CN111524931A - Mini LED display panel, preparation method thereof and display device - Google Patents
Mini LED display panel, preparation method thereof and display device Download PDFInfo
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- CN111524931A CN111524931A CN202010394188.8A CN202010394188A CN111524931A CN 111524931 A CN111524931 A CN 111524931A CN 202010394188 A CN202010394188 A CN 202010394188A CN 111524931 A CN111524931 A CN 111524931A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Abstract
The application relates to the technical field of display, and discloses a Mini LED display panel and a preparation method and a display device thereof, wherein the Mini LED display panel comprises: a substrate base plate; the LED chip comprises a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and an LED chip which are sequentially arranged on a substrate; and the reflecting layer is positioned on one side of the first metal layer, which is far away from the first insulating layer, and is used for reflecting the light emitted by the LED chip. The application discloses Mini LED display panel can send the light of LED downward emission back to improve the utilization ratio of LED light, increase the light efficiency.
Description
Technical Field
The application relates to the technical field of display, in particular to a Mini LED display panel, a preparation method thereof and a display device.
Background
HDR (high dynamic range imaging) technology can significantly enhance the contrast and viewing experience of LCDs, rendering perfect HDR requires high contrast, excellent color rendering. The multi-partition Local dimming Mini LED area light source can realize the HDR technology, the display effect is greatly improved, and a Cu (copper) process with the thickness of 1-6 um of low resistance is required due to large current load.
Mini LED backlight in the market at present is all based on well small Cu foil PCB (printed circuit board) preparation or concatenation and form, does not have glass base product, because the luminous direction of LED itself all has in all directions, and is closer to the LED moreover, and the light intensity is higher. At present, in order to utilize light emitted from the left side and the right side of an LED, white oil is brushed beside the LED, so that the light on the side can be reflected, and then the light right below the LED is not reflected, so that waste is caused because no way of utilization is available.
Disclosure of Invention
The application provides a Mini LED display panel can send the light of LED downward emission back to improve the utilization ratio of LED light, increase the light efficiency.
In order to achieve the above object, the present application provides a Mini LED display panel, comprising:
a substrate base plate;
the LED chip comprises a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and an LED chip which are sequentially arranged on the substrate base plate;
and the reflecting layer is positioned on one side of the first metal layer, which is far away from the first insulating layer, and is used for reflecting the light emitted by the LED chip.
Above-mentioned Mini LED display panel, owing to set up the reflection stratum in one side that first metal level deviates from the first insulating layer, when LED downwardly emitting's light passed through the reflection stratum, the reflection stratum can change light reflection into upwards light-emitting, rather than passing the substrate base plate, from this, LED downwardly emitting's light also can be utilized through the reflection stratum reflection, has improved the utilization ratio of LED light, has increased the light efficiency.
Therefore, the Mini LED display panel that this application provided sets up the reflection stratum through the one side that deviates from the first insulating layer at first metal level, can reflect the light of LED downward emission to improve the utilization ratio of LED light, increased the light efficiency.
Preferably, the reflective layer is located on a side of the substrate base plate facing away from the first metal layer.
Preferably, the material of the reflecting layer is one or more of silver, aluminum, white oil and white glue.
Preferably, the reflective layer is located between the first metal layer and the substrate base plate.
Preferably, the reflective layer includes a polyimide resin layer on the base substrate and a buffer layer on the polyimide resin layer facing the first metal layer, wherein the polyimide resin layer has a light reflective material therein.
Preferably, a planarization layer is further disposed between the first metal layer and the first insulating layer, and the planarization layer has a light reflective material therein to form the reflective layer.
Preferably, the LED chip further comprises a white oil reflecting layer positioned at the side edge of the LED chip.
Preferably, the application also provides a preparation method of the Mini LED display panel, which comprises the following steps:
a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and an LED chip are formed on a substrate, and a reflecting layer used for reflecting light emitted by the LED chip is formed on one side, away from the first insulating layer, of the first metal layer.
Preferably, a reflective layer for reflecting light emitted by the LED chip is formed on a side of the first metal layer facing away from the first insulating layer, including:
after a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and an LED chip are sequentially formed on the substrate base plate, the reflecting layer is formed on one side of the substrate base plate, which is far away from the first metal layer.
Preferably, a reflective layer for reflecting light emitted by the LED chip is formed on a side of the first metal layer facing away from the first insulating layer, including:
forming a reflective layer on the substrate before forming the first metal layer on the substrate.
