CN113465764B - Analog output integrated temperature sensor - Google Patents
Analog output integrated temperature sensor Download PDFInfo
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- CN113465764B CN113465764B CN202010246243.9A CN202010246243A CN113465764B CN 113465764 B CN113465764 B CN 113465764B CN 202010246243 A CN202010246243 A CN 202010246243A CN 113465764 B CN113465764 B CN 113465764B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
- G01K7/20—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer in a specially-adapted circuit, e.g. bridge circuit
- G01K7/21—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer in a specially-adapted circuit, e.g. bridge circuit for modifying the output characteristic, e.g. linearising
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Abstract
The analog output integrated temperature sensor is characterized in that a band gap reference voltage circuit and an operational circuit are combined, so that two input ends of an operational amplifier in the operational circuit can input a zero-temperature-coefficient band gap reference voltage and a positive temperature coefficient voltage which exist in the band gap reference voltage circuit at the same time, and a linear analog output voltage which changes along with temperature changes is output at the output end of the operational amplifier, and the temperature sensing function is realized.
Description
Technical Field
The invention relates to a temperature sensor technology, in particular to an analog output integrated temperature sensor, which enables two input ends of an operational amplifier in an operational circuit to input zero temperature coefficient band-gap reference voltage and positive temperature coefficient voltage which exist in a band-gap reference voltage circuit simultaneously through the combination of a band-gap reference voltage circuit and the operational circuit so as to output linear analog output voltage which changes along with temperature change at the output end of the operational amplifier, thereby realizing the temperature sensing function.
Background
As for the temperature sensor, it is generally conceivable to use a temperature sensing material such as a thermistor. The present inventors have recognized that such temperature sensors made of temperature sensitive materials such as thermistors generally have the disadvantages of low accuracy, poor linearity, and inefficient integration. The inventor notices that no integrated analog linear output temperature sensor product with low power consumption, high precision and wide working power supply voltage range exists in China at present, and the integrated circuit chip market has great demand on the temperature sensor, so the invention of the temperature sensor is significant. The inventor believes that if a bandgap reference voltage circuit and an operational circuit are combined, and zero-temperature-coefficient bandgap reference voltage and positive temperature-coefficient voltage which exist in the bandgap reference voltage circuit are used as the input of two input ends of an operational amplifier in the operational circuit, linear analog output voltage which changes along with temperature changes can be output at the output end of the operational amplifier, so that the temperature sensing function is realized, and the integrated analog linear output temperature sensor product with low power consumption, high precision and wide working power supply voltage range is favorably produced to meet market demands. In view of the above, the present inventors have completed the present invention.
Disclosure of Invention
Aiming at the defects or shortcomings in the prior art, the invention provides the analog output integrated temperature sensor, and through the combination of the band gap reference voltage circuit and the operational circuit, two input ends of the operational amplifier in the operational circuit can input the zero-temperature-coefficient band gap reference voltage and the positive temperature coefficient voltage which exist in the band gap reference voltage circuit at the same time so as to output the linear analog output voltage which changes along with the temperature change at the output end of the operational amplifier, thereby realizing the temperature sensing function.
The technical scheme of the invention is as follows:
the analog output integrated temperature sensor is characterized by comprising an operational amplifier, wherein the output end of the operational amplifier is connected with an analog output voltage end, the positive input end of the operational amplifier is connected with a positive temperature coefficient voltage end in a band gap reference voltage circuit, the negative input end of the operational amplifier is connected with a zero temperature coefficient band gap reference voltage end in the band gap reference voltage circuit through a first resistor, and the negative input end of the operational amplifier is connected with a ground end through a second resistor.
And the negative input end of the operational amplifier is connected with the analog output voltage end through a third resistor.
The operational amplifier is a CLASS-AB CLASS operational amplifier.
