacent led chip 102, and part of the side light is reflected to be incident on the quantum dot layer 103 through the opening structure 12, thereby improving the light utilization rate.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a reflection portion in the light emitting diode chip shown in fig. 2. As shown in fig. 1, 2, and 3, the reflection unit 11 includes a glass substrate 111 and a film layer 112 disposed on the glass substrate 111. The material of the film layer 112 is silver. Wherein, the other surface of the glass substrate 111 opposite to the surface of the side where the film layer 112 is disposed faces the light source 20. In one embodiment, the glass substrate 111 may have a thickness of 0.1 mm. The thickness of the film layer 112 may be 2 microns.
Further, the concave surface is an arc surface, and the light source 20 is arranged corresponding to the center of the arc surface. That is, this application embodiment is through the position department that locates the centre of a circle with light source 20 setting at the arcwall face to improvement light reflection effect that can be further avoids the light scattering, improves light utilization ratio. In the actual production process, the distance from the incident position of the light source 20 to the reflecting part 11 is the radius of the arc-shaped surface. The corresponding circular grinding wheel can be selected according to the radius to grind to form an arc-shaped surface.
Referring to fig. 4, fig. 4 is a second structural diagram of an led chip in the led display panel shown in fig. 1. The led chip 102 shown in fig. 4 differs from the led chip 102 shown in fig. 2 in that: the led chip 102 shown in fig. 4 further includes an optical reflection film 14 for enhancing the reflection effect.
Specifically, referring to fig. 5, fig. 5 is a schematic structural view of the reflection portion and the optical reflection film in the light emitting diode chip shown in fig. 4. As shown in fig. 1, 4, and 5, the reflection part 11 includes a glass substrate 111, a film layer 112 disposed on one side of the glass substrate 111, and an optical reflection film 14 disposed on the other side of the glass substrate 111. The material of the film layer 112 is silver. The material of the optically reflective film 14 includes silicon oxynitride and silicon dioxide.
Wherein the surface of the glass substrate 111 on the side where the optical reflection film 14 is provided faces the light source 20. In one embodiment, the glass substrate 111 may have a thickness of 0.1 mm. The thickness of the film layer 112 may be 2 microns. The thickness of the optically reflective film 14 can be 0.5 microns.
Referring to fig. 6, fig. 6 is a schematic diagram of a third structure of an led chip in the led display panel shown in fig. 1. The led chip 102 shown in fig. 6 differs from the led chip 102 shown in fig. 2 in that: in the light emitting diode chip 102 shown in fig. 6, a surface B of the reflection portion 11 facing the light source is a reflection plane.
Specifically, referring to fig. 7, fig. 7 is a schematic structural diagram of a reflection portion in the light emitting diode shown in fig. 6. As shown in fig. 1, 6, and 7, the reflection part 11 includes a glass substrate 111, a film layer 112 disposed on one side of the glass substrate 111, and white oil 15 disposed on the other side of the glass substrate 111. The material of the film layer 112 is silver.
Wherein the surface of the glass substrate 111 on the side where the white oil 15 is provided faces the light source 20. In one embodiment, the glass substrate 111 may have a thickness of 0.1 mm. The thickness of the film layer 112 may be 2 microns. The thickness of the white oil 15 may be 25 microns.
The application provides a light emitting diode display panel reflects through the partial light that the reflection cavity sent the light source to improve the luminous optical linearity of emitting diode chip, reduce the cross color problem that the side was shone and is brought, and then solve light emitting diode display panel's cross color problem, guarantee the colourity of the image that light emitting diode display panel shows.
Referring to fig. 8, fig. 8 is a schematic structural diagram of a light emitting diode display device according to an embodiment of the present disclosure. The led display device 1000 according to the embodiment of the present disclosure includes an led display panel 100 and a control board 200 connected to the led display panel 100. The control board 200 is used to drive the led display panel 100. The specific structure of the led display panel 100 can refer to the led display panel 100 shown above, which is not described herein.
The application provides a light emitting diode display device reflects through the partial light that the reflection cavity sent the light source to improve the luminous optical linearity of emitting diode chip, reduce the cross color problem that the side was shone and is brought, and then solve light emitting diode display panel's cross color problem, guarantee the colourity of the image that light emitting diode display panel shows.
The driving circuit and the display device provided in the embodiments of the present application are described in detail above, and the principles and embodiments of the present application are described herein by applying specific examples, and the description of the embodiments is only used to help understanding the method and the core idea of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (10)
1. A light emitting diode display panel, comprising:
a substrate; and
a light emitting diode chip disposed on the substrate;
wherein, the LED chip includes:
a reflective cavity comprising a reflective portion; and
a light source disposed within the reflective cavity, the reflective portion forming an open structure around a periphery of the light source.
2. The led display panel of claim 1, wherein the reflective cavity further comprises a support portion, the reflective portion surrounds a periphery of the support portion, and the support portion is disposed opposite to the opening structure.
3. The light-emitting diode display panel according to claim 1, wherein a surface of the reflection portion on a side facing the light source is an inner concave surface.
4. The light-emitting diode display panel according to claim 3, wherein a surface of the reflection portion on a side facing the light source is further provided with an optical reflection film for enhancing a reflection effect.
5. The LED display panel of claim 4, wherein the material of the optically reflective film comprises silicon oxynitride and silicon dioxide.
6. The LED display panel of claim 3, wherein the inner concave surface is an arc surface, and the light source is disposed corresponding to a center of the arc surface.
7. The light-emitting diode display panel according to claim 1, wherein a surface of the reflection portion on a side facing the light source is a reflection plane.
8. The LED display panel of claim 7, wherein the reflective surface is made of white oil.
9. The light-emitting diode display panel according to claim 1, wherein the light source is a blue light-emitting light source.
10. An led display apparatus, comprising the led display panel of any one of claims 1 to 9 and a control board connected to the led display panel, wherein the control board is configured to drive the led display panel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110734713.0A CN113471187A (en) | 2021-06-30 | 2021-06-30 | Light emitting diode display panel and light emitting diode display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110734713.0A CN113471187A (en) | 2021-06-30 | 2021-06-30 | Light emitting diode display panel and light emitting diode display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113471187A true CN113471187A (en) | 2021-10-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110734713.0A Pending CN113471187A (en) | 2021-06-30 | 2021-06-30 | Light emitting diode display panel and light emitting diode display device |
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| CN (1) | CN113471187A (en) |
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| CN204481049U (en) * | 2015-03-03 | 2015-07-15 | 杭州士兰明芯科技有限公司 | LED ray structure |
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