Preferably, a reflective layer for reflecting light emitted by the LED chip is formed on a side of the first metal layer facing away from the first insulating layer, including:
after forming a first metal layer on the substrate, a planarization layer is formed on the first metal layer, and a light reflective material is added in the planarization layer to form the reflective layer.
Preferably, the present application further provides a display device including the Mini LED display panel described in any one of the above.
Drawings
Fig. 1 is a schematic cross-sectional view of a Mini LED display panel according to an embodiment of the present application;
fig. 2 is a schematic cross-sectional view of a Mini LED display panel according to an embodiment of the present application;
fig. 3 is a schematic cross-sectional view of a Mini LED display panel in the embodiment of the present application.
In the figure:
1-a substrate base plate; 2-a reflective layer; 3-a first metal layer; 4-a planarization layer; 5-a first insulating layer; 6-a second metal layer; 7-a second insulating layer; 8-LED chips; 9-white oil reflecting layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1 or fig. 2, the present invention provides a Mini LED display panel, including: a base substrate 1; the LED chip comprises a first metal layer 3, a planarization layer 4, a first insulating layer 5, a second metal layer 7, a second insulating layer and an LED chip 8 which are sequentially arranged on a substrate base plate 1; a reflective layer 2 on the side of the first metal layer 3 facing away from the first insulating layer 5, the reflective layer 2 being adapted to reflect light emitted by the LED chip 8.
Above-mentioned Mini LED display panel, because the light all directions that the LED lamp sent all have, set up reflection stratum 2 in one side that first metal level 3 deviates from first insulating layer 5, when the light of LED lamp downwardly emitting passed through reflection stratum 2, reflection stratum 2 can make light become upwards light-emitting with light reflection to make the light of LED lamp downwardly emitting also can be utilized, further improved the utilization ratio of LED light, increased the light efficiency.
Specifically, the material of the first metal layer 3 is Cu metal, and the first metal layer 3 is a current signal transmission layer, and the thickness of Cu is 1 to 10um due to low resistance. The planarization layer 4 is used for filling the gap between the wires of the first metal layer 3, so that the flatness of the back plate can be improved, and the reflectivity of the back plate can be increased. The first insulating layer 5 can increase the adhesion of the second metal layer 7, and the material thereof can be silicon nitride, silicon oxide, silicon oxynitride, etc. The material of the second metal layer 7 is Cu metal, the second metal layer 7 is a partition signal series layer and an LED Bonding area, and the second insulating layer is a protective layer of the second metal layer 7.
In a possible embodiment, as shown in fig. 1, the reflective layer 2 may be disposed on a side of the substrate base plate 1 away from the first metal layer 3, the reflective layer 2 may be formed by coating on a side of the substrate base plate 1 away from the first metal layer 3, and the material of the reflective layer 2 may be one or a combination of films with a reflectivity of greater than or equal to 90%, such as silver, aluminum, white oil, and white glue. The reflecting layer 2 can reflect light upwards when the light emitted by the LED lamp passes through the substrate base plate 1 and passes through the reflecting layer 2, so that the light utilization efficiency is improved.
In a possible embodiment, as shown in fig. 2, the reflective layer 2 may also be disposed between the substrate 1 and the first metal layer 3. Specifically, the reflective layer 2 includes a polyimide resin layer on the substrate base plate 1 and a buffer layer on a side of the polyimide resin layer away from the substrate base plate 1, wherein the polyimide resin layer can be fixed on the substrate base plate 1 by a coating method or a bonding method, the thickness of the polyimide resin layer is 1-20 um, and the blue light reflectivity of the polyimide resin layer is greater than 80%, in addition, the polyimide resin layer further includes a light reflective material, such as a white filler, and a white polyimide film can be obtained by drying and imidization. The buffer layer can adjust the stress of the whole substrate, and the material of the buffer layer can be one or a combination of silicon nitride, silicon oxide and silicon oxynitride. Above-mentioned reflecting layer 2, when the light that the LED lamp sent passed through the polyimide resin layer, because polyimide resin layer contains light reflecting material, can upwards reflect light, improved the efficiency that light utilized.