The band-gap reference voltage circuit comprises a first NPN triode and a second NPN triode, bases of the first NPN triode and the second NPN triode are interconnected, the ratio of the number of the triodes in the first NPN triode to the number of the triodes in the second NPN triode is n:1,n is a natural number larger than 1, the base of the second NPN triode is connected with the zero-temperature-coefficient band-gap reference voltage end, an emitting electrode in the first NPN triode is connected with the positive temperature coefficient voltage end through a fourth resistor, an emitting electrode of the second NPN triode is connected with the positive temperature coefficient voltage end, and the positive temperature coefficient voltage end is connected with a grounding end through a fifth resistor.
The collector of the first NPN triode is respectively connected with the drain electrode and the grid electrode of a first PMOS tube and the grid electrode of a second PMOS tube, the source electrode of the first PMOS tube and the source electrode of the second PMOS tube are both connected with a power supply voltage end, and the drain electrode of the second PMOS tube is connected with the collector of the second NPN triode.
And the analog output voltage end is connected with a grounding end through a load capacitor.
A voltage V between the base and the emitter of the second NPN triode BE2 Has a negative temperature coefficient, the positive temperature coefficient voltage of the positive temperature coefficient voltage end is V ptat The zero temperature coefficient band gap reference voltage at the zero temperature coefficient band gap reference voltage end is V BG ，V BG ＝V BE2 +V ptat ，
Wherein K is Boltzmann's constant, T is a thermodynamic temperature, q is an amount of electron charge, n is n in said n:1, R 5 Is the resistance value of the fifth resistor, R 4 Is the resistance of the fourth resistor, ic Is the collector current of the second NPN triode, is the saturation current of the second NPN triode, V BE2 Having a negative temperature coefficient, V ptat With positive temperature coefficient, by setting R 4 And R 5 Obtaining a voltage V with zero temperature coefficient BG 。
The analog output voltage Vout of the analog output voltage terminal is determined by the following equation:
wherein R is 1 Is the resistance value of the first resistor, R 2 Is the resistance value of the second resistor, R 3 Is the resistance value of the third resistor.
The invention has the following technical effects: the invention relates to an analog output integrated temperature sensor which can simultaneously obtain a voltage V proportional to temperature by utilizing a band gap reference voltage circuit ptat And a temperature-independent voltage V BG This feature uses an operational circuit comprising an OPA and a resistor to couple V ptat And V BG As input, an analog output voltage V is obtained out Therefore, an integrated analog linear output temperature sensor product with low power consumption, high precision and wide working power supply voltage range is realized.
Invention V BE2 Having a negative temperature coefficient, V ptat With positive temperature coefficient, by arranging resistor R appropriately 4 And R 5 Can obtain a voltage V with zero temperature coefficient BG On the basis, the resistor R is reasonably arranged 1 ～R 3 The linear output relation of the required slope and intercept can be obtained, and the function of the temperature sensor is realized.
Drawings
FIG. 1 is a schematic diagram of an analog output integrated temperature sensor circuit according to the present invention.
The reference numbers are listed below: VDD-supply voltage terminal; an OPA-operational amplifier; VBG-bandgap reference voltage terminal (bandgap reference voltage V) BG Is a zero temperature coefficient voltage, V BG Is a negative temperature coefficient voltage V BE2 And the positive temperature coefficient voltage Vptat); vptat-positive temperature coefficient voltage terminal; vout-analog output voltage terminal; CL-load capacitance; GND-ground; mp 1-first PMOS tube; mp 2-second PMOS tube; BQ 1-first NPN triode; BQ 2-second NPN triode; n is 1-the triode number ratio or area ratio of the BQ1 to the BQ 2; R1-R5-first to fifth resistors; v BE1 -BQ1 base-emitter voltage;
V BE2 BQ2 base-emitter voltage (with negative temperature coefficient).
Detailed Description
The invention is described below with reference to the accompanying drawing (fig. 1).