In a possible embodiment, as shown in fig. 3, a light-reflecting material, such as a white filler, is further added to the planarization layer 4 in this embodiment, so that the planarization layer 4 functions as the reflective layer 2, and when light emitted from the LED passes through the planarization layer 4, the light can be reflected upwards due to the light-reflecting material contained in the planarization layer 4, thereby improving the efficiency of light utilization. And the reflecting layer 2 is formed by utilizing the flattening layer 4, so that the process steps can be saved, and the aim of simplifying the process is fulfilled.
Further, the Mini LED display panel may further include a white oil reflective layer 9 on the second insulating layer and on the LED chip 8, and the white oil reflective layer 9 may reflect light emitted from the LED to the side, so as to further improve the efficiency of light utilization.
Based on the same invention idea, the present application may further provide a display device, including the above-mentioned Mini LED display panel, because the above-mentioned Mini LED display panel is provided with the reflective layer 2 between the first metal layer 3 and the substrate base plate 1, the light emitted downward by the LEDs can be reflected so that the light is emitted upward, thereby improving the utilization efficiency of the light, and further ensuring the display effect of the display device.
Based on the same invention idea, the application can also provide a preparation method of the Mini LED display panel, which comprises the following steps: a first metal layer 3, a planarization layer 4, a first insulating layer 5, a second metal layer 7, a second insulating layer, and an LED chip 8 are formed on the base substrate 1, and a reflective layer 2 for reflecting light emitted from the LED chip 8 is formed on a side of the first metal layer 3 facing away from the first insulating layer 5.
According to the preparation method, the reflection layer 2 is prepared on the side, away from the first insulation layer 5, of the first metal layer 3, so that light emitted downwards by the LED chip 8 can be reflected to be emitted upwards when passing through the reflection layer 2, the utilization efficiency of light is improved, and the display effect is improved.
In a possible embodiment, the reflective layer 2 may be prepared on a side of the substrate base plate 1 away from the first metal layer 3, and in this embodiment, the preparation method may include:
s101: a first metal layer 3 is formed on a substrate base plate 1, the material of the first metal layer 3 is Cu metal, the Cu metal layer is used as a cathode and anode signal line, and the thickness of the Cu metal layer can be set to be 1-10 um according to the magnitude of current-carrying resistance. Wherein, the Cu metal layer can be finished by sputtering, electroplating, chemical plating and the like;
s102: forming a planarization layer 4 on the first metal layer 3, wherein the planarization layer 4 can be an organic film and is used for filling and leveling gaps between the wires of the first metal layer 3, so that the problem that a subsequent process has a large section difference and LED displacement cannot occur during LED bonding is avoided, the flatness of the backboard is improved, and the reflectivity of the backboard is increased;
s103: depositing a first insulating layer 5 on the planarization layer 4 for increasing the adhesion of the second metal layer 7, wherein the material may be silicon nitride, silicon oxide, silicon oxynitride, or the like;
s104: forming a second metal layer 7 on the first insulating layer 5, wherein the second metal layer 7 is made of a Cu metal and is used for functioning as a cathode and an anode of the series-connected LED, and the thickness of the second metal layer is not required to be too thick;
s105: forming a second insulating layer on the second metal layer 7 by deposition and patterning;
s106: LED bonding is carried out on the second insulating layer;
s107: the reflecting layer 2 is formed on one side of the substrate base plate 1, which is far away from the first metal layer 3, and can be completed in a screen printing mode or a baking and curing mode after exposure of photosensitive white oil, and the material of the reflecting layer 2 can be one or a combination of film layers with the reflectivity of more than or equal to 90% such as silver, aluminum, white oil, white glue and the like.