FIG. 1 is a schematic diagram of an analog output integrated temperature sensor circuit according to the present invention. As shown in fig. 1, an analog output integrated temperature sensor includes an operational amplifier OPA, an output terminal of which is connected to an analog output voltage terminal Vout, a positive input terminal (+) of which is connected to a positive temperature coefficient voltage terminal Vptat in a bandgap reference voltage circuit, a negative input terminal (-) of which is connected to a zero temperature coefficient bandgap reference voltage terminal VBG in the bandgap reference voltage circuit through a first resistor R1, and a negative input terminal (-) of which is connected to a ground terminal GND through a second resistor R2. The negative input (-) of the operational amplifier OPA is connected to the analog output voltage terminal Vout through a third resistor R3. The operational amplifier OPA is a CLASS-AB CLASS operational amplifier. The band gap reference voltage circuit comprises a first NPN triode BQ1 and a second NPN triode BQ2, bases of the first NPN triode BQ1 and the second NPN triode BQ2 are mutually connected, the ratio of the number of the triodes in the first NPN triode BQ1 to the number of the triodes in the second NPN triode BQ2 is n:1,n is a natural number larger than 1, the base of the second NPN triode BQ2 is connected with a zero-temperature-coefficient band gap reference voltage end VBG, an emitting electrode in the first NPN triode BQ1 is connected with a positive temperature coefficient voltage end Vptat through a fourth resistor R4, an emitting electrode of the second NPN triode BQ2 is connected with the positive temperature coefficient voltage end Vptat, and the positive temperature coefficient voltage end Vptat is connected with a grounding terminal GND through a fifth resistor R5. The collector of the first NPN triode BQ1 is connected to the drain and the gate of the first PMOS transistor Mp1 and the gate of the second PMOS transistor Mp2, respectively, the source of the first PMOS transistor Mp1 and the source of the second PMOS transistor Mp2 are both connected to the supply voltage terminal VDD, and the drain of the second PMOS transistor Mp2 is connected to the collector of the second NPN triode BQ 2. The analog output voltage terminal Vout is connected to the ground terminal GND through a load capacitor CL.
The voltage V between the base electrode and the emitter electrode of the second NPN triode BQ2 BE2 Has a negative temperature coefficient, the positive temperature coefficient voltage of the positive temperature coefficient voltage end is V ptat Said zero temperature coefficient bandgap referenceThe zero temperature coefficient band gap reference voltage of the voltage end VBG is V BG ，V BG ＝V BE2 +V ptat ，
Wherein K is Boltzmann's constant, T is a thermodynamic temperature, q is an amount of electron charge, n is n in said n:1, R 5 Is the resistance value of the fifth resistor, R 4 Is the resistance of the fourth resistor, ic Is the collector current of the second NPN triode, is the saturation current of the second NPN triode, V BE2 Having a negative temperature coefficient, V ptat With positive temperature coefficient by setting R 4 And R 5 Obtaining a voltage V with zero temperature coefficient BG 。
The analog output voltage Vout of the analog output voltage terminal is determined by the following equation:
wherein R is 1 Is the resistance value of the first resistor, R 2 Is the resistance value of the second resistor, R 3 Is the resistance value of the third resistor.
The circuit structure schematic diagram of an analog output integrated temperature sensor shown in fig. 1 is composed of two parts, wherein the left part is a band gap reference voltage Bandgap generating circuit, and the right part is an operational circuit composed of an OPA and a resistor. The circuit shown on the left is the core of the Bandgap circuit, which is shown here to better illustrate the working principle of the whole temperature sensor. The triodes BQ1 and BQ2 are the core of the whole Bandgap circuit, and the number ratio of the triodes is n:1. The OPA is realized by a CLASS-AB operational amplifier, has strong driving capability and can typically drive a load capacitor of 1 nF. By setting a suitable resistance R 1 ～R 3 The resistance value of the temperature sensor can be flexibly designed into V which has different slope values and intercept and has a linear relation with the temperature out The output expression of the temperature sensor is derived below in conjunction with fig. 1.