In a possible embodiment, the reflective layer 2 may be further prepared between the substrate 1 and the first metal layer 3, and in this embodiment, the preparation method may include:
s201: forming a reflective layer 2 on a base substrate 1, the forming the reflective layer 2 including: a polyimide film is coated or attached on the substrate base plate 1, and the thickness of the polyimide film is 1-20 um; forming a buffer layer on the polyimide film for adjusting the stress of the substrate, wherein the buffer layer can be made of one or more of silicon nitride, silicon oxide and silicon oxynitride;
s202: a first metal layer 3 is formed on the reflective layer 2, the first metal layer 3 is made of Cu metal, the Cu metal layer is used as a cathode/anode signal line, and the thickness of the Cu metal layer can be set to be 1-10 um according to the magnitude of current-carrying resistance. Wherein, the Cu metal layer can be finished by sputtering, electroplating, chemical plating and the like;
s203: forming a planarization layer 4 on the first metal layer 3, wherein the planarization layer 4 can be an organic film and is used for filling and leveling gaps between the wires of the first metal layer 3, so that the problem that a subsequent process has a large section difference and LED displacement cannot occur during LED bonding is avoided, the flatness of the backboard is improved, and the reflectivity of the backboard is increased;
s204: depositing a first insulating layer 5 on the planarization layer 4 for increasing the adhesion of the second metal layer 7, wherein the material may be silicon nitride, silicon oxide, silicon oxynitride, or the like;
s205: forming a second metal layer 7 on the first insulating layer 5, wherein the second metal layer 7 is made of a Cu metal and is used for functioning as a cathode and an anode of the series-connected LED, and the thickness of the second metal layer is not required to be too thick;
s206: forming a second insulating layer on the second metal layer 7 by deposition and patterning;
s207: and carrying out LED bonding on the second insulating layer.
In a possible embodiment, when the planarization layer 4 is prepared, the planarization layer 4 is used as the reflective layer 2, and in this embodiment, the preparation method may include:
s301: a first metal layer 3 is formed on a substrate base plate 1, the material of the first metal layer 3 is Cu metal, the Cu metal layer is used as a cathode and anode signal line, and the thickness of the Cu metal layer can be set to be 1-10 um according to the magnitude of current-carrying resistance. Wherein, the Cu metal layer can be finished by sputtering, electroplating, chemical plating and the like;
s302: forming a planarization layer 4 on the first metal layer 3, and adding a light reflection material in the planarization layer 4 to enable the planarization layer 4 to be used as a reflection layer 2, wherein the planarization layer 4 can be an organic film and is used for filling gaps between wires of the first metal layer 3, so that the problem that a large section difference occurs in a subsequent process and LED displacement cannot occur during LED bonding is solved, the flatness of the backboard is improved, the reflectivity of the backboard is increased, and in addition, light reflected downwards by an LED can be reflected along an upward direction;
s303: depositing a first insulating layer 5 on the planarization layer 4 for increasing the adhesion of the second metal layer 7, wherein the material may be silicon nitride, silicon oxide, silicon oxynitride, or the like;
s304: forming a second metal layer 7 on the first insulating layer 5, wherein the second metal layer 7 is made of a Cu metal and is used for functioning as a cathode and an anode of the series-connected LED, and the thickness of the second metal layer is not required to be too thick;
s305: forming a second insulating layer on the second metal layer 7 by deposition and patterning;
s306: and carrying out LED bonding on the second insulating layer.
It will be apparent to those skilled in the art that various changes and modifications may be made in the embodiments of the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (12)
1. A Mini LED display panel, comprising:
a substrate base plate;
the LED chip comprises a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and an LED chip which are sequentially arranged on the substrate base plate;
and the reflecting layer is positioned on one side of the first metal layer, which is far away from the first insulating layer, and is used for reflecting the light emitted by the LED chip.
2. The Mini LED display panel of claim 1, wherein the reflective layer is on a side of the substrate base plate facing away from the first metal layer.
3. The Mini LED display panel of claim 2, wherein the reflective layer is made of one or more of silver, aluminum, white oil and white glue.
4. The Mini LED display panel of claim 1, wherein the reflective layer is located between the first metal layer and the substrate base plate.
5. The Mini LED display panel of claim 4, wherein the reflective layer comprises a polyimide resin layer on the base substrate and a buffer layer on the polyimide resin layer towards the first metal layer, wherein the polyimide resin layer has a light reflective material therein.
6. The Mini LED display panel of claim 1, wherein a planarization layer is further disposed between the first metal layer and the first insulating layer, the planarization layer having a light reflective material therein to form the reflective layer.
7. The Mini LED display panel of any one of claims 1 to 6, further comprising a white oil reflective layer on the side of the LED chips.
8. A preparation method of a Mini LED display panel is characterized by comprising the following steps:
a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and an LED chip are formed on a substrate, and a reflecting layer used for reflecting light emitted by the LED chip is formed on one side, away from the first insulating layer, of the first metal layer.
9. The method of claim 8, wherein forming a reflective layer on a side of the first metal layer facing away from the first insulating layer for reflecting light emitted by the LED chips comprises:
after a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and an LED chip are sequentially formed on the substrate base plate, the reflecting layer is formed on one side of the substrate base plate, which is far away from the first metal layer.
10. The method of claim 8, wherein forming a reflective layer on a side of the first metal layer facing away from the first insulating layer for reflecting light emitted by the LED chips comprises:
forming a reflective layer on the substrate before forming the first metal layer on the substrate.
11. The method of claim 8, wherein forming a reflective layer on a side of the first metal layer facing away from the first insulating layer for reflecting light emitted by the LED chips comprises:
after forming a first metal layer on the substrate, a planarization layer is formed on the first metal layer, and a light reflective material is added in the planarization layer to form the reflective layer.
12. A display device comprising the Mini LED display panel according to any one of claims 1 to 7.
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| CN202010394188.8A CN111524931A (en) | 2020-05-11 | 2020-05-11 | Mini LED display panel, preparation method thereof and display device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112669720A (en) * | 2021-01-12 | 2021-04-16 | Tcl华星光电技术有限公司 | LED panel and preparation method thereof |
| CN113437203A (en) * | 2021-06-28 | 2021-09-24 | 上海天马微电子有限公司 | Display panel and display device |
| CN113471187A (en) * | 2021-06-30 | 2021-10-01 | Tcl华星光电技术有限公司 | Light emitting diode display panel and light emitting diode display device |
| CN113838963A (en) * | 2021-09-14 | 2021-12-24 | Tcl华星光电技术有限公司 | Display panel and preparation method thereof |
| WO2022099862A1 (en) * | 2020-11-13 | 2022-05-19 | Tcl华星光电技术有限公司 | Backplane and led panel |
| WO2024026903A1 (en) * | 2022-08-01 | 2024-02-08 | Tcl华星光电技术有限公司 | Backlight plate and preparation method therefor, and display panel |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108761909A (en) * | 2018-05-28 | 2018-11-06 | 武汉华星光电技术有限公司 | A kind of LED area light source and preparation method thereof, display panel |
| CN109375422A (en) * | 2018-12-24 | 2019-02-22 | 厦门天马微电子有限公司 | Backlight module and display device |
| US20190097091A1 (en) * | 2017-04-07 | 2019-03-28 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Display device and led emitting light on four sides thereof |
| CN110890448A (en) * | 2019-11-18 | 2020-03-17 | 佛山市国星半导体技术有限公司 | Flip LED chip for backlight display and manufacturing method thereof |
-
2020
- 2020-05-11 CN CN202010394188.8A patent/CN111524931A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20190097091A1 (en) * | 2017-04-07 | 2019-03-28 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Display device and led emitting light on four sides thereof |
| CN108761909A (en) * | 2018-05-28 | 2018-11-06 | 武汉华星光电技术有限公司 | A kind of LED area light source and preparation method thereof, display panel |
| CN109375422A (en) * | 2018-12-24 | 2019-02-22 | 厦门天马微电子有限公司 | Backlight module and display device |
| CN110890448A (en) * | 2019-11-18 | 2020-03-17 | 佛山市国星半导体技术有限公司 | Flip LED chip for backlight display and manufacturing method thereof |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022099862A1 (en) * | 2020-11-13 | 2022-05-19 | Tcl华星光电技术有限公司 | Backplane and led panel |
| CN112669720A (en) * | 2021-01-12 | 2021-04-16 | Tcl华星光电技术有限公司 | LED panel and preparation method thereof |
| CN112669720B (en) * | 2021-01-12 | 2022-06-10 | Tcl华星光电技术有限公司 | LED panel and preparation method thereof |
| CN113437203A (en) * | 2021-06-28 | 2021-09-24 | 上海天马微电子有限公司 | Display panel and display device |
| CN113471187A (en) * | 2021-06-30 | 2021-10-01 | Tcl华星光电技术有限公司 | Light emitting diode display panel and light emitting diode display device |
| CN113838963A (en) * | 2021-09-14 | 2021-12-24 | Tcl华星光电技术有限公司 | Display panel and preparation method thereof |
| CN113838963B (en) * | 2021-09-14 | 2023-10-31 | Tcl华星光电技术有限公司 | Display panel and preparation method thereof |
| WO2024026903A1 (en) * | 2022-08-01 | 2024-02-08 | Tcl华星光电技术有限公司 | Backlight plate and preparation method therefor, and display panel |
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