The number ratio of the triodes BQ1 and BQ2 is n:1, so that Delta V can be obtained BE The expression of (a) is:
wherein K Is Boltzmann constant, T Is thermodynamic temperature, q Is electronic charge amount, ic Is collector current of the triode, is saturation current, if n triodes, the corresponding saturation current Is n × Is, and Δ V Is shown by the above formula BE Is linear with temperature, so that a voltage V proportional to the temperature can be obtained ptat The expression of (c) is:
on the basis, the band gap reference voltage V can be easily obtained BG The expression of (a) is:
V BG ＝V BE2 +V ptat (1-3)
V BE2 having a negative temperature coefficient, V ptat With positive temperature coefficient, by arranging resistor R appropriately 4 And R 5 Can obtain a voltage V of zero temperature coefficient BG 。
A Bandgap circuit simultaneously obtains a voltage V proportional to the temperature ptat And a temperature-independent voltage V BG Then, the OPA and the resistor are combined together by using an arithmetic circuit composed of the OPA and the resistor as shown in figure 1, and the output voltage V is obtained out ：
It can be seen that the resistor R is reasonably arranged 1 ～R 3 The linear output relation of the required slope and intercept can be obtained, and the function of the temperature sensor is realized.
It is pointed out here that the above description is helpful for the person skilled in the art to understand the invention, but does not limit the scope of protection of the invention. Any such equivalents, modifications and/or omissions as may be made without departing from the spirit and scope of the invention may be resorted to.
Claims (5)
1. An analog output integrated temperature sensor is characterized by comprising an operational amplifier, wherein the output end of the operational amplifier is connected with an analog output voltage end, the positive input end of the operational amplifier is connected with a positive temperature coefficient voltage end in a band gap reference voltage circuit, the negative input end of the operational amplifier is connected with a zero temperature coefficient band gap reference voltage end in the band gap reference voltage circuit through a first resistor, and the negative input end of the operational amplifier is connected with a ground end through a second resistor;
the band gap reference voltage circuit comprises a first NPN triode and a second NPN triode, bases of the first NPN triode and the second NPN triode are mutually connected, the ratio of the number of the triodes in the first NPN triode to the number of the triodes in the second NPN triode is n:1,n is a natural number larger than 1, the base of the second NPN triode is connected with the zero-temperature-coefficient band gap reference voltage end, an emitting electrode in the first NPN triode is connected with the positive temperature coefficient voltage end through a fourth resistor, an emitting electrode of the second NPN triode is connected with the positive temperature coefficient voltage end, and the positive temperature coefficient voltage end is connected with a grounding end through a fifth resistor;
a voltage V between the base and the emitter of the second NPN triode BE2 Has a negative temperature coefficient, the positive temperature coefficient voltage of the positive temperature coefficient voltage end is V ptat The zero temperature coefficient band gap reference voltage at the zero temperature coefficient band gap reference voltage end is V BG ，V BG ＝V BE2 +V ptat ，
Wherein K is Boltzmann's constant, T is a thermodynamic temperature, q is an amount of electron charge, n is n in said n:1, R 5 Is the resistance value of the fifth resistor, R 4 Is the resistance value of the fourth resistor, ic Is the collector current of the second NPN triode, is the saturation current of the second NPN triode, and V BE2 Having a negative temperature coefficient, V ptat With positive temperature coefficient, by setting R 4 And R 5 Obtaining a voltage V with zero temperature coefficient BG ；
The analog output voltage Vout of the analog output voltage terminal is determined by the following equation:
wherein R is 1 Is the resistance value of the first resistor, R 2 Is the resistance value of the second resistor, R 3 Is the resistance value of the third resistor.
2. The analog output integrated temperature sensor of claim 1, wherein the negative input terminal of the operational amplifier is connected to the analog output voltage terminal through a third resistor.
3. The analog output integrated temperature sensor of claim 1, wherein the operational amplifier is a CLASS-AB operational amplifier.
4. The analog-output integrated temperature sensor according to claim 1, wherein a collector of the first NPN transistor is connected to a drain and a gate of a first PMOS transistor and a gate of a second PMOS transistor, respectively, a source of the first PMOS transistor and a source of the second PMOS transistor are both connected to a power supply voltage terminal, and a drain of the second PMOS transistor is connected to a collector of the second NPN transistor.
5. The integrated analog output temperature sensor of claim 1, wherein the analog output voltage terminal is connected to ground through a load capacitor.
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